KR20170126536A - Deposition apparatus - Google Patents

Abstract

Provided is a deposition apparatus capable of improving deposition reliability. The deposition apparatus comprises: a first crucible having a first opening on an upper side thereof; a first nozzle part connected to the first opening; a second crucible having a second opening on an upper side thereof and disposed in the upper part of the first crucible so that at least a part of the second crucible overlaps with the first crucible; and a second nozzle part connected to the second opening.

Description

[0001] DEPOSITION APPARATUS [0002]

The present invention relates to a deposition apparatus.

An electric or electronic element, for example, an organic light emitting element, may include a plurality of thin films. As a method for forming such a thin film, deposition can be exemplified. The deposition is a method in which the evaporation material is heated to be vaporized and attached to the surface of the deposition target to grow the thin film.

The deposition apparatus in which the deposition is performed includes a deposition source for ejecting the deposition material. Generally, the evaporation source includes a crucible capable of accommodating the evaporation material and a nozzle portion providing a flow path of the evaporation material vapor. On the other hand, development of a so-called co-evaporation apparatus in which two or more deposition materials are deposited together as needed is required.

However, if the mixing ratio of the mixed vapor of the deposition materials can not be maintained in the process of depositing the deposition materials having different vaporization temperatures, the composition of the formed thin film may become uneven. For example, when the organic light emitting device includes a thin film having a nonuniform composition, it may cause a decrease in luminous efficiency and lifetime of the organic light emitting device.

In addition, when a plurality of crucibles that accommodate different deposition materials are disposed, the gap between the plurality of nozzle units may be distanced, which may lead to an increase in the difference in movement path between the evaporation material vapors.

Accordingly, it is an object of the present invention to provide a deposition apparatus capable of depositing two or more deposition materials different from each other in one chamber.

In addition, although the two or more deposition materials are deposited in one chamber, the mixing ratio between the deposition materials in the mixed vapor is kept constant, and the deposition materials are uniformly deposited on the large- And to provide a deposition apparatus that can be used.

Another object of the present invention is to provide a deposition apparatus having improved deposition reliability despite deposition of two or more different deposition materials.

The present invention has been made in view of the above problems, and it is an object of the present invention to provide a method of manufacturing the same.

According to an aspect of the present invention, there is provided a deposition apparatus including a first crucible having a first opening on an upper side, a first nozzle portion connected to the first opening, and a second opening on an upper side, A second crucible disposed at an upper portion of the first crucible so that at least a portion of the second crucible overlaps the first crucible, and a second nozzle portion connected to the second opening.

At the plan view, the second opening may overlap with the first crucible.

Further, at the plan view, the first opening may not overlap with the second crucible.

Wherein the first nozzle portion extends to the upper side of the second crucible and the upper end of the first nozzle portion is located above the upper surface of the second crucible and the second nozzle portion and the first nozzle portion are sequentially disposed along the first direction at a plan view have.

In addition, at the plan view, the second opening portion may be positioned biased toward the first nozzle portion side relative to the plane center of the second crucible.

The shortest distance between the first nozzle portion and the second nozzle portion may be greater than 0 mm and less than 140 mm, or the first nozzle portion and the second nozzle portion may be in contact with each other.

The first crucible is configured to receive a first deposition material having a first vaporization temperature and the second crucible can be configured to receive a second deposition material having a second vaporization temperature that is higher than the first vaporization temperature .

The cross-sectional area of the injection hole of the first nozzle portion may be different from the cross-sectional area of the injection hole of the second nozzle portion.

The internal volume of the first crucible may be different from the internal volume of the second crucible.

The deposition apparatus according to another embodiment of the present invention may further include a first valve configured to open and close the first nozzle unit, and a second valve configured to open and close the second nozzle unit.

The apparatus may further include a valve control unit configured to control the opening and closing operations of the first valve and the opening and closing operations of the second valve independently of each other.

A vapor deposition apparatus according to another embodiment of the present invention includes a first heater configured to supply heat to the first crucible, a second heater configured to supply heat to the second crucible, and a second heater configured to supply heat to the second crucible, And a heat insulating member disposed between the heat insulating members.

Further, at a plan view, the heat insulating member may not overlap with the first opening.

The apparatus may further include a temperature controller configured to control the temperature of the first heater and the temperature of the second heater independently of each other.

And a nozzle heater disposed in the housing and configured to heat at least a portion of the first nozzle portion, wherein the first heater, the second crucible, the second heater, and the heat insulating member are housed in the housing, As shown in FIG.

