CN206500996U - Chemical mechanical polishing device - Google Patents
Chemical mechanical polishing device Download PDFInfo
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- CN206500996U CN206500996U CN201621404350.5U CN201621404350U CN206500996U CN 206500996 U CN206500996 U CN 206500996U CN 201621404350 U CN201621404350 U CN 201621404350U CN 206500996 U CN206500996 U CN 206500996U
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- chemical mechanical
- mechanical polishing
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- 239000000126 substance Substances 0.000 title claims abstract description 67
- 238000005498 polishing Methods 0.000 title claims abstract description 38
- 238000004140 cleaning Methods 0.000 claims abstract description 443
- 239000000758 substrate Substances 0.000 claims abstract description 328
- 238000002360 preparation method Methods 0.000 claims abstract description 63
- 238000000227 grinding Methods 0.000 claims abstract description 43
- 239000012530 fluid Substances 0.000 claims description 208
- 238000002347 injection Methods 0.000 claims description 94
- 239000007924 injection Substances 0.000 claims description 94
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 63
- 235000011089 carbon dioxide Nutrition 0.000 claims description 35
- 229960004424 carbon dioxide Drugs 0.000 claims description 25
- 239000007921 spray Substances 0.000 claims description 19
- 238000012546 transfer Methods 0.000 claims description 18
- 239000002245 particle Substances 0.000 claims description 14
- 238000003701 mechanical milling Methods 0.000 claims description 9
- 238000002156 mixing Methods 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 50
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The utility model is related to a kind of chemical mechanical polishing device, and chemical mechanical polishing device includes：Grind section, it carries out cmp (CMP) technique to substrate；Roll-over unit, its substrate for complete grinding technics is vertically arranged at vertical cleaning position；Preparation cleaning unit, it carries out preparing cleaning (pre cleaning) to the substrate for being configured at vertical cleaning position, so that available favourable effect is, effectively removes the foreign matter for remaining in substrate, and improve the cleaning efficiency of substrate.
Description
Technical field
The utility model is related to a kind of chemical mechanical polishing device, more specifically, is related to a kind of cmp dress
Put, the chemical mechanical polishing device can be removed in the state of by substrate with vertical form configuration and residue in the different of substrate
Thing.
Background technology
Semiconductor element is fabricated by by fine circuit line highly dense, therefore, and wafer surface must be carried out accordingly
Precise finiss.For the grinding more become more meticulous to wafer, mechanical lapping and the parallel chemical machine of chemical grinding are carried out
Tool grinding technics (CMP).
Cmp (CMP) technique be it is a kind of in order to realize global planarization with by the contact for forming circuit
(contact)/wiring UF membrane and highly integrated element and improvement of wafer surface roughness for producing etc. and to crystalline substance
The surface of member carries out the technique of fine gtinding processing, and the global planarization is to remove in semiconductor element manufacturing process repeatedly
Caused by the bumps for being sheltered the wafer surface generated while (masking), etching (etching) and wiring technique etc.
Unit (cell) region and the interregional difference in height of peripheral circuits.
The CMP is completed by following form：In the state of the technical face and grinding pad of wafer are facing, to institute
Wafer pressurization is stated, while chemical grinding and the mechanical lapping of technical face are carried out, and the scavenger by being carried out in following form
Skill：The wafer for completing grinding technics is grasped by carrier head, so as to be cleaned to the foreign matter for being attached to technical face.
In other words, as shown in figure 1, normally, the chemical mechanical milling tech of wafer is completed by following form：If
Wafer is supplied in chemical mechanical polishing device X1 by load units 20, then by wafer W be close to carrier head S (S1, S2, S1',
S2' in the state of), while 66-68 is moved along defined path P o, multiple grinding flat plate P1, P2, P1',
Chemical mechanical milling tech is carried out on P2'.The wafer W of progress chemical mechanical milling tech is transferred to unloading by carrier head S
The rack 10 of unit, and the cleaning unit X2 for carrying out next cleaning is transferred to, so as to carry out in multiple cleaning moulds
70 pairs of block (module) is attached to the technique that wafer W foreign matter is cleaned.
In addition, miniaturization and Highgrade integration with semiconductor, about wafer cleaning efficiency importance also
Little by little strengthen.Particularly, if after the cleaning that cleaning module completes wafer, still having different in the surface remaining of wafer
Thing, then yield is low, and stability and reliability are low, therefore should farthest remove foreign matter in cleaning module.
Therefore, proposing following scheme：Before the existing wafer by completion grinding technics is transferred to cleaning module, first
After once being cleaned to wafer and removing foreign matter, cleaned again in cleaning module, cleaning efficiency can be improved with this.
But, in existing situation, ground is distinguished with cleaning module, the preparation being additionally provided with for prepare cleaning is clear
Space is washed, it is thus unfavorable in the presence of the layout (layout) to equipment, and the transfer of wafer and cleaning treatment technique are become
It is complicated and the problem of increase scavenging period, thus the problem of there is expense increase and low yield.Especially, due to will be complete
The wafer of unloading position is offloaded to after into grinding technics to be transferred to after other preparation cleaning space and carrying out prepares cleaning, must
Must undergo needs to be transferred to the complicated transfer process of cleaning module again, therefore there is the overall handling process effect of substrate
The problem of rate is low.
Thus, it is used to that the cleaning efficiency and yield of chemical mechanical milling tech can be improved recently and reduces each of expense
Plant research to carry out, but still suffer from deficiency, it is therefore desirable to the exploitation to this.
Utility model content
The purpose of this utility model is that the chemical mechanical polishing device can there is provided a kind of chemical mechanical polishing device
Cleaning efficiency is improved, and yield can be improved.
Especially, the purpose of this utility model is, in the state of vertically placement substrate, can once remove and remain in
The foreign matter of substrate.
In addition, the purpose of this utility model is, even if not changing or without the layout of existing equipment, or cause work
Skill efficiency is not reduced, also can be before cleaning is carried out so that the foreign matter for being present in substrate is minimized.
According to the preferred embodiment of the present utility model for reaching above-mentioned the purpose of this utility model, chemical machinery is ground
Mill apparatus includes：Grind section, it carries out cmp (CMP) technique to substrate；Roll-over unit, it to complete grinding work
The substrate of skill is vertically arranged at vertical cleaning position；Roll-over unit may include：Movable-component, it is in grind section with can be with
For unload the unloading area of carried base board close to and the form that separates set；Rotary components, it is rotated so that (turning) may be reversed
Form be connected to movable-component；Clamp assembly, it is connected to rotary components and clamping substrate；Preparation cleaning unit, its is right
The substrate for being configured at vertical cleaning position carries out preparing cleaning (pre-cleaning).
It is intended that when being cleaned to substrate, in the state of vertically placement substrate, to remaining in substrate
Foreign matter carry out once preparation cleaning after, cleaning part carry out substrate this cleaning, accordingly, effectively remove remain in
The foreign matter of substrate, and improve the cleaning efficiency of substrate.
Especially, in the state of substrate to be configured to vertical cleaning position, the preparation cleaning of substrate is performed, accordingly, can be obtained
To favourable effect be, carry out prepare cleaning when the used cleaning fluid as cleaning fluid or chemicals with
And the foreign matter etc. separated from substrate will not residue in the surface of substrate or adhere to again, but drop downwards, and naturally from
Substrate is separated, so as to improve the cleaning efficiency of substrate.
Especially, substrate abradant surface (polishing surface) in the form of from bottom direction towards upper direction
In the way being reversed, substrate is configured at vertical cleaning position, accordingly, and available favourable effect is, in process efficiency not
In the case of reduction, the foreign matter for remaining in substrate is removed.
In other words, although can also be hung down when carrying out and preparing cleaning by using the rotating technics of other rotating device
Straight ground placement substrate, but in the form unrelated with preparation cleaning in the upset technique of the substrate necessarily carried out, substrate configuration
In vertical cleaning position, so that available favourable effect is, simplify the process for make it that substrate is vertically configured, and subtract
Few overall technique.
