KR20170125640A - Semiconductor device and manufacturing method the same - Google Patents

Abstract

An embodiment of the present invention relates to a semiconductor device which includes: a substrate made of metal, silicon or AlN; a first conductive type first reflection layer arranged on the substrate; an active layer arranged on the first reflection layer; a blocking region which is arranged on the active layer and includes a conductive region in the center thereof; and a second conductive type reflection layer arranged on the blocking region. Mesa-etching is performed from the second reflection layer to a part of the blocking region, the active layer, and the first reflection layer in the circumferential region of the conductive region. Accordingly, the present invention can improve thermal characteristics.

Description

Technical Field [0001] The present invention relates to a semiconductor device and a method of manufacturing the same.

Embodiments relate to semiconductor devices and manufacturing methods.

Semiconductor devices including compounds such as GaN and AlGaN have many merits such as wide and easy bandgap energy, and can be used variously as light emitting devices, light receiving devices, and various diodes.

Particularly, a light emitting device such as a light emitting diode or a laser diode using a semiconductor material of Group 3-5 or 2-6 group semiconductors can be applied to various devices such as a red, Blue, and ultraviolet rays. By using fluorescent materials or combining colors, it is possible to realize a white light beam with high efficiency. Also, compared to conventional light sources such as fluorescent lamps and incandescent lamps, low power consumption, , Safety, and environmental friendliness. In addition, when a light-receiving element such as a photodetector or a solar cell is manufactured using a semiconductor material of Group 3-5 or Group 2-6 compound semiconductor, development of a device material absorbs light of various wavelength regions to generate a photocurrent , It is possible to use light in various wavelength ranges from the gamma ray to the radio wave region. It also has advantages of fast response speed, safety, environmental friendliness and easy control of device materials, so it can be easily used for power control or microwave circuit or communication module.

Therefore, a transmission module of the optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, a white light emitting element capable of replacing a fluorescent lamp or an incandescent lamp Diode lighting devices, automotive headlights, traffic lights, and gas and fire sensors. Further, applications can be extended to high frequency application circuits, other power control devices, and communication modules.

For laser diodes used in communications modules, they are designed to operate at low currents. When such a laser diode is applied to LDAF (Laser Diode Autofocus), ToF (Time of Flight), and structured optical sensor, it operates at a high current of several KW, which causes problems such as a decrease in output power and an increase in threshold current do.

The embodiments are intended to provide a semiconductor device and a manufacturing method capable of improving thermal characteristics.

A semiconductor device according to an embodiment includes a substrate made of metal, silicon, or AlN; A first reflective layer of a first conductivity type disposed on the substrate; An active layer disposed on the first reflective layer; A blocking region disposed on the active layer and having a conductive region formed at a central portion thereof; And a second reflective layer of a second conductive type disposed on the blocking region, wherein the second reflective layer is mesa-etched from the second reflective layer to a portion of the active layer and the first reflective layer in a region around the conductive region .

At least one of the first reflective layer and the second reflective layer may be a DBR (Distributed Bragg Reflector).

At least one of the first reflective layer and the second reflective layer may include a semiconductor material having a composition formula of AlxGa (1-x) As (0 <x <1).

The first reflective layer may include a first layer and a second layer, and the aluminum composition ratio of the first layer may be greater than the aluminum composition ratio of the second layer.

The second reflective layer may include a third layer and a fourth layer, and the aluminum composition ratio of the third layer may be greater than the aluminum composition ratio of the fourth layer.

The first reflective layer is repeated n times for the first and second layers, and the second reflective layer is repeated m times for the third and fourth layers, and n may be greater than the m.

Wherein the first reflective layer or the second reflective layer has a thickness of? / 4n, where? Is a wavelength of light emitted from the active layer, n is a refractive index of each layer Lt; / RTI &gt;

The substrate and the first reflective layer may be eutectic-bonded to an adhesive layer.

The adhesive layer may include at least one of AuSn, NiSn, and InAu.

And a second contact electrode disposed on an upper portion of the edge region of the second reflective layer, and the second contact electrode may be disposed in correspondence with the blocking region.

