KR20170124930A - Substrate processing system - Google Patents

Abstract

The present invention relates to a substrate processing system. The substrate processing system comprises: a polishing part performing a chemical mechanical polishing (CMP) process with respect to a substrate; a pre-cleaning region arranged in the polishing part, and processing a pre-cleaning with respect to the substrate in which the polishing process is completed; a cleaning part cleaning the substrate in which the pre-cleaning process is performed in the pre-cleaning region; and a buffer module installed in at least one of the polishing part and the cleaning part and providing a space where the substrate is located to wait for the next process. Process efficiency is improved because a substrate processing process is continuously performed, thereby minimizing foreign substances remaining in the substrate before the cleaning process.

Description

[0001] SUBSTRATE PROCESSING SYSTEM [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing system, and more particularly, to a substrate processing system that improves process efficiency by continuously and continuously processing substrates.

As semiconductor devices are fabricated with high density integration of fine circuit lines, corresponding precision polishing has to be done on the surface of the substrate (including the wafer). In order to perform polishing of the substrate more precisely, a chemical mechanical polishing process (CMP process) in which chemical polishing as well as mechanical polishing are performed can be performed.

The chemical mechanical polishing (CMP) process is widely used for planarization to remove the height difference between the cell area and the peripheral circuit area due to the irregularities of the substrate surface generated while repeatedly performing the masking, etching, The surface of the substrate is subjected to precision polishing in order to improve the surface roughness of the substrate due to the contact / wiring film separation and highly integrated elements.

The CMP process is performed by pressing the substrate with the polishing surface of the substrate facing the polishing pad to perform chemical polishing and mechanical polishing of the polishing surface at the same time, So that a cleaning process is performed to clean the foreign substances on the polishing surface.

1, generally, the chemical mechanical polishing process of the substrate is carried out such that when the substrate W is supplied to the chemical mechanical polishing system X1 in the loading unit 20, the substrate W is transferred to the carrier head S1 P2, P1 ', P2') moving along the predetermined path (Po) in a state of being closely contacted with the polishing pad (P1, P2, P1 ', S2' Is performed. The substrate W on which the chemical mechanical polishing process has been performed is transferred to the holder 10 of the unloading unit by the carrier head S and transferred to the cleaning system X2 in which the next cleaning process is performed, A step of cleaning foreign matter adhering to the substrate W is performed in the step (70).

However, since the substrate W carried by the carrier head S has a difference between the time required for the polishing process performed in each polishing base and the time required for the cleaning process in each of the cleaning units C1 and C2, There is a problem that the process is delayed due to the failure to immediately enter the next process.

In addition, as semiconductors become finer and highly integrated, the importance of cleaning efficiency of substrates is increasing. Particularly, if foreign substances remain on the surface of the substrate even after the cleaning process of the substrate is completed in the cleaning module, the yield decreases and the stability and reliability decrease, so that the foreign substance in the cleaning module must be removed as much as possible. For this purpose, prior to transferring the substrate having been polished to the cleaning module, the substrate is preliminarily cleaned once beforehand to remove foreign substances, and then the cleaning process is performed again in the cleaning module, thereby improving the cleaning efficiency In this case, the problem that the process efficiency is lowered due to the difference between the time required for the preliminary cleaning process and the time required for the present cleaning process becomes more serious.

Accordingly, in recent years, cleaning efficiency and yield of the chemical mechanical polishing process can be improved, and various studies for reducing the cost have been made, but the development is still required.

An object of the present invention is to provide a substrate processing system in which each processing step is continuously performed without increasing the processing efficiency.

It is another object of the present invention to remove foreign matter remaining on a substrate in a preliminary cleaning region before a substrate is unloaded before a cleaning process proceeds.

At the same time, according to the present invention, since the preliminary cleaning process of the substrate on which the polishing process has been completed is performed before the present cleaning process is performed, the limitation of the substrate on which the polishing process has been completed can not be continuously inputted into the cleaning process is eliminated, And the like.

In the present invention, a substrate on which a polishing process is performed while being carried by a carrier head is directly mounted without requiring a separate robot arm or a gripper, thereby shortening the time required for unloading the substrate, And to reduce the transfer time of the substrate.

Another object of the present invention is to minimize the foreign matter remaining on the substrate before the cleaning process without changing or adding the layout of existing facilities or reducing the process efficiency.

It is another object of the present invention to continuously perform a continuous treatment process by minimizing a waiting time even in a time difference in each cleaning process in the course of performing a multistage cleaning process.

In order to achieve the above-mentioned objects of the present invention, the present invention provides a substrate processing system comprising: a polishing part for performing a chemical mechanical polishing (CMP) process on a substrate; A pre-cleaning region in which pre-cleaning is performed on the substrate on which the polishing process is completed; A cleaning part for cleaning the substrate subjected to the preliminary cleaning process in the preliminary cleaning area; A buffer module installed on at least one of the polishing part and the cleaning part to provide a space for waiting the next process by positioning the substrate; The substrate processing system according to claim 1,

This is because the polishing time and the preliminary cleaning process are performed in the polishing part of the substrate, and the required time for performing the main cleaning process of the substrate in the cleaning part is varied. However, To cause the substrate to be placed in the buffer module until an environment in which the substrate is put into the next process is provided.

As a result, in the present invention, a new process can be performed in a state where the substrate is placed on the buffer module at a time when the process components are not subjected to the process process while holding the substrate, It is possible to improve the efficiency of the process.

Here, a liquid is supplied to the substrate positioned in the buffer module to prevent the substrate from being dried by maintaining the wet state of the substrate, thereby preventing foreign matter adhering to the polishing surface of the substrate from being fixed during the polishing process, Thereby preventing damage due to mark generation.

Above all, the buffer module includes a first buffer module provided in the polishing part to receive the substrate on which the polishing process has been completed in the polishing part, when the preliminary cleaning process of the substrate is performed in the preliminary cleaning area.

Thus, by positioning the substrate in the first buffer module in a state in which the substrate on which the polishing process has been completed can not be preliminarily cleaned immediately in the preliminary cleaning area, the carrier head carrying the polishing process while moving in the state holding the substrate is immediately The polishing process can be performed without stopping the supply of the new substrate. Thereby, the polishing process in the polishing part can be performed continuously, thereby improving the process efficiency.

Here, it is preferable that the first buffer module includes a plurality of mounts for mounting a plurality of substrates.

In this case, the polishing part is configured to perform the polishing process on the polishing platen while the carrier head moves while grasping the substrate, and the first buffer module is configured to move the carrier head in a direction along which the carrier head moves and the pre- So that the distance traveled by the carrier head for mounting the substrate to the first buffer module can be shortened.

The first buffer module is configured to be able to move between the movement path of the carrier head and the pre-cleaning area, so that the first buffer module moves to the lower side of the carrier head holding the substrate after the polishing process , The carrier path can be shortened by receiving and holding the substrate directly from the carrier head.

Particularly, the cradle is configured to circulate in the vertical direction, and the first buffer module accommodates the substrate from the carrier head in a state in which one of the cradles circulating on the upper side is positioned, The process of placing the first buffer module on the first buffer module can be efficiently performed in a short time without requiring additional travel time or travel time in a very short time.

The improvement in the processing efficiency as described above is more remarkable when various polishing processes are performed in one layout as disclosed in Korean Patent Application No. 2014-173576 filed by the present applicant. For this purpose, the contents of Korean Patent Application No. 2014-173576 filed by the present applicant are incorporated herein. That is, since the supply period of the substrate transferred by the carrier head after the polishing process in the polishing part is ended depends on which polishing process is performed, even for the substrate whose polishing process has been completed at an uneven time interval from one polishing part, It is possible to obtain an advantageous effect that the process of the substrate can be continuously carried out without resting the process.

Meanwhile, in the preliminary cleaning region, the substrate on which the polishing process has been completed may be unloaded and the preliminary cleaning may proceed or the preliminary cleaning may be performed on the substrate in the buffer module.

In carrying out the cleaning on the substrate, the foreign substance remaining on the substrate is preliminarily preliminarily washed in the preliminary cleaning region where the substrate is unloaded, and then the main cleaning process of the substrate proceeds in the cleaning part, The foreign substance can be effectively removed and the cleaning efficiency of the substrate can be improved.

Particularly, by preliminarily cleaning the substrate in the preliminary cleaning region, which is provided in the polishing part and in which the substrate is unloaded, without changing or adding the layout of existing equipment, the substrate remains on the substrate before the cleaning process, It is possible to obtain an advantageous effect of minimizing foreign matter.

In other words, it is also possible to transfer the substrate to the cleaning part before the cleaning process is performed by transferring the substrate on which the polishing process has been completed to the cleaning part, carry the preliminary cleaning, and then transfer the cleaning part to the cleaning part. Since the unloaded substrate in the loading area has to be transferred to a separate cleaning area and then transferred to the cleaning part, complicated transfer process must be performed. Therefore, there is a problem in that the overall process efficiency of the substrate is lowered. There is a problem that space utilization is reduced and cost required for facility change increases because the layout of existing facilities must be changed or added. However, according to the present invention, it is possible to maintain the process order of unloading the polished substrate to the preliminary cleaning region and then transferring the substrate to the cleaning part, while preliminarily cleaning the foreign matter remaining on the substrate in the preliminary cleaning region, It is possible to obtain an advantageous effect of minimizing foreign matter remaining on the substrate before the present cleaning process proceeds without lowering the process efficiency without changing or adding the layout of existing facilities.

Furthermore, since the foreign substances remaining in the state of being not fixed to the substrate can be removed as much as possible through the preliminary process performed in the preliminary cleaning region before the cleaning process, the cleaning effect by the cleaning process can be enhanced, It is possible to obtain advantageous effects.

The preliminary cleaning in the preliminary cleaning region includes a cleaning liquid spraying portion for spraying the cleaning liquid onto the surface of the substrate, a steam spraying portion for spraying steam on the surface of the substrate, a heterogeneous fluid spraying portion for spraying the heterogeneous fluid onto the surface of the substrate, A cleaning brush that rotates and contacts the surface of the substrate, and a megasonic generator that supplies vibration energy to the surface of the substrate. The preliminary cleaning type may be selected according to the characteristics of the substrate or the deposition characteristics, It is possible to obtain an advantageous effect of performing the preliminary cleaning under the conditions.

In addition, at least one of the cleaning liquid spraying portion, the heterogeneous steam spraying portion, and the heterogeneous fluid spraying portion may be provided in an oscillating manner in the preliminary cleaning region. Such a structure allows the cleaning liquid, steam, and heterogeneous fluid to be injected into the surface of the substrate in an oscillation manner, thereby maximizing the cleaning efficiency by the cleaning liquid, steam, and heterogeneous fluid, and reducing the amount of the cleaning liquid, steam, Let's do it. In addition, in this method, foreign matter is separated from the surface of the substrate by a cleaning force (including a striking force) by a cleaning liquid, steam, and a heterogeneous fluid, and the effect of sweeping the separated foreign substances out of the substrate is obtained do.

While the preliminary cleaning is performed in the preliminary cleaning area, a blocking unit may be provided to block the preliminary cleaning processing space of the preliminary cleaning area from other spaces. The blocking unit blocks the preliminary cleaning processing space of the preliminary cleaning region from other spaces so that the chemical and cleaning liquid used for preliminary cleaning can be prevented from being introduced into the substrate on which the polishing process is performed.

And, a blocking unit for selectively blocking the polishing part area and the cleaning part area can be provided. The shielding unit can prevent the abrasive material and foreign matter generated in the polishing part area from being flowed into the cleaning part area, thereby enabling the cleaning part area to maintain a cleaner processing environment, and in particular, the chemical used in the preliminary cleaning processing space In the case of floating in this polishing part, uneven polishing of the substrate may be carried out. Therefore, it is possible to obtain a cleaning effect using a chemical in the preliminary cleaning area located in the polishing part.

That is, a relatively large amount of foreign matter is generated in the polishing part area as compared with the cleaning part area, and if foreign matter generated in the polishing part area flows into the cleaning part area, a cleaning error or cleaning deterioration due to foreign matter may occur. In this case, the opening / closing member blocks the boundary between the polishing part area and the cleaning part area as a whole so that the abrasive material and the foreign matter generated in the polishing part area are shut off from flowing into the cleaning part area, So that the cleaning efficiency of the cleaning process can be increased.

The polishing part may include a first polishing area in which a plurality of first polishing plates are disposed, a second polishing area in which a plurality of second polishing plates are arranged facing the first polishing area, And a substrate transfer line disposed between the polishing regions for transferring a substrate loaded to a loading region provided in the polishing portion, wherein the substrate loaded in the loading region is transferred along the substrate transfer line to form a first polishing region or a second polishing region And then unloaded to the preliminary cleaning area.

Thus, the present invention provides a method of transferring a substrate from a first substrate to a second substrate by transferring the substrate along the substrate transfer line first and then polishing the substrate in the first or second polishing region and then immediately unloading the substrate in the pre- It is possible to exclude a separate jetting device for maintaining the wet state and to prevent the occurrence of watermarks.

In other words, it is also possible to first polish the substrate in the first polishing area or the second polishing area, transfer the polished substrate along the substrate transfer line and unload it in the preliminary cleaning area, (Wet state) of the substrate is inevitably formed on the substrate transfer line because there is a problem that the substrate on which polishing is completed is dried while being conveyed along the substrate transfer line and water marks are generated or the mounted components of the substrate are damaged, A separate spraying device or wetting bath should be provided to maintain the spraying device. However, in the present invention, the substrate is first transferred through the substrate transfer line provided at the center between the first polishing area and the second polishing area, the substrate is polished in the first polishing area or the second polishing area, Since the substrate is immediately unloaded to the preliminary cleaning region, it is possible to prevent the substrate from being dried after the polishing process is completed, even if a facility for wetting the substrate is not separately provided, Can be obtained.

The cleaning part physically contacts the surface of the substrate and performs the cleaning so as to effectively perform cleaning for removing organic matter and other foreign matter remaining on the surface of the substrate, And a non-contact type cleaning unit that is non-contact and performs cleaning. The contact type cleaning unit can physically contact the surface of the substrate with a direct contact with the surface and can remove a foreign substance which is relatively large in size or strongly stuck to the surface of the substrate and the noncontact type cleaning unit ejects a fluid to the substrate, It is possible to remove minute foreign matter.

