KR101816694B1 - Chemical mechanical polishing apparatus and control method thereof - Google Patents

Abstract

The present invention relates to a chemical mechanical polishing device and a controlling method thereof. The chemical mechanical polishing device comprises: a polishing part performing a chemical mechanical polishing (CMP) with respect to a substrate; an inverting unit vertically locating the substrate on which the polishing process is completed in a vertical cleaning position; and a cleaning unit pre-cleaning the substrate located in the vertical cleaning position. Foreign substances remaining on the substrate can be efficiently removed, and cleaning efficiency of the substrate is improved.

Description

Technical Field [0001] The present invention relates to a chemical mechanical polishing apparatus,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical mechanical polishing apparatus, and more particularly, to a chemical mechanical polishing apparatus capable of removing foreign matter remaining on a substrate while vertically arranging the substrate.

As semiconductor devices are fabricated with high density integration of fine circuit lines, corresponding precision polishing must be able to be performed on the wafer surface. In order to perform polishing of the wafer more precisely, a chemical mechanical polishing process (CMP process) in which chemical polishing as well as mechanical polishing is performed can be performed.

The chemical mechanical polishing (CMP) process is widely used for planarization to remove the height difference between the cell area and the peripheral circuit area due to the irregularities of the wafer surface generated by repeatedly performing masking, etching, and wiring processes during the semiconductor device manufacturing process, Polishing the surface of the wafer in order to improve the surface roughness of the wafer due to contact / wiring film separation and highly integrated elements.

The CMP process is performed by pressing the wafer in a state in which the process surface of the wafer faces the polishing pad to simultaneously perform the chemical polishing and the mechanical polishing of the process surface, So that a cleaning process is performed to clean the foreign substances on the process surface.

1, a chemical mechanical polishing process of a wafer is generally carried out in such a manner that when the wafer is supplied to the chemical mechanical polishing apparatus X1 in the loading unit 20, the wafer W is transferred to the carrier heads S1, S2, A chemical mechanical polishing process is performed on the plurality of polishing plates P1, P2, P1 ', P2' while moving along the predetermined path Po in a state of being closely contacted to the polishing surfaces S1 ', S2' . The wafer W subjected to the chemical mechanical polishing process is transferred to the loading table 10 of the unloading unit by the carrier head S and transferred to the cleaning unit X2 where the next cleaning process is performed, A step of cleaning the foreign substance adhering to the wafer W is performed in the step (70).

On the other hand, as semiconductors become finer and highly integrated, the importance of cleaning efficiency of wafers is increasing. Particularly, if foreign substances remain on the surface of the wafer even after the cleaning process of the wafer is finished in the cleaning module, the yield is lowered and the stability and reliability are lowered, so that the foreign substance in the cleaning module should be removed as much as possible.

To this end, there has been proposed a method of cleaning a wafer once before the polishing process has been completed and transferring the wafer to the cleaning module, removing the foreign substance, and then cleaning the wafer again, thereby improving the cleaning efficiency.

However, since a preliminary cleaning space for advancing the preliminary cleaning separately from the cleaning module has to be additionally provided, it is not only disadvantageous in layout of the equipment, but also complicates the process of transferring and cleaning the wafers and increases the cleaning time , Which leads to an increase in cost and a decrease in yield. Particularly, since the wafer unloaded to the unloading position after completion of the polishing process is transferred to a separate preliminary cleaning space, preliminary cleaning is performed, and then the wafer is subjected to a complicated transfer process to be transferred to the cleaning module. There is a problem that the process efficiency is lowered.

Accordingly, in recent years, cleaning efficiency and yield of the chemical mechanical polishing process can be improved, and various studies for reducing the cost have been made, but the development is still required.

An object of the present invention is to provide a chemical mechanical polishing apparatus capable of improving the cleaning efficiency and improving the yield.

In particular, it is an object of the present invention to primarily remove foreign matter remaining on a substrate in a state where the substrate is vertically arranged.

Another object of the present invention is to minimize the foreign matter remaining on the substrate before the cleaning process without changing or adding the layout of existing facilities or reducing the process efficiency.

According to a preferred embodiment of the present invention, there is provided a chemical mechanical polishing apparatus comprising: a polishing part for performing a chemical mechanical polishing (CMP) process on a substrate; And a cleaning unit for pre-cleaning the substrate placed in the vertical cleaning position.

This is because, in cleaning the substrate, the foreign substances remaining on the substrate are preliminarily preliminarily cleaned while the substrate is vertically arranged, and then the subsequent cleaning process of the substrate is performed in the cleaning part, So as to improve the cleaning efficiency of the substrate.

Particularly, by performing the preliminary cleaning of the substrate with the substrate placed in the vertical cleaning position, the cleaning fluid such as the cleaning liquid or the chemical used in the preliminary cleaning and the foreign material separated from the substrate remain on the surface of the substrate, It is possible to obtain an advantageous effect of improving the cleaning efficiency of the substrate.

Above all, by allowing the substrate to be disposed at the vertical cleaning position in the middle of the polishing surface of the substrate being inverted from the lower direction to the upper direction, the foreign substances remaining on the substrate can be removed It is possible to obtain an advantageous effect.

That is, it is also possible to arrange the substrate vertically through a rotary process using separate rotary equipment during the preliminary cleaning, but by allowing the substrate to be placed in the vertical cleaning position during the inversion process of the substrate, , The process of vertically arranging the substrate is simplified, and an advantageous effect of reducing the overall process can be obtained.

In addition, the pre-cleaning plate is reversed to the presbyopia in which the polishing process has been completed by the reversing unit, and the pre-cleaning is progressed in a state that the substrate is supported on the reversing unit, so that a separate space for advancing the pre- It is possible to obtain an advantageous effect that the layout of existing facilities can be changed or added, or the process order can be maintained almost unchanged.

In other words, it is also possible to transfer the substrate after the polishing process is completed to the cleaning part and carry the substrate to a separate cleaning area to proceed to the preliminary cleaning, and then to the cleaning part before proceeding to the subsequent cleaning process. In this case, Since the cleaning process must be transferred from the inversion area to another cleaning area and then transferred to the cleaning part, there is a problem that the overall process efficiency of the substrate is lowered. In order to additionally provide a separate cleaning area, There is a problem that space utilization is lowered and cost required for facility change increases because the layout of the facility must be changed or added. However, according to the present invention, by maintaining the process order of transferring the substrate after the polishing process is completed to the cleaning part after inverting the substrate in the reverse region, the foreign substance remaining on the substrate is preliminarily pre- It is possible to obtain an advantageous effect of minimizing the foreign matter remaining on the substrate before the subsequent cleaning process proceeds without lowering the process efficiency without changing or adding the layout of the existing facility.

Further, since the foreign substance remaining on the substrate can be removed as much as possible through the preliminary process performed in the reverse region before the subsequent cleaning process, the cleaning effect by the subsequent cleaning process can be enhanced and an advantageous effect of improving the cleaning efficiency can be obtained .

