KR20170119513A - light emitting device and light emitting bulb comprising the same - Google Patents

light emitting device and light emitting bulb comprising the same Download PDF

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Publication number
KR20170119513A
KR20170119513A KR1020160047638A KR20160047638A KR20170119513A KR 20170119513 A KR20170119513 A KR 20170119513A KR 1020160047638 A KR1020160047638 A KR 1020160047638A KR 20160047638 A KR20160047638 A KR 20160047638A KR 20170119513 A KR20170119513 A KR 20170119513A
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South Korea
Prior art keywords
light emitting
conductive transparent
emitting diode
transparent substrate
light
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KR1020160047638A
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Korean (ko)
Inventor
김대원
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주식회사 루멘스
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Priority to KR1020160047638A priority Critical patent/KR20170119513A/en
Priority to US15/335,231 priority patent/US10109775B2/en
Publication of KR20170119513A publication Critical patent/KR20170119513A/en
Priority to US16/127,616 priority patent/US10234088B2/en
Priority to US16/260,657 priority patent/US10487996B2/en

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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2103/00—Elongate light sources, e.g. fluorescent tubes
    • F21Y2103/10—Elongate light sources, e.g. fluorescent tubes comprising a linear array of point-like light-generating elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S362/00—Illumination
    • Y10S362/80—Light emitting diode

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Led Device Packages (AREA)

Abstract

A filament type light emitting device is disclosed. This light emitting element comprises a non-conductive transparent substrate; At least one light emitting diode chip arranged on an upper surface of the non-conductive transparent substrate and including an input end and an output end extending toward the non-conductive transparent substrate; And a conductive transparent connection portion formed on the upper surface of the non-conductive transparent substrate and electrically connected to the input terminal and the output terminal, wherein between the non-conductive transparent substrate and the light emitting diode chip, light having no reflector A transmissive region is provided so that light from the light emitting diode chip is emitted backward through the light transmission region and the non-conductive transparent substrate.

Description

TECHNICAL FIELD The present invention relates to a light emitting device and a light emitting bulb including the light emitting device.

BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a filament type light emitting device and a light emitting bulb including the filament type light emitting device. More particularly, the present invention relates to a filament type light emitting device using a flip chip type light emitting diode chip without a reflector capable of emitting light to both front and rear sides, Emitting bulb.

Semiconductor light sources using, for example, light emitting diodes have many advantages, such as high efficiency, long lifetime and small size compared to conventional light sources. Many lighting devices utilizing semiconductor light sources have been developed, one of which is a light bulb. Most light emitting bulbs include a heat sink, a plate-shaped submount mounted on the heat sink, and one or more light emitting elements mounted on the submount. However, such a light bulb has a narrow range of light-directing angles, and thus has a limitation in that it emits light only within a certain range of forward angles. On the other hand, a light-emitting bulb having a wide light-guiding angle by providing light-emitting elements on various surfaces of a multi-sided body provided on the inside of the globe,

However, although there is an increase in the light emission amount in the lateral direction, such a light emission bulb is disadvantageous in that there is no increase in the amount of light emitted rearward, and also that it is heavy and has a bad appearance.

In response thereto, a light emitting bulb having a plurality of light emitting elements provided in a globe in a filament type has been developed. In such a conventional light emitting bulb, the light emitting element includes a long package and a plurality of light emitting diode chips mounted on the long package. Each light emitting element has lead terminals on both end sides. The light emitting elements are connected in series by using the lead terminals. When the light emitting elements are arranged so that the light emitting directions are changed in turn, the afterglow effect can be obtained as a whole. However, since the light emitted from each light emitting element is directed only in one direction, it is difficult to obtain a desired light directing angle characteristic unless a large number of light emitting elements are used.

On the other hand, in the conventional flip chip type light emitting diode chip, a light transmitting substrate such as a sapphire substrate is disposed on the upper side of the epi layer, an input end and an output end including the electrode pad and / or bump are formed on the lower side of the epi layer, And has a structure including a filler for reflecting and reflecting light, so that the bonding wire is omitted. However, the conventional flip chip type light emitting diode chip can not be applied as a filament type light emitting device which needs a rearward light distribution due to a reflector.