More specifically, the contact type cleaning unit may be provided with a cleaning brush and a chemical supply unit. The noncontact type cleaning unit may include a cleaning fluid jetting unit (a cleaning liquid jetting unit, a steam jetting unit, a heterogeneous fluid jetting unit), an isopropyl alcohol jetting unit, The substrate can be cleaned using at least one of the sonic generators.

In addition, the present invention may include an inverting unit provided movably in the pre-cleaning area in the loading area where the substrate provided in the polishing part is loaded and transferring the substrate from the loading area to the pre-cleaning area, And can be pre-cleaned in the pre-cleaning area while being supported by the unit.

Thus, the substrate in which the polishing process is completed in the polishing part, is transferred from the carrier head for transferring the substrate in the polishing part to the reversing unit after the substrate is transferred to the buffer module; A second mode in which the polishing head directly transfers the substrate from the carrier head to the reversing unit; The substrate can be transferred to the inverting unit.

Particularly, by allowing the substrate to be transferred to the pre-cleaning area after the substrate is received in the reversing unit in the loading area of the substrate formed on the movement path of the transfer unit (for example, the carrier head), the transfer unit moves to the pre- It is only necessary to move to the loading area without needing to obtain an advantageous effect of minimizing the movement path of the transfer unit.

Specifically, the inversion unit includes a movable assembly moving from the loading area to the pre-cleaning area, a rotating assembly rotatably connected to the movable assembly, and a grip assembly coupled to the rotating assembly and gripping the substrate .

Alternatively, the reversal unit may be fixed to the preliminary cleaning area, and the reversal unit may be configured to receive the substrate in the preliminary cleaning area and to invert the substrate.

Further, the pre-cleaning in the pre-cleaning area allows the substrate to be carried while being supported by the inversion unit, thereby simplifying the supporting process of the substrate to be performed so that the substrate does not move during the pre-cleaning in the pre-cleaning area An advantageous effect can be obtained.

Of course, it is also possible to carry out the preliminary cleaning by supporting the substrate by a separate supporting means (mounting means) in the preliminary cleaning region, but by allowing the substrate to be supported during the inversion process of the substrate which is inevitably performed irrespective of the preliminary cleaning , The process of supporting the substrate is simplified, and an advantageous effect of reducing the overall process can be obtained.

For example, the preliminary cleaning in the preliminary cleaning region proceeds in a state in which the substrate is reversely rotated by the reversal unit (a state in which the polishing surface is inverted so as to face upward), or in a state in which the substrate is arranged vertically by the reversal unit Or the substrate may be supported by the inversion unit before the substrate is inverted by the inversion unit (the polishing surface of the substrate is arranged so as to face downward).

The cleaning part may be configured to include a plurality of cleaning units stacked along the vertical direction and performing cleaning on the substrate individually. By arranging the plurality of cleaning units stacked in this manner, it is possible to obtain an advantageous effect of reducing the footprint of the cleaning part and improving space efficiency.

Here, the plurality of cleaning units are stacked along the vertical direction is defined as a plurality of cleaning units stacked in a two-layer structure or a three-layer structure or more.

As an example, the cleaning unit may include a plurality of contact type cleaning units stacked in the vertical direction and physically contacting the surface of the substrate and individually cleaning the substrate, and a plurality of contact type cleaning units stacked vertically, And a plurality of non-contact cleaning units physically contacting the surface and performing cleaning on the substrate individually. In some cases, it is also possible to provide only one of the contact type cleaning unit and the non-contact type cleaning unit in a laminated structure.

In addition, the cleaning part is provided with a transfer unit for transferring the substrate from any one of the plurality of cleaning units to the other of the plurality of cleaning units, and the substrate is transferred in the cleaning part by the transfer unit.

Therefore, when the substrate cleaning process is performed in the first cleaning unit, which is one of the plurality of cleaning units, the buffer module is provided with a second buffer, which is provided in the cleaning part, to receive the substrate to be supplied to the first cleaning unit Module. ≪ / RTI > As a result, it is possible to position the substrate, which has not yet been held in the cleaning unit by the cleaning time deviation of the plurality of cleaning units, in the second buffer module in each of the cleaning units, The process can be carried out.

Particularly, the plurality of stacked cleaning units include: a contact type cleaning unit stacked in a vertical direction in one footprint area; A non-contact type cleaning unit stacked in a vertical direction on another one of the footprint areas; And the like. Generally, the processing time required for cleaning in the contact type cleaning unit and the contact type cleaning unit will vary.

Therefore, it is preferable that the second buffer module is disposed between the non-contact type cleaning unit and the contact type cleaning unit. According to another embodiment of the present invention, the second buffer module may be arranged between the respective cleaning units, or may be movably installed like the first buffer module. The second buffer module may be stacked on the footprint area occupied by either the non-contact type cleaning unit or the contact type cleaning unit, and may be mounted on the substrate without occupying a separate area.

In addition, the second buffer module includes a plurality of mounts for mounting the plurality of substrates.

At this time, the substrate can be cleaned along various cleaning paths defined in the cleaning part. Here, the cleaning path of the substrate is understood as a sequence in which the substrate is cleaned in the cleaning part or a path in which the substrate is transported and cleaned.

More specifically, the substrate is configured to be cleaned along a cleaning path through at least one of the plurality of cleaning units in the cleaning part. Preferably, the cleaning efficiency of the substrate can be increased by configuring the cleaning path of the substrate to pass through at least any one of the plurality of contact type cleaning units and the plurality of non-contact type cleaning units.

Alternatively, an advantageous effect of minimizing the cleaning path can be obtained by skipping at least one of the plurality of cleaning units previously set in the cleaning path of the substrate. Herein, it is understood that at least one of the plurality of cleaning units, which is preset, is excluded from the cleaning path of the substrate, is cleaned without going through the specific cleaning unit in which the substrate is removed from the cleaning part.

In each case, the second buffer module places the substrate, which needs to wait to perform the next process (including the cleaning process), in the plurality of cleaning units.

In addition, the plurality of cleaning units constituting the cleaning part may include a blocking unit that blocks the respective cleaning spaces independently of the other spaces. As a result, it is possible to obtain an effect of preventing a cleaning error and a cleaning deterioration due to fume generated during cleaning of the substrate into the cleaning space of another adjacent cleaning unit.

For reference, the 'preliminary cleaning' of the substrate in the present invention means a cleaning process which is performed for the first time on the polished substrate, and a cleaning process for primarily cleaning the foreign substances existing on the surface of the substrate before cleaning Process.

In the present invention, the cleaning with the cleaning part can be understood as a finishing cleaning process for cleaning the foreign matter remaining on the surface of the substrate after the preliminary cleaning has proceeded.

As described above, according to the present invention, it is possible to obtain an advantageous effect that each processing step can be performed continuously without interruption by improving the processing efficiency of the substrate.

Particularly, according to the present invention, by preliminarily cleaning the foreign matter remaining on the substrate in the pre-cleaning region where the substrate is unloaded, the main cleaning process of the substrate proceeds in the cleaning part, It is possible to obtain an advantageous effect of improving the cleaning efficiency of the substrate.

In other words, it is also possible to transfer the substrate to the cleaning part before the cleaning process is performed by transferring the substrate on which the polishing process has been completed to the cleaning part, carry the preliminary cleaning, and then transfer the cleaning part to the cleaning part. Since the unloaded substrate in the loading area must be transferred to a separate cleaning area and then transferred to the cleaning part, the overall process efficiency of the substrate is lowered, and a separate cleaning area is additionally provided There is a problem that space utilization is reduced and cost required for facility change increases because the layout of existing facilities must be changed or added. However, according to the present invention, it is possible to maintain the process order of unloading the polished substrate to the preliminary cleaning region and then transferring the substrate to the cleaning part, while maintaining the preliminary cleaning region in which the substrate is unloaded, It is possible to obtain an advantageous effect of minimizing the foreign substances remaining on the substrate before the present cleaning process proceeds without lowering the process efficiency without changing or adding the layout of existing facilities.

Furthermore, according to the present invention, by preliminarily cleaning the substrate in the pre-cleaning area where the substrate is unloaded without changing or adding the layout of the existing facility, it is possible to prevent the foreign matter remaining on the substrate before the cleaning process It is possible to obtain an advantageous effect of minimization.

The present invention also provides a method of removing foreign substances remaining on a substrate in a preliminary cleaning region before a cleaning process is performed, It is possible to inject the carrier head into the polishing process of the substrate, and it is possible to obtain an advantageous effect of further increasing the number of substrates that can process the polishing process per unit time.

Further, even if a plurality of polishing processes are performed in one layout, even if the supply period of the substrate to be polished is changed, the process of being introduced into the cleaning process through the preliminary cleaning process continuously and continuously is improved to improve the process efficiency .

In addition, according to the present invention, by arranging a plurality of cleaning units constituting a cleaning part in a multilayer structure in a laminated structure, it is possible to obtain an advantageous effect of reducing the footprint of the cleaning part and improving the space efficiency.

Among other things, the present invention realizes a structure in which a substrate carried by a carrier head can be directly mounted on a buffer module without an arm or a gripper, thereby shortening the time required for unloading the substrate, .

That is, according to the present invention, various polishing processes are performed in one layout, and in the process of performing the preliminary cleaning process and the multi-stage cleaning process, the waiting time is minimized even in the time difference in each process process, And an advantageous effect of increasing the process efficiency can be obtained.

Therefore, according to the present invention, it is possible to reduce the cost of cleaning the substrate, and improve the process efficiency and yield.

In addition, according to the present invention, since various preliminary cleaning methods can be adopted according to the type and characteristics of the substrate, it is possible to effectively remove the foreign substances fixed on the surface of the substrate and to obtain an advantageous effect of improving the cleaning efficiency .

Further, according to the present invention, since foreign matter remaining on the substrate can be minimized, the defective rate of the substrate can be minimized, and an advantageous effect of improving stability and reliability can be obtained.

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 shows the construction of a conventional chemical mechanical polishing equipment,
2 shows a substrate processing system according to the present invention,
3 is a view for explaining a substrate mounting part and a cleaning fluid jetting part according to the present invention,
FIG. 4 is a view showing a cleaning liquid jetting unit, which is a substrate processing system according to the present invention,
FIG. 5 is a view showing a heterogeneous fluid ejection unit, which is a substrate processing system according to the present invention,
FIG. 6 is a view showing another example of a heterogeneous fluid ejecting part, according to the present invention,
FIG. 7 is a diagram for explaining the oscillation function of the heterogeneous fluid injection unit, which is a substrate processing system according to the present invention;
FIG. 8 is a view showing a steam spraying unit as a substrate processing system according to the present invention,
9 and 10 are diagrams showing still another example of a heterogeneous fluid ejection unit, which is a substrate processing system according to the present invention,
11 is a view showing a cleaning brush, which is a substrate processing system according to the present invention,
12 shows a substrate processing system according to the present invention,
13 is a view showing the first cleaning brush of the contact type cleaning unit,
14 and 15 are diagrams for explaining a foreign matter removing unit of the contact type cleaning unit as a substrate processing system according to the present invention,
16 is a view showing a pressing member of the contact type cleaning unit as a substrate processing system according to the present invention,
17 is a view for explaining a frictional force adjusting unit of the contact type cleaning unit, which is a substrate processing system according to the present invention,
18 is a view for explaining a vertical load control unit of the contact type cleaning unit, which is a substrate processing system according to the present invention,
19 is a view showing a second cleaning brush of the contact type cleaning unit, which is a substrate processing system according to the present invention,
20 is a view showing a configuration of a first buffer module, which is a substrate processing system according to the present invention,
Figure 21 is a view showing a configuration in which a substrate is seated from a carrier head in a holder of a first buffer module,
Fig. 22 is a view for explaining an inversion unit of the substrate processing system of Fig. 2,
23 is a view for explaining the operation of the inversion unit by the substrate processing system of FIG. 2,
FIG. 24 is a front view of the pre-cleaning area and the cleaning part of the substrate processing system of FIG. 2;
Figure 25 shows a second buffer module of the substrate processing system of Figure 2,
26 to 28 are diagrams showing a cleaning process of a cleaning part of the substrate processing system of FIG. 2,
29 is a view for explaining a packing member of a cut-off unit of the substrate processing system of FIG. 2,
30 to 33 are views for explaining the structure and operating structure of the holder and the collection container of the non-contact type cleaning unit, respectively, as the substrate processing system according to the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments. For reference, the same numbers in this description refer to substantially the same elements and can be described with reference to the contents described in the other drawings under these rules, and the contents which are judged to be obvious to the person skilled in the art or repeated can be omitted.

Referring to FIG. 2, a substrate processing system 1 according to the present invention includes a polishing part 100 for performing a chemical mechanical polishing (CMP) process on a substrate, a polishing part 100 provided on the polishing part 100, A cleaning part 300 for cleaning the substrate preliminarily cleaned in the preliminary cleaning area P1 and a cleaning part 300 for cleaning the substrate preliminarily cleaned in the preliminary cleaning area P1, And a buffer module (B) installed in at least one of the cleaning part (300) and the cleaning part (300) to provide a space for waiting the next process.

The polishing part 100 may be provided in various structures capable of performing a chemical mechanical polishing process, and the present invention is not limited or limited by the structure and layout of the polishing part 100.

The polishing part 100 is provided with a plurality of polishing platens 110, and a polishing pad is attached to the upper surface of each polishing platen 110. The substrate 10 supplied to the loading unit provided on the area of the polishing part 100 is brought into rolling contact with the upper surface of the polishing pad supplied with the slurry in tight contact with the carrier head 120 moving along a predetermined path A chemical mechanical polishing process is performed.

The carrier head 120 can move along a predetermined circulation path on the polishing part 100 area and the substrate 10 supplied to the loading unit (hereinafter referred to as the substrate supplied to the loading position of the substrate) The carrier head 120 can be transported in a state of being closely contacted with the carrier head 120. Hereinafter, an example will be described in which the carrier head 120 is configured to move from a loading unit to a circulating path of a substantially rectangular shape through the polishing platen 110. [

For example, the polishing part 100 includes a first polishing area 101 in which a plurality of first polishing tables 110 are disposed, a plurality of second polishing tables 110 ' And a substrate 10 placed between the first polishing area 101 and the second polishing area 102 and loaded in a loading area P2 provided in the polishing part 100, And a substrate 10 loaded on the loading region P2 is transferred along the substrate transfer line 104 to form a first polishing region 101 or a second polishing region 102, And then unloaded to the preliminary cleaning area P1.

