KR20150037261A - Film forming apparatus - Google Patents
Film forming apparatus Download PDFInfo
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- KR20150037261A KR20150037261A KR20130116727A KR20130116727A KR20150037261A KR 20150037261 A KR20150037261 A KR 20150037261A KR 20130116727 A KR20130116727 A KR 20130116727A KR 20130116727 A KR20130116727 A KR 20130116727A KR 20150037261 A KR20150037261 A KR 20150037261A
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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Abstract
The present application relates to a film forming apparatus, a film forming method or a multilayer film.
The present application discloses a film forming apparatus, a deposition method, or a multi-layer film which does not damage a film by physical contact or the like by forming the film protective layer in a process of continuously forming a film on the surface thereof while transferring the substrate such as a so- Can be provided.
Description
The present application relates to a film forming apparatus, a film forming method and a multilayer film.
There is known an apparatus called a so-called roll-to-roll apparatus, which forms a film on its surface in various manners while transferring the substrate by a roll system such as an unwinding roll, a guide roll and a winding roll.
For example, Patent Document 1 discloses a method of forming a multilayer film including a barrier layer and the like on the surface of a substrate through atomic layer deposition (ALD), also called atomic layer epitaxy (ALE) Discloses a turrol apparatus.
In such a conventional apparatus, a film is formed on the surface while the substrate is being conveyed by the guide roll, and the substrate on which the film is formed is wound by a winding roll or the like to be recovered. In such a process, the film formed on the surface of the substrate is inevitably brought into physical contact with the guide roll, the winding roll, and the like, and the physical properties of the film formed thereby may deteriorate.
The present application provides a film forming apparatus, a film forming method, and a multilayer film.
The present application is directed to a film-forming apparatus configured to form a film on a substrate to be transferred and to form a protective layer on the film, and the exemplary apparatus comprises at least one guide roll a first conveying means including a first roll; A processing region provided so as to form a film on a surface of the substrate transferred by the transfer means; And a winding roll for winding and recovering the substrate on which the film is formed, wherein the film forming apparatus comprises a protective film of a composite film including a protective layer formed on the carrier film so as to be peeled off from the carrier film, , And depositing the film on the film of the substrate on which the film is formed.
The present application also relates to a film forming method, and the above-described exemplary method can be carried out using the film forming apparatus.
The present application is also directed to a multi-layer film, wherein an exemplary multi-layer film comprises a substrate having a film formed thereon; And a composite film formed on the carrier film so as to be peeled from the carrier film, wherein the protective layer is adhered on the film of the substrate.
The present application discloses a film forming apparatus, a deposition method, or a multi-layer film which does not damage a film by physical contact or the like by forming the film protective layer in a process of continuously forming a film on the surface thereof while transferring the substrate such as a so- Can be provided.
1 to 8 show the structure of an exemplary film forming apparatus.
Figures 9 to 10 show the construction of an exemplary multilayer film.
The film forming apparatus of the present application may include a first transfer means, a processing region, a collection means, and an attachment system. The first transfer means includes at least one guide roll capable of transferring a substrate, and the processing region is provided so as to form a film by depositing a precursor gas on the surface of the substrate. Further, the adhering system is provided so as to adhere the protective film of the composite film including the protective layer formed on the carrier film so as to be peelable from the carrier film, onto the film of the substrate on which the film is formed.
The treatment region of the present application can be installed so that the film can be formed in an atomic layer manner.
The exemplary processing region may include at least two regions (hereinafter referred to as first and second regions, respectively), wherein one or more flow-limiting passages may be formed in each of the first region and the second region have. As used herein, the term flow restrictive passageway may refer to a passageway through which a substrate can move and precursor gases that may be present in each region are configured not to move through the passageway. An example of how this passage is formed will be described later. Each of the regions is provided so as to form a film by depositing a precursor gas on the surface of the substrate introduced through the flow-limiting passage.
At least one guide roll of the first conveying means exists in each of the first and second regions. The flow restricting passage forms a path for allowing the substrate to pass through the first and second regions at least once by the guide roll. The film forming apparatus may be provided with precursor gas supply means capable of supplying precursor gas to the first and second regions. For example, a first precursor gas is supplied to the first region to form a first monolayer on the substrate, and a second precursor gas is supplied to the second region to form a first precursor gas on the substrate or on the first monolayer A target film may be formed on the substrate through the process of forming the second monolayer. The first and second precursor gases may be of the same or different types, and if necessary, the first and second monolayer formation processes may be repeated a plurality of times in consideration of the desired thickness. Also, a third region in which a third monolayer is formed by the third precursor gas, as described below, or purging by an inert gas is performed, may also be included in the apparatus.