US7217004 (May 15, 2007)

SUMMARY OF THE INVENTION It is an object of the present invention to provide a flip chip type light emitting diode chip having a flip chip type light emitting diode chip mounted on a non-conductive transparent substrate, Area, so that it is possible to emit a large amount of light to both the front and rear sides, thereby providing a light emitting element which can be usefully used in a light emitting bulb.

A light emitting device according to one aspect of the present invention includes: a non-conductive transparent substrate; At least one light emitting diode chip mounted on an upper surface of the non-conductive transparent substrate and including an input end and an output end extending toward the non-conductive transparent substrate; And a conductive transparent connection portion formed on the upper surface of the non-conductive transparent substrate and electrically connected to the input terminal and the output terminal, wherein between the non-conductive transparent substrate and the light emitting diode chip, light having no reflector A transmissive region is provided so that light from the light emitting diode chip is emitted backward through the light transmission region and the non-conductive transparent substrate.

According to one embodiment, the input end and the output end may include electrode pads and bumps extending from the light emitting diode chips toward the non-conductive transparent substrate.

According to one embodiment, the light transmitting region may be formed as a void space between the non-conductive transparent substrate and the LED chip.

According to one embodiment, the light transmitting region may be formed by filling an insulating transparent material into a void space between the non-conductive transparent substrate and the light emitting diode chip.

According to one embodiment, the insulating transparent material may include a phosphor.

According to an embodiment, the light emitting device may further include a transparent encapsulant that encapsulates the non-conductive transparent substrate and the LED chip.

According to an embodiment, the light emitting device may further include a pair of external extension terminals electrically connected to the LED chip and protruding outward from both ends of the translucent encapsulant.

According to one embodiment, the at least one light emitting diode chip comprises n light emitting diode chips arrayed on the non-conductive transparent substrate, the conductive transparent connections forming the n light emitting diode chips on the non- Connect in series.

According to one embodiment, input terminals and output terminals are formed on one side of the upper surface and the other side of the upper surface of the non-conductive transparent substrate, and the n light emitting diode chips are electrically connected to the input terminal and the output terminal It is electrically connected in series.

According to an exemplary embodiment, the conductive transparent connection portions may include a first conductive transparent connection portion connecting the input terminal and the input terminal of the first LED chip among the n LED chips.

According to an exemplary embodiment, the conductive transparent connection portions may further include a second conductive transparent connection portion spaced apart from the first conductive connection portion and connected to an output terminal of the first light emitting diode chip.

According to an embodiment, the second conductive transparent connection part may be connected to the input terminal of the second light emitting diode chip among the n light emitting diode chips.

According to an exemplary embodiment, the conductive transparent connection portions may include an (n + 1) conductive transparent connection portion connecting the output terminal and an output terminal of the nth light emitting diode chip among the n light emitting diode chips.

According to an embodiment, the conductive transparent connection portions may further include an n-th conductive transparent connection portion spaced apart from the (n + 1) conductive transparent connection portion and connected to an input terminal of the nth light emitting diode chip.

According to one embodiment, the conductive transparent connections may comprise a metal oxide.

According to one embodiment, the conductive transparent connections may be formed on the non-conductive transparent substrate with a metal material including at least one of Ni, Au, Pt, Pd, and W transparent to a thickness of 10 탆 or less.

According to an exemplary embodiment, the conductive transparent connection portions may be formed of ITO. In this case, an additional metal electrode layer may be interposed between the conductive transparent connection portion and the bumps of the input or output terminal.

According to another aspect of the present invention there is provided a light bulb comprising: a base; A translucent globe coupled to the base; Leads connected to the socket base in the transparent globe; And at least one light emitting element connected to the leads and supplied with power through the leads and emitting light forward and backward, wherein the light emitting element is mounted on the non-conductive transparent substrate and the non-conductive transparent substrate At least one light emitting diode chip including an input end and an output end extending toward the non-conductive transparent substrate, conductive transparent connecting parts formed in advance on the non-conductive transparent substrate and electrically connected to the input end and the output end, A light transmitting region is provided around the input end and the output end between the non-conductive transparent substrate and the light emitting diode chip so that light from the light emitting diode chip is emitted through the light transmitting region and the non-conductive transparent substrate.