And a passivation layer exposing the second contact electrode and disposed on a top surface of the first reflective layer, a side surface of the first reflective layer, a blocking region and an active layer, and a surface of the second reflective layer.

According to another embodiment of the present invention, there is provided a method of manufacturing a semiconductor device, including: growing a light emitting structure including a second reflective layer, an active layer, a first layer, and a first reflective layer on a growth substrate; Disposing a substrate made of metal, silicon or AlN on the light emitting structure; Separating the growth substrate from the light emitting structure; Etching the light emitting structure by mesa etching; The step of oxidizing the 1-1 layer to form a blocking region in which a conductive region is formed at a central portion; And disposing a second contact electrode on the second reflective layer and disposing a first electrode on a lower end of the substrate.

The semiconductor device and the manufacturing method according to the embodiment can improve the thermal characteristics to increase the luminous intensity output and increase the threshold current, so that the durability and the reliability of the semiconductor device can be improved.

1 is a view showing a semiconductor device according to an embodiment.
2A to 2F are views showing a method of manufacturing a semiconductor device according to an embodiment.
3 is a view showing a proximity sensor module in which semiconductor devices are arranged according to an embodiment.
4 is a view showing an optical communication module in which semiconductor devices according to the embodiment are disposed.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features and advantages of the present invention will be more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG.

In the description of the embodiment according to the present invention, in the case of being described as being formed "on or under" of each element, the upper (upper) or lower (lower) or under are all such that two elements are in direct contact with each other or one or more other elements are indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

The semiconductor device may include various electronic devices such as a light emitting device and a light receiving device. The light emitting device and the light receiving device may include the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer.

The semiconductor device according to this embodiment may be a light emitting device.

The light emitting device emits light by recombination of electrons and holes, and the wavelength of the light is determined by the energy band gap inherent to the material. Thus, the light emitted may vary depending on the composition of the material.

Hereinafter, a semiconductor device according to an embodiment that performs a function corresponding to the laser diode included in the light emitting device will be described.

1 is a view showing a semiconductor device according to an embodiment.

Referring to FIG. 1, the semiconductor device 100 according to the present embodiment may include a substrate 110, a first reflective layer 120, an active layer 130, a blocking region 142, and a second reflective layer 150. The first reflective layer 120, the active layer 130, the blocking region 142, and the second reflective layer 150 may be referred to as a light emitting structure.

The substrate 110 may be a conductive substrate or a nonconductive substrate. When a conductive substrate is used, a metal having excellent electrical conductivity can be used, and a metal having high thermal conductivity can be used or a silicon (Si) substrate can be used because heat generated during operation of the semiconductor device 100 can be sufficiently diffused.

When a nonconductive substrate is used, an AlN substrate, a sapphire (Al ₂ O ₃ ) substrate, or a ceramic substrate can be used.

The substrate 110 can have a mechanical strength enough to separate the growth substrate from the above-described light emitting structure or to separate each semiconductor element unit without causing warping of the entire semiconductor.

A first reflective layer 120 may be disposed on the substrate 110. The first reflective layer 120 may be a first conductive type and the first reflective layer 120 may include a gallium-based compound such as AlGaAs. . The first reflective layer 120 may be a DBR (Distributed Bragg Reflector). That is, the first reflective layer 120 may have a structure in which a first layer and a second layer made of materials having different refractive indexes are alternately stacked at least once.

The first layer and the second layer may include AlGaAs, and more specifically, may be made of a semiconductor material having a composition formula of Al _x Ga _(1-x) As (0 <x <1). Here, as the Al in the first layer or the second layer increases, the refractive index of each layer decreases, and when Ga increases, the refractive index of each layer may increase.

The thickness of each of the first and second layers may be? / 4n,? May be the wavelength of light generated in the active layer, and n may be the refractive index of each layer with respect to the light of the above-mentioned wavelength. Where? Is from 650 to 980 nanometers (nm), and n can be the refractive index of each layer. The first reflective layer having such a structure can have a reflectance of 99.999% with respect to light in a wavelength region of 940 nm.

The thicknesses of the first layer and the second layer can be determined by the above-described formula according to the respective refractive indices and the wavelength? Of the light emitted from the active layer.

