KR20170137647A - 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩 - Google Patents

발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩 Download PDF

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Publication number
KR20170137647A
KR20170137647A KR1020170068439A KR20170068439A KR20170137647A KR 20170137647 A KR20170137647 A KR 20170137647A KR 1020170068439 A KR1020170068439 A KR 1020170068439A KR 20170068439 A KR20170068439 A KR 20170068439A KR 20170137647 A KR20170137647 A KR 20170137647A
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KR
South Korea
Prior art keywords
light emitting
emitting diode
transparent substrate
wafer
diode chip
Prior art date
Application number
KR1020170068439A
Other languages
English (en)
Korean (ko)
Inventor
다카시 오카무라
Original Assignee
가부시기가이샤 디스코
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시기가이샤 디스코 filed Critical 가부시기가이샤 디스코
Publication of KR20170137647A publication Critical patent/KR20170137647A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Dicing (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Laser Beam Processing (AREA)
  • Led Device Packages (AREA)
KR1020170068439A 2016-06-03 2017-06-01 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩 KR20170137647A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2016-111540 2016-06-03
JP2016111540A JP2017220476A (ja) 2016-06-03 2016-06-03 発光ダイオードチップの製造方法及び発光ダイオードチップ

Publications (1)

Publication Number Publication Date
KR20170137647A true KR20170137647A (ko) 2017-12-13

Family

ID=60546134

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170068439A KR20170137647A (ko) 2016-06-03 2017-06-01 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩

Country Status (4)

Country Link
JP (1) JP2017220476A (zh)
KR (1) KR20170137647A (zh)
CN (1) CN107464860A (zh)
TW (1) TW201812889A (zh)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006278751A (ja) * 2005-03-29 2006-10-12 Mitsubishi Cable Ind Ltd ＧａＮ系半導体発光素子
CN101499508A (zh) * 2008-02-01 2009-08-05 群康科技(深圳)有限公司 发光二极管装置及其制造方法
CN101807568B (zh) * 2010-03-04 2012-05-23 四川锦明光电股份有限公司 多芯片led封装结构及其加工方法
JP2011243875A (ja) * 2010-05-20 2011-12-01 Disco Abrasive Syst Ltd サファイアウェーハの分割方法
KR101843501B1 (ko) * 2011-03-30 2018-03-29 서울반도체 주식회사 발광장치
JP5509394B2 (ja) * 2012-02-01 2014-06-04 パナソニック株式会社 半導体発光素子、その製造方法及び光源装置
CN202616282U (zh) * 2012-05-30 2012-12-19 华南理工大学 一种具有金字塔阵列结构的led芯片
JP2014175354A (ja) * 2013-03-06 2014-09-22 Disco Abrasive Syst Ltd 発光ダイオード
JP6129322B2 (ja) * 2013-08-30 2017-05-17 旭化成株式会社 半導体発光素子及び光学フィルム
CN104993029A (zh) * 2015-07-09 2015-10-21 佛山市南海区联合广东新光源产业创新中心 半导体发光芯片级封装

Also Published As

Publication number Publication date
TW201812889A (zh) 2018-04-01
CN107464860A (zh) 2017-12-12
JP2017220476A (ja) 2017-12-14

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