It is preferable that the amount of light emitted to the rear side through the light transmitting region and the non-conductive transparent substrate is larger than the amount of light emitted to the opposite side of the non-conductive transparent substrate. More specifically, when the amount of light emitted to the outside is 100%, the amount of light emitted to the outside through the non-conductive transparent substrate is 70% and the amount of light emitted to the opposite side of the non-conductive transparent substrate may be 30% .

According to one embodiment, the input end and the output end may include electrode pads and bumps extending from the light emitting diode chips toward the non-conductive transparent substrate. According to an embodiment, the light transmitting region may be formed as an empty space between the non-conductive transparent substrate and the LED chip, or may be filled with an insulating transparent material into the empty space between the non-conductive transparent substrate and the LED chip .

According to the present invention, a flip chip type light emitting diode chip is mounted on a non-conductive transparent substrate, and a light transmitting region is provided without a reflector between the bottom surface of the flip chip type light emitting diode chip in which the input terminal and the output terminal are located and the non- A light emitting device capable of emitting a large amount of light to both the front and rear sides is realized, and this light emitting device can be advantageously used for the light emitting bulb.

1 is a view for explaining the light bulb as a whole.
2 is a plan sectional view for explaining a filament type light emitting device applied to a light bulb according to an embodiment of the present invention.
3 is a side cross-sectional view showing the filament type light emitting device shown in Fig.
4 is an enlarged plan sectional view of a filament type light emitting device according to an embodiment of the present invention.
5 is an enlarged side sectional view of a filament type light emitting device according to an embodiment of the present invention.
6 is a side cross-sectional view partially showing a filament type light emitting device according to another embodiment of the present invention.
7 is a side cross-sectional view partially showing a filament type light emitting device according to another embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

1, the light emitting bulb includes a base 2000, a translucent glove 3000 coupled to a front end opening of the base 2000, and a transparent globe 3000 installed inside the base 3000, And a plurality of light emitting devices 4200 and 4400 disposed in the light transmissive globe 3000 and supplied with power through the power supply leads 4200 and 4400, (1000).

The base 2000 is detachably coupled to a power supply socket, and includes electrodes that are electrically connected to the socket. And also includes a male thread portion corresponding to the female thread portion of the socket, for example, for connection with the socket.

The light transmissive globe 3000 includes a front region and a rear region on the basis of the light emitting elements 1000 in accordance with the characteristics of the light emitting elements 1000 capable of emitting light not only forward but also backward, Is formed of a transparent material. The transparent globe 3000 includes a spherical portion 3200 as a whole and a neck portion 3400 integrally formed behind the spherical portion 3200 and coupled with the base.

The power supply leads 4200 and 4400 are installed upright in the base 2000 and extend to a space surrounded by the transparent glove 3000. The power supply leads 4200 and 4400 serve to firmly support the light emitting devices 1000 in addition to supplying power to the light emitting devices 1000, which will be described in detail below. The plurality of light emitting devices 1000 are connected in series while being bent. One lead 4200 of the leads 4200 and 4400 is connected to the power input terminal of the first light emitting device 1000 of the plurality of light emitting devices 1000 in series, 4400 are connected to the power supply side lead terminal of the last light emitting device 1000 arranged in series of the plurality of light emitting devices 1000. Each of the plurality of light emitting devices 1000 is connected to each other and to the leads 4200 and 4400 by external extension terminals 1001 and 1002 (see Figs. 2 to 5) protruding from one side and the other side, It can be connected and maintained in shape and can be supplied with power.

