KR102250479B1 - Laser diode, semiconductor device package, and object detecting apparatus - Google Patents

Abstract

The embodiment relates to a semiconductor device, a method of manufacturing a semiconductor device, a semiconductor device package, and an object detection apparatus including a semiconductor device package.
The laser diode according to the embodiment includes: a substrate; A first conductive type reflective layer disposed on the substrate; A plurality of light emitting structures provided with a plurality of light emitting structures including an active layer and a second conductive type reflective layer disposed on the first conductive type reflective layer; A first electrode electrically connected to the first conductivity type reflective layer; A second electrode electrically connected to the second conductive type reflective layer; A first insulating layer disposed on the first electrode and providing an opening; A first bonding pad disposed on the plurality of light emitting structures and electrically connected to the first electrode; And a second bonding pad disposed on the plurality of light emitting structures to be spaced apart from the first bonding pad and electrically connected to the second electrode. It may include.
The semiconductor device according to the embodiment may have a first region in which the first bonding pad is disposed and a second region in which the second bonding pad is disposed. According to an embodiment, the opening of the first insulating layer is disposed in the first and second areas, and is disposed between a plurality of light emitting structures, and the shortest distance between two opposite points of the opening is between two opposite points on the upper surface of the It can be provided smaller than the shortest distance.

Description

Laser diode, semiconductor device package, object detection device {LASER DIODE, SEMICONDUCTOR DEVICE PACKAGE, AND OBJECT DETECTING APPARATUS}

The embodiment relates to a semiconductor device, a method of manufacturing a semiconductor device, a semiconductor device package, and an object detection apparatus including a semiconductor device package.

A semiconductor device including a compound such as GaN or AlGaN has many advantages, such as having a wide and easy-to-adjust band gap energy, and thus can be variously used as a light-emitting device, a light-receiving device, and various diodes.

In particular, light emitting devices such as light emitting diodes and laser diodes using a group 3-5 or group 2-6 compound semiconductor material are developed in red, green, and light-emitting devices such as thin film growth technology and device materials. There is an advantage of being able to implement light in various wavelength bands such as blue and ultraviolet rays. In addition, a light-emitting device such as a light-emitting diode or a laser diode using a group 3-5 or group 2-6 compound semiconductor material can implement a white light source with good efficiency by using a fluorescent material or by combining colors. These light-emitting devices have advantages of low power consumption, semi-permanent life, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps.

In addition, when a light-receiving device such as a photodetector or a solar cell is also manufactured using a Group 3-5 or Group 2-6 compound semiconductor material, the development of the device material absorbs light in various wavelength ranges to generate a photocurrent. By doing so, light in various wavelength ranges from gamma rays to radio wavelength ranges can be used. In addition, such a light-receiving device has advantages of fast response speed, safety, environmental friendliness, and easy control of device materials, and thus can be easily used for power control or ultra-high frequency circuits or communication modules.

Therefore, the semiconductor device can replace the transmission module of the optical communication means, the light emitting diode backlight that replaces the Cold Cathode Fluorescence Lamp (CCFL) that constitutes the backlight of the LCD (Liquid Crystal Display) display device, and the fluorescent lamp or incandescent bulb Applications are expanding to white light emitting diode lighting devices, automobile headlights, traffic lights, and sensors that detect gas or fire. In addition, the application of the semiconductor device can be extended to high frequency application circuits, other power control devices, and communication modules.

The light emitting device (Light Emitting Device) may be provided as a pn junction diode having a characteristic in which electrical energy is converted into light energy using, for example, a group 3-5 element or a group 2-6 element on the periodic table. Various wavelengths can be implemented by adjusting the composition ratio.

Meanwhile, as the application fields of semiconductor devices are diversified, high output and high voltage driving are required. Due to the high power and high voltage driving of the semiconductor device, the temperature is increasing a lot due to the heat generated from the semiconductor device. However, when heat dissipation from a semiconductor device is not smooth, light output may decrease as a temperature increases, and power conversion efficiency (PCE) may decrease. Accordingly, there is a need for a method for efficiently dissipating heat generated from a semiconductor device and improving power conversion efficiency.

The embodiment may provide a semiconductor device having excellent heat dissipation characteristics, a method for manufacturing the same, a semiconductor device package, and an object detection device.

The embodiment may provide a semiconductor device capable of providing high-output light by increasing light extraction efficiency, a method of manufacturing the same, a semiconductor device package, and an object detection device.

The embodiment may provide a semiconductor device capable of increasing power conversion efficiency, a method of manufacturing the same, a semiconductor device package, and an object detection device.

The laser diode according to the embodiment includes: a substrate; A first conductive type reflective layer disposed on the substrate; A plurality of light emitting structures provided with a plurality of light emitting structures including an active layer and a second conductive type reflective layer disposed on the first conductive type reflective layer; A first electrode electrically connected to the first conductivity type reflective layer; A second electrode electrically connected to the second conductive type reflective layer; A first insulating layer disposed on the first electrode and providing an opening; A first bonding pad disposed on the plurality of light emitting structures and electrically connected to the first electrode; And a second bonding pad disposed on the plurality of light emitting structures to be spaced apart from the first bonding pad and electrically connected to the second electrode. And a first zone in which the first bonding pad is disposed; A second area in which the second bonding pad is disposed; And the opening of the first insulating layer is disposed in the first region and the second region, and is disposed between the plurality of light emitting structures, and the shortest distance between two points facing the opening is opposite to the upper surface of the light emitting structure. The sight can be provided less than the shortest distance between the two points.

According to an embodiment, the first electrode is disposed under the first bonding pad and under the second bonding pad, and provides a plurality of openings exposing the active layer and the second conductive type reflective layer of the plurality of light emitting structures. can do.

According to an embodiment, the second electrode is disposed under the first bonding pad and under the second bonding pad, and the first electrode disposed around the active layer of the plurality of light emitting structures under the first bonding pad It is possible to provide a plurality of openings exposing the.

According to an embodiment, the second electrode may contact an upper surface of the second conductive type reflective layer of the plurality of light emitting structures.

The laser diode according to the embodiment may further include a second insulating layer disposed between the first electrode and the second electrode.

According to an embodiment, the second insulating layer provides a plurality of first openings and a plurality of second openings disposed under the first bonding pad, and the first bonding pad and the first electrode are provided with the second insulation. It is electrically connected through a plurality of first openings provided in the layer, and the second conductive type reflective layer of the plurality of light emitting structures and the second electrode are electrically connected through a plurality of second openings provided in the second insulating layer. I can.

According to an embodiment, the second insulating layer provides a plurality of openings disposed under the second bonding pad, and the second conductive reflective layer and the second electrode of the plurality of light emitting structures are the second insulating layer. It may be electrically connected through a plurality of openings provided in the.

According to an embodiment, the second electrode includes an upper electrode disposed in contact with an upper surface of the second conductive type reflective layer of the plurality of light emitting structures, and a connection electrode disposed on the first electrode between the plurality of light emitting structures. It may include.

According to an embodiment, the substrate may be provided as an intrinsic semiconductor substrate.

According to an embodiment, a reflectance of the first conductivity type reflective layer may be provided smaller than that of the second conductivity type reflective layer.

A semiconductor device according to an embodiment is disposed in a first region, a first reflective layer of a first conductivity type, a first active layer disposed on the first reflective layer, and a second reflective layer of a second conductivity type disposed on the first active layer A first light emitting structure comprising a; A third reflective layer of a first conductivity type, a second active layer disposed on the third reflective layer, and a fourth reflective layer of a second conductivity type disposed on the second active layer and disposed spaced apart from the first light emitting structure in a second region A second light emitting structure comprising a; A first opening disposed in the first region and the second region to be electrically connected to the first reflective layer and the third reflective layer, and disposed on the first reflective layer to expose the first active layer and the second reflective layer A first electrode provided on the third reflective layer to provide a second opening exposing the second active layer and the fourth reflective layer; The first is disposed in the first area to be electrically connected to the second reflective layer, is disposed in the second area to be electrically connected to the fourth reflective layer, and is disposed around the first active layer in the first area A second electrode exposing the electrode and providing a third opening having an area smaller than that of the first active layer; A fourth opening disposed on the second electrode in the first region and the second region, and exposing the first electrode disposed in a region provided with the third opening in the first region, and the second A first insulating layer exposing the second electrode disposed around the second active layer in an area and providing a fifth opening having an area smaller than that of the second active layer; A first bonding pad disposed on the first light emitting structure in the first region and electrically connected to the first electrode disposed around the first active layer through a region provided with the fourth opening; It is disposed on the second light emitting structure in the second area, is disposed to be spaced apart from the first bonding pad, and is electrically connected to the second electrode disposed around the second active layer through an area provided with the fifth opening. A second bonding pad; It may include.

According to an embodiment, a plurality of first light-emitting structures including the first light-emitting structure are disposed under the first bonding pad, and a second plurality of light-emitting structures including the second light-emitting structure under the second bonding pad A structure is disposed, and each of the first plurality of light emitting structures and the second plurality of light emitting structures includes a first conductive type reflective layer, an active layer disposed on the first conductive type reflective layer, and a second conductive type reflective layer disposed on the active layer. Can include.

According to an embodiment, the second electrode is provided in contact with the upper surface of the second conductive type reflective layer of the first plurality of light emitting structures and the upper surface of the second conductive type reflective layer of the second plurality of light emitting structures. I can.

According to an embodiment, the second electrode is disposed between the first plurality of light-emitting structures and the first bonding pad in the first area, and the second electrode is the second plurality of light-emitting structures in the second area. And the second bonding pad, wherein the second electrode provides a plurality of openings exposing an upper surface of the first electrode under the first bonding pad, and the second electrode of the first plurality of light emitting structures The conductive type reflective layer may be electrically connected, and the second electrode may be electrically connected to the second conductive type reflective layer of the second plurality of light emitting structures under the second bonding pad.

The semiconductor device according to the embodiment further includes a second insulating layer disposed between the first electrode and the second electrode, wherein the second insulating layer comprises the first plurality of light emitting structures under the first bonding pad. Providing a plurality of openings electrically connected to the second conductive type reflective layer and the second electrode, and providing a plurality of openings electrically connected to the first conductive type reflective layer and the first bonding pad of the first plurality of light emitting structures, and The second insulating layer may provide a plurality of openings under the second bonding pad to electrically connect the second conductive type reflective layer of the second plurality of light emitting structures to the second electrode.

According to an embodiment, the first electrode is disposed between the first plurality of light-emitting structures and the first bonding pad in the first area, and the first electrode is the second plurality of light-emitting structures in the second area. And the second bonding pad, wherein the first electrode provides a plurality of openings for exposing the second conductive type reflective layer of the first plurality of light emitting structures under the first bonding pad, and the first plurality of The first conductive type reflective layer of the light emitting structure is electrically connected, and the first electrode provides a plurality of openings exposing the second conductive type reflective layer of the second plurality of light emitting structures under the second bonding pad, and the first electrode 2 It may be electrically connected to the first conductive type reflective layer of the plurality of light emitting structures.

According to an embodiment, the second electrode may include an upper electrode disposed in contact with an upper surface of the second reflective layer and an upper surface of the fourth reflective layer, and between the first light emitting structure and the second light emitting structure. It can be placed on one electrode.

The semiconductor device according to the embodiment further includes a first conductive type reflective layer physically connecting the first reflective layer and the third reflective layer, and the first electrode is disposed in contact with an upper surface of the first conductive type reflective layer. Can be.

The semiconductor device according to the embodiment may further include a substrate disposed under the first light emitting structure and the second light emitting structure, and the substrate may be provided as an intrinsic semiconductor substrate.