Preferably, the reversing unit includes a movable assembly, which is provided so as to be accessible and spaced from a common docking area where the substrate is unloaded from the polishing part, a rotating assembly rotatably connected to the movable assembly in a rotatable manner, And a grip assembly that grips the substrate.

Further, by allowing the substrate to be transferred to the inversion region after the substrate is received in the inversion unit in the common mounting region of the substrate formed on the transfer path of the carrier head for transferring the substrate along the predetermined circulation path on the region of the polishing portion, An advantageous effect of minimizing the transfer path of the head can be obtained. More preferably, another substrate for carrying out the polishing process can be loaded in the common mounting area.

Further, by causing the substrate placed in the vertical cleaning position to oscillate right and left during the preliminary cleaning progress, the cleaning efficiency of the cleaning fluid is maximized and an advantageous effect of lowering the amount of the cleaning fluid is obtained have. Moreover, since the substrate can be oscillated using the rotating assembly already provided for the reverse rotation of the substrate, there is no need to change or add equipment, and an advantageous effect of simplifying the structure and the process can be obtained.

In addition, by including the substrate rotating portion that rotates the substrate on the grip assembly while the preliminary cleaning is proceeding, the substrate is rotated in the circumferential direction during the preliminary cleaning, thereby improving the preliminary cleaning efficiency and uniformity of the substrate An advantageous effect can be obtained.

The cleaning unit may include at least one of a cleaning liquid spraying unit for spraying a cleaning liquid onto the surface of the substrate, a steam spraying unit for spraying steam onto the surface of the substrate, and a heterogeneous fluid spraying unit for spraying a heterogeneous fluid onto the surface of the substrate And a cleaning brush rotating in contact with the surface of the substrate. The preliminary cleaning may be performed under optimal conditions by selecting a preliminary cleaning type according to the characteristics of the substrate or the deposition characteristics It is possible to obtain an advantageous effect.

According to another aspect of the present invention, a method of controlling a chemical mechanical polishing apparatus includes a polishing step of polishing a substrate, a substrate placing step of placing the substrate having been polished in a vertical cleaning position, And a pre-cleaning step of pre-cleaning.

By performing the preliminary cleaning of the substrate with the substrate placed at the vertical cleaning position, the cleaning fluid such as the cleaning liquid or the chemical used in the preliminary cleaning and the foreign matter separated from the substrate remain on the surface of the substrate It is possible to obtain an advantageous effect of improving the cleaning efficiency of the substrate by allowing the substrate to fall down without being reattached and being naturally separated from the substrate.

Above all, by arranging the substrate in the vertical cleaning position in the middle of reversing the polishing surface of the substrate from the lower direction to the upper direction in the substrate placement step, the process of vertically arranging the substrate is simplified , An advantageous effect of reducing the overall process can be obtained.

Preferably, the oscillation step may include a step of oscillating the substrate placed in the vertical cleaning position to the left and right while the pre-cleaning is proceeding. By thus oscillating the substrate while the cleaning fluid is sprayed on the surface of the substrate and the preliminary cleaning progresses, it is possible to maximize the cleaning efficiency with the cleaning fluid and obtain the advantageous effect of further lowering the amount of the cleaning fluid used.

The method may further include a rotating step of rotating the substrate placed in the vertical cleaning position along the circumferential direction of the substrate while the preliminary cleaning is proceeding. As described above, the substrate is rotated in the circumferential direction while the preliminary cleaning progresses in a state where the substrate is arranged at the vertical cleaning position, thereby achieving an advantageous effect of increasing the preliminary cleaning efficiency and uniformity of the substrate.

For reference, the 'preliminary cleaning' of the substrate in the present invention means a cleaning process which is performed for the first time on the polished substrate, and a cleaning process for primarily cleaning the foreign substances existing on the surface of the substrate before cleaning Process.

In the present invention, the cleaning with the cleaning part can be understood as a finishing cleaning process for cleaning the foreign matter remaining on the surface of the substrate after the preliminary cleaning has proceeded.

As described above, according to the present invention, the cleaning efficiency can be improved and the cleaning process can be simplified.

Particularly, according to the present invention, by performing preliminary cleaning of the substrate with the substrate placed in the vertical cleaning position, the cleaning fluid such as the cleaning liquid or the chemical used in the preliminary cleaning, foreign matter separated from the substrate, It is possible to obtain an advantageous effect of improving the cleaning efficiency of the substrate by allowing the substrate to fall down without falling off or reattaching and naturally being separated from the substrate.

In addition, according to the present invention, by allowing the substrate to be disposed at the vertical cleaning position in the middle of reversing the polishing surface of the substrate from the lower direction to the upper direction, in other words, By placing the substrate in the vertical cleaning position during the process, it is possible to obtain a favorable effect of quickly disposing the substrate in the vertical cleaning position without lowering the process efficiency.

Furthermore, according to the present invention, the substrate is preliminarily cleaned by using the inversion unit for inverting the substrate without changing or adding the layout of the existing facility, so that the foreign matter remaining on the substrate before the cleaning process It is possible to obtain an advantageous effect of minimization.

In other words, it is also possible to transfer the substrate after the polishing process is completed to the cleaning part and carry the substrate to a separate cleaning area to proceed to the preliminary cleaning, and then to the cleaning part before proceeding to the subsequent cleaning process. In this case, Since the cleaning process must be transferred from the inversion area to another cleaning area and then transferred to the cleaning part, there is a problem that the overall process efficiency of the substrate is lowered. In order to additionally provide a separate cleaning area, There is a problem that space utilization is lowered and cost required for facility change increases because the layout of the facility must be changed or added. However, according to the present invention, by preliminarily cleaning the foreign matter remaining on the substrate in the reversing unit in which the substrate is inverted while maintaining the process sequence of inverting the substrate on which the polishing process has been completed in the reversing region and transferring the substrate to the cleaning part, It is possible to obtain an advantageous effect of minimizing the foreign matter remaining on the substrate before the subsequent cleaning process proceeds without lowering the process efficiency without changing or adding the layout of the existing facility.

In addition, according to the present invention, as much foreign matter remaining on the substrate can be removed as much as possible through the preliminary process performed before the subsequent cleaning process, the cleaning effect by the subsequent cleaning process can be enhanced and an advantageous effect of improving the cleaning efficiency can be obtained Can be obtained.

Further, according to the present invention, it is possible to reduce the cost of cleaning the substrate, and improve the process efficiency and yield.

In addition, according to the present invention, since various preliminary cleaning methods can be adopted according to the type and characteristics of the substrate, it is possible to effectively remove the foreign substances fixed on the surface of the substrate and to obtain an advantageous effect of improving the cleaning efficiency .

Further, according to the present invention, since foreign matter remaining on the substrate can be minimized, the defective rate of the substrate can be minimized, and an advantageous effect of improving stability and reliability can be obtained.

