KR102459016B1 - Wafer treating system - Google Patents

Abstract

The present invention relates to a substrate processing system, comprising: a polishing surface cleaning unit for cleaning a polishing surface of a substrate on which a polishing process has been performed; a reversing unit for inverting the substrate by 180 degrees; By having an opposite surface cleaning unit for cleaning the opposite surface of the substrate inverted by the inversion unit, by cleaning both the polishing surface and the opposite surface of the substrate in the cleaning part, foreign matter adhered to the opposite surface of the substrate Provided is a substrate processing system that increases yield by suppressing errors from occurring after a polishing process.

Description

Substrate processing system {WAFER TREATING SYSTEM}

The present invention relates to a substrate processing system, and more particularly, to a substrate processing system that solves a substrate contamination problem in a post-polishing process.

As the semiconductor device is manufactured by integrating fine circuit lines with high density, a corresponding precise flat polishing is performed on the substrate surface. In order to more precisely polish the substrate, a chemical mechanical polishing process (CMP process) in which not only mechanical polishing but also chemical polishing is performed is performed.

That is, a semiconductor package is manufactured in a form in which fine devices are mounted by performing a planar polishing process on the substrate to precisely control the thickness of the polishing layer. In this process, contamination by adhering abrasive particles, slurry, etc. to the polished surface of the substrate is generated, and contamination by adhering abrasive particles or slurry to the opposite surface of the substrate is also generated.

Nevertheless, in the related art, as only the polishing surface is cleaned after the flat polishing process of the substrate is performed, the abrasive particles or slurry deposited on the opposite surface of the substrate remain on the opposite surface of the substrate, and during the processing process after the polishing process, the polishing surface is cleaned. Due to foreign substances such as abrasive particles or slurry deposited on the opposite surface, there is a problem in that an error occurs in the process of manufacturing a semiconductor package by cutting and dividing the substrate into a plurality of parts.

Therefore, there is an urgent need for a method to solve the problem of foreign substances on the opposite surface of the substrate during the manufacturing process of the semiconductor package as described above.

The present invention was devised under the above technical background, to solve the problem of contamination of the opposite surface of the substrate generated during the flat polishing process for manufacturing a semiconductor package, and to solve the problem of errors due to foreign substances in the process after polishing do.

In order to achieve the above object, the present invention provides a polishing surface cleaning unit for cleaning the polishing surface of the substrate on which the polishing process has been performed; a reversing unit for inverting the substrate by 180 degrees; By having an opposite surface cleaning unit for cleaning the opposite surface of the substrate inverted by the inversion unit, by cleaning both the polishing surface and the opposite surface of the substrate in the cleaning part, foreign matter adhered to the opposite surface of the substrate Provided is a substrate processing system that increases yield by suppressing errors from occurring after a polishing process.

The term 'opposite surface' described in the present specification and claims is defined to refer to a surface opposite to the polishing surface on the side on which a film such as a pattern, oxide, or metal is formed.

As described above, according to the present invention, by cleaning the opposite surface of the substrate, it is possible to obtain the effect of solving the problem of defects due to foreign matter in the process after polishing.

In addition, the present invention can obtain the effect of cleaning the opposite surface of the substrate by inverting it 180 degrees by the inversion unit after cleaning the polishing surface of the substrate in the cleaning part.

And, the present invention provides a method of facilitating 180 degree inversion while being able to quickly move a substrate between cleaning chambers by providing an empty space allowing inversion of the substrate between a plurality of cleaning chambers in which various cleaning apparatuses are installed. effect can be obtained.

1 is a plan view showing a substrate processing system according to a first embodiment of the present invention;
Figure 2 is a plan view of the abrasive part of Figure 1;
3 is a view for explaining the operating principle of a substrate carrier moving along a guide rail moving to a connection rail;
Fig. 4 is a perspective view of the substrate carrier of Fig. 3;
Figure 5 is a longitudinal sectional view of Figure 4;
Figure 6 is a perspective view showing a docking unit docked to the substrate carrier of Figure 3;
7A to 7D are views for explaining a substrate transfer method of the cleaning part of FIG. 1;
8 is a view showing a contact type cleaning device installed in the first cleaning chamber;
9 is a view showing a non-contact cleaning apparatus installed in the second cleaning chamber and the third cleaning chamber;
10 is a plan view showing a substrate processing system according to a second embodiment of the present invention;
11 is a perspective view showing the configuration of the cleaning chambers arranged in a row of FIG. 10;
Fig. 12 is a plan view showing a part of the cleaning part of Fig. 10;
Figure 13 is a perspective view showing the substrate transfer unit of Figure 12;
14 is a partially enlarged perspective view of the grip portion of FIG. 13;
15A to 15H are diagrams for explaining a substrate transfer method.

Hereinafter, a substrate processing system 1 according to a first embodiment of the present invention will be described in detail with reference to the accompanying drawings. However, in describing the present invention, the same or similar reference numerals are assigned to known functions or configurations, and descriptions thereof will be omitted in order to clarify the gist of the present invention.

As shown in Fig. 1, the substrate processing system 1 according to the first embodiment of the present invention includes a substrate supply unit Xo for supplying a new substrate W to be subjected to a processing process, and a substrate supply unit Xo from the substrate supply unit Xo. A transfer arm TR1 that receives the substrate W and supplies the substrate to the polishing part X1, a polishing part X1 that polishes the substrate received from the transfer arm TR1, and the polishing part X1 It is comprised including the cleaning part X2 which cleans the board|substrate W.

The substrate supply unit Xo stores a plurality of substrates W on which the processing process is to be performed in the cassette FOUP, and the transfer arm TRo can reach the transfer arm TR1. Place the substrate W as it is. Although not shown in the drawings, the substrate W positioned in the substrate supply unit Xo may be directly transported by the transfer arm TR1 without passing through the mounting unit PP.

The transfer arm TR1 receives the substrate W from the substrate supply unit Xo and supplies it to the loading unit LU of the polishing part X1 . In the cassette FOUP, a front surface on which a pattern is formed or a deposition film is formed is mounted facing upward. At this time, the transfer arm TR1 is taken out of the cassette FOUP and transferred to the substrate loading units LU1 and LU2 LU of the polishing part X1 in a 180-degree inverted state. Thereby, as for the board|substrate transmitted to the grinding|polishing part X1 by transmission arm TR1, a grinding|polishing surface turns into an attitude|position to which a grinding|polishing surface turns to an upper side, and a reverse surface turns to a downward direction.

The transfer arm TR1 may advantageously serve to pick up the substrate W and place it in a predetermined position, but the present invention is not limited thereto, and the substrate W is transferred from the cassette FOUP of the substrate supply unit Xo to the polishing part. Various configurations and means that can be delivered to (X1) can be utilized. For example, it may be configured to be picked up and transported in an adsorption state, or a robot arm as shown in the drawing.

The polishing part X1 is moved by loading the substrate W supplied from the transfer arm TR1 on the substrate carrier C with a loading unit LU, and the loading unit LU by mounting the substrate W. The substrate carrier C is moved along the path R to perform the polishing process of the substrate W, and the substrate carrier C is moved to perform the polishing process with respect to the substrate W mounted on the substrate carrier C. The polishing platens (P1-1, P1-2, P2-1, P2-2) arranged on the movement path R to move, and the carrier holder H1 moving along a predetermined path in a state in which the substrate carrier C is accommodated. -1, H1-2, H2-1, H2-2; It includes an unloading unit (UU) for unloading.

