KR20180018429A - Resin compositions - Google Patents

Abstract

Provided are: a resin composition which is suppressed in warpage, and excellent in strength and adhesiveness; and a resin sheet, a circuit board, and a semiconductor chip package using the same. The present invention relates to the resin composition comprising (A) an elastomer having a polycarbonate structure in a molecule, (b) an epoxy resin, (c) an inorganic filler, (d) a phenoxy resin, and (e) a carbodiimide compound.

Description

RESIN COMPOSITIONS [0001]

The present invention relates to a resin composition. The present invention also relates to a resin sheet, a circuit board, and a semiconductor chip package using the resin composition.

2. Description of the Related Art In recent years, demand for small-sized, high-performance electronic devices such as smart phones and tablet PCs is increasing, and accordingly, insulating materials for semiconductor packages (insulating layers) used in these small electronic devices are required to be further enhanced.

For example, an insulating layer for die sealing used in a fan-out type wafer level chip-size package (Wafer Level Package) has a problem in that it is difficult to prevent warpage, sufficient strength for peeling off a resin wafer from a fixed tape, Sufficient adhesion to the layer (for example, silicon nitride or polyimide) is required. In addition, the insulating layer used in the wiring board having the buried wiring layer is required to have a sufficient flexural strength, sufficient strength for peeling off the core substrate, and sufficient adhesion to copper.

Patent Document 1 discloses a thermosetting resin composition containing a specific linearly modified polyimide resin and a thermosetting resin as a low-elasticity thermosetting resin composition. However, from the viewpoint of compatibility with other resins, the insulating material having a low elastic modulus has a limited design of the resin composition and does not reach the required characteristics.

Patent Document 1: JP-A-2006-37083

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a resin composition which is suppressed in warpage, has excellent strength and adhesion, a resin sheet using the resin composition, a circuit board and a semiconductor chip package.

The present inventors have found that a resin composition containing (a) an elastomer having a polycarbonate structure in a molecule, (b) an epoxy resin, (c) an inorganic filler, (d) a phenoxy resin, and (e) a carbodiimide compound, The warpage is suppressed, the strength and the adhesion property are excellent, and thus the present invention has been accomplished.

That is, the present invention includes the following contents.

[1] A resin composition comprising (a) an elastomer having a polycarbonate structure in a molecule, (b) an epoxy resin, (c) an inorganic filler, (d) a phenoxy resin, and (e) a carbodiimide compound.

[2] The resin composition according to [1], wherein the content of the component (c) is 75% by mass to 95% by mass based on 100% by mass of the nonvolatile component of the resin composition.

[3] A resin composition as described in [1] or [2], wherein the content of the component (a) is 30% by mass to 85% by mass based on 100% by mass of the nonvolatile component of the resin composition excluding the component (c) Composition.

[4] The resin composition according to any one of [1] to [3], wherein the cured product obtained by thermosetting the resin composition at 180 ° C. for 1 hour has an elastic modulus at 23 ° C. of 8 Gpa or more.

[5] The positive resist composition according to [1], wherein the component (a) is a compound represented by the formula (1-a) and the compound represented by the formula (1-b).

The formula (1-a)

The formula (1-b)

Wherein R 1 represents a residue other than a hydroxyl group of the polycarbonate diol, R 2 represents a residue other than a carboxyl group or an acid anhydride group of a polybasic acid or an anhydride thereof, and R 3 represents a residue other than an isocyanate group of a diisocyanate compound.

[1] The resin composition according to any one of [1] to [4].

[6] The resin composition according to any one of [1] to [5], wherein the component (a) has a functional group capable of reacting with the component (b).

[7] The resin composition according to any one of [1] to [6], wherein the component (a) has a phenolic hydroxyl group.

[8] The resin composition according to any one of [1] to [7], further comprising (f) a curing agent, wherein the curing agent is at least one selected from phenolic curing agents.

[9] A resin composition according to any one of [1] to [8], which is a resin composition for an insulating layer of a semiconductor chip package.

[10] A resin sheet having a support and a resin composition layer comprising the resin composition according to any one of [1] to [9] formed on the support.

[11] A resin sheet according to [10], which is a resin sheet for an insulating layer of a semiconductor chip package.

[12] A circuit board comprising an insulating layer formed by a cured product of the resin composition according to any one of [1] to [9].

[13] A semiconductor chip package on which a semiconductor chip is mounted on a circuit board according to [12].

[14] A semiconductor chip package comprising a resin composition according to any one of [1] to [9], or a semiconductor chip sealed with a resin sheet according to [10].

INDUSTRIAL APPLICABILITY According to the present invention, it is possible to provide a resin composition in which a warpage is suppressed, a cured product (insulating layer) excellent in strength and adhesion is obtained; A resin sheet, a circuit board and a semiconductor chip package using the same can be provided.

Hereinafter, the resin composition, resin sheet, circuit board, and semiconductor chip package of the present invention will be described in detail.

[Resin composition]

The resin composition of the present invention comprises (a) an elastomer having a polycarbonate structure in a molecule, (b) an epoxy resin, (c) an inorganic filler, (d) a phenoxy resin, and (e) a carbodiimide compound. (F) a curing agent, (g) a curing accelerator, and (h) a flame retardant, if necessary. Hereinafter, each component contained in the resin composition will be described in detail.

< (a) An elastomer having a polycarbonate structure in a molecule >

The resin composition of the present invention comprises (a) an elastomer having a polycarbonate structure in the molecule. By including a flexible resin such as the component (a), it is possible to obtain an insulating layer having excellent insulation reliability, suppressing the occurrence of warpage, and having a low coefficient of linear thermal expansion.

In the present invention, the elastomer is preferably a resin having rubber elasticity, or a resin exhibiting rubber elasticity by polymerization or solidification. The rubber elasticity is preferably a resin exhibiting a modulus of elasticity of 1 GPa or less when a tensile test is carried out at a temperature of 25 DEG C and a humidity of 40% RH in accordance with Japanese Industrial Standard (JIS K761).

The elastomer of component (a) is preferably at least one resin selected from a resin having a glass transition temperature (Tg) of 25 DEG C or lower and a resin liquid at 25 DEG C from the viewpoint of suppressing warpage.

The glass transition temperature of the resin having a glass transition temperature (Tg) of 25 占 폚 or lower is preferably 20 占 폚 or lower, more preferably 15 占 폚 or lower. The lower limit of the glass transition temperature is not particularly limited, but it is usually -15 캜 or higher. The resin that is liquid at 25 占 폚 is preferably a liquid resin at 20 占 폚 or lower, and more preferably a resin that is liquid at 15 占 폚 or lower.

(1-a) &quot;) and a compound represented by the formula (1-b), which are represented by the formula (1-a) (Imide structure, hereinafter sometimes abbreviated as &quot; structure (1-b) &quot;).

The formula (1-a)

The formula (1-b)

Wherein R 1 represents a residue other than a hydroxyl group of the polycarbonate diol, R 2 represents a residue other than a carboxyl group or an acid anhydride group of a polybasic acid or an anhydride thereof, and R 3 represents a residue other than an isocyanate group of a diisocyanate compound.

In addition, the terminal of the above formula represents a bonding position, not a methyl group. The same is true for other formulas.

The number average molecular weight of the polycarbonate diol is preferably 500 to 5,000, more preferably 1,000 to 3,000 from the viewpoints of the flexibility of the cured product of the resin composition and the solvent solubility of the component (A). The hydroxyl group equivalent of the polycarbonate diol is preferably 250 to 1,250, and more preferably 500 to 1,000 from the viewpoint of the flexibility of the cured product of the resin composition and the chemical resistance.

Examples of the diisocyanate compound include aromatic diisocyanates such as toluene-2,4-diisocyanate, toluene-2,6-diisocyanate, xylylene diisocyanate and diphenylmethane diisocyanate; Aliphatic diisocyanates such as hexamethylene diisocyanate; And alicyclic diisocyanates such as isophorone diisocyanate. Of these, aromatic diisocyanates are preferable, and toluene-2,4-diisocyanate is more preferable.

Examples of the polybasic acid or its anhydride include pyromellitic acid, benzophenonetetracarboxylic acid, biphenyltetracarboxylic acid, naphthalenetetracarboxylic acid, 5- (2,5-dioxotetrahydrofuryl) -3- Methylcyclohexene-1,2-dicarboxylic acid, 3,3'-4,4'-diphenylsulfonetetracarboxylic acid and the like and their anhydrides, trimellitic acid, cyclohexanetricarboxylic acid (1, 2, 3, 4, 5-tetrabromo-3-furanyl) -naphthoic acid and their anhydrides, 1,3,3a, 4,5,9b-hexahydro- 2-C) furan-1,3-dione, and the like. Among them, a tetrabasic acid anhydride is preferable, a tetrabasic acid dianhydride is more preferable, and a benzophenonetetracarboxylic acid dianhydride is more preferable.

R1 is preferably a group represented by the formula (1-c):

(1-c)

[Wherein k + 1 R &lt; 4 &gt; s each independently represent an alkylene group having 1 to 20 carbon atoms which may have a substituent, and k represents an integer of 5 to 30.]

&Lt; / RTI &gt;

The alkylene group of R4 may be linear or branched. Examples of the substituent which the alkylene group of R4 may have include a halogen atom, a cycloalkyl group having 4 to 8 carbon atoms, and an aryl group having 6 to 14 carbon atoms. The alkylene group of R4 is preferably an indeterminate.

Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom.

Examples of the cycloalkyl group having 4 to 8 carbon atoms include a cyclopentyl group, a cyclohexyl group and a cycloheptyl group.

Examples of the aryl group having 6 to 14 carbon atoms include a phenyl group, a 1-naphthyl group, a 2-naphthyl group, a 1-anthryl group, a 2-anthryl group and a 9-anthryl group.

Each k + 1 R 4 is independently an alkylene group preferably having 1 to 20 carbon atoms, more preferably an alkylene group having 2 to 18 carbon atoms, and still more preferably an alkylene group having 3 to 16 carbon atoms. k is preferably an integer of 5 to 25, more preferably an integer of 5 to 20.

R2 preferably has the formula:

[In the formula, A is oxygen, _{sulfur, CO, SO, SO 2,} CH 2, CH (CH 3), C (CH 3) 2, C (CF 3) 2, or C (CCl _{3) 2} . In the above formula, the hydrogen atom bonded to the carbon atom may be substituted with a substituent selected from a halogen atom and an alkyl group having 1 to 8 carbon atoms.

Or a quadrivalent group represented by any one of the following groups.

Among the R &lt; 2 &gt; (quadrivalent group) represented by the above formula, a tetravalent group having an aromatic ring is preferable, a tetravalent group having two or more aromatic rings is more preferable,

[In the formula, A is oxygen, _{sulfur, CO, SO, SO 2,} CH 2, CH (CH 3), C (CH 3) 2, C (CF 3) 2, or C (CCl _{3) 2} . In the above formula, the hydrogen atom bonded to the carbon atom may be substituted with a substituent selected from a halogen atom and an alkyl group having 1 to 8 carbon atoms.

Is most preferable.

A is preferably CO.

The hydrogen atom bonded to the carbon atom in the above formula (i.e., the hydrogen atom bonded to the carbon atom in the quadrivalent group represented by R 2) may be substituted with a substituent selected from a halogen atom and an alkyl group having 1 to 8 carbon atoms. It is preferable that the hydrogen atom is not substituted.

Examples of the halogen atom include those described above.

The alkyl group may be linear or branched. Examples of the alkyl group having 1 to 8 carbon atoms include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert- butyl, pentyl, -Ethylpropyl group, hexyl group, isohexyl group, 1,1-dimethylbutyl group, 2,2-dimethylbutyl group, 3,3-dimethylbutyl group, 2-ethylbutyl group, heptyl group and octyl group .

R3 is preferably a group of the formula:

[In the above formula, the hydrogen atom bonded to the carbon atom may be substituted with a substituent selected from a halogen atom and an alkyl group having 1 to 8 carbon atoms.]

And a divalent group represented by any one of the following groups. In addition, the terminal of the above formula represents a bonding position, not a methyl group. For example, the last of the above formula represents a hexamethylene group rather than octane.

The hydrogen atom bonded to the carbon atom in the above formula (i.e., the hydrogen atom bonded to the carbon atom in the bivalent group R3) is a substituent selected from a halogen atom and an alkyl group having 1 to 8 carbon atoms (preferably having 1 to 8 carbon atoms More preferably an alkyl group having 1 to 6 carbon atoms, most preferably a methyl group).

Examples of the halogen atom and the alkyl group having 1 to 8 carbon atoms include those described above. Examples of the alkyl group having 1 to 6 carbon atoms include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl, -Ethylpropyl group, hexyl group, isohexyl group, 1,1-dimethylbutyl group, 2,2-dimethylbutyl group, 3,3-dimethylbutyl group and 2-ethylbutyl group.