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 shows the construction of a conventional chemical mechanical polishing equipment,
2 is a view showing a chemical mechanical polishing apparatus according to the present invention,
FIGS. 3 and 4 are views for explaining the inverting unit of FIG. 2,
Fig. 5 is a view showing the cleaning liquid jetting unit as the cleaning unit of Fig. 2,
FIG. 6 is a view of the cleaning unit of FIG. 2,
FIGS. 7 to 10 are views showing a heterogeneous fluid ejection unit as the cleaning unit of FIG. 2;
11 is a view for explaining a substrate oscillation process by the inversion unit of FIG. 3,
Figs. 12 and 13 are views showing a modified example of the cleaning fluid jetting unit as the cleaning unit of Fig. 2,
14 is a view for explaining a substrate rotating unit provided in the reversing unit,
Figs. 15 and 16 show the cleaning brush of the cleaning unit of Fig. 2,
17 is a block diagram for explaining a control method of the chemical mechanical polishing apparatus according to the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments. For reference, the same numbers in this description refer to substantially the same elements and can be described with reference to the contents described in the other drawings under these rules, and the contents which are judged to be obvious to the person skilled in the art or repeated can be omitted.

2, a chemical mechanical polishing apparatus 10 according to the present invention includes a polishing part 100 that performs a chemical mechanical polishing (CMP) process on a substrate 10, a substrate 10 on which a polishing process is completed, And a cleaning unit 200 for pre-cleaning the substrate 10 disposed at the vertical cleaning position. The cleaning unit 200 includes a cleaning unit 200 for cleaning the substrate 10 in the vertical cleaning position.

The polishing part 100 may be provided in various structures capable of performing a chemical mechanical polishing process, and the present invention is not limited or limited by the structure and layout of the polishing part 100.

The polishing part 100 may be provided with a plurality of polishing platens 110 and the polishing pad 110 may be attached to the upper surface of each polishing platen 110. The substrate 10 supplied to the loading unit provided on the area of the polishing part 100 is placed on the upper surface of the polishing pad 110 supplied with the slurry in a state of being closely contacted with the carrier head 120 moving along a predetermined path The chemical mechanical polishing process can be carried out by rotating contact.

The carrier head 120 can move along a predetermined circulation path on the polishing part 100 area and the substrate 10 supplied to the loading position can be moved by the carrier head 120 in close contact with the carrier head 120 Lt; / RTI > Hereinafter, an example will be described in which the carrier head 120 is configured to move from a loading unit to a circulating path of a substantially rectangular shape through the polishing platen 110. [

The reversing unit 140 can be disposed on the area of the soft wave part so that the substrate 10 on which the polishing process has been completed can be placed at the vertical cleaning position and the substrate 10 on which the polishing process has been completed is supplied to the cleaning part 300 So that the polishing surface of the substrate 10 can be reversed in the opposite direction.

Here, the substrate 10 is disposed at the vertical cleaning position, which means that the substrate 10 is arranged perpendicular to the paper surface.

In addition, in the present invention, the polishing surface of the substrate 10 refers to a surface (bottom surface or top surface) of the substrate 10 to be polished, which is in contact with the polishing pad (see 110 in FIG. 2). The polishing surface of the substrate 10 (for example, the bottom surface of the substrate) may be disposed so as to face downward during the chemical mechanical polishing process, and the polishing unit 140 may be arranged such that the polishing surface of the substrate 10 faces upward The substrate can be turned upside down by 180 degrees.

Specifically, the reversing unit 140 includes a movable assembly 144, which is provided so as to be able to approach and separate from a common docking area where the substrate 10 is unloaded, and a movable assembly 144 rotatably connected to the movable assembly 144 And a grip assembly 148 that is coupled to the rotating assembly 146 and that grips the substrate 10.

The movable assembly 144 is provided so as to be able to approach and separate from the public mounting area P2 where the substrate 10 is unloaded from the polishing part 100. [

The common mounting area P2 of the substrate 10 can be variously changed according to required conditions and design specifications. The common docking area P2 can be provided on the movement path of the carrier head (for example, a circulation path) so that the movement path of the carrier head 120 can be shortened. More preferably, it is possible to load another substrate for carrying out the polishing process in the common mounting area P2.

That is, when the common docking area of the substrate is provided outside the movement path of the carrier head, since the carrier head must move along the movement path and then further move to the common docking area of the substrate provided outside the movement path, There is a problem that the movement path of the carrier head inevitably increases. However, when the common stationary area P2 of the substrate 10 is provided on the movement path of the carrier head 120, since the carrier head 120 only has to move the movement path, The path can be minimized.

The moveable assemblies 144 may be provided to be accessible and spaced apart in a common docking area in a variety of ways depending on the required conditions and design specifications. In one example, the movable assembly 144 is provided so as to be linearly movable from the common mounting area P2 to the reverse area P1 (or from the reverse area to the common mounting area) where the substrate 10 is inverted. In some cases, it is also possible to arrange that the movable assembly rotates with respect to one point and moves from the reverse region to the common stationary region.

The movable assembly 144 can be configured to move from the common dock area to the inversion area by the driving force by the driving assembly 142. [ For example, the movable assembly 144 can be linearly moved from the common mounting area P2 to the reversing area P1 by the driving force of the driving assembly 142. [

As the driving assembly 142, a conventional driving means capable of providing a driving force may be used, and the present invention is not limited or limited by the type and characteristics of the driving assembly 142. For example, as the drive assembly 142, a conventional linear motor can be used. In some cases, it is possible to construct the drive assembly with a combination of a conventional motor and a power transmitting member (for example, a gear or a combination of belts), or to construct a drive assembly using a screw member.

The grip assembly 148 is configured to selectively connect to the movable assembly 144 to grip the substrate 10 and the grip assembly 148 is selectively movable by the movable assembly 144 to the common docking area P2, (P1).

The rotary assembly 146 is rotatably connected to the movable assembly 144 and the grip assembly 148 is connected to the rotary assembly 146 so that as the rotary assembly 146 rotates, (Not shown).

The rotating assembly 146 may be constructed using conventional rotating shafts and driving means, and the structure and characteristics of the rotating assembly 146 may be variously changed according to required conditions and design specifications. In some cases, it is also possible that the grip assembly is mounted to the movable assembly, and the movable assembly is configured to rotate in a reverse direction to the drive assembly.

The grip assembly 148 may be provided in a variety of configurations to selectively grip the substrate 10, and the present invention is not limited or limited by the structure and characteristics of the grip assembly 148. The grip assembly 148 includes a first grip member 148a that supports one side of the substrate 10 and a second grip member 148b that faces the first grip member 148a and supports the other side of the substrate 10. [ And may include a grip member 148b.

The cleaning unit 200 is disposed on the area of the polishing part 100 and is provided for pre-cleaning the substrate placed in the vertical cleaning position by the reversing unit 140.

For reference, the preliminary cleaning of the substrate 10 in the present invention refers to preliminary cleaning of the substrate 10 before the cleaning of the cleaning part 300 is performed, primarily cleaning foreign substances present on the surface of the substrate 10 (in particular, the polishing surface of the substrate) As shown in FIG. Particularly, in the preliminary cleaning of the substrate 10, it is possible to remove a relatively large foreign substance (for example, a foreign substance having a size larger than 100 nm) among the foreign substances existing on the surface of the substrate 10.