Also, complete the shape that substrate while the substrate of grinding technics is reversed by roll-over unit is supported in roll-over unit
Under state, progress prepares cleaning, and available favourable effect is accordingly, it is not required that additionally be provided for carrying out preparing cleaning
Other space, therefore not the layout (layout) to existing equipment is changed or added, or do not change process sequence, and
It can keep almost unchanged.
In other words, the base plate transfer of grinding technics will be completed to cleaning part and before carrying out this cleaning, though
So also can be by base plate transfer to other cleaning area, and after prepare cleaning, cleaning part is transferred to again, but herein
In the case of, it is transferred to due to having to pass through substrate from upset region after other cleaning area, cleaning part is transferred to again
Complicated transfer process, therefore the problem of there is the overall handling process efficiency of reduction substrate, due in order to additionally set
Other cleaning area and must change or add the layout of existing equipment, therefore there is reduction space availability ratio and increase and setting
The problem of expense required in terms of standby change.But, the available favourable effect of the utility model is, will complete to grind
The substrate of technique is transferred to cleaning part process sequence after being overturn in upset region keeps constant, and for overturning
Once preparation is carried out in the upset region of substrate to the foreign matter for remaining in substrate to clean, so as to not change or set without existing
Standby layout, in the state of process efficiency is not also reduced, so that remaining in the foreign matter of substrate most before this cleaning is carried out
Fewization.
In addition, available favourable effect is, it is pre- by what is performed before this cleaning in upset region
Standby technique, can farthest sweep off the foreign matter for remaining in substrate, thus can improve and be imitated by the cleaning of this cleaning
Really, and cause cleaning efficiency improve.
Also, the transfer path of the carrier head of substrate is transferred along the circulating path set on the region of grind section
In the unloading area of the substrate of upper formation, substrate is transferred to upset region, can obtain accordingly after unit reception is reversed
Favourable effect be so that the transfer path of carrier head is minimized.It is further preferable that can be in unloading area to for holding
Other substrates of row grinding technics are loaded.
In addition, during rotary components perform preparation cleaning so that be configured at substrate of vertical cleaning position or so vibration,
Available favourable effect is accordingly so that maximized by the cleaning efficiency for cleaning fluid, and more reduction cleaning
The usage amount of fluid.Also, the rotary components configured for the overturning rotation of substrate can be used substrate is vibrated,
Therefore, available favourable effect is, it is not necessary to change or adding set, and structure and technique are simplified.
In addition, including substrate rotating part, during carrying out preparing cleaning, it causes the substrate on the clamp assembly
Rotation, accordingly, available favourable effect is, during carrying out preparing cleaning, substrate circumferentially rotates, so that
Improve the preparation cleaning efficiency and the uniformity of substrate.
Also, preparation cleaning unit can using clean in fluid injection portion and cleaning brush at least any one carry out, and
And preparation cleaning species is selected according to the characteristic or deposition characteristics of substrate, and carry out by optimal conditions preparing cleaning, institute
State cleaning fluid injection portion include in cleaning fluid ejection section, steam generating part, xenogenesis fluid injection portion at least any one, it is described
Cleaning fluid ejection section sprays cleaning fluid to the surface of substrate, and the steam generating part sprays steam to the surface of substrate,
The xenogenesis fluid injection portion is by the surface of xenogenesis fluid injection to substrate, and the cleaning brush rotating contact is in the surface of substrate.
According to other fields of the present utility model, chemical mechanical polishing device can be grasped in the form of comprising the following steps
Make：Grinding steps, are ground to substrate；Substrate configuration step so that the substrate for completing grinding technics is configured at vertical cleaning
Position；Preparation cleaning step, carries out preparing cleaning (pre-cleaning) to the substrate for being configured at vertical cleaning position.
As described above, in the state of substrate to be configured to vertical cleaning position, the preparation cleaning of substrate is performed, accordingly,
Available favourable effect is, the used cleaning stream as cleaning fluid or chemicals when carrying out preparing cleaning
Body and the foreign matter etc. separated from substrate will not residue in the surface of substrate or adhere to again, but drop downwards, and naturally
Ground is separated from substrate, so that the cleaning efficiency of substrate is improved.
Especially, in substrate configuration step, substrate abradant surface (polishing surface) with from bottom direction court
In the way being reversed to the form of upper direction, substrate is configured at vertical cleaning position, accordingly, and available favourable effect exists
In, the simplified process that substrate is vertically configured, and reduce overall technique.
Preferably, it may include oscillation step, during carrying out preparing cleaning so that be configured at the substrate of vertical cleaning position
Left and right vibrates.As described above, in cleaning fluid injection to the surface of substrate and during carrying out preparing cleaning so that substrate shakes
Swing, accordingly, available favourable effect is so that the efficiency cleaned by cleaning fluid is maximized, and more
The usage amount of reduction cleaning fluid.
In addition, it may include spin step, during carrying out preparing cleaning so that be configured at the substrate edge of vertical cleaning position
The circumferencial direction rotation of substrate.As described above, in the state of substrate is configured at vertical cleaning position, carrying out preparing cleaning
Period, substrate circumferentially rotates, so that available favourable effect is, improve substrate preparation cleaning efficiency and
The uniformity
As reference, " the preparation cleaning " of so-called substrate refers to the substrate for completing grinding in the utility model
The cleaning initially carried out, and can be regarded as once cleaning to be present in the different of the surface of substrate before being cleaned
The cleaning of thing.
In addition, the so-called cleaning carried out by cleaning part is it is understood that for being prepared in the utility model
The last cleaning that the foreign matter on the surface after cleaning to residuing in substrate is cleaned.
As described above, according to the utility model, cleaning efficiency can be improved, and can simplify cleaning.
Especially, according to the utility model, in the state of substrate to be configured to vertical cleaning position, the pre- of substrate is performed
Standby cleaning, accordingly, available favourable effect is, used such as cleaning fluid or chemicals when carrying out preparing cleaning
The same cleaning fluid and the foreign matter from substrate separation etc. will not residue in the surface of substrate or adhere to again, but fall downwards
Fall, and separated naturally from substrate, so as to improve the cleaning efficiency of substrate.
In addition, according to the utility model, being turned in the abradant surface of substrate in the form of from bottom direction towards upper direction
In the way turned, substrate is configured at vertical cleaning position, in other words, in the form unrelated with preparation cleaning in the base necessarily carried out
In the upset technique of plate, substrate is configured at vertical cleaning position, accordingly, and available favourable effect is, in process efficiency
In the case of not reducing, also substrate is caused promptly to be configured at vertical cleaning position.
Also, according to the utility model, the layout to existing equipment is not changed or added, and is overturn using substrate is caused
Roll-over unit come to substrate carry out prepare cleaning, accordingly, available favourable effect is, is not dropped causing process efficiency
In the case of low, before (main) cleaning is led so that the foreign matter for remaining in substrate is minimized.
In other words, the base plate transfer of grinding technics will be completed to cleaning part and before carrying out this cleaning, though
So also can be by base plate transfer to other cleaning area, and prepare after cleaning, cleaning part is transferred to again, but in this feelings
Under condition, it is transferred to due to having to pass through substrate from upset region after other cleaning area, cleaning part is transferred to again
Complicated transfer process, therefore the problem of there is the overall handling process efficiency of reduction substrate, due to setting another in order to extra
Outer cleaning area and must change or add the layout of existing equipment, therefore there is reduction space availability ratio and increase in equipment
The problem of expense required in terms of change.But, the available favourable effect of the utility model is, will complete to grind work
The substrate of skill is transferred to cleaning part process sequence after being overturn in upset region keeps constant, and for overturning base
Once preparation is carried out in the upset region of plate to the foreign matter for remaining in substrate to clean, so as to not change or without existing equipment
Layout, in the state of process efficiency is not also reduced, carry out this cleaning before cause remain in substrate foreign matter it is minimum
Change.
In addition, being according to the available favourable effect of the utility model, pass through what is performed before this cleaning
Preliminary process, can farthest sweep off the foreign matter for remaining in substrate, thus can improve the cleaning by this cleaning
Effect, and cleaning efficiency is improved.
In addition, being according to the available favourable effect of the utility model, it can reduce and be produced due to base-plate cleaning
Expense, and process efficiency and yield can be improved.