A vapor deposition apparatus according to another embodiment of the present invention includes a third crucible disposed at a side of the first crucible so as not to overlap with the first crucible at a plan view and having a third opening at an upper side thereof, The second nozzle unit, the first nozzle unit, and the third nozzle unit may be sequentially disposed along a first direction at a plan view.

In addition, at the plan view, the third opening may be positioned biased toward the first nozzle portion side relative to the plane center of the third crucible.

And a fourth crucible having a fourth opening on the upper side and disposed on the upper part of the third crucible so that at least part of the third crucible overlaps with the third crucible and a fourth nozzle part connected to the fourth opening, The nozzle unit and the fourth nozzle unit may be sequentially disposed along the first direction at a plan view.

In addition, at the plan view, the fourth opening may be biased toward the third nozzle portion side relative to the plane center of the fourth crucible.

The deposition apparatus according to another embodiment of the present invention is characterized in that the first nozzle unit and the second nozzle unit are sequentially arranged along a first direction at a plan view, and the first crucible and the second nozzle unit The second crucible may form one basic unit, and the basic unit may be repeated along a second direction intersecting with the first direction.

The details of other embodiments are included in the detailed description and drawings.

According to the deposition apparatus according to the embodiment of the present invention, it is possible to arrange two or more crucibles individually accommodating two or more deposition materials having different vaporization temperatures from each other, and vaporize the deposition materials in different crucibles, Can be precisely controlled.

In addition, the plurality of crucibles may be arranged so as to overlap with each other in the vertical direction, thereby reducing the interval between the crucibles and the nozzle units, thereby minimizing the difference in travel path between the vapor of the evaporation material.

Furthermore, even if two or more deposition materials different from each other are deposited in one chamber, a thin film having improved deposition uniformity can be grown.

The effects according to the embodiments of the present invention are not limited by the contents exemplified above, and more various effects are included in the specification.

1 is a perspective view of a deposition apparatus according to an embodiment of the present invention.
2 is an exploded perspective view of the evaporator source assembly of FIG.
3 is a cross-sectional view taken along line III-III 'of FIG.
4 is a perspective view of an evaporation source assembly of a deposition apparatus according to another embodiment of the present invention.
5 is a cross-sectional view taken along the line V-V 'in FIG.
6 is a perspective view of an evaporation source assembly of a deposition apparatus according to another embodiment of the present invention.
7 is a cross-sectional view taken along line VII-VII 'of FIG.
FIG. 8 is a graph illustrating the results of measurement of mixing ratios of the in-film deposition materials according to the substrate position when the deposition process is performed using the deposition apparatus according to an embodiment of the present invention.
FIG. 9 is a graph illustrating a result of measurement of mixing ratios of deposition materials in a thin film according to a substrate position when a deposition process is performed using a conventional deposition apparatus.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. However, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. To fully disclose the scope of the invention to a person skilled in the art, and the invention is only defined by the scope of the claims.

It will be understood that when an element or layer is referred to as being " on " of another element or layer, it includes both a layer directly over or intervening another element or intervening elements. On the other hand, a device being referred to as " directly on " refers to not intervening another device or layer in the middle. Like reference numerals refer to like elements throughout the specification. &Quot; and / or " include each and any combination of one or more of the mentioned items.

Spatially relative terms such as 'below', 'beneath', 'lower', 'above' and 'upper' May be used to readily describe a device or a relationship of components to other devices or components. Spatially relative terms should be understood to include terms in different directions of the device in use, in addition to the directions shown in the figures. For example, when inverting an element shown in the figure, an element described as 'below or beneath' of another element may be placed 'above' another element. Thus, the exemplary term " below " may include both the downward and upward directions.

In the present specification, the first direction X means any one direction in the plane, the second direction Y means a direction intersecting the first direction X in the plane, Z means a direction perpendicular to the plane.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

1 is a perspective view of a deposition apparatus according to an embodiment of the present invention. 2 is an exploded perspective view of the evaporator source assembly of FIG. 3 is a cross-sectional view taken along line III-III 'of FIG.

1 to 3, a deposition apparatus 1000 according to an embodiment of the present invention may include an evaporation source assembly 101, a substrate mounting section 200, and a temperature control section 300. Although not shown in the figure, the deposition apparatus 1000 may further include a chamber (not shown) for providing a space for performing the deposition process.

The substrate mounting part 200 can fix a substrate or the like to be a deposition target. The substrate mount 200 may be configured to move or rotate in at least one direction during the deposition process.