The substrate transfer line 104 is provided in the center between the first polishing area 101 and the second polishing area 102 so that the substrate 10 loaded in the loading area P2 is moved along the substrate transfer line 104 So that it can enter the first polishing area 101 or the second polishing area 102 after being transferred.

As such, the present invention provides a method of transferring a substrate 10 first along a substrate transfer line 104, and after the substrate 10 has been polished in a first polishing region 101 or a second polishing region 102, It is possible to obtain a favorable effect of preventing generation of watermarks by eliminating a separate jetting device for maintaining the wet state of the polished substrate 10 by unloading the wafer W in the cleaning region P1 have.

In other words, it is also possible to first polish the substrate in the first polishing area or the second polishing area, transfer the polished substrate along the substrate transfer line and unload it in the preliminary cleaning area, In the structure (see FIG. 26), there is a problem that the polished substrate is dried while being conveyed along the substrate transfer line, and watermarks are generated or the mounted components of the substrate are damaged. Inevitably, A separate jetting device or wetting bath should be provided to maintain the state (wet state). However, in the preferred embodiment of the present invention, the substrate 10 is first transferred through the substrate transfer line 104 provided at the center between the first and second polishing regions 101 and 102, The substrate 10 is polished in the region 101 or the second polishing region 102 and then the substrate 10 having been polished is immediately unloaded to the preliminary cleaning region P1, The substrate 10 on which the polishing process has been completed can be prevented from being dried and a favorable effect of preventing damage to the substrate mounting components due to drying and defects due to watermarks can be obtained.

The polishing part 100 includes a transfer unit for transferring the substrate 10 that has entered the loading area of the polishing part 100 to the polishing platen 110 and a transfer unit for transferring the substrate 10 A cleaning unit for cleaning the loading surface of the transfer unit may be provided.

A carrier unit 120 may be used as the transfer unit and the cleaning unit may be configured to allow the loading surface to be pre-cleaned before the carrier head 120 loads the substrate 10, So that the substrate 10 can be prevented from being contaminated or damaged before it is polished. In addition, the cleaning unit is disposed at a position where the substrate 100 is not disturbed while the substrate 100 is loaded in the loading area of the polishing part 100, and then moved to the loading area after the substrate 100 is loaded in the loading area. .

The cleaning unit may be provided with various structures capable of cleaning the loading surface of the transfer unit (e.g., the carrier head), and the present invention is not limited or limited by the structure of the cleaning unit and the cleaning method. For example, as disclosed in Korean Patent Registration No. 10-1130888, the polishing surface of the substrate 10 in the polishing part is arranged to face downward, the cleaning unit is arranged in the vertical direction And a plurality of wash water nozzles capable of spraying wash water upwardly along the wash water nozzle. Preferably, the cleaning unit is rotatably provided with respect to the center of the transfer unit in a state in which the cleaning unit is disposed under the transfer unit.

2 and 3, the preliminary cleaning area P1 is provided on the area of the polishing part 100 so that the substrate 10 on which the polishing process is completed is unloaded, and the preliminary cleaning (pre-cleaning).

For reference, preliminary cleaning of the substrate 10 in the present invention refers to preliminary cleaning of the substrate 10 to the extent that the foreign substance present on the surface of the substrate 10 (particularly, the polishing surface of the substrate) . ≪ / RTI > Particularly, in the preliminary cleaning of the substrate 10, it is possible to remove a relatively large foreign matter (for example, a foreign matter having a size larger than 100 nm) among the foreign matters existing on the surface of the substrate 10, Organic matter present on the surface can be removed.

As described above, since the substrate 10 on which the polishing process has been completed in the preliminary cleaning region P1 is unloaded and preliminary cleaning is performed, there is no need to additionally provide a separate space for advancing the preliminary cleaning, The layout of the equipment can be maintained almost unchanged without changing or adding the layout of the equipment, and the increase in contamination degree of the cleaning part 300 due to the direct entry of the polished substrate 10 directly into the cleaning part can be reduced.

More preferably, a blocking unit may be provided to block the pre-cleaning processing space of the pre-cleaning area P1 from the other spaces while the pre-cleaning is performed in the pre-cleaning area P1. Here, the preliminary cleaning processing space of the preliminary cleaning area P1 can be understood as a space where preliminary cleaning is performed, and the preliminary cleaning processing space can be provided as an independently closed chamber structure by the blocking unit.

The blocking unit may be provided in various structures capable of providing an independent closed space that is shielded from the outside. 3, the shielding unit includes a casing 210 provided to surround the periphery of the substrate 10 and providing an independent preliminary cleaning processing space, an opening / closing member 212 for opening / closing the entrance of the casing 210 ) Will be described as an example.

For example, the casing 210 may be provided in the form of a substantially square box having an entrance at an upper end thereof, and the opening and closing member 212 may be provided by a conventional driving unit 214 (for example, a combination of a motor and a power transmitting member) And may be configured to open and close an entrance of the casing 210 by moving linearly. In some cases, it is possible to form an entrance in the side wall of the casing, and the opening and closing member moves along the vertical direction to open and close the entrance.

The substrate cleaning apparatus may further include a substrate mounting unit 220 horizontally mounted on the upper portion of the preliminary cleaning area P1 and rotatably mounted on the rotation shaft 221 in the casing 210 .

For reference, in the present invention, the substrate holder 220 is a mounting means capable of holding the substrate 10 in a state where the substrate 10 can be unloaded and the preliminary cleaning is proceeding .

For example, a mounting pin 224 on which the bottom surface of the substrate 10 is mounted may be formed on the upper surface of the substrate mounting portion 220. A plurality of mounting pins 224 may be formed on an upper surface of a spin jig plate (not shown) forming a substrate mounting portion 220 so as to be spaced apart from each other by a predetermined distance. As shown in FIG. The number and arrangement of the mounting pins 224 can be variously changed according to the required conditions and design specifications.

In addition, the substrate mounting part 220 may include an edge mounting part 222 on which the edge of the substrate 10 is mounted. For example, the substrate holder 220 may be connected to the spin jig plate to support the edge of the substrate 10. Preferably, a recessed portion (not shown) for receiving and supporting the outer circumferential end of the substrate 10 may be formed on the substrate mounting portion 220 so as to prevent the substrate 10 from swinging during high-speed rotation. A cover member 226 is provided between the casing 210 and the substrate mounting part 220 to prevent splashing of the cleaning liquid scattered from the substrate 10 by the centrifugal force generated by the rotation of the substrate mounting part 220 . In some cases, it is also possible that the substrate mounting portion is formed in a simple plate shape without a mounting pin or an edge mounting portion.

The preliminary cleaning in the preliminary cleaning area P1 can be carried out in various cleaning methods according to the required conditions and design specifications.

For example, in the preliminary cleaning region P1, a cleaning fluid jetting portion 201 for performing preliminary cleaning by jetting a cleaning fluid onto the surface of the substrate may be provided.

Herein, the cleaning fluid may be understood as a concept including all of the substances to be sprayed which are sprayed on the surface of the substrate, such as a cleaning liquid, steam, heterogeneous fluid, etc., and can perform preliminary cleaning. The invention is not limited or limited.

4, the cleaning fluid spraying unit 201 may be provided in the pre-cleaning area P1 and may include a cleaning liquid spraying unit 230 for spraying a cleaning liquid onto the surface of the substrate 10. [

The cleaning liquid spraying unit 230 may be configured to spray various cleaning liquids onto the surface of the substrate 10 according to the required conditions. For example, the cleaning liquid spraying unit 230 may be configured to spray at least one of SC1 (Standard Clean-1, APM), ammonia, sulfuric acid, hydrogen peroxide, and DIW. Particularly, in the present invention, since the preliminary cleaning processing space of the preliminary cleaning area P1 is independently provided in a closed chamber structure, it is possible to use a chemical such as SC1 as a cleaning liquid, A part of the organic substance existing on the surface of the substrate 10 is preliminarily removed before the main cleaning process described later by the preliminary cleaning using the chemical, while preventing the chemical from scattering from the region P1 into the polishing part to inhibit the polishing process It is possible.

5 and 6, the cleaning fluid spraying unit 201 is provided in the pre-cleaning region P1 and includes a heterogeneous fluid spraying unit 240 for spraying heterogeneous fluids on the surface of the substrate 10 ).

The heterogeneous fluid injecting section 240 may be provided with various structures capable of injecting heterogeneous fluids. For example, the disparate fluid ejection unit 240 may include a first fluid supply unit 241 for supplying a first fluid and a second fluid supply unit 242 for supplying a second fluid different from the first fluid, The first fluid and the second fluid may be injected onto the surface of the substrate 10 by a jetting means such as a conventional nozzle in a mixed or separated state.

5, the disparate fluid ejection portion 240 may include a first fluid ejection nozzle 241 and a second fluid ejection nozzle 242 that are provided independently, and the first fluid ejection nozzle and the second fluid ejection nozzle In the second fluid injection nozzle, the first fluid and the second fluid may be sprayed on the surface of the substrate 10 in a state where they are separated from each other.

As another example of the heterogeneous fluid injecting section 240, the heterogeneous fluid injecting section 240 includes a first fluid passage 241 'to which a first fluid is supplied, a second fluid passage 241' to which a second fluid is supplied, And a mixed injection path 243 'in which a first fluid and a second fluid are mixed and injected. In the mixed injection path 243', a first fluid and a second fluid are mixed with each other And can be sprayed to the surface of the substrate 10 at a high speed.

The kind and characteristics of the heterogeneous fluid that can be injected from the heterogeneous fluid injecting section 240 can be variously changed according to required conditions and design specifications. In one example, the first fluid may be either a gaseous fluid or a liquid-phase fluid, and the second fluid may be either a gaseous fluid or a liquid-phase fluid. For example, the heterogeneous fluid injecting unit 240 may be configured to inject pure water (DIW), which is a liquid fluid, and nitrogen (N ₂ ), which is a gaseous fluid, together so as to increase the efficiency of removing foreign substances. In some cases, it is possible to use two different kinds of liquid fluids or two different kinds of vapor fluids as long as the efficiency of removing foreign matter and foreign matter by the different fluids can be ensured.

In addition, it is preferable that the cleaning liquid and / or the heterogeneous fluid sprayed from the cleaning liquid spraying unit 230 and the heterogeneous fluid spraying unit 240 are sprayed at a high pressure so that foreign substances present on the surface of the substrate 10 can be hit with a sufficient hitting force Do.

7, at least one of the cleaning liquid injecting unit 230 and the heterogeneous fluid injecting unit 240 is provided so as to be capable of oscillating with respect to the surface of the substrate 10 so that the cleaning liquid and / And may be configured to oscillate spray the fluid onto the surface of the substrate 10.

At least one of the washing liquid injecting section 230 and the heterogeneous fluid injecting section 240 can be provided in various ways in accordance with the required conditions and design specifications. Hereinafter, a description will be given of an example in which the cleaning liquid and / or the heterogeneous fluid can be oscillated on the surface of the substrate 10 by swinging the cleaning liquid spraying unit 230 and the heterogeneous fluid spraying unit 240 . Such a structure allows the cleaning liquid and / or the heterogeneous fluid to be injected into the surface of the substrate 10 in an oscillation manner, thereby maximizing the cleaning efficiency by the cleaning liquid and / or the heterogeneous fluid and improving the cleaning efficiency of the cleaning liquid and / . In this manner, the foreign matter is separated from the surface of the substrate 10 by the cleaning force (including the striking force) by the cleaning liquid and / or the dissimilar fluid, and the separated foreign matter is swept out to the outside of the substrate 10 So that the effect can be obtained.

8, the cleaning fluid spraying unit 201 is provided in the preliminary cleaning area P1 and includes a steam spraying unit 250 for spraying steam generated from the steam generating unit 252 on the surface of the substrate 10 250).

Particularly, the steam injected from the steam spraying unit 250 is effective for removing organic substances existing on the surface of the substrate 10. [ For reference, the steam injector 250 may be configured to inject steam at a temperature that can prevent damage to the substrate 10 while ensuring the efficiency of organic matter removal by steam. Preferably, the steam injector 250 can inject steam at a temperature of 60 ° C to 120 ° C.

The steam injecting unit 250 is also provided in an oscillatable manner with respect to the surface of the substrate 10 so that the steam is injected into the surface of the substrate 10 in the same manner as in the washing liquid injecting unit 230 and the dissimilar fluid injecting unit 240, (See Figure 7).

9 and 10, the cleaning fluid spraying unit 201 is provided in the pre-cleaning area P1 and includes a heterogeneous fluid spraying unit 260 for spraying different kinds of fluids onto the surface of the substrate 10 The heterogeneous fluid injecting section 260 may include a dry ice supplying section for supplying the dry ice particles and a fluid injecting section for spraying the fluid on the surface of the substrate 10. [

The fluid ejection portion may be configured to eject various fluids according to the required conditions and design specifications. In one example, the fluid ejection portion may be configured to eject at least one of a gaseous fluid and a liquid fluid. Hereinafter, an example in which the heterogeneous fluid jetting section is configured to jet the vapor phase fluid 261a together with the dry ice particles will be described. In some cases, the heterogeneous fluid jetting section may be configured to inject a liquid fluid (for example, DIW) together with the dry ice particles.

The fluid ejection portion may be provided in various structures capable of mixing and spraying the fluid with the dry ice particles 262a. For example, the fluid injecting portion may include a gaseous fluid supply passage 261 to which a gaseous fluid is supplied, a dry ice supply passage 262 to which dry ice is supplied, a gaseous fluid 261a and dry ice particles 262a to mix and spray And a discharge body discharge passage 263 which is formed in the discharge passage.

Hereinafter, an example will be described in which the dry ice supplied through the dry ice supply passage 262 is supplied as liquid carbon dioxide and passes through the discharge body discharge passage 263 to be solidified into dry ice solid particles.

To this end, the gaseous fluid supply passage 261 is provided with a first end face constant region S1 having a constant cross-section along the flow direction of the gaseous fluid 261a, and a second end face portion 261a gradually decreasing in section along the flow direction of the gaseous fluid 261a Sectional reduction area S2 and a part of a second sectional area S31 having a constant section along the flow direction of the vapor phase fluid 261a.

Accordingly, the gaseous fluid 261a passes through the first end face section S1 and the flow is stabilized. As the pressure fluid passes through the end face decrease area S2, the pressure gradually decreases to increase the flow velocity of the gas. The flow is stabilized while passing through a part of the step S31. At this time, as the outlet of the branch passage (dry ice supply passage) is formed at the first point (X1), which is a predetermined distance from the point where the second sectional area S31 starts, through the vapor phase fluid supply passage 261 The supplied compressed gas passes through the cross sectional reduction area S2 and the flow velocity becomes faster and the flow starts to pass through the second sectional area S31 and the flow becomes stable.