In addition, be according to the available favourable effect of the utility model, due to can be according to the species and characteristic of substrate
Select a variety of prepared cleaning ways and be applicable, therefore can effectively remove the foreign matter on the surface for being bonded to substrate, and carry
High cleaning efficiency.
In addition, being according to the available favourable effect of the utility model, the foreign matter of substrate is remained in due to may be such that
Minimize, therefore may be such that the fraction defective of substrate is minimized, and improve stability and reliability.
Brief description of the drawings
Fig. 1 is the figure for the composition for showing existing chemical-mechanical grinding device,
Fig. 2 is to show the figure according to chemical mechanical polishing device of the present utility model,
Fig. 3 and Fig. 4 are the figures for illustrating Fig. 2 roll-over unit,
Fig. 5 is Fig. 2 preparation cleaning unit, shows the figure of cleaning fluid ejection section,
Fig. 6 is Fig. 2 preparation cleaning unit, shows the figure of steam generating part,
Fig. 7 to Figure 10 is Fig. 2 preparation cleaning unit, shows the figure in xenogenesis fluid injection portion,
Figure 11 be for illustrating by Fig. 3 roll-over unit so that the figure for the process that substrate vibrates,
Figure 12 and Figure 13 are Fig. 2 preparation cleaning units, show to clean the figure of the variation in fluid injection portion,
Figure 14 is the figure for illustrating the substrate rotating part for being arranged at roll-over unit,
Figure 15 and Figure 16 are Fig. 2 preparation cleaning units, show the figure of cleaning brush,
Figure 17 is the block diagram for illustrating the operating method according to chemical mechanical polishing device of the present utility model.
Embodiment
Hereinafter, preferred embodiment of the present utility model is described in detail referring to the drawings, but the utility model is not
It is limited by example or limits.As reference, identical label substantially refers to identical key element in the utility model, and
Under the rule, content described in other accompanying drawings can be quoted to illustrate, and can omit self-evident for practitioner
Interior perhaps recurrent content.
Reference picture 2, includes according to chemical mechanical polishing device 10 of the present utility model：Grind section 100, it is to substrate 10
Carry out cmp (CMP) technique；Roll-over unit 140, the substrate 10 for completing grinding technics is configured at vertical cleaning by it
Position；Preparation cleaning unit 200, it carries out preparing cleaning (pre- to the substrate 10 for being configured at vertical cleaning position
cleaning)。
Grind section 100 is formed as that the various structures of chemical mechanical milling tech can be carried out, and the utility model is not
Limited or restriction by the structure and layout (layout) of grind section 100.
Multiple grinding flat plates 110 can be formed with grind section 100, and can be adhered to above each grinding flat plate 110
There is grinding pad 110.It is close in the substrate 10 of supply to the load units being formed on the region of grind section 100 along setting in advance
In the state of the carrier head 120 that fixed path is moved, rotating contact above the grinding pad 110 that lapping liquid is supplied to,
Thus chemical mechanical milling tech can be carried out.
Carrier head 120 can be moved on the region of grind section 100 along the circulating path set, be supplied in loading
The substrate 10 of position is close in the state of carrier head 120, can be transferred by carrier head 120.It is illustrated below as follows
Constitute：Carrier head 120 is to begin to pass through grinding flat plate 110 and along the circulating path of substantially quadrangle form from load units
Move.
Roll-over unit 140 is configured on the region of grind section, can be configured at the substrate 10 for completing grinding technics vertical clear
Position is washed, before the substrate 10 for completing grinding technics is supplied in cleaning part 300, the abradant surface of substrate 10 is may be such that
(polishing surface) is overturn towards opposite direction.
Here, so-called substrate 10, which is configured at vertical cleaning position, refers to that substrate 10 is configured at ground in vertical form
State.
Also, the abradant surface of so-called substrate 10 refers to what is be contacted with grinding pad (the 110 of reference picture 2) and be ground
The face of substrate 10 (bottom surface is above).Substantially in chemical mechanical milling tech, the abradant surface of substrate 10 (for example, substrate
Bottom surface) it can be configured to towards downside, and roll-over unit 140 may be such that substrate is turned upside-down 180 degree, so as to the grinding of substrate 10
Facing to upside.
Specifically, roll-over unit 140 includes：Movable-component 144, it is leaned on the unloading area that can be unloaded with substrate 10
Form that is near and separating is set；Rotary components 146, it is connected to movable-component in the form of (turning) rotation may be reversed
144；Clamp assembly 148, it is connected to rotary components 146 and clamping substrate 10.
Movable-component 144 be formed as grind section 100 can with for unload the unloading area P2 of carried base board 10 close to and
Separate.
The unloading area P2 of substrate 10 can carry out numerous variations according to required condition and design pattern.Preferably, unload
Region P2 can be formed on the mobile route of carrier head (for example, circulating path), to shorten the mobile road of carrier head 120
Footpath.It is further preferable that can be loaded in unloading area P2 to other substrates for performing grinding technics.
In other words, in the case where the unloading area of substrate is formed on the outside of the mobile route of carrier head, in carrier head
Move along after path moves, due to the unloading area of substrate, the unloading area of the substrate must be moved again to
The problem of being additionally formed on the outside of mobile route, therefore be inevitably present the mobile route increase of carrier head.But, in base
In the case that the unloading area P2 of plate 10 is formed on the mobile route of carrier head 120, because carrier head 120 is only on mobile road
Moved on footpath, so may be such that the mobile route of carrier head 120 is minimized.
Movable-component 144 can be leaned on unloading area in several ways according to required condition and design pattern
Form that is near and separating is formed.For example, movable-component 144 is formed as movable linearly to for overturning base from unloading area P2
The upset region P1 (or from upset region to unloading area) of plate 10.Difference according to circumstances, movable-component also may make up
To be rotated on the basis of one place and being moved to unloading area from upset region.
Movable-component 144 may be configured as, and is moved to by the driving force produced by drive component 142 from unloading area
Overturn region.For example, movable-component 144 can be by the driving force that is produced by drive component 142 from unloading area P2 straight lines
It is moved to upset region P1.
Can be used as drive component 142 can provide the conventional drive device of driving force, and the utility model is not
It is driven the limitation or restriction of the species and characteristic of component 142.For example, conventional straight line can be used as drive component 142
Motor (linear motor).Difference according to circumstances, using the combination of common motor and power transmission member (for example, tooth
Wheel (gear) or the combination with (belt)) to constitute drive component, or using screw (screw) part constitute driving group
Part.
Clamp assembly 148 is configured to be connected with movable-component 144 and optionally clamping substrate 10, and clamp assembly
148 can be selectively moved to unloading area P2 or upset region P1 by movable-component 144.
In addition, rotary components 146 are connected to movable-component 144 in the form of (turning) rotation may be reversed, and press from both sides
Tight component 148 is connected to rotary components 146, so that with the rotation of rotary components 146, and the clamp assembly 148 can be relative to
Movable-component 144 rotates.
Conventional rotary shaft and drive device can be used to constitute for rotary components 146, and the structure of rotary components 146
And characteristic can carry out numerous variations according to required condition and design pattern.Difference according to circumstances, also may be configured as clamping
Component is installed on movable-component, and movable-component is arranged at drive component in the form of overturning rotation.
Clamp assembly 148 is formed as the various structures of optionally clamping substrate 10, and the utility model is not
Limited or restriction by the structure and characteristic of clamp assembly 148.For example, clamp assembly 148 may include：First clamping part
148a, the side of its supporting substrate 10；Second clamping part 148b, it is towards the first clamping part 148a and supporting substrate 10
Other sides.
Preparation cleaning unit 200 is configured on the region of grind section 100, and its setting is in order to by roll-over unit
140 pairs of substrates for being configured at vertical cleaning position carry out preparing cleaning (pre-cleaning).
As reference, in the utility model, the preparation cleaning of so-called substrate 10 can be regarded as carrying out in cleaning part 300
Before cleaning, for will be present in the work that the foreign matter on surface (particularly, the abradant surface of substrate) of substrate 10 is once cleaned
Skill.Particularly, in the preparation cleaning of substrate 10 can be present in foreign matter larger in the foreign matter on the surface of substrate 10 (for example,
The foreign matter bigger than 100nm) it is purged.