Among the R &lt; 3 &gt; (divalent group) represented by the above formula, a divalent group having an aromatic ring or an alicyclic ring is preferable, and a divalent organic group having an alicyclic ring is more preferable. In the case of a divalent group having an aromatic ring,

[In the above formula, the hydrogen atom bonded to the carbon atom may be substituted with an alkyl group having 1 to 8 carbon atoms (preferably an alkyl group having 1 to 6 carbon atoms, more preferably a methyl group).]

, And a 4-methyl-1,3-phenylene group (that is, a residue other than an isocyanate group of the toluene-2,4-diisocyanate) is particularly preferable.

The component (a) preferably has a functional group capable of reacting with the component (b) described later.

In a preferred embodiment, the functional group capable of reacting with the component (b) is selected from the group consisting of a hydroxyl group (more preferably a phenolic hydroxyl group), a carboxyl group, an acid anhydride group, an amino group, an epoxy group, an isocyanate group and a urethane group At least one functional group selected. Among them, the functional group is preferably a hydroxyl group, an acid anhydride group, an epoxy group or an isocyanate group, and more preferably a hydroxyl group, an acid anhydride group or an epoxy group.

The number average molecular weight (Mn) is preferably 1,000 to 100,000, more preferably 5,000 to 50,000, still more preferably 7,500 to 30,000, still more preferably 10,000 to 15,000. Here, the number average molecular weight (Mn) of the resin is the number average molecular weight in terms of polystyrene measured by GPC (gel permeation chromatography).

The functional group equivalent in the case of having a functional group is preferably 100 to 10000, more preferably 200 to 5000. The functional group equivalent is the number of grams of resin containing one gram equivalent of functional group. For example, the epoxy equivalent weight can be measured according to JIS K7236. The hydroxyl equivalent can be calculated by dividing the molecular weight of KOH by the hydroxyl value measured in accordance with JIS K1557-1.

As a preferred embodiment of the component (a), a polycarbonate resin having a glass transition temperature of 25 캜 or lower is preferable, and a hydroxyl group-containing polycarbonate resin (more preferably a phenolic hydroxyl group-containing polycarbonate resin), a carboxyl group- At least one resin selected from the group consisting of a carbonate resin, an acid anhydride group-containing polycarbonate resin, an epoxy group-containing polycarbonate resin, an isocyanate group-containing polycarbonate resin and a urethane group-containing polycarbonate resin is preferable. Here, the "polycarbonate resin" refers to a resin containing a polycarbonate structure, and in these resins, the polycarbonate structure may be contained in the main chain or in the side chain.

The content of the component (a) in the resin composition is preferably 85% by mass or less, more preferably 80% by mass or less, more preferably 80% by mass or less based on 100% by mass of the nonvolatile component of the resin composition excluding the component (c) More preferably not more than 75% by mass, still more preferably not more than 73% by mass. The lower limit is preferably at least 30 mass%, more preferably at least 35 mass%, still more preferably at least 45 mass%, even more preferably at least 55 mass%.

< (b) Epoxy resin >

The resin composition comprises an epoxy resin. Examples of the epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol AF type epoxy resin, dicyclopentadiene type epoxy resin, trisphenol type epoxy resin, Butyl-catechol-type epoxy resin, naphthalene-type epoxy resin, naphthol-type epoxy resin, anthracene-type epoxy resin, glycidylamine-type epoxy resin, Alicyclic epoxy resins, glycidyl ester type epoxy resins, cresol novolak type epoxy resins, biphenyl type epoxy resins, linear aliphatic epoxy resins, epoxy resins having a butadiene structure, alicyclic epoxy resins, heterocyclic epoxy resins, Hexanediol type epoxy resin, naphthylene ether type epoxy resin, trimethylol type Epoxy resins, tetraphenyl ethane type epoxy resins, and the like. The epoxy resin may be used singly or in combination of two or more kinds.

The epoxy resin preferably contains an epoxy resin having two or more epoxy groups in one molecule. When the nonvolatile component of the epoxy resin is 100% by mass, it is preferable that at least 50% by mass or more of the epoxy resin is an epoxy resin having two or more epoxy groups in one molecule. Among them, epoxy resins having two or more epoxy groups in one molecule and having a liquid epoxy resin (hereinafter referred to as &quot; liquid epoxy resin &quot;) at a temperature of 20 캜 and three or more epoxy groups in one molecule, (Hereinafter referred to as &quot; solid epoxy resin &quot;). When a liquid epoxy resin and a solid epoxy resin are used in combination as the epoxy resin, a resin composition having excellent flexibility is obtained. Further, the fracture strength of the cured product of the resin composition is also improved.

Examples of the liquid epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol AF type epoxy resin, naphthalene type epoxy resin, glycidyl ester type epoxy resin having aromatic structure, glycidylamine type epoxy resin having aromatic structure A phenol novolak type epoxy resin, an alicyclic epoxy resin having an ester skeleton having an aromatic structure, a cyclohexanedimethanol type epoxy resin having an aromatic structure, and an epoxy resin having a butadiene structure having an aromatic structure are preferable, and bisphenol A Type epoxy resin, bisphenol F type epoxy resin, bisphenol AF type epoxy resin and naphthalene type epoxy resin are more preferable, and a bisphenol A type epoxy resin and bisphenol F type epoxy resin are more preferable. Specific examples of the liquid epoxy resin include "HP4032", "HP4032D", "HP4032SS" (naphthalene type epoxy resin), "828US", "jER828EL" (bisphenol A type epoxy resin) manufactured by Mitsubishi Kagaku Co., JER806 "," jER807 "(bisphenol F type epoxy resin)," jER152 "(phenol novolak type epoxy resin)," 630 "," 630LSD "(aminophenol type epoxy resin)," Shinerttetsu Sumikin Kagaku " ZX1059 "(a mixture of bisphenol A type epoxy resin and bisphenol F type epoxy resin)," EX-721 "(glycidyl ester type epoxy resin) manufactured by Nagase Chemtech Corp.," Celloxide 2021P " (Alicyclic epoxy resin having an ester skeleton), "ZX1658" and "ZX1658GS" (liquid 1,4-glycidyl cyclohexane) manufactured by Shinnitetsu Kagaku Co., Ltd. These may be used singly or in combination of two or more.

The content of the liquid epoxy resin in the resin composition is preferably not less than 1% by mass, more preferably not less than 2% by mass from the viewpoint of improving the compatibility of the component (a) when the nonvolatile component in the resin composition is 100% Mass% or more, and more preferably 2.5 mass% or more. The upper limit of the content of the epoxy resin is not particularly limited as long as the effects of the present invention are exhibited, but is preferably 15 mass% or less, more preferably 10 mass% or less, further preferably 5 mass% or less.

The epoxy equivalent of the liquid epoxy resin is preferably 50 to 5000, more preferably 50 to 3000, still more preferably 80 to 2000, still more preferably 110 to 1000. With this range, the crosslinked density of the cured product of the resin composition becomes sufficient, and when the cured product is used as the insulating layer, the insulating layer having a small surface roughness can be obtained. The epoxy equivalent of the liquid epoxy resin can be measured according to JIS K7236, and is the mass of the resin containing one equivalent of epoxy group.

The weight average molecular weight of the liquid epoxy resin is preferably 100 to 5000, more preferably 250 to 3000, and still more preferably 400 to 1500. Here, the weight average molecular weight of the liquid epoxy resin is a weight average molecular weight in terms of polystyrene measured by a gel permeation chromatography (GPC) method.

Examples of the solid epoxy resin include naphthalene type tetrafunctional epoxy resin, cresol novolak type epoxy resin, aromatic dicyclopentadiene type epoxy resin, trisphenol type epoxy resin, naphthol type epoxy resin, biphenyl type epoxy resin, naphthylene Epoxy type epoxy resins, ether type epoxy resins, anthracene type epoxy resins, bisphenol A type epoxy resins, bisphenol AF type epoxy resins and tetraphenyl ethane type epoxy resins are preferable, and naphthalene type tetrafunctional epoxy resins, naphthol type epoxy resins, , And naphthylene ether type epoxy resin are more preferable, and naphthalene type tetrafunctional epoxy resin and naphthylene ether type epoxy resin are more preferable. Specific examples of the solid epoxy resin include HP4032H (naphthalene type epoxy resin), HP-4700, HP-4710 (naphthalene type tetrafunctional epoxy resin), N-690 HP-7200H "," HP-7200H "," HP-7200HHH "(dicyclopentadiene)," N-695 "(cresol novolak type epoxy resin) EXA7311-G4 "," EXA7311-G4S "," HP6000 "(naphthylene ether type epoxy resin)," EPPN-502H "manufactured by Nippon Kayaku Co., NC3000H "," NC3000L "," NC3100 "(biphenyl-type epoxy resin), Shinnetsu Tetsu Sumikin Kagakusa Co., Ltd. (trisphenol type epoxy resin)," NC7000L "(naphthol novolak type epoxy resin) ESN475V "(naphthol type epoxy resin)," ESN485 "(naphthol novolak type epoxy resin) manufactured by Mitsubishi Chemical Corporation," YX4000H "and" YL6121 " YX8800 &quot; (anthracene epoxy resin), &quot; PG-100 &quot; manufactured by Osaka Gas Chemical Co., Ltd., and &quot; CG Quot; jER1010 &quot; (solid bisphenol A type epoxy resin), &quot; jER1031S &quot; (tetraphenyl ethane type epoxy resin), &quot; YL7800 &quot; (fluorene type epoxy resin) manufactured by Mitsubishi Kagaku Co., YX4000HK "(biquileneol type epoxy resin)," YX8800 "(anthracene type epoxy resin) manufactured by Mitsubishi Kagaku Co., Ltd.," PG-100 " CG-500 "manufactured by Mitsubishi Chemical Corporation," YL7800 "(fluorene type epoxy resin) manufactured by Mitsubishi Kagaku Co., Ltd., and" jER1031S "(tetraphenyl ethane type epoxy resin) manufactured by Mitsubishi Kagaku Co., These may be used alone or in combination of two or more.

The content of the solid epoxy resin in the resin composition is preferably 0.1% by mass or more, more preferably 0.2% by mass or more from the viewpoint of adjusting the viscosity of the resin composition when the nonvolatile component in the resin composition is 100% , More preferably not less than 0.3 mass%. The upper limit of the content of the epoxy resin is not particularly limited as long as the effects of the present invention are exhibited, but is preferably 10% by mass or less, more preferably 5% by mass or less, further preferably 1% by mass or less.

The epoxy equivalent of the solid epoxy resin is preferably 50 to 5000, more preferably 50 to 3000, still more preferably 80 to 2000, still more preferably 110 to 1000. By setting this range, the crosslinked density of the cured product becomes sufficient, and an insulating layer having a small surface roughness can be obtained. The epoxy equivalent of the solid epoxy resin can be measured according to JIS K7236, and is the mass of the resin containing one equivalent of epoxy group.

The weight average molecular weight of the solid epoxy resin is preferably 100 to 5000, more preferably 250 to 3000, and still more preferably 400 to 1500. Here, the weight average molecular weight of the solid epoxy resin is the weight average molecular weight in terms of polystyrene measured by a gel permeation chromatography (GPC) method.

It is preferable that the relationship B1 > B2 is satisfied from the viewpoint of adjusting the melt viscosity when the content of the liquid epoxy resin is B1 (mass%) and the content of the solid phase epoxy resin is B2 (mass%). The difference (B1-B2) between B1 and B2 is preferably 0.1 mass% or more, more preferably 0.2 mass% or more, further preferably 0.3 mass% or more, 0.5 mass% or more, or 1 mass% to be. The upper limit of the car (B1-B2) is not particularly limited, but usually 10 mass% or less and 5 mass% or less.

The ratio of the liquid epoxy resin to the solid epoxy resin (solid epoxy resin / liquid epoxy resin) is preferably in the range of 0.01 to 1 in mass ratio. By setting the ratio between the liquid epoxy resin and the solid epoxy resin within such a range, it is possible to obtain appropriate adhesiveness in the case of (i) use in the form of a resin sheet, (ii) sufficient flexibility is obtained when used in the form of a resin sheet , Handling property is improved, and (iii) a cured product having sufficient breaking strength can be obtained. From the viewpoint of the effects of i) to iii), the ratio of the liquid epoxy resin to the solid epoxy resin (solid epoxy resin / liquid epoxy resin) is more preferably in the range of 0.05 to 0.8, and more preferably in the range of 0.1 to 0.5 desirable.

<(c) inorganic filler>

The resin composition includes (c) an inorganic filler. The material of the inorganic filler is not particularly limited and may be, for example, silica, alumina, glass, cordierite, silicon oxide, barium sulfate, barium carbonate, talc, clay, mica powder, zinc oxide, hydrotalcite, Magnesium hydroxide, aluminum hydroxide, magnesium hydroxide, magnesium carbonate, magnesium oxide, boron nitride, aluminum nitride, manganese nitride, aluminum borate, strontium carbonate, strontium titanate, calcium titanate, magnesium titanate, bismuth titanate, titanium oxide, zirconium oxide, , Barium titanate zirconate, barium zirconate, calcium zirconate, zirconium phosphate, and zirconium tungstate phosphate. Of these, silica or alumina is suitable, and silica is particularly suitable. As the silica, spherical silica is preferable. The inorganic fillers may be used singly or in combination of two or more kinds.

