KR102385937B1 - Semiconductor device package and optical assembly - Google Patents

Abstract

The embodiment relates to a semiconductor device package and an optical assembly including the same.
A semiconductor device package according to the embodiment includes a substrate 205; a semiconductor device 100 on the substrate 205; a housing 230 disposed on the substrate 205 and disposed around the semiconductor device 100; and a first diffusion unit 250 spaced apart from the semiconductor device 100 and disposed on the housing 230 .
The diffusion part 250 may be disposed on the first area A1 of the upper surface of the housing 230 .
The embodiment may include the first light-transmitting coupling layer 240 disposed on the second area A2 of the upper surface of the housing 230 .

Description

Semiconductor device package and optical assembly including same

The embodiment relates to a semiconductor device, and more particularly, to a semiconductor light emitting device, a semiconductor light source device, a semiconductor optical device, a semiconductor light source chip, a light emitting device, a light emitting device package and an optical transmission/reception module including the same, an autofocus device, and an optical assembly will be.

A semiconductor device including a compound such as GaN or AlGaN has many advantages, such as having a wide and easily adjustable band gap energy, and thus can be used in various ways as a light emitting device, a light receiving device, and various diodes.

In particular, light emitting devices such as light emitting diodes or laser diodes using group 3-5 or group 2-6 compound semiconductor materials of semiconductors have developed red, green, and Various colors such as blue and ultraviolet light can be realized, and white light with good efficiency can be realized by using fluorescent materials or combining colors. It has the advantages of speed, safety and environmental friendliness.

In addition, when a light receiving device such as a photodetector or a solar cell is manufactured using a semiconductor group 3-5 or group 2-6 compound semiconductor material, it absorbs light in various wavelength ranges and generates a photocurrent. By doing so, light of various wavelength ranges from gamma rays to radio wavelength ranges can be used. In addition, it has the advantages of fast response speed, safety, environmental friendliness, and easy adjustment of device materials, so it can be easily used for power control or ultra-high frequency circuits or communication modules.

Therefore, a light emitting diode backlight that replaces a Cold Cathode Fluorescence Lamp (CCFL) constituting a transmission module of an optical communication means, a backlight of a liquid crystal display (LCD) display device, and white light emission that can replace a fluorescent lamp or incandescent light bulb Applications are expanding to diode lighting devices, automobile headlights, traffic lights, and sensors that detect gas or fire. In addition, the application can be extended to high-frequency application circuits, other power control devices, and communication modules.

Meanwhile, among the conventional semiconductor light source device technologies, there is a vertical-cavity surface-emitting laser (VCSEL), which is used for optical communication, optical parallel processing, optical connection, autofocus, and the like.

In addition, in the prior art, the vertical resonance type surface emitting laser is being used as a high-power VCSEL package structure for vehicles or mobiles.

On the other hand, in the prior art, in the high-power VCSEL package structure, a diffuser is employed to form a constant angle of view (FoV). When irradiated into the human eye, there is a risk that a person may become blind. Accordingly, there is a need for research on a semiconductor device package that can prevent direct strong light from being incident on a person while being applied to an application field such as a vehicle or human movement.

In addition, in the prior art, semiconductor devices are required to be driven with high output and high voltage as the application fields are diversified, and the temperature of the semiconductor device package is rising a lot by heat generated from the semiconductor device according to the high output and high voltage driving of the semiconductor device.

Accordingly, there is a demand for a method for efficiently dissipating heat generated from a semiconductor device package. In addition, there is a strong demand for miniaturization of semiconductor device packages for miniaturization of products. Accordingly, there is an increasing demand for a semiconductor device package capable of efficiently dissipating heat generated from a semiconductor device while being provided in a small size.

In addition, in the prior art, in a situation where high output and high voltage driving of semiconductor devices is required, moisture penetration has a negative effect on the mechanical and electrical reliability of semiconductor devices, but an appropriate countermeasure for this is not prepared.

One of the technical problems of the embodiment is to provide a semiconductor device package and an optical assembly that have excellent mechanical stability and reliability and can safely protect a device disposed therein from external impact.

In addition, one of the technical problems of the embodiment is to provide a semiconductor device package and an optical assembly having excellent heat dissipation characteristics while providing high output light.

In addition, one of the technical problems of the embodiment is to provide a semiconductor device package and an optical assembly capable of preventing moisture penetration into the interior while providing high-output light.

The technical problem of the embodiment is not limited to the contents described in this item, and includes those that can be grasped from the entire description of the invention.

A semiconductor device package according to the embodiment includes a substrate 205; a semiconductor device 100 on the substrate 205; a housing 230 disposed on the substrate 205 and disposed around the semiconductor device 100; and a first diffusion unit 250 spaced apart from the semiconductor device 100 and disposed on the housing 230 .

The diffusion part 250 may be disposed on the first area A1 of the upper surface of the housing 230 .