The first reflective layer 120 may be doped with a first conductive dopant. The first conductivity type dopant may include n-type dopants such as Si, Ge, Sn, Se, and Te.

The adhesive layer 160 may be disposed on the upper surface of the substrate 110. The adhesive layer 160 may be disposed on the upper surface of the substrate.

The first electrode 115 may be disposed on the lower surface of the substrate 110.

The first reflective layer 120 may be eutectic-bonded to the substrate 110 through the adhesive layer 160. The adhesive layer 160 may include at least one of AuSn, NiSn, and InAu.

The active layer 130 may be disposed on the first reflective layer 120.

The active layer 130 is disposed between the first reflective layer and the second reflective layer and may include a double well structure, a multi-well structure, a single quantum well structure, a multi quantum well (MQW) structure, Or a quantum wire structure.

The active layer 130 may be formed of a pair of well layers and barrier layers such as AlGaInP / GaInP, AlGaAs / AlGaAs, AlGaAs / GaAs, and GaAs / InGaAs using a Group III-V compound semiconductor material But is not limited thereto. The well layer may be formed of a material having an energy band gap smaller than the energy band gap of the barrier layer.

A blocking region 142 may be disposed on the active layer 130 and a blocking region 142 may be formed in the center of which a conductive region 141 is formed. The blocking region 142 may be made of aluminum oxide and function as a current blocking region, and a conductive region 141 may be provided in the central region.

The first 1-1 layer 140 disposed on the active layer 130 in the manufacturing step of the semiconductor device 100 according to the embodiment may include aluminum gallium arsenide, The AlGaAs layer 140 may be provided with a blocking region 142 formed of aluminum oxide (Al ₂ O ₃ ) and a conductive region 141 made of AlGaAs, the AlGaAs reacting with H ₂ O. The light emitted from the active layer through the conductive region 141 can be emitted to the upper region of FIG. 1, and the light transmittance of the first-layer can be excellent as compared with the blocking region 142. The material of the 1-1 layer will be described later. The second reflective layer 150 may be disposed on the blocking region 142.

The second reflective layer 150 may be of a second conductivity type, and the second reflective layer 150 may include a gallium-based compound such as AlGaAs.

The second reflective layer 150 may be doped with a second conductive dopant. The second conductive dopant may be a p-type dopant such as Mg, Zn, Ca, Sr, or Ba.

Conversely, the first reflective layer 120 may be doped with a p-type dopant, and the second reflective layer 150 may be doped with an n-type dopant.

The second reflective layer 150 may be a DBR (Distributed Bragg Reflector). That is, the first reflective layer 120 may have a structure in which a third layer and a fourth layer made of materials having different refractive indices are alternately stacked at least once.

The third layer and the fourth layer may include AlGaAs, and more specifically, may be made of a semiconductor material having a composition formula of AlxGa (1-x) As (0 <x <1). Here, as Al increases, the refractive index of each layer decreases, and when Ga increases, the refractive index of each layer may increase. And, the thickness of each of the third and fourth layers is? / 4n,? Can be the wavelength of light emitted from the active layer, and n can be the refractive index of each layer with respect to light of the above-mentioned wavelength.

The first reflective layer having such a structure can have a reflectance of 99.9% with respect to light in a wavelength region of 940 nm.

The first reflective layer 120 and the second reflective layer 150 may be formed by alternately laminating a first layer / a third layer and a second layer / a fourth layer. In the first reflective layer 120, The number of pairs of the second layer may be greater than the number of pairs of the third layer and the fourth layer in the second reflective layer 150. At this time, the reflectance of the first reflective layer 120 is 99.999% The reflectance of the second reflective layer may be greater than 99.9%. For example, the number of pairs of the first layer and the second layer in the first reflective layer 120 may be 20 to 40, and the number of pairs of the third layer and the fourth layer in the second reflective layer 150 may be 10 To 30 times.