Here, the first guide rail G1 is disposed on the first movement path R1 through which the substrate carrier C moves, and the second guide rail G1 is disposed on the second movement path R2 through which the substrate carrier C moves. G1 is disposed, and a third guide rail G1 is disposed on the third movement path R3 through which the substrate carrier C moves. As shown in the drawing, the first movement path R1 and the second movement path R2 are spaced apart from each other, and a third movement path R3 is provided therebetween.

Although the configuration in which the first movement path R1, the second movement path R2, and the third movement path R3 are all arranged in a straight line is exemplified in the drawing, it may be formed in a curved shape, and a straight line and a curved line It may be formed in a mixed form. In addition, although not shown in the drawings, the guide rail G1 may be arranged to move the substrate carrier C in various closed curve shapes such as an oval or a circular shape.

And, the 1-1 position (S1-1) facing the end (S1e) of the first movement path (R1) and the second position (S2) facing the end (S2e) of the second movement path (R2) A first connection path R4 connecting -1) is formed. A first connection rail CR1 is installed on the first connection path R4, and a 1-1 carrier holder H1-1 that can move even while holding the substrate carrier C on the first connection rail CR1 ) and the 1-2 first carrier holder (H1-2) are installed to be movable (88).

The 1-1 carrier holder H1-1 and the 1-2 carrier holder H1-2 may move along the first connection rail CR1 within a range that does not interfere with each other, but generally the 1-1 carrier holder The holder H1-1 is used to reciprocate the distance between the one end S1e of the first guide rail G1 and the one end S3e of the third guide rail G3, and the 1-2 carrier holder H1- 2) is used to reciprocate the distance between one end S2e of the second guide rail G2 and one end S3e of the third guide rail G3.

Through this, the substrate carrier C may come and go between one end of the first guide rail G1 and the third guide rail G3 via the first-first carrier holder H1-1, and the first and second guide rails G1 and G3 One end of the second guide rail G2 and the third guide rail G3 can come and go through the carrier holder H1-2.

According to another embodiment of the present invention, one carrier holder is provided on the first connection rail CR1 to move along the entire length of the first connection path R4 along the first connection rail CR1, and the second The connecting rail CR2 may also be provided with one other carrier holder so as to move along the second connecting rail CR2 along the entire length of the second connecting path R5.

Similarly, the 1-2-th position S1-2 facing the other end S1e' of the first movement path R1 and the second-second position S2e' facing the other end S2e' of the second movement path R2 A second connection path R5 connecting the second positions S2-2 is formed. A second connection rail CR2 is installed on the second connection path R5, and the second connection rail CR1 has a 2-1 second carrier holder H2-1 that can move even while holding the substrate carrier C. ) and the 2-2 carrier holder (H2-2) are installed to be movable (88).

The 2-1 th carrier holder H2-1 and the 2-2 carrier holder H2-2 may move along the second connection rail CR2 within a range that does not interfere with each other, but generally, the 2-1 th carrier holder (H2-1) is used to reciprocate the distance between the other end S1e' of the first guide rail G1 and the other end S3e' of the third guide rail G3, and the 2-2 carrier holder H2 -2) is used to reciprocate the distance between the other end S2e' of the second guide rail G2 and the other end S3e' of the third guide rail G3.

Through this, the substrate carrier C can come and go between the other end of the first guide rail G1 and the other end of the third guide rail G3 even via the second-first carrier holder H2-1, The other end of the second guide rail G2 and the other end of the third guide rail G3 can come and go through the 2-2 carrier holder H2-2.

Here, the 1-1 grinding wheel P1-1 and the 1-2 grinding wheel P1-2 are disposed on the first virtual line L1, which is an extension of the first movement path R1, and the second 2- The first polishing surface plate P2-1 and the second polishing surface plate P2-2 are disposed on the second virtual line L1 which is an extension of the second movement path R2.

At this time, the 1-1 grinding wheel P1-1 and the 1-2 grinding wheel P1-2 are both arranged on the first movement path R1, and the 2-1 grinding wheel P2-1 ) and the 2-2 grinding wheel P2-2 may both be disposed on the second movement path R2. In this case, in a state in which the substrate carrier C is positioned on the first guide rail G1 disposed on the first movement path R1 and the second guide rail G2 disposed on the second movement path R2, these The polishing process of the substrate W is performed on the polishing plates P1-1, P1-2, P2-1 and P2-2.

In each of the polishing plates P1-1, P1-2, P2-1, and P2-2, a chemical mechanical polishing process using a slurry may be performed, or only a mechanical polishing process without a slurry may be performed. The substrate W carried by the substrate carrier C is subjected to a polishing process while the polishing surface is in contact with the polishing pad Px of the polishing platen P, and accordingly, the polishing surface of the substrate W has a predetermined thickness It is polished to become flat as it reaches

When the chemical mechanical polishing process is performed, a slurry supply unit, a conditioner, etc. are disposed on the polishing platen P. When the mechanical polishing process is performed, a solution supply unit for supplying a liquid (pure water or alkaline water, etc.) to the substrate are placed When the mechanical polishing process is performed on the polishing platen P, a polishing pad having a lower hardness than that of a urethane-based polishing pad installed when the chemical mechanical polishing process is performed is coated on the polishing platen.

More preferably, as shown in Figs. 1 and 2, the 1-1 grinding wheel (P1-1) is disposed on the first movement path (R1), and the 2-1 grinding wheel (P2-1) is disposed on the second movement path R2, but the 1-2 grinding wheel P1-2 and the second polishing wheel P2-2 are arranged on the first connection path R4. That is, the first movement path R1 through which the substrate carrier C can move is a part of the first virtual line L1, and the second movement path R2 through which the substrate carrier C can move is the second It belongs to a part of the virtual line L2.

Here, the 1-2 grinding wheel P1-2 and the 2-2 grinding wheel P2-2 are disposed on the first connection path R4, the 1-2 grinding wheel P1-2 And a part of the 2-2 polishing surface plate (P2-2) may be interspersed in the first movement path (R1) or the second movement path (R2), but the 1-2 polishing surface plate (P1-2) and the second movement path (R2) It is defined that the substrate carrier C is located in the first connection path R4 at a position where the polishing process of the substrate is performed on the -2 polishing platen P2-2.

In this way, when the 1-2 grinding wheel P1-2 and the 2-2 grinding wheel P2-2 are disposed on the first connection path R4, the substrate carrier C is moved to the carrier holder H1- In the state accommodated in 1, H1-2), the polishing process of the substrate is performed on the 1-2 polishing surface plate P1-2 and the 2-2 polishing surface plate P2-2. Through this, the length (L) of the abrasive part (X1) can be significantly reduced compared to the prior art, so that it is possible to arrange the abrasive part (X1) in a narrow area in the field, thereby obtaining an advantageous effect of further improving the efficiency of space can

The substrate carrier C moves independently on the guide rails G1, G2, G3; G, and the carrier holders H1-1, H1-2, H2-1 on the connection rails CR1, CR2; CR. , H2-2; is moved by the movement of the carrier holder (H) in a state accommodated in H). A rectangular shape formed by a plurality of vertical lines in the layout views of FIGS. 1 and 2 is a simplified representation of the substrate carrier (C).

4 and 5, the substrate carrier (C) has an N-pole permanent magnet (128n) and an S-pole permanent magnet (128s) alternately arranged on the upper side, and a driving motor or a pneumatic supply device is provided therein It can be configured in a non-powered state. Accordingly, as shown in FIG. 3, by controlling the current direction of the power source 89 applied to the coil 90 installed in the frame F formed on the upper side of the polishing platens P1, P2; P, The linear motor moves along the guide rail (G).