By performing the preliminary cleaning of the substrate 10 with the substrate 10 placed at the vertical cleaning position using the reversing unit 140 as described above, the cleaning fluid such as the cleaning liquid or the chemical used in the preliminary cleaning An advantageous effect can be obtained that the foreign substances separated from the substrate do not remain on the surface of the substrate 10 or fall off without reattachment, and are naturally separated from the substrate.

The inversion unit 140 basically performs a process of inverting the substrate 10 and halts the reverse rotation of the substrate 10 during the process of reversing the substrate 10 so that the substrate 10 is vertically cleaned Position. Of course, it is also possible to arrange the substrate vertically through a separate rotary process during preliminary cleaning, but by allowing the substrate to be placed in the vertical cleaning position during the inversion process of the substrate, which is necessarily performed irrespective of the preliminary cleaning, It is possible to obtain a favorable effect of simplifying the process of disposing and reducing the overall process.

Specifically, the rotating assembly 146 disposes the substrate 10 in the vertical cleaning position while the preliminary cleaning is performed. That is, the substrate 10 received in the inversion unit 140 in the common docking area P2 may be vertically arranged as the rotation assembly 146 rotates 90 degrees after being transferred to the inversion area P1.

In addition, since the substrate 10 on which the polishing process is completed in the inversion area P1 is reversed and the preliminary cleaning is performed together, it is not necessary to additionally provide a separate space for advancing the preliminary cleaning. Therefore, The amount of contamination of the cleaning part 300 due to the direct entry of the polished substrate 10 directly into the cleaning part can be reduced.

Preferably, a blocking unit may be provided which intercepts the preliminary cleaning processing space of the inversion region from the other space while the preliminary cleaning of the substrate is performed in the inversion region. Here, the preliminary cleaning processing space of the inversion area can be understood as a space where preliminary cleaning of the substrate is performed, and the preliminary cleaning processing space can be provided as a chamber structure independently enclosed by the blocking unit.

The blocking unit may be provided in various structures capable of providing an independent closed space that is shielded from the outside, and the present invention is not limited or limited by the type and structure of the blocking unit.

The preliminary cleaning by the cleaning unit 200 can be carried out in various cleaning methods according to required conditions and design specifications.

In one example, the cleaning unit 200 may include a cleaning fluid spraying part 210 for spraying a cleaning fluid to the surface of the substrate to perform preliminary cleaning.

Herein, the cleaning fluid may be understood as a concept including all of the substances to be sprayed which are sprayed on the surface of the substrate, such as a cleaning liquid, steam, heterogeneous fluid, etc., and can perform preliminary cleaning. The invention is not limited or limited.

For example, referring to FIG. 5, the cleaning fluid injecting unit 210 may include a cleaning liquid injecting unit 220 that injects a cleaning liquid onto the surface of the substrate 10.

The cleaning liquid spraying unit 220 may be configured to spray various cleaning liquids onto the surface of the substrate 10 according to the required conditions. For example, the cleaning liquid spraying unit 220 may be configured to spray at least one of SC1 (Standard Clean-1, APM), ammonia, hydrogen peroxide, and DIW. For reference, since the preliminary cleaning processing space of the inversion area can be provided independently in a closed chamber structure, it is possible to use a chemical such as SC1 as the cleaning liquid, and to perform the preliminary cleaning using the chemical Therefore, it is possible to remove a part of the organic substances present on the surface of the substrate 10 before cleaning with the cleaning part.

Referring to FIG. 6, the cleaning fluid injecting unit 210 may include a steam injecting unit 230 for injecting steam generated from the steam generating unit 232 on the surface of the substrate 10.

Particularly, the steam sprayed from the steam spraying unit 230 is effective for removing organic substances present on the surface of the substrate 10. [ For reference, the steam injector 230 may be configured to inject steam at a temperature that can prevent damage to the substrate 10 while ensuring the efficiency of organic matter removal by steam. Preferably, the steam injector 230 can inject steam at a temperature of 60 ° C to 120 ° C.

Referring to FIGS. 7 to 10, the cleaning fluid injecting unit 210 may include a heterogeneous fluid injecting unit 240 that injects heterogeneous fluids onto the surface of the substrate 10.

The heterogeneous fluid injecting section 240 may be provided with various structures capable of injecting heterogeneous fluids. 7, the dissimilar fluid injecting unit 240 includes a first fluid supply unit 241 for supplying a first fluid, a second fluid supply unit 242 for supplying a second fluid different from the first fluid, And the first fluid and the second fluid may be injected onto the surface of the substrate 10 by a jetting means such as a conventional nozzle in a mixed or separated state.

7, the disparate fluid ejection unit 240 may include a first fluid supply unit 241 and a second fluid supply unit 242 provided independently, and may include a first fluid supply unit 241, In the second fluid supply part 242, the first fluid and the second fluid may be sprayed on the surface of the substrate 10 in a state where they are separated from each other.

8, the heterogeneous fluid injecting unit 250 includes a first fluid passage 251 through which a first fluid is supplied, a second fluid passage 252 through which a second fluid is supplied, And a mixed injection passage 253 in which the first fluid and the second fluid are mixed and injected. In the mixed injection passage 253, the first fluid and the second fluid are mixed with each other, Can be jetted at high speed onto the surface of the substrate 10.

The types and characteristics of the heterogeneous fluids that can be injected from the heterogeneous fluid injecting sections 240 and 250 can be variously changed according to required conditions and design specifications. In one example, the first fluid may be either a gaseous fluid or a liquid-phase fluid, and the second fluid may be either a gaseous fluid or a liquid-phase fluid. For example, the heterogeneous fluid injecting units 240 and 250 may be configured to inject pure water (DIW), which is a liquid phase fluid, and nitrogen (N ₂ ), which is a vapor phase fluid, together to increase the efficiency of removing foreign substances. In some cases, it is possible to use two different kinds of liquid fluids or two different kinds of vapor fluids as long as the efficiency of removing foreign matter and foreign matter by the different fluids can be ensured.

9 and 10, the cleaning fluid injecting unit 210 includes a heterogeneous fluid injecting unit 260 provided in a common docking area for injecting different kinds of fluids onto the surface of the substrate 10, The fluid injecting section 260 may include a dry ice supplying section 262 for supplying dry ice particles and a fluid injecting section 261 for injecting a fluid onto the surface of the substrate 10. [

The fluid jetting section 261 can be configured to jet various fluids according to the required conditions and design specifications. For example, the fluid injecting section 261 may be configured to inject at least one of a gaseous fluid and a liquid fluid. Hereinafter, an example in which the heterogeneous fluid injecting section 260 is configured to spray the vapor phase fluid 261a together with the dry ice particles 262a will be described. In some cases, the heterogeneous fluid jetting section may be configured to inject a liquid fluid (for example, DIW) together with the dry ice particles.

The fluid injecting section 260 may be provided with various structures capable of mixing the dry ice particles 262a and the fluid 261a to be sprayed. The fluid injecting section 260 includes a vapor fluid supply passage 261 to which the gaseous fluid 261a is supplied, a dry ice supply passage 262 to which the dry ice 262a is supplied, a vapor phase fluid 261a, And a jet body discharge passage 263 through which particles 262a are mixed and injected.