The average particle diameter of the inorganic filler is preferably 5 占 퐉 or less, more preferably 2.5 占 퐉 or less, further preferably 2.2 占 퐉 or less, and still more preferably 2.2 占 퐉 or less, from the viewpoint of improving the circuit filling property and obtaining an insulating layer with a low surface roughness Or less. The lower limit of the average particle diameter is not particularly limited, but is preferably 0.01 占 퐉 or more, more preferably 0.05 占 퐉 or more, and even more preferably 0.1 占 퐉 or more. Examples of commercially available inorganic fillers having such an average particle diameter include YC100C, YA050C, YA050C-MJE, YA010C, and UFP-30 manufactured by Denki Kagaku Co., Quot; SO-C6 &quot;, &quot; SO-C4 &quot;, &quot; SO-C2 &quot;, &quot; NSS- , &Quot; SO-C1 &quot;, and the like.

The average particle diameter of the inorganic filler can be measured by a laser diffraction / scattering method based on the Mie scattering theory. Specifically, the particle size distribution of the inorganic filler can be measured with a laser diffraction scattering type particle size distribution measuring apparatus, and the average particle size can be measured with the intermediate diameter thereof. The measurement sample can be preferably those in which an inorganic filler is dispersed in water by ultrasonic waves. As the laser diffraction scattering type particle size distribution measuring apparatus, "LA-500" manufactured by Horiba Seisakusho Co., Ltd. and the like can be used.

From the viewpoint of improving moisture resistance and dispersibility, the inorganic filler is preferably selected from the group consisting of an amino silane coupling agent, an epoxy silane coupling agent, a mercaptosilane coupling agent, a silane coupling agent, an alkoxysilane compound, an organosilazane compound, It is preferable that the surface treatment agent is treated with at least one kind of surface treatment agent, Commercially available products of surface treatment agents include, for example, KBM403 (3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd., KBM803 (3-mercaptopropyltrimethoxysilane ), KBE903 (3-aminopropyltriethoxysilane) manufactured by Shinetsu Kagaku Kogyo Co., Ltd., KBM573 (N-phenyl-3-aminopropyltrimethoxysilane) manufactured by Shinetsu Kagakuko Co., KBM103 &quot; (phenyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd., KBM-4803 (manufactured by Shin-Etsu Chemical Industry Co., Ltd.) (long-chain epoxy type silane coupling agent ) And the like.

The degree of surface treatment by the surface treatment agent can be evaluated according to the amount of carbon per unit surface area of the inorganic filler. The amount of carbon per unit surface area of the inorganic filler is preferably at least 0.02 mg / m 2, more preferably at least 0.1 mg / m 2, and most preferably at least 0.2 mg / m 2 from the viewpoint of improving the dispersibility of the inorganic filler. On the other hand, from the viewpoint of preventing the melt viscosity of the resin varnish and the increase of the melt viscosity in the sheet form, it is preferably 1 mg / m 2 or less, more preferably 0.8 mg / m 2 or less and still more preferably 0.5 mg / m 2 or less .

The carbon content per unit surface area of the inorganic filler can be measured after the surface-treated inorganic filler is washed with a solvent (for example, methyl ethyl ketone (MEK)). Specifically, a sufficient amount of MEK as a solvent is added to the inorganic filler surface-treated with the surface-treating agent, and ultrasonically cleaned at 25 ° C for 5 minutes. After the supernatant is removed and the solid content is dried, the amount of carbon per unit surface area of the inorganic filler can be measured using a carbon analyzer. As the carbon analyzer, "EMIA-320V" manufactured by Horiba Seisakusho Co., Ltd. and the like can be used.

The content of the inorganic filler in the resin composition is preferably from 75% by mass to 95% by mass. Preferably 78% by mass or more, more preferably 80% by mass or more, furthermore preferably 83% by mass or more. The upper limit is preferably 90 mass% or less from the viewpoint of the mechanical strength of the insulating layer, in particular, from the viewpoint of stretching.

< (d) Phenoxy resin >

The resin composition of the present invention comprises a phenoxy resin as the component (d).

From the viewpoint of obtaining a good insulating layer having a mechanical strength, the weight average molecular weight of the phenoxy resin is preferably 10,000 or more, more preferably 15,000 or more, further preferably 20000 or more, even more preferably 25000 or 30000 or more . From the viewpoint of obtaining good compatibility, the upper limit of the weight average molecular weight of the thermoplastic resin is preferably 200,000 or less, more preferably 180,000 or less, still more preferably 160,000 or less, even more preferably 150,000 or less. The weight average molecular weight of the thermoplastic resin can be measured by, for example, gel permeation chromatography (GPC). Specifically, the weight average molecular weight (in terms of polystyrene) of the thermoplastic resin was measured using LC-9A / RID-6A manufactured by Shimadzu Corporation, Shodex K-800P / K- 804L / K-804L can be measured at a column temperature of 40 占 폚 using chloroform or the like as a mobile phase, and can be calculated using a calibration curve of standard polystyrene.

particularly in view of obtaining strength and adhesiveness in combination with (a) an elastomer having a polycarbonate structure in a molecule, (b) an epoxy resin, (c) an inorganic filler, and (e) a carbodiimide compound In view of obtaining the thermoplastic resin, it is preferable that the thermoplastic resin has at least one atom selected from the group consisting of an oxygen atom, a nitrogen atom and a sulfur atom, or a functional group containing a carbon-carbon double bond. Examples of such functional groups include a hydroxyl group, a carboxyl group, an acid anhydride group, an epoxy group, an amino group, a thiol group, an enol group, an enan group, a urea group, a cyanate group, an isocyanate group, a thioisocyanate group, a diimide group, And one or more groups selected from the group consisting of As the acid anhydride group, a carboxylic acid anhydride group is preferable. Suitable examples of the alkenyl group include a vinyl group, an allyl group and a styryl group. The glass transition temperature of the insulating layer obtained by using the thermoplastic resin having such a functional group tends to be high, and an insulating layer exhibiting good heat resistance can be realized. When the thermoplastic resin contains such a functional group, the functional group equivalent of the thermoplastic resin is preferably 100000 or less, more preferably 90,000 or less, 80000 or less, 70000 or less, 60000 or less, 50000 or less, 40000 or less, 30000 or less, 10000 or less, 8000 or less, 6000 or less, or 5000 or less. The lower limit of the equivalent of the functional group is not particularly limited, but may be usually 50 or more, 100 or more, and the like.

Examples of the phenoxy resin include bisphenol A skeleton, bisphenol F skeleton, bisphenol S skeleton, bisphenol acetophenone skeleton, novolac skeleton, biphenyl skeleton, fluorene skeleton, dicyclopentadiene skeleton, norbornene skeleton, , An anthracene skeleton, an adamantane skeleton, a terpene skeleton, and a trimethyl cyclohexane skeleton. The terminal of the phenoxy resin may be any functional group such as a phenolic hydroxyl group or an epoxy group. Specific examples of the phenoxy resin include "1256" and "4250" (both phenol resins containing a bisphenol A skeleton), "YX8100" (phenoxy resin containing a bisphenol S skeleton) and "YX6954" (Phenoxy resin containing an acetophenone skeleton), "FX280" and "FX293" manufactured by Shinnitetsu Sumikin Kagaku Co., Ltd., "YL7553", "YL6794" manufactured by Mitsubishi Kagaku Co., YL7213 &quot;, &quot; YL7290 &quot;, and &quot; YL7482 &quot;.

< (e) Carbodiimide compound >

The resin composition of the present invention includes a carbodiimide compound as the component (e).

The carbodiimide compound is a compound having at least one carbodiimide group (-N═C═N-) in one molecule, and the above (a) an elastomer having a polycarbonate structure in the molecule, (b) an epoxy resin, (c) an inorganic filler, and (d) a phenoxy resin, an insulating layer excellent in strength and adhesion can be obtained. As the carbodiimide compound, a compound having two or more carbodiimide groups in one molecule is preferable. The carbodiimide compound may be used alone, or two or more carbodiimide compounds may be used in combination.

In one embodiment, the carbodiimide compound contained in the resin composition of the present invention contains a structural unit represented by the following formula (2).

(2)

(In the above formula (2), X represents an alkylene group, a cycloalkylene group or an arylene group, which may have a substituent, and p represents an integer of 1 to 5. When a plurality of X exist, they are the same * May represent the number of bonds (bonds).

The number of carbon atoms of the alkylene group represented by X is preferably 1 to 20, more preferably 1 to 10, still more preferably 1 to 6, 1 to 4, or 1 to 3. The number of carbon atoms of the substituent group is not included in the number of carbon atoms in question. Suitable examples of the alkylene group include a methylene group, an ethylene group, a propylene group and a butylene group.

The number of carbon atoms of the cycloalkylene group represented by X is preferably 3 to 20, more preferably 3 to 12, still more preferably 3 to 6. The number of carbon atoms of the substituent group is not included in the number of carbon atoms in question. Suitable examples of the cycloalkylene group include a cyclopropylene group, a cyclobutylene group, a cyclopentylene group and a cyclohexylene group.

The arylene group represented by X is a group obtained by removing two hydrogen atoms from aromatic hydrocarbons on the aromatic ring. The number of carbon atoms of the arylene group is preferably 6 to 24, more preferably 6 to 18, still more preferably 6 to 14, still more preferably 6 to 10. The number of carbon atoms of the substituent group is not included in the number of carbon atoms in question. Suitable examples of the arylene group include a phenylene group, a naphthylene group and an anthracenylene group.

From the viewpoint of realizing an insulating layer having superior strength and adhesion in combination of (a) an elastomer having a polycarbonate structure in a molecule, (b) an epoxy resin, (c) an inorganic filler, and (d) a phenoxy resin, X is preferably an alkylene group or a cycloalkylene group, and these may have a substituent.

The alkylene group, cycloalkylene group or aryl group represented by X may have a substituent. The substituent is not particularly limited, and examples thereof include a halogen atom, an alkyl group, an alkoxy group, a cycloalkyl group, a cycloalkyloxy group, an aryl group, an aryloxy group, an acyl group and an acyloxy group. Examples of the halogen atom used as a substituent include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom. The alkyl group and alkoxy group used as the substituent may be either linear or branched and the number of carbon atoms thereof is preferably 1 to 20, more preferably 1 to 10, still more preferably 1 to 6, 1 to 4 , Or from 1 to 3. The number of carbon atoms of the cycloalkyl group and the cycloalkyloxy group used as a substituent is preferably 3 to 20, more preferably 3 to 12, still more preferably 3 to 6. The aryl group used as a substituent is a group excluding one hydrogen atom on an aromatic ring from an aromatic hydrocarbon and the number of carbon atoms thereof is preferably 6 to 24, more preferably 6 to 18, 14, &lt; / RTI &gt; The number of carbon atoms of the aryloxy group used as a substituent is preferably 6 to 24, more preferably 6 to 18, still more preferably 6 to 14, still more preferably 6 to 10. The acyl group used as a substituent means a group represented by the formula: -C (= O) -R1 (in the above formula, R1 represents an alkyl group or an aryl group). The alkyl group represented by R 1 may be either linear or branched, and the number of carbon atoms thereof is preferably 1 to 20, more preferably 1 to 10, still more preferably 1 to 6, 1 to 4, or 1 to 3. The number of carbon atoms of the aryl group represented by R 1 is preferably 6 to 24, more preferably 6 to 18, still more preferably 6 to 14, still more preferably 6 to 10. The acyloxy group used as a substituent means a group represented by the formula: -O-C (= O) -R1 (in the above formula, R1 has the same meaning as defined above). Among them, as the substituent, an alkyl group, an alkoxy group, and an acyloxy group are preferable, and an alkyl group is more preferable.

In the formula (2), p represents an integer of 1 to 5. From the viewpoint of realizing an insulating layer having superior strength and adhesion in combination of (a) an elastomer having a polycarbonate structure in a molecule, (b) an epoxy resin, (c) an inorganic filler, and (d) a phenoxy resin, p is preferably 1 to 4, more preferably 2 to 4, still more preferably 2 or 3.

In the formula (2), when a plurality of X exist, they may be the same or different. In a suitable embodiment, at least one X is an alkylene or cycloalkylene group, which may have a substituent.

In a preferred embodiment, the carbodiimide compound is preferably at least 50 mass%, more preferably at least 60 mass%, more preferably at least 50 mass%, more preferably at least 50 mass% Is at least 70% by mass, more preferably at least 80% by mass or at least 90% by mass, and contains the structural unit represented by the general formula (2). The carbodiimide compound may be substantially constituted by the structural unit represented by the formula (2), except for the terminal structure. The terminal structure of the carbodiimide compound is not particularly limited, and examples thereof include an alkyl group, a cycloalkyl group and an aryl group, and these may have a substituent. The alkyl group, cycloalkyl group or aryl group used as the terminal structure may be the same as the alkyl group, cycloalkyl group or aryl group described for the substituent which the group represented by X may have. The substituent which may be contained in the group used as the terminal structure may be the same as the substituent which the group represented by X may have.