As described above, substrate 10 is configured in the state of vertical cleaning position using roll-over unit 140, substrate is performed
10 preparation cleaning, accordingly, available favourable effect is, used such as cleaning fluid or change when carrying out preparing cleaning
The surface of substrate 10 will not be residued in or adhere to again by learning the same cleaning fluid of product and the foreign matter separated from substrate etc., and
Be to whereabouts, and naturally from substrate separate.
In addition, roll-over unit 140 essentially performs the process for make it that substrate 10 is overturn, and the mistake being reversed in substrate 10
In the middle of journey so that the upset rotation of substrate 10 stops, so as to which substrate 10 is configured at into vertical cleaning position.Certainly, although
Can when carrying out preparing cleaning by other rotating technics come vertically placement substrate, but with the unrelated shape of preparation cleaning
Formula is in the upset technique of the substrate necessarily carried out, and substrate is configured at vertical cleaning position, so that available favourable effect
It is, simplifies the process for make it that substrate is vertically configured, and reduce overall technique.
Specifically, substrate 10 is configured at vertical cleaning position by rotary components 146 during preparation cleaning is performed.In other words
Say, the substrate 10 of the reception of unit 140 is reversed in unloading area P2 and is transferred to after upset region P1, rotary components 146
90 degree of rotations are carried out, so as to be configured in vertical form.
Also, it is reversed in the upset region P1 substrates 10 for completing grinding technics, and together carries out preparing cleaning, accordingly
It need not additionally be provided for carrying out the other space for preparing cleaning, therefore the layout of existing equipment need not be changed or added
Plus, it is possible to keep almost unchanged, it is possible to decrease because the substrate 10 for completing grinding is directly entered to cleaning part cleaning
The increase of the dustiness in portion 300.
Preferably, isolation block can be formed with, during upset region carries out the preparation cleaning of substrate, it will overturn region
Preparation cleaning treatment space separated with the space beyond it.Here, the preparation cleaning treatment in so-called upset region is empty
Between can be regarded as realizing substrate preparation cleaning space, and preparation cleaning treatment space be formed as by isolation block with
The sealed chamber of independent form (chamber) structure.
Isolation block is formed as providing the various structures with the outside independent sealing space separated, this practicality
It is new not to be limited or restriction by the species and structure of isolation block.
A variety of cleaning sides can be passed through according to required condition and design pattern by the preparation cleaning of preparation cleaning unit 200
Formula is carried out.
For example, preparation cleaning unit 200 may include cleaning fluid injection portion 210, the cleaning fluid injection portion 210 will be clear
Fluid injection is washed to the surface of substrate and carries out preparing cleaning.
Here, so-called cleaning fluid can be regarded as cleaning fluid, steam, xenogenesis fluid etc., it will spray in substrate
Surface so as to prepare the concept that the injection object material of cleaning is included entirely within, and the utility model not by
To the limitation or restriction of the species of cleaning fluid.
For example, referring to Fig. 5, cleaning fluid injection portion 210 includes cleaning fluid ejection section 220, the cleaning fluid ejection section
220 spray cleaning fluid to the surface of substrate 10.
Cleaning fluid ejection section 220 may be configured as spraying multiple kinds of cleaning agent to the surface of substrate 10 according to required condition.
For example, cleaning fluid ejection section 220 may be configured as to SC1 (Standard Clean-1, APM), ammonia (ammonia), hydrogen peroxide,
At least any one is sprayed in pure water (DIW).As reference, the preparation cleaning treatment space in upset region be formed as with
Independent form carries out sealed chamber structure, therefore SC1 etc. chemicals (chemical) can be used as cleaning fluid, and
And due to that can carry out preparing cleaning using chemicals, therefore before being cleaned by cleaning part, presence can be removed in advance
A part of organic matter in the surface of substrate 10.
Reference picture 6, cleaning fluid injection portion 210 may include steam generating part 230, and the steam generating part 230 will be from steaming
The steam that vapour generating unit 232 is produced is sprayed to the surface of substrate 10.
Especially, it is in terms of the organic matter on the surface for being present in substrate 10 is removed from the steam of the injection of steam generating part 230
Effectively.As reference, steam generating part 230 may be configured as guaranteed same in the efficiency for utilizing steam to remove organic matter
When, steam is sprayed with the temperature that can prevent substrate 10 from damaging.Preferably, steam generating part 230 can be with 60 DEG C~120 DEG C
Temperature spray steam.
Reference picture 7 is to Figure 10, and cleaning fluid injection portion 210 may include xenogenesis fluid injection portion 240, the xenogenesis fluid spray
Portion 240 is penetrated by mutually different xenogenesis (heterogeneity) fluid injection to the surface of substrate 10.
Xenogenesis fluid injection portion 240 is formed as the various structures of sprayable xenogenesis fluid.For example, referring to Fig. 7, xenogenesis stream
Body ejection section 240 may include the first fluid supply unit 241 for supplying first fluid and supply second different from first fluid
The second fluid supply unit 242 of fluid, and first fluid and second fluid can be passed through with the state for mixing or separating it is normal
The injection apparatus of nozzle etc. is sprayed to the surface of substrate 10.
For example, referring to Fig. 7, xenogenesis fluid injection portion 240 may include with the first fluid supply unit of independent form formation
241 and second fluid supply unit 242, and in first fluid supply unit 241 and second fluid supply unit 242 first fluid with
And second fluid can be sprayed with the state being separated from each other to the surface of substrate 10.
As other examples in xenogenesis fluid injection portion 250, reference picture 8, xenogenesis fluid injection portion 250 may include supply
The first fluid passage 251 of first fluid, the second fluid passage 252 for supplying second fluid and mixing first fluid and second
Fluid and the mixing jetting passage 253 sprayed, and can be by first fluid and second fluid with mutual in mixing jetting passage 253
The state of mixing is sprayed to the surface of substrate 10 at high speed.
In xenogenesis fluid injection portion 240,250 species and characteristic of sprayable xenogenesis fluid according to required condition and
Design pattern can carry out numerous variations.For example, first fluid can be any one in gaseous fluid and fluid liquid, second
Fluid can be any one in gaseous fluid and fluid liquid.For example, xenogenesis fluid injection portion 240,250 may be configured as by
It is used as the pure water (DIW) and the nitrogen (N as gaseous fluid of fluid liquid2) together sprayed, it is different so as to which removing can be improved
The efficiency of thing.Difference according to circumstances, if it is possible to impact and remove foreign matter that guarantee is produced due to xenogenesis fluid
Efficiency, then can also be used two different kinds of fluid liquid or two different kinds of gaseous fluid.
Reference picture 9 and Figure 10, cleaning fluid injection portion 210 are arranged at unloading area, and including xenogenesis fluid injection portion
260, mutually different xenogenesis fluid injection to the surface of substrate 10, and xenogenesis fluid are sprayed in the xenogenesis fluid injection portion 260
Penetrating portion 260 may include：Dry ice supply unit 262, it supplies dry ice (dry ice) particle；Fluid injection portion 261, it sprays fluid
It is incident upon the surface of substrate 10.
Fluid injection portion 261 can be configured to spray multiple fluid according to required condition and design pattern.For example, fluid sprays
Penetrate portion 261 may be configured as injection gaseous fluid and fluid liquid at least any one.Following composition illustrated below：It is different
Fluid injection portion 260 is planted to be configured to together spray dry-ice particle 262a and gaseous fluid 261a.Difference according to circumstances, xenogenesis stream
Body ejection section also may be configured as together spraying dry-ice particle and fluid liquid (for example, DIW).
Fluid injection portion 260 is formed as a variety of knots that dry-ice particle 262a and fluid 261a can be mixed and sprayed
Structure.For example, fluid injection portion 260 may include：Gaseous fluid feed path 261, it supplies gaseous fluid 261a；Dry ice supply is logical
Road 262, it supplies dry ice 262a；Ejectisome passing away 263, it is mixed to gaseous fluid 261a and dry-ice particle 262a
And injection.