In this state, the liquid state high-pressure carbon dioxide flows into the first position (X1) of the second cross-sectional area through the branch passage (dry ice supply passage), and the liquid state carbon dioxide flows into the second cross- When the pressure reaches the predetermined area S31, the pressure is reduced and solidified into dry ice solid particles.

On the other hand, the gas supply unit may be configured to supply at least one of inert gas such as air, nitrogen gas, and argon gas through the gaseous fluid supply passage 261. When the inert gas is supplied through the gas phase fluid supply passage 261, the chemical reaction is suppressed on the substrate 10, so that the cleaning effect can be enhanced.

The branch passage is formed at an acute angle with respect to the gaseous fluid supply passage 261 through which the gaseous fluid is supplied along the straight line centerline, with the same directional component as the gas flow direction along the gaseous fluid supply passage 261. As a result, the liquid carbon dioxide flowing through the branch passage smoothly flows into the first position X1 at the end of the gaseous fluid supply passage 261.

As an example, the branch passage (dry ice supply passage) is supplied with liquid carbon dioxide from a high pressure tank of 40 to 60 bar. The pressure of the liquid state carbon dioxide injected into the branch passage is also kept high. Accordingly, as soon as the liquid carbon dioxide supplied through the branch passage joins the gaseous fluid supply passage 261 at the first position X1, the pressure of the carbon dioxide in the high pressure state is lowered from the high pressure to the low pressure, Carbon dioxide in the solid state solidifies into dry ice.

Further, instead of supplying dry ice particles in a solid state through the branch passage, liquid carbon dioxide is supplied through the branch passage so that carbon dioxide in the liquid state reaches the low-pressure vapor phase supply passage 261, So that they are uniformly mixed while passing through the discharge passage together with the gas flow that has flowed through the gaseous fluid supply passage 261.

The cross section of the branch passage is formed to have a smaller cross section than the gaseous fluid supply passage 261 and the size of the dry ice particles solidified at the first position X1 can be adjusted by adjusting the cross sectional size of the branch passage. For example, the diameter of the dry ice particles may be in the range of 100 to 2000 mu m.

The discharge body discharge passage 263 is disposed in the form of a straight line continuous with the gaseous fluid supply passage 261. In the first position X1 communicating with the branch passage, the liquid state carbon dioxide supplied through the branch passage is solidified The dry ice particles are combined with the vapor phase fluid to form a jet body. The gaseous fluid supplied from the gaseous fluid supply passage 261 and the branch passage and the flow pressure of the carbon dioxide move toward the discharge port and are discharged.

At this time, the discharge region S3 through which the jet is discharged includes a second sectional area S31 having a section maintained constant along the flow direction, a sectional enlarged area S32 having a section gradually expanded along the flow direction, . Thereby, at the first position X1 of the second section constant region S31, the fine dry ice solid particles uniformly spread in the stagnant gas flow and pass through the discharge region S3. Therefore, the gaseous fluid and the fine dry ice solid particles are discharged in a uniformly mixed state to the jetting body discharged from the discharge port.

Particularly, the vapor-phase fluid having a faster flow velocity in the cross-sectional reduction area S2 passes through the cross-sectional enlarged region, and the gas expands to lower the temperature, so that the temperature of the discharged gasket can be lowered. Therefore, since the substrate 10 is cooled by the jetting body striking the surface of the substrate 10, the fine particles falling off the substrate 10 due to the thermo-phoresis effect during the cleaning of the substrate 10 (Foreign particle) floating around the substrate 10 and reattached to the substrate 10 can be suppressed.

As described above, the heterogeneous fluid spraying unit 240 for spraying the fluid with the dry ice can cleanly remove various sludges fixed on the surface of the substrate 10 subjected to the chemical mechanical polishing process in a shorter time, It is possible not only to shorten the cleaning process time but also to reduce the amount of chemical for removing the foreign matter adhering to the surface of the substrate 10.

On the other hand, in the embodiment of the present invention, carbon dioxide in the liquid state is solidified to supply dry ice solid particles. However, in some cases, the solidified dry ice solid particles may be supplied through the dry ice supply passage . In addition, it is also possible to form the slit-like discharge port having a long length to have the discharge port.

In addition, a heterogeneous fluid injecting unit 260 for spraying the dry ice and the fluid together is also provided so as to be oscillatable with respect to the surface of the substrate 10 so as to oscillate the dry ice and the fluid onto the surface of the substrate 10 (See Figure 7).

In addition, although the embodiment of the present invention has been described by way of example in which the heterogeneous fluid jetting section for spraying the fluid with the dry ice includes the gaseous fluid supply passage, the branch passage and the discharge passage, the cleaning fluid or the chemical may, It is possible to configure to jet at a high speed by the same or similar structure as the disparate fluid ejecting portion including the supply passage, the branch passage and the discharge passage.

In addition, even in the case of a heterogeneous fluid injection portion in which a gaseous fluid and a liquid fluid (or two gaseous fluids or two liquid fluids) are injected, it is possible to apply the same or similar injection structure to a heterogeneous fluid injection portion that injects fluid with dry ice Do. For example, the dissimilar fluid injecting unit that injects the gaseous fluid and the liquid-phase fluid has a cross-sectional reduction area that gradually increases in cross-section along the flow direction of the gas to increase the flow rate of the gas and a third area A gas supply passage (see 261 in Fig. 9), and a liquid supply passage (see 262 in Fig. 9) for joining the liquid to the gas supply passage at a first position close to the discharge port.

Referring to FIG. 11, the cleaning brush 280 may be provided on the surface of the substrate 10 in the pre-cleaning area P1.

As the cleaning brush 280, a brush made of an ordinary material (for example, polyvinyl alcohol of a porous material) capable of being brought into frictional contact with the surface of the substrate 10 may be used. In addition, a plurality of cleaning protrusions for improving the contact property of the brush can be formed on the surface of the cleaning brush 280. Of course, it is also possible to use a brush having no cleaning protrusion in some cases.

While the cleaning brush 280 is in contact with the substrate 10 so as to enhance the cleaning effect of the cleaning brush 280 and the substrate 10 due to frictional contact while the cleaning brush 280 is being cleaned, And a chemical supply unit 230 for supplying a chemical to a contact portion between the cleaning brush 280 and the substrate 10. [

The chemical supply unit 230 may be configured to spray the chemical onto at least one of the substrate 10 and the cleaning brush 280. The type and characteristics of the chemical sprayed onto the cleaning brush 280 may vary depending on the required conditions and design specifications And the like. At least one of SC1 (Standard Clean-1, APM) and HF (HF) may be used as the chemical to be sprayed onto the cleaning brush 280 so as to enhance the removal efficiency of the fine organic matter. In some cases, pure water (or another cleaning liquid) may be sprayed instead of the chemical at the contact portion between the cleaning brush 280 and the substrate, or chemical and pure water may be sprayed together.

Referring to FIG. 12, a megasonic generator 270 for supplying vibration energy to the surface of the substrate 10 may be provided in the pre-clean region P1.

The megasonic generator 270 can supply vibrational energy (e.g., high frequency vibration energy or low frequency vibration energy) to the surface of the substrate 10 in various ways depending on the required conditions and design specifications. Hereinafter, the megasonic generator 270 vibrates the surface of the substrate 10 through a cleaning liquid or a chemical sprayed onto the surface of the substrate 10 through the cleaning liquid spraying unit 230, An example in which foreign matter can be effectively separated from the substrate 10 will be described. In some cases, it is also possible that the megasonic generator is configured to supply the vibration energy directly to the substrate.

In addition, since the size of particles (foreign matter) removed according to the frequency band of the vibration may be different, the megasonic generator 270 can selectively control the frequency band depending on the size of the particles. When the bubbles are present in the trenches or the contact holes formed on the surface of the substrate 10, the frequency band changing method transmits the ultrasonic vibrations to the surface of the substrate 10 by the bubbles And to provide a cleaning liquid uniformly applied to the surface of the substrate 10 with ultrasonic vibration.

On the other hand, the substrate 10 preliminarily cleaned in the preliminary cleaning area P1 can be transferred to the cleaning part 300 described later by a normal transfer arm (not shown). The transfer arm is provided only for the purpose of transferring the preliminarily cleaned substrate 10 to the cleaning part 300 by providing the preliminary cleaning area P1 and the cleaning part (for example, a contact cleaning unit to be described later) Can be used. It should be noted that during the simultaneous cleaning of different substrates 10 in the preliminary cleaning area P1 and the cleaning part 300, the escape of the transfer arm, which is provided between the preliminary cleaning area P1 and the cleaning part 300, It is possible to temporarily wait on the area.

2, the buffer module B1, B2, B is installed in the substrate processing system 1 and between the pre-cleaning area P1 of the polishing part 100 and the circulating path of the wafer carrier 120 A first buffer module B1 is disposed.

The substrate 10 having been polished in the polishing part 100 and held by the carrier head 120 is supplied to the preliminary cleaning area P1 and preliminarily cleaned before being transferred to the cleaning part 300, A process is performed. At this time, in the polishing step performed in the polishing part 100, deviation occurs in the process time depending on the material of the polishing layer, whereby the substrate 10 finished in the polishing part is supplied to the preliminary cleaning area P1 There can be a difference in time.

Therefore, when the preliminary cleaning process of another substrate is performed in the preliminary cleaning area P1 when the polished substrate 10 in the polishing part 100 is to be transferred to the preliminary cleaning area P1, The first buffer module B1 performs the first mode in which the substrate 10 is supplied from the wafer carrier 120 and is stacked.

Referring to FIG. 20, the first buffer module B1 is provided with a plurality of cradles 901 for positioning the substrate 10, and a connecting member 905 extending radially around the rotational driving portion 903, The hinge 901 is hinged to the hinge 901 so that the hinge 901 can be rotated 903a while circulating the hinge 901 while maintaining the horizontal state of the hinge 901. [

A detection sensor 909 for detecting whether or not the substrate 10 is seated is installed in each of the cradles 901 of the first buffer module B1. When the substrate 10 is placed on the cradle 901, Pure water 910 is supplied from the sphere 908 to maintain the wetted state of the substrate 10 held by the base 901. Although the pure water supply port 908 supplies the pure water 910 from the upper side toward the substrate 10 in the figure, the pure water supply port supplies the pure water 910 from the lower side of the substrate 10 upward Or may be arranged separately or in a separate form. Accordingly, even if the polishing surface of the substrate 10 faces either the upper side or the lower side, the wet state of the polishing surface of the substrate 10 is maintained, so that the foreign substances on the polishing surface are dried and fixed to the polishing surface And at the same time, it can be prevented from being damaged if dried according to the properties of the substrate 10.

First of all, since the first buffer module B1 is configured such that the plurality of cradles 901 can rotate in the vertical direction, the cradle 901 can be positioned at the uppermost position. 21, the carrier 901 is moved along the guide rail 120R in a state where the cradle 901 to which the substrate 10 is to be mounted is rotated (903a) to the upper position The spindle 120x is positioned on the upper side of the first buffer module B1 and the substrate 10 held by the carrier head 120 is moved by moving means It is possible to directly mount the substrate 10 from the carrier head 120 to the mount table 901 even without the transfer arm or the transfer robot.

The first buffer module B1 can be installed to be reciprocated 900d along a predetermined path provided between the circulation path of the carrier head 120 and the preliminary cleaning area P1 by the driving part M . Thus, even if the carrier head 120 does not deviate from the circulation path (the arrow path in FIG. 2) for the polishing process of the substrate, if the first buffer module B1 moves to the lower side of the circulation path of the carrier head 120 The carrier head 120 may drop the substrate 10 downward from the upper side of the first buffer module B1 so that the movement of the carrier head 120 After transferring the substrate 10 to the first buffer module B1, the carrier head 120 may receive the new substrate from the loading unit 20 and immediately begin the polishing process.

Although the configuration illustrated in the figure is configured such that the first buffer module B1 is circulated in the form of rotating a plurality of cradles, the present invention is not limited thereto, and may be configured in a form similar to a car parking tower or in various other forms, The present invention can also be applied to a configuration having a plurality of cradles as the first buffer module B1.

As described above, according to the present invention, even if the supply period for supplying the substrate to the preliminary cleaning process is not coincident with the time required for the preliminary cleaning process, the carrier head 120 can continuously It is possible to obtain an effect of increasing the efficiency of the polishing process.

Particularly, as disclosed in Korean Patent Application No. 2014-173576 filed by the present applicant, in the case where various polishing processes are performed in a single polishing part, May not be constant. Nevertheless, according to the present invention, since the first buffer module (B1) is provided in the vicinity of the pre-clean area (P1), the substrate on which the polishing process has been completed at uneven intervals from the polishing part, It is possible to obtain an advantageous effect of continuing the treatment process.

Further, in the polishing part 100 shown in Fig. 2, the substrate moves along two circulating paths, and the polishing process performed in the two polishing circulating paths may be different polishing processes. In this case, when the substrate 10 is supplied to the pre-cleaning area P1 arranged up and down, the substrate 10 on which the polishing process has been completed from the upper side is transferred to the preliminary cleaning area The substrate 10 on which the polishing process has been completed from the lower side may be supplied to the preliminary cleaning region P2 on the upper side using the transfer device for substrate loading. As described above, since the polishing time required to finish the polishing in the polishing process performed in the two polishing circulation paths becomes uneven, it is not necessary to wait immediately for the time deviation, and any of the preliminary cleaning areas P2 disposed on the upper and lower sides It is possible to shorten the time required for supplying the cleaning solution to the cleaning part 300 after the preliminary cleaning step is completed and the main cleaning step is performed.

That is, even if the supply period of the substrate 10 supplied to the upper and lower preliminary cleaning regions P1 is irregular, the substrate 10 to be excessively supplied from the first buffer module B1 is accommodated, The substrate which has undergone the preliminary cleaning process in the first buffer module P1 is transferred to the cleaning part 300 for the main cleaning process so that the first buffer module B1 immediately supplies the substrate 10 to the preliminary cleaning area P1 Mode, the efficiency of the process can be maximized even when the supply period of the polished substrate is varied due to different polishing processes in the polishing part. At this time, the carrier head holding the substrate 10 after the polishing process has been completed has the first buffer module B1 in which the substrate is placed in the first buffer module B1 arranged on the upper and lower sides, 10 are supplied and stacked on one another, the advantages of continuous processing of the substrate 10 can be obtained even if different polishing processes are performed in one facility 1.