The semiconductor device 100 according to the embodiment may be mesa etched from the second reflective layer 150 to the blocking region 142 and the active layer 130 in the region around the conductive region 141, Lt; RTI ID = 0.0 &gt; mesa &lt; / RTI &gt;

A second contact electrode 155 may be disposed on the second reflective layer 150. A region where the second reflective layer 150 is exposed in a region between the second contact electrodes 155 may be formed in the above- The conductive region of the central region of the semiconductor device 100 may correspond to the conductive region of the central region. Here, the width of the conductive region 141 may be wider or narrower than the width between the second contact electrodes 155. When the width of the conductive region 141 is narrower than the width between the second contact electrodes 155, the light emitted from the active layer can be diffused and transmitted, and the width of the conductive region 142 is larger than the width of the second contact electrode 155 The light emitted from the active layer can be converged and transmitted. The contact electrode 155 can improve contact characteristics between the second reflective layer and the second electrode described later.

In FIG. 1, a passivation layer 170 is disposed on a side surface and a top surface of the mesa-etched light-emitting structure and an upper surface of the first reflective layer. The passivation layer 170 is also disposed on the side surface of the semiconductor element 100 separated by the element unit, so that the semiconductor element 100 can be protected and isolated. The passivation layer 170 may be made of an insulating material, for example, a nitride or an oxide.

The passivation layer 170 may be thinner on the top surface of the light emitting structure than the second contact electrode, with the second contact electrode exposed above the passivation layer. The second electrode 180 may be disposed in electrical contact with the exposed second contact electrode 180. The second electrode 180 may extend to the top of the passivation layer and receive current from the outside.

The second electrode may be made of a conductive material and may be, for example, a metal. Specifically, the second electrode may be formed of a metal such as aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu) ) Or a single layer or a multi-layer structure including at least one of them.

2A to 2F are views showing a method of manufacturing a semiconductor device according to an embodiment.

The second reflective layer 150, the active layer 130, and the first reflective layer 120 are grown on the growth substrate 210 as shown in FIGS. 2A and 2B.

The growth substrate 210 may be formed of a material suitable for semiconductor material growth or a carrier wafer, may be formed of a material having excellent thermal conductivity, and may include a conductive substrate or an insulating substrate.

An etch stop layer 220 may be formed on the growth substrate 210.

For example, in this embodiment, a GaAs substrate of the same kind as the second reflective layer can be used. When the growth substrate 210 is of the same kind as the second reflective layer 150, the lattice constants are matched and a defect such as lattice mismatching may not occur in the second reflective layer.

That is, the second reflective layer 150 is formed by alternately stacking the fourth layers 151-1 and 154-1 and the third layers 151-2 and 154-2, which are made of materials having different refractive indices, Lt; / RTI &gt;

Since the second reflective layer can have a DBR structure as described above, AlGaAs, which is a material of the fourth layer and the third layer, can be supplied and grown. At this time, the supply amounts of Al (aluminum) and Ga , A second reflective layer of a semiconductor material having a composition formula of AlxGa (1-x) As (0 <x <1) can be grown as described above.

For example, the third layer may comprise Al0.88Ga0.12As and the fourth layer may be grown of Al0.16Ga0.84As. May be grown using methods such as chemical vapor deposition (CVD) or molecular beam epitaxy (MBE) or sputtering or hydroxide vapor phase epitaxy (HVPE).

The first layer 145 may be grown on the second reflective layer 150. The first 1-1 layer 145 may be made of the same material as the first reflective layer and the second reflective layer, and may include AlGaAs. Specifically, the first 1-1 layer 145 may be made of AlxGa (1-x) May be made of a semiconductor material having a composition formula of As (0 < x < 1), and may have a composition formula of, for example, Al0.98Ga0.02As.

Then, the active layer and the first reflective layer can be grown on the first layer, and the composition of the active layer and the first reflective layer is the same as that described in FIG. 1, and the growth method is similar to the above- .

The first reflective layer 120 may have a structure in which the first layers 121-1 and 124-1 and the second layers 121-2 and 124-2 having different refractive indices are alternately stacked at least one time .

The substrate 110 may be coupled to the first reflective layer 120 as shown in FIG. 2B.