The temperature control unit 300 may be configured to control the temperatures of a plurality of heaters, which are connected to the evaporation source assembly 101 and include a first heater 151 and a second heater 152, which will be described later.

The evaporation source assembly 101 can accommodate the evaporation material therein and eject the evaporation material vapor during the evaporation process. In an exemplary embodiment, the evaporation source assembly 101 includes a first evaporation source 110 including a first crucible 111 and a first nozzle portion 112, a second evaporation source 110 including a second crucible 121 and a second nozzle portion 112 A first heater 151 configured to heat the first crucible 111, a second heater 152 configured to heat the second crucible 121, a second crucible 121 configured to heat the second crucible 121, A heat insulating member 160 for mutually insulating the first crucible 111 and the second crucible 121, and a housing 180 for accommodating the same.

The first crucible 111 has a first opening 111c on the upper side with reference to the drawing and can be configured to receive the first deposition material DM1 in the inner space. The first crucible 111 may include a first crucible main body 111a and a first crucible lid 111b so as to be separable from each other. The upper surface of the first crucible cover 111b defines an upper surface of the first crucible 111 and the first opening 111c may be formed in the first crucible cover 111b.

The first nozzle unit 112 may provide a flow path through which vapor of the first deposition material DM1 contained in the inner space of the first crucible 111 is ejected. The first nozzle unit 112 may be connected to the first opening 111c and protrude upward. The first nozzle part 112 extends along the side surface of the second crucible 121 and the upper end of the first nozzle part 112 may be located above the upper surface of the second crucible 121 . The first nozzle portion 112 and the side surfaces of the second crucible 121 may be in contact with each other, unlike FIG. 3 in which the first nozzle portion 112 is shown apart from the side surface of the second crucible 121. The first opening 111c and / or the first nozzle portion 112 may be biased toward the first direction X relative to the plane center CP ₁ of the first crucible 111.

2 and the like illustrate the case where the first nozzle units 112 are spaced apart from each other in the second direction Y. However, the first nozzle units 112 may be one, Y). ≪ / RTI >

The second crucible 121 has a second opening 121c on the upper side and can be configured to receive the second deposition material DM2 in the inner space. The second deposition material DM2 may be a material different from the first deposition material DM1, for example, a material having a different vaporization temperature. In an exemplary embodiment, the second deposition material DM2 may be a material having a higher vaporization temperature than the first deposition material DM1. This configuration prevents the temperature of the first deposition material DM1 from being changed by the second crucible 121 while the vapor of the first deposition material DM1 is moving through the first nozzle unit 112. [ However, the present invention is not limited thereto.

The second crucible 121 may include a second crucible main body 121a and a second crucible cover 121b so as to be separable from each other. The upper surface of the second crucible cover 121b defines an upper surface of the second crucible 121 and the second opening 121c may be formed in the second crucible cover 121b. The second crucible 121 is disposed on the first crucible 111 such that at least a part of the second crucible 121 overlaps with the first crucible 111 in the third direction Z. The second opening 121c may overlap the first crucible 111, that is, the second opening 121c may overlap the first crucible 111 in the third direction Z at a plan view . Hereinafter, the plan view refers to a time when the evaporation source assembly 101 is viewed from above on the basis of the drawing. On the other hand, the first opening 111c may be positioned so as not to overlap with the second crucible 121 at a plan view, but the present invention is not limited thereto.

In an exemplary embodiment, the internal volume of the second crucible 121 may be different from the internal volume of the first crucible 111. For example, the inner space volume of the first crucible 111 may be larger than the inner space volume of the second crucible 121. In another embodiment, the height of the first crucible may be less than the height of the second crucible, and the inner volume of the first crucible may be less than or equal to the inner volume of the second crucible. The amount of the first deposition material DM1 and the second deposition material DM2 accommodated in the evaporation source assembly 101 is controlled by adjusting the volume difference between the first crucible 111 and the second crucible 121, It is possible to control the mixing ratio of the mixed vapor of the deposition material (DM1) vapor and the second deposition material (DM2) vapor.