The embodiment may include the first light-transmitting coupling layer 240 disposed on the second area A2 of the upper surface of the housing 230 .

In addition, the semiconductor device package according to the embodiment includes a substrate 205; a semiconductor device 100 on the substrate 205; a housing 230 disposed on the substrate 205 and disposed around the semiconductor device 100; and a second diffusion unit 250a spaced apart from the semiconductor device 100 and disposed on the housing 230 .

The diffusion part 250 may be disposed on the first area A1 of the upper surface of the housing 230 .

The embodiment may include a second light-transmitting coupling layer 240a disposed on the second area A2 of the upper surface of the housing 230 .

The second diffusion part 250a may include a first inclined surface S1 .

The optical assembly according to the embodiment may include the semiconductor device package.

According to the embodiment, there is a technical effect of providing a semiconductor device package and an optical assembly that have excellent mechanical stability and reliability and can safely protect a device disposed therein from external impact.

In addition, according to the embodiment, there is a technical effect of providing a semiconductor device package and an optical assembly having excellent heat dissipation characteristics while providing high output light.

In addition, according to the embodiment, there is a technical effect that can provide a semiconductor device package and an optical assembly capable of preventing moisture penetration into the interior while providing high-output light.

The technical effects of the embodiments are not limited to the contents described in this item, and include those that can be understood from the entire description of the invention.

1 is a cross-sectional view of a semiconductor device package according to a first embodiment;
2 to 4 are a plan view and a cross-sectional view of a semiconductor device that may be employed in a semiconductor device package according to an embodiment.
5 is a cross-sectional view of a semiconductor device package according to a second embodiment;
6 is a cross-sectional view of a semiconductor device package according to a third embodiment;
7 to 11 are manufacturing process diagrams of a semiconductor device package according to an embodiment.
12 is a perspective view of a mobile terminal to which an optical assembly including a semiconductor device package according to an embodiment is applied;

Hereinafter, embodiments that can be specifically realized for solving the above problems will be described with reference to the accompanying drawings.

In the description of the embodiment, in the case where it is described as being formed on "on or under" of each element, the upper (upper) or lower (on or under) is The two elements are in direct contact with each other or one or more other elements are disposed between the two elements indirectly. In addition, when expressed as "up (up) or down (on or under)", it may include the meaning of not only an upward direction but also a downward direction based on one element.

The semiconductor device of the embodiment may include various electronic devices such as a light emitting device and a light receiving device, and both the light emitting device and the light receiving device may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer.

The semiconductor device according to the present embodiment may be a light emitting device. The light emitting device emits light by recombination of electrons and holes, and the wavelength of this light is determined by the material's inherent energy bandgap. Accordingly, the emitted light may vary depending on the composition of the material.

(Example 1)

1 is a cross-sectional view of a semiconductor device package 200 according to a first embodiment.

The semiconductor device package 200 according to the first embodiment includes a substrate 205 , a first electrode part 210 , a second electrode part 220 , a semiconductor device 100 , and first and second wires 215 and 225 . ), the housing 230 , the support part 242 , the first light-transmitting coupling layer 240 , and at least one of the first diffusion part 250 .

Hereinafter, the semiconductor device package according to the first embodiment will be described in detail with reference to FIG. 1 .

<Substrate, electrode part>

One of the technical problems of the embodiment is to provide a semiconductor device package and an optical assembly having excellent heat dissipation characteristics while providing high output light.

In an embodiment, the substrate 110 may include a material having high thermal conductivity. Accordingly, the substrate 110 may be provided with a material having good heat dissipation characteristics to efficiently dissipate the heat generated by the semiconductor device 100 to the outside. The substrate 110 may include an insulating material.

For example, the substrate 110 may include a ceramic material. The substrate 110 may include a co-fired low temperature co-fired ceramic (LTCC) or a high temperature co-fired ceramic (HTCC).

In addition, the substrate 110 may include a metal compound. The substrate 110 may include a metal oxide having a thermal conductivity of 140 W/mK or higher. For example, the substrate 110 may include aluminum nitride (AlN) or alumina (Al ₂ O ₃ ).

As another example, the substrate 110 may include a resin-based insulating material. The substrate 110 may be made of a silicone resin, an epoxy resin, a thermosetting resin including a plastic material, or a high heat resistance material.

Meanwhile, according to another embodiment, the substrate 110 may include a conductive material. When the substrate 110 is made of a conductive material, for example, a metal, an insulating layer (not shown) for electrical insulation between the substrate 110 and the semiconductor device 100 may be provided.

Accordingly, according to the embodiment, there is a technical effect of providing a semiconductor device package and an optical assembly capable of driving with high output and high voltage and having excellent heat dissipation characteristics.

Next, in the embodiment, the first electrode part 210 and the second electrode part 220 may be disposed on the substrate 205 .