2 to 5, the light emitting device 1000 includes a non-conductive transparent substrate 1100 extending in the longitudinal direction, an input terminal 1210 disposed on one side of the non-conductive transparent substrate 1100, , An output terminal 1220 disposed on the other side of the non-conductive transparent substrate 1100, and n light emitting diodes (not shown) arranged on the non-conductive transparent substrate 1100 and each having an input end 1320 and an output end 1340, Chips 1300 and connection means 1400 for connecting the n light emitting diode chips 1300 in series on the non-conductive transparent substrate 1100. In addition, the light emitting device 1000 may be configured such that the light emitting diode chips 1300 and the light emitting diode chips 1300 are mounted on the non-conductive transparent member 1300 while permitting exposure of the external extended terminals 1001, And may further include an elongate translucent encapsulant 1500 that covers the substrate 1100. The transparent encapsulant 1500 may be formed by molding a transparent resin and may be formed by cooperating with at least some light emitting diode chips 1300 among the light emitting diode chips 1300, A wavelength converting material, such as a phosphor, may be included.

The connection unit 1400 is formed on the non-conductive transparent substrate 1100 so as to be transparent and conductive. The connection unit 1400 includes the input terminal 1210 and the first light emitting diode chip 1300 among the n light emitting diode chips 1300. A first conductive transparent connection part 1401 connecting between the input terminal 1320 of the first light emitting diode chip 1301 and the input terminal 1320 of the first light emitting diode chip 1301, a second conductive transparent connection portion 1402 connected to the input terminal 1320 of the second LED chip 1302 among the n LED chips 1300 and a second conductive transparent connection portion 1402 connected to the output terminal 1220 and the n LED chips An n + 1 conductive transparent connection portion 140n + 1 for connecting the output terminal 1340 of the n-th light emitting diode chip 130n among the nth light emitting diode chips 1300 and 13n, And an n-th conductive transparent connection part connected to the input terminal 1320 of the n-th light emitting diode chip 130n 140n. The connecting means 1400 includes intermediate conductive transparent connection portions 1403 connecting the adjacent two LED chips 1300 and 1300 among the n LED chips 1300.

As mentioned above, all the conductive transparent connection parts including the first conductive connection part, the second conductive transparent connection part, the nth conductive transparent connection part and the (n + 1) conductive transparent connection part are all spaced apart, Conductive thin film. This will be described in more detail below.

The non-conductive transparent substrate 1100 includes a flat upper surface and a lower surface, and is formed to be long in the longitudinal direction. The non-conductive transparent substrate 1100 is made of a non-conductive and transparent material such as transparent plastic, transparent glass, or transparent quartz. The input terminal 1210 is formed of a conductive metal material on one side of the upper surface of the non-conductive transparent substrate 1100, more specifically, on the upper surface of the non-conductive transparent substrate 1100 on one side. The output terminal 1220 is formed of a conductive metal material on the other side of the upper surface of the non-conductive transparent substrate 1100, more specifically, on the upper surface of the non-conductive transparent substrate 1100 on the other end side. Each of the input terminal 1210 and the output terminal 1220 is connected to each of the external extension terminals 1001 and 1002 protruding outside the non-conductive transparent substrate 1100 to form the leads 4200 and 4400 ).

A connecting means 1400 formed by forming a conductive transparent film in a predetermined pattern on the non-conductive transparent substrate 1100 before forming the input terminal 1210 and the output terminal 1220 is provided. The conductive transparent film pattern constituting the connection means 1400 may be formed by forming a conductive transparent film entirely on the upper surface of the non-conductive transparent substrate 1100 and etching it by using a mask, or by forming the conductive transparent film on the non-conductive transparent substrate 1100 And then forming a conductive transparent film on the mask in a predetermined pattern. As the conductive transparent film, a metal oxide film used as a transparent electrode such as ITO (Indium Tin Oxide) may be used. However, a metal material including at least one of Ni, Au, Pt, It is preferable that it is formed to be transparent.

The n light emitting diode chips 1300 are arrayed in a row on the top surface of the non-conductive transparent substrate 1100 between the input terminal 1210 and the output terminal 1220. Each of the n light emitting diode chips 1300 has an input terminal 1320 and an output terminal 1340. The input terminal 1320 and the output terminal 1340 are connected to the non- Or electrode pads 1321, 1341 and / or bumps 1322, 1342 extending toward the substrate 1100.