According to an embodiment, the reflectance of the first reflective layer may be smaller than that of the second reflective layer, and the reflectance of the third reflective layer may be provided smaller than that of the fourth reflective layer.

According to an embodiment, an upper surface area of the first electrode in contact with the lower surface of the first bonding pad through the fourth opening may be provided in a space surrounded by the first plurality of light emitting structures.

According to an embodiment, an upper surface region of the second electrode in contact with the lower surface of the second bonding pad through the fifth opening may be provided in a space surrounded by the second plurality of light emitting structures.

A semiconductor device package according to an embodiment includes: a submount: a semiconductor device disposed on the submount:, wherein the semiconductor device is disposed in a first region, a first reflective layer of a first conductivity type, and the first reflective layer A first light emitting structure including a first active layer disposed on the first active layer and a second reflective layer of a second conductivity type disposed on the first active layer; A third reflective layer of a first conductivity type, a second active layer disposed on the third reflective layer, and a fourth reflective layer of a second conductivity type disposed on the second active layer and disposed spaced apart from the first light emitting structure in a second region A second light emitting structure comprising a; A first opening disposed in the first region and the second region to be electrically connected to the first reflective layer and the third reflective layer, and disposed on the first reflective layer to expose the first active layer and the second reflective layer A first electrode provided on the third reflective layer to provide a second opening exposing the second active layer and the fourth reflective layer; The first is disposed in the first area to be electrically connected to the second reflective layer, is disposed in the second area to be electrically connected to the fourth reflective layer, and is disposed around the first active layer in the first area A second electrode exposing the electrode and providing a third opening having an area smaller than that of the first active layer; A fourth opening disposed on the second electrode in the first region and the second region, and exposing the first electrode disposed in a region provided with the third opening in the first region, and the second A first insulating layer exposing the second electrode disposed around the second active layer in an area and providing a fifth opening having an area smaller than that of the second active layer; A first bonding pad disposed on the first light emitting structure in the first region and electrically connected to the first electrode disposed around the first active layer through a region provided with the fourth opening; It is disposed on the second light emitting structure in the second area, is disposed to be spaced apart from the first bonding pad, and is electrically connected to the second electrode disposed around the second active layer through an area provided with the fifth opening. A second bonding pad; The semiconductor device includes: a first surface on which the first bonding pad and the second bonding pad are disposed, and a second surface disposed in a direction opposite to the first surface, and the first bonding pad And the second bonding pad may be electrically connected to the submount, and light generated by the semiconductor device may be emitted to the outside through the second surface.

An object detection apparatus according to an embodiment includes a semiconductor device package and a light receiving unit receiving reflected light of light emitted from the semiconductor device package, wherein the semiconductor device package comprises: a submount: a semiconductor device disposed on the submount Including:, wherein the semiconductor device is disposed in the first region, a first reflective layer of a first conductivity type, a first active layer disposed on the first reflective layer, and a second conductive type disposed on the first active layer A first light emitting structure including two reflective layers; A third reflective layer of a first conductivity type, a second active layer disposed on the third reflective layer, and a fourth reflective layer of a second conductivity type disposed on the second active layer and disposed spaced apart from the first light emitting structure in a second region A second light emitting structure comprising a; A first opening disposed in the first region and the second region to be electrically connected to the first reflective layer and the third reflective layer, and disposed on the first reflective layer to expose the first active layer and the second reflective layer A first electrode provided on the third reflective layer to provide a second opening exposing the second active layer and the fourth reflective layer; The first is disposed in the first area to be electrically connected to the second reflective layer, is disposed in the second area to be electrically connected to the fourth reflective layer, and is disposed around the first active layer in the first area A second electrode exposing the electrode and providing a third opening having an area smaller than that of the first active layer; A fourth opening disposed on the second electrode in the first region and the second region, and exposing the first electrode disposed in a region provided with the third opening in the first region, and the second A first insulating layer exposing the second electrode disposed around the second active layer in an area and providing a fifth opening having an area smaller than that of the second active layer; A first bonding pad disposed on the first light emitting structure in the first region and electrically connected to the first electrode disposed around the first active layer through a region provided with the fourth opening; It is disposed on the second light emitting structure in the second area, is disposed to be spaced apart from the first bonding pad, and is electrically connected to the second electrode disposed around the second active layer through an area provided with the fifth opening. A second bonding pad; The semiconductor device includes: a first surface on which the first bonding pad and the second bonding pad are disposed, and a second surface disposed in a direction opposite to the first surface, and the first bonding pad And the second bonding pad may be electrically connected to the submount, and light generated by the semiconductor device may be emitted to the outside through the second surface.

A method of manufacturing a semiconductor device according to an embodiment includes forming a first conductive type reflective layer, an active layer, and a second conductive type reflective layer on a substrate; Performing mesa etching on the second conductive type reflective layer and the active layer, and forming a plurality of light emitting structures spaced apart from each other; Forming a first electrode disposed on the first conductive type reflective layer and exposing the plurality of light emitting structures; Forming a first insulating layer disposed on the first electrode and exposing an upper surface of the plurality of light emitting structures; An upper electrode disposed in contact with an upper surface of the plurality of light emitting structures exposed by the first insulating layer, and a connection electrode disposed on the first insulating layer and connecting the upper electrode, the first insulation Forming a second electrode providing a first opening exposing a portion of the upper surface of the layer; A second opening disposed on the second electrode and formed in an area provided with the first opening to expose a partial area of an upper surface of the first electrode and having an area smaller than that of the active layer, and the second electrode Forming a second insulating layer exposing a portion of the upper surface of the layer and providing a third opening having an area smaller than that of the active layer; Forming a first bonding pad disposed over the second opening and electrically connected to the first electrode, and a second bonding pad disposed over the third opening and electrically connected to the second electrode; It may include.

According to the semiconductor device and its manufacturing method, the semiconductor device package, and the object detection device according to the embodiment, there is an advantage of providing excellent heat dissipation characteristics.

According to the semiconductor device and the manufacturing method thereof, the semiconductor device package, and the object detection device according to the embodiment, there is an advantage of improving light extraction efficiency and providing high-output light.

According to the semiconductor device and its manufacturing method, a semiconductor device package, and an object detection device according to an embodiment, there is an advantage of improving power conversion efficiency.

According to the semiconductor device and its manufacturing method, a semiconductor device package, and an object detection device according to an embodiment, there is an advantage of reducing manufacturing cost and improving reliability.

1 is a diagram illustrating a semiconductor device according to an embodiment of the present invention.
FIG. 2 is a diagram illustrating a region A of the semiconductor device shown in FIG. 1.
3 is a cross-sectional view taken along line AA of the semiconductor device shown in FIG. 2.
4 is a diagram illustrating a region B of the semiconductor device shown in FIG. 1.
5 is a cross-sectional view taken along line BB of the semiconductor device shown in FIG. 4.
6 is a diagram illustrating a contact area between a bonding pad and an electrode in a semiconductor device according to an exemplary embodiment of the present invention.
7 is a diagram showing an example of a conventional semiconductor device.
FIG. 8 is a diagram illustrating light emission characteristics of the semiconductor device shown in FIG. 7.
9A to 9C are views showing an example in which a light emitting structure is formed in a method of manufacturing a semiconductor device according to an embodiment of the present invention.
10A to 10C are diagrams illustrating an example in which a first electrode is formed in a method of manufacturing a semiconductor device according to an exemplary embodiment of the present invention.
11A to 11C are views showing an example in which a second insulating layer is formed in a method of manufacturing a semiconductor device according to an exemplary embodiment of the present invention.
12A to 12C are diagrams illustrating an example in which a second electrode is formed in a method of manufacturing a semiconductor device according to an exemplary embodiment of the present invention.
13A to 13C are diagrams illustrating an example in which a third insulating layer is formed in a method of manufacturing a semiconductor device according to an exemplary embodiment of the present invention.
14A to 14C are views showing an example in which a first bonding pad and a second bonding pad are formed in a method of manufacturing a semiconductor device according to an exemplary embodiment of the present invention.
15 is a diagram illustrating a semiconductor device package according to an embodiment of the present invention.
16 is a perspective view of a mobile terminal to which an autofocus device including a semiconductor device package according to an exemplary embodiment is applied.

Hereinafter, embodiments will be described with reference to the accompanying drawings. In the description of the embodiment, each layer (film), region, pattern, or structure is "on/over" or "under" of the substrate, each layer (film), region, pad, or patterns. In the case of being described as being formed in, "on/over" and "under" include both "directly" or "indirectly" formed. do. In addition, the criteria for the top/top or bottom of each layer will be described based on the drawings, but embodiments are not limited thereto.

Hereinafter, a semiconductor device, a semiconductor device manufacturing method, a semiconductor device package, and an object detection apparatus including a semiconductor device package according to an exemplary embodiment of the present invention will be described in detail with reference to the accompanying drawings.

The semiconductor device according to an embodiment of the present invention may be selected from a light emitting diode device and a light emitting device including a laser diode device. As an example, the semiconductor device according to the embodiment may be a vertical cavity surface emitting laser (VCSEL) semiconductor device. A vertical cavity surface emission laser (VCSEL) semiconductor device may emit a beam in a direction perpendicular to an upper surface. The vertical cavity surface emission laser (VCSEL) semiconductor device may emit a beam with a beam angle of view of, for example, about 15 degrees to 25 degrees. The vertical cavity surface emission laser (VCSEL) semiconductor device may include a single emission aperture or a plurality of emission apertures that emit a circular beam. The light emitting aperture may be provided with a diameter of several micrometers to tens of micrometers, for example.

Then, a semiconductor device according to an embodiment of the present invention will be described with reference to FIGS. 1 to 5.

1 is a view showing a semiconductor device according to an embodiment of the present invention, FIG. 2 is a view showing a region A of the semiconductor device shown in FIG. 1, and FIG. 3 is FIG. 4 is a cross-sectional view, and FIG. 4 is a view showing region B of the semiconductor device shown in FIG. 1, and FIG. 5 is a cross-sectional view taken along line BB of the semiconductor device shown in FIG.

On the other hand, in order to facilitate understanding, in Fig. 1, Fig. 2 and Fig. 4, the first bonding pad 155 and the second bonding disposed on the upper part so that the arrangement relationship of the components located at the lower part can be easily grasped. The pad 165 was treated as transparent.

The semiconductor device 200 according to an exemplary embodiment of the present invention includes a plurality of light emitting structures P11, P12, P13, P21, P22, P23, ..., and a first electrode 150 as shown in FIGS. 1 to 5. ), a second electrode 160, a first bonding pad 155, and a second bonding pad 165.

The semiconductor device 200 according to the embodiment may be a vertical cavity surface emission laser (VCSEL), and light generated from a plurality of light emitting structures P11, P12, P13, P21, P22, P23, ... It can emit at a beam angle of view of about 25 degrees to 25 degrees. The plurality of light emitting structures (P11, P12, P13, P21, P22, P23, …) include a first plurality of light emitting structures (P11, P12, P13, ...) disposed under the first bonding pad 155 and the A plurality of second light emitting structures P21, P22, P23, ... disposed under the second bonding pad 165 may be included.

Each of the plurality of light emitting structures P11, P12, P13, P21, P22, P23, ... may include a first conductive type reflective layer, an active layer, and a second conductive type reflective layer. For example, the reflective layer may be provided as a Distributed Bragg Reflector (DBR) layer. Each of the plurality of light emitting structures P11, P12, P13, P21, P22, P23, ... may be formed in a similar structure, and the semiconductor device 200 according to the embodiment may be described with reference to the cross-sectional views shown in FIGS. 3 and 5. ) To explain the stacked structure.