The substrate 10 may be supplied from the first buffer module B1 to the preliminary cleaning area P1 by using a facility such as a robot arm. However, the reversing unit 140 shown in FIGS. Lt; / RTI > The substrate 10 is inverted 180 degrees by the reversing unit 140 while being inverted by 180 degrees so that the polishing surface is shifted upward from the first buffer module B1 to the preliminary cleaning area P1 by the reversing unit 140, To the pre-cleaning area P1.

On the other hand, in the case where the preliminary cleaning process of another substrate is not carried out in the preliminary cleaning region P1, the substrate 10, in which the polishing process has been completed on the upper and lower sides of the polishing part 100, The second mode in which the substrate 10 held in the carrier buffer 120 is directly supplied from the carrier head 120 to the pre-cleaning area P1 without passing through the first buffer module B1 is performed.

In this case, as shown in FIGS. 22 and 23, the substrate 10 is transferred from the carrier head 120 to the inversion unit 140, and the substrate 10 is inverted 180 degrees by the inversion unit 140 The polishing surface is supplied to the pre-cleaning area P1 in a posture directed upward. That is, the grip assembly 148 of the reversal unit 140 is disposed on the upper side or the one side of the first buffer module B1, and passes through the circulation path of the carrier head 120 and the preliminary cleaning area P1, do.

Therefore, when the preliminary cleaning region P1 is empty and the preliminary cleaning of the substrate after the polishing process can be immediately carried out, the movable deflection unit 140 receives the substrate 10 from the carrier head 120, The substrate 10 is moved to the cleaning area P1. In some cases, the substrate may be pre-cleaned in the pre-cleaning area P1 in a state where the substrate is received in the inversion unit 140. [

The inversion unit 140 allows the polishing surface of the substrate 10 to be reversed in the opposite direction before the substrate 10 after the chemical mechanical polishing process is supplied to the cleaning part 300.

For reference, the polishing surface of the substrate 10 in the present invention means the surface (bottom surface or top surface) of the substrate 10 to be polished, which is in contact with the polishing pad (see 110 in FIG. 2). The polishing surface of the substrate 10 (for example, the bottom surface of the substrate) may be disposed so as to face downward during the chemical mechanical polishing process, and the polishing unit 140 may be arranged such that the polishing surface of the substrate 10 faces upward The substrate is inverted by 180 degrees so as to be inverted.

To this end, the inversion unit 140 includes a movable assembly 144 that moves from the loading area P2 to the pre-cleaning area P1, and a rotation assembly (not shown) connected rotatably to the movable assembly 144 146) and. And a grip assembly 148 coupled to the rotating assembly 146 for gripping the substrate 10. The movable assembly 144 is provided movably in the pre-cleaning area P1 where the substrate 10 is unloaded in the loading area P2 where the substrate 10 is loaded in the polishing part 10. [

The loading region P2 of the substrate 10 can be variously changed according to the required conditions and design specifications. The loading region P2 can be provided on the movement path (e.g., a circulation path) of the transfer unit (e.g., the carrier head) so as to shorten the movement path of the carrier head 120 preferably.

That is, when the pre-cleaning area of the substrate is provided outside the movement path of the carrier head, since the carrier head must move along the movement path and then move again to the pre-cleaning area of the substrate provided outside the movement path, There is a problem that the movement path of the carrier head inevitably increases. However, in the structure in which the substrate 10 is received by the reversing unit 140, since the carrier head 120 needs to move only the movement path without moving to the preliminary cleaning area P1, You do not need to add a path other than a circular path.

The movable assembly 144 can be provided in proximity to and spaced from the pre-clean area P1 in various manners depending on the required conditions and design specifications. In one example, the movable assembly 144 may be provided to be linearly movable from the loading area P2 to the pre-cleaning area P1 (or the loading area in the pre-cleaning area). In some cases, it is also possible to configure the movable assembly to rotate around a point and to move from the loading area to the pre-cleaning area.

The movable assembly 144 can be configured to move from the loading area to the pre-cleaning area P1 by the driving force by the driving assembly 142. [ In one example, the movable assembly 144 can be linearly moved from the loading area P2 to the pre-cleaning area P1 by the driving force of the driving assembly 142. [

As the driving assembly 142, a conventional driving means capable of providing a driving force may be used, and the present invention is not limited or limited by the type and characteristics of the driving assembly 142. For example, as the drive assembly 142, a conventional linear motor can be used. In some cases, it is possible to construct the drive assembly with a combination of a conventional motor and a power transmitting member (for example, a gear or a combination of belts), or to construct a drive assembly using a screw member.

The grip assembly 148 is configured to be connected to the movable assembly 144 to grip the substrate 10 and the grip assembly 148 is selectively movable by the movable assembly 144 to the circulation path of the carrier head and the pre- As shown in Fig. Preferably, the grip assembly 148 may be escaped into the pre-clean area P1 off the path of travel of the carrier head 120 during the chemical mechanical polishing process (or during loading of the substrate) of the substrate 10, And only approaches the circulating path of the carrier head 120 when receiving the polished substrate 10. Although not shown in the drawings, the grip assembly 148 may be provided with a support for supporting the bottom edge of the substrate in the grip portion to receive the substrate 10 directly from the carrier head 120. A suction hole for applying a suction pressure to the edge surface of the substrate 10 may be formed to maintain the substrate 10 stably gripped while the grip assembly 148 is rotated 180 degrees.

The rotary assembly 148 is rotatably connected to the movable assembly 144 and the grip assembly 148 is connected to the rotary assembly 148 to selectively rotate the rotary assembly 148 by the rotary assembly 148, Can rotate in a reverse direction with respect to the rotating shaft (144).

The rotating assembly 148 may be constructed using conventional rotating shafts and driving means, and the structure and characteristics of the rotating assembly 148 may be variously changed according to required conditions and design specifications. In some cases, the grip assembly is fixed on the movable assembly, and the movable assembly can be configured to be reversely rotatable with respect to the drive assembly.

The grip assembly 148 may be provided in a variety of configurations to selectively grip the substrate 10, and the present invention is not limited or limited by the structure and characteristics of the grip assembly 148.

On the other hand, preliminary cleaning in the preliminary cleaning region P1 can be performed with the substrate 10 supported by the inversion unit 140. [ In other words, the reversing unit 140 serves not only to rotate the substrate 10 in the reverse direction, but also to serve as a mounting part for mounting the substrate.

As described above, the preliminary cleaning in the preliminary cleaning area P1 is performed while the substrate 10 is supported by the inversion unit 140, so that during the preliminary cleaning in the preliminary cleaning area P1, It is possible to obtain an advantageous effect of simplifying the supporting process of the substrate to be performed so as not to move.

Of course, it is also possible to carry out the preliminary cleaning by supporting the substrate 10 by means of a separate support means (mounting means) in the preliminary cleaning region, but it is also possible to carry out the preliminary cleaning in such a manner that the substrate is supported during the inversion process of the substrate, The process of supporting the substrate is simplified, and an advantageous effect of reducing the overall process can be obtained.

As an example, the preliminary cleaning in the preliminary cleaning area P1 may proceed in a state in which the substrate 10 is reversely rotated by the reversing unit 140 (a state in which the polishing surface is inverted so as to face upward).

As another example, preliminary cleaning in the preliminary cleaning area P1 can be performed with the substrate 10 placed vertically by the reversal unit 140. [ By performing the preliminary cleaning in a state where the substrates are vertically arranged as described above, it is possible to obtain an advantageous effect that the cleaning fluid such as the cleaning liquid or the chemical used in the preliminary cleaning can be discharged quickly and easily without remaining on the surface of the substrate 10 Can be obtained.

In some cases, the substrate may be preliminarily cleaned in a state in which the substrate is supported by the inversion unit 140 before the substrate is inverted by the inversion unit 140 (i.e., the substrate is polished so as to face downward) It is possible.

The preliminary cleaning in a state in which the substrate 10 is supported by the reversing unit 140 includes a method of spraying a cleaning fluid such as chemical, DIW, steam, dissimilar fluid, etc. on the surface of the substrate, Is defined as a concept including both a method of rotating the cleaning brush against the surface of the substrate and a method of supplying vibration energy to the surface of the substrate.

Referring again to Figure 2, the cleaning part 300 is provided on the adjacent side of the polishing part 100 and is used to clean foreign materials remaining on the surface of the pre-cleaned substrate 10 in the pre-cleaned area P1 / RTI >

As shown in FIG. 24, the cleaning part 300 may include a plurality of cleaning units 402, 404, 502, and 504 provided in a laminated structure, and may be provided in various structures according to required conditions. The plurality of cleaning units 402, 404, 502, and 504 are stacked along the vertical direction. The plurality of cleaning units 402, 404, 502, and 504 are stacked in a two-layer structure or a three- Is defined as being placed.

For example, the cleaning units 402, 404, 502, and 504 may include a plurality of contact cleaning processes (not shown) that are stacked along the vertical direction and physically contact the surface of the substrate, And a plurality of noncontact cleaning units 502 and 504 which are stacked along the vertical direction and physically contacted to the surface of the substrate 10 and perform cleaning on the substrate 10 individually . Hereinafter, an example in which two contact type cleaning units 402 and 404 and two non-contact type cleaning units 502 and 504 are arranged in a two-layer structure will be described. In some cases, it is also possible to provide only one of the contact type cleaning unit and the non-contact type cleaning unit in a laminated structure.

The cleaning part 300 is provided with a transfer unit 300 for transferring the substrate 100 from one of the plurality of cleaning units 402, 404, 502, and 504 to the other of the plurality of cleaning units 402, 404, And the substrate 10 can be transferred in the cleaning part 300 by the transfer unit 310. [

The transfer unit 310 may be a conventional robot arm movable along the vertical direction, and the present invention is not limited or limited by the type and structure of the transfer unit 310.

For reference, the cleaning of the substrate 10 in the cleaning part 300 in the present invention refers to the cleaning of the surface of the substrate 10 (particularly, the polishing surface of the substrate and the non-polished surface of the substrate) As a main cleaning process for as much as possible to clean the foreign substances remaining in the cleaning liquid. Particularly, in the cleaning of the substrate 10, foreign substances (for example, foreign substances having a size of 40 to 100 nm) relatively small in size and foreign substances adhering with relatively strong adhesion force are removed from the foreign substances existing on the surface of the substrate 10 .

In addition, the substrate 10 cleaned in the cleaning part 300 is configured to perform the next predetermined process without cleaning. Here, performing the next process without the substrate 10 in the cleaned state means that the cleaning process in the cleaning part 300 is finally completed, and that all the cleaning process with respect to the substrate 10 is completed, For the substrate 10 on which the process has been completed, a subsequent process (e.g., a deposition process) may proceed without an additional cleaning process.

The cleaning part 300 may be provided with a structure capable of performing various stages of cleaning and drying processes and the present invention is not limited or limited by the structure and layout of the cleaning station constituting the cleaning part 300.

Preferably, the cleaning part 300 physically contacts the surface of the substrate 10 and performs cleaning to effectively perform cleaning to remove organic matter and other foreign matter remaining on the surface of the substrate 10 Contact type cleaning unit 400 and a non-contact type cleaning unit 500 that is physically in contact with the surface of the substrate 10 and performs cleaning. In some cases, the cleaning part may include only one of the contact type cleaning unit and the non-contact type cleaning unit.

The contact type cleaning unit 400 may be provided in various structures physically contacting the surface of the substrate 10 and capable of performing cleaning. Hereinafter, an example in which the contact type cleaning unit 400 includes the first contact type cleaning unit 402 and the second contact type cleaning unit 404 will be described.

Referring to FIG. 13, in one example, the first contact type cleaning unit 402 may include a first cleaning brush 410 that rotates and contacts the surface of the substrate 10.

In one example, the pre-cleaned substrate 10 can be cleaned by a pair of first cleaning brushes 410 that rotate in a rotating state by a normal spindle (not shown). In some cases, the substrate may be cleaned by the first cleaning brush in a fixed state without rotating. Alternatively, it is possible for only one first cleaning brush to perform cleaning for only one plate surface (e.g., polishing surface) of the substrate.

The first cleaning brush 410 may be used as a brush made of a conventional material (for example, polyvinyl alcohol of a porous material) capable of being brought into frictional contact with the surface of the substrate 10. In addition, a plurality of cleaning protrusions may be formed on the surface of the first cleaning brush 410 to improve the contact property of the brush. Of course, it is also possible to use a brush having no cleaning protrusion in some cases.

The first cleaning brush 410 may be mounted on the substrate 10 so as to enhance the cleaning effect of the first cleaning brush 410 and the substrate 10 due to frictional contact while the first cleaning brush 410 is being cleaned. And a chemical supply unit 420 for supplying a chemical to a contact portion between the first cleaning brush 410 and the substrate 10 while the first cleaning brush 410 is in contact with the cleaning brush 410.

The chemical supply unit 420 may be configured to spray the chemical onto at least one of the substrate 10 and the first cleaning brush 410. The type and the nature of the chemical sprayed to the first cleaning brush 410 And can be variously changed depending on conditions and design specifications. At least one of SC1 (Standard Clean-1, APM), sulfuric acid, and hydrofluoric acid (HF) may be used as the chemical to be sprayed onto the first cleaning brush 410 so as to enhance removal efficiency of fine organic matter. In some cases, pure water may be sprayed instead of the chemical at the contact portion between the first cleaning brush and the substrate, or both the chemical and pure water may be sprayed together.

On the other hand, if the foreign substance separated from the substrate 10 by the rubbing contact cleaning of the first cleaning brush 410 is attached to the first cleaning brush 410, the substrate 10 may be contaminated again or the cleaning efficiency may be lowered , There is a possibility that the substrate 10 may be damaged by the foreign substance attached to the first cleaning brush 410.

In order to solve this problem, a foreign matter removing unit 430 may be provided for removing foreign matter adhering to the surface of the first cleaning brush 410.

The foreign matter removing unit 430 may be provided in various structures capable of removing foreign matter attached to the surface of the first cleaning brush 410. The present invention is limited or limited by the structure and the method of the foreign matter removing unit 430 It is not.

14, the foreign substance removing unit 430 includes a contact member 432 provided so as to be able to contact the outer surface of the first cleaning brush 410, an ultrasonic wave And a generating unit 434.