For example, the first electrode part 210 may include a first upper electrode 210a disposed on the substrate 205 , a first bonding part 210c disposed under the substrate 205 , and the first It may include a first connection electrode 210b electrically connecting the upper electrode 210a and the first bonding part 210c.

The first upper electrode 210a may be electrically connected to the semiconductor device 100 . For example, the first upper electrode 210a may be electrically connected to the semiconductor device 100 through a first wire 215 .

In addition, the second electrode part 220 includes a second upper electrode 220a disposed on the substrate 205 , a second bonding part 220c disposed under the substrate 205 , and the second upper electrode ( 220a) and a second connection electrode 220b electrically connecting the second bonding part 220c to each other.

The second upper electrode 220a may be electrically connected to the semiconductor device 100 . For example, the second upper electrode 220a may be electrically connected to the semiconductor device 100 through a second wire 225 .

The first electrode part 210 and the second electrode part 220 may be formed of a conductive metal material. For example, the first electrode part 210 and the second electrode part 220 are Cu, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, It may be formed as a single layer or a multilayer using at least one of Hf or an alloy of two or more of these materials.

<Semiconductor device>

Next, the semiconductor device 100 that may be employed in the semiconductor device package according to the embodiment will be described with reference to FIGS. 2 to 4 .

2 is a plan view of the semiconductor device 100 according to the embodiment, FIG. 3 is a first cross-sectional view taken along the line II′ of the semiconductor device 100 according to the embodiment shown in FIG. 2 , and FIG. 4 is FIG. 2 is a second cross-sectional view taken along line II-II' of the semiconductor device 100 according to the embodiment shown in FIG.

2 to 4 , the semiconductor device 100 according to the embodiment is illustrated as a vertical-cavity surface-emitting laser (VCSEL), but is not limited thereto. Also, in FIGS. 2 to 4 , the semiconductor device 100 according to the embodiment is illustrated with respect to a horizontal VCSEL, but is not limited thereto.

Referring to FIG. 2 , a first electrode 121 and a second electrode 122 are provided on a predetermined light emitting structure 110 (see FIG. 3 ), and an insulating layer 150 is formed on the light emitting structure 110 . can be provided.

The first electrode 121 may include a first pad electrode 121a, a first connection electrode 121b, and a first circular electrode 121c, and the second electrode 122 is a second pad electrode ( 122a), the second connection electrode 122b, and the second circular electrode 122c may be included, but the present invention is not limited thereto.

Hereinafter, the technical characteristics of the semiconductor device 100 according to the embodiment will be described in more detail with reference to FIGS. 2 to 4 .

Referring to FIG. 3 , the semiconductor device 100 according to the embodiment includes a light emitting structure 110 including a first semiconductor layer 112 , an active layer 114 , and a second semiconductor layer 116 , and the first semiconductor The first electrode 121 (refer to FIG. 2) electrically connected to the layer 112, the second electrode 122 (refer to FIG. 2) electrically connected to the second semiconductor layer 116, and the light emitting structure An insulating layer 150 disposed on the 110 may be included.

The semiconductor device 100 according to the embodiment may include a first substrate 105 , and the first substrate 105 may have excellent heat dissipation characteristics and may be a conductive substrate or a non-conductive substrate. For example, the substrate 105 may include copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), copper-tungsten (Cu-W), a carrier wafer (eg, Si, Ge, AlN, GaAs, ZnO, SiC, etc.) may be provided as at least one selected from the group consisting of conductive materials, but is not limited thereto.

In an embodiment, the light emitting structure 110 may include a first semiconductor layer 112 , an active layer 114 , an aperture layer 118 , and a second semiconductor layer 116 . The light emitting structure 110 may be grown with a plurality of compound semiconductor layers. For example, the light emitting structure 110 may be formed by an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), or dual-type thermal evaporator sputtering. , metal organic chemical vapor deposition (MOCVD), or the like.

The first semiconductor layer 112 may be provided with at least one of a group 3-5 or group 2-6 compound semiconductor doped with a dopant of a first conductivity type. For example, the first semiconductor layer 112 may be one of a group including GaAs, GaAl, InP, InAs, and GaP. The first semiconductor layer 112 is, for example, a semiconductor having a composition formula of Al _x Ga _1-x As(0<x<1)/Al _y Ga _1-y As(0<y<1)(y<x). material may be provided. The first semiconductor layer 112 may be an n-type semiconductor layer doped with a dopant of a first conductivity type, for example, an n-type dopant such as Si, Ge, Sn, Se, or Te. The first semiconductor layer 112 may be a DBR (Distributed Bragg Reflector) having a thickness of λ/4n by alternately disposing different semiconductor layers. In addition, the first semiconductor layer 112 may be a DBR using a dielectric multilayer film such as TiO ₂ /SiO ₂ .