The semiconductor device 200 according to the embodiment includes a first bonding pad 155 disposed in a first area and a second bonding pad 165 disposed in a second area, as shown in FIGS. 1 to 5. Can include. The first bonding pad 155 and the second bonding pad 165 may be disposed to be spaced apart from each other.

In addition, the semiconductor device 200 according to the embodiment may include a plurality of first light emitting structures P11, P12, P13,… disposed in the first region, as shown in FIGS. 1 to 3. have. The first plurality of light emitting structures P11, P12, P13, ... may be disposed under the first bonding pad 155. The first plurality of light emitting structures P11, P12, P13, ... may be disposed to be spaced apart from each other.

The first plurality of light emitting structures P11, P12, P13, ... may each include a first conductive type reflective layer, an active layer disposed on the first conductive type reflective layer, and a second conductive type reflective layer disposed on the active layer.

The first conductive type reflective layer of the first plurality of light emitting structures P11, P12, P13, P14, ... may be referred to as a lower reflective layer. In addition, the second conductive type reflective layer of the first plurality of light emitting structures P11, P12, P13, ... may be referred to as an upper reflective layer.

In this case, the first conductive type reflective layers constituting the plurality of first light emitting structures P11, P12, P13, ... may be electrically connected to each other. In addition, the first conductive type reflective layers constituting the plurality of first light emitting structures P11, P12, P13, ... may be physically connected to each other to be provided.

Active layers constituting the first plurality of light emitting structures P11, P12, P13, ... may be disposed to be spaced apart from each other.

The second conductive type reflective layers forming the first plurality of light emitting structures P11, P12, P13, ... may be disposed to be spaced apart from each other. In addition, the second conductive type reflective layers forming the first plurality of light emitting structures P11, P12, P13, ... may be electrically connected to each other.

In addition, the semiconductor device 200 according to the embodiment includes a plurality of second light emitting structures P21, P22, P23, ... disposed in the second region, as shown in FIGS. 1, 4, and 5. Can include. The second plurality of light emitting structures P21, P22, P23, ... may be disposed under the second bonding pad 165. The second plurality of light emitting structures P21, P22, P23, ... may be disposed to be spaced apart from each other.

The second plurality of light emitting structures P21, P22, P23, ... may each include a first conductive type reflective layer, an active layer disposed on the first conductive type reflective layer, and a second conductive type reflective layer disposed on the active layer.

The first conductive type reflective layer of the second plurality of light emitting structures P21, P22, P23, ... may be referred to as a lower reflective layer. In addition, the second conductive type reflective layer of the plurality of second light emitting structures P21, P22, P23, ... may be referred to as an upper reflective layer.

In this case, the first conductive type reflective layers forming the second plurality of light emitting structures P21, P22, P23, ... may be electrically connected to each other. In addition, the first conductive type reflective layers constituting the plurality of second light emitting structures P21, P22, P23, ... may be physically connected to each other to be provided.

In addition, the first conductive type reflective layers constituting the second plurality of light emitting structures P21, P22, P23, ... are first conductive type reflective layers constituting the first plurality of light emitting structures P11, P12, P13, ... And can be electrically connected. The first conductive type reflective layers constituting the second plurality of light emitting structures (P21, P22, P23, ...) are mutually formed with the first conductive type reflective layers constituting the first plurality of light emitting structures (P11, P12, P13, ...). It can be physically connected and provided.

The active layers constituting the second plurality of light emitting structures P21, P22, P23, ... may be disposed to be spaced apart from each other. In addition, the active layers constituting the second plurality of light-emitting structures P21, P22, P23, ... may be disposed to be spaced apart from the active layers constituting the first plurality of light-emitting structures P11, P12, P13, ... .

The second conductive type reflective layers forming the second plurality of light emitting structures P21, P22, P23, ... may be disposed to be spaced apart from each other. In addition, the second conductive type reflective layers constituting the plurality of second light emitting structures P21, P22, P23, ... may be electrically connected to each other.

In addition, the second conductive type reflective layers constituting the second plurality of light emitting structures P21, P22, P23, ... are second conductive type reflective layers constituting the first plurality of light emitting structures P11, P12, P13, ... And can be arranged spaced apart from each other. The second conductive type reflective layers constituting the second plurality of light emitting structures P21, P22, P23, ... are mutually formed with the second conductive type reflective layers constituting the first plurality of light emitting structures P11, P12, P13, ... Can be electrically connected.

The first bonding pad 155 and the second bonding pad 165 may be disposed to be spaced apart from each other. The first bonding pad 155 may be electrically connected to the first electrode 150. The first electrode 150 may be disposed under the first bonding pad 155.

For example, the lower surface of the first bonding pad 155 may be disposed in direct contact with the upper surface of the first electrode 150. The first electrode 150 may be electrically connected to a first conductive type reflective layer of the first plurality of light emitting structures P11, P12, P13, …. In addition, the first electrode 150 may be electrically connected to a first conductivity type reflective layer of the second plurality of light emitting structures P21, P22, P23, ...).

The second bonding pad 165 may be electrically connected to the second electrode 160. The second electrode 160 may be disposed under the second bonding pad 165.

For example, the lower surface of the second bonding pad 165 may be disposed in direct contact with the upper surface of the second electrode 160. The second electrode 160 may be electrically connected to a second conductive type reflective layer of the second plurality of light emitting structures P21, P22, P23, .... In addition, the second electrode 160 may be electrically connected to the second conductive type reflective layer of the first plurality of light emitting structures P11, P12, P13, ....

According to an embodiment, the first electrode 150 may be disposed both under the first bonding pad 155 and under the second bonding pad 165. The first electrode 150 may be electrically connected to the first bonding pad 155 in a region where the first bonding pad 155 is disposed. The first electrode 150 may be electrically insulated from the second bonding pad 165.

In addition, the second electrode 160 may be disposed both under the first bonding pad 155 and under the second bonding pad 165. The second electrode 160 may be electrically connected to the second bonding pad 165 in a region where the second bonding pad 165 is disposed. The second electrode 160 may be electrically insulated from the first bonding pad 155.

The electrical connection relationship between the first electrode 150 and the first bonding pad 155 and the electrical connection relationship between the second electrode 160 and the second bonding pad 165 will be described later.

Then, with reference to FIGS. 2 and 3, the structure of the semiconductor device 200 according to the embodiment will be further described based on the first light emitting structure P11 disposed under the first bonding pad 155. . 3 is a cross-sectional view taken along line A-A of the semiconductor device 200 according to the embodiment illustrated in FIG. 2.

The semiconductor device 200 according to the embodiment may include a first light emitting structure P11 disposed under the first bonding pad 155 as shown in FIGS. 2 and 3.

The first light emitting structure P11 may include a first reflective layer 110a of a first conductivity type, a second reflective layer 120a of a second conductivity type, and a first active layer 115a. The first active layer 115a may be disposed between the first reflective layer 110a and the second reflective layer 120a. For example, the first active layer 115a may be disposed on the first reflective layer 110a, and the second reflective layer 120a may be disposed on the first active layer 115a. The first light emitting structure P11 may further include a first aperture layer 117a disposed between the first active layer 115a and the second reflective layer 120a.

In addition, a first conductive type reflective layer 113 may be disposed around the first reflective layer 110a of the first light emitting structure P11. The first conductivity type reflective layer 113 may be disposed around the first light emitting structure P11. For example, the first conductive type reflective layer 113 may be disposed between the first plurality of light emitting structures P11, P12, P13, ....

The lower reflective layers of the first plurality of light emitting structures P11, P12, P13, ... may be physically connected by the first conductive type reflective layer 113. For example, an upper surface of the first conductive type reflective layer 113 and an upper surface of the first reflective layer 110a may be disposed on the same horizontal surface. The upper surface of the first conductivity type reflective layer 113 and the upper surface of the lower reflective layers of the first plurality of light emitting structures P11, P12, P13, ... may be disposed on the same horizontal plane.

Next, referring to FIGS. 4 and 5, the structure of the semiconductor device 200 according to the embodiment will be further described based on the second light emitting structure P21 disposed under the second bonding pad 165. do. 5 is a cross-sectional view taken along line B-B of the semiconductor device 200 according to the embodiment illustrated in FIG. 4.

The semiconductor device 200 according to the embodiment may include a second light emitting structure P21 disposed under the second bonding pad 165 as shown in FIGS. 4 and 5.

The second light emitting structure P21 may include a third reflective layer 110b of a first conductivity type, a fourth reflective layer 120b of a second conductivity type, and a second active layer 115b. The second active layer 115b may be disposed between the third reflective layer 110b and the fourth reflective layer 120b. For example, the second active layer 115b may be disposed on the third reflective layer 110b, and the fourth reflective layer 120b may be disposed on the second active layer 115b. The second light emitting structure P21 may further include a second aperture layer 117b disposed between the second active layer 115b and the fourth reflective layer 120b.

In addition, a first conductivity type reflective layer 113 may be disposed around the third reflective layer 110b of the second light emitting structure P21. The first conductivity type reflective layer 113 may be disposed around the second light emitting structure P21. For example, the first conductive type reflective layer 113 may be disposed between the second plurality of light emitting structures P21, P22, P23, ....

The lower reflective layers of the second plurality of light emitting structures P21, P22, P23, ... may be physically connected by the first conductive type reflective layer 113. For example, an upper surface of the first conductive type reflective layer 113 and an upper surface of the third reflective layer 110b may be disposed on the same horizontal surface. An upper surface of the first conductive type reflective layer 113 and an upper surface of the lower reflective layer of the second plurality of light emitting structures P21, P22, P23, ... may be disposed on the same horizontal plane.

In addition, the semiconductor device 200 according to the embodiment may include a first insulating layer 141 as illustrated in FIGS. 3 and 5.

The first insulating layer 141 is not shown in FIGS. 1, 2, and 4 in order to reduce the complexity of the drawing and to aid understanding of the structure. Meanwhile, according to the semiconductor device 200 according to another embodiment, the first insulating layer 141 may be omitted.

The first insulating layer 141 may be disposed on a side surface of the first light emitting structure P11. The first insulating layer 141 may be disposed to surround the circumference of a side surface of the first light emitting structure P11.

The first insulating layer 141 may be disposed on a side surface of an upper reflective layer of the first plurality of light emitting structures P11, P12, P13, …. The first insulating layer 141 may be disposed to surround side surfaces of the first plurality of light emitting structures P11, P12, P13, ….

The first insulating layer 141 may expose an upper surface of the first light emitting structure P11. The first insulating layer 141 may expose an upper surface of the second reflective layer 120a of the first light emitting structure P11.

The first insulating layer 141 may expose upper surfaces of the first plurality of light emitting structures P11, P12, P13, …. The first insulating layer 141 may expose an upper surface of the upper reflective layer of the first plurality of light emitting structures P11, P12, P13, ….

In addition, the first insulating layer 141 may be disposed on a side surface of the second light emitting structure P21. The first insulating layer 141 may be disposed to surround a circumference of a side surface of the second light emitting structure P21.

The first insulating layer 141 may be disposed on a side surface of an upper reflective layer of the second plurality of light emitting structures P21, P22, P23, …. The first insulating layer 141 may be disposed to surround side surfaces of the second plurality of light emitting structures P21, P22, P23, ....

The first insulating layer 141 may expose an upper surface of the second light emitting structure P21. The first insulating layer 141 may expose an upper surface of the fourth reflective layer 120b of the second light emitting structure P21.

The first insulating layer 141 may expose upper surfaces of the second plurality of light emitting structures P21, P22, P23, .... The first insulating layer 141 may expose an upper surface of the upper reflective layer of the second plurality of light emitting structures P21, P22, P23, ....