The contact member 432 may be provided in various structures and shapes that can contact the outer surface of the first cleaning brush 410. Here, the contact member 432 may be formed as a bar or a rod having a length corresponding to the length of the first cleaning brush 410. In some cases, it is possible that the contact member is formed in a structure having an arcuate cross section, or that the contact member is provided in a structure having contact protrusions on the surface.

The ultrasonic wave generator 434 applies ultrasonic waves to the contact member 432 so that vibration energy can be supplied to the surface of the contact member 432. As the ultrasonic wave generator 434, a conventional ultrasonic wave generator capable of generating ultrasonic waves can be used.

The surface of the contact member 432 can be vibrated by the ultrasonic wave generator 434 so that the foreign matter separated from the substrate 10 by the first cleaning brush 410 is separated from the surface of the first cleaning brush 410 The vibrating contact member 432 can be detached from the surface of the first cleaning brush 410 as it is contacted. In some cases, the foreign matter separated from the first cleaning brush by the contact member may be collected by a separate receptacle or suction means.

15, the foreign matter removing unit 430 includes a fluid spraying unit 432 'for spraying a liquid-phase fluid toward the outside in the first cleaning brush 410, And an ultrasonic wave generator 434 'for applying ultrasonic waves to the liquid fluid injected from the ultrasonic wave generator 432'.

The fluid spraying part 432 'may be provided in various structures capable of spraying the liquid-phase fluid toward the outside in the first cleaning brush 410. For example, the fluid spraying part 432 'includes a fluid supply path 432a' for supplying a liquid fluid, a fluid supply path 432b 'connected to the fluid supply path 432a' And a fluid injection pipe 432b 'disposed inside the brush 410. A plurality of injection holes 432c' are formed radially on the surface of the fluid injection pipe 432b '. The liquid fluid supplied from the fluid supply passage 432a 'may be axially transferred to the inside of the first cleaning brush 410 along the fluid injection tube 432b', and the liquid fluid supplied from the fluid supply tube 432b ' The liquid fluid can be injected through the injection hole 432c 'by the supply pressure of the fluid supply passage 432a' and the rotational force of the first cleaning brush 410. [ The ultrasonic wave generator 434 'is provided to apply ultrasonic waves to the liquid fluid ejected from the fluid ejector 432', and the ultrasonic wave generator 434 'may be a conventional ultrasonic wave generator capable of generating ultrasonic waves .

As the liquid fluid that can be ejected from the fluid ejecting portion 432 'of the foreign substance removing unit 430, a normal fluid having a liquid state can be used. The type and characteristics of the liquid fluid can be variously changed according to the required conditions and design specifications . For example, the fluid injecting unit 432 'of the foreign matter removing unit 430 may inject pure water DIW.

The liquid jetting section 432 'and the ultrasonic wave generating section 434' generate a liquid fluid having vibration energy toward the outside (for example, in the radial direction of the first cleaning brush) inside the first cleaning brush 410 So that the foreign matter separated from the substrate 10 by the first cleaning brush 410 is not adhered to the surface of the first cleaning brush 410 but is separated from the surface of the first cleaning brush 410 by the first cleaning Can be separated from the surface of the brush 410.

16, a pressing member 440 for pressing the surface of the first cleaning brush 410 in the non-contact state of the first cleaning brush 410 with respect to the substrate 10 may be provided.

Here, the non-contact state of the first cleaning brush 410 with respect to the substrate 10 can be understood as a state in which the first cleaning brush 410 is spaced apart from the substrate 10 so as not to be in contact with the substrate 10. For example, the substrate 10 cleaned in the first cleaning brush 410 may be transferred to the next process, and another substrate 10 to be cleaned may be transferred to the cleaning area of the first cleaning brush 410 The first cleaning brush 410 is disposed in a noncontact state with respect to the substrate 10 while the substrate 10 is being conveyed.

During the cleaning process by the first cleaning brush 410, the first cleaning brush 410 is brought into contact with the surface of the substrate 10 and the surface of the first cleaning brush 410 is pressed (or compressed) And the brush cleaning conditions such as the rotational speed and the frictional force of the first cleaning brush 410 can be set on the basis of the state in which the first cleaning brush 410 is in contact with the substrate 10 (pressed state).

However, while the first cleaning brush 410 is disposed in a noncontact state with respect to the substrate 10, the surface of the first cleaning brush 410, which has been compressed as the chemical and cleaning liquid is dewatered from the first cleaning brush 410, (Or inflated close to the original state). If another substrate 10 is cleaned while the surface of the first cleaning brush 410 is restored, the frictional force and the pressing force of the first cleaning brush 410 are changed. Therefore, the first cleaning brush 410 ) Is not uniformly maintained with respect to each substrate 10.

The pressing member 440 presses the surface of the first cleaning brush 410 in the noncontact state of the first cleaning brush 410 with respect to the substrate 10 so that the cleaning effect by the first cleaning brush 410 To be maintained uniformly. The pressing member 440 may be configured to pressurize the surface of the first cleaning brush 410 corresponding to the section in which the surface of the first cleaning brush 410 is pressed in contact with the surface of the substrate 10 have. Since the first cleaning brush 410 can be pressed against the substrate 10 under the same conditions in both contact and noncontact states, the cleaning effect of each substrate 10 by the first cleaning brush 410 Can be uniformly maintained.

The pressing member 440 can be provided in various structures that can press the surface of the first cleaning brush 410. For example, the pressing member 440 may be formed in the shape of a bar or a rod having a length corresponding to the length of the first cleaning brush 410. In some cases, the pressing member may be formed in a structure having an arc-shaped cross section, or may be formed in a structure covering the entire surface of the first cleaning brush.

Meanwhile, since the friction force of the first cleaning brush 410 with respect to the substrate 10 greatly influences the cleaning effect of the substrate 10 while the substrate 10 is cleaned by the first cleaning brush 410, The frictional force of the first cleaning brush 410 with respect to the substrate 10 must be uniformly maintained in order to maintain the cleaning effect of the cleaning brush 10 uniformly. To this end, a frictional force adjusting unit 450 may be provided to adjust the frictional force of the first cleaning brush 410 with respect to the substrate 10.

The frictional force adjusting unit 450 may be provided in various structures capable of adjusting the frictional force of the first cleaning brush 410 with respect to the substrate 10. The frictional force adjusting unit 450 may be configured to adjust the frictional force of the first cleaning brush 410 with respect to the substrate 10 in real time while the cleaning process with the first cleaning brush 410 is performed.

17, the frictional force adjusting unit 450 includes a connecting member 452 connected to the rotating shaft of the first cleaning brush 410, a frictional force of the first cleaning brush 410 with respect to the substrate 10, A sensing unit 454 that senses a displacement of the connection member 452 along the sensing unit 454 and a brush moving unit 452 that moves the first cleaning brush 410 relative to the substrate 10 according to a result sensed by the sensing unit 454, 456 < / RTI >

The connection member 452 is integrally connected to the rotation shaft of the first cleaning brush 410 and is connected to the first cleaning brush 410 according to the change of the frictional force F _f of the first cleaning brush 410 with respect to the substrate 10. [ The same displacement may be generated in the connecting member 452 as well.

The sensing unit 454 can be used with various means capable of sensing the displacement of the connecting member 452. For example, a typical load cell may be used as the sensing unit 454. In some cases, it is possible to detect the displacement of the connecting member by using other conventional sensing means.

The brush moving unit 456 can adjust the friction force by moving the first cleaning brush 410 with respect to the substrate 10 according to the result detected by the sensing unit 454. For example, if the frictional force F _{f of} the first cleaning brush 410 with respect to the substrate 10 is greater than a predetermined condition, the brush moving unit 456 moves the first cleaning brush 410 away from the substrate 10 If the frictional force F _f of the first cleaning brush 410 with respect to the substrate 10 is smaller than the predetermined condition, the brush moving unit 456 can move the first cleaning brush 410 in the direction The first cleaning brush 410 can be moved in the direction in which the first cleaning brush 410 approaches the substrate 10.

The brush moving unit 456 may be provided in various structures capable of moving the first cleaning brush 410 in a direction in which the first cleaning brush 410 is moved toward and away from the substrate 10. The structure of the brush moving unit 456, The present invention is not limited thereto. For example, the brush moving unit 456 may include a lead screw rotating on the driving force of the driving motor and a guide member moving along the lead screw.

The vertical load acting on the substrate 10 by the first cleaning brush 410 greatly influences the cleaning effect of the substrate 10 while the substrate 10 is being cleaned by the first cleaning brush 410 In order to maintain the cleaning effect of the substrate 10 uniformly, the first cleaning brush 410 uniformly applies a vertical load acting on the substrate 10 because the frictional force becomes large when the vertical load is increased, for example. Be maintained. To this end, a vertical load adjusting unit 460 for adjusting a vertical load acting on the substrate 10 by the first cleaning brush 410 may be provided.

The vertical load adjuster 460 may be provided with various structures capable of adjusting a vertical load applied to the substrate 10 by the first cleaning brush 410. The vertical load adjusting unit 460 may be configured to adjust the vertical load applied to the substrate 10 by the first cleaning brush 410 in real time.

18, the vertical load adjusting unit 460 includes a vertical connecting member 462 vertically connected to the rotating shaft of the first cleaning brush 410, and a vertical connection member 462 vertically connecting the cleaning brush and the substrate 10 A sensing unit 464 for sensing the displacement of the vertical connecting member 462 in response to a vertical load acting on the vertical connecting member 462 by the sensing unit 464, And a brush moving unit 466 for moving the first cleaning brush 410.

The vertical connection member 462 is integrally connected to the rotation shaft of the first cleaning brush 410 so as to be vertically disposed along the gravity direction and when the first cleaning brush 410 contacts the substrate 10, If vertical displacement is generated in the first cleaning brush 410 according to the change of the vertical load F _n acting on the substrate 10 by the first cleaning brush 410, the same displacement may occur in the vertical connection member 462 as well.

The sensing portion 464 is disposed on the same vertical line as the vertical connecting member 462 and the vertical displacement occurring in the vertical connecting member 462 in the contact and noncontact states of the first cleaning brush 410 with respect to the substrate 10 .

As the sensing unit 464, various means capable of sensing the vertical displacement of the vertical connecting member 462 can be used. For example, a typical load cell may be used as the sensing unit 464. In some cases, it is possible to detect the displacement of the vertical connecting member by using other conventional sensing means.

For example, when the first cleaning brush 410 does not contact the substrate 10, the result detected by the sensing unit 464 through the vertical connecting member 462 is 'A', and the first cleaning brush 410 When the detection result of the sensing unit 464 is detected as 'B' which is smaller than 'A' when the substrate 10 is contacted to the substrate 10, the vertical load acting on the substrate 10 through the difference between 'A' and 'B' (F _n ) can be calculated. When the first cleaning brush 410 is not in contact with the substrate 10, the sensing unit can sense the load 'A' of the first cleaning brush 410 in a pure manner. In contrast, when the first cleaning brush 410 contacts the substrate 10, the load of the first cleaning brush 410 may be partially dispersed in the substrate 10, so that the 'B' value sensed by the sensing unit is' A '. Therefore, the vertical load F _n acting on the substrate 10 can be calculated through the difference between 'A' and 'B'.

The brush moving unit 466 moves the first cleaning brush 410 relative to the substrate 10 according to the result detected by the sensing unit 464 to adjust the vertical load F _n acting on the substrate 10 have. For example, if the vertical load F _n acting on the substrate 10 is greater than a predetermined condition, the brush moving unit 466 moves the first cleaning brush 410 in the direction in which the first cleaning brush 410 is separated from the substrate 10, When the vertical load F _n acting on the substrate 10 is smaller than a predetermined condition, the brush moving part 466 moves the first cleaning brush 410 against the substrate 10 The first cleaning brush 410 can be moved in a direction in which the first cleaning brush 410 approaches.

The brush moving part 466 may be provided in various structures capable of moving the first cleaning brush 410 in a direction in which the first cleaning brush 410 is moved toward and away from the substrate 10. The structure of the brush moving part 466, The present invention is not limited thereto. For example, the brush moving unit 466 may include a lead screw rotating with a driving force of the driving motor, and a guide member moving along the lead screw.

19, the second contact type cleaning unit 405 may include a second cleaning brush 412 rotating and contacting the surface of the substrate 10. [

The second cleaning brush 412 may perform cleaning on the substrate 10 in the same or similar structure and manner as the first cleaning brush 410. In some cases, the contact type cleaning unit can be constituted of only the first cleaning brush, excluding the second cleaning brush 412. [

The chemical supply portion 420, the pressing member 440, the frictional force adjusting portion 450, the vertical (vertical) surface of the substrate 10 during the cleaning of the substrate 10 by the second cleaning brush 412, And the load adjusting unit 460. The cleaning process by the second cleaning brush 412 can be variously changed according to required conditions and design specifications.

In addition, the first cleaning brush 410 and the second cleaning brush 412 can respectively perform cleaning processes in independent cleaning processing spaces provided by separate blocking units (see 402 and 404 in FIG. 24) .

On the other hand, the substrate 10 which has been cleaned in the first contact type cleaning unit (for example, the first cleaning brush) is transferred to the second contact type cleaning unit (for example, the second cleaning brush) Lt; / RTI > The transfer arm is provided so that the first contact type cleaning unit and the second contact type cleaning unit can be reciprocated to transfer the cleaned substrate 10 from the first contact type cleaning unit to the second contact type cleaning unit . For reference, while the different substrates 10 are simultaneously cleaned in the first contact type cleaning unit and the second contact type cleaning unit, the transfer arm is provided between the first contact type cleaning unit and the second contact type cleaning unit It is possible to temporarily stand by on the escape region.

Further, the substrate 10 which has been cleaned in the second contact type cleaning unit (for example, the second cleaning brush) can be transferred to the non-contact type cleaning unit 500 to be described later by a normal transfer arm. The transfer arm is provided to be capable of reciprocating the second contact type cleaning unit and the non-contact type cleaning unit 500 to transfer the cleaned substrate 10 from the second contact type cleaning unit to the non-contact cleaning unit 500 . For reference, while the different substrates 10 are simultaneously cleaned in the second contact type cleaning unit and the non-contact type cleaning unit, the transfer arm is temporarily placed on the escape area provided between the second contact type cleaning unit and the non- .