The second nozzle unit 122 may provide a flow path through which vapor of the second deposition material DM2 contained in the inner space of the second crucible 121 is ejected. The second nozzle unit 122 may be connected to the second opening 121c and protrude upward. At a plan view, the second nozzle unit 122 may be sequentially disposed in contact with or spaced apart from the first nozzle unit 112 along the first direction X. When the injection hole located at the upper end of the first nozzle part 112 and the injection hole located at the upper end of the second nozzle part 122 are at substantially the same level, the length of the first nozzle part 112 May be longer than the length of the second nozzle portion 122. In addition, the second opening (121c) and / or the second nozzle portion 122 includes a second plane the center of the crucible (121) (CP ₂₎ to the first direction (X) side, for example the first nozzle portion than (112). That is, the second nozzle unit 122 may be positioned between the center CP ₂ of the second crucible 121 and the first nozzle unit 112. In other words, the shortest distance between the first nozzle unit 112 and the second nozzle unit 122 when viewed from the plan view is the center of the plane between the first nozzle unit 112 and the second crucible 121 (CP ₂ May be shorter than the shortest distance between them. In a non-limiting example, the uppermost limit of the shortest distance d _l in the first direction X between the first nozzle portion 112 and the second nozzle portion 122 is less than about 140 mm, less than about 130 mm, Less than 120 mm, less than 110 mm, less than 100 mm, less than 90 mm, less than 80 mm, less than 70 mm, less than 60 mm, less than about 50 mm, less than 40 mm, less than 30 mm, less than about 20 mm, , And the lower limit of the shortest distance (d _L ) may be more than 0 mm. In another embodiment, a first nozzle unit, the separation distance (d _ℓ) in contact 112 and the second nozzle portion 122 may be zero.

The length of the flow path of the evaporation material vapor moving through each nozzle portion is minimized through the arrangement of the first nozzle portion 112 and the first opening portion 111c, the second nozzle portion 122 and the second opening portion 121c It is possible to prevent the evaporation material vapor from being deprived of heat by the nozzle portion or the like during movement. Further, by reducing the separation distance between the injection hole of the first nozzle part 112 and the injection hole of the second nozzle part 122, the difference in the movement path of the first deposition material DM1 vapor and the second deposition material DM2 vapor Thereby reducing the scattering of the mixing ratio of the first deposition material DM1 and the second deposition material DM2.

2 and the like illustrate the case where the second nozzle portions 122 are separated from each other in the second direction Y. However, the second nozzle portions 122 may have one nozzle, Y, and the number of the second nozzle portions 122 may be different from the number of the first nozzle portions 112. In addition,

In the exemplary embodiment, the cross-sectional area of the injection hole of the first nozzle portion 112 and the cross-sectional area of the injection hole of the second nozzle portion 122 may be different. For example, the first and, if the sectional shape of the second nozzle portion (112 122) be substantially circular inside diameter of the first nozzle section an inner diameter (d ₁₎ and the second nozzle portion 122 of (112) (d ₂₎ is Can be different. Thus, the mixing ratio of the mixed vapor of the first deposition material (DM1) vapor and the second deposition material (DM2) vapor can be controlled.

The first heater 151 is configured to supply heat to the first crucible 111 to vaporize the first deposition material DM1 contained in the first crucible 111. The first heater 151 may be arranged to surround at least a part of the first crucible 111 on the side of the first crucible 111. The first heater 151 may be a heating plate or a heat generating coil, but is not limited thereto.

Similarly, the second heater 152 is configured to supply heat to the second crucible 121 to vaporize the second deposition material DM2 contained in the space inside the second crucible 121. The second heater 152 may be arranged to surround at least a part of the second crucible 121 on the side of the second crucible 121.

As described above, the first heater 151 and the second heater 152 may be connected to the temperature controller 300 to receive a signal for controlling the heating temperature of the heater. For example, the heating temperature of the first heater 151 and the heating temperature of the second heater 152 may be independently controlled by the temperature controller 300. The amount of heat to be supplied to the first crucible 111 and the second crucible 121 can be individually controlled and the amount of vaporization of the first deposition material DM1 and the second deposition material DM2 can be separately controlled Accordingly, the mixing ratio of the first deposition material DM1 and the second deposition material DM2 can be more uniformly controlled.

The heat insulating member (160) is disposed between the first crucible (111) and the second crucible (121). When the first crucible 111 and the second crucible 121 are simultaneously heated to different temperatures, the first crucible 111 and the second crucible 121 may be mutually insulated to prevent heat transmission therebetween. At the plan view, the heat insulating member 160 may be arranged so as not to overlap with the first opening 111c.

The housing 180 houses the first crucible 111, the first heater 151, the second crucible 121, the second heater 152 and the heat insulating member 160. For example, the housing 180 may be substantially box-shaped, including a top housing 181 and a bottom housing 182. The top housing 181 has a plurality of through holes 181a so that the first nozzle portion 112 and the second nozzle portion 122 are inserted into the plurality of through holes 181a to be disposed above the top housing 181 But the present invention is not limited thereto, and the top housing 181 may be omitted. The bottom housing 182 may include a lower plate and side walls, and may house the crucibles and constitute an outer wall of the evaporation source assembly 101.