Each of the n light emitting diode chips 1300 is mounted on the non-conductive transparent substrate 1100 by flip-chip bonding. The non-conductive transparent substrate 1100 is mounted on the flip chip type light emitting diode chip, Is connected to the corresponding conductive transparent connection portion in the connection means 1400 previously formed of a conductive transparent film on the conductive transparent film 1400 to form an element of the series connection circuit. In this embodiment, since the conductive transparent connection portions 1401, 1402, 1403, ..., 140n or 140n + 1 connect between the first light emitting diode chip, the output terminal and the last light emitting diode chip and between the adjacent intermediate light emitting diode chips The bonding wires necessary for the series circuit connection of existing lateral type light emitting diode chips are not used.

Even if each LED chip 1300 is a flip chip type, the bottom surface of each LED chip 1300 and the non-conductive transparent substrate 1100 are not provided in the direction toward the non-conductive transparent substrate 1100, Since only the light transmitting area aa is empty except for the input end 1320 and the output end 1340, light can be emitted backward. More specifically, light directed forward with respect to the light emitting diode chip 1300 is emitted forward as it is,

The backward light is transmitted through the non-conductive transparent substrate 1100 and emitted backward. For example, light corresponding to 30% of the total amount of emitted light is emitted through the front side of the LED chip 1300 in which the sapphire substrate is located, and light corresponding to 70% of the total amount of emitted light is emitted from the non-conductive transparent substrate 1100 Lt; / RTI >

In this embodiment, each of the n light emitting diode chips 1300 includes a light transmitting substrate 1311, a first conductivity type semiconductor layer 1312, an active layer 1313, and a second conductivity type semiconductor layer 1314). A part of the region of the second conductivity type semiconductor layer 1314 is connected to the first electrode pad 1321 and a part of the first conductivity type semiconductor layer 1312 opened by the mesa etching is connected to the second electrode pad 1341 And a connected structure.

The transmissive substrate 1311 is a growth substrate used for growing the first conductivity type semiconductor layer 1312, the active layer 1313 and the second conductivity type semiconductor layer 1314, more preferably a transparent Sapphire substrate. The first conductive semiconductor layer 1312 and the second conductive semiconductor layer 1314 may be an n-type semiconductor layer and a p-type semiconductor layer, and the active layer 1313 may include a multi quantum well .

The first electrode pad 1321 and / or the second electrode pad 1341 are electrically connected to the conductive transparent connection portion 1401 (not shown) on the non-conductive transparent substrate 1100 by the first bump 1322 and the second bump 1342. [ , 1402, 1403, ..., 140n or 140n + 1.

The input terminal 1210 may include a metal base material 1211 including at least one of Ag, Au, Cu, and Al, and a reflective material layer coated on the base metal material. Similarly, the output terminal 1220 preferably includes a metal matrix including at least one of Ag, Au, Cu, and Al, and a reflective material layer coated on the metal matrix.

In order to manufacture the light emitting device 1000, a metal material including Ni, Au, Pt, Pd, or W is deposited to a thickness of 10 mu m or less on a previously prepared transparent non-conductive transparent substrate 1100, An oxide is deposited to form a conductive transparent film on the non-conductive transparent substrate 1100 and the conductive transparent film is etched to form a connection including the conductive transparent connections 1401, 1402, 1403, ..., 140n or 140n + The means 1400 is formed on the non-conductive transparent substrate 1100. Alternatively, a mask of a predetermined pattern may be formed on the non-conductive transparent substrate 1100 and a transparent metal oxide or a transparent metal may be deposited on the mask to form the conductive transparent connections 1401, 1402, 1403, ..., 140n or 140n + (1400). ≪ / RTI > An E-beam or sputtering process may be used to form the connecting means 1400.