In addition, the semiconductor device 200 according to the embodiment may include a first electrode 150 as illustrated in FIGS. 1 to 5. The first electrode 150 may be disposed around the plurality of light emitting structures P11, P12, P13, P21, P22, P23, ...).

The first electrode 150 may be disposed around the first plurality of light emitting structures P11, P12, P13, .... The first electrode 150 may provide a plurality of first openings h1 exposing the first plurality of light emitting structures P11, P12, P13, .... The active layer and the upper reflective layer of the first plurality of light emitting structures P11, P12, P13, ... may be exposed through the plurality of first openings h1.

As another expression, the first electrode 150 is a plurality of exposing the second conductive type reflective layer of the first plurality of light emitting structures P11, P12, P13, ... under the first bonding pad 155 The first opening h1 of may be provided and may be electrically connected to the first conductive type reflective layer of the first plurality of light emitting structures P11, P12, P13, ....

In addition, the first electrode 150 may be disposed around the second plurality of light emitting structures P21, P22, P23, .... The first electrode 150 may provide a plurality of second openings h2 exposing the second plurality of light emitting structures P21, P22, P23, .... The active layer and the upper reflective layer of the second plurality of light emitting structures P21, P22, P23, ... may be exposed through the plurality of second openings h2.

As another expression, the first electrode 150 is a plurality of exposing the second conductive type reflective layer of the second plurality of light emitting structures P21, P22, P23, ... under the second bonding pad 165 A second opening h2 of may be provided and may be electrically connected to the first conductive type reflective layer of the second plurality of light emitting structures P21, P22, P23, ....

The first electrode 150 may be disposed on the first conductive type reflective layer 113. The first electrode 150 may be electrically connected to the first reflective layer 110a of the first light emitting structure P11. The first electrode 150 may be electrically connected to the third reflective layer 110b of the second light emitting structure P21.

The semiconductor device 200 according to the embodiment may include a second electrode 160 as illustrated in FIGS. 1 to 5. The second electrode 160 may be disposed on the plurality of light emitting structures P11, P12, P13, P21, P22, P23, ...). The second electrode 160 may be disposed under the first bonding pad 155 and under the second bonding pad 165.

The second electrode 160 may be disposed on the first plurality of light emitting structures P11, P12, P13, ..., as shown in FIGS. 2 and 3. The second electrode 160 may be disposed on the upper reflective layer of the first plurality of light emitting structures P11, P12, P13, …. The second electrode 160 may be disposed on the first electrode 150.

The second electrode 160 may be electrically connected to the second reflective layer 120a of the first light emitting structure P11. The second electrode 160 may include an upper electrode 160a and a connection electrode 160b.

The upper electrode 160a may be disposed in contact with an upper surface of an upper reflective layer of the first plurality of light emitting structures P11, P12, P13, .... The connection electrode 160b may be disposed on side surfaces and peripheries of the first plurality of light emitting structures P11, P12, P13, ... and electrically connected to the upper electrode 160a. The connection electrode 160b may electrically connect the upper electrode 160a disposed on the first plurality of light emitting structures P11, P12, P13, ....

The second electrode 160 may provide a third opening h3 exposing the first electrode 150 disposed around the first active layer 115a of the first light emitting structure P11. The upper surface of the first electrode 150 may be exposed through the third opening h3.

The second electrode 160 may be disposed on a side surface of the first light emitting structure P11. The second electrode 160 may be disposed on an upper surface of the first light emitting structure P11. The upper electrode 160a of the second electrode 160 may be disposed on the second reflective layer 120a of the first light emitting structure P11. The upper electrode 160a of the second electrode 160 may be disposed in direct contact with the upper surface of the second reflective layer 120a.

In addition, the second electrode 160 may be disposed on the second plurality of light emitting structures P21, P22, P23, ..., as shown in FIGS. 4 and 5. The second electrode 160 may be disposed on the upper reflective layer of the second plurality of light emitting structures P21, P22, P23, .... The second electrode 160 may be disposed on the first electrode 150.

The second electrode 160 may be electrically connected to the fourth reflective layer 120b of the second light emitting structure P21. The second electrode 160 may include an upper electrode 160a and a connection electrode 160b.

The upper electrode 160a may be disposed in contact with an upper surface of an upper reflective layer of the second plurality of light emitting structures P21, P22, P23, .... The connection electrode 160b may be disposed on side surfaces and peripheries of the second plurality of light emitting structures P21, P22, P23, ... and electrically connected to the upper electrode 160a. The connection electrode 160b may electrically connect the upper electrode 160a disposed on the second plurality of light emitting structures P21, P22, P23, ….

The second electrode 160 may be disposed on a side surface of the second light emitting structure P21. The second electrode 160 may be disposed on an upper surface of the second light emitting structure P21. The upper electrode 160a of the second electrode 160 may be disposed on the fourth reflective layer 120b of the second light emitting structure P21. The upper electrode 160a of the second electrode 160 may be disposed in direct contact with the upper surface of the fourth reflective layer 120b.

The semiconductor device 200 according to the embodiment may include a second insulating layer 142 as shown in FIGS. 2 to 5.

The second insulating layer 142 may be disposed between the first electrode 150 and the second electrode 160. The second insulating layer 142 may be disposed between an upper surface of the first electrode 150 and a lower surface of the second electrode 160. The second insulating layer 142 may electrically insulate the first electrode 150 and the second electrode 160.

The second insulating layer 142 may provide a plurality of openings under the first bonding pad 155 to expose upper surfaces of the first plurality of light emitting structures P11, P12, P13, .... The second insulating layer 142 includes a second conductive type reflective layer of the first plurality of light emitting structures P11, P12, P13, ... and the second electrode 160 under the first bonding pad 155. A plurality of electrically connected openings may be provided.

In addition, the second insulating layer 142 is an upper portion of the first electrode 150 disposed around the first plurality of light emitting structures P11, P12, P13, ... under the first bonding pad 155 It is possible to provide a plurality of openings exposing the surface. The second insulating layer 142 includes a first conductive type reflective layer of the first plurality of light emitting structures P11, P12, P13, ... and the first bonding pad 155 under the first bonding pad 155 May provide a plurality of openings electrically connected.

The second insulating layer 142 may provide a plurality of openings under the second bonding pad 165 to expose upper surfaces of the second plurality of light emitting structures P21, P22, P23, .... The second insulating layer 142 includes a second conductive type reflective layer of the second plurality of light emitting structures P21, P22, P23, ... and the second electrode 160 under the second bonding pad 165. A plurality of electrically connected openings may be provided.

In addition, according to the semiconductor device 200 according to the embodiment, by a plurality of openings provided in the second insulating layer 142 under the second bonding pad 165, the second plurality of light emitting structures P21, The second conductive type reflective layer of P22, P23, ...) and the second bonding pad 165 may be electrically connected.

The semiconductor device 200 according to the embodiment may include a third insulating layer 143 as illustrated in FIGS. 1 to 5.

The third insulating layer 143 may be disposed under the first bonding pad 155 and under the second bonding pad 165. The third insulating layer 143 may be disposed on the second electrode 160 under the first bonding pad 155. In addition, the third insulating layer 143 may be disposed on the second electrode 160 under the second bonding pad 165.

The third insulating layer 143 may be disposed on the upper electrode 160a of the second electrode 160 under the first bonding pad 155, as shown in FIGS. 2 and 3. The third insulating layer 143 may provide a plurality of fourth openings h4 under the first bonding pad 155 to expose the first electrode 150. For example, the fourth opening h4 may be provided in a region in which the third opening h3 is formed.

The third insulating layer 143 includes a plurality of fourths electrically connected to the first bonding pad 155 and the first electrode 150 in a first area where the first bonding pad 155 is disposed. An opening h4 can be provided.

According to an embodiment, an area of the fourth opening h4 may be provided smaller than an area of the first active layer 115a. An area of the fourth opening h4 may be provided smaller than an area of the second reflective layer 120a.

In addition, according to an embodiment, an area of the third opening h3 may be provided larger than an area of the fourth opening h4. An area of the third opening h3 may be provided smaller than an area of the first active layer 115a. An area of the third opening h3 may be provided smaller than an area of the second reflective layer 120a.

The fourth opening h4 may be provided in a region surrounded by three light emitting structures among the first plurality of light emitting structures P11, P12, P13, .... For example, one of the fourth openings h4 may be provided in a space surrounded by the light emitting structures P11, P12, and P13.

For example, a distance from the center of the fourth opening h4 to the center of the P11 light emitting structure and the distance to the center of the P12 light emitting structure may be similarly provided. Also, a distance from the center of the fourth opening h4 to the center of the P11 light emitting structure and the distance to the center of the P13 light emitting structure may be similarly provided.

In addition, three fourth openings h4 may be provided around the first light emitting structure P11. For example, a distance from the center of the first light emitting structure P11 to the center of the three fourth openings h4 disposed adjacent to each other may be provided similarly to each other.

The third insulating layer 143 may be disposed on the upper electrode 160a of the second electrode 160 under the second bonding pad 165, as shown in FIGS. 4 and 5. The third insulating layer 143 may provide a plurality of fifth openings h5 under the second bonding pad 165 to expose the second electrode 160. The third insulating layer 143 may provide a fifth opening h5 exposing an upper surface of the connection electrode 160b of the second electrode 160 under the second bonding pad 165.

The third insulating layer 143 may provide a fifth opening h5 exposing the second electrode 160 disposed around the second active layer 115b of the second light emitting structure P21. The third insulating layer 143 is a fifth opening h5 exposing the connection electrode 160b of the second electrode 160 disposed around the fourth reflective layer 120b of the second light emitting structure P21 Can provide. The upper surface of the second electrode 160 may be exposed through the fifth opening h5.

The third insulating layer 143 includes a plurality of fifths electrically connected to the second bonding pad 165 and the second electrode 160 in a second region in which the second bonding pad 165 is disposed. An opening h5 may be provided.

According to an embodiment, an area of the fifth opening h5 may be provided smaller than an area of the second active layer 115b. An area of the fifth opening h5 may be provided smaller than an area of the fourth reflective layer 120b.

The fifth opening h5 may be provided in a region surrounded by three light emitting structures among the second plurality of light emitting structures P21, P22, P23, .... For example, one of the fifth openings h5 may be provided in a space surrounded by the light emitting structures P21, P22, and P23.

For example, a distance from the center of the fifth opening h5 to the center of the P21 light emitting structure and the distance to the center of the P22 light emitting structure may be similarly provided. Also, a distance from the center of the fifth opening h5 to the center of the P21 light emitting structure and the distance to the center of the P23 light emitting structure may be similarly provided.

In addition, three fifth openings h5 may be provided around the second light emitting structure P21. For example, a distance from the center of the second light emitting structure P21 to the center of the three fifth openings 54 disposed adjacent to each other may be provided similarly to each other.

According to an embodiment, as shown in FIGS. 1 to 5, a first bonding pad 155 and a second bonding pad 165 may be included. The first bonding pad 155 and the second bonding pad 165 may be disposed to be spaced apart from each other.

The first bonding pad 155 may be electrically connected to the first electrode 150 through an area provided with the fourth opening h4. The lower surface of the first bonding pad 155 may contact the upper surface of the first electrode 150 through the fourth opening h4.

In addition, the second bonding pad 165 may be electrically connected to the second electrode 160 through an area in which the fifth opening h5 is provided. The lower surface of the second bonding pad 165 may contact the upper surface of the second electrode 160 through the fifth opening h5. The lower surface of the second bonding pad 165 may contact the upper surface of the connection electrode 160b of the second electrode 160 through the fifth opening h5.