Hereinafter, an example will be described in which the dry ice supplied through the dry ice supply passage 262 is supplied as liquid carbon dioxide and passes through the discharge body discharge passage 263 to be solidified into dry ice solid particles.

To this end, the gaseous fluid supply passage 261 is provided with a first end face constant region S1 having a constant cross-section along the flow direction of the gaseous fluid 261a, and a second end face portion 261a gradually decreasing in section along the flow direction of the gaseous fluid 261a Sectional reduction area S2 and a part of a second sectional area S31 having a constant section along the flow direction of the vapor phase fluid 261a.

Accordingly, the gaseous fluid 261a passes through the first end face section S1 and the flow is stabilized. As the pressure fluid passes through the end face decrease area S2, the pressure gradually decreases to increase the flow velocity of the gas. The flow is stabilized while passing through a part of the step S31. At this time, as the outlet of the branch passage (dry ice supply passage) is formed at the first point which is a predetermined distance from the point where the second section constant region S31 starts, the pressure The flow velocity of the gas is increased while passing through the cross sectional reduction area S2 and the flow starts to pass through the second cross section constant area S31 and the flow becomes stable.

In this state, the liquid state high-pressure carbon dioxide flows into the first position (X1) of the second cross-sectional area through the branch passage (dry ice supply passage), and the liquid state carbon dioxide flows into the second cross- When the pressure reaches the predetermined area S31, the pressure is reduced and solidified into dry ice solid particles.

On the other hand, the gas supply unit may be configured to supply at least one of inert gas such as air, nitrogen gas, and argon gas through the gaseous fluid supply passage 261. When the inert gas is supplied through the gas phase fluid supply passage 261, the chemical reaction is suppressed on the substrate 10, so that the cleaning effect can be enhanced.

The branch passage is formed at an acute angle with respect to the gaseous fluid supply passage 261 through which the gaseous fluid is supplied along the straight line centerline, with the same directional component as the gas flow direction along the gaseous fluid supply passage 261. As a result, the liquid carbon dioxide flowing through the branch passage smoothly flows into the first position X1 at the end of the gaseous fluid supply passage 261.

For example, in the branch passage (dry ice supply passage), liquid carbon dioxide is supplied from a high-pressure tank of 402 to 60 bar. The pressure of the liquid state carbon dioxide injected into the branch passage is also kept high. Accordingly, as soon as the liquid carbon dioxide supplied through the branch passage joins the gaseous fluid supply passage 261 at the first position X1, the pressure of the carbon dioxide in the high pressure state is lowered from the high pressure to the low pressure, Carbon dioxide in the solid state solidifies into dry ice.

Further, instead of supplying dry ice particles in a solid state through the branch passage, liquid carbon dioxide is supplied through the branch passage so that carbon dioxide in the liquid state reaches the low-pressure vapor phase supply passage 261, So that they are uniformly mixed while passing through the discharge passage together with the gas flow that has flowed through the gaseous fluid supply passage 261.

The cross section of the branch passage is formed to have a smaller cross section than the gaseous fluid supply passage 261 and the size of the dry ice particles solidified at the first position X1 can be adjusted by adjusting the cross sectional size of the branch passage. For example, the diameter of the dry ice particles may be in the range of 100 to 2000 mu m.

The discharge body discharge passage 263 is disposed in the form of a straight line continuous with the gaseous fluid supply passage 261. In the first position X1 communicating with the branch passage, the liquid state carbon dioxide supplied through the branch passage is solidified The dry ice particles are combined with the vapor phase fluid to form a jet body. The gaseous fluid supplied from the gaseous fluid supply passage 261 and the branch passage and the flow pressure of the carbon dioxide move toward the discharge port and are discharged.

At this time, the discharge region S3 through which the jet is discharged includes a second sectional area S31 having a section maintained constant along the flow direction, a sectional enlarged area S32 having a section gradually expanded along the flow direction, . Thereby, at the first position X1 of the second section constant region S31, the fine dry ice solid particles uniformly spread in the stagnant gas flow and pass through the discharge region S3. Therefore, the gaseous fluid and the fine dry ice solid particles are discharged in a uniformly mixed state to the jetting body discharged from the discharge port.

Particularly, the vapor-phase fluid having a faster flow velocity in the cross-sectional reduction area S2 passes through the cross-sectional enlarged region, and the gas expands to lower the temperature, so that the temperature of the discharged gasket can be lowered. Therefore, since the substrate 10 is cooled by the jetting body striking the surface of the substrate 10, the fine particles falling off the substrate 10 due to the thermo-phoresis effect during the cleaning of the substrate 10 (Foreign particle) floating around the substrate 10 and reattached to the substrate 10 can be suppressed.

As described above, the heterogeneous fluid spraying unit 240 for spraying the fluid with the dry ice can cleanly remove various sludges fixed on the surface of the substrate 10 subjected to the chemical mechanical polishing process in a shorter time, It is possible not only to shorten the cleaning process time but also to reduce the amount of chemical for removing the foreign matter adhering to the surface of the substrate 10.

On the other hand, in the embodiment of the present invention, carbon dioxide in the liquid state is solidified to supply dry ice solid particles. However, in some cases, the solidified dry ice solid particles may be supplied through the dry ice supply passage . In addition, it is also possible to form the slit-like discharge port having a long length to have the discharge port.

In addition, although the above-described embodiments of the present invention described above have been described by way of example in which the heterogeneous fluid injection portion for spraying the fluid with the dry ice includes the vapor fluid supply passage, the branch passage, and the discharge passage, It is possible to configure the chemical to be injected at a high speed by the same or similar structure as the disparate fluid ejecting part including the vapor fluid supply passage, the branch passage and the discharge passage.

In addition, even in the case of a heterogeneous fluid injection portion in which a gaseous fluid and a liquid fluid (or two gaseous fluids or two liquid fluids) are injected, it is possible to apply the same or similar injection structure to a heterogeneous fluid injection portion that injects fluid with dry ice Do. For example, the dissimilar fluid injecting unit that injects the gaseous fluid and the liquid-phase fluid has a cross-sectional reduction area that gradually increases in cross-section along the flow direction of the gas to increase the flow rate of the gas and a third area A gas supply passage (see 261 in Fig. 9), and a liquid supply passage (see 262 in Fig. 9) for joining the liquid to the gas supply passage at a first position close to the discharge port.

A megasonic generator (not shown) may be connected to the cleaning fluid spraying unit 210. The megasonic generator is connected to the cleaning fluid spraying unit 210 through a cleaning liquid or a chemical sprayed on the surface of the substrate 10 The surface of the substrate 10 can be vibrated so that foreign substances present on the surface of the substrate 10 can be effectively separated from the substrate 10. [

11, the rotating assembly 146 may be configured to oscillate the substrate 10 placed in the vertical cleaning position during the course of the preliminary cleaning.