The substrate 110 may be a conductive substrate or a nonconductive substrate. When a conductive substrate is used, a metal having excellent electrical conductivity can be used, and a metal having high thermal conductivity can be used or a silicon (Si) substrate can be used because heat generated during operation of the semiconductor device 100 can be sufficiently diffused.

When a nonconductive substrate is used, an aluminum nitride such as an AlN substrate can be used. The substrate 110 may be eutectic-bonded to the first reflective layer through the adhesive layer 160, and the composition of the adhesive layer 160 is as described above.

The adhesive layer 160 may include a first adhesive layer 161 and a second adhesive layer 162. The first adhesive layer 161 is disposed on the top of the substrate 110 and the second adhesive layer 162 is disposed on the first The first adhesive layer 161 and the second adhesive layer 162 may be bonded to each other to bond the substrate 110 and the first reflective layer 120 to each other.

The first electrode 115 may be disposed under the substrate 110.

Then, the growth substrate 210 can be separated as shown in FIG. 2C. The removal of the growth substrate 210 can be performed by a laser lift off (LLO) method using an excimer laser or the like in the case of a sapphire substrate, or a dry and wet etching method.

Here, the etch stop layer 200 may protect the second reflective layer 120 when the light emitting structure grown on the growth substrate 210 is removed.

When the excimer laser light having a wavelength in a certain region in the direction of the growth substrate 210 is focused and irradiated by using the laser lift-off method, heat energy is generated at the interface between the growth substrate 210 and the second reflective layer 150, The interface is separated into gallium and nitrogen molecules, and the growth substrate 210 may be instantaneously separated from the portion where the laser beam passes.

The light emitting structure may be mesa etched using the mask 300 as shown in FIG. 2D. At this time, the first reflective layer may be mesa-etched from the second reflective layer to the active layer, and may be mesa-etched to a portion of the first reflective layer. In the mesa etching, an inductively coupled plasma (ICP) etching method can remove the first layer and the active layer from the second reflective layer in the peripheral region, and the mesa etching region can be etched with the side surface inclined.

As shown in FIG. 2E, the edge region of the first 1-1 layer 140 may be changed to a blocking region, for example, by wet oxidation. The details are as follows.

When oxygen is supplied from the edge region of the 1-1 layer 140, AlGaAs of the 1-1 layer may react with H ₂ O to form aluminum oxide (Al ₂ O ₃ ). At this time, by controlling the reaction time and the like, the central region of the 1-1 layer reacts with oxygen only in the edge region without reacting with oxygen, so that aluminum oxide can be formed. Also, the edge region of the 1-1th layer may be changed to the blocking region through ion implantation, but the present invention is not limited thereto. Photons can be supplied with an energy of 300 keV or more at the time of ion implantation.

After the above-described reaction process, conductive AlGaAs may be disposed in the central region of the 1-1 layer, and non-conductive Al ₂ O ₃ may be disposed in the edge region. The AlGaAs in the central region is a region where the light emitted from the active layer advances to the upper region in FIG. 1, and thus can be said to be a conductive region as described above.

2F, a region where the second reflective layer 150 is exposed in a region between the second contact electrodes 155 may be formed in the above-described interconnection region 155. [ May correspond to the conductive region in the central region of the contact region (142). The contact electrode 155 can improve contact characteristics between the second reflective layer and the second electrode described later.

The passivation layer 170 may be thinner on the top surface of the light emitting structure than the second contact electrode, with the second contact electrode exposed above the passivation layer. The second electrode 180 may be disposed in electrical contact with the exposed second contact electrode, and the second electrode 180 may extend from the upper portion of the passivation layer to receive current from the outside.

Then, the passivation layer 170 may include at least one of polyimide (Polymide), silica (SiO _2), or silicon nitride (Si ₃ N _4).

The second electrode may be made of a conductive material and may be, for example, a metal. Specifically, the second electrode may be formed of a metal such as aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu) ) Or a single layer or a multi-layer structure including at least one of them.

The above-described semiconductor element may be a laser diode, and the inside of the two reflection layers may function as a resonator. At this time, electrons and holes are supplied to the active layer from the first reflective layer of the first conductivity type and the second reflective layer of the second conductive type, and when the light emitted from the active layer is reflected and amplified inside the resonator and reaches the threshold current, And may be discharged to the outside through the conductive region.