An exemplary adhering system includes a second conveying means including a feeding means capable of feeding a composite film and at least one guide roll installed to convey the composite film fed from the feeding means, The protective layer of the composite film can be adhered.
In addition, the exemplary recovering means can recover the substrate on which the coalesced film is formed and the composite film by winding the film on a take-up roll.
1 is a schematic view of an exemplary film forming apparatus.
1, the film-forming apparatus may include a
In the film forming apparatus, the input means 110 may serve to introduce the
The first transport means may comprise one or
In the film forming apparatus, the
The
One or more guide rolls of the first transporting means 120 and one or more guide rolls of the second transporting means 152 in the
In the film forming apparatus, the first conveying means 120 may further include another guide roll that can wind the composite of the combined substrate and the composite film and transfer it to the recovery means. That is, the substrate on which the protective layer is formed and joined may be transferred to the winding roll side by the guide roll of the first conveying means 120.
The winding means in the film forming apparatus can be recovered by winding the substrate on which the protective layer is formed by the
In the present application, Fig. 2 is a schematic view of a film forming apparatus provided with an energy applying means in addition to the adhering system.
As shown in FIG. 2, the
3 is a view showing another example of the film forming apparatus. The top view of FIG. 3 is a side view of the device, and the bottom view is a front view of the device.
3, the
The film forming apparatus may further include a third region. The third region may be, for example, a region into which the inert gas required in the purging process of the atomic layer deposition process is introduced, or a precursor gas which is different from or identical to that introduced in the first and / May be introduced. The third region may be connected to the first and / or second region by the flow-limiting passage when a third region exists, and the transfer means may transfer the substrate through the third region to the first and / (I.e., the order of " first region? Third region? Second region ").
4 illustrates an example in which the
FIG. 6 is a view showing an example in which two
The first transfer means, for example, the guide roll, of the film-forming apparatus may be provided so as to allow the substrate to pass through the first and second regions a plurality of times. When the third region is present, the transporting means, for example, the guide roll may be provided so as to allow the substrate to pass through the first and second regions a plurality of times while passing through the third region. 8 shows a state in which the substrate is transported by the transporting means (that is, the first region, the third region, the third region, and the third region) formed so as to pass through the
8, the conveying means includes a plurality of first guide rolls 120-1 and the like existing in the
In the above-described apparatus, the substrate passes through each region by the transfer means, and precursor gas is deposited in the region to form a monolayer or purged. The precursor gas may be supplied by a separate precursor gas supply means. The supply means may comprise a precursor gas source located inside or outside of each zone and may additionally include piping, pumps, valves, tanks and other necessary known means for supplying the precursor gas to the zone . Further, when another region such as a third region exists outside the first and second regions, for example, the precursor gas or the inert gas may be introduced into the region by the supplying means.
In the film forming apparatus, each region may be a chamber in which the pressure inside the chamber can be controlled through the exhaust gas by the exhaust means, the introduction pressure of the precursor gas or the inert gas, and the like. The chamber may be interfaced with other processing modules or equipment for controlling the progress of the process, and the like.
In the film-forming apparatus, the precursor gas in each region is moved to another region in order to prevent non-ALD reaction which may be caused by mixing precursor gas not adsorbed on the substrate existing in each region with gas in another region It is necessary to restrain it. Accordingly, each region is connected by the above-described flow-restricting passage or additionally the internal pressure can be adjusted. The method for constructing the flow restricting passage (hereinafter, simply referred to as the passage) is not particularly limited and a known method may be employed. For example, each passageway may be a slit having a size slightly larger than the thickness and width of the substrate passing through the passageway and having an added size. The passageway allows only a very small clearance when passing through the substrate and can be installed so that the substrate can pass through the passageway without scratching with each side of the passageway. For example, the clearance may be defined within a range between a few microns and a few millimeters. The passageway may also include a thinner tunnel through which the substrate may pass, and may include a wiper to further restrict the flow of gas through the passageway, if desired. In addition, the passageway may be formed by a series of elongated, narrow passageways extending and an inert gas injected into the third zone or the like may be injected directly into the passageway midway between the first and second zones to prevent movement and mixing of the precursor gas Can help.