Specifically, as the rotating assembly 146 swings at a predetermined angle to the movable assembly with respect to the movable assembly in a state where the substrate 10 is disposed at the vertical cleaning position, the substrate 10 gripped by the grip assembly 148, Can be oscillated.

Thus, by oscillating the substrate 10 while the cleaning fluid is sprayed on the surface of the substrate 10 and the preliminary cleaning is proceeding, it is possible to maximize the cleaning efficiency by the cleaning fluid and to reduce the use amount of the cleaning fluid Effect can be obtained.

In some cases, the cleaning fluid injection portion may be oscillated instead of the substrate, but in order to oscillate the cleaning fluid injection portion, a separate rotating device for rotating the cleaning fluid injection portion must be additionally provided. However, in the structure in which the substrate 10 is oscillated, since the rotating assembly 146 already provided for the reverse rotation of the substrate 10 can be used, there is no need to change or add additional equipment, And an advantageous effect of simplifying the process can be obtained.

The cleaning fluid injecting section 210 may be formed in various structures capable of injecting the cleaning fluid into the substrate 10 disposed at the vertical cleaning position.

12, the cleaning fluid jetting unit 210 includes a plurality of jetting nozzles 211 for jetting a cleaning fluid, and a plurality of jetting nozzles 211 are arranged at a predetermined interval Are spaced apart. As described above, by allowing the cleaning fluid to be injected at a wide ejection area (preferably, the ejection area corresponding to the diameter of the substrate) through the plurality of the ejection nozzles 211, an advantageous effect of increasing the preliminary cleaning efficiency by the cleaning fluid can be obtained Can be obtained.

13, the cleaning fluid jetting unit 210 includes a plurality of jetting nozzles 212 for jetting a cleaning fluid, and a plurality of jetting nozzles 212 are arranged in a circumferential direction of the substrate 10 And are arranged so as to form an approximate arc. As described above, the cleaning fluid ejected through the plurality of ejection nozzles 212 is ejected onto the substrate at a uniform ejecting distance and ejection pressure, thereby achieving an advantageous effect of increasing the pre-cleaning uniformity by the cleaning fluid. Alternatively, it is also possible that the cleaning fluid jetting portion is provided with a structure having a long slit-shaped jetting port.

14, the grip assembly 148 may include a substrate rotating portion 149 that rotates the substrate 10 on the grip assembly 148 while the pre-cleaning process is in progress.

The substrate rotating part 149 may include a plurality of rotating bodies that are rotatably mounted on the grip assembly 148 and contact the edges of the substrate 10. When each rotating body rotates, Can be rotated relative to the picture assembly 148 while being placed in the vertical cleaning position.

In this way, while the substrate 10 is placed in the vertical cleaning position, the substrate 10 is rotated in the circumferential direction while the preliminary cleaning (for example, cleaning fluid injection or brush contact) proceeds, It is possible to obtain an advantageous effect of increasing the preliminary cleaning efficiency and uniformity.

15, the cleaning unit 200 may include a cleaning brush 280 that is in rotational contact with the surface of the substrate, and the pre-cleaning of the substrate 10 disposed in the vertical cleaning position may be performed by a cleaning brush 280 ). ≪ / RTI >

As the cleaning brush 280, a brush made of an ordinary material (for example, polyvinyl alcohol of a porous material) capable of being brought into frictional contact with the surface of the substrate 10 may be used. In addition, a plurality of cleaning protrusions for improving the contact property of the brush can be formed on the surface of the cleaning brush 280. Of course, it is also possible to use a brush having no cleaning protrusion in some cases.

While the cleaning brush 280 is in contact with the substrate 10 so as to enhance the cleaning effect of the cleaning brush 280 and the substrate 10 due to frictional contact while the cleaning brush 280 is being cleaned, A cleaning liquid, steam, or the like may be supplied to the contact portion between the cleaning brush 280 and the substrate 10 through the cleaning fluid injecting unit 210. [

At this time, the cleaning brush 280 can be brought into rotational contact with the surface of the substrate 10 in a horizontally arranged state (horizontal state on the ground). The cleaning brush 280 may be rotated and brought into contact with the surface of the substrate 10 in a state where the cleaning brush 280 is inclined at a predetermined angle as shown in Fig. 16, thereby improving the cleaning efficiency by the cleaning brush 280 It is also possible.

Referring again to Figure 2, a cleaning part 300 is provided on an adjacent side of the polishing part 100 and is provided for cleaning foreign objects remaining on the surface of the substrate 10 pre-cleaned in the inversion area.

For reference, the cleaning of the substrate 10 in the cleaning part 300 in the present invention refers to the cleaning of the surface of the substrate 10 (particularly, the polishing surface of the substrate and the non-polished surface of the substrate) ) As much as possible. Particularly, in the cleaning of the substrate 10, a relatively small foreign matter (for example, foreign matter having a size of 40 to 100 nm) among the foreign matters existing on the surface of the substrate 10 and a foreign substance adhered with a relatively strong adhesive force .

In addition, the substrate 10 cleaned in the cleaning part 300 is configured to perform the next predetermined process without cleaning. Here, performing the next process without the substrate 10 in the cleaned state means that the cleaning process in the cleaning part 300 is finally completed, and that all the cleaning process with respect to the substrate 10 is completed, For the substrate 10 on which the process has been completed, a subsequent process (e.g., a deposition process) may proceed without an additional cleaning process.

The cleaning part 300 may be provided with a structure capable of performing various stages of cleaning and drying processes and the present invention is not limited or limited by the structure and layout of the cleaning station constituting the cleaning part 300.

Preferably, the cleaning part 300 physically contacts the surface of the substrate 10 and performs cleaning to effectively perform cleaning to remove organic matter and other foreign matter remaining on the surface of the substrate 10 Contact type cleaning unit 400 and a non-contact type cleaning unit 500 that is physically in contact with the surface of the substrate 10 and performs cleaning. In some cases, the cleaning part may include only one of the contact type cleaning unit and the non-contact type cleaning unit.

The contact type cleaning unit 400 may be provided in various structures physically contacting the surface of the substrate 10 and capable of performing cleaning. Hereinafter, an example in which the contact type cleaning unit 400 includes the first contact type cleaning unit 402 and the second contact type cleaning unit 404 will be described.

In one example, the first contact type cleaning unit 402 and the second contact type cleaning unit 404 may be configured to include a cleaning brush that rotates and contacts with the surface of the substrate 10.

In one example, the pre-cleaned substrate 10 can be cleaned by a pair of cleaning brushes that rotate in a rotating state by a normal spindle (not shown). In some cases, the substrate may be cleaned by the cleaning brush in a fixed state without rotating. Alternatively, it is possible for only one cleaning brush to perform cleaning for only one plate surface (e.g., polishing surface) of the substrate.

While the cleaning brush is in contact with the substrate 10, the cleaning brush is brought into contact with the substrate 10 while the cleaning brush is in contact with the substrate 10 so that the cleaning effect of the cleaning brush by the frictional contact between the cleaning brush and the substrate 10 can be enhanced, And a chemical feeder for feeding the chemical to the site.