Meanwhile, in the exemplary embodiment, the evaporator source assembly 101 includes a first valve 171 configured to perform opening and closing operations of the first nozzle unit 112, a second valve 171 configured to open and close the second nozzle unit 122, And a nozzle heater 155 configured to heat the first nozzle portion 112 and the second nozzle portion 112. The deposition apparatus 1000 controls the opening and closing operations of the first valve 171 and the second valve 172 And a valve control unit 400 for controlling the valves.

The first valve 171 is configured to open and close at least a portion of the first nozzle unit 112 to adjust the amount of vapor of the first deposition material DM1 ejected through the first nozzle unit 112. The second valve 172 is configured to open and close at least a part of the second nozzle part 122 to control the amount of vapor of the second deposition material DM2 ejected through the second nozzle part 122. [ The valve control unit 400 may be connected to the evaporation source assembly 101 to control the opening and closing operations of the plurality of valves including the first valve 171 and the second valve 172. For example, the opening and closing operations of the first valve 171 and the opening and closing operations of the second valve 172 can be independently controlled by the valve control unit 400. Thus, the mixing ratio of the first deposition material DM1 and the second deposition material DM2 can be more uniformly controlled.

The nozzle heater 155 is configured to heat the first nozzle portion 112. The nozzle heater 155 may be disposed on the side of the housing 180 adjacent to at least a portion of the first nozzle portion 112. In order to prevent the temperature of the vapor of the first deposition material DM1 sprayed through the first nozzle part 112 relatively longer than the second nozzle part 122 from changing during the movement, The vapor of the deposition material (DM1) can be continuously heated. In this case, the nozzle heater 155 may be connected to the temperature controller 300 to receive a signal for controlling the temperature of the nozzle heater 155. For example, the heating temperature of the nozzle heater 155 can be controlled independently of the heating temperature of the first and second heaters 151 and 152. [

Hereinafter, a deposition apparatus according to another embodiment of the present invention will be described. However, in order not to obscure the essence of the present invention, a description of substantially the same configuration as the deposition apparatus according to one embodiment will be omitted, and it will be apparent to those skilled in the art.

4 is a perspective view of an evaporation source assembly of a deposition apparatus according to another embodiment of the present invention. 5 is a cross-sectional view taken along the line V-V 'in FIG.

4 and 5, an evaporation source assembly 102 of a deposition apparatus according to another embodiment of the present invention includes a third evaporation source including a third crucible 131 and a third nozzle unit 132, A third heater 153 configured to heat the third crucible 131, a fourth evaporator 141 configured to heat the fourth crucible 141, The third valve 173 configured to perform opening and closing operations of the third nozzle unit 132 and the fourth valve 174 configured to perform the opening and closing operations of the fourth nozzle unit 142 And is different from the evaporation source assembly 101 of the evaporation apparatus 1000 according to the embodiment of FIGS.

The third crucible 131 may have a third opening 131c on the upper side and may be configured to receive the third deposition material DM3 in the inner space. The third deposition material DM3 may be a material different from the first deposition material DM1 and / or the second deposition material DM2. The third crucible 131 may include a third crucible main body 131a and a third crucible lid 131b, and may be configured to be separable from each other. The upper surface of the third crucible cover 131b defines the upper surface of the third crucible 131 and the third opening 131c is formed in the third crucible cover 131b. The third crucible 131 is arranged so as not to overlap with the first crucible 111 at a planar viewpoint such that the third crucible 131 does not overlap the first crucible 111 in the third direction Z, 111).

In an exemplary embodiment, the internal space volume of the third crucible 131 and the internal space volume of the first crucible 111 may be different. For example, the width of the third crucible 131 in the first direction (X) may be different from the width of the first crucible (111) in the first direction (X). Thus, the mixing ratio of the mixed vapor of the first deposition material (DM1) vapor and the third deposition material (DM3) vapor can be controlled.

The third nozzle part 132 may provide a flow path through which vapor of the third deposition material DM3 contained in the inner space of the third crucible 131 is ejected. The third nozzle unit 132 may be connected to the third opening 131c and protrude upward. The third nozzle unit 132 extends along the side surface of the fourth crucible 141 and the upper end of the third nozzle unit 132 may be located above the upper surface of the fourth crucible 141 . The third nozzle portion 132 and the side surface of the fourth crucible 141 may be in contact with each other, unlike FIG. 5 in which the third nozzle portion 132 is shown apart from the side surface of the fourth crucible 141.