The light emitted from the semiconductor device according to the embodiment may be a single wavelength and a single phase light, and the single wavelength region may vary depending on the composition of the first and second reflective layers and the active layer.

In the conventional laser diode, the thermal conductivity (52W / m-K) of the GaAs substrate is low, so that the threshold current increases and the light output decreases. However, since the laser diode according to the embodiment uses metal such as MoCu, silicon or AlN as a substrate, the thermal conductivity is higher than that of the conventional GaAs, so that the threshold current can be reduced and the light output can be increased. Further, the first and second reflective layers have a DBR structure with a reflectance close to 100%, so that light efficiency can be improved.

3 is a view showing a proximity sensor module in which semiconductor devices are arranged according to an embodiment.

3, the proximity sensor module 400 includes a substrate 430, a light emitting diode chip 410 mounted on the substrate 430, a vertical resonant surface emitting laser chip or a resonant light emitting diode chip 420, A sensor 450 mounted on the substrate 430 spaced apart from the chips 410 and 420 and a case 440 attached to the substrate 430 and surrounding the chips 410 and 420 and the sensor 450 .

The sensor 450 can operate with a plurality of functions. For example, the light emitted from the light emitting diode chip 410 can sense the three-dimensional motion of the subject, that is, the 3D motion, The light emitted from the resonant cavity light emitting diode chip 420 can sense the distance between the subject and the proximity sensor module 400. [ Alternatively, the sensor 450 may be composed of two sensors, one of which may be a 3D motion sensing device and the other of which may be a distance sensing device. The sensor 450 can perform various functions such as motion sensing of a subject, shape sensing of a subject, distance sensing from a subject, and the functions thereof are not limited.

4 is a view showing an optical communication module in which semiconductor devices according to the embodiment are disposed.

The optical communication module 500 uses an optical transmission device in which a semiconductor device according to the embodiment is mounted, in order to transmit a video signal generated by the video signal generating device 510 to an image display device 520 such as a liquid crystal display.

That is, the optical communication module 500 includes a video signal generating device 510, an image display device 520, an electric cable 530 for DVI, a transmission module 540, a reception module 550, a video signal transmission optical signal connector 560, an optical fiber 570, an electric cable connector 580 for a control signal, a power adapter 590, and an electric cable 600 for DVI.

The optical communication module 500 transmits electric signals between the image signal generator 510 and the transmission module 540 and between the reception module 550 and the image display device 520 by the electric cables 530 and 600 , And transmission between them may be performed by an optical signal. For example, a signal transmission cable including an electro-optical conversion circuit and a photo-electrical conversion circuit in a connector may be used instead of the electric cables 530 and 600.

In addition, the semiconductor device according to the embodiment can be applied to the field of data optical communication such as Ethernet, optical storage network, SoNet, a laser autofocus (LDAF), a sensing operation of a 3D motion recognition sensor, a VR / have.

The above-described light emitting device is constituted by a light emitting device package and can be used as a light source of an illumination system, for example, as a light source of an image display device or a light source of an illumination device.

When used as a backlight unit of a video display device, it can be used as an edge-type backlight unit or as a direct-type backlight unit. When used as a light source of a lighting device, it can be used as a regulator or bulb type. It is possible.

The light emitting element includes a laser diode in addition to the light emitting diode described above.

As the light receiving element, a photodetector, which is a kind of transducer that detects light and converts the intensity of the light into an electric signal, is exemplified. As such a photodetector, a photodiode (e.g., a PD with a peak wavelength in a visible blind spectral region or a true blind spectral region), a photodiode (e.g., a photodiode such as a photodiode (silicon, selenium), a photoconductive element (cadmium sulfide, cadmium selenide) , Photomultiplier tube, phototube (vacuum, gas-filled), IR (Infra-Red) detector, and the like.

In addition, a semiconductor device such as a photodetector may be fabricated using a direct bandgap semiconductor, which is generally excellent in photo-conversion efficiency. Alternatively, the photodetector has a variety of structures, and the most general structure includes a pinned photodetector using a pn junction, a Schottky photodetector using a Schottky junction, and a metal-semiconductor metal (MSM) photodetector have.