On the other hand, although not shown in the figure, a coil and a power applying device (for example, a power supply using a battery or a slip ring) are provided on the substrate carrier (C), and an N pole is provided at a position opposite to the coil provided on the substrate carrier. Permanent magnets and S-pole permanent magnets are alternately arranged, so that the substrate carrier (C) may move along the guide rail (G). In addition, various known driving devices may be provided on the substrate carrier C and configured to move along the guide rail G.

And, when the substrate carrier (C) is located on the upper side of the polishing platen (P), the docking unit (D) is coupled to the substrate carrier (C), the rotational driving force and the substrate (W) for rotationally driving the substrate (W) Pneumatic pressure is supplied to press downward.

To this end, as shown in FIGS. 4 and 5, a magnetic coupler 124 in which permanent magnets of N poles and S poles are alternately arranged on the inner circumferential surface to receive the rotational driving force is formed, and the docking unit (D) Permanent magnets of N poles and S poles are alternately arranged along the circumferential direction also on the outer peripheral surface of the drive shaft 186, so that the drive shaft 186 of the docking unit (D) approaches the magnetic coupler 124 of the substrate carrier (C). When it rotates in the inserted state, the rotational driving force is transmitted to the magnetic coupler 124 to be rotationally driven (124r). Accordingly, the rotating shaft 125 rotating in conjunction with the magnetic coupler 124 rotates together (125r), and the rotational driving force of the rotating shaft 125 rotates the vertical shaft 126 by a power transmission means such as a gear (126r) It is transmitted to the polishing head CH while rotating, and rotationally drives the substrate W during the polishing process. At this time, a guide shaft 124o may be formed in the central portion of the magnetic coupler 124 to guide the driving shaft 186 of the docking unit D to be inserted into the magnetic coupler 124 .

In addition, on the outer peripheral surface of the substrate carrier (C), a pneumatic supply port (123x) to which a pneumatic pipe is coupled is formed on the outer surface, and the docking unit (D) is docked in proximity (8, 8') to the substrate carrier (C), While the coupling portion 187 of the pneumatic pipe 187a of the docking unit D is fitted to the pneumatic supply port 123x, the grinding rotating through the pneumatic supply paths 123 and 129 extending from the pneumatic supply port 123x It is transmitted to the head (CH). At this time, since the polishing head CH is driven by rotation 126r during the polishing process, a rotary union RU is installed on the pneumatic supply paths 123 and 129 to smoothly supply pneumatic pressure to the rotationally driven polishing head CH. be able to

In addition, the substrate carrier (C) continues to not rotate during the movement path along the guide rail (G) and the connection rail (CR). Accordingly, the docking unit D may be configured to be docked only on one side of the substrate carrier C, but in this case, the gap between the third guide rail G3 and the first guide rail G1 and the third guide rail ( Since any one of the gap between G3) and the second guide rail G2 needs to be larger than necessary, the overall space efficiency is lowered.

Accordingly, as shown in FIG. 1, the docking unit D is disposed on the outside (lower side with respect to FIG. 1) with respect to the first guide rail G1, and the docking unit with respect to the second guide rail G2. (D) is also arranged on the outside (upper side with respect to FIG. 1), it is effective to increase the overall space efficiency to be configured to dock by moving (8, 8') in opposite directions in opposite directions. At this time, since the substrate carrier C moves the paths R1 , R2 , R3 , R4 , R5 in a non-rotating state while moving the guide rail G, the substrate carrier C moves upward and downward (see FIG. 1 ). ) to be coupled with the docking unit (D) approaching from, as shown in FIG. Thereby, it is possible to obtain the advantage of avoiding the complicated control and structure of rotating the substrate carrier C while keeping the arrangement of the substrate processing system more compact.

In addition, an upper roller 127U and a lower roller 127L are rotatably formed on both sides of the substrate carrier C to ride on the guide rail G and move without rocking. In some cases, only the upper roller 127U is provided on the substrate carrier C to be mounted on the guide rail G, and the clamping member is in close contact with the guide rail at the position where the polishing process is performed, so that the substrate during the polishing process is performed. It is also possible to prevent the position shift of the carrier (C). The substrate carrier C maintains a non-rotating state while moving a path along the guide rail C and the connection rail CR.

In the drawings, reference numeral 121, which is not described, denotes a connection coupling part of the substrate carrier C with the polishing head CH.

Meanwhile, as shown in FIG. 10 , according to another embodiment of the present invention, the process of moving the substrate W for the polishing process performed on the polishing part X1 is performed by the transfer arms TR3 and TR4. (W) can also be picked up and transported.

On the other hand, the docking unit (D) is fixed to the frame (F) as shown in Figure 6, so that it can be coupled to the substrate carrier (C) moving along the guide rail (G) horizontal reciprocating movement (8) is possible is installed To this end, when the rotating shaft 182 is driven by the moving motor 181 to rotate, the moving plate 184 reciprocates 8 on the rotating shaft 182 by the principle of a lead screw.

In addition, a rotation drive motor 185 is fixed to the moving plate 184 and a drive shaft 186 driven to be rotated by the rotation drive motor 185 is provided to move the moving plate 184 by the moving motor 181 . As a result, the driving shaft 186 is inserted into the magnetic coupler 124 of the substrate carrier (C) to be in a state capable of transmitting the rotational driving force to the substrate carrier (C). At the same time, as the coupling portion 187 of the pneumatic supply pipe 187a is coupled with the pneumatic supply unit 123x of the substrate carrier C according to the movement of the moving plate 184 , it is in a state in which pneumatic pressure can also be supplied.

As shown in FIG. 3 , the carrier holder H is provided with a holder rail HR for accommodating the substrate carrier C, and moves along the guide rail G regardless of the arrangement of the connection rail CR. It is configured to accommodate the substrate carrier (C). To this end, the coil 209 is also formed on the upper side of the carrier holder (H), and the operation of moving to the carrier holder (H) by interaction with the permanent magnets 128 arranged on the upper side of the substrate carrier (C). be able to

At this time, in order to prevent the impact of the substrate carrier (C) in the process of moving the substrate carrier (C) from the guide rail (G) to the holder rail (HR) of the carrier holder (H), the substrate carrier (C) is the carrier When moving to the holder (H), the holder rail (HR) may move toward the guide rail (G) to reduce or eliminate a step or a step difference.

At this time, the connection rail CR maintains a spaced apart state from the guide rail G, and as shown in FIG. 3 , may be disposed with a vertical height difference.

Two carrier holders H are arranged for each one of the connecting rails CR1, CR2; CR. A 1-1 carrier holder H1-1 and a 1-2 carrier holder H1-2 are installed on the first connection rail CR1 to move along the first connection rail CR1. In addition, a 2-1 th carrier holder H2-1 and a 2-2 th carrier holder H2-2 are installed on the second connection rail CR2 to move along the second connection rail CR2.

The 1-1 first carrier holder H1-1 may accommodate the substrate carrier C positioned on any one of the first guide rail G1 and the third guide rail G3, and accommodate the substrate carrier C. It is possible to reciprocate along the first connection rail CR1 in one state, and the substrate carrier C accommodated while reciprocating along the first connection rail CR1 is one end S1e of the first guide rail G1. and one end S3e of the third guide rail G3 moves to a movable position.

Similarly, the first-second carrier holder H1-2 may accommodate the substrate carrier C positioned on any one of the third guide rail G3 and the second guide rail G2, and the substrate carrier ( It is possible to reciprocate along the first connection rail CR1 in a state that accommodates C), and the substrate carrier C accommodated while reciprocating along the first connection rail CR1 is the third guide rail G3. It moves to a position where it can move to either one of the one end S3e and the one end S2e of the second guide rail G2.