Meanwhile, according to the semiconductor device 200 according to the embodiment, as shown in FIG. 1, the third insulating layer 143 includes a plurality of fourth openings h4 provided under the first bonding pad 155. It may include. In this case, as an example, the plurality of fourth openings h4 may be provided by being arranged in a plurality of rows under the first bonding pad 155.

Meanwhile, according to the semiconductor device 200 according to the embodiment, as shown in FIG. 1, the third insulating layer 143 includes a plurality of fifth openings h5 provided under the second bonding pad 165. It may include.

In this case, as an example, the plurality of fifth openings h5 may be provided in a plurality of rows under the second bonding pad 165.

Meanwhile, according to the semiconductor device 200 according to the embodiment, as shown in FIGS. 1 to 3, the lower surface of the first bonding pad 155 and the first electrode through the fourth opening h4 The upper surface of 150 may be in contact. At this time, the upper surface area of the first electrode 150 in contact with the lower surface of the first bonding pad 155 through the fourth opening h4 is in a space surrounded by the light emitting structures P11, P12, and P13. Can be provided.

According to an embodiment, the area of the upper surface area of the first electrode 150 in contact with the lower surface of the first bonding pad 155 through the fourth opening h4 is of the first active layer 115a. It may be provided smaller than the top surface area.

In addition, according to the semiconductor device 200 according to the embodiment, as shown in FIGS. 1, 4, and 5, the lower surface of the second bonding pad 165 and the lower surface of the second bonding pad 165 through the fifth opening h5 The upper surface of the second electrode 160 may be in contact. At this time, the upper surface area of the second electrode 160 in contact with the lower surface of the second bonding pad 165 through the fifth opening h5 is in the space surrounded by the P21, P22, and P23 light emitting structures. Can be provided.

According to an embodiment, the area of the upper surface area of the second electrode 160 in contact with the lower surface of the second bonding pad 165 through the fifth opening h5 is of the second active layer 115b. It may be provided smaller than the top surface area.

Meanwhile, FIG. 6 is a diagram illustrating a contact area between a bonding pad and an electrode in a semiconductor device according to an exemplary embodiment of the present invention. In describing the semiconductor device 200 according to the embodiment with reference to FIG. 6, descriptions of items overlapping with those described with reference to FIGS. 1 to 5 may be omitted.

For example, in the semiconductor device 200 according to the embodiment, as shown in FIG. 6, each light emitting structure may be provided with a diameter of “d”, and the distance between the light emitting structure and the light emitting structure is “l”. It may be provided, and the fourth opening h4 may be provided with a diameter of “D”.

The diameter of the light emitting structure may be provided in tens of micrometers, for example. For example, when the diameter of the light emitting structure is 30 micrometers, the distance between the neighboring light emitting structures may be designed to be larger than 50 micrometers.

At this time, the distance between the adjacent light emitting structures is provided larger than 50 micrometers, and the fourth opening h4 through which the first bonding pad 155 and the first electrode 150 can be contacted is P11, P12, It may be provided in a space surrounded by a P13 light emitting structure.

According to the embodiment, in the case of a semiconductor device to which a high current is applied, a larger gap between light emitting structures may exhibit better characteristics. For example, in a semiconductor device to which a high current of 5 amps or more is applied, light emission characteristics may be deteriorated due to a heat generation problem in the light emitting structure. Therefore, by arranging the spacing between the light-emitting structures to be slightly larger, it is possible to reduce deterioration of light-emitting characteristics due to heat generated from the light-emitting structures.

As described above, according to the embodiment, by designing a relatively large distance between the light emitting structures, a sufficient space may be provided between the light emitting structures in which the fourth opening h4 can be formed. In addition, current injection can be smoothly performed by electrical contact between the first bonding pad 155 and the first electrode 150 through the fourth opening h4.

The design items described above with reference to the first bonding pad 155 and the fourth opening h4 with reference to FIG. 6 may be equally applied to the second bonding pad 165 and the fifth opening h5. .

According to the embodiment, by designing a relatively large distance between the light emitting structures, a sufficient space may be provided in which the fifth opening h5 can be formed between the light emitting structures. In addition, current injection can be smoothly performed by electrical contact between the second bonding pad 165 and the second electrode 160 through the fifth opening h5.

Next, with reference to FIGS. 7 and 8, the effect of the semiconductor device according to the embodiment will be further described as compared to the conventional semiconductor device.

7 is a diagram illustrating an example of a conventional semiconductor device, and FIG. 8 is a diagram illustrating light emission characteristics of the semiconductor device shown in FIG. 7.

A conventional semiconductor device may include a light emitting structure 1110, a first electrode 1125, and a second electrode 1160. The light emitting structure 1110 may include a lower reflective layer 1111, an active layer 1113, an aperture layer 1114, and an upper reflective layer 1115. In this case, the reflectance of the upper reflective layer 1115 is provided lower than that of the lower reflective layer 1111, and light generated from the active layer 1113 may be extracted upward through the upper reflective layer 1115.

In addition, a conventional semiconductor device may include a conductive layer 1140 disposed on the light emitting structure 1110. The conductive layer 1140 may be electrically connected to the second electrode 1160. A conventional semiconductor device may include an insulating layer 1130 disposed on the light emitting structure 1110.

The light emitting structure 1110 may be provided on the substrate 1120. A plurality of light emitting structures 1110 may be disposed on the substrate 1120. In addition, the first electrode 1125 may be disposed under the substrate 1120.

In a conventional semiconductor device, power is supplied through the first electrode 1125 and the second electrode 1160, so the substrate 1120 must be conductive. The substrate 1120 may include, for example, a conductive semiconductor substrate.

When power is supplied to the plurality of light emitting structures 1110 through the first electrode 1125 and the second electrode 1160, light is transmitted from the plurality of light emitting structures 1110 as shown in FIG. Can be emitted in any direction. In this case, the first electrode 1135 may be disposed under the substrate 1120 and electrically connected to an external sub-mount, for example. In addition, the second electrode 1160 may be electrically connected to an electrode pad 1170 disposed at one end of the semiconductor device.

However, according to the conventional semiconductor device, as can be seen in FIG. 8, in a first region R1 close to the electrode pad 1170 and a second region R2 relatively far from the electrode pad 1170. It can be seen that there is a difference in the intensity of light emission.

It is interpreted that this is because the diffusion of the current provided through the second electrode 1160 to the light emitting structure in a region far from the electrode pad 1170 is not smooth.

As an example, the semiconductor device shown in FIG. 8 is provided in a size of 1300 micrometers * 1100 micrometers, and the light intensity of the light emitting structure 1110 disposed at a distance of approximately 600 micrometers or more from the electrode pad 1170 is It can be seen that it is degraded. This phenomenon is known to occur even when the second electrode 1160 is provided with a thickness of several micrometers, for example a sufficient thickness of 3 micrometers. It is interpreted that this is because the amount of current flowing due to an increase in resistance decreases in a light emitting structure disposed at a predetermined distance or more from the electrode pad 1170 in a conventional semiconductor device.

However, according to the semiconductor device 200 according to the embodiment, power may be supplied through the first bonding pad 155 and the second bonding pad 165 in a flip-chip manner as described above, so that the semiconductor device ( The current can be smoothly diffused and supplied to the light emitting structure disposed in the entire area of 200). Accordingly, according to the semiconductor device 200 according to the embodiment, light can be efficiently and uniformly emitted from a plurality of light emitting structures disposed over the entire area.

Meanwhile, the semiconductor device 200 according to the embodiment may further include a substrate 105 as shown in FIGS. 1 to 5. A plurality of light emitting structures P11, P12, P13, P21, P22, P23, ... may be disposed on the substrate 105. For example, the substrate 105 may be a growth substrate on which the plurality of light emitting structures P11, P12, P13, P21, P22, P23, ... can be grown. For example, the substrate 105 may be an intrinsic semiconductor substrate.

According to the semiconductor device 200 according to the embodiment, the plurality of light emitting structures P11, P12, P13, P21, P22, P23, ... through the first bonding pad 155 and the second bonding pad 165. ) Can be supplied with power. In addition, the first electrode 150 may be disposed on an upper surface of the first conductive type reflective layer of the plurality of light emitting structures P11, P12, P13, P21, P22, P23, ...). In addition, the second electrode 160 may be disposed on an upper surface of the second conductive type reflective layer of the plurality of light emitting structures P11, P12, P13, P21, P22, P23, ...).

Therefore, according to the embodiment, since power is provided to the plurality of light emitting structures (P11, P12, P13, P21, P22, P23, ...), it is necessary to apply power through the lower surface of the substrate 105. none. In a conventional semiconductor device, when power is to be applied through the lower surface of the substrate 105, the substrate 105 must be provided as a conductive substrate. However, according to the semiconductor device 200 according to the embodiment, the substrate 105 may be a conductive substrate or an insulating substrate. For example, the substrate 105 according to the embodiment may be provided as an intrinsic semiconductor substrate.

In addition, after the plurality of light emitting structures (P11, P12, P13, P21, P22, P23, ...) are grown on the growth substrate, the substrate 105 is removed, and the plurality of light emitting structures (P11, P12). , P13, P21, P22, P23, ...) may be a support substrate attached to.

Meanwhile, the semiconductor device 200 according to the embodiment may be implemented to emit light in a downward direction of the semiconductor device 200 as shown in FIGS. 1 to 5. According to an embodiment, the reflectance of the lower reflective layer of the semiconductor device 200 may be provided smaller than that of the upper reflective layer.

That is, according to the semiconductor device 200 according to the embodiment, light may be emitted from the active layer forming the plurality of light emitting structures P11, P12, P13, P21, P22, P23, ... in the direction in which the lower reflective layer is disposed. have. Light may be emitted from the active layer constituting the plurality of light emitting structures P11, P12, P13, P21, P22, P23, ... in the direction in which the substrate 105 is disposed.

According to an embodiment, the second electrode 160 is disposed on an upper surface of the second conductive type reflective layer of the plurality of light emitting structures P11, P12, P13, P21, P22, P23, ..., and the second electrode The second bonding pad 165 is disposed on the 160 in contact with each other. In addition, the first electrode 150 is disposed on an upper surface of the first conductive type reflective layer of the plurality of light emitting structures P11, P12, P13, P21, P22, P23, ..., and the first electrode 150 The first bonding pad 155 is disposed in contact with the above.

Accordingly, heat generated from the plurality of light emitting structures (P11, P12, P13, P21, P22, P23, ...) through the first bonding pad 155 and the second bonding pad 165 is effectively transferred to the outside. Can be released.

Meanwhile, in the case of a general semiconductor device, it is known that power conversion efficiency (PCE) is greatly reduced due to heat generated from a light emitting structure. In addition, when power is supplied to the light emitting structure through a substrate disposed below, heat is generally radiated through the substrate.

However, since the substrate has a low thermal conductivity, it is difficult to dissipate heat generated from the light emitting structure to the outside. For example, in the case of a GaAs substrate, it is known that the thermal conductivity is as low as 52W/(m*K).

However, according to the embodiment, since the first bonding pad 155 and the second bonding pad 165 may be connected to an external heat dissipating substrate, the plurality of light emitting structures P11, P12, P13, P21, P22, It is possible to effectively dissipate the heat generated by P23, …) to the outside. Accordingly, according to the embodiment, since heat generated by the semiconductor device 200 can be effectively discharged to the outside, the power change efficiency (PCE) can be improved.

Meanwhile, according to the semiconductor device 200 according to the embodiment, as described above, it may be implemented to emit light in a downward direction of the semiconductor device 200. According to the semiconductor device 200 according to the embodiment, the reflectance of the first conductive type reflective layer provided in the lower region of the plurality of light emitting structures P11, P12, P13, P21, P22, P23, ... It was chosen to be smaller compared to the reflectance of the two-conductivity reflective layer. Accordingly, light generated from the plurality of light emitting structures P11, P12, P13, P21, P22, P23, ... can be emitted toward the substrate 105 of the semiconductor device 200.