There may be a pressure difference between each region to prevent mixing of the precursor gases. For example, if there is a
The present application also relates to a method of forming a film. Such a method can be carried out, for example, by using the film forming apparatus described above. For example, the film forming method may include forming a film on a surface of a substrate; And attaching a protective layer of the composite film to the surface of the film.
In the step of forming the film on the surface of the substrate, a precursor gas is supplied in the first region to form a first monolayer on the substrate while the substrate is transferred along the path formed by the flow-restricting passage by using the guide roll of the above- And forming a second monolayer on the substrate by supplying a precursor gas in the second region. The process may be repeated two or more times to obtain the desired thickness and, if necessary, one or more third regions may be included as described above to perform a purging process between the formation of the first and second monolayers, 1 and a third monolayer of a material different from that of the second monolayer.
The type of the substrate used in the above method is not particularly limited and can be, for example, glass, plastic film, metallic web or fibrous film. In addition, the kind of the film that can be formed on the substrate by the above method includes all kinds of films which are known or can be predicted to be formed by the film forming method, for example, a barrier layer, a conductive layer, A dielectric layer, an insulator layer, a light emitting layer, an electron transporting layer, an electron injecting layer, a hole injecting layer, or a hole transporting layer.
In addition, the kind of the precursor gas usable for forming such a film is not particularly limited, and any kind known to be applicable to the film formation and capable of forming each kind of film described above can be included.
Further, in the step of attaching the protective layer of the composite film to the surface of the film, the composite film is attached on the film of the substrate on which the film is formed in the above step by using the adhesion system of the film forming apparatus described above.
The composite film comprises a carrier film and a protective layer formed to be peelable from the carrier film. At this time, a coating layer, an adhesive layer, or an adhesive layer may be used as the protective layer. Here, an epoxy-based coating layer can be used as the coating layer.
In the present application, heat, ultraviolet rays or electron beams may be applied to the protective layer to facilitate the attachment. Further, the substrate and the composite film on which the treatment layer is formed may be laminated and then pressed to facilitate the attachment.
The present application also relates to multilayer films. Such a multilayer film may be, for example, a substrate having a film formed on its surface; And a protective layer formed on the carrier film so as to be peeled from the carrier film, wherein the protective layer can be adhered onto the film of the substrate.
In the multilayer film, the treatment layer may be a corona treatment layer, a plasma treatment layer, a primer treatment layer, a barrier layer, a conductive layer, a dielectric layer, an insulator layer, a light emitting layer, an electron transport layer, an electron injection layer, a hole injection layer or a hole transport layer.
The protective layer may be a coating layer, an adhesive layer or an adhesive layer, and may be an epoxy coating layer.
101: substrate
110: input means
120, 120-1, 120-2: guide roll
131: first region
132: second area
170: exhaust means
150: wall
160: flow-limiting passage
140: recovery means
701, 701-1, 701-2, 701-3, 7011, 7012:
150: Attachment system
151: protective layer supply roll
152: second conveying means
153: Energy-applying means
Claims (17)
Further comprising an attachment system for attaching a protective layer of a composite film comprising a protective layer formed on the carrier film so as to be peelable from the carrier film to a film of the substrate on which the film is formed.
Wherein the first conveying means includes another guide roll installed so as to convey the combined substrate and the composite film to the collecting means.
At least one guide roll of the conveying means is present in each of the first and second regions,
Wherein the flow restriction passage is provided so as to form a path for allowing the substrate to sequentially pass through the first and second regions.
And adhering a protective layer of the composite film to the surface of the film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20130116727A KR20150037261A (en) | 2013-09-30 | 2013-09-30 | Film forming apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20130116727A KR20150037261A (en) | 2013-09-30 | 2013-09-30 | Film forming apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20150037261A true KR20150037261A (en) | 2015-04-08 |
Family
ID=53033257
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR20130116727A KR20150037261A (en) | 2013-09-30 | 2013-09-30 | Film forming apparatus |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20150037261A (en) |
-
2013
- 2013-09-30 KR KR20130116727A patent/KR20150037261A/en not_active Application Discontinuation
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