The active layer 114 may be provided with at least one of a group 3-5 or group 2-6 compound semiconductor. For example, the active layer 114 may be one of a group including GaAs, GaAl, InP, InAs, and GaP. When the active layer 114 is implemented as a multi-well structure, the active layer 114 may include a plurality of well layers and a plurality of barrier layers that are alternately disposed. The plurality of well layers may be formed of, for example, a semiconductor material having a compositional formula of _{In p} Ga _{1 -p} As (0≤p≤1). The barrier layer may be formed of, for example, a semiconductor material having a compositional formula of In _q Ga _1-q As (0≤q<p).

The aperture layer 118 may be disposed on the active layer 114 . The aperture layer 118 may include a circular opening in its center. The aperture layer 118 may include a function of limiting current movement so that the current is concentrated in the center of the active layer 114 . That is, the aperture layer 118 may adjust the resonance wavelength and adjust the beam angle emitted from the active layer 114 in the vertical direction. The aperture layer 118 may include an insulating material such as SiO ₂ or Al ₂ O ₃ . Also, the aperture layer 118 may have a higher band gap than the active layer 114 and the first and second semiconductor layers 112 and 116 .

The second semiconductor layer 116 may be provided with at least one of a group 3-5 or group 2-6 compound semiconductor doped with a dopant of a second conductivity type. For example, the second semiconductor layer 116 may be one of a group including GaAs, GaAl, InP, InAs, and GaP. The second semiconductor layer 116 is, for example, a semiconductor having a composition formula of Al _x Ga _1-x As(0<x<1)/Al _y Ga _1-y As(0<y<1)(y<x). It may be formed of a material. The second semiconductor layer 116 may be a p-type semiconductor layer having a second conductivity-type dopant, for example, a p-type dopant such as Mg, Zn, Ca, Sr, or Ba. The second semiconductor layer 116 may be a DBR having a thickness of λ/4n by alternately disposing different semiconductor layers. In addition, the second semiconductor layer 116 may be a DBR using a dielectric multilayer film such as TiO ₂ /SiO ₂ .

The second semiconductor layer 116 may have a lower reflectance than that of the first semiconductor layer 112 . For example, the first and second semiconductor layers 112 and 116 may form resonant cavities in a vertical direction with a reflectivity of 90% or more. In this case, light may be emitted to the outside through the light emitting region LE of the second semiconductor layer 116 that is lower than the reflectance of the first semiconductor layer 112 .

In an embodiment, the first semiconductor layer 112 may be electrically connected to the first electrode 121 , and the second semiconductor layer 116 may be electrically connected to the second electrode 122 .

For example, referring to FIGS. 3 and 4 , the first semiconductor layer 112 is electrically connected to the first circular electrode 121c through the first connection electrode 121b of the first electrode, and the first semiconductor layer 112 is electrically connected to the first circular electrode 121c. The second semiconductor layer 116 may be electrically connected to the second circular electrode 122c through the second connection electrode 122b of the second electrode.

Next, the semiconductor device 100 of the embodiment may include the insulating layer 150 on the light emitting structure 110 . For example, in the embodiment, the insulating layer 150 is an oxide such as SiO ₂ , SixOy, Al ₂ O ₃ , TiO ₂ or a nitride layer such as Si ₃ N ₄ , SixNy, SiOxNy, AlN as a single layer or a plurality of layers. can be formed.

<Housing, first diffusion, first light-transmitting bonding layer>

Referring back to FIG. 1 , the embodiment may include a housing 230 disposed on the substrate 205 , disposed around the semiconductor device 100 , and a first surface of the housing 230 . A first diffusion unit 250 disposed on the area A1 may be included. In addition, the embodiment may include the support part 242 and the first light-transmitting coupling layer 240 disposed on the second area A2 of the housing 230 .

First, the first diffusion 250 may be disposed on the semiconductor device 100 . Also, the first diffusion unit 250 may be disposed on the housing 230 . For example, the first diffusion part 250 may be disposed on the first area A1 of the upper surface of the housing 230 .

The first diffusion unit 250 may set an angle of view of the emitted beam according to an application field of a semiconductor device package. In addition, the first diffusion unit 250 may set the intensity of emitted light according to the application field of the semiconductor device package.

Accordingly, the first diffusion unit 250 may serve to expand a beam field of view (FOV) of the light emitted from the semiconductor device 100 . To this end, the first diffusion unit 250 may include, for example, a micro lens, a concave-convex pattern, and the like.

Also, the first diffusion unit 250 may include an anti-reflective function. For example, the first diffusion unit 250 may include an anti-reflective layer (not shown) disposed on one surface facing the semiconductor device 100 . For example, the first diffusion unit 250 may include an anti-reflective layer disposed on a lower surface facing the semiconductor device 100 . Through this, the anti-reflection layer prevents light incident from the semiconductor device 100 from being reflected on the surface of the first diffusion unit 250 and transmits the light, thereby improving light loss due to reflection.