The weight average molecular weight of the carbodiimide compound is preferably 500 or more, more preferably 600 or more, still more preferably 700 or more, and most preferably, More preferably 800 or more, particularly preferably 900 or more or 1000 or more. From the viewpoint of obtaining good compatibility, the upper limit of the weight average molecular weight of the carbodiimide compound is preferably 5000 or less, more preferably 4500 or less, further preferably 4000 or less, still more preferably 3500 or less, Particularly preferably 3000 or less. The weight average molecular weight of the carbodiimide compound can be measured by, for example, gel permeation chromatography (GPC) (in terms of polystyrene).

Further, the carbodiimide compound may originate from the process and may contain an isocyanate group (-N = C = O) in the molecule. The content of the isocyanate group (also referred to as &quot; NCO content &quot;) in the carbodiimide compound is preferably from 5 to 5, more preferably from 5 to 10, from the viewpoint of obtaining a resin composition exhibiting good storage stability, Or less, more preferably 4 mass% or less, further preferably 3 mass% or less, still more preferably 2 mass% or less, particularly preferably 1 mass% or less or 0.5 mass% or less.

Commercially available products of carbodiimide compounds may be used. Examples of commercially available carbodiimide compounds include Carbodite (registered trademark) V-02B, V-03, V-04K, V-07 and V-09 manufactured by Nissinbo Chemical Co., Starbucose (registered trademark) P, P400, and Haicardyl 510.

(a) an elastomer having a polycarbonate structure in a molecule, (b) an epoxy resin, (c) an inorganic filler, and (d) a phenoxy resin, The content of the carbodiimide compound in the resin composition is preferably not less than 1% by mass, more preferably not less than 2% by mass, further preferably not less than 3% by mass, not less than 4% by mass or not less than 5% by mass. The upper limit of the content of the carbodiimide compound is not particularly limited, but is preferably 30% by mass or less, more preferably 20% by mass or less, still more preferably 15% by mass or less.

< (f) Curing agent >

The resin composition may include (f) a curing agent. The curing agent is not particularly limited as long as it has a function of curing a resin such as the component (b), and examples thereof include a phenol type curing agent (including a naphthol type curing agent), an active ester type curing agent, a benzoxazine type curing agent, Ester-based curing agents and the like. The curing agent may be used singly or in combination of two or more kinds. The component (d) is preferably at least one selected from phenol-based curing agents, active ester-based curing agents and cyanate ester-based curing agents, and is preferably at least one selected from phenolic curing agents and active ester- More preferably, it is a curing agent.

As the phenol-based curing agent, a phenol-based curing agent having a novolak structure or a naphthol-based curing agent having a novolak structure is preferable from the viewpoints of heat resistance and water resistance. Further, from the viewpoint of adhesion with the wiring layer, a nitrogen-containing phenol-based curing agent is preferable, and a phenol-based curing agent containing a triazine skeleton is more preferable. Among them, a phenazine novolac curing agent containing a triazine skeleton is preferable from the viewpoint of highly satisfying heat resistance, water resistance, and adhesiveness to a wiring layer.

Specific examples of the phenol-based curing agent include "MEH-7700", "MEH-7810" and "MEH-7851" manufactured by Meiwa Chemical Industries, Ltd., "NHN", "CBN", "GPH" SN175 "," SN475V "," SN375 "," SN395 "," TD-2090 "and" LA-7052 "manufactured by DIC Corporation manufactured by Sumika Corporation," SN170 "," SN180 "," SN190 " KA-1135 "," LA-7054 "," LA-1356 " GDP-6115L &quot;, &quot; GDP-6115H &quot;, and &quot; OPE-1000 &quot; manufactured by Mitsubishi Gas Kagaku K.K.

From the viewpoint of obtaining an insulating layer having excellent adhesion with the wiring layer, an active ester-based curing agent is also preferable. The active ester-based curing agent is not particularly limited, but generally includes ester groups having high reactivity, such as esters of phenol esters, thiophenol esters, N-hydroxyamine esters, and heterocyclic hydroxy compounds, Are preferably used. It is preferable that the active ester-based curing agent is obtained by a condensation reaction of a carboxylic acid compound and / or a thiocarboxylic acid compound with a hydroxy compound and / or a thiol compound. Particularly, from the viewpoint of improving the heat resistance, active ester curing agents obtained from carboxylic acid compounds and hydroxy compounds are preferable, and active ester curing agents obtained from carboxylic acid compounds and phenol compounds and / or naphthol compounds are more preferable . Examples of the carboxylic acid compound include benzoic acid, acetic acid, succinic acid, maleic acid, itaconic acid, phthalic acid, isophthalic acid, terephthalic acid and pyromellic acid. Examples of the phenol compound or naphthol compound include hydroquinone, resorcin, bisphenol A, bisphenol F, bisphenol S, phenol phthaline, methylated bisphenol A, methylated bisphenol F, methylated bisphenol S, phenol, o- , p-cresol, catechol, alpha -naphthol, beta -naphthol, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, dihydroxybenzophenone, tri Hydroxybenzophenone, tetrahydroxybenzophenone, fluoroglucine, benzenetriol, dicyclopentadiene type diphenol compounds, phenol novolak, and the like. Here, the "dicyclopentadiene type diphenol compound" refers to a diphenol compound obtained by condensing two molecules of phenol in one dicyclopentadiene molecule.

Specifically, there can be mentioned an active ester compound containing a dicyclopentadiene type diphenol structure, an active ester compound containing a naphthalene structure, an active ester compound containing an acetylated product of phenol novolac, an activity including a benzoyl compound of phenol novolac An ester compound is preferable, and an active ester compound containing a naphthalene structure and an active ester compound containing a dicyclopentadiene type diphenol structure are more preferable. The "dicyclopentadiene-type diphenol structure" refers to a divalent structural unit consisting of phenylene-dicyclopentylene-phenylene.

EXB9451 "," EXB9460 "," EXB9460S "," HPC-8000-65T "," HPC-8000H-65TM ", and the like are available as commercial products of the active ester- EXB9416-70BK "(manufactured by DIC) as an active ester compound containing a naphthalene structure, and" DC808 "as an active ester compound containing an acetylated phenol novolak as an active ester compound having a naphthalene structure," EXB-8000L-65TM " YLH1026 &quot; (manufactured by Mitsubishi Kagaku Co., Ltd.) as an active ester compound containing a benzoylate of phenol novolac, &quot; DC808 &quot; (manufactured by Mitsubishi Kagaku Co., , YLH1026 (manufactured by Mitsubishi Kagaku Co., Ltd.), YLH1030 (manufactured by Mitsubishi Kagaku Co., Ltd.), and YLH1048 (manufactured by Mitsubishi Kagaku Co., Ltd.) as a benzoylate of phenol novolac as active ester- And the like.

Specific examples of the benzoxazine type curing agent include "HFB2006M" manufactured by Showa Kobunshi Co., Ltd., "P-d" manufactured by Shikoku Kasei Corporation, and "F-a".

Examples of the cyanate ester curing agent include bisphenol A dicyanate, polyphenol cyanate, oligo (3-methylene-1,5-phenylene cyanate), 4,4'-methylene bis (2,6- Bis (4-cyanate) phenylpropane, 1,1-bis (4-cyanurate), 4,4'-ethylidenediphenyl dicyanate, hexafluorobisphenol A dicyanate, 2,2- Bis (4-cyanate phenyl-1- (methyl ethylidene)) benzene, bis (4-cyanate-3,5-dimethylphenyl) methane, Phenyl) thioether, and bis (4-cyanate phenyl) ether, a polyfunctional cyanate resin derived from phenol novolak and cresol novolak, and a polyfunctional cyanate resin derived from these cyanate resins, Polymers, and the like. Specific examples of the cyanate ester-based curing agent include "PT30" and "PT60" (all phenol novolak-type multifunctional cyanate ester resins), "BA230", "BA230S75" (part of bisphenol A dicyanate Or all trimers are trimellated and prepolymers).

When the resin composition contains the component (d), the content of the curing agent in the resin composition is not particularly limited, but is preferably 10% by mass or less, more preferably 8% by mass or less, and further preferably 5% . The lower limit is not particularly limited, but is preferably 1% by mass or more.

<(g) Curing accelerator>

The resin composition may include (g) a curing accelerator. Examples of the curing accelerator include phosphorus hardening accelerator, amine hardening accelerator, imidazole hardening accelerator, guanidine hardening accelerator, metal hardening accelerator, and the like, and phosphorus hardening accelerator, amine hardening accelerator, imidazole hardening accelerator , A metal-based curing accelerator is preferable, and an amine-based curing accelerator, an imidazole-based curing accelerator, and a metal-based curing accelerator are more preferable. The curing accelerator may be used singly or in combination of two or more kinds.

Examples of the phosphorus hardening accelerator include triphenylphosphine, phosphonium borate compounds, tetraphenylphosphonium tetraphenylborate, n-butylphosphonium tetraphenylborate, tetrabutylphosphonium decanoate, (4-methylphenyl) triphenylphosphine Tetraphenylphosphonium thiocyanate, tetraphenylphosphonium thiocyanate, butyltriphenylphosphonium thiocyanate, and the like, and triphenylphosphine and tetrabutylphosphonium decanoate are preferable.

Examples of amine curing accelerators include trialkylamines such as triethylamine and tributylamine, 4-dimethylaminopyridine, benzyldimethylamine, 2,4,6-tris (dimethylaminomethyl) phenol, 1,8- Diazabicyclo (5,4,0) undecene, and 4-dimethylaminopyridine and 1,8-diazabicyclo (5,4,0) -undecene are preferable.

Examples of the imidazole-based curing accelerator include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, Methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole Benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl- 4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate (2'-methylimidazolyl- (1 ')] - ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimid (1 ')] - ethyl-s-triazine, 2,4-diamino-6- [2'-ethyl-4'-methylimidazolyl- , 2,4-diamino-6- [2'-methylimidazolyl- (1 ')] -ethyl-s-triazine, , 2-phenylimidazole isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,3- Dihydro-1H-pyrrolo [1,2-a] benzimidazole, 1-dodecyl-2-methyl-3-benzylimidazolium chloride, 2-methylimidazoline and 2-phenylimidazoline An imidazole compound and an adduct of an imidazole compound and an epoxy resin, and 2-ethyl-4-methylimidazole and 1-benzyl-2-phenylimidazole are preferable.

As the imidazole-based curing accelerator, a commercially available product may be used. Examples thereof include &quot; P200-H50 &quot; manufactured by Mitsubishi Chemical Corporation.

Examples of the guanidine curing accelerator include dicyandiamide, 1-methylguanidine, 1-ethylguanidine, 1-cyclohexylguanidine, 1-phenylguanidine, 1- (o-tolyl) guanidine, dimethylguanidine, diphenylguanidine, Tetramethylguanidine, pentamethylguanidine, 1,5,7-triazabicyclo [4.4.0] deca-5-ene, 7-methyl-1,5,7-triazabicyclo [4.4.0] deca 1-norbornylbiguanide, 1-n-octadecylbiguanide, 1,1-dimethylbiguanide, 1,1-dimethylbiguanide, 1,1- 1-cyclohexylbiguanide, 1-allylbiguanide, 1-phenylbiguanide, 1- (o-tolyl) bishianide, and the like can be mentioned, and dicyandiamide, 1 , 5,7-triazabicyclo [4.4.0] deca-5-ene are preferable.

Examples of the metal-based curing accelerator include organic metal complexes or organic metal salts of metals such as cobalt, copper, zinc, iron, nickel, manganese and tin. Specific examples of the organometallic complexes include organic cobalt complexes such as cobalt (II) acetylacetonate and cobalt (III) acetylacetonate, organic copper complexes such as copper (II) acetylacetonate, zinc An organic iron complex such as an organic zinc complex and iron (III) acetylacetonate, an organic nickel complex such as nickel (II) acetylacetonate, and an organic manganese complex such as manganese (II) acetylacetonate. Examples of the organic metal salt include zinc octylate, tin octylate, zinc naphthenate, cobalt naphthenate, stannous stearate, and zinc stearate.

When the resin composition contains the component (g), the content of the curing accelerator in the resin composition is not particularly limited, but 0.01% by mass or less of the component (b) and the curing agent (f) To 3% by mass.

<(h) Flame Retardant>

The resin composition may include (h) a flame retardant. Examples of the flame retardant include organic phosphorus flame retardants, organic nitrogen-containing phosphorus compounds, nitrogen compounds, silicon-based flame retardants and metal hydroxides. The flame retardant may be used alone, or two or more flame retardants may be used in combination.

As the flame retardant, a commercially available product may be used, for example, "HCA-HQ" manufactured by Sanko Co., Ltd., and the like.

When the resin composition contains a flame retardant, the content of the flame retardant is not particularly limited, but is preferably 0.5% by mass to 20% by mass, more preferably 0.5% by mass to 15% by mass, further preferably 0.5% by mass to 10% % By mass is more preferable.