In addition, the 2-1 th carrier holder H2-1 can accommodate the substrate carrier C located on any one of the first guide rail G1 and the third guide rail G3, and the substrate carrier C It is possible to reciprocate along the second connecting rail CR2 in a state of accommodating the S1e') and the other end S3e' of the third guide rail G3 moves to a movable position.

Similarly, the 2-2 carrier holder H2-2 can accommodate the substrate carrier C located on any one of the third guide rail G3 and the second guide rail G2, and the substrate carrier ( C) can be reciprocally moved along the second connecting rail CR2 in a state of accommodating it, and the substrate carrier C accommodated while reciprocating along the second connecting rail CR2 is the third guide rail G3. It moves to a position where it can move to either one of the other end S3e' and the other end S2e' of the second guide rail G2.

Accordingly, the substrate carrier C may move freely between the guide rail G and the connection rail CR as needed. As such, as the movement path of the substrate carrier C is formed with the guide rail G and the connection rail CR, even if the guide rail G and the connection rail CR form a path forming a vertex, the substrate carrier ( The advantage that C) can move smoothly is obtained, and a compact arrangement structure can be implemented by forming the space indicated by X1 smaller even when the same number and size of abrasive platens are installed.

That is, the first guide rail G1 is disposed so that the substrate W held by the substrate carrier C can be polished on the 1-1 polishing platen P1-1. Similarly, the second guide rail G2 is disposed so that the substrate W held by the substrate carrier C can be polished on the second polishing platen P2 .

A polishing platen is not disposed on the third guide rail G3 , and a path through which the substrate carrier C moves is formed. However, since two carrier holders (H) are arranged in each of the connecting rails (CR), from the ends (S1-1, S1-2) of the connecting rail (CR) to the other ends (S2-1, S2-2) In order to move, since it cannot be moved at once, one end S3e and the other end S3e' of the third guide rail G3 serve as a temporary loading place for the substrate carrier C to change the carrier holder H.

The loading unit LU may have various configurations for mounting the substrate W on the substrate carrier C. For example, Korean Patent Publication Nos. 10-1389533, 10-116387, 10-0997651, and It may be a configuration disclosed in Korean Patent Application Laid-Open No. 10-2017-0004552, and the contents of these publications are incorporated as a part of this specification. Although only one loading unit LU may be formed, the first loading unit LU1 and the second loading unit LU2 are respectively formed at positions biased to the first moving path R1 and the second moving path R2. This is preferable in terms of reducing the process time for moving the substrate carrier C to the first and second moving paths R1 and R2, respectively.

The unloading unit UU accommodates the substrate W when the suction pressure for mounting the substrate W is removed from the substrate carrier C. Although only one unloading unit UU may be formed, the first unloading unit UU1 and the second unloading unit UU2 are located at positions biased toward the first and second movement paths R1 and R2, respectively. is formed, and is preferable in terms of shortening a transport path that is alternately transported to the first cleaning path L1 and the second cleaning path L2 of the cleaning part X2.

In the loading unit LU and the unloading unit UU, the 2-1 carrier holder H2-1 and the 2-2 second moving along the second connection path R5 riding on the second connection rail CR2 In a state in which the substrate carrier C is accommodated in the carrier holder H2 - 2 , the substrate W is loaded into the substrate carrier C or the substrate W is unloaded from the substrate carrier C .

The substrate carrier C moves along the second connecting rail CR2 in a state accommodated in the 2-1 th carrier holder H2-1 or the 2-2 carrier holder H2-2, while the polishing process is scheduled to be performed. A new substrate W is supplied from the loading unit LU by the transfer arm TR1 and the substrate W, which has completed the polishing process, is transferred to the unloading unit UU in a preliminary cleaning device (not shown). The cleaning chambers C1, C2, C3, and C4 are arranged in a state in which the substrate W pre-cleaned before being transferred to the cleaning part X2 by is transferred to the cleaned cleaning area X2.

That is, in the substrate processing system 1 configured as described above, the substrate W is inverted 180 degrees by the transfer arm TR1 and supplied to the loading unit LU of the polishing part X1, so that the polishing surface is lowered. It is mounted on the lower side of the substrate carrier C by the loading unit LU, with the opposite side facing upward.

As shown in FIGS. 1 and 2 , the substrate processing system 1 has a vertical symmetric structure, so that two substrates W are simultaneously input and the process can be performed. However, the process according to the present invention is not limited thereto, and as described above, the substrate carrier C is free along the first guide rail G1, the second guide rail G2, and the third guide rail G3. Since the material can be moved one by one, the four polishing plates (P1-1, P1-2, P2-1, P2-2) can be sequentially moved while the four substrates are supplied one by one, and polishing can be performed in four steps, and two substrates each. As this is supplied, it is also possible to perform three-step polishing and one-step polishing. However, for convenience, hereinafter, the configuration in which two substrates W are input and the same process is performed will be described in detail.

When the substrate W is mounted on the lower side of the substrate carrier C, the substrate carrier C moves along the first guide rail R1 and is positioned on the 1-1 polishing plate P1-1. Then, the docking unit 180 is docked to the substrate carrier (C), pneumatic pressure is supplied, and the substrate (W) mounted on the polishing head (CH) under the substrate carrier (C) is subjected to a 1-1 polishing platen (P1). -1) A flat polishing process is performed by rubbing the polishing surface of the substrate with the polishing pad Px while rotating while pressing the polishing pad Px coated thereon.

Here, the polishing head CH is provided with a pressure chamber divided into a plurality of similarly as disclosed in Korean Patent Application Laid-Open No. 10-2016-0106241, and by controlling the pressure of the pressure chamber, the surface of the membrane is flat. By pressing the substrate W, the amount of polishing per unit time between the substrate W and the polishing pad Px is adjusted for each area of the substrate W.

At this time, the polishing process of the substrate W may be performed on two or more polishing platens. In this case, even if the polishing process of the substrate on the 1-1 polishing platen P1-1 is firstly finished, the substrate W is moved along the first guide rail G1 by the substrate carrier C in the first- It may be transferred to the second polishing platen P1-2, and a secondary polishing process may be performed in the first second polishing platen P1-2. In this case, since the primary polishing process and the secondary polishing process are performed under different polishing conditions, the amount of polishing per unit time is adjusted to be lower in the secondary polishing process than in the primary polishing process, so that the rear surface of the substrate becomes more It can be polished to a smooth surface.

In some cases, any one of the primary polishing process and the secondary polishing process may be performed by a mechanical polishing process, and the other may be achieved by a chemical mechanical polishing process. Also, different slurries may be used in the primary polishing process and the secondary polishing process.

And, in order to prevent foreign substances from adhering due to drying of the polishing surface of the substrate, before transferring to the cleaning part X2, the rear surface of the substrate on which the polishing process has been performed is soaked in a cleaning solution/pure water of a wet bath (WB). While waiting in the immersed state, when the substrate becomes capable of supplying the substrate to the first cleaning chamber C1 of the cleaning part X2, the unloading units UUR and UUL separate the substrate from the substrate carrier C.

Then, the transfer arm TR1 supplies the substrate from the unloading units UUR and UUL to the first cleaning chamber C1 of the cleaning part X2 to perform a cleaning process of the substrate. In this case, the substrate unloaded from the unloading units UUR and UUL may be preliminarily cleaned at the unloaded position.

The pre-cleaning area P1 is provided in the polishing part X1 to unload the substrate W on which the polishing process has been completed, and to perform pre-cleaning on the unloaded substrate W. That is, the unloading units UU1 and UU2 are provided in the preliminary cleaning area P1 .