The second nozzle unit 122, the first nozzle unit 112, and the third nozzle unit 132 may be sequentially disposed at or spaced apart from each other along the first direction X at a plan view. The third opening portion 131c and / or the third nozzle portion 132 are located on the other side in the first direction X, for example, in the first nozzle portion 132, than the plane center CP ₃ of the third crucible 131. [ (112). That is, the third nozzle unit 132 may be positioned between the plane center CP ₃ of the third crucible 131 and the first nozzle unit 112. In other words, the shortest distance between the first nozzle unit 112 and the third nozzle unit 132 when viewed from the plan view is the center of the plane between the first nozzle unit 112 and the third crucible 131 (CP ₃ May be shorter than the shortest distance between them.

4 and the like illustrate the case where the third nozzle units 132 are separated from each other in the second direction Y. However, the third nozzle units 132 may be one, Y, and the number of the third nozzle parts 132 may be different from the number of the first nozzle part 112 or the second nozzle part 122. In this case,

The fourth crucible 141 has a fourth opening 141c on the upper side and can be configured to receive the fourth deposition material DM4 in the inner space. The fourth deposition material DM4 may be a material different from the first deposition material DM1, the second deposition material DM2, and / or the third deposition material DM3. The fourth crucible 141 may include a fourth crucible main body 141a and a fourth crucible cover 141b so as to be separable from each other. The upper surface of the fourth crucible cover 141b defines the upper surface of the fourth crucible 141 and the fourth opening 141c may be formed in the fourth crucible cover 141b. The fourth crucible 141 is disposed above the third crucible 131 such that at least a part of the fourth crucible 141 overlaps with the third crucible 131 in the third direction Z. [ The fourth opening 141c may overlap the third crucible 131, that is, the fourth opening 141c may overlap the third crucible 131 in the third direction Z at a plan view . On the other hand, the third opening 131c may be positioned so as not to overlap with the fourth crucible 141 at a plan view, but the present invention is not limited thereto.

In an exemplary embodiment, the inner space volume of the fourth crucible 141 and the inner space volume of the third crucible 131 may be different. For example, the height of the fourth crucible 141 may be different from the height of the third crucible 131.

The fourth nozzle unit 142 may provide a flow path through which vapor of the fourth deposition material DM4 contained in the inner space of the fourth crucible 141 is ejected. The fourth nozzle unit 142 may be connected to the fourth opening 141c and protrude upward. At a plan view, the fourth nozzle unit 142 may be sequentially disposed in contact with or spaced apart from the third nozzle unit 132 along the first direction X. For example, the second nozzle portion 122, the first nozzle portion 112, the third nozzle portion 132, and the fourth nozzle portion 142 are sequentially interrupted along the first direction X, . The fourth opening portion 141c and / or the fourth nozzle portion 142 are located on the other side in the first direction X relative to the plane center CP ₄ of the fourth crucible 141, for example, (132). That is, the fourth nozzle unit 142 may be positioned between the plane center CP ₄ of the fourth crucible 141 and the third nozzle unit 132. In other words, the shortest distance between the third nozzle unit 132 and the fourth nozzle unit 142 when viewed from the plan view is the center of the plane between the third nozzle unit 132 and the fourth crucible 141 (CP ₄ May be shorter than the shortest distance between them. By reducing the distance between the injection holes of the first to fourth nozzle units 112, 122, 132 and 142 through this arrangement, it is possible to reduce the difference in the movement path of the first to fourth deposition material DM4 vapor.

4 and the like illustrate the case where the fourth nozzle units 142 are separated from each other in the second direction Y. However, the fourth nozzle units 142 may be one, Y and the number of the fourth nozzle portions 142 is different from the number of the first nozzle portion 112, the second nozzle portion 122, or the third nozzle portion 132 .

The third heater 153 is configured to supply heat to the third crucible 131 to vaporize the third deposition material DM3 contained in the space inside the third crucible 131. The third heater 153 may be arranged to surround at least a part of the third crucible 131 on the side of the third crucible 131. Similarly, the fourth heater 154 is configured to supply heat to the fourth crucible 141 to vaporize the fourth deposition material DM4 accommodated in the interior space of the fourth crucible 141. The fourth heater 154 may be arranged to surround at least a part of the fourth crucible 141 on the side of the fourth crucible 141.