In addition, according to the semiconductor device 200 according to the embodiment, the second insulating layer 142 may be provided as a DBR layer. According to the semiconductor device 200 according to the embodiment, the third insulating layer 143 may be provided as a DBR layer. According to an embodiment, at least one of the second insulating layer 142 and the third insulating layer 143 may be provided as a DBR layer. Accordingly, the light generated from the plurality of light emitting structures (P11, P12, P13, P21, P22, P23, ...) is disposed on the second insulating layer 142 and the third insulating layer 143 It is reflected and can be effectively extracted downward.

For example, at least one of the second insulating layer 142 and the third insulating layer 143 may be provided as a DBR layer formed by stacking _{SiO 2} and TiO _{2 in a plurality of layers.} In addition, at least one of the second insulating layer 142 and the third insulating layer 143 may be provided as a DBR layer formed by stacking _{Ta 2} O ₃ and SiO _{2 in a plurality of layers.} In addition, at least one of the second insulating layer 142 and the third insulating layer 143 may be provided as a DBR layer formed by stacking _{SiO 2} and Si ₃ N _{4 in a plurality of layers.}

In addition, according to the semiconductor device 200 according to the embodiment, at least one of the second insulating layer 142 and the third insulating layer 143 may include a spin on glass (SOG) layer. For example, according to the semiconductor device 200 according to the embodiment, at least one of the second insulating layer 142 and the third insulating layer 143 may include a plurality of insulating layers including an SOG layer. have.

When the second insulating layer 142 or the third insulating layer 143 includes an SOG layer, a problem due to a step difference in a region around the light emitting structure of the semiconductor device 200 may be solved. A step may be generated between a region in which an upper reflective layer is provided and a region in which the upper reflective layer is not provided around the light emitting structure of the semiconductor device 200.

At this time, if the step is formed large around the light emitting structure of the semiconductor device 200, the thickness of the second insulating layer 142 or the third insulating layer 143 is not formed uniformly in the stepped region, but partially pits ( pit) can be formed. In addition, when a pit is formed in the second insulating layer 142 or the third insulating layer 143, the insulating property is deteriorated, and an electrical short between the first electrode 150 and the second electrode 160 ( short) or an electrical short between the first bonding pad 155 and the second bonding pad 165 may occur.

However, according to the semiconductor device 200 according to the embodiment, by making the second insulating layer 142 or the third insulating layer 143 include an SOG layer, the second insulating layer 142 or the second insulating layer 142 3 It is possible to prevent a pit from being formed in the insulating layer 143. Accordingly, according to an embodiment, an electrical short between the first electrode 150 and the second electrode 160 and an electrical short between the first bonding pad 155 and the second bonding pad 165 are It can be prevented from occurring.

On the other hand, when power is supplied to a light emitting structure through a substrate in a conventional semiconductor device, the substrate must be conductive. Accordingly, when a conductive semiconductor substrate is applied, a dopant is added to the substrate to improve conductivity. However, since the dopant added to the substrate causes absorption and scattering of emitted light, it may cause a decrease in power conversion efficiency (PCE).

However, according to the semiconductor device 200 according to the embodiment, as described above, since the substrate 105 does not have to be a conductive substrate, a separate dopant does not need to be added to the substrate 105. Accordingly, since the dopant does not need to be added to the substrate 105 according to the exemplary embodiment, absorption and scattering caused by the dopant in the substrate 105 can be reduced. Therefore, according to the embodiment, light generated from a plurality of light emitting structures (P11, P12, P13, P21, P22, P23, ...) can be effectively provided downward, and power conversion efficiency (PCE) will be improved. You will be able to.

In addition, the semiconductor device 200 according to the embodiment may further include an anti-reflective layer provided on the lower surface of the substrate 105. The anti-reflective layer prevents light emitted from the semiconductor device 200 from being reflected from the surface of the substrate 105 and transmits it, thereby improving light loss due to reflection.

Then, a method of manufacturing a semiconductor device according to an embodiment of the present invention will be described with reference to the drawings. In describing a method of manufacturing a semiconductor device according to an exemplary embodiment, descriptions of matters overlapping with those described with reference to FIGS. 1 to 6 may be omitted.

First, FIGS. 9A to 9C are views showing an example in which a light emitting structure is formed in a method of manufacturing a semiconductor device according to an embodiment of the present invention. 9A is a plan view showing a step in which a light emitting structure is formed according to a method of manufacturing a semiconductor device according to the embodiment, FIG. 9B is a cross-sectional view taken along line AA of the semiconductor device according to the embodiment shown in FIG. A cross-sectional view taken along line BB of the semiconductor device according to the embodiment shown in FIG.

According to the method of manufacturing a semiconductor device according to the embodiment, as shown in FIGS. 9A to 9C, a plurality of light emitting structures P11, P12, P21, P22, ... may be formed on the substrate 105.

The substrate 105 may be any one selected from an intrinsic semiconductor substrate, a conductive substrate, and an insulating substrate. For example, the substrate 105 may be a GaAs intrinsic semiconductor substrate. In addition, the substrate 105 is copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), copper-tungsten (Cu-W), a carrier wafer (e.g., Si, Ge, AlN, GaAs, ZnO, SiC, etc.) may be provided with at least one selected from among conductive materials.

For example, a first conductive type reflective layer, an active layer, and a second conductive type reflective layer may be sequentially formed on the substrate 105. In addition, the plurality of light emitting structures P11, P12, P13, P21, P22, P23,… may be formed through mesa etching of the second conductive type reflective layer and the active layer.

The plurality of light emitting structures (P11, P21, ...) includes a first conductive type reflective layer (110a, 110b, ...), an active layer (115a, 115b, ...), an aperture layer (117a, 117b, ...), a second conductive type reflective layer. (120a, 120b, …) may be included. A first conductivity type reflective layer 113 may be provided around the plurality of light emitting structures P11, P12, P21, P22, .... The first conductivity type reflective layer 113 may be disposed in a region between the plurality of light emitting structures P11, P12, P21, P22, ...).

For example, the plurality of light emitting structures P11, P12, P21, P22, ... may be grown as a plurality of compound semiconductor layers. The plurality of light emitting structures (P11, P12, P21, P22, ...) are electron beam evaporator, PVD (physical vapor deposition), CVD (chemical vapor deposition), PLD (plasma laser deposition), dual-type thermal evaporator (dual-type thermal It may be formed by evaporator sputtering, metal organic chemical vapor deposition (MOCVD), or the like.

The first conductive type reflective layers 110a, 110b,… forming the plurality of light emitting structures P11, P21,… are a compound of Group 3-5 or Group 2-6 doped with a first conductivity type dopant It may be provided with at least one of semiconductors. For example, the first conductivity type reflective layers 110a, 110b, ... may be one of a group including GaAs, GaAl, InP, InAs, and GaP. The first conductivity type reflective layers 110a, 110b, ... are provided as semiconductor materials having a composition formula of, for example, AlxGa1-xAs(0<x<1)/AlyGa1-yAs(0<y<1)(y<x). Can be. The first conductivity-type reflective layers 110a, 110b, ... may be n-type semiconductor layers doped with an n-type dopant such as Si, Ge, Sn, Se, and Te. The first conductivity-type reflective layers 110a, 110b, ... may be DBR layers having a thickness of λ/4n by alternately disposing different semiconductor layers.

The active layers 115a, 115b, ... forming the plurality of light emitting structures P11, P21, ... may be provided with at least one of a group 3-5 or a group 2-6 compound semiconductor. For example, the active layers 115a, 115b, ... may be one of a group including GaAs, GaAl, InP, InAs, and GaP. When the active layers 115a, 115b,… are implemented in a multi-well structure, the active layers 115a, 115b,… may include a plurality of well layers and a plurality of barrier layers alternately disposed. The plurality of well layers may be formed of, for example, a semiconductor material having a composition formula of InpGa1-pAs (0≦p≦1). The barrier layer may be formed of, for example, a semiconductor material having a composition formula of InqGa1-qAs (0≦q≦1).

The aperture layers 117a, 117b,… forming the plurality of light emitting structures P11, P21,… may be disposed on the active layers 115a, 115b, …. The aperture layers 117a, 117b, ... may include a circular opening in the center. The aperture layers 117a, 117b,… may include a function of limiting current movement so that current is concentrated to the center of the active layers 115a, 115b, …. That is, the aperture layers 117a, 117b,… may adjust the resonance wavelength and the beam angle emitted from the active layers 115a, 115b,… in the vertical direction may be adjusted. The aperture layers 117a, 117b, ... may include an insulating material such as SiO2 or Al2O3. In addition, the aperture layer (117a, 117b, ...) is higher than the active layer (115a, 115b, ...), the first conductivity type reflective layer (110a, 110b, ...) and the second conductivity type reflective layer (120a, 120b, ...) It may have a band gap energy.

The second conductive type reflective layers 120a, 120b,… forming the plurality of light emitting structures P11, P21,… are a compound of Group 3-5 or Group 2-6 doped with a dopant of a second conductivity type It may be provided with at least one of semiconductors. For example, the second conductivity-type reflective layers 120a, 120b, ... may be one of a group including GaAs, GaAl, InP, InAs, and GaP. The second conductivity-type reflective layers 120a, 120b, ... are formed of, for example, a semiconductor material having a composition formula of AlxGa1-xAs(0<x<1)/AlyGa1-yAs(0<y<1)(y<x). Can be. The second conductivity-type reflective layers 120a, 120b, ... may be a p-type semiconductor layer having a p-type dopant such as a second conductivity-type dopant, for example, Mg, Zn, Ca, Sr, Ba. The second conductive reflective layers 120a, 120b, ... may be DBR layers having a thickness of λ/4n by alternately disposing different semiconductor layers.

For example, the second conductive type reflective layers 120a, 120b, ... may have higher reflectance than the first conductive type reflective layers 110a, 110b, .... For example, the second conductive reflective layers 120a, 120b, ... and the first conductive reflective layers 110a, 110b, ... may form a resonance cavity in a vertical direction with a reflectance of 90% or more. In this case, the generated light may be emitted to the outside through the first conductive type reflective layers 110a, 110b, ... which are lower than the reflectance of the second conductive type reflective layers 120a, 120b, ....

Next, as shown in FIGS. 10A to 10C, the first electrode 150 may be formed.

10A to 10C are diagrams illustrating an example in which a first electrode is formed in a method of manufacturing a semiconductor device according to an exemplary embodiment of the present invention. 10A is a plan view showing a shape of a first electrode provided according to a method of manufacturing a semiconductor device according to the embodiment, FIG. 10B is a cross-sectional view taken along line AA of the semiconductor device according to the embodiment shown in FIG. 10A, and FIG. A cross-sectional view taken along line BB of the semiconductor device according to the embodiment illustrated in 10A.

According to an embodiment, as shown in FIGS. 10A to 10C, the first electrode 150 may be formed around the plurality of light emitting structures P11, P12, P21, P22, ....

The first electrode 150 is formed on the first conductive type reflective layer 113 and may include a plurality of first openings h1 exposing the first plurality of light emitting structures P11, P12, ... have. The first electrode 150 may be formed in a region between the first plurality of light emitting structures P11, P12, ....

In addition, the first electrode 150 is formed on the first conductive type reflective layer 113 and includes a plurality of second openings h2 exposing the second plurality of light emitting structures P21, P22, ... can do. The first electrode 150 may be formed in a region between the second plurality of light emitting structures P21, P22, ....