For reference, in the present invention, the pre-cleaning of the substrate W refers to a method for maximally cleaning foreign substances present on the surface of the substrate W (in particular, the rear surface of the substrate) before cleaning in the cleaning part X2. can be understood as a process. In particular, in the preliminary cleaning of the substrate W, it is possible to remove a relatively large foreign material (for example, a foreign material having a size larger than 100 nm) among foreign substances present on the surface of the substrate W, and Organic matter present on the surface can be removed.

As described above, since the substrate W on which the polishing process is completed is unloaded in the preliminary cleaning region P1 and the preliminary cleaning is performed together, there is no need to additionally provide a separate space for performing the preliminary cleaning. , it is possible to maintain almost the same without changing or adding the layout of the existing equipment, and it is possible to reduce the increase in the degree of contamination of the cleaning part X2 as the polished substrate W directly enters the cleaning part.

More preferably, a blocking unit for blocking the preliminary cleaning processing space of the preliminary cleaning area P1 from other spaces while the preliminary cleaning is performed in the preliminary cleaning area P1 may be provided. Here, the preliminary cleaning processing space of the preliminary cleaning region P1 may be understood as a space in which preliminary cleaning is performed, and the preliminary cleaning processing space may be provided in a chamber structure independently closed by the blocking unit. Here, the blocking unit may be provided in various structures capable of providing an independent closed space blocked from the outside.

The preliminary cleaning in the preliminary cleaning area P1 may be performed in various cleaning methods according to required conditions and design specifications. For example, in the preliminary cleaning region P1 , a cleaning fluid may be sprayed onto the substrate W or preliminary cleaning may be performed by friction cleaning using a brush.

The substrate W on which the polishing process has been completed in the polishing part X1 is transferred to the cleaning part X2, and is main in the plurality of cleaning chambers C1, C1', C2, and C3 provided in the cleaning part X2. A cleaning process is performed.

The cleaning part X2 is a transfer arm TR1 that transfers the substrate W that has been polished in the polishing part X1 to the cleaning part X2 and moves the substrate between the cleaning chambers C in the cleaning part. and a polishing surface cleaning unit for cleaning the polished surface of the substrate W on which the polishing process has been performed; It is configured to include an opposite surface cleaning unit for cleaning the opposite surface of the substrate reversed by TR2, and a drying unit (not shown) for drying the substrate W.

Here, the polishing surface cleaning unit includes a first cleaning chamber (C1, C1') provided with a first cleaning unit (FIG. 8) for contact cleaning the substrate W with a cleaning brush BR, and polishing the substrate W and a second cleaning chamber C2 provided with a second cleaning unit (FIG. 9) for non-contact cleaning by spraying a cleaning fluid downward in an upward-facing posture.

Here, two or more of the first cleaning chambers C1 and C1' are arranged in series, so that two or more steps of contact cleaning may be performed on one substrate W.

Accordingly, as shown in FIG. 7A , when the transfer arm TR1 receives the substrate W from the unloading unit UU of the polishing part X1 and moves to the first cleaning chamber C1 (60d1), , in the first cleaning chamber (C1) of the first contact cleaning with a relatively low pressure to first separate the thick foreign matter. As described above, by performing the first contact cleaning with a low pressing force, it is possible to prevent damage such as scratches on the substrate by foreign substances such as abrasive particles separated from the substrate.

When the contact cleaning process in the first cleaning chamber C1 is finished, as shown in FIG. 7B , the substrate W is transferred 60d2 by the transfer arm TR1 to the first cleaning chamber C1' (60d2). . In the second first cleaning chamber C1', contact cleaning is performed with a higher pressure than that of the first contact cleaning to reliably separate fine foreign substances. In this way, the second contact cleaning is performed by contact cleaning with a higher pressing force, thereby removing fine foreign matter remaining on the substrate with high frictional force, thereby increasing the cleaning effect of the substrate.

For reference, the substrates W shown with hatched lines in FIGS. 7A to 7D are shown one by one to explain the transfer path of the substrate, but the present invention simultaneously cleans a plurality of substrates in the cleaning chambers C1, C1', C2, C3;

For the contact cleaning process, the contact cleaning apparatus shown in FIG. 8 is installed in the first cleaning chambers C1 and C1'. For example, the contact cleaning device is configured to move the cleaning brush BR in the vertical direction BRd by the lead screw LS installed on the support 80 , so that the space between the pair of cleaning brushes BR is In a state in which the substrate W is moved away from each other, the substrate W is placed between the brushes, and a pair of cleaning brushes BR are brought into close contact with the substrate W with an appropriate pressing force, and the substrate W is rotated in place. while cleaning the substrate W by a pair of cleaning brushes BR.

During the cleaning process, at least one of a cleaning liquid and pure water is supplied, so that foreign substances remaining on the substrate W can be easily separated from the substrate surface and cleaned.

As described above, in cleaning the substrate in the first cleaning chambers C1 and C1', the polishing surface and the opposite surface of the substrate W are simultaneously cleaned by the rotating brushes BR respectively contacting the polishing surface and the opposite surface. However, the configuration of the present invention is not limited thereto, and according to another embodiment of the present invention, the polishing surface and the opposite surface of the substrate may be simultaneously cleaned using a pair of cleaning brushes while the substrate W is fixed. Alternatively, only one surface of the substrate W may be contact-cleaned using one cleaning brush.

Although the drawing illustrates a configuration in which two first cleaning chambers C1 and C1' for performing the contact cleaning process are arranged in a row, according to another embodiment of the present invention, the first cleaning chambers C1 and C1' are required. 3 or more may be arranged, or only one may be arranged. In addition, with respect to the two or more first cleaning chambers C1 and C1' in which the contact cleaning process is performed, the contact cleaning process may be performed only in some (eg, one) first cleaning chambers of the substrate.

Then, when the contact cleaning process for the substrate W in the first cleaning chambers C1 and C1' is completed, as shown in FIG. 7C, the first cleaning chamber C1' by the inverting arm TR2 and C1) to the second cleaning chamber C2 (60d3), in the second cleaning chamber C2, a non-contact cleaning process for the polished surface of the substrate W is performed.

At this time, when the polishing surface of the substrate W faces the ground (lower side) in the first cleaning chambers C1 and C1', the reversing arm TR2 moves through the first cleaning chambers C1 and C1'. In the process of moving to the second cleaning chamber C2, the substrate W is rotated 180 degrees to invert the polishing surface of the substrate W so that it faces upward.

As shown in FIG. 9 , the contact cleaning apparatus installed in the second cleaning chamber C2 includes a substrate holder (not shown) that rotates while the substrate W is mounted, and a high pressure while the substrate W rotates. It is configured to include a cleaning fluid spray nozzle 70 for cleaning by spraying the cleaning fluid of the substrate (W). Accordingly, the substrate W transferred 60d3 to the second cleaning chamber C2 by the inverting arm TR2 rotates with the polishing surface facing upward while rotating at a high pressure from the cleaning fluid injection nozzle 70 on the upper side. It is cleaned in a non-contact manner by the sprayed cleaning liquid.