The anti-reflection layer may be formed of, for example, an anti-reflection coating film and attached to the surface of the first diffusion unit 250 . In addition, the anti-reflection layer may be formed on the surface of the first diffusion unit 250 through spin coating or spray coating. For example, the anti-reflection layer may be formed as a single layer or a multi-layer including at least one selected from the group consisting of TiO ₂ , SiO ₂ , Al ₂ O ₃ , Ta ₂ O ₃ , ZrO ₂ , and MgF ₂ .

The housing 230 may include an insulating material having excellent bonding strength with the substrate 205 . For example, the housing 230 may include a ceramic material such as low temperature co-fired ceramic (LTCC) or high temperature co-fired ceramic (HTCC). Also, the housing 230 may include a resin-based insulating material. For example, the housing 230 may be made of a silicone resin, an epoxy resin, a thermosetting resin including a plastic material, or a high heat resistance material. Also, the housing 230 may include a metal compound. For example, the housing 230 may include aluminum nitride (AlN) or alumina (Al ₂ O ₃ ).

The semiconductor device package according to the embodiment may include an adhesive layer 252 provided between the first diffusion part 250 and the housing 230 . For example, the adhesive layer 252 may include an organic material. The adhesive layer 252 may include an epoxy-based resin. In addition, the adhesive layer 252 may include a silicone-based resin.

Although the first diffusion unit 250 and the housing 230 can be stably fixed by the adhesive layer 252 , the first diffusion unit 250 may be damaged in extreme environments such as long-term use of a semiconductor device package or vibration. The possibility of being separated from the housing 230 may also be raised. At this time, when the first diffusion part 250 is separated from the housing 230 , the strong light emitted from the semiconductor device 100 is not directly irradiated to the outside without passing through the first diffusion part 250 . be able to

However, when the semiconductor device package according to the embodiment is used to detect the movement of a person, strong light not passing through the first diffusion unit 250 may be directly irradiated to the human eye. For example, when strong light emitted from the semiconductor device 100 is directly irradiated to a person's eyes, there is a risk that the person may become blind.

Therefore, there is a demand for a reliable method for preventing the first diffusion unit 250 from being separated from the housing 230 . In addition, under the probabilistic assumption that a case in which the first diffusion unit 250 is separated from the housing 230 may occur in an extreme environment, a person is killed by the strong light emitted from the semiconductor device 100 . It is required to provide a stable way to avoid being hit.

Accordingly, one of the technical problems of the embodiment is to provide a semiconductor device package and an optical assembly that have excellent mechanical stability and can safely protect a device disposed therein from external impact.

In addition, one of the technical problems of the embodiment is to provide a semiconductor device package and an optical assembly capable of preventing moisture penetration into the interior while providing high-output light.

According to the embodiment, by including the first light-transmitting bonding layer 240 disposed on the second area A2 of the upper surface of the housing 230, the first light-transmitting bonding layer 240 applies a lateral bonding force F1. There is a technical effect of providing a semiconductor device package and an optical assembly capable of increasing the mechanical stability and reliability of the diffusion unit 250 and safely protecting the semiconductor device disposed therein from external impact.

The first light-transmitting bonding layer 240 has excellent bonding strength and may have a light-transmitting function. For example, the first light-transmitting bonding layer 240 may include a resin-based material. For example, the first light-transmitting bonding layer 240 may be formed of a silicone type resin, an epoxy type resin, a thermosetting resin including a plastic material, or a high heat resistance material.

In the embodiment, the first light-transmitting bonding layer 240 is in contact with the side surface of the first diffusion unit 250 to apply a lateral bonding force F1 to the diffusion unit 250 to form the first diffusion unit 250 . There is a technical effect that can firmly fix it.

In addition, the embodiment includes the support part 242 on the second area A2 of the upper surface of the housing 230 so that the first light-transmitting bonding layer 240 can be firmly supported on the housing 230 . there is. For example, the support part 242 may be formed on the second area A2 of solder resist to support the first light-transmitting coupling layer 240 on the housing 230 . For example, the support part 242 may be formed of PSR (Photo Image-able Solder Resist), but is not limited thereto.

In an embodiment, the horizontal width of the second region A2 is formed to be larger than the horizontal width of the first region A1 , thereby increasing the bearing capacity of the first light-transmitting bonding layer 240 , and penetration of the invading moisture By enlarging the path, there is a technical effect of providing a semiconductor device package and an optical assembly capable of preventing moisture penetration into the interior while providing high-output light.

(Second embodiment)

5 is a cross-sectional view of the semiconductor device package 202 according to the second embodiment.

The second embodiment may adopt the technical features of the first embodiment, and the main features of the second embodiment will be mainly described below.