Following composition illustrated below：The dry ice supplied by dry ice feed path 262 is supplied to as liquid condition
Carbon dioxide, while by ejectisome passing away 263, be cured as dry ice solids.
Therefore, gaseous fluid feed path 261 includes：First section FX S1, its section is along gaseous fluid
261a flow direction is fixed；Section reduces region S2, and its flow direction section along gaseous fluid 261a is gradually decreased；
A second section FX S31 part, flow direction of its section along gaseous fluid 261a is fixed.
Thus, gaseous fluid 261a is while by the first section FX S1 so that flowing is stable, and logical
While crossing section reduction region S2, pressure declines so as to which gaseous flow velocity accelerates gradually, is passing through the second section FX
While a S31 part so that flowing is stable.Now, in the intersite since the second section FX S31 every regulation
The first place of distance be formed with the outlet of branched bottom (dry ice feed path), passing through gaseous fluid feed path accordingly
261 by section come the compressed gas that is supplied while reduce region S2, and flow velocity accelerates, and is beginning through second section
While the FX S31 of face, be formed as the stable state of flowing.
In this condition, if the carbon dioxide of the high pressure of liquid condition is flowed into by branched bottom (dry ice feed path)
To the second section FX first position X1 while, the carbon dioxide of liquid condition reaches the of relatively low pressure
Two section FX S31, then be cured as dry ice solids while pressure is reduced sharply.
In addition, gas supply part may be configured as supplying air, nitrogen, argon gas by gaseous fluid feed path 261
It is more than any one in the inert gas of (argon gas) etc..Inert gas is being supplied by gaseous fluid feed path 261
In the case of, it is inhibited due to chemically reacting on the substrate 10, therefore have the advantages that cleaning performance can be improved.
Branched bottom is formed as, with along the gas flow direction identical side of gaseous fluid feed path 261
While to composition, the gaseous fluid feed path 261 that gaseous fluid is supplied with the center line along rectilinear configuration is formed as
Acute angle.Thus, the carbon dioxide of the liquid condition flowed into by branched bottom is smoothly flowed therein to gaseous fluid feed path
The first position X1 of 261 ends.
For example, the carbon dioxide of liquid condition is supplied in branched bottom by the pressure pan (tank) from 402br to 60bar
(dry ice feed path).Also, be injected into the pressure of the carbon dioxide of the liquid condition of branched bottom be also kept as it is higher.By
This, the carbon dioxide of the liquid condition supplied by branched bottom, in first position, X1 collaborates to gaseous fluid feed path
261 moment, the pressure carbon dioxide of high pressure conditions is reduced to low pressure from high pressure, thus, the carbon dioxide solidification of liquid condition
For the dry ice of solid state.
In addition, not being the dry-ice particle that solid state is supplied by branched bottom, but supplied by branched bottom
The carbon dioxide of liquid condition, thus liquid condition carbon dioxide reach low pressure gaseous fluid feed path 261 it is same
When, small dry ice solids are cured as, thus, are flowed in the gas with being flowed by gaseous fluid feed path 261
Together by being equably mixed while passing away.
The section of branched bottom is formed as the section smaller than gaseous fluid feed path 261, and in first position X1
The big I of the dry-ice particle solidified is adjusted by adjusting the cross-sectional sizes of branched bottom.For example, dry-ice particle
Diameter be formed as 100 μm to 2000 μm of size.
Ejectisome passing away 263 continuously and is configured to in-line state with gaseous fluid feed path 261, logical with branch
The first position X1 of road connection forms ejectisome while dry-ice particle is combined with gaseous fluid, and the dry-ice particle is by leading to
What the carbon dioxide for the liquid condition crossed branched bottom and supplied was cured to form.Also, ejectisome is by from gaseous fluid
The gaseous fluid and the flowing pressure of carbon dioxide that feed path 261 and branched bottom are supplied are moved side by side towards floss hole
Go out.
Now, the discharging area S3 of discharge ejectisome includes keeping the second fixed section to fix along flow direction section
The region S31 and section enlarged area S32 gradually expanded along flow direction section.Thus, in the second section FX
While dry ice solids small S31 first position X1 are evenly dispersed in the flowing of the gas of steady flow, pass through
Discharging area S3.Thus, gaseous fluid and small dry ice solid grain are equably mixed with the ejectisome that floss hole is discharged
Discharged in the state of son.
Particularly, while the gaseous fluid that section reduction region S2 flow velocitys accelerate is by section enlarged area, gas
Expansion is so that temperature drop, thus obtains that the effect of the temperature for the ejectisome being discharged can be reduced.Thus, due to by right
The ejectisome that the surface of substrate 10 is hit cools down substrate 10, therefore available effect is, can suppress fine particle
(foreign particle) is again attached to substrate 10 after being floated around, the fine particle is to carry out the cleaning phase to substrate 10
Between the particle that is dropped due to thermophoresis (Thermo-phoresis) effect from substrate 10.
As described above, the xenogenesis fluid injection portion 240 of injection dry ice and fluid can be by a variety of sludge within the shorter time
(sludge) remove totally, a variety of sludge are bonded to the surface for the substrate 10 for carrying out chemical mechanical milling tech, and not
Only so that the scrub process time described later shortens, and the chemistry of the foreign matter for removing the surface for being attached to substrate 10 can be reduced
The amount of product.
In addition, in embodiment of the present utility model, although the carbon dioxide solidification for causing liquid condition has been illustrated
So as to supply the compositions of dry ice solids, but difference according to circumstances, the dry ice solids having been cured also may make up
To be supplied by dry ice feed path.In addition, the xenogenesis fluid injection portion of injection dry ice and fluid may be alternatively formed to have length
Spend the floss hole of long gap (slit) form.
Also, in embodiment of the present utility model that is foregoing and showing, although following composition has been illustrated：Injection
The xenogenesis fluid injection portion of dry ice and fluid includes gaseous fluid feed path, branched bottom and passing away, but according to feelings
The difference of condition, may be configured as by with the xenogenesis fluid injection including gaseous fluid feed path, branched bottom and passing away
The same or analogous structure in portion is with high speed jet cleaning liquid or chemicals.
In addition, in the xenogenesis fluid of injection gaseous fluid and fluid liquid (or two kinds of gaseous fluids or two kinds of fluid liquids)
In the case of ejection section, also applicable and injection dry ice and fluid the same or analogous injection structure in xenogenesis fluid injection portion.
For example, the xenogenesis fluid injection portion of injection gaseous fluid and fluid liquid may include：Gas supplying passage be (reference picture 9
261), it, which is provided with, gradually decreases along the flow direction section of gas so that the section reduction area of the flow velocity increase of gas
Domain, and it is formed with the 3rd region from section reduction region to floss hole；Liquid supply passage (the 262 of reference picture 9), its
Liquid is collaborated to gas supplying passage the first position for being adjacent to floss hole.
In addition, mega sonic wave (megasonic) generator (not shown) may connect to cleaning fluid injection portion 210, and million
Sound wave generator is sprayed to the cleaning fluid on the surface of substrate 10 or chemicals as medium so that base using cleaning fluid injection portion 210
The surface vibration of plate 10, is efficiently separated so as to will be present in the foreign matter on surface of substrate 10 from substrate 10.
In addition, reference picture 11, rotary components 146 may be configured as during carrying out preparing cleaning so that being configured at vertical cleaning
The vibration of substrate 10 or so (oscillation) of position.
Specifically, in the state of substrate 10 is configured at vertical cleaning position, rotary components 146 are relative to movable-component
(swing) rotation is swung with defined angle to the left and right, so that being clamped the substrate 10 of the clamping of component 148 can be oscillated.
As described above, entering in cleaning fluid injection to the surface of substrate 10 and during carrying out preparing cleaning to substrate 10
Row vibration, accordingly, available favourable effect is so that the efficiency cleaned by cleaning fluid is maximized, and
More the usage amount of fluid is cleaned in reduction.