Here, the cleaning fluid used in the non-contact cleaning process of the second cleaning chamber C2 is sprayed to the rear surface of the substrate such as cleaning liquid, steam, or a heterogeneous fluid in which gas and liquid are mixed to perform preliminary cleaning. It may be understood as a concept including all target materials, and the present invention is not limited or limited by the type of cleaning fluid. For example, the cleaning fluid may be variously applied such as pure water, heterogeneous fluid, gas, gas, and chemical, for example, a chemical including any one or more of SC1 (Standard Clean-1, APM), ammonia, and hydrogen peroxide is applied. can

Accordingly, it is possible to completely remove the remaining foreign substances separated from the adhered state on the surface of the substrate after the contact cleaning process in the first cleaning chambers C1 and C1', and the adhered foreign substances can also be removed by the cleaning fluid sprayed at high pressure. are separated

Then, when the contact cleaning process for the substrate W in the second cleaning chamber C2' is completed, as shown in FIG. 7D, the substrate W is reversed from the second cleaning chamber C2 by the inverting arm TR2. It is moved (60d4) to the third cleaning chamber (C3) of the surface cleaning unit.

At this time, since the polishing surface of the substrate W faces upward in the second cleaning chamber C2, the process of moving from the second cleaning chamber C2 to the third cleaning chamber C3 by the inversion arm TR2 The substrate (W) is rotated 180 degrees in the inversion (60r) so that the polishing surface of the substrate (W) faces downward and the opposite surface of the substrate (W) faces upward. That is, the inversion arm TR2 grips the substrate and moves it from the second cleaning chamber C2 where the last cleaning process of the polishing surface cleaning unit has been performed to the third cleaning chamber C3 of the opposite surface cleaning unit, while the substrate W Inverted 180 degrees and supplied to the cleaning unit on the opposite side.

In this way, in order for the reversing arm TR2 to serve as the reversing unit, the grip portion Tg for gripping the substrate W with respect to the body portion Ta of the arm is preferably configured to be rotatable by 180 degrees or more. Here, the grip part Tg may be of a type that physically grips the edge of the substrate, or may be of a type of suction and grip by applying suction pressure to the plate surface or edge of the substrate.

On the other hand, abrasive particles, slurries, etc. are buried on the opposite surface of the substrate W that has undergone the polishing process while passing through the polishing surface P of the polishing part X1, the unloading unit UU, and the like, leaving foreign substances. However, since the amount of foreign matter remaining on the opposite surface of the substrate W is small compared to the amount of foreign matter remaining on the polished surface of the substrate W, the one-time non-contact generally performed in the third cleaning chamber C3. It can be completely removed by a cleaning process. Furthermore, since the opposite surface may be cleaned together with the polishing surface of the substrate W by the pair of cleaning brushes BR in the first cleaning chambers C1 and C1', non-contact cleaning of the opposite surface of the substrate W Through the process, it is possible to completely remove the foreign substances remaining on the opposite surface of the substrate (W).

In the embodiment illustrated in the drawings, the configuration in which the opposite surface cleaning unit is constituted of one third cleaning chamber C3 is exemplified, but the opposite surface cleaning unit has two or more third cleaning units to be subjected to a non-contact cleaning process of two or more steps. It may consist of a cleaning chamber.

The contact cleaning apparatus installed in the third cleaning chamber C3 is similar to the second cleaning chamber C2, as shown in FIG. 9, a substrate holder (not shown) that rotates while the substrate W is mounted. and a cleaning fluid injection nozzle 70 for cleaning by spraying a high-pressure cleaning fluid onto the substrate W while the substrate W rotates. Accordingly, the substrate W transferred 60d4 to the third cleaning chamber C3 by the reversing arm TR2 rotates with the opposite surface facing upward while rotating at a high pressure from the cleaning fluid injection nozzle 70 on the upper side. It is cleaned in a non-contact manner by the sprayed cleaning fluid.

Here, the cleaning fluid used in the non-contact cleaning process of the third cleaning chamber C3 includes all of the spray target material that can be sprayed to the rear surface of the substrate to perform preliminary cleaning, such as cleaning liquid, steam, and a heterogeneous fluid. It can be understood as a concept, and the present invention is not limited or limited by the type of cleaning fluid. For example, the cleaning fluid may be variously applied such as pure water, heterogeneous fluid, gas, gas, and chemical, for example, a chemical including any one or more of SC1 (Standard Clean-1, APM), ammonia, and hydrogen peroxide is applied. can

If necessary, when the cleaning of the opposite surface of the substrate W is completed by the cleaning fluid sprayed from the cleaning fluid jet nozzle, the substrate W is rotated without supply of the cleaning fluid, and the cleaning fluid is removed by centrifugal force acting on the substrate. A drying process of the substrate may be performed in the second cleaning chamber C2. In addition to this, the second cleaning chamber C2 may be further provided with a drying gas injection unit for spraying the drying gas, and the drying gas may be supplied into the second cleaning chamber C2 while the drying process is being performed. The drying process of the substrate may be performed in a separately added drying chamber.

Through this, it is possible to completely remove foreign substances remaining on the opposite surface of the substrate after the contact cleaning process in the second cleaning chamber C2.

As described above, the substrate W, which has completed the main cleaning process in the cleaning part X2, has both the polished surface and the opposite surface in a clean state in which no foreign matter remains. transferred to the next process by Through this, according to the present invention, a plurality of cleaning chambers C1 , C1 ′, C2 , and C3 arranged in a line are performed along the cleaning path CL with respect to the substrate W after the polishing process in the polishing part X1 is completed. It is possible to completely clean the polishing surface and the opposite surface while moving, so that it is possible to obtain an advantageous effect of completely solving the problem of defects caused by foreign substances in the process after polishing.

In addition, according to the present invention, the substrate W is inverted by 180 degrees using a reversing unit in the form of a reversing arm TR2 in which the grip part is rotatable by 180 degrees to clean the surface opposite to the polished surface of the substrate W, It becomes possible to closely arrange a plurality of cleaning chambers C1, C1', C2, and C3 in a line for cleaning the surface opposite to the polishing surface of the substrate, so that the cleaning part X2 in a narrow space is equipped with cleaning equipment for the polishing surface and the opposite surface can be installed together to obtain the advantage of increasing space efficiency.

Hereinafter, the substrate processing system 2 according to the second embodiment of the present invention will be described in detail. However, in the description of the second embodiment of the present invention, the same or similar reference numerals are given to the same or similar functions or configurations as those of the first embodiment already described, and the description thereof is the main point of the second embodiment of the present invention. It is omitted for clarity.

10 to 15H, the substrate processing system 2 according to the second embodiment of the present invention includes a substrate supply unit (not shown) for supplying a new substrate W to be subjected to a processing process, and a substrate supply unit. A transfer arm TR1 that receives the substrate W from and supplies the substrate to the polishing part X1, a polishing part X1 that polishes the substrate received from the transfer arm TR1, and polishing in the polishing part X1 It is comprised including the cleaning part X2 which cleans the used board|substrate W.

The polishing part X1 is provided with a plurality of polishing plates P, and the polishing process of the substrate W is performed on the polishing platens P. The transfer of the substrate W to the plurality of polishing platens P may be done by the substrate carrier H as in the first embodiment, and by the transfer arms TR3 and TR4 as shown in FIG. may be transported.

The polishing process of the substrate W may be completed by one polishing process performed on one polishing platen P, or the polishing process may be performed stepwise on two or more polishing platens P.

The board|substrate W which the grinding|polishing process was complete|finished by the grinding|polishing part X1 is transferred to the board|substrate transfer unit 200 of the cleaning part X2 by the transfer arm TR4.