The semiconductor device package 202 according to the second embodiment includes a groove H in a first region of the upper surface of the housing 230, and the first diffusion 250 further includes a lower protrusion 255, The lower protrusion 255 is disposed in the groove H of the first region of the upper surface of the housing 230 , thereby improving the coupling force between the first diffusion portion 250 and the housing 230 to improve the diffusion portion 250 . ) can increase the mechanical stability of

The lower protrusion 255 may be formed of the same material as that of the first diffusion unit 250 , but is not limited thereto.

In addition, according to the embodiment, by forming the groove (H) of the first region of the upper surface of the housing 230, it is possible to block the penetration of moisture, and even if the moisture penetrates, it is possible to effectively block the penetration of moisture by expanding the penetration path. There are technical effects.

According to the embodiment, a predetermined second adhesive layer (not shown) may be formed in the groove H of the first region of the upper surface of the housing 230 to improve bonding force.

In the embodiment, the first light-transmitting bonding layer 240 is in contact with the side surface of the first diffusion unit 250 to apply a lateral bonding force F1 to the diffusion unit 250 to form the first diffusion unit 250 . In addition to the technical effect of firmly fixing the housing 230, a semiconductor capable of preventing moisture penetration into the interior while providing high-output light by forming a groove (H) in the first region of the upper surface of the housing 230 to block penetrating moisture. There are multiple technical effects that can provide a device package and an optical assembly.

(Example 3)

6 is a cross-sectional view of the semiconductor device package 200 according to the third embodiment.

The third embodiment may adopt the technical features of the first or second embodiment, and the main features of the third embodiment will be mainly described below.

The semiconductor device package 200 according to the third exemplary embodiment includes a substrate 205 , a semiconductor device 100 on the substrate 205 , and a semiconductor device 100 disposed on the substrate 205 . It may include a housing 230 disposed around it, and a second diffusion part 250a spaced apart from the semiconductor device 100 and disposed on the housing 230 .

In the third embodiment, the second diffusion unit 250a is disposed on the first area of the upper surface of the housing 230 , is disposed on the second area of the upper surface of the housing 230 , and is disposed on the second light-transmitting coupling layer 240a. ), and the second diffusion part 250a may include a first inclined surface S1.

According to the third embodiment, since the second diffusion part 250a includes the first inclined surface S1, not only the side support force F1 but also the upper surface support force F2 applied from the upper surface by the second diffusion part 250a ), there is a technical effect that can provide a semiconductor device package and an optical assembly that have better mechanical stability and reliability and can safely protect the devices disposed therein from external impact.

For example, in the embodiment, the width of the upper region of the second diffusion unit 250a may be smaller than the width of the lower region, and accordingly, the second diffusion unit 250a is a second diffusion unit 250a having a side having a reduced width. One inclined surface S1 may be provided.

In addition, the second light-transmitting coupling layer 240a may include a second inclined surface S2 corresponding to the first inclined surface S1 of the second diffusion unit 250a. The width of the upper region of the second light-transmitting bonding layer 240a may be greater than the width of the lower region.

Accordingly, the second light-transmitting bonding layer 240a holds the second diffusion unit 250a by the side support force F1 applied from the side surface of the second diffusion unit 250a and the upper surface support force F2 applied from the upper side. There is a technical effect of providing a semiconductor device package and an optical assembly having very excellent mechanical stability and reliability as it is supported very strongly.

(Manufacture process)

Hereinafter, a manufacturing process of the semiconductor device package according to the embodiment will be described with reference to FIGS. 7 to 11 .

First, as shown in FIG. 7 , the first electrode part 210 and the second electrode part 220 may be formed on the substrate 205 . The first electrode part 210 includes a first upper electrode 210a disposed on the substrate 205 , a first bonding part 210c disposed under the substrate 205 , and the first upper electrode 210a . ) and a first connection electrode 210b electrically connecting the first bonding portion 210c.

In addition, the second electrode part 220 includes a second upper electrode 220a disposed on the substrate 205 , a second bonding part 220c disposed under the substrate 205 , and the second upper electrode ( 220a) and a second connection electrode 220b electrically connecting the second bonding part 220c to each other.

Next, a housing 230 may be formed on the substrate 205 . The substrate 110 and the housing 230 may be manufactured by a wafer level package process.

Next, the semiconductor device 100 is disposed on the substrate 205 , and the first upper electrode 210a and the second upper electrode 220a are connected through a first wire 215 and a second wire 225 . ) and may be electrically connected to each other.

Next, as shown in FIG. 8 , a first adhesive layer 252 may be disposed on a first area of the upper surface of the housing 230 , and a support part 242 may be disposed on a second area of the upper surface of the housing 230 . can be

The adhesive layer 252 may include an organic material. The adhesive layer 252 may include an epoxy-based resin. In addition, the adhesive layer 252 may include a silicone-based resin.

In the embodiment, the first light-transmitting coupling layer 240 may be firmly supported on the housing 230 by including the support part 242 on the second region of the upper surface of the housing 230 . For example, the support part 242 may be formed on the second area A2 of solder resist to support the first light-transmitting coupling layer 240 on the housing 230 . For example, the support part 242 may be formed of PSR (Photo Image-able Solder Resist), but is not limited thereto.