Next, the light emitting diode chips 1300, the input terminal 1210 and the output terminal 1220 are electrically connected in series by the conductive transparent connection portions 1401, 1402, 1403, ..., 140n or 140n + 1, A process of arranging and forming on the transparent transparent substrate 1100 is performed. The input terminal 1210 and the input terminal 1320 of the first light emitting diode chip 1301 among the n light emitting diode chips 1300 are connected to the transparent conductive first conductive transparent connection portion 1401 And an output terminal 1340 of the first light emitting diode chip 1301 and an input terminal 1320 of the second light emitting diode chip 1302 of the n light emitting diode chips 1300 are connected by a transparent second conductivity And the output terminal 1220 and the output terminal 1340 of the nth light emitting diode chip 130n of the n light emitting diode chips 1300 are connected by a transparent connection part 1402. The output terminal 1320 of the n- And the transparent conductive n-conductive transparent connection portion 140n is connected to the input terminal 1320 of the n-th light emitting diode chip 130n by the transparent connection portion 140n + 1. Also, by the above process, the adjacent two light emitting diode chips 1300 and 1300 among the n light emitting diode chips 1300 are also connected by the conductive transparent connecting parts.

The first conductive transparent connection portion 1401 includes a portion corresponding to the input terminal 1210 and having a portion having a first width w1 and a portion having a second width w2 corresponding to an input end of the first light emitting diode chip 1301, . The n + 1 conductive transparent connection portion 140n + 1 corresponds to the output terminal 1220 and has a second width w2 corresponding to the portion having the first width w1 and the output terminal of the nth light emitting diode chip 130n. Lt; / RTI > In addition, the conductive transparent connections between the first conductive transparent connection part 1401 and the (n + 1) conductive transparent connection part 140n + 1 have a first width w2. The first width w1 is determined to be larger than the second width w2.

Each of the two external extension terminals 1001 and 1002 (see FIG. 1) is connected to the input terminal 1210 and the output terminal 1220, and protrudes to both left and right sides. The light-transmissive encapsulant encapsulating the non-conductive transparent substrate 1100 and the LED chips 1300 is molded in a state in which only two external extension terminals 1001 and 1002 (see FIG. 1) are exposed to the outside, The fabrication of the above-described light emitting device 1000 is completed. The light-transmissive encapsulant may include a wavelength conversion material, that is, a phosphor, which cooperates with the light emitting diode chip 1300 emitting blue or ultraviolet light to form white light. It is also contemplated to use a light emitting diode chip of at least one of the plurality of light emitting diode chips 1300 emitting a wavelength of 620 to 680 nm so as to convert the white light into warm white light.

6 is a partially enlarged cross-sectional view for explaining a filament type light emitting device according to another embodiment of the present invention.

6, the light emitting device 1000 according to the present embodiment includes a non-conductive transparent substrate 1100, a plurality of linearly arrayed bodies 1100 mounted on the non-conductive transparent substrate 1100, Flip chip type light emitting diode chips 1300 of FIG. The light emitting device 1000 may be formed on the non-conductive transparent substrate 1100 and may include adjacent flip chip type light emitting diode chips 1300 and one flip chip type light emitting diode chip 1300, And / or an electrically conductive transparent connection 1403 as part of the connection means for connecting the output terminal. The conductive transparent connection portion 1403 may be a metal oxide film such as ITO used as a transparent electrode or a metal film deposited with a fine thickness of 10 μm or less to ensure transparency.

Each of the flip chip type light emitting diode chips 1300 includes a transmissive substrate 1311, a first conductivity type semiconductor layer 1312, an active layer 1313, and a second conductivity type semiconductor layer 1313 in this order from top to bottom, (1314). A part of the region of the second conductivity type semiconductor layer 1314 is connected to the first electrode pad 1321 and a part of the first conductivity type semiconductor layer 1312 opened by the mesa etching is connected to the second electrode pad 1341 And a connected structure.

The first bump 1322 and the second bump 1342 are formed so that the first electrode pad 1321 and / or the second electrode pad 1341 are electrically connected to the conductive transparent connection portion 1403 ). The first bump 1322 and the first electrode pad 1321 of the flip chip light emitting diode chip 1300 constitute the input terminal 1320 and the second bump 1342 of the flip chip light emitting diode chip 1300 And the second electrode pad 1341 constitutes an output terminal 1340. Note that the input and output stages may be reversed.