Said cleaning part X2 wash|cleans the grinding|polishing surface of the transfer arm TR1 which transfers the board|substrate W which the grinding|polishing is completed by the grinding|polishing part X1 to the washing|cleaning part X2, and the board|substrate W to which the grinding|polishing process was performed. A reversing unit having a polishing surface cleaning unit for cleaning the polished surface, a handler arm (HA) used to invert the substrate after cleaning the polishing surface by 180 degrees, and the reverse side of the inverted substrate using the handler arm (HA) It is configured to include a cleaning unit on the opposite side for cleaning, and a drying unit (not shown) for drying the substrate (W).

Similar to the above-described first embodiment, the polishing surface cleaning unit is composed of the first cleaning chambers C1 and C1' in which the contact cleaning process is performed and the second cleaning chamber C2 in which the non-contact cleaning process is performed. And, the cleaning unit on the opposite side is composed of a third cleaning chamber (C3) in which the non-contact cleaning process is performed. Since the detailed configuration thereof has been described in the first embodiment, it will be omitted here.

Here, the first cleaning chamber (C1, C1') and the second cleaning chamber (C2), which are the polishing surface cleaning units, and the third cleaning chamber (C3), which is the opposite surface cleaning unit, are arranged in a row, the polishing surface cleaning unit and An empty space Vx for inverting the substrate W by 180 degrees is provided between the opposite side cleaning units.

As shown in FIGS. 12 to 14 , the substrate transfer unit 200 changes the arrangement directions of the first cleaning chambers C1 and C1', the second cleaning chamber C2, and the third cleaning chamber C3. A plurality of substrate holding parts ( 220) is included.

Here, the plurality of substrate mounting units 220 reciprocate (99d) a section determined by the driving unit 215 driven to move along the moving rail 201, respectively, and at least some of them may move independently. 14, the substrate holder 220 is formed in an ∩-shaped cross-section, the upper side is provided with a blocked area, and the receiving surface 220s for mounting the substrate W downward therefrom is provided. It may be configured to be provided with a receiving portion (220a). In this way, by allowing the receiving surfaces 220s of the substrate W to be spaced apart from each other and only the edges of the substrate W to be mounted, the accommodating part for accommodating the substrate in each cleaning chamber C moves up and down and mounts the substrate in the received state. When the part 220 is retracted, the substrate W can be easily transferred to and positioned in the cleaning chamber C.

That is, the first substrate holder 221 reciprocates the path of supplying the substrate W to the first cleaning chamber C1 by digitizing the substrate in a posture in which the substrate polishing surface faces upward in the polishing part X1, and , and another first substrate holder 221 reciprocates along a path between the first cleaning chambers C1 and C1', and the second substrate holder 222 moves between the first cleaning chamber C1' and the second cleaning chamber. The path between the chambers C2 is reciprocated. That is, the first substrate holder 221 and the second substrate holder 222 move in the cleaning chambers of the polishing surface cleaning unit.

Here, as shown in FIG. 11 , when the first cleaning chambers C1 and C1 ′ and the second cleaning chamber C3 have the same distance, the three first substrate holder 221 and the second substrate holder The portion 222 may be configured to transfer the substrate W to the next cleaning chamber while synchronously reciprocating together. Through this, the control of transferring the substrate W in the polishing surface cleaning unit is simplified and the possibility of errors is reduced, thereby improving the reliability of the process.

Meanwhile, each of the cleaning chambers C1, C1', C2, and C3 is provided with an openable and openable shutter sh, and remains open while the substrate holding units 221, 222, 223 are transported. is positioned, and the shutter sh is positioned in a closed state during the cleaning process to prevent mixing of cleaning fluids used between adjacent cleaning chambers during the cleaning process. To this end, an interspace is provided between the respective cleaning chambers C, and the substrate mounting units 221 , 222 , 223 ; 220 stand outside the cleaning chamber while the cleaning process of the substrate is performed.

Meanwhile, the third substrate holder 223 is configured to reciprocate between the second cleaning chamber C2 and the third cleaning chamber C3. Since an empty space Vc is provided between the second cleaning chamber C2 and the third cleaning chamber C3 to invert the substrate W by 180 degrees, the third substrate holder 223 is mounted on another substrate. It is preferable that the movement is controlled independently of the parts 221-222. Then, when the third substrate holder 223 reaches the empty space Vx, the handler arm HA picks up the substrate W mounted on the receiving surface 220s of the third substrate holder 223 and takes it out. A state in which a rotation shaft 223x rotatable by 180 degrees by the driving unit M is provided in the third substrate accommodating part 223, and the third substrate accommodating part 223 is rotated by 180 degrees (223r) An inversion process in which the substrate W is turned over 180 degrees may be performed.

More specifically, as shown in FIG. 15A , the first substrate holder 221 receives the substrate (the hatched substrate, Wa) on which the polishing process has been completed in the polishing part X1 from the transfer arm TR4. , the substrate holders 221 , 222 moving in and out of the cleaning chambers C1 , C1 ′ and C2 of the polishing surface cleaning unit are synchronized and moved by the same distance 99d1 , thereby moving the substrate Wa into the first cleaning chamber Enter (C1). (The unhatched substrate W shown in the figure is shown to indicate that the process is performed together with the hatched substrate Wa) At this time, the shutters sh of the cleaning chamber C are all open. . Similarly, the third substrate holder 223 also moves independently to enter the other substrate W into the third cleaning chamber C3.

For reference, the substrate Wa shown with hatched lines in FIGS. 15A to 15G is shown with hatched lines to explain the transfer path of the substrate, and the present invention provides multiple substrates Wa and W simultaneously. and configured to move between the cleaning chambers C1 , C1 ′, C2 , C3 .

Then, as shown in FIG. 15B, the substrate holding units 221 and 222 moving back and forth between the cleaning chambers C1, C1' and C2 of the polishing surface cleaning unit are synchronized and retreated by the same distance 99d2, and the second The third substrate holder 223 that moves back and forth between the second cleaning chamber C2 and the third cleaning chamber C3 is also retracted 99d2 to be positioned outside the cleaning chambers C1, C1', C2, and C3. Then, after the shutter sh is closed to prevent the cleaning fluid from moving between the adjacent cleaning chambers C, the polishing surface cleaning process of the substrate Wa is performed in the first cleaning chamber C1. As described above, since the polishing surface cleaning process in the first cleaning chamber C1 is performed using a pair of brushes BR, the polishing surface and the opposite surface of the substrate Wa may be simultaneously contact cleaned.

When the first contact cleaning process in the first cleaning chamber C1 of the substrate Wa is completed, as shown in FIG. 15C , after opening the shutters sh of each cleaning chamber, another first substrate holder Reference numeral 221' retracts into the first cleaning chamber C1, receives the substrate Wa, and moves from the first cleaning chamber C1 to another first cleaning chamber C1' (70d2). Then, similarly, the plurality of substrate holding units 220, as shown in Fig. 15d, retreated 99d2 to the outside of the cleaning chamber C, and closed the shutter sh of each cleaning chamber C. Thereafter, the substrate Wa is subjected to a second contact cleaning process in the first cleaning chamber C1'.

When the second contact cleaning process in the first cleaning chamber C1' of the substrate Wa is completed, as shown in FIG. 15E, after the shutters sh of each cleaning chamber are opened, the second substrate holder ( 222 retracts into the first cleaning chamber C1' to receive the substrate Wa, and moves (70d3) from the first cleaning chamber C1' to the second cleaning chamber C2. Then, similarly, the plurality of substrate holding units 220 are retreated 99d2 to the outside of the cleaning chamber C, and after closing the shutter sh of each cleaning chamber C, the substrate Wa is A non-contact cleaning process is performed in the second cleaning chamber C2.