Next, the first diffusion unit 250 may be coupled to the first adhesive layer 252 . The housing 230 may include an insulating material having excellent bonding strength with the substrate 205 . For example, the housing 230 may include a ceramic material such as low temperature co-fired ceramic (LTCC) or high temperature co-fired ceramic (HTCC). Also, the housing 230 may include a resin-based insulating material. For example, the housing 230 may be made of a silicone resin, an epoxy resin, a thermosetting resin including a plastic material, or a high heat resistance material. Also, the housing 230 may include a metal compound. For example, the housing 230 may include aluminum nitride (AlN) or alumina (Al ₂ O ₃ ).

Next, as shown in FIG. 9 , a first light-transmitting coupling layer 240 may be formed on the second region of the housing 230 . The first light-transmitting bonding layer 240 has excellent bonding strength and may have a light-transmitting function. For example, the first light-transmitting bonding layer 240 may include a resin-based material. For example, the first light-transmitting bonding layer 240 may be formed of a silicone type resin, an epoxy type resin, a thermosetting resin including a plastic material, or a high heat resistance material.

In the embodiment, the first light-transmitting bonding layer 240 is in contact with the side surface of the first diffusion unit 250 to apply a lateral bonding force to the diffusion unit 250 to firmly fix the first diffusion unit 250 . There are possible technical effects.

Next, as shown in FIG. 9 , the semiconductor device package 200 according to the embodiment may be manufactured as shown in FIG. 10 by a cutting method such as dicing (D).

As described above, according to the embodiment, the first diffusion unit 250 may also be attached on the housing 230 by a wafer level packaging process.

That is, after the semiconductor device 100 and the housing 230 are attached to the substrate 205 at the wafer level, and the first diffusion unit 250 is attached to the housing 230, dicing is performed. A plurality of semiconductor device packages in which the semiconductor device 100 , the housing 230 , and the first diffusion unit 250 are coupled to the substrate 205 by a cutting method may be provided.

As such, when the semiconductor device package 200 including the substrate 205 , the housing 230 , and the first diffusion unit 250 is manufactured by a wafer level package process, the substrate 205 is A side surface, an outer surface of the housing 230 , and an outer surface of the first diffusion unit 250 may be disposed on the same plane.

That is, there is no step difference between the outer surface of the substrate 205 , the outer surface of the housing 230 , and the outer surface of the first diffusion unit 250 . According to the embodiment, since there is no step difference between the outer surface of the substrate 205 , the outer surface of the housing 230 , and the outer surface of the first diffusion unit 250 , moisture permeation by the stepped structure in the conventional semiconductor device package And it is possible to fundamentally prevent a defect in which damage is caused by external friction.

In addition, according to another embodiment, the substrate 205 and the housing 230 are manufactured by a wafer level package process, and the first diffusion unit 250 is attached on the housing 230 in a separate process. it might be

As described above, the semiconductor device package according to the embodiment may include a vertical cavity surface emitting laser semiconductor device (VCSEL).

A vertical cavity surface emitting laser semiconductor device can convert an electrical signal into an optical signal. In the vertical cavity surface emission laser semiconductor device, a circular laser beam may be vertically emitted from the substrate surface, unlike a general side-emitting laser (LD). Therefore, the vertical cavity surface emitting laser semiconductor device is easy to connect to a light receiving device or an optical fiber, and has an advantage in that it is easy to arrange two-dimensionally, so that parallel signal processing is possible. In addition, the vertical cavity surface emitting laser semiconductor device has the advantages of high-density integration due to miniaturization of the device, low power consumption, a simple manufacturing process, and good heat resistance.

The vertical cavity surface emission laser semiconductor device can be applied to digital media, such as laser printers, laser mice, DVI, HDMI, high-speed PCBs, and home networks. In addition, the vertical cavity surface emitting laser semiconductor device can be applied to automotive fields such as multimedia networks in automobiles and safety sensors. In addition, the vertical cavity surface emitting laser semiconductor device can be applied to information and communication fields such as Gigabit Ethernet, SAN, SONET, and VSR. In addition, the vertical cavity surface emission laser semiconductor device can be applied to sensor fields such as encoders and gas sensors. In addition, the vertical cavity surface emitting laser semiconductor device can be applied to medical and bio fields such as a blood glucose meter and a laser for skin care.

Meanwhile, the semiconductor device package according to the embodiment described above may be applied to a proximity sensor, an autofocus device, and the like. For example, an autofocus device according to an embodiment may include a light emitting unit emitting light and a light receiving unit receiving light. As an example of the light emitting unit, at least one of the semiconductor device packages described with reference to FIGS. 1 to 11 may be applied. A photodiode may be applied as an example of the light receiving unit. The light receiving unit may receive light emitted from the light emitting unit and reflected from the object.