In the light emitting device according to the previous embodiment, the light transmitting region is formed while the gap between the flip chip light emitting diode chip and the non-conductive transparent substrate is empty without a reflector. In contrast, in the light emitting device 1000 according to the present embodiment, the upper surface of the non-conductive transparent substrate 1100 formed with the conductive transparent connection portion 1403 intermittently spaced apart from the upper surface of the input terminal 1320 and the output terminal 1340, An empty space between the lower surfaces of the flip chip light emitting diode chips 1300 formed therein is filled with an insulating transparent material 1700 to form a light transmitting region. The insulating transparent material 1700 may be, for example, a transparent resin. The insulating transparent material 1700 may include a phosphor as a wavelength converting material. The light emitting device 1000 includes a transparent encapsulant 1500 provided in the form of a transparent molding material or a transparent tube and the transparent encapsulant 1500 may be a nonconductive transparent substrate formed with a conductive transparent connection part 1403 The plurality of flip chip light emitting diode chips 1300 mounted on the non-conductive transparent substrate 1000 are electrically connected by the conductive transparent connection portions 1430 and the conductive transparent connection portions 1430. The plurality of flip chip type light emitting diode chips 1300 includes a light emitting diode chip of blue or ultraviolet wavelength band which forms white light together with the phosphor included in the insulating transparent material 1700 and / or the translucent encapsulant 1500. Also, at least one of the plurality of flip chip type light emitting diode chips 1300 may be a light emitting diode chip having a wavelength of 620 to 680 nm, and a light emitting diode chip having a wavelength of 620 to 680 nm contributes to the implementation of warm white light.

7 is a side cross-sectional view partially showing a filament type light emitting device according to another embodiment of the present invention.

7, the filament type light emitting device 1000 according to the present embodiment includes a plurality of conductive transparent connection parts 1403 each formed of ITO, and each conductive transparent connection part 1403 made of ITO Or the output terminal 1340 on the ITO transparent connection portion 1403 in order to increase the bonding force between the bump 1322 of the input terminal 1320 and the bump 1322 of the input terminal 1320 or the bump 1342 of the output terminal 1340, An additional opaque metal electrode layer 1404 that is in direct contact with the bumps 1322 or 1422 is limitedly contained between the bump 1322 or 1422 and the ITO transparent connection 1403. [ The remaining configuration is the same as or similar to that of the previous embodiment, and a detailed description thereof will be omitted.

1000: light emitting element 1100: non-conductive transparent substrate
1210: Input terminal 1220: Output terminal
1300, 1301, 1302, 130n: light emitting diode chip
1400: connecting means 1500: translucent encapsulant
1401, 1402, 1403, 140n, 140n + 1: conductive transparent connection
aa: light transmitting region 1700: insulating transparent material

Claims (21)