Difference according to circumstances, also may be such that the vibration of cleaning fluid injection portion, rather than substrate, but in order that must clean stream
Body ejection section vibrates, and needs the extra other rotating device for being provided for causing the rotation of cleaning fluid injection portion.But,
It can be used in the structure that substrate 10 is vibrated and rotated and configured rotary components 146 for the upset of substrate 10, therefore, can
Obtained favourable effect is, it is not necessary to change or add other device, so that structure and technique simplify.
Cleaning fluid injection portion 210 is formed as can be by cleaning fluid injection to the substrate 10 for being configured at vertical cleaning position
Various structures.
For example, referring to Figure 12, cleaning fluid injection portion 210 includes multiple injection nozzles 211 for jet cleaning fluid,
Multiple injection nozzles 211 are configured in the form of being configured on straight line spacing as defined in interval and separated.As described above, logical
Multiple injection nozzles 211 are crossed, can be sprayed to wider projected area (preferably, the projected area corresponding with the diameter of substrate)
Fluid is cleaned, so that available favourable effect is, the efficiency for by cleaning fluid prepare cleaning is improved.
As another example, reference picture 13, cleaning fluid injection portion 210 includes multiple sprays for jet cleaning fluid
Nozzle 212 is penetrated, circumferencial direction of multiple injection nozzles 212 along substrate 10 forms generally arcuate state.As described above, by multiple
Injection nozzle 212 come the cleaning fluid that sprays with uniform jet length and injection pressure injection to substrate so that available
Favourable effect is, improves the uniformity for by cleaning fluid prepare cleaning.Differently, cleaning fluid injection portion also may be used
It is set to the structure of the jet with longer gar shape.
In addition, reference picture 14, it may include substrate rotating part 149, during carrying out preparing cleaning, it is in clamp assembly 148
It is upper that substrate 10 is rotated on clamp assembly 148.
For example, substrate rotating part 149 may include with rotatable form be installed on clamp assembly 148 and with the side of substrate 10
Multiple rotary bodies of edge contact, with the rotation of each rotary body, substrate 10, can in the state of vertical cleaning position is configured at
Rotated relative to clamp assembly 148.
As described above, in the state of substrate 10 is configured at vertical cleaning position, progress prepares cleaning (for example, cleaning stream
Body sprays or brush contact) during, substrate 10 circumferentially rotates, so that available favourable effect is, improves
The preparation cleaning efficiency and the uniformity of substrate 10.
In addition, reference picture 15, preparation cleaning unit 200 may include that rotating contact, in the cleaning brush 280 on the surface of substrate, is matched somebody with somebody
Being placed in the preparation cleaning of the substrate 10 of vertical cleaning position can be realized by cleaning brush 280.
As cleaning brush 280 can be used by can CONTACT WITH FRICTION in the surface of substrate 10 conventional material (for example, porous
The polyvinyl alcohol (polyvinyl alcohol) of material) constitute brush.Also, it can be formed with use on the surface of cleaning brush 280
It is raised in the multiple cleanings for the contact performance for improving brush.Certainly, difference according to circumstances, which can also be used, does not clean projection
Brush.
In addition, in order to which rubbing by cleaning brush 280 and substrate 10 can be improved during performing by the cleaning of cleaning brush 280
The efficiency that contact is cleaned is wiped, also can be during cleaning brush 280 be contacted with substrate 10, will by cleaning fluid injection portion 210
Chemicals, cleaning fluid, steam etc. are supplied in the contact site of cleaning brush 280 and substrate 10.
Now, cleaning brush 280 is rotatable to connect under the state (relative to the state of ground level) flatly configured
Touch in the surface of substrate 10.Difference according to circumstances, as shown in figure 16, cleaning brush 280 are obliquely matched somebody with somebody with predetermined angular θ
In the state of putting, rotating contact is in the surface of substrate 10, so as to can also improve the efficiency cleaned by cleaning brush 280.
Referring again to Fig. 2, cleaning part 300 is arranged at the neighbouring sidepiece of grind section 100, and its setting is in order to residual
Stay and cleaned in the foreign matter in upset region prepare the surface of the substrate 10 of cleaning.
As reference, in the utility model, the so-called cleaning carried out in cleaning part 300 to substrate 10 can be regarded as using
In cleaning residues in the surface of substrate 10 and (particularly, the abradant surface of substrate, also may be used to greatest extent after cleaning prepare
The non-abrasive side of cleaning base plate) foreign matter technique.Particularly, can be to being present in the surface of substrate 10 in the cleaning of substrate 10
Foreign matter in less foreign matter (for example, foreign matter of 40~100nm sizes) carried out with the foreign matter that is adhered to stronger adhesive force it is clear
Remove.
Also, the substrate 10 cleaned in cleaning part 300 is configured to, with without cleaning state set it is next
Technique.Here, so-called can be regarded as with by cleaning part 300 with carrying out next technique to substrate 10 without cleaning state
Cleaning completes whole cleanings to substrate 10 as the form of last technique, the substrate to completing cleaning
10 can carry out next technique (for example, depositing operation) in the case of not extra cleaning.
Cleaning part 300 is formed as carrying out cleaning and the structure of drying process of multiple steps, and this practicality is new
Type is not limited or restriction by the structure and layout of the cleaning station (station) for constituting cleaning part 300.
Preferably, cleaning part 300 in order to can effectively carry out for remove residue in substrate 10 surface organic matter with
And the cleaning of other different foreign matters, it may include：Contact cleaning unit 400, it is contacted with substrate 10 in the form of physics
Surface and cleaned；Contactless cleaning unit 500, noncontact is in the surface of substrate 10 in the form of physics and enters for it
Row cleaning.Difference according to circumstances, cleaning part also may be configured as only including contact cleaning unit and contactless cleaning list
Any one in member.
Contact cleaning unit 400 is formed as being contacted with the surface of substrate 10 in the form of physics and can cleaned
Various structures.Following composition illustrated below：Contact cleaning unit 400 include the first contact cleaning unit 402 with
And the second contact cleaning unit 404.
For example, the first contact cleaning unit 402 and the second contact cleaning unit 404 may include to contact while rotation
Cleaning brush in the surface of substrate 10.
For example, the substrate 10 of preparation cleaning is under by conventional axle (spindle) (not shown) state of rotation,
It can be cleaned by a pair of cleaning brush of rotation.Difference according to circumstances, also may be configured as, substrate without rotation but
In the state of fixation, cleaned by cleaning brush.Differently, only one cleaning brush can only to a plate face of substrate (for example,
Abradant surface) cleaned.
In addition, in order to which the CONTACT WITH FRICTION by cleaning brush with substrate 10 can be improved during being cleaned by cleaning brush
And the efficiency cleaned, it may include chemicals supply unit, it supplies chemicals during cleaning brush is contacted with substrate 10
Award the contact site of cleaning brush and substrate 10.
Chemicals supply unit may be configured as by chemicals spray into substrate 10 or cleaning brush at least any one, and
And injection to the species and characteristic of the chemicals of cleaning brush can carry out numerous variations according to required condition and design pattern.It is excellent
Selection of land, can be used SC1 (Standard Clean-1, APM) and hydrofluoric acid (HF) as the chemicals of injection to cleaning brush
In at least any one, so as to which the efficiency for removing small organic matter can be improved.Difference according to circumstances, also may be configured as clear
Spray pure water rather than chemicals, or together injection chemicals and pure water in the contact site scrubbed with substrate.
In addition, can be by conventional in the substrate that the first contact cleaning unit (for example, cleaning brush) carries out cleaning treatment
Transfer arm is transferred to the second contact cleaning unit.Transfer arm is formed as that the first contact cleaning unit and second can be reciprocated
Contact cleaning unit, can be transferred to the second contact clear in the first contact cleaning unit by the substrate 10 for carrying out cleaning treatment
Wash unit.As reference, in the first contact cleaning unit and the second contact cleaning unit respectively simultaneously to mutually different
During substrate 10 is cleaned, transfer arm temporarily can hide on region wait, described to hide region and be formed at the first contact
Between cleaning unit and the second contact cleaning unit.