< (i) Optional additives >

The resin composition may further contain other additives as required. Examples of such other additives include organic metal compounds such as organic copper compounds, organic zinc compounds and organic cobalt compounds, and binders, thickeners, defoaming agents, leveling agents , An adhesion-imparting agent, and a resin additive such as a coloring agent.

<Physical Properties of Resin Composition>

The cured product obtained by thermosetting the resin composition of the present invention at 180 占 폚 for 1 hour has an elastic modulus at 23 占 폚 of 8 GPa or more. The upper limit is not particularly limited, but may be, for example, 18 GPa or less, 15 GPa or less, 13 GPa or less, 11 GPa or less. By setting the modulus of elasticity to 8 GPa or more, it is possible to suppress the occurrence of warping of the cured product. The elastic modulus can be measured according to the method described in &quot; Measurement of elastic modulus and tensile strength at break &quot;

The cured product obtained by thermally curing the resin composition of the present invention at 180 ° C for 1 hour has a breaking point strength (MPa) at 23 ° C of 55 or more, preferably 60 or more, and more preferably 65 or more. The upper limit is not particularly limited, but may be, for example, 100 or less. The breaking point strength can be measured according to a method described in &quot; Measurement of elastic modulus and tensile breaking strength &quot;

The resin composition of the present invention can bring about a cured product (insulating layer) which is suppressed in warpage, excellent in strength and adhesion, and contains the component (b), so that the compatibility of the component (a) is good. Accordingly, the resin composition of the present invention is a resin composition for forming an insulating layer of a semiconductor chip package (a resin composition for an insulating layer of a semiconductor chip package), a resin composition for forming an insulating layer of a circuit board (including a printed wiring board) (Resin composition for an insulating layer of a circuit board), and a resin composition for forming an interlayer insulating layer on which a conductor layer is formed by plating (a resin for an interlayer insulating layer of a circuit board on which a conductor layer is formed by plating Composition) of the present invention.

It can also be suitably used as a resin composition (a resin composition for sealing a semiconductor chip) for sealing a semiconductor chip and a resin composition (a resin composition for forming a semiconductor chip wiring) for forming wiring in a semiconductor chip.

[Resin sheet]

The resin sheet of the present invention comprises a support and a resin composition layer bonded to the support, wherein the resin composition layer comprises the resin composition of the present invention.

The thickness of the resin composition layer is preferably not more than 200 mu m, more preferably not more than 150 mu m, further preferably not more than 100 mu m, not more than 80 mu m, not more than 60 mu m, not more than 50 mu m, or not more than 40 mu m . The lower limit of the thickness of the resin composition layer is not particularly limited, but may be usually 1 占 퐉 or more, 5 占 퐉 or more, 10 占 퐉 or more, or the like.

As the support, for example, a film made of a plastic material, a metal foil and a release paper can be mentioned, and a film or a metal foil made of a plastic material is preferable.

When a film made of a plastic material is used as the support, examples of the plastic material include polyethylene terephthalate (hereinafter may be abbreviated as "PET"), polyethylene naphthalate (hereinafter sometimes abbreviated as "PEN" (TAC), polyether sulfide (PES), poly (methyl methacrylate), poly (methyl methacrylate), poly Ether ketone, and polyimide. Of these, polyethylene terephthalate and polyethylene naphthalate are preferable, and inexpensive polyethylene terephthalate is particularly preferable.

When a metal foil is used as a support, examples of the metal foil include copper foil and aluminum foil, and copper foil is preferable. The copper foil may be a copper foil made of a single metal of copper or a foil made of an alloy of copper and another metal (for example, tin, chromium, silver, magnesium, nickel, zirconium, silicon, It is also good.

The support may be subjected to a mat treatment or a corona treatment on the surface to be bonded to the resin composition layer.

As the support, a support having a release layer having a release layer on the surface to be bonded to the resin composition layer may be used. Examples of the release agent used for the release layer of the release layer-adherend support include one or more types of release agents selected from the group consisting of an alkyd resin, a polyolefin resin, a urethane resin, and a silicone resin. SK-1, &quot; &quot; AL-5, &quot; and &quot; AL-7 &quot;, manufactured by Lin Tec Corporation, each of which is a PET film having a release layer composed mainly of an alkyd resin- "Loumirer T60" manufactured by Toray Industries, Inc., "Purex" manufactured by Teijin Co., Ltd., and "Unifil" manufactured by Uni-Cassa Corporation.

The thickness of the support is not particularly limited, but is preferably in the range of 5 탆 to 75 탆, more preferably in the range of 10 탆 to 60 탆. When a release layer-adhered support is used, it is preferable that the thickness of the entirety of the release layer-adhered support is in the above range.

The resin sheet can be produced, for example, by preparing a resin varnish obtained by dissolving a resin composition in an organic solvent, coating the resin varnish on a support using a die coater or the like, and further drying the resin varnish to form a resin composition layer .

Examples of the organic solvent include ketones such as acetone, methyl ethyl ketone (MEK) and cyclohexanone, acetic acid esters such as ethyl acetate, butyl acetate, cellosolve acetate, propylene glycol monomethyl ether acetate and carbitol acetate, And amide solvents such as dimethylformamide, dimethylacetamide (DMAc) and N-methylpyrrolidone, and the like, and the like. The organic solvent may be used singly or in combination of two or more kinds.

The drying may be carried out by a known method such as heating or hot air jetting. The drying conditions are not particularly limited, but the drying is carried out so that the content of the organic solvent in the resin composition layer is 10 mass% or less, preferably 5 mass% or less. When a resin varnish containing an organic solvent of 30% by mass to 60% by mass is used, it is dried at 50 ° C to 150 ° C for 3 minutes to 10 minutes, whereby the resin composition Layer can be formed.

In the resin sheet, a protective film corresponding to the support may be further laminated on the surface of the resin composition layer not bonded to the support (that is, the surface opposite to the support). The thickness of the protective film is not particularly limited, but is, for example, 1 m to 40 m. By laminating a protective film, it is possible to prevent adhesion and scratching of dust or the like on the surface of the resin composition layer. The resin sheet can be rolled and stored. When the resin sheet has a protective film, it can be used by peeling off the protective film.

Instead of the resin sheet of the present invention, a prepreg formed by impregnating a sheet-like fiber substrate with the resin composition of the present invention may be used.

The sheet-like fibrous base material used in the prepreg is not particularly limited, and those commonly used as prepreg substrates such as glass cloth, aramid nonwoven fabric, and liquid crystal polymer nonwoven fabric can be used. From the viewpoint of thinning, the thickness of the sheet-like fiber base material is preferably 900 mu m or less. The lower limit of the thickness of the sheet-like fibrous substrate is not particularly limited, but may be usually 1 占 퐉 or more.

The prepreg can be produced by a known method such as a hot melt method or a solvent method.

The thickness of the prepreg can be in the same range as that of the resin composition layer in the above resin sheet.

The resin sheet of the present invention can be suitably used for forming an insulating layer in the production of a semiconductor chip package (a resin sheet for insulation of a semiconductor chip package).

For example, the resin sheet of the present invention can be suitably used for forming an insulating layer of a circuit board (a resin sheet for an insulating layer of a circuit board), and an interlayer insulating layer on which a conductor layer is formed by plating (For the interlayer insulating layer of the circuit board forming the conductor layer by plating). Examples of packages using such a substrate include FC-CSP, MIS-BGA package, and ETS-BGA package.

The resin sheet of the present invention can be suitably used for sealing the semiconductor chip (resin sheet for sealing the semiconductor chip) or for forming the wiring in the semiconductor chip (resin sheet for forming the semiconductor chip wiring) -out-type WLP (wafer level package), fan-in type WLP, fan-out type PLP (panel level package), and fan-in type PLP. In addition, it can be suitably used for MUF (Molding Under Filling) material used after the semiconductor chip is connected to the substrate.

The resin sheet of the present invention can also be suitably used for forming an insulating layer of a circuit board such as a printed wiring board in a wide variety of applications requiring high insulation reliability.

[Circuit board]

The circuit board of the present invention includes an insulating layer formed by a cured product of the resin composition of the present invention.

A method of manufacturing a circuit board according to the present invention includes:

(1) a step of preparing a substrate having a wiring layer having a substrate and a wiring layer formed on at least one side of the substrate,

(2) a step of laminating the resin sheet of the present invention on a substrate with a wiring layer so that the wiring layer is embedded in the resin composition layer, and thermally curing the resin sheet to form an insulating layer;

(3) connecting the interconnection layers to each other. Further, the method of manufacturing a circuit board may include (4) a step of removing the substrate.

The step (3) is not particularly limited as long as the interconnection layers can be interlayer-connected. However, the step (3) may be a step of forming a via hole in the insulating layer and forming a wiring layer and a step of polishing or grinding the insulating layer and exposing the interconnection layer Process.

&Lt; Process (1) >

The step (1) is a step of preparing a substrate with a wiring layer having a substrate and a wiring layer formed on at least one side of the substrate. For example, the wiring layer-attached substrate has a first metal layer and a second metal layer, which are portions of the substrate, on both surfaces of the substrate, and a wiring layer on the surface opposite to the substrate-side surface of the second metal layer. Specifically, a dry film (photosensitive resist film) is laminated on a substrate, and exposed and developed using a photomask to form a pattern dry film. After the developed pattern dry film is used as a plating mask to form a wiring layer by electrolytic plating, the pattern dry film is peeled off. Further, the first metal layer and the second metal layer may not be provided.

Examples of the substrate include substrates such as a glass epoxy substrate, a metal substrate (such as stainless steel or cold rolled steel sheet (SPCC)), a polyester substrate, a polyimide substrate, a BT resin substrate, and a thermosetting polyphenylene ether substrate , And a metal layer such as a copper foil may be formed on the surface of the substrate. Further, a metal layer such as a first metal layer and a second metal layer (for example, ultra-thin copper foil with a carrier copper foil of Mitsui Kinzoku, trade name &quot; Micro Thin &quot;) that can be peeled off from the surface may be formed.

The dry film is not particularly limited as long as it is a photosensitive dry film made of a photoresist composition, and for example, a dry film such as novolak resin or acrylic resin can be used. A commercially available dry film may be used.

The conditions for laminating the base material and the dry film are the same as those for laminating the resin sheet of the step (2) described later to be embedded in the wiring layer, and the preferable range is also the same.

After the dry film is laminated on the substrate, exposure and development are performed under a predetermined condition using a photomask to form a desired pattern on the dry film.

The ratio of the line (circuit width) / space (width between circuits) of the wiring layer is not particularly limited, but is preferably 20/20 m or less (i.e., pitch is 40 m or less) and 0.5 / 0.5 m or more. The pitch does not have to be the same throughout the wiring layer. The minimum pitch of the wiring layers can be set to 40 m or less.

After the pattern of the dry film is formed, a wiring layer is formed and the dry film is peeled off. Here, the wiring layer can be formed by a plating method using a dry film having a desired pattern formed thereon as a plating mask.

The conductor material used for the wiring layer is not particularly limited. In a preferred embodiment, the wiring layer comprises at least one metal selected from the group consisting of gold, platinum, palladium, silver, copper, aluminum, cobalt, chromium, zinc, nickel, titanium, tungsten, iron, tin and indium. The wiring layer may be a single metal layer or an alloy layer. Examples of the alloy layer include alloys of two or more metals selected from the above-mentioned group (for example, nickel-chromium alloy, copper-nickel alloy and copper-titanium alloy) .

The thickness of the wiring layer depends on the design of the desired wiring board, but is preferably 3 mu m to 35 mu m. In the case where the step of polishing or grinding the insulating layer in step (3) and exposing the interconnection layer to connect the interconnection layers to each other is adopted, it is preferable that the thickness of the interconnection not to be connected to interlayer connection is different. The thickness of the wiring layer can be adjusted by repeating the above-described pattern formation. Among the respective wiring layers, the thickness of the wiring layer (conductive filler) having the largest thickness depends on the design of the desired wiring board, but is preferably 100 占 퐉 or less and 2 占 퐉 or more. Further, the wiring for interlayer connection may be convex.

After forming the wiring layer, the dry film is peeled off. The peeling of the dry film can be carried out, for example, by using an alkaline peeling solution such as a sodium hydroxide solution. If desired, an unnecessary wiring pattern may be removed by etching or the like to form a desired wiring pattern. The pitch of the wiring layers to be formed is as described above.

&Lt; Process (2) >

Step (2) is a step of laminating the resin sheet of the present invention on a substrate with a wiring layer so that the wiring layer is embedded in the resin composition layer, and thermally curing to form an insulating layer. Specifically, the wiring layer with the wiring layer with the wiring layer obtained in the above-mentioned step (1) is laminated so as to be embedded in the resin composition layer of the resin sheet, and the resin composition layer of the resin sheet is thermally cured to form the insulation layer.

The lamination of the wiring layer and the resin sheet can be performed by, for example, removing the protective film of the resin sheet and then hot-pressing the resin sheet from the support side to the wiring layer. Examples of the member for heating and pressing the resin sheet to the wiring layer (hereinafter, also referred to as a "hot pressing member") include a heated metal plate (SUS hard plate) or a metal roll (SUS roll). In addition, it is preferable to press the heat-press member in such a manner that an elastic material such as heat-resistant rubber is described so that the resin sheet can sufficiently follow the surface unevenness of the wiring layer without pressing the resin sheet directly.