The auto focus device may be variously applied to a mobile terminal, a camera, a vehicle sensor, an optical communication device, and the like. The autofocus device may be applied to various fields for multi-position detection for detecting a position of a subject.

(optical assembly)

12 is an optical assembly including a semiconductor device package according to an embodiment, for example;

It is a perspective view of the mobile terminal 1500 to which the auto focus device is applied.

As shown in FIG. 12 , the mobile terminal 1500 according to the embodiment may include a camera module 1520 , a flash module 1530 , and an auto focus device 1510 provided on the rear side. Here, the autofocus device 1510 may include one of the semiconductor device packages according to the embodiments described with reference to FIGS. 1 to 11 as a light emitting part.

The flash module 1530 may include a light emitting device emitting light therein. The flash module 1530 may be operated by a camera operation of a mobile terminal or a user's control. The camera module 1520 may include an image capturing function and an auto focus function. For example, the camera module 1520 may include an auto-focus function using an image.

The auto-focus device 1510 may include an auto-focus function using a laser. The auto focus device 1510 may be mainly used in a condition in which the auto focus function using the image of the camera module 1520 is deteriorated, for example, in proximity of 10 m or less or in a dark environment. The autofocus device 1510 may include a light emitting unit including a vertical cavity surface emitting laser (VCSEL) semiconductor device and a light receiving unit that converts light energy such as a photodiode into electrical energy.

Features, structures, effects, etc. described in the above embodiments are included in at least one embodiment, and are not necessarily limited to only one embodiment. Furthermore, features, structures, effects, etc. illustrated in each embodiment can be combined or modified for other embodiments by those of ordinary skill in the art to which the embodiments belong. Accordingly, the contents related to such combinations and modifications should be interpreted as being included in the scope of the embodiments.

In the above, the embodiment has been mainly described, but this is only an example and does not limit the embodiment, and those of ordinary skill in the art to which the embodiment belongs are provided with several examples not illustrated above in the range that does not deviate from the essential characteristics of the embodiment. It can be seen that variations and applications of branches are possible. For example, each component specifically shown in the embodiment can be implemented by modification. And differences related to such modifications and applications should be construed as being included in the scope of the embodiments set forth in the appended claims.

The semiconductor device package 200 , the substrate 205 , the first electrode part 210 , the second electrode part 220 ,
The semiconductor device 100 , the first and second wires 215 and 225 , the housing 230 , the support part 242 ,
The first light-transmitting bonding layer 240 , the first diffusion unit 250 .

Claims (10)

Board;
a semiconductor device disposed on the substrate;
a housing disposed on the substrate and disposed around the semiconductor device;
a first diffusion part covering an upper portion of the semiconductor device and extending into a first region inside the upper surface of the housing; and
a first light-transmitting bonding layer disposed on a second region outside the upper surface of the housing;
The semiconductor device is a surface emitting laser semiconductor device,
The inner side of the first light-transmitting bonding layer is in contact with the side surface of the first diffusion,
The width of the second region is greater than the width of the first region,
A side surface of the first diffusion unit includes an inclined surface,
A width of an upper surface of the first diffusion portion is smaller than a width of a lower surface of the first diffusion portion. According to claim 1,
an adhesive layer disposed between the first diffusion unit and a first region of the upper surface of the housing; and a support disposed on a second region of the upper surface of the housing,
The adhesive layer is bonded to the first diffusion unit and the first light-transmitting bonding layer. 3. The method according to claim 1 or 2,
a groove in the first region of the upper surface of the housing;
The first diffusion includes a lower protrusion,
The lower protrusion is disposed in the groove of the first region of the upper surface of the housing. Board;
a semiconductor device disposed on the substrate;
a housing disposed on the substrate and disposed around the semiconductor device;
a second diffusion part disposed on the semiconductor device to be spaced apart from the semiconductor device and disposed on a first region of the upper surface of the housing;
a second light-transmitting bonding layer disposed on a second region of the upper surface of the housing;
an adhesive layer disposed between the second diffusion portion and the first region of the upper surface of the housing; and
a support disposed on a second region of the upper surface of the housing;
A side surface of the second diffusion unit includes a first inclined surface,
The semiconductor device is a surface emitting laser semiconductor device,
The upper surface area of the second diffusion unit is smaller than the lower surface area of the second diffusion unit,
An inner side surface of the second light-transmitting bonding layer is in contact with the first inclined surface of the second diffusion unit. 5. The method of claim 4,
a width of an upper region of the second diffusion unit is smaller than a width of a lower region of the second diffusion unit;
The second light-transmitting bonding layer includes a second inclined surface in contact with the first inclined surface of the second diffusion unit,
A lower end of the second inclined surface is in contact with an upper surface of the housing and an outer surface of the adhesive layer. delete delete delete delete delete

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