The non-contact type cleaning unit 500 may be provided in various structures that are physically non-contact with the surface of the substrate 10 and can perform cleaning. Hereinafter, an example in which the non-contact type cleaning unit 500 includes the first non-contact type cleaning unit 502 and the second non-contact type cleaning unit 504 will be described. In some cases, it is also possible that the non-contact type cleaning unit is composed of only one cleaning unit.

Preferably, a blocking unit 502, 504 for blocking the cleaning processing space of the non-contact type cleaning unit 500 from the other space while the cleaning is performed in the non-contact type cleaning unit 500 may be provided. Here, the cleaning processing space of the non-contact type cleaning unit 500 can be understood as a space where cleaning is performed by the non-contact type cleaning unit 500, and the cleaning processing space of the non-contact type cleaning unit 500 can be independently As shown in FIG.

The blocking units 502 and 504 can be provided in various structures capable of providing an independent closed space that is shielded from the outside. The blocking units 502 and 504 are provided so as to surround the periphery of the substrate 10 and include a casing 502b for providing independent cleaning processing space and an opening and closing member for opening and closing the entrance of the casing 502b 502a, ...) will be described as an example.

The openings and closing members 502a, ... may be provided in the form of a general drive unit (a combination of a motor and a power transmitting member) And can open and close the entrance of the casings 502b, ..., and so on.

30, the non-contact type cleaning unit 500 includes a holder 520 on which a substrate 10 is mounted on a unit basis and which is rotatably provided on a rotating shaft 521 in a casing 502b, And a collection container 530 provided to surround the periphery of the holder 520 and recovering the processing fluid scattered from the surface of the substrate 10.

Preferably, the holder 520 is provided movably along the vertical direction, and the inner wall of the recovery container 530 is provided with a plurality of recovery ducts The number of recovery cups 532 to 538 can be formed. Hereinafter, an example in which the recovery container 530 includes four recovery cups 532 to 538 that independently form the four recovery ducts will be described. In some cases, it is possible that the recovery container includes three or less or five or more recovery cups.

Such a structure allows the substrate 10 to be cleaned in various ways using various types of chemicals and / or fluids by varying the height of the holder 520 in a single processing space, Thereby enhancing the removal efficiency of the foreign matter.

A jetting portion for jetting a chemical, a fluid, a heterogeneous fluid, steam, or the like may be disposed on the upper surface of the substrate 10 mounted on the mounting table 520 at an upper portion of the mounting table 520, The fluid to be scattered (the fluid used in the cleaning process of the substrate surface) can be recovered to the different recovery cups 532 to 538 depending on the height of the platform 520. In addition, drain pipes for discharging the recovered processing fluids are individually connected to the recovery cups 532 to 538, respectively.

The non-contact cleaning unit 500 can be configured to perform cleaning in various ways depending on the required conditions and design specifications.

Referring to FIG. 30, the non-contact type cleaning unit 500 may include a chemical spray portion 540 for spraying at least one kind of chemical onto the surface of the substrate 10.

In the present invention, it is possible to use chemical as a cleaning liquid because the cleaning processing space of the non-contact type cleaning unit 500 is provided in an independently closed chamber structure.

As the chemical spray portion 540, a conventional nozzle capable of spraying a chemical can be used, and the present invention is not limited or limited by the kind and characteristics of the nozzle. Preferably, a nozzle capable of uniformly jetting the chemical to the surface of the substrate 10 at a high pressure can be used.

The chemical sprayer 540 may be configured to spray various chemicals onto the surface of the substrate 10 according to the required conditions and design specifications. Preferably, the chemical injection unit of the non-contact type cleaning unit 500 is capable of spraying at least one of ozone hydrofluoric acid (O ₃ HF) and hydrofluoric acid (HF), which is effective for removing organic matter. In some cases, it is also possible to spray other chemical such as SC1 (Standard Clean-1, APM), ammonia, sulfuric acid, hydrogen peroxide, etc., of the non-contact type cleaning unit.

The chemical spray unit 540 of the noncontact type cleaning unit 500 also oscillates to the surface of the substrate 10 in the same or similar manner as the chemical spray unit provided in the preliminary cleaning area P1 , And can be configured to oscillate spray the chemical onto the surface of the substrate 10 (see Figure 7).

For reference, the mounting condition (height) of the mount 520 can be variously changed according to required conditions and design specifications. For example, when the chemical is injected from the chemical spraying unit 540 of the non-contact cleaning unit 500, the holder 520 may be disposed at the uppermost position, and the processing fluid (chemical) And can be recovered through the recovery cup 532.

Referring to FIG. 31, the non-contact type cleaning unit 500 may include a steam spraying unit 550 for spraying steam on the surface of the substrate 10.

Particularly, the steam sprayed from the steam spraying unit 550 is effective for removing organic substances existing on the surface of the substrate 10. [ For reference, the steam spraying unit 550 may be configured to spray steam at a temperature that can prevent damage to the substrate 10 while ensuring efficiency of removing organic substances by steam. Preferably, the steam injector 550 can inject steam at a temperature of 60 ° C to 120 ° C.

For example, when the steam is sprayed from the steam injection unit 550 of the non-contact type cleaning unit 500, the holder 520 may be disposed at the first lower right end of the uppermost stage, And can be recovered through the recovery cup 534.

Further, the non-contact type cleaning unit 500 may include a cleaning liquid spraying unit (not shown) for spraying a cleaning liquid onto the surface of the substrate 10.

The cleaning liquid jetting portion may be configured to jet various cleaning liquids onto the surface of the substrate 10 according to the required conditions. In one example, the cleaning liquid jetting portion may be configured to jet a cleaning liquid such as DIW. In some cases, it is also possible to repeatedly perform the process of spraying the pure water after the chemical is sprayed.

In addition, the non-contact type cleaning unit 500 may include a heterogeneous fluid ejection unit (not shown) for ejecting heterogeneous fluids on the surface of the substrate 10.

The heterogeneous fluid ejection portion may be provided in various structures capable of ejecting the heterogeneous fluid. For example, the disparate fluid ejection portion may include a first fluid supply portion for supplying a first fluid and a second fluid supply portion for supplying a second fluid different from the first fluid, and the first fluid and the second fluid may be mixed or And can be sprayed onto the surface of the substrate by a jetting means such as a normal nozzle in a separated state.

Similar to the preliminary cleaning process described above, the disparate fluid ejection portion may include a first fluid injection nozzle and a second fluid injection nozzle which are provided independently, and in the first fluid injection nozzle and the second fluid injection nozzle, The second fluid may be sprayed onto the surface of the substrate 10 in a state where they are separated from each other (see Fig. 5)

As another embodiment of the disparate fluid ejection portion, the disparate fluid ejection portion may include a first fluid passage through which the first fluid is supplied, a second fluid passage through which the second fluid is supplied, and a second fluid passage through which the first fluid and the second fluid are mixed And the mixed fluid can be injected at a high speed onto the surface of the substrate 10 in a state where the first fluid and the second fluid are mixed with each other in the mixed injection path (see FIG. 6).

The kind and characteristics of the heterogeneous fluid that can be injected from the heterogeneous fluid ejection section can be variously changed according to the required conditions and design specifications. In one example, the first fluid may be either a gaseous fluid or a liquid-phase fluid, and the second fluid may be either a gaseous fluid or a liquid-phase fluid. For example, the heterogeneous fluid injection portion may be configured to inject pure water (DIW), which is a liquid phase fluid, and nitrogen (N ₂ ), which is a vapor phase fluid, together so as to increase the efficiency of removing foreign substances. In some cases, it is possible to use two different kinds of liquid fluids or two different kinds of vapor fluids as long as the efficiency of removing foreign matter and foreign matter by the different fluids can be ensured.

At least one of the cleaning liquid spraying portion, the steam spraying portion and the heterogeneous fluid spraying portion is provided so as to be oscillatable with respect to the surface of the substrate 10 like the chemical spraying portion 540 so that the cleaning liquid, (Refer to FIG. 7).

30, the noncontact type cleaning unit 500 includes a heterogeneous fluid ejection unit 560 that ejects different kinds of fluids onto the surface of the substrate 10, and the heterogeneous fluid ejection unit 560 includes a non- A dry ice supplying part for supplying the particles, and a fluid spraying part for spraying the fluid onto the surface of the substrate 10).

The fluid ejection portion may be configured to eject various fluids according to the required conditions and design specifications. In one example, the fluid ejection portion may be configured to eject at least one of a gaseous fluid and a liquid fluid. Hereinafter, an example in which the heterogeneous fluid injecting section 560 is configured to inject a vapor phase fluid together with the dry ice particles will be described. In some cases, the heterogeneous fluid jetting section may be configured to inject a liquid fluid (for example, DIW) together with the dry ice particles.

33, the non-contact type cleaning unit 500 may include an isopropyl alcohol spraying unit 570 for spraying isopropyl alcohol (IPA) on the surface of the substrate 10. [

The isopropyl alcohol spraying section 570 can dry the surface of the substrate 10 as the isopropyl alcohol is sprayed on the surface of the substrate 10 and the cleaning process of the substrate 10 can be completed.

In addition, the substrate 10 which has been cleaned in the first non-contact type cleaning unit 502 can be transferred to the second non-contact type cleaning unit 504 by a normal transfer arm. The transfer arm is provided to be capable of reciprocating the first non-contact type cleaning unit 502 and the second non-contact type cleaning unit 504 so that the substrate 10, which has been cleaned in the first non-contact type cleaning unit 502, (504). For reference, while the different substrates 10 are simultaneously cleaned in the first non-contact type cleaning unit 502 and the second non-contact type cleaning unit 504, the transfer arm is moved between the first non-contact type cleaning unit 502 and the second non- Unit 504 on the basis of the result of the determination.

On the other hand, in the embodiment of the present invention, although the non-contact type cleaning unit (or the contact type cleaning unit) is described as being arranged on a single layer, in some cases, it is possible that the non-contact type cleaning unit is provided in a multi-layer structure.

24, the non-contact type cleaning unit 500 may include a plurality of blocking units 502 and 504 provided in a two-layer structure and independently providing a closed processing space, And may be cleaned by moving a plurality of blocking units 502, 504 along a predetermined path. In some cases, the non-contact type cleaning unit can be provided in a structure having three or more layers, and the present invention is not limited or limited by the arrangement and arrangement of the blocking units.

On the other hand, in the embodiment of the present invention, while the preliminary cleaning region is simply provided as an independent closed chamber structure, in some cases, a blocking unit for selectively blocking the polishing part area and the cleaning part area may be provided have.

The blocking unit may be provided in various structures capable of selectively blocking the polishing part area and the cleaning part area, and the present invention is not limited or limited by the type and structure of the blocking unit. For example, the blocking unit can be realized by a normal left-right sliding opening / closing method or a vertical shuttering method.

Such a structure originally blocks the introduction of the abrasive material and foreign matter generated in the polishing part area into the cleaning part area and at the same time blocks the chemicals and the like used in the non-contact type cleaning unit 500 from flowing out to the periphery. By doing so, the cleaning part area maintains a cleaner processing environment, and the polishing process is prevented from being unevenly performed by chemicals or the like even in the polishing part.

On the other hand, the substrate 10 can be cleaned along various cleaning paths defined in the cleaning part 300. Here, the cleaning path of the substrate 10 is understood as a sequence in which the substrate 10 is cleaned in the cleaning part 300, or a path in which the substrate is transferred and cleaned.

More specifically, the substrate 10 is configured to be cleaned along the cleaning path through at least one of the plurality of cleaning units 402, 404, 502, 504 in the cleaning part 300. Preferably, the cleaning path of the substrate 10 is configured to pass through at least any one of the plurality of contact type cleaning units 402, 404 and at least one of the plurality of non-contact type cleaning units 502, 504, The cleaning efficiency of the cleaning blade 10 can be increased.

In one example, the substrate 10 pre-cleaned in the pre-clean area P1 and then entered the cleaning part 300 may include a first contact-type cleaning unit 402, a first contact-type cleaning unit 404, The non-contact type cleaning unit 502 may be cleaned along the cleaning path sequentially, and then may be transferred to and discharged from the transfer part. At this time, the substrate 10 cleaned in the first contact type cleaning unit 402 can be transferred to the second contact type cleaning unit 404 by the transfer unit 310, and the second contact type cleaning unit 404, The substrate 10 cleaned in the first non-contact cleaning unit 502 can be transferred to the first non-contact cleaning unit 502 by the transfer unit 310.

In another example, at least one of the plurality of cleaning units 402, 404, 502, 504 may be skipped in the cleaning path of the substrate 10. Here, at least one of the plurality of cleaning units 402, 404, 502, and 504 is excluded from the cleaning path of the substrate 10 because cleaning is performed without going through a specific cleaning unit from which the substrate is removed from the cleaning part .

26, the substrate 10 which has been pre-cleaned in the pre-clean area P1 and then enters the cleaning part 300 is transferred to the first contact type cleaning unit 402 and the second contact type cleaning unit 40, it can be cleaned and discharged along the cleaning path C1, C2 through only one of the first non-contact type cleaning unit 502 and the second non-contact type cleaning unit 504. At this time, the substrate 10 cleaned in the first contact type cleaning unit 402 can be transferred to the second contact type cleaning unit 404 by the transfer unit 310, and the second contact type cleaning unit 404, The substrate 10 cleaned in the first non-contact cleaning unit 504 can be transferred to the second non-contact cleaning unit 504 by the transfer unit 310.

Similarly, as shown in Figs. 27 and 28, the substrate 10 pre-washed in the pre-cleaning area P1 and then entering the cleaning part 300 is transferred to the first contact- After passing through any one of the first contact type cleaning unit 402 and the second contact type cleaning unit 404 without going through any one of the contact type cleaning units 404, C4, C5, C6) sequentially passing through the two non-contact type cleaning units 504, and then transported to and discharged from the transporting part.

As described above, the cleaning path of the substrate can be formed in various forms. Although the figure shows an example in which the cleaning path of the substrate 10 is configured in the forward direction (contact cleaning unit → contactless cleaning unit), in some cases, the cleaning path of the substrate is in the reverse direction (noncontact cleaning unit → contact cleaning unit ). For example, the substrate that has been pre-cleaned in the pre-cleaning area and then enters the cleaning part may be first cleaned in the second non-contact cleaning unit, then cleaned in the first cleaning unit, and then transferred to and discharged from the transporting part.

In the non-contact type cleaning unit 500 shown in the drawing, the cleaning time can be gradually changed by using various types of cleaning liquids in one cleaning unit, so that the processing time in the non-contact type cleaning unit 500 is shorter than that in the contact type cleaning unit 400 The number of the contact type cleaning units 402 and 404 can be arranged to be larger than the number of the non-contact type cleaning units 502 and 504.