The lamination of the wiring layer and the resin sheet may be carried out by vacuum lamination after removing the protective film of the resin sheet. In the vacuum laminating method, the heat pressing temperature is preferably in the range of 60 to 160 占 폚, the heat pressing pressure is preferably in the range of 0.098 MPa to 1.77 MPa, and the heat pressing time is preferably 20 seconds to 400 Lt; / RTI &gt; The lamination is preferably performed under a reduced pressure of 13 hPa or less.

After lamination, the laminated resin sheet may be subjected to a smoothing treatment by pressing under a normal pressure (at atmospheric pressure), for example, from a support side. The pressing condition of the smoothing treatment may be the same as the conditions of the hot pressing of the laminate. The lamination and the smoothing process may be continuously performed using the commercially available vacuum laminator.

The resin composition layer is laminated on the substrate with the wiring layer so that the wiring layer is buried, and then the resin composition layer is thermally cured to form the insulating layer. For example, the thermosetting conditions of the resin composition layer vary depending on the type of the resin composition and the like, but the curing temperature may be in the range of 120 캜 to 240 캜, and the curing time may be in the range of 5 minutes to 120 minutes. The resin composition layer may be preheated at a temperature lower than the curing temperature before thermosetting the resin composition layer.

The support of the resin sheet may be peeled off after the resin sheet is laminated on the substrate with the wiring layer and thermally cured, or the support may be peeled off before the resin sheet is laminated on the substrate with the wiring layer. Further, the support may be peeled off before the coarsening treatment step described later.

&Lt; Process (3) >

Step (3) is a step of interconnecting the wiring layers. The details are the steps of forming a via hole in the insulating layer and forming a conductor layer to interconnect the wiring layers. Or an insulating layer is polished or ground, and the interconnection layer is interlayer-connected by exposing the interconnection layer.

When a step of forming a via hole in the insulating layer and forming a conductor layer to connect the interconnection layers to each other is adopted, the formation of the via hole is not particularly limited, but laser irradiation, etching, and mechanical drilling can be mentioned. . This laser irradiation can be performed using any suitable laser processing machine using a carbon dioxide gas laser, a YAG laser, an excimer laser or the like as a light source. Specifically, laser irradiation is performed on the surface side of the support of the resin sheet, and a via hole is formed through the support and the insulating layer to expose the wiring layer.

The conditions of the laser irradiation are not particularly limited, and the laser irradiation can be carried out by any suitable process according to the commercial method according to the selected means.

The shape of the via-hole, that is, the shape of the outline of the opening as viewed in the extending direction is not particularly limited, but is generally circular (approximately circular).

The so-called desmear process may be performed after the via hole is formed, that is, the smear removing process in the via-hole. In the case where the conductor layer to be described later is formed by a plating process, for example, a wet desmear treatment may be performed on the via hole. When the conductor layer is formed by a sputtering process, for example, , A plasma treatment process, or the like may be performed. The desmearing step may also serve as a roughening treatment step.

Before the conductor layer is formed, the via hole and the insulating layer may be subjected to a roughening treatment. The harmonization process may employ a known procedure and conditions that are normally performed. Examples of the harmonic treatment of the dry process include plasma treatment and the like, and examples of the wet harmonic treatment include a swelling treatment with a swelling solution, a harmonic treatment with an oxidizing agent, and a neutralization treatment with a neutralizing solution in order.

After the via hole is formed, a conductor layer is formed. The conductor material constituting the conductor layer is not particularly limited, and the conductor layer can be formed by any suitable conventionally known method such as plating, sputtering, or vapor deposition, and is preferably formed by plating. As a suitable embodiment, a conductor layer having a desired wiring pattern can be formed by plating on the surface of an insulating layer by a conventionally known technique such as a semi-additive method or a pull additive method. When the support in the resin sheet is a metal foil, a conductor layer having a desired wiring pattern can be formed by a conventionally known technique such as a subtractive method. The conductor layer may have a single-layer structure or a multi-layer structure in which two or more single metal layers or alloy layers made of different metals or alloys are stacked.

The above description forms the plating seed layer by electroless plating on the surface of the insulating layer. Then, a mask pattern corresponding to a desired wiring pattern and exposing a part of the plating seed layer is formed on the formed plating seed layer. An electrolytic plating layer is formed on the exposed plating seed layer by electrolytic plating. At that time, along with the formation of the electrolytic plating layer, the via holes may be filled by electrolytic plating to form the field vias. After the electrolytic plating layer is formed, the mask pattern is removed. Thereafter, an unnecessary plating seed layer is removed by etching or the like to form a conductor layer having a desired wiring pattern. The dry film used for forming the mask pattern when forming the conductor layer is the same as the dry film.

The conductor layer may include not only a linear wiring but also an electrode pad (land) on which an external terminal can be mounted, for example. The conductor layer may be composed of only electrode pads.

Further, the conductor layer may be formed by forming an electroplated layer and field via after forming a plating seed layer, without using a mask pattern, and then performing patterning by etching.

When the step of polishing or grinding the insulating layer and exposing the wiring layer to connect the wiring layers to each other is adopted, the wiring layer can be exposed as the insulating layer polishing method or the insulating layer, and there is no particular limitation as long as the polishing or grinding surface is horizontal , A conventionally known polishing method or a grinding method can be applied, for example, a chemical mechanical polishing method using a chemical mechanical polishing apparatus, a mechanical polishing method such as a buff, and a planar grinding method using a grinding wheel. A step of performing a smear removal step and a roughening treatment may be performed or a conductor layer may be formed in the same manner as the step of forming a via hole in an insulating layer and forming a conductor layer to connect interconnection layers to each other. It is not necessary to expose all the wiring layers, and a part of the wiring layers may be exposed.

&Lt; Process (4) >

A method of manufacturing a circuit board is a step of removing the substrate to form the circuit board of the present invention. The method of removing the substrate is not particularly limited. In a preferred embodiment, the substrate is peeled from the circuit board at the interface between the first and second metal layers, and the second metal layer is etched away with, for example, a copper chloride aqueous solution. If necessary, the substrate may be peeled while the conductor layer is protected with a protective film.

[Semiconductor Chip Package]

A first form of the semiconductor chip package of the present invention is a semiconductor chip package on which the semiconductor chip is mounted on the circuit board of the present invention. The semiconductor chip package can be manufactured by bonding the semiconductor chip to the circuit board of the present invention.

As long as the terminal electrode of the semiconductor chip is conductively connected to the circuit wiring of the circuit board, the bonding conditions are not particularly limited, and known conditions used in the flip chip mounting of the semiconductor chip may be used. Further, an insulating adhesive may be described between the semiconductor chip and the circuit board to bond them.

One suitable embodiment compresses a semiconductor chip onto a circuit board. As the compression conditions, for example, the compression temperature may be in the range of 120 ° C. to 240 ° C., and the compression time may be in the range of 1 second to 60 seconds.

In another suitable embodiment, the semiconductor chip is bonded to the circuit board by reflowing. The reflow condition may be, for example, in the range of 120 占 폚 to 300 占 폚.

It is also possible to obtain a semiconductor chip package by, for example, filling the semiconductor chip with a mold underfill material after bonding the semiconductor chip to the circuit board. The filling with the mold underfill material can be carried out by a known method. The resin composition or resin sheet of the present invention can also be used as a mold underfill material.

A second form of the semiconductor chip package of the present invention is a semiconductor chip package (Fan-out type WLP). A method of manufacturing a semiconductor chip package,

(A) a step of laminating a temporary film on a substrate,

(B) a step of temporarily fixing the semiconductor chip on the fixed film,

(C) a step of laminating the resin composition layer of the resin sheet of the present invention on a semiconductor chip, or applying the resin composition of the present invention onto a semiconductor chip and thermally curing the resin composition layer to form a sealing layer,

(D) peeling the base material and the temporary fixing film from the semiconductor chip,

(E) a step of forming a rewiring layer (insulating layer) on the surface of the base material and the temporary fixing film of the semiconductor chip,

(F) a step of forming a conductor layer (re-wiring layer) on the rewiring layer (insulating layer), and

(G) forming a solder resist layer on the conductor layer. In addition, a method for manufacturing a semiconductor chip package may include (H) dicing a plurality of semiconductor chip packages into individual semiconductor chip packages and separating them.

&Lt; Process (A) >

Step (A) is a step of laminating a temporary film on a substrate. The lamination conditions of the substrate and the temporary film are the same as the lamination conditions of the wiring layer and the resin sheet in the step (2) in the method for producing a circuit board, and the preferable range is also the same.

The material used for the substrate is not particularly limited. As the substrate, a silicon wafer; Glass wafers; A glass substrate; Metal substrates such as copper, titanium, stainless steel, and cold rolled steel sheets (SPCC); A substrate (for example, FR-4 substrate) obtained by impregnating glass fiber with an epoxy resin or the like and thermally curing the substrate; And a substrate made of a bismaleimide triazine resin (BT resin).

The fixed film can be peeled off from the semiconductor chip in the step (D) to be described later, and the material is not particularly limited as far as the semiconductor chip can be temporarily fixed. A commercially available product can be used as the temporary fixing film. Commercially available products include River alpha manufactured by Nitto Denko Corporation.

&Lt; Process (B) >

The step (B) is a step of temporarily fixing the semiconductor chip on the fixed film. The temporary fixing of the semiconductor chip can be carried out by using a known device such as a flip chip bonder or a die bonder. The layout and arrangement number of the arrangement of the semiconductor chips can be appropriately set according to the shape, the size, the number of the semiconductor packages to be produced, and the like of the temporary films. For example, .

&Lt; Process (C) >

The step (C) is a step of laminating the resin composition layer of the resin sheet of the present invention on a semiconductor chip, or applying the resin composition of the present invention onto a semiconductor chip, and thermally curing to form a sealing layer. In the step (C), it is preferable that the resin composition layer of the resin sheet of the present invention is laminated on a semiconductor chip and thermally cured to form a sealing layer.

The lamination of the semiconductor chip and the resin sheet can be performed by removing the protective film of the resin sheet, for example, followed by hot-pressing the resin sheet to the semiconductor chip on the support side. Examples of the member for heating and pressing the resin sheet to the semiconductor chip (hereinafter also referred to as &quot; hot pressing member &quot;) include a heated metal plate (SUS hard plate) or a metal roll (SUS roll). It is also preferable to press the heat-press member through an elastic material such as heat-resistant rubber so that the resin sheet can sufficiently follow the surface unevenness of the semiconductor chip, instead of directly pressing the heat-press member to the resin sheet.

The lamination of the semiconductor chip and the resin sheet may be carried out by vacuum lamination after removing the protective film of the resin sheet. The lamination conditions in the vacuum lamination method are the same as the lamination conditions of the wiring layer and the resin sheet in the step (2) in the method for producing a circuit board, and the preferable range is also the same.

The support of the resin sheet may be peeled off after the resin sheet is laminated on the semiconductor chip and thermally cured, or the support may be peeled off before the resin sheet is laminated on the semiconductor chip.

The application conditions of the resin composition are the same as the application conditions in forming the resin composition layer in the resin sheet of the present invention, and the preferable range is also the same.

&Lt; Process (D) >

The step (D) is a step of peeling the base material and the temporary film from the semiconductor chip. The method of peeling can be appropriately changed depending on the material of the temporary film. For example, a method of peeling the temporary fixing film by heating, foaming (or expanding), and a method of irradiating ultraviolet rays from the substrate side, And then peeling off.

In the method of peeling the temporary fixing film by heating, foaming (or expanding), the heating condition is usually from 100 캜 to 250 캜 for 1 second to 90 seconds or 5 minutes to 15 minutes. In addition, in the method of irradiating ultraviolet rays from the substrate side and detaching the adhesive force of the temporary fixing film to peel off, the irradiation amount of ultraviolet rays is usually 10 mJ / cm 2 to 1000 mJ / cm 2.

&Lt; Process (E) >

The step (E) is a step of forming a rewiring layer (insulating layer) on the substrate of the semiconductor chip and the surface on which the temporary fixing film is peeled off.

The material for forming the rewiring film forming layer (insulating layer) is not particularly limited as long as it has insulation property at the time of forming the rewiring layer (insulating layer), and from the viewpoint of easiness of manufacturing the semiconductor chip package, a photosensitive resin or a thermosetting resin is preferable Do. As the thermosetting resin, a resin composition having the same composition as the resin composition for forming the resin sheet of the present invention may be used.

After the rewiring formation layer (insulating layer) is formed, a via hole may be formed in the rewiring formation layer (insulation layer) for interlayer connection of the semiconductor chip and a conductor layer described later.