In addition, can be transferred in the substrate 10 that the second contact cleaning unit carries out cleaning treatment by conventional transfer arm
Contactless cleaning unit 500.Transfer arm is formed as that the second contact cleaning unit can be reciprocated and contactless cleaning is single
Member 500, contactless cleaning unit 500 can be transferred in the second contact cleaning unit by the substrate 10 for carrying out cleaning treatment.
As reference, mutually different substrate 10 is carried out simultaneously respectively with contactless cleaning unit in the second contact cleaning unit
During cleaning, transfer arm can temporarily hide on region wait, it is described hide region be formed at the second contact cleaning unit and
Between contactless cleaning unit.
Contactless cleaning unit 500 is formed as in the form of physics noncontact (non-contact) in substrate 10
Surface and the various structures that can be cleaned.Following composition illustrated below：It is non-that contactless cleaning unit 500 includes first
The contactless cleaning unit 504 of contact cleaning unit 502 and second.Difference according to circumstances, contactless cleaning unit
Also it can be made up of only one cleaning unit.
Preferably, it may include isolation block, during performing cleaning in contactless cleaning unit 500, it is by noncontact
The cleaning treatment space of formula cleaning unit 500 is separated with the space beyond it.Here, so-called contactless cleaning unit
500 cleaning treatment space can be regarded as completing the space of cleaning by contactless cleaning unit 500, and contactless
The cleaning treatment space of cleaning unit 500 is formed as carrying out sealed chamber structure by isolation block in independent form.
Contactless cleaning unit 500 can be configured to carry out in several ways clearly according to required condition and design pattern
Wash.
For example, contactless cleaning unit 500 may include chemicals ejection section, steam generating part, cleaning fluid ejection section,
In xenogenesis fluid injection portion, isopropanol (Isopropyl Alchol) ejection section at least any one, chemicals injection
Portion will steam chemicals (chemical) injection more than at least one species to the surface of substrate 10, the steam generating part
Vapour is sprayed to the surface of substrate 10, and the cleaning fluid ejection section sprays cleaning fluid to the surface of substrate 10, the xenogenesis fluid
Ejection section is by mutually different xenogenesis (heterogeneity) fluid injection to the surface of substrate 10, the isopropanol ejection section
By isopropanol (IPA) injection to the surface of substrate 10.
In addition, Figure 17 is the block diagram for illustrating the operating method according to chemical mechanical polishing device of the present utility model.
And for it is identical with foregoing composition and equivalent to identical part assign it is same or equivalent in identical reference numeral, and
Omit detailed description thereof.
Reference picture 17, according to one embodiment of the present utility model, chemical mechanical polishing device can be as follows
To be operated：Grinding steps S10, is ground to substrate 10；Substrate configuration step S20 so that complete the base of grinding technics
Plate 10 is configured at vertical cleaning position；Preparation cleaning step S30, carries out preparing cleaning to the substrate for being configured at vertical cleaning position
(pre-cleaning)。
Step 1：
First so that the grinding layer of substrate 10 contacts with grinding pad 110 and is ground S10.
In grinding steps S10, substrate 10 can be ground pad 110 by carrier head 120 and pressurize, and lapping liquid can be supplied to
Above grinding pad 110.
Step 2：
Next, so that the substrate 10 for completing grinding technics is configured at vertical cleaning position S20.
Here, so-called substrate 10, which is configured at vertical cleaning position, refers to that substrate 10 is vertically arranged at the shape on ground
State.
For example, in substrate configuration step S20, completing the substrate 10 of grinding technics can be configured at by roll-over unit 140
Vertical cleaning position.
Preferably, in substrate configuration step S20, substrate abradant surface (polishing surface) with from bottom
In the way that direction is reversed towards the form of upper direction, substrate is configured at vertical cleaning position.
As described above, in substrate configuration step S20, between during substrate 10 is reversed so that substrate 10 is turned over
Stopping is rotated, so as to which substrate 10 is configured at into vertical cleaning position.Certainly, also can (not be by other rotating technics
Using roll-over unit 140 but utilize the rotating technics of other rotating devices) come vertically placement substrate, it is but clear with preparation
Wash independently in the upset technique of the substrate necessarily carried out, substrate is configured at vertical cleaning position, accordingly, it is available favourable
Effect be, simplify and cause the process that vertically configures of substrate, and reduce overall technique.
Step 3：
Next, carrying out preparing cleaning (pre-cleaning) S30 to the substrate for being configured at vertical cleaning position.
Here, the preparation cleaning of so-called substrate 10 is it is understood that to being present in base before cleaning part 300 is cleaned
The technique that the foreign matter on the surface (particularly, the abradant surface of substrate) of plate 10 is once cleaned.
In preparation cleaning step S30, it is configured at by substrate 10 in the state of vertical cleaning position, performs substrate 10
Preparation cleaning, accordingly, available favourable effect is, used such as cleaning fluid or chemistry when carrying out preparing cleaning
The same cleaning fluid of product and the foreign matter etc. separated from substrate will not residue in the surface of substrate 10 or adhere to again, but
To whereabouts, and separated naturally from substrate.
Preparation cleaning in preparation cleaning step S30 can pass through a variety of cleaning sides according to required condition and design pattern
Formula is carried out.
For example, preparation cleaning step S30 may include that will clean fluid injection to the cleaning fluid injection on the surface of substrate walks
Suddenly, can will cleaning fluid injection is to the surface of substrate and performs prepared cleaning.Here, it is so-called cleaning fluid can be regarded as
Cleaning fluid, steam, xenogenesis fluid etc. are the same, will spray in the surface of substrate so as to prepare the injection object material of cleaning
The concept being included entirely within, and the limitation or restriction of the species of the not washed fluid of the utility model.
In addition, preparation cleaning step S30 may include the brush cleaning step that brush cleaning is carried out to the surface of substrate, it can make
Cleaning brush rotating contact is in the surface of substrate and carries out preparing cleaning.
Also, in preparation cleaning step S30, may be configured as to the abradant surface (polishing surface) of substrate and
At least any one progress prepares cleaning in non-abrasive side (non-polishing surface).
Preferably, it may include oscillation step, during carrying out preparing cleaning so that be configured at the substrate of vertical cleaning position
Left and right vibrates.As described above, in cleaning fluid injection to the surface of substrate and during carrying out preparing cleaning so that substrate shakes
Swing, accordingly, available favourable effect is so that the efficiency cleaned by cleaning fluid is maximized, and more
The usage amount (reference picture 11) of reduction cleaning fluid.
In addition, it may include spin step, during carrying out preparing cleaning so that be configured at the substrate edge of vertical cleaning position
The circumferencial direction rotation of substrate.As described above, in the state of substrate 10 is configured at vertical cleaning position, carrying out preparing clear
During washing (for example, cleaning fluid injection or brush contact), substrate 10 circumferentially rotates, so that available favourable
Effect is, improves the preparation cleaning efficiency and the uniformity (reference picture 14) of substrate 10.
Step 4：
Next, carrying out cleaning S40 to the substrate of preparation cleaning.
The so-called cleaning carried out in cleaning step S40 to substrate 10 is it is understood that after progress prepares cleaning, use
In the different of the surface (particularly the abradant surface of substrate, can also be cleaned to the non-abrasive side of substrate) to residuing in substrate 10
The technique that thing is farthest cleaned.
Cleaning step S40 may be configured as carrying out cleaning and the structure of drying process of multiple steps, and this practicality
It is new not to be limited or restriction by composition cleaning step S40 cleaning way and species.
Preferably, in cleaning step S40, in order to which the surface that can effectively carry out residuing in substrate 10 for removing has
The cleaning of machine thing and other different foreign matters, it may include：Contact cleaning step, is contacted with substrate 10 in the form of physics
Surface and cleaned；Contactless cleaning step, noncontact is in the surface of substrate 10 and progress in the form of physics
Cleaning.Difference according to circumstances, cleaning step also may be configured as only including contact cleaning step and contactless cleaning is walked
Any one in rapid.
As described above, although illustrated with reference to preferred embodiment of the present utility model, it is understood that being, if phase
The skilled practitioner of technical field is answered, no more than the thought of the present utility model and field for being recorded in following claims
In the range of can carry out a variety of modifications and changes to the utility model.