A non-conductive transparent substrate;
At least one light emitting diode chip mounted on an upper surface of the non-conductive transparent substrate and including an input end and an output end extending toward the non-conductive transparent substrate; And
Conductive transparent connection portions formed on the upper surface of the non-conductive transparent substrate and electrically connected to the input end and the output end,
And a light transmitting region is provided between the non-conductive transparent substrate and the LED chip around the input terminal and the output terminal so that light from the LED chip is emitted backward through the light transmitting region and the non-conductive transparent substrate Emitting element. The light emitting device of claim 1, wherein the input terminal and the output terminal include electrode pads and bumps extending from the light emitting diode chips toward the non-conductive transparent substrate. The light emitting device of claim 1, wherein the light transmitting region is formed by filling an insulating transparent material into an empty space between the non-conductive transparent substrate and the light emitting diode chip. The light emitting device according to claim 3, wherein the insulating transparent material includes a phosphor. The light emitting device according to claim 1, further comprising a transparent encapsulant for encapsulating the non-conductive transparent substrate and the LED chip. The light emitting device of claim 5, further comprising a pair of external extension terminals electrically connected to the light emitting diode chip and protruding outward from both ends of the translucent encapsulant. The method of claim 1, wherein the one or more light emitting diode chips comprise n light emitting diode chips arrayed on the non-conductive transparent substrate, wherein the conductive transparent connections connect the n light emitting diode chips on the non- Emitting element. [7] The display device of claim 7, wherein an input terminal and an output terminal are formed on one side of the upper surface and the other side of the upper surface of the non-conductive transparent substrate, and the n light emitting diode chips are connected in series between the input terminal and the output terminal To the light emitting element. [Claim 9] The light emitting device of claim 8, wherein the conductive transparent connection parts include a first conductive transparent connection part connecting the input terminal and the input end of the first LED chip among the n light emitting diode chips. [Claim 9] The light emitting device of claim 9, wherein the conductive transparent connection parts further include a second conductive transparent connection part spaced apart from the first conductive connection part and connected to an output terminal of the first light emitting diode chip. [Claim 11] The light emitting device of claim 10, wherein the second conductive transparent connection part is connected to the input terminal of the second light emitting diode chip among the n light emitting diode chips. [Claim 9] The light emitting device of claim 8, wherein the conductive transparent connection parts include an n + 1 conductive transparent connection part connecting the output terminal and an output terminal of the nth light emitting diode chip among the n light emitting diode chips. The light emitting device of claim 12, wherein the conductive transparent connection parts further include an n-th conductive transparent connection part spaced apart from the (n + 1) conductive transparent connection part and connected to the input terminal of the nth light emitting diode chip. The light emitting device of claim 1, wherein the conductive transparent connecting parts are made of a metal oxide. [4] The light emitting device of claim 1, wherein the conductive transparent connection parts are formed on the non-conductive transparent substrate with a thickness of 10 [mu] m or less, and the metal material including at least one of Ni, Au, Pt, Pd and W is transparent. The light emitting device of claim 1, wherein the conductive transparent connection portions are formed of ITO. 17. The light emitting device according to claim 16, wherein a metal electrode layer is interposed between the conductive transparent connecting portion and the bumps of the input terminal or the output terminal. The light emitting device of claim 1, wherein the amount of light emitted through the non-conductive transparent substrate is greater than the amount of light emitted toward the opposite side of the non-conductive transparent substrate. Base;
A translucent globe coupled to the base;
Leads connected to the base in the transparent globe; And
And at least one light emitting element connected to the leads and being supplied with power through the leads and emitting light forward and backward,
Wherein the light emitting device comprises: a non-conductive transparent substrate; at least one light emitting diode chip mounted on an upper surface of the non-conductive transparent substrate and including an input end and an output end extending toward the non-conductive transparent substrate; And a conductive transparent connection portion formed in advance and electrically connected to the input end and the output end, wherein a light transmitting region is provided around the input end and the output end between the non-conductive transparent substrate and the light emitting diode chip, Is emitted backward through the light transmission region and the non-conductive transparent substrate. The light emitting bulb according to claim 19, wherein the input end and the output end include electrode pads and bumps extending from the light emitting diode chips toward the non-conductive transparent substrate, 21. The light emission bulb according to claim 19, wherein the light transmitting region is formed by filling an insulating transparent material into an empty space between the non-conductive transparent substrate and the light emitting diode chip.
KR1020160047638A 2016-04-19 2016-04-19 light emitting device and light emitting bulb comprising the same KR20170119513A (en)

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KR1020160047638A KR20170119513A (en) 2016-04-19 2016-04-19 light emitting device and light emitting bulb comprising the same
US15/335,231 US10109775B2 (en) 2016-04-19 2016-10-26 Light emitting devices and light emitting bulbs including the same
US16/127,616 US10234088B2 (en) 2016-04-19 2018-09-11 Light emitting devices and light emitting bulbs including the same
US16/260,657 US10487996B2 (en) 2016-04-19 2019-01-29 Light emitting devices and light emitting bulbs including the same

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190128870A (en) * 2018-05-09 2019-11-19 삼성전자주식회사 Led device and led lamp using the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190128870A (en) * 2018-05-09 2019-11-19 삼성전자주식회사 Led device and led lamp using the same

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