The chemical supply unit may be configured to spray the chemical into at least one of the substrate 10 and the cleaning brush, and the type and characteristics of the chemical sprayed onto the cleaning brush may be variously changed according to required conditions and design specifications. Preferably, at least one of SC1 (Standard Clean-1, APM) and hydrofluoric acid (HF) may be used as the chemical to be sprayed onto the cleaning brush so as to enhance the removal efficiency of fine organic matter. In some cases, pure water may be sprayed instead of the chemical at the contact area between the cleaning brush and the substrate, or both the chemical and pure water may be sprayed together.

On the other hand, the substrate that has been cleaned in the first contact type cleaning unit (for example, cleaning brush) can be transferred to the second contact type cleaning unit by a normal transfer arm. The transfer arm is provided to be capable of reciprocating the first contact type cleaning unit and the second contact type cleaning unit so that the substrate 10 subjected to cleaning in the first contact type cleaning unit can be transferred to the second contact type cleaning unit . For reference, while the different substrates 10 are simultaneously cleaned in the first contact type cleaning unit and the second contact type cleaning unit, the transfer arm is provided between the first contact type cleaning unit and the second contact type cleaning unit It is possible to temporarily stand by on the escape region.

Further, the substrate 10 cleaned in the second contact type cleaning unit can be transferred to the non-contact type cleaning unit 500 by a normal transfer arm. The transfer arm is provided to be capable of reciprocating the second contact type cleaning unit and the non-contact cleaning unit 500 so that the substrate 10 which has been cleaned in the second contact type cleaning unit can be transferred to the non-contact cleaning unit 500 . For reference, while the different substrates 10 are simultaneously cleaned in the second contact type cleaning unit and the non-contact type cleaning unit, the transfer arm is temporarily placed on the escape area provided between the second contact type cleaning unit and the non- .

The non-contact type cleaning unit 500 may be provided in various structures that are physically non-contact with the surface of the substrate 10 and can perform cleaning. Hereinafter, an example in which the non-contact type cleaning unit 500 includes the first non-contact type cleaning unit 502 and the second non-contact type cleaning unit 504 will be described. In some cases, it is also possible that the non-contact type cleaning unit is composed of only one cleaning unit.

Preferably, a blocking unit may be provided to block the cleaning processing space of the non-contact type cleaning unit 500 from other spaces while the cleaning is performed in the non-contact type cleaning unit 500. Here, the cleaning processing space of the non-contact type cleaning unit 500 can be understood as a space where cleaning is performed by the non-contact type cleaning unit 500, and the cleaning processing space of the non-contact type cleaning unit 500 can be independently As shown in FIG.

The non-contact cleaning unit 500 can be configured to perform cleaning in various ways depending on the required conditions and design specifications.

For example, the noncontact type cleaning unit 500 includes a chemical spraying portion for spraying at least one kind of chemical onto the surface of the substrate 10, a steam spraying portion for spraying steam onto the surface of the substrate 10, A dispenser for dispensing a cleaning liquid on a surface of the substrate 10; a disparate fluid dispensing unit for dispensing different heterogeneity fluids on the surface of the substrate 10; And an isopropyl alcohol jetting portion for jetting IPA.

Meanwhile, FIG. 17 is a block diagram for explaining a control method of the chemical mechanical polishing apparatus according to the present invention. In addition, the same or equivalent portions as those in the above-described configuration are denoted by the same or equivalent reference numerals, and a detailed description thereof will be omitted.

Referring to FIG. 17, in accordance with an embodiment of the present invention, a method of controlling a chemical mechanical polishing apparatus includes a polishing step (S10) of polishing a substrate (10) , And a pre-cleaning step (S30) for pre-cleaning the substrate placed in the vertical cleaning position.

Step 1:

First, the polishing layer of the substrate 10 is polished by contacting the polishing pad 110 (S10)

The substrate 10 can be pressed to the polishing pad 110 by the carrier head 120 and the slurry can be supplied to the upper surface of the polishing pad 110 in the polishing step S10.

Step 2:

Next, the substrate 10 on which the polishing process has been completed is placed at the vertical cleaning position (S20)

Here, the substrate 10 is disposed at the vertical cleaning position, which means that the substrate 10 is arranged perpendicular to the paper surface.

For example, in the substrate placement step S20, the substrate 10 on which the polishing process has been completed may be placed in the vertical cleaning position by the reversing unit 140. [

Preferably, in the substrate placement step (S20), the substrate is placed in the vertical cleaning position in the middle, with the polishing surface of the substrate inverted from the lower direction to the upper direction.

As described above, in the substrate placement step S20, the substrate 10 can be placed in the vertical cleaning position by stopping the rotation of the substrate 10 in the middle of the process of reversing the substrate 10. [ Of course, it is also possible to arrange the substrate vertically through a separate rotating process (a rotating process using rotating equipment other than the reversing unit 140), but it is also possible to arrange the substrate during the reversing process of the substrate, By being disposed at the vertical cleaning position, the process of vertically arranging the substrate can be simplified, and an advantageous effect of reducing the overall process can be obtained.

Step 3:

Next, the substrate placed in the vertical cleaning position is pre-cleaned (S30)

Herein, the preliminary cleaning of the substrate 10 is a step of primarily cleaning the foreign substances present on the surface of the substrate 10 (particularly, the polishing surface of the substrate) before cleaning is performed in the cleaning part 300 .

In the preliminary cleaning step S30, the substrate 10 is preliminarily cleaned in a state where the substrate 10 is placed at the vertical cleaning position, so that the cleaning fluid such as the cleaning liquid or the chemical used in the preliminary cleaning and the cleaning fluid It is possible to obtain an advantageous effect that the foreign substances or the like falling downward without being remained or reattached to the surface of the substrate 10 and being naturally separated from the substrate.

The preliminary cleaning in the preliminary cleaning step (S30) can be carried out in various cleaning methods according to the required conditions and design specifications.

For example, the preliminary cleaning step S30 may include a cleaning fluid injection step of ejecting a cleaning fluid to the surface of the substrate, and the preliminary cleaning may be performed by spraying a cleaning fluid on the surface of the substrate. Herein, the cleaning fluid may be understood as a concept including all of the substances to be sprayed which are sprayed on the surface of the substrate, such as a cleaning liquid, steam, heterogeneous fluid, etc., and can perform preliminary cleaning. The invention is not limited or limited.

Further, the preliminary cleaning step (S30) may include a brush cleaning step of brush cleaning the surface of the substrate, and the cleaning brush may be brought into rolling contact with the surface of the substrate to perform preliminary cleaning.

Further, in the preliminary cleaning step S30, it is possible to preliminarily clean at least one of a polishing surface and a non-polishing surface of the substrate.