In forming the via hole, if the material forming the rewiring layer (insulating layer) is a photosensitive resin, the active energy ray is first irradiated to the surface of the rewiring layer (insulating layer) through the mask pattern, Lt; / RTI &gt;

Examples of the active energy ray include ultraviolet rays, visible rays, electron rays and X-rays, and ultraviolet rays are particularly preferred. The irradiation amount of the ultraviolet ray and the irradiation time can be appropriately changed depending on the photosensitive resin. Examples of the exposure method include a contact exposure method in which the mask pattern is exposed to the rewiring layer (insulation layer) in close contact with the substrate, and a noncontact exposure method in which the mask pattern is exposed to light using a parallel light beam without contacting the rewiring layer May be used.

Subsequently, the redistribution film forming layer (insulating layer) is developed and the unexposed portions are removed to form via holes. The phenomenon is suitable for wet phenomenon and dry phenomenon. A known developing solution may be used for the developing solution used in the wet phenomenon.

Examples of the development method include a dip method, a paddle method, a spray method, a brushing method, and a scraping method, and from the viewpoint of resolution, a paddle method is suitable.

When the material forming the rewiring film forming layer (insulating layer) is a thermosetting resin, the formation of via holes is not particularly limited, but laser irradiation, etching, mechanical drilling and the like can be mentioned. The laser irradiation may be performed using any suitable laser processing machine using a carbon dioxide gas laser, a UV-YAG laser, an excimer laser, or the like as a light source.

The shape of the via-hole, that is, the shape of the outline of the opening when viewed in the extending direction is not particularly limited, but is generally circular (approximately circular). The diameter of the top of the via-hole (the diameter of the opening on the surface of the rewiring layer (insulating layer)) is preferably 50 占 퐉 or less. The lower limit is not particularly limited, but is preferably 10 mu m or more.

&Lt; Process (F) >

Step (F) is a step of forming a conductor layer (re-wiring layer) on the rewiring layer (insulating layer). The method of forming the conductor layer on the rewiring film forming layer (insulating layer) is the same as the method of forming the conductor layer after the via hole is formed in the insulating layer of the step (3) in the method of producing a circuit board, Do. The steps (E) and (F) may be repeatedly performed to build up (build up) the conductor layers (re-wiring layers) and the rewiring layer (insulating layers) alternately.

&Lt; Process (G) >

Step (G) is a step of forming a solder resist layer on the conductor layer.

The material for forming the solder resist layer is not particularly limited as long as it has insulation property at the time of forming the solder resist layer, and a photosensitive resin or a thermosetting resin is preferable from the viewpoint of ease of production of the semiconductor chip package. As the thermosetting resin, a resin composition having the same composition as the resin composition for forming the resin sheet of the present invention may be used.

In the step (G), bumping processing for forming bumps may be carried out if necessary. The bumping process can be performed by a known method such as solder ball, solder plating, and the like. Further, the formation of the via-hole in the bumping process can be carried out in the same manner as in the step (E).

&Lt; Process (H) >

The manufacturing method of the semiconductor chip package may include the step (H) in addition to the steps (A) to (G). Step (H) is a step of dicing a plurality of semiconductor chip packages into individual semiconductor chip packages and forming them into pieces.

The third form of the semiconductor chip package of the present invention is a semiconductor chip package comprising a rewiring layer (insulating layer) in a semiconductor chip package (Fan-out type WLP) and a solder resist layer in a semiconductor chip package to be.

[Semiconductor device]

Examples of the semiconductor device to be mounted on the semiconductor chip package of the present invention include electrical products (such as a computer, a mobile phone, a smart phone, a tablet device, a wafer device, a digital camera, a medical device, (For example, a motorcycle, an automobile, a tank, a ship, an aircraft, etc.), and the like.

Example

Hereinafter, the present invention will be described concretely with reference to Examples, but the present invention is not limited to these Examples. In the following description, &quot; part &quot; and &quot;% &quot; mean &quot; part by mass &quot; and &quot;% by mass &quot;, respectively, unless otherwise specified.

[Synthesis Example 1]

&Lt; Preparation of elastomer A >

368.41 g of ethyldiglycol acetate as a solvent and 368.41 g of Solvesso 150 (aromatic solvent, manufactured by Exxon Mobil Corporation) were charged into a flask equipped with a stirrer, a thermometer and a condenser, and 100.1 g of the diphenylmethane diisocyanate (0.2 mol) of polycarbonate diol (number average molecular weight: about 2000, hydroxyl group equivalent: 1000, nonvolatile content: 100%, "C-2015N" manufactured by Kuraray Co., Ltd.) The reaction was carried out. Subsequently, 195.9 g (0.2 mole) of nonylphenol novolak resin (hydroxyl equivalent 229.4 g / eq, average 4.27 functionality, average calculated molecular weight 979.5 g / mole) and 41.0 g (0.1 mole) of ethylene glycol bisanhydrotrimellitate were injected The temperature was raised to 150 캜 over 2 hours, and the reaction was carried out for 12 hours. Disappearance confirmation of the NCO peak at 2250 cm &lt; -1 &gt; from FT-IR was performed. The reaction was regarded as the end point of the reaction by confirming the disappearance of the NCO peak. The reaction was cooled to room temperature and then filtered through a 100-mesh filter cloth to obtain a resin having a polycarbonate structure (nonvolatile content of 50 mass%). The number average molecular weight was 6100.

(Preparation of cured product for evaluation)

("R5715ES" manufactured by Panasonic Corporation, thickness: 0.7 mm, thickness: 0.5 mm) was applied to the untreated surface of a releasing agent-treated PET film ("501010" 255 mm square) were overlapped and the sides were fixed with a polyimide adhesive tape (width 10 mm) (hereinafter, &quot; fixed PET film &quot;).

A PET film (&quot; Lumirror R80 &quot; manufactured by Toray Industries, Inc.) having a thickness of 38 탆 and a softening point of 130 占 퐉 was prepared by dissolving a resin varnish prepared in Examples and Comparative Examples in an alkyd resin releasing agent (AL- (Hereinafter, referred to as &quot; mold release PET &quot;) having a thickness of 40 탆, and dried at 80 캜 to 120 캜 (average 100 캜) for 10 minutes to obtain an adhesive film. Each of the adhesive films (thickness: 40 mu m, 200 mm square) was laminated by using a batch type vacuum pressure laminator (2 stage buildup laminator, CVP700 manufactured by Nikko Materials Co., Ltd.) And then laminated at the center to obtain a resin sheet with a support. The lamination treatment was carried out by reducing the pressure for 30 seconds to bring the air pressure to 13 hPa or less, followed by compression at 100 DEG C and a pressure of 0.74 MPa for 30 seconds.

Subsequently, the resultant was placed in an oven at 100 ° C. for 30 minutes, then transferred to an oven at 175 ° C. at 175 ° C., and thermally cured for 30 minutes. Thereafter, the substrate was taken out under a room temperature atmosphere, the releasing PET was peeled off from the resin sheet with the support, and then put into an oven at 180 deg. C, followed by thermal curing under a curing condition for 60 minutes.

After the thermosetting, the polyimide adhesive tape was peeled off, the cured product was separated from the glass cloth substrate epoxy resin double-sided copper-clad laminate, and a PET film ("501010" manufactured by Lintec Corporation) was also peeled off to obtain a sheet-like cured product. The obtained cured product is referred to as &quot; cured product for evaluation &quot;.

&Lt; Measurement of elastic modulus and tensile breaking strength &

The cured product for evaluation was cut into dumbbell-shaped squares to obtain test pieces. The test piece was subjected to tensile strength measurement using a tensile tester &quot; RTC-1250A &quot; manufactured by ORIENTECH, and the elastic modulus and tensile strength at 23 DEG C were obtained. The measurement was carried out in accordance with JIS K7127. This operation is carried out three times, and the average value is shown in the table.

<Strength Evaluation>

A forming tape side of a temporary release film (Libera Alpha No.31950E, Thermal release tape, manufactured by Nitto Denko Corporation) was attached to a wafer by a roll laminator on an 8-inch silicon wafer, and then a silicon chip (DIE size 9x6mm, height 150um) were arranged at equal intervals.

A PET film (&quot; Lumirror R80 &quot; manufactured by Toray Industries, Inc.) having a thickness of 38 탆 and a softening point of 130 占 퐉 was prepared by dissolving a resin varnish prepared in Examples and Comparative Examples with an alkyd resin releasing agent ("AL- (Hereinafter referred to as &quot; mold releasing PET &quot;) having a thickness of 200 mu m after drying, and dried at 80 DEG C to 120 DEG C (average 100 DEG C) for 10 minutes to obtain an adhesive film. The obtained adhesive film was laminated on the silicon chip side of the wafer with the silicon chip using a batch type vacuum laminator (2 stage build-up laminator, CVP700, manufactured by Nikko Materials Co., Ltd.), and the silicon chip was sealed. The silicon wafer was heated in an oven at 150 DEG C for 1 hour, and then the silicon wafer was heated on a hot plate at 200 DEG C, and a silicon wafer and riba alpha were peeled from the forming tape surface, Was peeled off by hand to obtain a resin wafer in which the silicon chip was embedded in the resin. &Quot; C &quot; indicates that the resin is missing or cracked during the above process, and &quot; C &quot;

&Lt; Evaluation of adhesion &

A wafer on which silicon nitride was deposited in an amount of 1000Å on an 8-inch silicon wafer was prepared, and the resin varnish produced in Examples and Comparative Examples was subjected to release treatment with a PET film (TORAY Co., Ltd., produced by Lintec Co., (Thickness of 38 mu m, softening point 130 DEG C, hereinafter referred to as &quot; release PET &quot;, manufactured by Nippon Kayaku Co., Ltd.) with a die coater so that the thickness of the dried water- (Average 100 DEG C) for 10 minutes to obtain an adhesive film. The resulting adhesive film was laminated on the wafer using a batch type vacuum pressure laminator (2-stage build-up laminator, CVP700, manufactured by Nikko Materials Co., Ltd.). After thermosetting in an oven at 180 DEG C for 1 hour, a resin composition layer was cross-cut (100 mils) on a checkerboard of 1 mm x 1 mm according to &quot; JIS K5400-8.5 / Humidity 100% / 100 hours), a tape fill test was conducted to measure the number of chambers in which the resin was peeled off. 0 &quot;, &quot; &quot;, &quot; DELTA &quot;, and &quot; x &quot;, respectively.

&Lt; Evaluation of flexure &

A PET film (&quot; Lumirror R80 &quot; manufactured by Toray Industries, Inc.) having a thickness of 38 탆 and a softening point of 130 占 퐉 was prepared by dissolving a resin varnish prepared in Examples and Comparative Examples with an alkyd resin releasing agent ("AL- ° C, hereinafter referred to as &quot; release PET &quot;) with a die coater such that the thickness of the dried water-based composition layer after drying was 300 탆, and dried at 80 캜 to 120 캜 (average 100 캜) for 10 minutes to obtain an adhesive film. The resulting adhesive film was laminated on a 12-inch silicon wafer (thickness 775 μm) using a batch type vacuum pressure laminator (2 stage build-up laminator manufactured by Nikko Materials Co., Ltd.) A resin-attached wafer was produced. The wafer with resin was placed on the flat surface with the resin side up, and the amount of warpage was measured. When the deflection of the portion having the greatest deflection is less than 2 mm, the mark is marked.

[Example 1]

3 parts of a bisphenol A type epoxy resin ("828EL" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent of about 186), 10 parts of an elastomer A, 10 parts of phenoxy resin ("YX7553BH30" manufactured by Mitsubishi Chemical Corporation, (1: 1 solution of cyclohexanone: methyl ethyl ketone (MEK)), 17 parts of dicyclopentadiene type epoxy resin (HP-7200 manufactured by DIC Corporation, epoxy equivalent 258), 3 parts of carbodiimide compound , 4 parts of a toluene solution of a nonvolatile component (equivalent weight: 200, carbodiimide equivalent: 50% by mass), and 4 parts of an aminosilane coupling agent (KBM573, manufactured by Shin-Etsu Chemical Co., , 115 parts of spherical silica A (average particle diameter 1.7 탆, specific surface area (m 2 / g) 2.7 袖 m), 15 parts of polyphenylene ether oligomer (OPE-1000 manufactured by Mitsubishi Gas Chemical Company, toluene solution of about 52% (Phenolic hydroxyl group equivalent: 435 g / eq), 9.6 parts of a flame retardant ("HCA-HQ" manufactured by Sanko Company, 10- (2,5-dihydroxype ) -10-hydro-9-oxa-10-phosphaphenanthrene-10-oxide having an average particle size of 2 탆), a curing accelerator ("2P4MZ-5M" manufactured by Shikoku Kasei Co., Phenylimidazole, MEK solution having a solid content of 5% by mass) were mixed and 100 parts of cyclohexanone was uniformly dispersed with a high-speed rotary mixer and filtered through a cartridge filter ("SHP050" manufactured by ROKITECHNO) to prepare a resin varnish Respectively.