When the non-contact cleaning process in the second cleaning chamber C2 of the substrate Wa is finished, as shown in FIG. 15F , the shutters sh of each cleaning chamber are opened, and then the third substrate holder 223 is moves into the second cleaning chamber C2, receives the substrate Wa, and moves from the second cleaning chamber C2 to the empty space Vc (70d4). Then, the substrate W accommodated in the third substrate holder 223 is turned 180 degrees by the inversion unit so that the opposite side faces upwards.

To this end, as shown in Fig. 15G, the handler arm HA is configured such that the grip portion Tg for gripping the substrate Wa is rotatable by 180 degrees with respect to the handler body Ta. Accordingly, when the third substrate holder 223 is positioned in the empty space Vc, the handler arm HA grips the substrate Wa accommodated in the third substrate holder 223 and then the handler arm By rotating the grip portion Ta of (Ha) by 180 degrees to reverse the posture of the substrate Wa, and then placing the substrate Wa again on the receiving surface 220s on the third substrate holder 223, An inversion process of inverting the substrate Wa in a posture in which the opposite surface faces upward may be performed. That is, the handler arm HA can serve as a reversing unit.

Meanwhile, according to another embodiment of the present invention, since the third substrate holder 223 is provided with a rotation shaft 223x rotatable by 180 degrees, the third substrate holder 223 is positioned in the empty space Vc. You can also turn it 180 degrees and flip it over. In this state, after the handler arm HA grips the substrate Wa accommodated in the third substrate holder 223, the grip portion Ta of the handler arm Ha is rotated 180 degrees to rotate the substrate Wa. After inverting the posture of A reversal process of inverting this upward-facing posture may be performed. That is, the handler arm HA can serve as a reversing unit. Through this, the handler arm HA receives the substrate Wa in a state in which the third substrate holder 223 is inverted, so that the handler arm HA receives the substrate and again to the third substrate holder 223 . The laying process can be made easier.

On the other hand, according to another embodiment of the present invention, since the third substrate holder 223 is provided with a rotation shaft 223x rotatable by 180 degrees, the third substrate holder 223 is located in the empty space Vc. In the state rotated 180 degrees and turned over, the handler arm HA grips the substrate Wa accommodated in the third substrate holder 223 , and then retreats away from the third substrate holder 223 . , the inversion process may be performed in the form of receiving the substrate Wa from the handler arm Ha in a state in which the third substrate holder 223 is rotated by 180 degrees (position of FIG. 14 ). That is, the handler arm HA and the third substrate holder 223 together serve as an inversion unit. Through this, the structure of the handler arm HA is simplified and the advantage of being able to invert the substrate W 180 degrees within a short time can be obtained.

As described above, when the substrate Wa of the third substrate holder 223 is turned over 180 degrees and the opposite side faces upward, as shown in FIG. 15H , the third substrate holder 223 is cleaned for the third time. By entering the chamber C3, supplying the substrate Wa, and then retreating 99d2 so that the substrate holding units 220 are located outside the cleaning chamber C, the substrate is placed in the third cleaning chamber C3. (Wa) will be placed.

Then, a non-contact cleaning process is performed on the opposite surface of the substrate Wa in the third cleaning chamber C3. Then, the third substrate holder 223 is moved from the third cleaning chamber C3 to the outside (outside the right side of FIG. 15G ), and then a transfer arm that transfers the substrate Wa on which the cleaning process is completed to the next process. to (not shown).

In the cleaning part X2 as described above, the substrate transfer unit 200 is provided, and the inversion process of turning the substrate W 180 degrees is performed between the polishing surface cleaning unit and the opposite surface cleaning unit among a plurality of cleaning chambers. By providing the empty space Vc for this purpose, the transfer time of the substrate W can be greatly shortened compared to the first embodiment, thereby obtaining an advantageous effect of improving process efficiency.

In addition, as described above, in the present invention, a plurality of cleaning chambers C1 , C1 ′, C2 , and C3 arranged in a row are cleaned through the cleaning path CL with respect to the substrate W after the polishing process in the polishing part X1 is completed. ), it is possible to completely clean the polishing surface and the opposite surface, thereby solving the problem of defects caused by foreign substances in the semiconductor packaging process after polishing, thereby increasing the yield of the semiconductor device.

In the above, the present invention has been exemplarily described through preferred embodiments, but the present invention is not limited to such specific embodiments, and various forms within the scope of the technical idea presented in the present invention, specifically, the claims. may be modified, changed, or improved.

W: substrate C: cleaning chamber
C1, C1': first cleaning chamber C2: second cleaning chamber
C3: third cleaning chamber Vc: empty space
HA: Handler arm TR2: Reversing arm
D: docking unit C: substrate carrier
P: polishing plate Px: polishing pad
1, 2: substrate processing system 200: substrate transfer unit
210: guide rail 220: substrate holder
221, 221': first substrate holder 222: second substrate holder
223: third substrate holder

Claims (21)

a polishing part on which a polishing process of a substrate mounted on a substrate carrier is performed;
a cleaning part for cleaning the substrate on which the polishing process has been performed in the polishing part;
Including, in the cleaning part,
A moving rail arranged in a straight line and a plurality of substrate holding units having a receiving surface for mounting the substrate after the polishing process, including a cross section of an ∩ shape with an upper side blocked, the substrate holding unit including the substrate a substrate transfer unit mounted to move linearly and reciprocally;
a first cleaning chamber disposed on a linear reciprocating path of the substrate holder to contact and clean the polishing surface of the substrate;
a second cleaning chamber disposed adjacent to the first cleaning chamber in a linear reciprocating path of the substrate holder and for non-contact cleaning of the polishing surface of the substrate;
a third cleaning chamber spaced apart from the second cleaning chamber with an empty space therebetween in the linear reciprocating path of the substrate holder to clean the opposite surface of the substrate;
a handler arm for receiving the substrate on which cleaning of the polishing surface has been completed from the substrate holder in the empty space, flipping it 180 degrees, inverting it, and transferring the substrate back to the substrate holder;
wherein the substrates are sequentially moved to the first cleaning chamber, the second cleaning chamber, and the third cleaning chamber in which the substrates are arranged in a line by the substrate holding unit of the substrate transfer unit to be opposite to the polishing surface of the substrate A substrate processing system characterized in that the surface is cleaned.
delete delete delete The method of claim 1,
In the first cleaning chamber, a first first cleaning chamber and a second first cleaning chamber are sequentially arranged, and the pressing force for contact cleaning in the second first cleaning chamber is higher than the pressing force for contact cleaning in the first first cleaning chamber. A substrate processing system, characterized in that it is larger.
6. The method of claim 5,
The first cleaning chamber is provided with rotating brushes respectively contacting the polishing surface and the opposite surface of the substrate, and cleaning the polishing surface and the opposite surface of the substrate at the same time.
delete The method of claim 1,
In the third cleaning chamber, a cleaning fluid is sprayed onto the substrate to clean the opposite surface of the substrate.
9. The method of claim 8,
The cleaning fluid is a substrate processing system, characterized in that at least one of pure water, a heterogeneous fluid, a gas, a gas, and a chemical.
9. The method of claim 8,
The cleaning fluid is a substrate processing system, characterized in that it comprises at least one of SC1 (Standard Clean-1, APM), ammonia, and hydrogen peroxide.
delete delete delete delete delete delete The method of claim 1,
A substrate processing system, characterized in that at least some of the plurality of substrate holding units move independently.
The method of claim 1,
Among the plurality of substrate holders, a plurality of substrate holders that reciprocate within the polishing surface cleaning unit are synchronized with each other and move together, and the third substrate holders that move back and forth between the second and third cleaning chambers are independent. Substrate processing system, characterized in that moving to.



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