The photodiode, like the light emitting device, may include the first conductivity type semiconductor layer having the structure described above, the active layer, and the second conductivity type semiconductor layer, and may have a pn junction or a pin structure. The photodiode operates by applying reverse bias or zero bias. When light is incident on the photodiode, electrons and holes are generated and a current flows. At this time, the magnitude of the current may be approximately proportional to the intensity of the light incident on the photodiode.

A photovoltaic cell or a solar cell is a type of photodiode that can convert light into current. The solar cell, like the light emitting device, may include the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer having the above-described structure.

In addition, it can be used as a rectifier of an electronic circuit through a rectifying characteristic of a general diode using a p-n junction, and can be applied to an oscillation circuit or the like by being applied to a microwave circuit.

In addition, the above-described semiconductor element is not necessarily implemented as a semiconductor, and may further include a metal material as the case may be. For example, a semiconductor device such as a light receiving element may be implemented using at least one of Ag, Al, Au, In, Ga, N, Zn, Se, P, or As, Or may be implemented using a doped semiconductor material or an intrinsic semiconductor material.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100: semiconductor device 110: substrate
115: first electrode 120: first reflective layer
130: active layer 140: 1-1 layer
141: conductive region 142: blocking region
150: second reflective layer 155: second semiconductor electrode layer
160: adhesive layer 170: passivation layer
180: second electrode 210: growth substrate
220: etch stop layer 300: mask

Claims (12)

A substrate made of metal, silicon or AlN;
A first reflective layer of a first conductivity type disposed on the substrate;
An active layer disposed on the first reflective layer;
A blocking region disposed on the active layer and having a conductive region formed at a central portion thereof; And
And a second reflective layer of a second conductivity type disposed on the blocking region,
And a mesa-etching is performed from the second reflective layer in the region around the conductive region to a portion of the blocking region, the active layer, and a portion of the first reflective layer. The method according to claim 1,
Wherein at least one of the first reflective layer and the second reflective layer is a DBR (Distributed Bragg Reflector). The method according to claim 1,
Wherein at least one of the first reflective layer and the second reflective layer comprises a semiconductor material having a composition formula of AlxGa (1-x) As (0 < x < 1). The method of claim 3,
Wherein the first reflective layer includes a first layer and a second layer, and the aluminum composition ratio of the first layer is larger than the aluminum composition ratio of the second layer. The method of claim 3,
Wherein the second reflective layer includes a third layer and a fourth layer, and the aluminum composition ratio of the third layer is larger than the aluminum composition ratio of the fourth layer. The method of claim 3,
Wherein the first reflective layer is repeated n times for the first layer and the second layer, and the second reflective layer is repeated m times for the third layer and the fourth layer, and n is larger than the m. The method of claim 3,
Wherein the first reflective layer or the second reflective layer has a thickness of? / 4n, where? Is a wavelength of light emitted from the active layer, n is a refractive index of each layer / RTI &gt; The method according to claim 1,
Wherein the substrate and the first reflective layer are eutectic-bonded to an adhesive layer. 9. The method of claim 8,
Wherein the adhesive layer comprises at least one of AuSn, NiSn, and InAu. The method according to claim 1,
And a second contact electrode disposed on an upper portion of an edge region of the second reflective layer, wherein the second contact electrode is disposed in correspondence with the blocking region. 11. The method of claim 10,
And a passivation layer exposing the second contact electrode, the passivation layer being disposed on a top surface of the first reflective layer, a side surface of the first reflective layer, a blocking region, and an active layer, and a surface of the second reflective layer. Growing a light emitting structure including a second reflective layer, an active layer, a first layer, and a first reflective layer on a growth substrate;
Disposing a substrate made of metal, silicon or AlN on the light emitting structure;
Separating the growth substrate from the light emitting structure;
Etching the light emitting structure by mesa etching;
The step of oxidizing the 1-1 layer to form a blocking region in which a conductive region is formed at a central portion; And
Disposing a second contact electrode on the second reflective layer, and disposing a first electrode on a lower end of the substrate.

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