Meanwhile, according to an embodiment, before the first electrode 150 is formed, a first insulating layer 141 may be further formed on the side surfaces of the plurality of light emitting structures P11, P12, P21, P22, .... The first insulating layer 141 may be formed on upper and side surfaces of the plurality of light emitting structures P11, P12, P21, P22, ...). The first insulating layer 141 may electrically insulate the first electrode 150 from the active layer and the upper reflective layer of the plurality of light emitting structures P11, P12, P21, P22, ...).

According to another embodiment, since the first electrode 150 is spaced apart from the side surfaces of the plurality of light emitting structures P11, P12, P21, P22, ..., the first electrode 150 and the plurality of light emission When the electrical insulating properties between the active layer and the upper reflective layer of the structures P11, P12, P21, P22, ... are stably secured, the first insulating layer 141 may not be formed and may be omitted.

In addition, the area An of the first electrode 150 may be provided larger than the area Am of the plurality of light emitting structures P11, P12, P21, P22, ...). Here, the area (Am) of the plurality of light emitting structures P11, P12, P21, P22, ... may represent the area of the active layers 115a, 115b, ... remaining without being etched by mesa etching. The area (Am) ratio (Am/An) of the plurality of light emitting structures (P11, P12, P21, P22, ...) to the area (An) of the first electrode 150 is, for example, greater than 25% Can be provided. According to the semiconductor device 200 according to the embodiment, the number and diameter of the plurality of light emitting structures P11, P12, P21, P22, ... may be variously modified according to an application example.

According to an embodiment, the ratio (Am/An) of the area (Am) of the plurality of light emitting structures (P11, P12, P21, P22, ...) to the area (An) of the first electrode 150 is 25 as an example. % To 70%. According to another embodiment, the ratio (Am/Ae) of the area (Am) of the plurality of light emitting structures (P11, P12, P21, P22, ...) to the area (An) of the first electrode 150 is as an example It can be provided in 30% to 60%.

Depending on the application example of the semiconductor device 200 according to the embodiment, the number and diameter of the plurality of light emitting structures P11, P12, P21, P22,… disposed on the semiconductor device 200 may be variously changed. have. The following [Table 1] shows data for a semiconductor device provided with 621 light emitting structures as an example. In [Table 1], “Ap” indicates the area of the second electrode 160, and “At” indicates the total area of the semiconductor device 200.

Light-emitting structure diameter (㎛) 30 Am (㎛ ² ) 440,000 An (㎛ ² ) 790,000 Am/An (%) 55.7 Ap (㎛ ² ) 1,460,000 At (㎛ ² ) 1,690,000

As an example, the first electrode 150 is made of a material composed of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, Ti, W, Cr, and two or more of these alloys. It may be formed of a material selected from the group containing. The first electrode 150 may be formed of one layer or a plurality of layers. The first electrode 150 may include a plurality of metal layers as reflective metals, and Cr or Ti as an adhesive layer. For example, the first electrode 150 may be formed of a Cr/Al/Ni/Au/Ti layer.

Subsequently, as shown in FIGS. 11A to 11C, a second insulating layer 142 may be formed on the first electrode 150.

11A to 11C are views showing an example in which a second insulating layer is formed in a method of manufacturing a semiconductor device according to an exemplary embodiment of the present invention. 11A is a plan view showing a shape of a second insulating layer formed according to a method of manufacturing a semiconductor device according to an embodiment, FIG. 11B is a cross-sectional view taken along line AA of the semiconductor device according to the embodiment shown in FIG. 11A, and FIG. 11C is A cross-sectional view taken along line BB of the semiconductor device according to the embodiment illustrated in FIG. 11A.

According to an embodiment, as shown in FIGS. 11A to 11C, the second insulation exposing upper surfaces of the plurality of light emitting structures P11, P12, P21, P22, ... on the first electrode 150 Layer 142 may be formed. The second insulating layer 142 may be formed on side surfaces of the plurality of light emitting structures P11, P12, P21, P22, ...). The second insulating layer 142 may be formed on the first conductive type reflective layer 113. The second insulating layer 142 may be formed in a region between the plurality of light emitting structures P11, P12, P21, P22, ...).

The second insulating layer 142 may be provided with an insulating material. For example, the second insulating layer 142 is SiO ₂ , TiO ₂ , Ta ₂ O ₅ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ It may be formed of at least one material selected from the group including.

In addition, the second insulating layer 142 may be formed of a DBR layer. According to an embodiment, since the second insulating layer 142 is provided as a DBR layer, light generated from a plurality of light emitting structures (P11, P12, P21, P22, ...) can be efficiently reflected and extracted downward. There will be. For example, the second insulating layer 142 may be provided as a DBR layer formed by stacking _{SiO 2} and TiO _{2 in a plurality of layers.} In addition, the second insulating layer 142 may be provided as a DBR layer formed by stacking _{Ta 2} O ₃ and SiO _{2 in a plurality of layers.} In addition, the second insulating layer 142 may be provided as a DBR layer formed by stacking _{SiO 2} and Si ₃ N _{4 in a plurality of layers.}

In addition, the second insulating layer 142 may include a spin on glass (SOG) layer. When the second insulating layer 142 includes an SOG layer, a problem due to a step difference in a region around the light emitting structure of the semiconductor device 200 may be solved.

A step may be generated between a region in which an upper reflective layer is provided and a region in which the upper reflective layer is not provided around the light emitting structure of the semiconductor device 200. When a step is formed around the light emitting structure of the semiconductor device 200 with a large step, the thickness of the second insulating layer 142 may not be uniformly formed in the stepped region, and a pit may be partially formed. In addition, when a pit is formed in the second insulating layer 142, the insulating property is deteriorated, so that an electrical short between the first electrode 150 and the second electrode 160 to be formed later may occur. There is a risk that it can be.

However, according to the semiconductor device 200 according to the embodiment, by making the second insulating layer 142 include the SOG layer, it is possible to prevent the formation of a pit in the second insulating layer 142. have. Accordingly, according to the embodiment, it is possible to prevent an electrical short between the first electrode 150 and the second electrode 160 from occurring.

Next, as shown in FIGS. 12A to 12C, a second electrode 160 may be formed on the second insulating layer 142.

12A to 12C are diagrams illustrating an example in which a second electrode is formed in a method of manufacturing a semiconductor device according to an exemplary embodiment of the present invention. 12A is a plan view showing a shape of a second electrode formed according to a method of manufacturing a semiconductor device according to an embodiment, FIG. 12B is a cross-sectional view taken along line AA of the semiconductor device according to the embodiment shown in FIG. 12A, and FIG. 12C is A cross-sectional view taken along line BB of the semiconductor device according to the embodiment illustrated in 12A.

According to an embodiment, as shown in FIGS. 12A to 12C, the second electrode 160 including an upper electrode 160a and a connection electrode 160b is formed on the second insulating layer 142. I can. The upper electrode 160a may be formed on an upper surface of the plurality of light emitting structures P11, P12, P21, P22, ... exposed by the second insulating layer 142. The connection electrode 160b may connect the upper electrode 160a.

The upper electrode 160a may be formed on an upper surface of the second conductive type reflective layer constituting the plurality of light emitting structures P11, P12, P21, P22, …. The connection electrode 160b may electrically and physically connect the upper electrodes 160a disposed on the plurality of light emitting structures P11, P12, P21, P22,… to each other. The connection electrode 160b may be formed in a region between the plurality of light emitting structures P11, P12, P21, P22, ….

The second electrode 160 may be electrically connected to the second reflective layer 120a of the first light emitting structure P11. The second electrode 160 may include an upper electrode 160a and a connection electrode 160b.

The upper electrode 160a may be disposed in contact with the upper surface of the upper reflective layer of the first light emitting structure P11. The connection electrode 160b may be disposed on a side surface and a periphery of the first light emitting structure P11 to be electrically connected to the upper electrode 160a.

The second electrode 160 may provide a third opening h3 exposing the first electrode 150 disposed around the first active layer 115a of the first light emitting structure P11. The upper surface of the first electrode 150 may be exposed through the third opening h3.

The second electrode 160 may be disposed on a side surface of the first light emitting structure P11. The second electrode 160 may be disposed on an upper surface of the first light emitting structure P11. The upper electrode 160a of the second electrode 160 may be disposed on the second reflective layer 120a of the first light emitting structure P11. The upper electrode 160a of the second electrode 160 may be disposed in direct contact with the upper surface of the second reflective layer 120a.

In addition, the second electrode 160 may be electrically connected to the fourth reflective layer 120b of the second light emitting structure P21. The second electrode 160 may include an upper electrode 160a and a connection electrode 160b.

The upper electrode 160a may be disposed in contact with the upper surface of the upper reflective layer of the second light emitting structure P21. The connection electrode 160b may be disposed on a side surface and a periphery of the second light emitting structure P21 to be electrically connected to the upper electrode 160a.

The second electrode 160 may be disposed on a side surface of the second light emitting structure P21. The second electrode 160 may be disposed on an upper surface of the second light emitting structure P21. The upper electrode 160a of the second electrode 160 may be disposed on the fourth reflective layer 120b of the second light emitting structure P21. The upper electrode 160a of the second electrode 160 may be disposed in direct contact with the upper surface of the fourth reflective layer 120b.

As an example, the second electrode 160 is made of a material composed of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, Ti, W, Cr, and an alloy of two or more of them. It may be formed of a material selected from the group containing. The second electrode 160 may be formed of one layer or a plurality of layers. The second electrode 160 may include a plurality of metal layers as reflective metals, and Cr or Ti as an adhesive layer. For example, the second electrode 160 may be formed of a Cr/Al/Ni/Au/Ti layer.

In addition, as shown in FIGS. 13A to 13C, a third insulating layer 143 may be formed on the second electrode 160.

13A to 13C are views illustrating an example in which a third insulating layer is formed in a method of manufacturing a semiconductor device according to an exemplary embodiment of the present invention. 13A is a plan view showing a shape of a third insulating layer formed according to a method of manufacturing a semiconductor device according to an embodiment, FIG. 13B is a cross-sectional view taken along line AA of the semiconductor device according to the embodiment shown in FIG. 13A, and FIG. 13C is 13A is a cross-sectional view taken along line BB of the semiconductor device according to the embodiment illustrated in FIG. 13A.

According to an embodiment, as shown in FIGS. 13A and 13B, a third insulating layer exposing the first electrode 150 disposed between the first plurality of light emitting structures P11, P12, ... 143) can be formed. The third insulating layer 143 may include a plurality of fourth openings h4 exposing the first electrode 150. For example, the fourth opening h4 may be provided in a region in which the third opening h3 is formed.

In addition, according to an embodiment, as shown in FIGS. 13A and 13C, a third insulation exposing the second electrode 160 disposed between the second plurality of light emitting structures P21, P22, ... Layer 143 may be formed. The third insulating layer 143 may include a plurality of fifth openings h5 exposing the second electrode 160. The third insulating layer 143 may provide a fifth opening h5 exposing the upper surface of the connection electrode 160b of the second electrode 160.

The third insulating layer 143 may be provided with an insulating material. For example, the third insulating layer 143 is SiO ₂ , TiO ₂ , Ta ₂ O ₅ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ It may be formed of at least one material selected from the group including.