Label declaration
10：Substrate 100：Grind section
110：Grinding flat plate 120：Carrier head
140：Roll-over unit 142：Drive component
144：Movable-component 146：Rotary components
148：Clamp assembly 149：Substrate rotating part
200：Preparation cleaning unit 210：Clean fluid injection portion
220：Cleaning fluid ejection section 230：Steam generating part
240~260：Xenogenesis fluid injection portion 280：Cleaning brush
300：Cleaning part
Claims (17)
1. a kind of chemical mechanical polishing device, it is characterised in that including:
Grind section, it carries out chemical mechanical milling tech to substrate；
Roll-over unit, its described substrate for complete grinding technics is vertically arranged at vertical cleaning position,
The roll-over unit includes：
Movable-component, its grind section with can with for unload the unloading area of the substrate close to and the shape that separates
Formula is set；
Rotary components, it is connected to the movable-component in the form of rotation may be reversed；
Clamp assembly, it is connected to the rotary components and clamps the substrate；
Preparation cleaning unit, it carries out preparing cleaning to the substrate for being configured at the vertical cleaning position.
2. chemical mechanical polishing device according to claim 1, it is characterised in that
The roll-over unit the substrate abradant surface with from bottom direction towards in the way being reversed in the form of upper direction,
So that the substrate is configured at the vertical cleaning position.
3. chemical mechanical polishing device according to claim 1, it is characterised in that
The rotary components make it that the substrate for being configured at the vertical cleaning position is left during the preparation cleaning is carried out
Right vibration.
4. chemical mechanical polishing device according to claim 1, it is characterised in that including：
Substrate rotating part, during the preparation cleaning is carried out, the substrate rotating part causes the substrate in the clamping group
Rotated on part.
5. chemical mechanical polishing device according to claim 1, it is characterised in that
The unloading area, which is configured on the region of the grind section, transfers the substrate along the circulating path set
Carrier head transfer path on.
6. chemical mechanical polishing device according to claim 1, it is characterised in that
Other substrates for performing grinding technics can be loaded in the unloading area.
7. chemical mechanical polishing device according to claim 1, it is characterised in that
The roll-over unit and the prepared cleaning unit are configured at the region of the grind section.
8. chemical mechanical polishing device as claimed in any of claims 1 to 7, it is characterised in that the preparation is clear
Washing unit includes：
Fluid injection portion is cleaned, it will clean fluid injection to the surface of the substrate.
9. chemical mechanical polishing device according to claim 8, it is characterised in that the cleaning fluid injection portion includes：
Cleaning fluid ejection section, it sprays cleaning fluid to the surface of the substrate.
10. chemical mechanical polishing device according to claim 8, it is characterised in that the cleaning fluid injection portion includes：
Steam generating part, it sprays steam to the surface of the substrate.
11. chemical mechanical polishing device according to claim 8, it is characterised in that the cleaning fluid injection portion includes：
Xenogenesis fluid injection portion, it is by mutually different xenogenesis fluid injection to the surface of the substrate.
12. chemical mechanical polishing device according to claim 11, it is characterised in that the xenogenesis fluid injection portion bag
Include：
First fluid supply unit, it supplies first fluid；
Second fluid supply unit, it supplies the second fluids different from the first fluid,
The first fluid and the second fluid are sprayed to the surface of the substrate with the state for mixing or separating.
13. chemical mechanical polishing device according to claim 11, it is characterised in that the xenogenesis fluid injection portion bag
Include：
Dry ice supply unit, it supplies dry-ice particle；
Fluid injection portion, its by fluid injection to the surface of the substrate,
The dry-ice particle and the fluid are sprayed to the surface of the substrate with the state being mutually mixed.
14. chemical mechanical polishing device as claimed in any of claims 1 to 7, it is characterised in that the preparation is clear
Washing unit includes：
Cleaning brush, its rotating contact is in the surface of substrate.
15. chemical mechanical polishing device as claimed in any of claims 1 to 7, it is characterised in that
The prepared cleaning unit is at least any one described preparation of progress is clear in the abradant surface and non-abrasive side of the substrate
Wash.
16. chemical mechanical polishing device as claimed in any of claims 1 to 7, it is characterised in that including：
Cleaning part, it is cleaned to the substrate that the preparation cleaning is carried out by the prepared cleaning unit.
17. chemical mechanical polishing device according to claim 16, it is characterised in that
The cleaning part include in contact cleaning unit and contactless cleaning unit at least any one, the contact is clear
Unit is washed to be contacted with the surface of the substrate in the form of physics and carry out the cleaning, the contactless cleaning unit with
The form noncontact of physics is in the surface of the substrate and carries out the cleaning.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020160094510A KR101816694B1 (en) | 2016-07-26 | 2016-07-26 | Chemical mechanical polishing apparatus and control method thereof |
| KR10-2016-0094510 | 2016-07-26 |
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| Publication Number | Publication Date |
|---|---|
| CN206500996U true CN206500996U (en) | 2017-09-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621404350.5U Active CN206500996U (en) | 2016-07-26 | 2016-12-20 | Chemical mechanical polishing device |
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| Country | Link |
|---|---|
| KR (1) | KR101816694B1 (en) |
| CN (1) | CN206500996U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110524411A (en) * | 2019-09-29 | 2019-12-03 | 苏州光斯奥光电科技有限公司 | A kind of big plate ground and cleaned system |
| CN110970323A (en) * | 2019-03-15 | 2020-04-07 | 天津华海清科机电科技有限公司 | Substrate processing device and processing system |
| WO2024002312A1 (en) * | 2022-06-30 | 2024-01-04 | 杭州众硅电子科技有限公司 | Chemical mechanical planarization apparatus and wafer transfer method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111512425A (en) | 2018-06-27 | 2020-08-07 | 应用材料公司 | Temperature control for chemical mechanical polishing |
| CN109227359A (en) * | 2018-10-19 | 2019-01-18 | 清华大学 | The post-processing unit of chemical-mechanical polishing system and method, wafer |
| US11628478B2 (en) | 2019-05-29 | 2023-04-18 | Applied Materials, Inc. | Steam cleaning of CMP components |
| TW202110575A (en) | 2019-05-29 | 2021-03-16 | 美商應用材料股份有限公司 | Steam treatment stations for chemical mechanical polishing system |
| US11633833B2 (en) | 2019-05-29 | 2023-04-25 | Applied Materials, Inc. | Use of steam for pre-heating of CMP components |
| JP2023516871A (en) | 2020-06-29 | 2023-04-21 | アプライド マテリアルズ インコーポレイテッド | Control of temperature and slurry flow rate in CMP |
| JP2023518650A (en) | 2020-06-29 | 2023-05-08 | アプライド マテリアルズ インコーポレイテッド | Steam generation control for chemical mechanical polishing |
| CN115461193A (en) | 2020-06-30 | 2022-12-09 | 应用材料公司 | Apparatus and method for CMP temperature control |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003142444A (en) * | 2001-10-31 | 2003-05-16 | Applied Materials Inc | Washing apparatus |
| JP2011077131A (en) * | 2009-09-29 | 2011-04-14 | Tokyo Electron Ltd | Device for cleaning semiconductor manufacturing apparatus |
-
2016
- 2016-07-26 KR KR1020160094510A patent/KR101816694B1/en active IP Right Grant
- 2016-12-20 CN CN201621404350.5U patent/CN206500996U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110970323A (en) * | 2019-03-15 | 2020-04-07 | 天津华海清科机电科技有限公司 | Substrate processing device and processing system |
| CN110524411A (en) * | 2019-09-29 | 2019-12-03 | 苏州光斯奥光电科技有限公司 | A kind of big plate ground and cleaned system |
| WO2024002312A1 (en) * | 2022-06-30 | 2024-01-04 | 杭州众硅电子科技有限公司 | Chemical mechanical planarization apparatus and wafer transfer method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101816694B1 (en) | 2018-01-11 |
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Effective date of registration: 20180416 Address after: Korea city Daoan Patentee after: Case Polytron Technologies Inc Address before: Korea city Daoan Patentee before: K. C. Tech Co., Ltd. |