KR20180000976A - 발광 다이오드 패키지 - Google Patents
발광 다이오드 패키지 Download PDFInfo
- Publication number
- KR20180000976A KR20180000976A KR1020160079400A KR20160079400A KR20180000976A KR 20180000976 A KR20180000976 A KR 20180000976A KR 1020160079400 A KR1020160079400 A KR 1020160079400A KR 20160079400 A KR20160079400 A KR 20160079400A KR 20180000976 A KR20180000976 A KR 20180000976A
- Authority
- KR
- South Korea
- Prior art keywords
- housing
- region
- light emitting
- emitting diode
- reflective surface
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 26
- 239000008393 encapsulating agent Substances 0.000 claims description 8
- 238000005192 partition Methods 0.000 description 18
- 230000001965 increasing effect Effects 0.000 description 16
- 239000003566 sealing material Substances 0.000 description 8
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- -1 (Al Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020160079400A KR20180000976A (ko) | 2016-06-24 | 2016-06-24 | 발광 다이오드 패키지 |
CN201710363240.1A CN107546310B (zh) | 2016-06-24 | 2017-05-22 | 发光二极管封装件 |
CN201810698176.7A CN108511580A (zh) | 2016-06-24 | 2017-05-22 | 发光二极管封装件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020160079400A KR20180000976A (ko) | 2016-06-24 | 2016-06-24 | 발광 다이오드 패키지 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20180000976A true KR20180000976A (ko) | 2018-01-04 |
Family
ID=60966735
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020160079400A KR20180000976A (ko) | 2016-06-24 | 2016-06-24 | 발광 다이오드 패키지 |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR20180000976A (zh) |
CN (2) | CN107546310B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111463334A (zh) * | 2020-04-16 | 2020-07-28 | 中国科学院半导体研究所 | 一种陶瓷基板及其封装方法 |
CN114512591A (zh) * | 2021-12-31 | 2022-05-17 | 佛山市国星光电股份有限公司 | 支架及led器件 |
CN114520284A (zh) * | 2021-12-31 | 2022-05-20 | 佛山市国星光电股份有限公司 | 框架及发光器件 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10041686A1 (de) * | 2000-08-24 | 2002-03-14 | Osram Opto Semiconductors Gmbh | Bauelement mit einer Vielzahl von Lumineszenzdiodenchips |
US7652301B2 (en) * | 2007-08-16 | 2010-01-26 | Philips Lumileds Lighting Company, Llc | Optical element coupled to low profile side emitting LED |
CN201549507U (zh) * | 2009-07-28 | 2010-08-11 | 浙江迈勒斯照明有限公司 | 一种多芯片集成封装的led |
KR101298406B1 (ko) * | 2010-05-17 | 2013-08-20 | 엘지이노텍 주식회사 | 발광소자 |
TWI557951B (zh) * | 2010-06-01 | 2016-11-11 | Lg伊諾特股份有限公司 | 發光元件封裝 |
KR101693642B1 (ko) * | 2010-12-21 | 2017-01-17 | 삼성전자 주식회사 | 발광소자 패키지 제조방법 |
CN202049997U (zh) * | 2011-05-20 | 2011-11-23 | 安徽中智光源科技有限公司 | 用于表面贴装led支架及led光源 |
CN103187485A (zh) * | 2011-12-27 | 2013-07-03 | 展晶科技(深圳)有限公司 | 发光二极管的制造方法 |
KR20140029617A (ko) * | 2012-08-29 | 2014-03-11 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
CN103887397A (zh) * | 2012-12-22 | 2014-06-25 | 展晶科技(深圳)有限公司 | 发光二极管 |
KR101831249B1 (ko) * | 2015-10-14 | 2018-02-23 | 엘지이노텍 주식회사 | 발광소자 패키지 및 조명 장치 |
CN205881937U (zh) * | 2016-06-24 | 2017-01-11 | 首尔半导体股份有限公司 | 发光二极管封装件 |
CN206040686U (zh) * | 2016-06-24 | 2017-03-22 | 首尔半导体股份有限公司 | 发光二极管封装件 |
CN206022415U (zh) * | 2016-06-24 | 2017-03-15 | 首尔半导体股份有限公司 | 发光二极管封装件 |
-
2016
- 2016-06-24 KR KR1020160079400A patent/KR20180000976A/ko not_active Application Discontinuation
-
2017
- 2017-05-22 CN CN201710363240.1A patent/CN107546310B/zh active Active
- 2017-05-22 CN CN201810698176.7A patent/CN108511580A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
CN107546310B (zh) | 2020-05-19 |
CN107546310A (zh) | 2018-01-05 |
CN108511580A (zh) | 2018-09-07 |
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