[Example 2]

, 3 parts of a bisphenol A type epoxy resin ("828EL" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent of about 186), 10 parts of an elastomer A, 10 parts of phenoxy resin ("YX6954BH30" manufactured by Mitsubishi Chemical Corporation, (1: 1 solution of cyclohexanone: methyl ethyl ketone (MEK)), 17 parts of dicyclopentadiene type epoxy resin (HP-7200 manufactured by DIC Corporation, epoxy equivalent 258), 3 parts of carbodiimide compound , 4 parts of a toluene solution of a nonvolatile component (equivalent weight: 200, carbodiimide equivalent: 50% by mass), and 4 parts of an aminosilane coupling agent (KBM573, manufactured by Shin-Etsu Chemical Co., 115 parts of spherical silica A (average particle diameter 1.7 탆, specific surface area (m 2 / g) 2.7 袖 m), phenol novolac type curing agent containing triazine skeleton ("LA-7054" % Of MEK solution), 3.3 parts of a naphthol-based curing agent ("SN-485" manufactured by Shinnitetsu Sumikin Kagaku Co., Ltd., hydroxyl equivalent: 2 6 parts of a flame retardant (HCA-HQ, 10- (2,5-dihydroxyphenyl) -10-hydro-9-oxa- (2P4MZ-5M manufactured by Shikoku Chemicals, Inc., 1-benzyl-2-phenylimidazole, 5 parts by mass of a solid content of 5% by mass MEK Solution), and 100 parts of cyclohexanone was uniformly dispersed with a high-speed rotary mixer and filtered through a cartridge filter ("SHP050" manufactured by ROKITECHNO Co., Ltd.) to prepare a resin varnish.

[Example 3]

, 3 parts of a bisphenol A type epoxy resin ("828EL" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent of about 186), 10 parts of an elastomer A, 10 parts of phenoxy resin ("YX6954BH30" manufactured by Mitsubishi Chemical Corporation, (1: 1 solution of cyclohexanone: methyl ethyl ketone (MEK)), 3 parts of a dicyclopentadiene type epoxy resin ("HP-7200" manufactured by DIC Corporation, epoxy equivalent 258), a carbodiimide compound , 4 parts of a toluene solution of a nonvolatile component (equivalent weight: 200, carbodiimide equivalent: 50% by mass), and 4 parts of an aminosilane coupling agent (KBM573, manufactured by Shin-Etsu Chemical Co., 115 parts of spherical silica A (average particle diameter 1.7 탆, specific surface area (m 2 / g) 2.7 袖 m), phenol novolac type curing agent containing triazine skeleton ("LA-7054" (MEK solution in% by weight), 5 parts of flame retardant ("HCA-HQ", 10- (2,5-dihydroxyphenyl) -10-hydro- 1.5 parts by weight of a curing accelerator (&quot; 2P4MZ-5M &quot;, manufactured by Shikoku Kasei Corporation, 1-benzyl-2-phenylimidazole, 5 parts by mass of a solid content of MEK solution ), And 100 parts of cyclohexanone was uniformly dispersed with a high-speed rotary mixer and filtered through a cartridge filter ("SHP050" manufactured by ROKITECHNO Co., Ltd.) to prepare a resin varnish.

[Example 4]

3 parts of a bisphenol A type epoxy resin ("828EL" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent of about 186), 10 parts of an elastomer A, 10 parts of a dicyclopentadiene type epoxy resin ("HP-7200" ), 5 parts of bisphenol F type phenoxy resin ("FX-316" manufactured by Shinnitetsu Sumikin Kagaku KK), 5 parts of polyphenylene ether oligomer ("OPE-1000" manufactured by Mitsubishi Gas Chemical Co., 9.6 parts of a toluene solution of about 52%, phenolic hydroxyl equivalent: 435 g / eq), 10 parts of a carbodiimide compound (V-07 manufactured by Nissinbo Chemical Co., Ltd., carbodiimide equivalent 200, , 115 parts of spherical silica A (average particle diameter 1.7 탆, specific surface area (m 2 / g) 2.7 袖 m) surface-treated with an aminosilane coupling agent (KBM573 manufactured by Shin-Etsu Chemical Co., HCA-HQ &quot; manufactured by Sanko Company, 10- (2,5-dihydroxyphenyl) -10-hydro-9-oxa-10-phosphaphenanthrene- 3 parts of a curing accelerator ("2P4MZ-5M" manufactured by Shikoku Chemicals, Inc., 1-benzyl-2-phenylimidazole, MEK solution of a solid content of 5 mass%) were mixed, 100 parts of hexanone was uniformly dispersed with a high-speed rotary mixer and filtered through a cartridge filter (&quot; SHP050 &quot; manufactured by ROKITECHNO) to prepare a resin varnish.

[Example 5]

3 parts of a bisphenol A type epoxy resin ("828EL" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent of about 186), 5 parts of an elastomer A, 5 parts of a phenoxy resin having a flexible structure ("YX7180BH40" manufactured by Mitsubishi Chemical Corporation, 25 parts of a cyclohexanone type epoxy resin (a 1: 1 solution of cyclohexanone: MEK in mass%), 3 parts of a dicyclopentadiene type epoxy resin (HP-7200 manufactured by DIC Corporation, epoxy equivalent 258) and a carbodiimide compound , 4 parts of a toluene solution of a nonvolatile component (equivalent to 200 carbodiimide equivalents, manufactured by Nippon Kayaku Co., Ltd.), 4 parts of a spherical silica surface-treated with an amino silane coupling agent ("KBM573" 120 parts of a phenol novolak type curing agent ("LA-7054", manufactured by DIC Corporation) having a hydroxyl group equivalent of about 125 and a solid content of 60% MEK solution), 8.3 parts of a flame retardant ("HCA-HQ", 10- (2,5-dihydroxyphenyl) -10-hydro- (2P4MZ-5M, 1-benzyl-2-phenylimidazole, solid content 5% by mass, manufactured by Shikoku Kasei Co., , And 100 parts of cyclohexanone were uniformly dispersed with a high-speed rotary mixer and filtered through a cartridge filter ("SHP050" manufactured by ROKITECHNO Co., Ltd.) to prepare a resin varnish.

[Comparative Example 1]

3 parts of a bisphenol A type epoxy resin ("828EL" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent of about 186), 15 parts of an elastomer A, 15 parts of a dicyclopentadiene type epoxy resin ("HP-7200" ), 4 parts of a carbodiimide compound ("V-07" manufactured by Nissinbo Chemical Co., Ltd., a carbodiimide equivalent weight of 200, and a toluene solution of a nonvolatile component of 50% by weight), 4 parts of an amino silane coupling agent 115 parts of spherical silica A (average particle diameter 1.7 탆, specific surface area (m 2 / g) 2.7 袖 m) surface-treated with a polyphenylene ether oligomer ("OPE- 9.6 parts of a flame retardant ("HCA-HQ" manufactured by Sanko Co., Ltd., 10- (2,5-dihydroxyphenyl) -10-hydroxystearic acid -9-oxa-10-phosphaphenanthrene-10-oxide, average particle diameter 2 占 퐉), 1.5 parts of a curing accelerator ("2P4M, manufactured by Shikoku Kasei Co., 3 parts of 1-benzyl-2-phenylimidazole and 5 parts by mass of a solid content of MEK solution) were mixed and 100 parts of cyclohexanone was uniformly dispersed with a high-speed rotary mixer, and the mixture was transferred to a cartridge filter ("SHP050 &Quot;) to prepare a resin varnish.

[Comparative Example 2]

, 3 parts of a bisphenol A type epoxy resin ("828EL" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent of about 186), 3 parts of a dicyclopentadiene type epoxy resin (HP-7200 manufactured by DIC Corporation, epoxy equivalent 258) 15 parts of F phenoxy resin ("FX-316" manufactured by Shinnitetsu Sumikin Kagaku Co., Ltd.), 15 parts of phenol novolak type curing agent containing triazine skeleton ("LA-7054" , 4 parts of a carbodiimide compound ("V-07" manufactured by Nissinbo Chemical Co., Ltd., a carbodiimide equivalent weight of 200, and a toluene solution of a non-volatile component of 50 mass%), 8 parts of an aminosilane 115 parts of spherical silica A (average particle diameter 1.7 탆, specific surface area (m 2 / g) 2.7 袖 m) surface-treated with a coupling agent (KBM573 manufactured by Shin-Etsu Chemical Co., , 10- (2,5-dihydroxyphenyl) -10-hydro-9-oxa-10-phosphaphenanthrene-10-oxide, average particle diameter 2 탆) And 3 parts of a toluene solution ("2P4MZ-5M" manufactured by Shikoku Kasei Corporation, 1-benzyl-2-phenylimidazole, MEK solution having a solid content of 5 mass%) were mixed and 100 parts of cyclohexanone was uniformly dispersed And filtered through a cartridge filter (&quot; SHP050 &quot; manufactured by ROKITECHNO) to produce a resin varnish.

[Comparative Example 3]

3 parts of a bisphenol A type epoxy resin ("828EL" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent of about 186), 10 parts of an elastomer A, 10 parts of phenoxy resin ("YX7553BH30" manufactured by Mitsubishi Chemical Corporation, (1: 1 solution of cyclohexanone: methyl ethyl ketone (MEK)), 3 parts of dicyclopentadiene type epoxy resin (HP-7200 manufactured by DIC Corporation, epoxy equivalent 258) , 115 parts of spherical silica A (average particle diameter 1.7 탆, specific surface area (m 2 / g) 2.7 袖 m) surface-treated with a polyphenylene ether oligomer (manufactured by Mitsubishi Gas Chemical Co., 9.6 parts of a flame retardant ("HCA-HQ" manufactured by Sanko Co., Ltd., 10- (2,5-dihydroxyphenyl) -10 -Hydro-9-oxa-10-phosphaphenanthrene-10-oxide, average particle size 2 탆), 1.5 parts of a curing accelerator (2P4MZ-5M manufactured by Shikoku Kasei Co., , 1-benzyl-2-phenylimidazole and an MEK solution having a solid content of 5% by mass) were mixed and 100 parts of cyclohexanone was uniformly dispersed with a high-speed rotary mixer. The mixture was then filtered through a cartridge filter ("SHP050" manufactured by ROKITECHNO Co., Ltd.) Followed by filtration to prepare a resin varnish.

[Production Example 1]

<Fabrication of fan-out type resin sheet for WLP>

The resin varnish described in Example 1 was coated on a polyethylene terephthalate film (having a thickness of 38 mu m) with a die coater so that the thickness of the resin composition layer after drying was 200 mu m and dried at 80 to 120 DEG C (average 100 DEG C) for 10 minutes To obtain a resin sheet.

When the sealing layer of the fan-out type WLP was fabricated using the above resin sheet, it was found that it had sufficient performance as the fan-out type WLP.

[Production Example 1]

&Lt; Fabrication of Resin Sheet for Interlayer Insulation >

The resin varnish described in Example 1 was coated on a polyethylene terephthalate film (having a thickness of 38 mu m) with a die coater so that the thickness of the resin composition layer after drying was 200 mu m and dried at 80 to 120 DEG C (average 100 DEG C) for 10 minutes To obtain a resin sheet.

When the interlayer insulating layer of the circuit board was produced using the resin sheet, it was found that the circuit board of the present invention had sufficient performance.

Claims (14)

(a) an elastomer having a polycarbonate structure in a molecule, (b) an epoxy resin, (c) an inorganic filler, (d) a phenoxy resin, and (e) a carbodiimide compound. The resin composition according to claim 1, wherein the content of the component (c) is 75% by mass to 95% by mass, based on 100% by mass of the nonvolatile component of the resin composition. The resin composition according to any one of claims 1 to 3, wherein the content of the component (a) is 30% by mass to 85% by mass based on 100% by mass of the nonvolatile component of the resin composition excluding the component (c). 4. The resin composition according to any one of claims 1 to 3, wherein the cured product obtained by thermally curing the resin composition at 180 DEG C for 1 hour has an elastic modulus at 23 DEG C of 8 GPa or more. The resin composition according to any one of claims 1 to 4, wherein the component (a) is a resin having a structure represented by the formula (1-a) and a structure represented by the formula (1-b).
The formula (1-a)

The formula (1-b)

In the above formulas,
R 1 represents a residue other than the hydroxyl group of the polycarbonate diol, R 2 represents a residue other than a carboxyl group or an acid anhydride group of a polybasic acid or an anhydride thereof, and R 3 represents a residue other than an isocyanate group of the diisocyanate compound. The resin composition according to any one of claims 1 to 5, wherein the component (a) has a functional group capable of reacting with the component (b). The resin composition according to any one of claims 1 to 6, wherein the component (a) has a phenolic hydroxyl group. The resin composition according to any one of claims 1 to 7, further comprising (f) a curing agent, wherein the curing agent is at least one selected from phenolic curing agents. The resin composition according to any one of claims 1 to 8, which is a resin composition for a semiconductor chip package insulating layer. A resin sheet having a support and a resin composition layer comprising the resin composition according to any one of claims 1 to 9 formed on the support. The resin sheet according to claim 10, which is a resin sheet for an insulating layer of a semiconductor chip package. A circuit board comprising an insulating layer formed by a cured product of the resin composition according to any one of claims 1 to 9. A semiconductor chip package on which a semiconductor chip is mounted on the circuit board according to claim 12. A semiconductor chip package comprising the resin composition according to any one of claims 1 to 9, or the semiconductor chip sealed with the resin sheet according to claim 10.