The third heater 153 and the fourth heater 154 may be connected to the temperature control unit (not shown) of the deposition apparatus to receive a signal for controlling the heating temperature of the heater. For example, the heating temperatures of the first to fourth heaters 154 may be controlled independently of each other by the temperature control unit.

The third valve 173 is configured to open and close at least a portion of the third nozzle unit 132 to control the amount of vapor of the third deposition material DM3 ejected through the third nozzle unit 132. [ The fourth valve 174 is configured to open and close at least a portion of the fourth nozzle unit 142 to control the amount of vapor of the fourth deposition material DM4 ejected through the fourth nozzle unit 142. [ The valve control unit (not shown) of the deposition apparatus may be connected to the evaporation source assembly 102 to independently control the opening and closing operations of the plurality of valves including the first to fourth valves 174.

6 is a perspective view of an evaporation source assembly of a deposition apparatus according to another embodiment of the present invention. 7 is a cross-sectional view taken along line VII-VII 'of FIG.

6 and 7, an evaporation source assembly 103 of a deposition apparatus according to another embodiment of the present invention includes a first evaporation source 111 including a first crucible 111 and a first nozzle unit (not shown) A second evaporation source including the second crucible 121 and the second nozzle unit 122 is repeatedly disposed along the second direction Y and between the adjacent first evaporation sources and the second evaporation sources The deposition source assembly 101 of the deposition apparatus 1000 according to the embodiment of FIGS. 1 to 3 differs from the deposition source assembly 101 of FIG.

Specifically, the first evaporation source including the first crucible 111 and the first nozzle unit (not shown), and the second evaporation source including the second crucible 121 and the second nozzle unit 122, And the basic unit UT may be repeatedly disposed along the second direction Y to form a plurality of units. In the exemplary embodiment, the crucibles disposed in the first crucible 111 and the second crucible 111 side in the second direction Y are all configured to receive the first deposition material DM1, and the second crucible 111 121 and the crucible disposed on the second direction Y side of the second crucible 121 may all be configured to receive the second deposition material DM2. Although FIG. 6 illustrates an evaporator source assembly 103 including two basic units UT repeatedly arranged in the second direction Y, three or more basic units UT may be used.

The barrier ribs 185 may be disposed inside the housing to isolate spaces in which the adjacent basic units UT are accommodated, but the barrier ribs 185 may be omitted.

In another embodiment, the basic unit formed by the first evaporation source and the second evaporation source may be repeatedly disposed along the first direction X to form a plurality of units.

Hereinafter, the present invention will be described in more detail with reference to specific examples and comparative examples.

<Examples>

The deposition process of the first deposition material and the second deposition material was performed while the deposition source assembly and the substrate to be deposited were fixed using the deposition apparatus according to an embodiment of the present invention. The mixing ratio of the deposition materials ) Are shown in Fig. In this case, the coordinates of the first nozzle unit for ejecting the first deposition material is -10, the coordinates of the second nozzle unit for ejecting the second deposition material is +10, and the ejection holes positioned at the upper end of the first nozzle unit 2 The separation distance of the injection hole located at the upper end of the nozzle portion was about 20 mm.

<Comparative Example>

The deposition process of the first deposition material and the second deposition material was performed while the deposition source and the substrate to be deposited were fixed using the conventional deposition apparatus and the measurement result of the mixing ratio of the deposition materials for each substrate position is shown in FIG. In this case, the coordinates of the first nozzle unit for ejecting the first deposition material is -70, the coordinates of the second nozzle unit for ejecting the second deposition material is +70, and the ejection holes located at the upper end of the first nozzle unit 2 The separation distance of the injection hole located at the upper end of the nozzle portion was about 140 mm.

FIG. 8 is a graph illustrating the results of measurement of mixing ratios of the in-film deposition materials according to the substrate position when the deposition process is performed using the deposition apparatus according to an embodiment of the present invention. FIG. 9 is a graph illustrating a result of measurement of mixing ratios of deposition materials in a thin film according to a substrate position when a deposition process is performed using a conventional deposition apparatus.

In FIGS. 8 and 9, the abscissa represents the substrate coordinates, +300 means 300 mm right from the center of the substrate, 0 means the center point of the substrate, and -300 means 300 mm left from the center of the substrate. The vertical axis represents the mixing ratio of the first deposition material and the second deposition material in the deposited thin film and the ratio of the first deposition material and the second deposition material contained in the thin film deposited on the substrate at the position fraction.