In addition, the third insulating layer 143 may be formed of a DBR layer. According to an embodiment, since the third insulating layer 143 is provided as a DBR layer, light generated from a plurality of light emitting structures (P11, P12, P21, P22, ...) can be efficiently reflected and extracted downward. There will be. For example, the third insulating layer 143 may be provided as a DBR layer formed by stacking _{SiO 2} and TiO _{2 in a plurality of layers.} In addition, the third insulating layer 143 may be provided as a DBR layer formed by stacking _{Ta 2} O ₃ and SiO _{2 in a plurality of layers.} In addition, the third insulating layer 143 may be provided as a DBR layer formed by stacking _{SiO 2} and Si ₃ N _{4 in a plurality of layers.}

In addition, the third insulating layer 143 may include a spin on glass (SOG) layer. When the third insulating layer 143 includes an SOG layer, a problem due to a step difference in a region around the light emitting structure of the semiconductor device 200 may be solved.

A step may be generated between a region in which an upper reflective layer is provided and a region in which the upper reflective layer is not provided around the light emitting structure of the semiconductor device 200. If a step is formed around the light emitting structure of the semiconductor device 200 with a large step, the thickness of the third insulating layer 143 may not be uniformly formed in the stepped region, and a pit may be partially formed. In addition, when a pit is formed in the third insulating layer 143, insulating properties are deteriorated, and an electrical short between the second electrode 160 and the first bonding pad 155 to be formed later occurs. There is a danger of becoming.

However, according to the semiconductor device 200 according to the embodiment, the formation of a pit in the third insulating layer 143 can be prevented by making the third insulating layer 143 include the SOG layer. have. Accordingly, according to an exemplary embodiment, it is possible to prevent occurrence of an electrical short between the second electrode 160 and the first bonding pad 155.

Subsequently, as shown in FIGS. 14A to 14C, a first bonding pad 155 and a second bonding pad 165 may be formed on the third insulating layer 143.

14A to 14C are views showing an example in which a first bonding pad and a second bonding pad are formed in a method of manufacturing a semiconductor device according to an exemplary embodiment of the present invention. 14A is a plan view showing the shapes of a first bonding pad and a second bonding pad formed according to a method of manufacturing a semiconductor device according to the embodiment, and FIG. 14B is a cross-sectional view taken along line AA of the semiconductor device according to the embodiment shown in FIG. 14A. And FIG. 14C is a cross-sectional view taken along line BB of the semiconductor device according to the embodiment illustrated in FIG. 14A.

According to an embodiment, as illustrated in FIGS. 14A to 14C, the first bonding pad 155 and the second bonding pad 165 may be formed to be spaced apart on the third insulating layer 143.

The first bonding pad 155 may be disposed on the plurality of fourth openings h4 to be electrically connected to the first electrode 150. For example, the lower surface of the first bonding pad 155 may be disposed in direct contact with the upper surface of the first electrode 150 through the fourth opening h4.

The second bonding pad 165 may be disposed on the plurality of fifth openings h5 to be electrically connected to the second electrode 160. For example, the lower surface of the second bonding pad 165 may be disposed in direct contact with the upper surface of the second electrode 160 through the fifth opening h5.

For example, the first bonding pad 155 and the second bonding pad 165 are Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, Ti, W, Cr , Cu, and a material composed of two or more of these alloys may be formed of a material selected from the group. The first bonding pad 155 and the second bonding pad 165 may be formed of one layer or a plurality of layers. The first bonding pad 155 and the second bonding pad 165 may include a diffusion barrier metal such as Cr or Cu to prevent Sn diffusion from solder bonding, for example. For example, the first bonding pad 155 and the second bonding pad 172 may be formed of a plurality of layers including Ti, Ni, Cu, Cr, and Au.

The semiconductor device according to the embodiment described above may be attached to the submount and supplied in the form of a semiconductor device package. 15 is a diagram illustrating a semiconductor device package according to an embodiment of the present invention. In describing the semiconductor device package according to the embodiment with reference to FIG. 15, the description of the semiconductor device described above may be omitted.

The semiconductor device package 400 according to the embodiment may include a submount 300 and a semiconductor device 200 disposed on the submount 300, as illustrated in FIG. 15.

The semiconductor device 200 may include a first bonding pad 155 and a second bonding pad 165. The first bonding pad 155 and the second bonding pad 165 may be disposed on the first surface S1 of the semiconductor device 200. In addition, the semiconductor device 200 may include a second surface S2 disposed in a direction opposite to the first surface S1.

According to an embodiment, the semiconductor device 200 may be disposed on the submount 300 through the first bonding pad 155 and the second bonding pad 165. The first bonding pad 155 and the second bonding pad 165 may be electrically connected to the submount 300. The submount 300 may include a circuit board providing power to the semiconductor device 200.

The semiconductor device 200 according to the embodiment may emit light generated through the second surface S2 as described above. The semiconductor device 200 provides a beam to the outside through the second surface S2, which is a surface opposite to the first surface S1 on which the first bonding pad 155 and the second bonding pad 165 are formed. can do.

According to the semiconductor device package 400 according to the embodiment, power may be supplied to the semiconductor device 200 through the submount 300. In addition, the semiconductor device package 400 may effectively dissipate heat generated from the semiconductor device 200 through the submount 300.

According to an embodiment, the submount 300 may include a circuit electrically connected to the semiconductor device 200. For example, the submount 300 may be formed of a material such as silicon (Si) or aluminum nitride (AlN).

Meanwhile, the semiconductor device and semiconductor device package described above may be applied to object detection, 3D motion recognition, and IR illumination fields. In addition, the semiconductor device and semiconductor device package described above may be applied to the fields of Light Detection and Ranging (LiDAR), blind spot detection (BSD), and Advanced Driver Assistance System (ADAS) for autonomous driving. In addition, the semiconductor device and the semiconductor device package described above may be applied to a human machine interface (HMI) field.

The semiconductor device and the semiconductor device package according to the embodiment may be applied to a proximity sensor, an auto focus device, etc. as an example of an object detection device. For example, the object detection device according to the embodiment may include a light emitting unit that emits light and a light receiving unit that receives light. As an example of the light emitting unit, the semiconductor device package described with reference to FIG. 15 may be applied. A photodiode may be applied as an example of the light receiving unit. The light receiving unit may receive light reflected from an object by light emitted from the light emitting unit.

In addition, the autofocus device can be variously applied to a mobile terminal, a camera, a vehicle sensor, an optical communication device, and the like. The auto focus device can be applied to various fields for multi-position detection that detects the position of an object.

16 is a perspective view of a mobile terminal to which an autofocus device including a semiconductor device package according to an exemplary embodiment is applied.

As shown in FIG. 16, the mobile terminal 1500 according to the embodiment may include a camera module 1520, a flash module 1530, and an autofocus device 1510 provided on the rear side. Here, the autofocus device 1510 may include a semiconductor device package according to the embodiment described with reference to FIG. 15 as a light emitting unit.

The flash module 1530 may include a light emitting device that emits light therein. The flash module 1530 may be operated by a camera operation of a mobile terminal or a user's control. The camera module 1520 may include an image capturing function and an auto focus function. For example, the camera module 1520 may include an auto focus function using an image.

The auto focus device 1510 may include an auto focus function using a laser. The autofocus device 1510 may be mainly used in a condition in which an autofocus function using an image of the camera module 1520 deteriorates, for example, in a proximity or dark environment of 10m or less. The autofocusing device 1510 may include a light-emitting unit including a vertical cavity surface emission laser (VCSEL) semiconductor device, and a light-receiving unit that converts light energy such as a photodiode into electrical energy.

Features, structures, effects, and the like described in the embodiments above are included in at least one embodiment, and are not necessarily limited to only one embodiment. Further, the features, structures, effects, etc. illustrated in each embodiment may be combined or modified for other embodiments by a person having ordinary knowledge in the field to which the embodiments belong. Therefore, contents related to such combinations and modifications should be construed as being included in the scope of the embodiment.

Although the embodiments have been described above, these are only examples and are not intended to limit the embodiments, and those of ordinary skill in the field to which the embodiments belong to various embodiments not illustrated above within the scope not departing from the essential characteristics of the present embodiment. It will be seen that branch transformation and application are possible. For example, each component specifically shown in the embodiment can be modified and implemented. And differences related to these modifications and applications should be interpreted as being included in the scope of the embodiments set in the appended claims.

P11, P12, P13, P21, P22, P23 light emitting structure
105 substrate
110a first reflective layer
110b third reflective layer
113 First conductivity type reflective layer
115a first active layer
115b second active layer
117a first aperture layer
117b second aperture layer
120a second reflective layer
120b fourth reflective layer
141 first insulating layer
142 second insulating layer
143 third insulating layer
150 first electrode
155 first bonding pad
160 second electrode
160a upper electrode
160b connecting electrode
165 Second bonding pad
200 semiconductor devices
300 submount
400 semiconductor device package

Claims (12)

Board;
A first conductive type reflective layer disposed on the substrate;
A plurality of light emitting structures provided with a plurality of light emitting structures including an active layer and a second conductive type reflective layer disposed on the first conductive type reflective layer;
A first electrode electrically connected to the first conductivity type reflective layer;
A second electrode electrically connected to the second conductive type reflective layer;
A first insulating layer disposed on the first electrode and providing an opening;
A first bonding pad disposed on the plurality of light emitting structures and electrically connected to the first electrode; And
A second bonding pad disposed on the plurality of light emitting structures to be spaced apart from the first bonding pad and electrically connected to the second electrode; Including,
A first area in which the first bonding pad is disposed;
A second area in which the second bonding pad is disposed; Has,
The openings of the first insulating layer are disposed in the first and second areas and are disposed between the plurality of light emitting structures, and the shortest distance between the two facing points of the opening is two points facing the upper surface of the light emitting structure. A laser diode smaller than the shortest distance of. The method of claim 1,
The first electrode is disposed under the first bonding pad and under the second bonding pad, and provides a plurality of openings exposing the active layer and the second conductive type reflective layer of the plurality of light emitting structures. The method of claim 1,
The second electrode is disposed under the first bonding pad and under the second bonding pad, and exposes the first electrode disposed around the active layer of the plurality of light emitting structures under the first bonding pad. A laser diode that provides an opening. The method of claim 1,
The second electrode is a laser diode in contact with an upper surface of the second conductive type reflective layer of the plurality of light emitting structures. The method of claim 1,
A laser diode further comprising a second insulating layer disposed between the first electrode and the second electrode. The method of claim 5,
The second insulating layer provides a plurality of first openings and a plurality of second openings disposed under the first bonding pad,
The first bonding pad and the first electrode are electrically connected through a plurality of first openings provided in the second insulating layer,
A laser diode in which the second conductive type reflective layer of the plurality of light emitting structures and the second electrode are electrically connected through a plurality of second openings provided in the second insulating layer. The method of claim 5,
The second insulating layer provides a plurality of openings disposed under the second bonding pad,
The second conductive type reflective layer of the plurality of light emitting structures and the second electrode are electrically connected to each other through a plurality of openings provided in the second insulating layer. The method of claim 1,
The second electrode is a laser diode including an upper electrode disposed in contact with an upper surface of the second conductive type reflective layer of the plurality of light emitting structures, and a connection electrode disposed on the first electrode between the plurality of light emitting structures . The method of claim 1,
The substrate is a laser diode of an intrinsic semiconductor substrate. The method of claim 1,
A laser diode in which the reflectance of the first conductivity-type reflective layer is smaller than that of the second conductivity-type reflective layer. Submount;
A laser diode according to any one of claims 1 to 10 disposed on the submount;
Including,
The laser diode includes a first surface on which the first bonding pad and the second bonding pad are disposed, and a second surface disposed in a direction opposite to the first surface,
The first bonding pad and the second bonding pad are electrically connected to the submount,
The semiconductor device package in which light generated by the laser diode is emitted to the outside through the second surface. The semiconductor device package according to claim 11;
A light receiving unit receiving reflected light of light emitted from the semiconductor device package;
Object detection device comprising a.

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