Preferably, the oscillation step may include a step of oscillating the substrate placed in the vertical cleaning position to the left and right while the pre-cleaning is proceeding. By thus oscillating the substrate while the cleaning fluid is sprayed on the surface of the substrate and the preliminary cleaning progresses, it is possible to maximize the cleaning efficiency with the cleaning fluid and obtain the advantageous effect of further lowering the amount of the cleaning fluid used. (See Fig. 11)

The method may further include a rotating step of rotating the substrate placed in the vertical cleaning position along the circumferential direction of the substrate while the preliminary cleaning is proceeding. In this way, while the substrate 10 is placed in the vertical cleaning position, the substrate 10 is rotated in the circumferential direction while the preliminary cleaning (for example, cleaning fluid injection or brush contact) proceeds, (See Fig. 14). [0064] As shown in Fig. 14,

Step 4:

Next, the preliminarily cleaned substrate is cleaned. (S40)

Cleaning of the substrate 10 in the cleaning step S40 means that foreign substances remaining on the surface of the substrate 10 after the preliminary cleaning has progressed (particularly, the polishing surface of the substrate and the non-polished surface of the substrate can also be cleaned) It can be understood as a process for washing as much as possible.

The cleaning step S40 may be provided with a structure capable of performing various cleaning and drying processes, and the present invention is not limited or limited by the cleaning method and the type of the cleaning step S40.

Preferably, in the cleaning step S40, the substrate 10 is physically contacted to the surface of the substrate 10 so as to effectively perform cleaning for removing organic matter and other foreign matter remaining on the surface of the substrate 10, Contact cleaning step and a non-contact cleaning step that physically touches the surface of the substrate 10 and performs cleaning. In some cases, the cleaning step may include only one of the contact cleaning step and the non-contact cleaning step.

Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims. It will be understood that the present invention can be changed.

10: substrate 100: polishing part
110: polishing plate 120: carrier head
140: inverting unit 142: driving assembly
144: movable assembly 146: rotating assembly
148: Grip assembly 149:
200: cleaning unit 210: cleaning fluid jetting unit
220: cleaning liquid spraying part 230: steam spraying part
240 to 260: heterogeneous fluid jetting unit 280: cleaning brush
300: Cleaning parts

Claims (25)

As a chemical mechanical polishing apparatus,
There is provided a common mounting area in which a chemical mechanical polishing (CMP) process is performed on the substrate, a process in which the substrate on which the polishing process is completed is unloaded, or a process in which another substrate on which the next polishing process is performed is loaded is commonly used, Wherein the common mounting area includes a polishing part located in a predetermined circulation path of the carrier head moving with the substrate mounted thereon;
A rotation assembly connected to the grip assembly and configured to rotate the grip assembly; and a rotation assembly coupled to the rotation assembly, the rotation assembly being coupled to the inversion area located outside the circulation path, The substrate having been polished in a state of being mounted on the carrier head is received by the grip assembly in the common docking area and moved to the inversion area and is then moved to a vertical cleaning position An inverting unit disposed in the inverting unit;
A cleaning unit located in the polishing part and pre-cleaning the substrate disposed in the vertical cleaning position;
A cleaning part for transferring the preliminarily cleaned substrate by the cleaning unit to a subsequent cleaning of the substrate;
Wherein the chemical mechanical polishing apparatus comprises a chemical mechanical polishing apparatus.
The method according to claim 1,
Wherein the inverting unit places the substrate at the vertical cleaning position in the middle of the reverse rotation so that the polishing surface of the substrate is directed from the lower direction to the upper direction.
The method according to claim 1,
Wherein the rotating assembly oscillates left and right the substrate disposed in the vertical cleaning position while the pre-cleaning is proceeding.
The method according to claim 1,
And a substrate rotating portion for rotating the substrate on the grip assembly during the pre-cleaning process.
5. The method according to any one of claims 1 to 4,
Wherein the cleaning unit comprises a cleaning fluid jetting portion for jetting a cleaning fluid onto a surface of the substrate.
6. The method of claim 5,
Wherein the cleaning fluid injecting portion includes a cleaning fluid injecting portion for injecting a cleaning fluid onto the surface of the substrate.
6. The method of claim 5,
Wherein the cleaning fluid injector comprises a steam injector for injecting steam onto the surface of the substrate.
6. The method of claim 5,
Wherein the cleaning fluid ejection portion includes a heterogeneous fluid ejection portion for ejecting different heterogeneity fluids onto the surface of the substrate.
9. The method of claim 8,
The heterogeneous fluid injector may include:
A first fluid supply unit for supplying a first fluid;
A second fluid supply unit for supplying a second fluid different from the first fluid; Including,
Wherein the first fluid and the second fluid are injected onto the surface of the substrate in a mixed or separated state.
9. The method of claim 8,
The heterogeneous fluid injector may include:
A dry ice supply unit for supplying dry ice particles;
A fluid ejecting unit for ejecting fluid onto a surface of the substrate; Including,
Wherein the dry ice particles and the fluid are sprayed onto the surface of the substrate in a mixed state with each other.
5. The method according to any one of claims 1 to 4,
Wherein the cleaning unit comprises a cleaning brush in rotational contact with the surface of the substrate.
5. The method according to any one of claims 1 to 4,
Wherein the cleaning unit pre-cleans at least one of a polishing surface and a non-polishing surface of the substrate.
5. The method according to any one of claims 1 to 4,
The cleaning part comprises:
At least one of a contact type cleaning unit physically contacting the surface of the substrate and performing the subsequent cleaning and a contactless cleaning unit physically contacting the surface of the substrate and performing the subsequent cleaning Chemical mechanical polishing apparatus.
A common mounting area in which a substrate on which a polishing process has been completed is unloaded or a process in which another substrate on which a next polishing process is performed is commonly used is provided in the polishing part, A method of controlling a chemical mechanical polishing apparatus located in a predetermined circulation path of a moving carrier head,
A polishing step of polishing the substrate on the polishing part;
A substrate disposing step of receiving the substrate from which the polishing process has been completed in the common dock area, moving the substrate to an inversion area located outside the circulation path, and disposing the substrate in a vertical cleaning position vertically disposed on the ground;
A pre-cleaning step of pre-cleaning the substrate disposed in the inverted region to the vertical cleaning position;
A subsequent cleaning step of transferring the pre-cleaned substrate and subsequent cleaning of the substrate in the cleaning part;
Wherein the chemical mechanical polishing apparatus comprises:
15. The method of claim 14,
Wherein the substrate is placed at the vertical cleaning position in the middle of the substrate placement step where the polishing surface of the substrate is inverted from the lower direction to the upper direction.
15. The method of claim 14,
And an oscillation step of oscillating the substrate placed in the vertical cleaning position to the left and right while the preliminary cleaning is proceeding.
15. The method of claim 14,
And a rotating step of rotating the substrate disposed at the vertical cleaning position along the circumferential direction of the substrate while the preliminary cleaning is proceeding.
18. The method according to any one of claims 14 to 17,
Wherein the preliminary cleaning step includes at least one of a cleaning fluid jetting step of jetting a cleaning fluid onto the surface of the substrate and a brush cleaning step of cleaning the surface of the substrate by brush cleaning, Way.
18. The method according to any one of claims 14 to 17,
Wherein the pre-cleaning step comprises pre-cleaning at least one of a polishing surface and a non-polishing surface of the substrate.
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