2, the cleaning part 300 is provided with a second buffer module B2 for accommodating a substrate to be supplied to the next cleaning unit when the cleaning process of the substrate is performed in the next cleaning unit, .

Accordingly, the cleaning unit, which has not been subjected to the cleaning process earlier than the cleaning time deviations of the plurality of cleaning units, does not have the substrate, and the substrate having been subjected to the cleaning process in each cleaning unit is moved to the second buffer module B2, .

The second buffer module B2 can be configured in a similar manner to the first buffer module B1 but since the substrate 10 moves between the cleaning units 400 and 500 by the transfer unit 310, The height of the holder 911 relative to each other can be configured to be unbalanced as shown in Fig.

In other words, a plurality of cradles 911 on which the fixing protrusions 911a are formed are arranged in the vertical direction, so that the substrate 10 to be loaded into the cleaning units 400 and 500 can be received and accommodated. A pure water supply portion 918 for supplying pure water is provided for each of the cradles 911 to supply pure water or cleaning liquid to the substrate 10 to maintain the substrate 10 in a wet state.

Each of the cradles 911 is fixed to a frame 915 extending in the vertical direction and a plurality of cradles 911 together with the floor support 910 are moved in the vertical direction 910d by the driving portion M, The height of the substrate 10 can be adjusted to a height that the unit 310 can grasp.

The second buffer module B2 may be disposed in a different footprint area than the cleaning units 400 and 500, as shown in FIG. When the second buffer module B2 is disposed in a different footprint area than the cleaning units 400 and 500, the time required for the transferring unit 310 to move the substrate 10 to the next cleaning unit is shortened The second buffer module B2 may be configured to move between the cleaning units 400, When the substrate 10 is to be supplied to the contact type cleaning unit 400 by the transfer unit 310, the second buffer module B2 moves close to the contact type cleaning unit 400, It is possible to shorten the time for supplying the substrate 10 which is being held by the second buffer module B2 to the contact type cleaning unit 400. [ When the substrate 10 is to be supplied to the non-contact type cleaning unit 500 by the transfer unit 310, the second buffer module B2 moves close to the non-contact type cleaning unit 500, The time for supplying the substrate 10 in the module B2 to the non-contact type cleaning unit 500 can be shortened.

On the other hand, it may be arranged in the same footprint area as any one or more of the cleaning units 400 and 500 as shown in Fig. As shown in FIG. 24, when the second buffer module B2 is stacked on the cleaning units 400 and 500 or located below the cleaning units 400 and 500, it occupies no additional footprint, Since the transfer unit 310 of the robot arm type can be moved between the cleaning units 400 and 500 and the second buffer module B2 without any change of direction, It is possible to obtain a simpler effect.

Although the figure shows a configuration in which one second buffer module B2 is disposed in one footprint area, the present invention can be provided with two or more second buffer modules B2 in one footprint area.

First of all, the second buffer module B2 is preferably disposed between the contact type cleaning unit 400 and the non-contact type cleaning unit 500. Here, the meaning of the term 'between' includes the 'space' between the contact type cleaning unit 400 and the non-contact type cleaning unit 500, but the processing in the contact type cleaning unit 400 and the process in the non- 500 ") < / RTI > As a result, the total cleaning time (tact time) in the cleaning part 300 can be reduced.

In other words, since the contact type cleaning method and the non-contact type cleaning method are essentially different in cleaning mode, the processing time for cleaning the substrate 10 in the contact type cleaning unit 400 is shorter than the processing time for cleaning the substrate 10 in the non-contact type cleaning unit 500 Most of the difference between the cleaning time and the cleaning time occurs. Thus, the substrate cleaned in any one or more of the contact cleaning units 402, 404 may be removed from the contact cleaning units 402, 404 and the non-contact cleaning unit 502, 404 during the remainder of the time before being supplied to the non- The second buffer module B2 is provided between the first and second buffer modules 502 and 504 to place the substrate 10 on standby so that the contact cleaning process of the substrate 10 can be performed in the contact type cleaning units 402 and 404 The non-contact type cleaning units 502 and 504 can supply the substrates to the second buffer module B2 one by one and continue the non-contact type cleaning process continuously. Therefore, Can be increased.

On the other hand, the plurality of cleaning units 402, 404, 502, and 504 constituting the cleaning part 300 include a blocking unit that blocks each cleaning space independently from other spaces.

27) provided for enclosing the periphery of the substrate and providing an independent cleaning processing space, and an opening / closing unit for opening / closing the entrance / exit of the casing (502b, ...) Member (502a, ... in Fig. 27).

By allowing the respective cleaning spaces of the plurality of cleaning units 402, 404, 502, and 504 to be independently blocked by the shielding unit as described above, the fumes generated during cleaning of the substrate 10 can be cleaned It is possible to obtain an effect of preventing a cleaning error and a deterioration in washing due to the inflow of water into the cleaning space of the unit.

The casing 502b of the cleaning units 402, 404, 502 and 504 and the opening and closing members 502a, ... are structured so as to prevent leakage of fumes from the respective cleaning spaces .

27, the opening and closing member 502a is linearly moved in the vertical direction along the vertical direction and is configured to open and close the entrance of the casing 502b. The contact surfaces of the opening and closing members 502a and 502b are formed in a stepped shape, It is possible to provide a packing member 152, 154, 156, 150 for sealing in the gap between the casing 502b of the cleaning unit 502 and the opening and closing member 502a, It is possible to obtain an effect of sealing each cleaning space of the plurality of cleaning units 402, 404, 502, and 504 more effectively.

As the packing member 150, an elastic material such as rubber, urethane, or silicone may be used, and the material of the packing member 150 may be variously changed according to required conditions and design specifications.

Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims. It will be understood that the present invention can be changed.

10: substrate 100: polishing part
110: polishing plate 120: carrier head
201: Cleaning fluid dispensing part 210: Casing
212: opening / closing member 220: substrate holder
230: cleaning liquid spraying part 240,260: heterogeneous fluid spraying part
250: steam jetting unit 270: megasonic generator
300: Cleaning part 400: Contact cleaning unit
420: chemical supply unit 430: foreign matter removing unit
432: contact member 434: ultrasonic wave generator
440: pressing member 450: frictional force adjusting section
452: connecting member 454:
456: Brush moving part 460: Vertical load adjusting part
462: vertical connecting member 464:
466: Brush moving part 500: Non-contact type cleaning unit
520: Cradle 530: Collection container
532 to 538: recovery cup 540: chemical sprayer
550: steam jetting portion 560: heterogeneous fluid jetting portion
570: isopropyl alcohol jetting section 901, 911:
908: Cleaning liquid supply part B: Buffer module
B1: first buffer module B2: second buffer module

Claims (35)

A substrate processing system comprising:
An abrasive part for performing a chemical mechanical polishing (CMP) process on the substrate;
A pre-cleaning region in which pre-cleaning is performed on the substrate on which the polishing process is completed;
A cleaning part for cleaning the substrate subjected to the preliminary cleaning process in the preliminary cleaning area;
A buffer module installed on at least one of the polishing part and the cleaning part to provide a space for waiting the next process by positioning the substrate;
The substrate processing system comprising:
The method according to claim 1,
Wherein a liquid is supplied to a substrate positioned in the buffer module to maintain a wet state of the substrate.
The method according to claim 1,
Wherein the buffer module includes a first buffer module provided in the polishing part to receive the substrate on which the polishing process has been completed in the polishing part when the preliminary cleaning process of the substrate is performed in the preliminary cleaning area Substrate processing system.
The method according to claim 1,
Wherein the first buffer module is provided with a plurality of mounts for mounting the plurality of substrates.
5. The method of claim 4,
The polishing part is configured to perform the polishing process on the polishing table while the carrier head moves while gripping the substrate,
Wherein the first buffer module is disposed between the path through which the carrier head travels and the pre-cleaning area.
5. The method of claim 4,
And the cradle circulates in a vertical direction component.
The method according to claim 6,
The polishing part is configured to perform the polishing process on the polishing table while the carrier head moves while gripping the substrate,
Wherein the first buffer module travels between the travel path of the carrier head and the pre-cleaning area.
The method according to claim 6,
The polishing part is configured to perform the polishing process on the polishing table while the carrier head moves while gripping the substrate,
Wherein the first buffer module receives and deposits the substrate from the carrier head in a state in which any one of the circulating rests is located on the upper side.
9. The method according to any one of claims 1 to 8,
Wherein in the preliminary cleaning region, the substrate on which the polishing process has been completed is unloaded to perform the preliminary cleaning, or preliminary cleaning is performed on the substrate in the buffer module.
10. The method of claim 9,
And a cleaning fluid ejecting unit provided in the pre-cleaning area and ejecting a cleaning fluid to a surface of the substrate.
11. The method of claim 10,
Wherein the cleaning liquid injected from the cleaning fluid injecting portion is at least one of chemical, SC1 (Standard Clean-1, APM), ammonia, sulfuric acid, hydrogen peroxide, and DIW.
11. The method of claim 10,
Wherein the cleaning fluid injector includes a steam injector for injecting steam onto the surface of the substrate.
11. The method of claim 10,
Wherein the cleaning fluid ejection portion comprises a heterogeneous fluid ejection portion for ejecting heterogeneous fluids on the surface of the substrate.
14. The method of claim 13,
The heterogeneous fluid injector may include:
A first fluid supply unit for supplying a first fluid;
A second fluid supply unit for supplying a second fluid different from the first fluid; Including,
Wherein the first fluid and the second fluid are injected onto the surface of the substrate in a mixed or separated state.
14. The method of claim 13,
The heterogeneous fluid injector may include:
A dry ice supply unit for supplying dry ice particles;
A fluid ejecting unit for ejecting fluid onto a surface of the substrate; Including,
Wherein the dry ice particles and the fluid are injected onto the surface of the substrate in a mixed state with each other.
11. The method of claim 10,
And a megasonic generator provided in the pre-cleaning area and supplying vibrational energy to the surface of the substrate.
9. The method according to any one of claims 1 to 8,
And a cleaning brush provided in the pre-cleaning area and rotating in contact with the surface of the substrate.
9. The method according to any one of claims 1 to 8,
And a substrate mounting part provided in the pre-cleaning area and on which the substrate is mounted,
Wherein the substrate is pre-cleaned while unloaded to the substrate mounting portion.
9. The method according to any one of claims 1 to 8,
And an inversion unit provided in the pre-cleaning area, for receiving the substrate in the pre-cleaning area and inverting the substrate,
Wherein the substrate on which the polishing process has been completed is transferred to the pre-cleaning area by the carrier head, and then pre-cleaned by the inversion unit in the pre-cleaning area.
20. The method of claim 19,
A first mode for transferring the substrate from the carrier head for transferring the substrate from the polishing part to the reversing unit after the substrate is transferred to the buffer module;
A second mode in which the polishing head directly transfers the substrate from the carrier head to the reversing unit;
And the substrate is transferred to the reversing unit by any one of the first and second substrates.
9. The method according to any one of claims 1 to 8,
Further comprising a shielding unit for shielding the preliminary cleaning processing space of the preliminary cleaning region from other spaces while the preliminary cleaning is proceeding using the chemical in the preliminary cleaning region.
9. The method according to any one of claims 1 to 8,
The cleaning part comprises:
A plurality of cleaning units stacked along the vertical direction, each cleaning unit performing cleaning on the substrate;
A transfer unit for transferring the substrate from any one of the plurality of cleaning units to another one of the plurality of cleaning units;
The substrate processing system further comprising:
23. The method of claim 22,
Wherein the buffer module includes a second buffer module provided in the cleaning part to accommodate a substrate to be supplied to the first cleaning unit when the cleaning process of the substrate is performed in the first cleaning unit that is any one of the plurality of cleaning units The substrate processing system comprising:
24. The method of claim 23,
The plurality of stacked cleaning units may include:
A contact type cleaning unit stacked in a vertical direction on one footprint area;
A non-contact type cleaning unit stacked in a vertical direction on another one of the footprint areas;
The substrate processing system comprising:
25. The method of claim 24,
Wherein the second buffer module includes a second buffer module disposed between the non-contact type cleaning unit and the contact type cleaning unit.
26. The method of claim 25,
Wherein the second buffer module includes a plurality of mounts for mounting the plurality of substrates.
27. The method of claim 26,
Wherein the second buffer module is stacked in a footprint area occupied by either the non-contact type cleaning unit or the contact type cleaning unit.
25. The method of claim 24,
The contact type cleaning unit includes:
A cleaning brush provided rotatably and contacting the surface of the substrate;
A chemical supply unit for supplying a chemical to a contact portion between the cleaning brush and the substrate while the cleaning brush contacts the substrate;
The substrate processing system further comprising:
29. The method of claim 28,
Wherein the chemical is at least one of SC1 (Standard Clean-1, APM), sulfuric acid, hydrogen peroxide, and hydrofluoric acid (HF).
25. The method of claim 24,
The non-contact type cleaning unit includes:
And a cleaning fluid ejecting portion for ejecting a cleaning fluid onto the surface of the substrate.
31. The method of claim 30,
The washer fluid is sprayed from the cleaning fluid injection assembly is a chemical, SC1 (Standard Clean-1, APM), ozone, hydrofluoric acid (O ₃ HF), hydrofluoric acid (HF), ammonia, hydrogen peroxide, sulfuric acid, a chemical (chemical), pure water (DIW ). ≪ / RTI >
31. The method of claim 30,
Wherein the cleaning fluid injector includes a steam injector for injecting steam onto the surface of the substrate.
31. The method of claim 30,
Wherein the cleaning fluid ejection portion comprises a heterogeneous fluid ejection portion for ejecting heterogeneous fluids on the surface of the substrate.
34. The method of claim 33,
The heterogeneous fluid injector may include:
A dry ice supply unit for supplying dry ice particles;
A fluid ejecting unit for ejecting fluid onto a surface of the substrate; Including,
Wherein the dry ice particles and the fluid are injected onto the surface of the substrate in a mixed state with each other.
23. The method of claim 22,
Further comprising a shielding unit for shielding the cleaning space of the cleaning unit independently from other spaces,
The blocking unit includes:
A casing provided to surround the periphery of the substrate and providing an independent cleaning processing space;
An opening and closing member that linearly moves along the vertical direction and opens and closes the entrance of the casing;
The substrate processing system comprising:

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