Referring to FIG. 8, in the deposition process performed using the deposition apparatus according to an embodiment of the present invention, the deposition mixture ratio of the first deposition material and the second deposition material is relatively uniform according to the substrate position (coordinate) can confirm. Specifically, the mixing ratio of the first deposition material and the second deposition material at the center position of the substrate is 1, and the mixture ratio at the positions -300 and +300 at which the separation distance from the deposition source assembly is maximized is about 1.2.

On the other hand, referring to FIG. 9, in the case of the deposition process performed using the conventional deposition apparatus, it can be confirmed that the deposition mixture ratio of the first deposition material and the second deposition material is non-uniform according to the substrate position. Specifically, the mixing ratio of the first deposition material and the second deposition material at the center of the substrate is 1, while the mixing ratio at the -300 and +300 positions at which the separation distance from the deposition source is maximized is about 3.0.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but many variations and modifications may be made without departing from the spirit and scope of the invention. It will be appreciated that many variations and applications not illustrated above are possible. For example, each component specifically shown in the embodiments of the present invention can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

1000: Deposition device
101: evaporation source assembly
200:
300: Temperature controller
400: valve control section

Claims (20)

A first crucible having a first opening on its upper side;
A first nozzle unit connected to the first opening;
A second crucible having a second opening on the upper side and disposed on the first crucible to overlap at least a part of the first crucible; And
And a second nozzle part connected to the second opening part. The method according to claim 1,
And the second opening overlaps with the first crucible at a plan view. 3. The method of claim 2,
Wherein the first opening does not overlap with the second crucible at a plan view. The method according to claim 1,
Wherein the first nozzle part extends so that an upper end of the first nozzle part is located above the upper surface of the second crucible,
Wherein the second nozzle unit and the first nozzle unit are sequentially disposed along a first direction at a plan view. 5. The method of claim 4,
Wherein the second opening portion is biased toward the first nozzle portion side relative to the plane center of the second crucible at the plan view. 5. The method of claim 4,
Wherein the shortest distance between the first nozzle portion and the second nozzle portion is greater than 0 mm and less than 140 mm, or the first nozzle portion and the second nozzle portion are in contact with each other. The method according to claim 1,
Wherein the first crucible is configured to receive a first deposition material having a first vaporization temperature,
And the second crucible is configured to receive a second deposition material having a second vaporization temperature higher than the first vaporization temperature. The method according to claim 1,
Wherein the cross-sectional area of the injection hole of the first nozzle portion is different from the cross-sectional area of the injection hole of the second nozzle portion. The method according to claim 1,
Wherein an inner space volume of the first crucible is different from an inner space volume of the second crucible. The method according to claim 1,
A first valve configured to open and close the first nozzle unit; And
And a second valve configured to perform opening and closing operations of the second nozzle portion. 11. The method of claim 10,
Further comprising a valve control unit configured to control the opening and closing operations of the first valve and the opening and closing operations of the second valve independently of each other. The method according to claim 1,
A first heater configured to supply heat to the first crucible;
A second heater configured to supply heat to the second crucible; And
And a heat insulating member disposed between the first crucible and the second crucible. 13. The method of claim 12,
Wherein the insulating member does not overlap the first opening at a plan view. 13. The method of claim 12,
And a temperature controller configured to control the temperature of the first heater and the temperature of the second heater independently of each other. 13. The method of claim 12,
A housing for accommodating the first crucible, the first heater, the second crucible, the second heater, and the heat insulating member; And
And a nozzle heater disposed within the housing and configured to heat at least a portion of the first nozzle portion. The method according to claim 1,
A third crucible disposed on the first crucible side so as not to overlap with the first crucible at a plan view and having a third opening on the upper side; And
And a third nozzle unit connected to the third opening,
Wherein the second nozzle portion, the first nozzle portion, and the third nozzle portion are sequentially disposed along a first direction at a plan view. 17. The method of claim 16,
Wherein the third opening is located biased toward the first nozzle portion side relative to the plane center of the third crucible at a plan view. 17. The method of claim 16,
A fourth crucible having a fourth opening on the upper side and disposed on the third crucible to overlap at least a part of the third crucible; And
And a fourth nozzle unit connected to the fourth opening,
Wherein the third nozzle unit and the fourth nozzle unit are sequentially disposed along the first direction at a plan view. 19. The method of claim 18,
Wherein the fourth opening is located at the third nozzle portion side relative to the center of the fourth crucible in plan view. The method according to claim 1,
Wherein the first nozzle portion and the second nozzle portion are sequentially disposed along a first direction at a plan view,
Wherein the first crucible and the second crucible disposed above the first crucible constitute one basic unit,
And the basic unit is repeated along a second direction intersecting with the first direction.

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