KR20170113179A - Substrate transfer apparatus and substrate transfer method - Google Patents

Abstract

In the substrate transfer apparatus for sucking and transferring a substrate, it is highly accurate to detect the abnormal transfer of the substrate.
A substrate holding portion having a suction hole for sucking and holding the substrate, a moving mechanism for moving the substrate holding portion, a pressure detecting portion for detecting a pressure of the suction passage communicating with the suction hole, And a control section for detecting an abnormality of conveyance based on the differential value of the pressure detection value. By acquiring the differential value in this way, it is possible to grasp the change in the pressure of the suction path with high accuracy, so that the abnormality of the conveyance of the substrate can be detected with high accuracy.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a substrate transfer apparatus,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate transfer apparatus and a substrate transfer method provided with a substrate holding section for sucking and transferring a substrate.

In a semiconductor manufacturing apparatus for manufacturing a semiconductor device, a plurality of modules on which semiconductor wafers (hereinafter, referred to as wafers) are mounted are provided, and the substrate transfer apparatus is incorporated as a substrate transfer mechanism. The wafers carried into the semiconductor manufacturing apparatus in the state of being stored in the carrier are taken out of the carrier by the substrate transport mechanism and transported between the modules.

As the module, there are a processing module for performing processing on a wafer and a transfer module in which a wafer is temporarily loaded to transfer the transfer between the processing modules. The substrate transport mechanism transports the wafers in a predetermined order, A predetermined series of processing is performed. The substrate transport mechanism has a base that can be raised and lowered, and a holding portion for holding a wafer that can be moved forward and backward in the base. As described in Patent Document 1, a suction hole for sucking a wafer may be formed in the holding portion. Patent Document 2 also discloses a transport mechanism that vacuum-adsorbs a wafer, holds it, and transports the wafer.

Japanese Patent Application Laid-Open No. 2014-36175 Japanese Patent Application Laid-Open No. 2005-277016

By monitoring the presence or absence of transfer of wafers in the above semiconductor manufacturing apparatus, it is examined to prevent the occurrence of various problems such as falling of the wafer from the holding portion and scattering of fragments of the cracked wafer have. In the above-described Patent Document 1, when the presence or absence of an abnormality in the ascending / descending operation of the substrate transporting mechanism is detected, by switching the on / off of the digital signal outputted from the pressure sensor provided on the exhaust pipe connected to the above- It is described that the timing of holding the wafer is detected.

However, the exhaust flow rate of the exhaust pipe varies depending on the damping of the power supplied to the apparatus, and the presence or absence of adsorption of the wafer in each holding portion when the plurality of holding portions share the downstream side of the exhaust pipe. That is, the adsorption state of the retention portion of the wafer may not be accurately reflected in the digital signal from the pressure sensor. Therefore, there is a demand for a technique capable of monitoring the presence or absence of conveyance with higher precision. Patent Document 2 discloses that the abnormality of the apparatus is detected by monitoring the pressure value detected by the pressure sensor provided on the suction path for adsorbing the wafer. However, as described in the embodiments of the present invention, Since the same detection value includes a noise component, it is difficult to detect the abnormality of conveyance with high accuracy.

SUMMARY OF THE INVENTION The present invention has been made in view of such circumstances, and an object of the present invention is to provide a substrate transfer apparatus for sucking and transferring a substrate, capable of highly accurately detecting substrate transfer.

A substrate transfer apparatus of the present invention comprises a substrate holding portion having a suction hole for sucking and holding a substrate,

A moving mechanism for moving the substrate holding portion,

A pressure detecting section for detecting a pressure of the suction passage communicating with the suction hole,

And a control unit for detecting an abnormality in conveyance of the substrate based on the differential value of the pressure detection value of the pressure detection unit.

The substrate transporting method of the present invention comprises the steps of sucking a substrate by a suction hole and holding the substrate by the substrate holding portion,

A step of moving the substrate holding portion holding the substrate by a moving mechanism;

A step of detecting the pressure of the suction passage communicating with the suction hole by the pressure detecting section,

And a step of detecting an abnormality in conveyance of the substrate based on the differential value of the pressure detection value of the pressure detection unit.

According to the present invention, an abnormality of conveyance is detected on the basis of the differential value of the pressure detected value of the suction passage communicated with the suction hole for sucking and holding the substrate. By acquiring the differential value in this way, it is possible to grasp the change in the pressure of the suction path with high accuracy, so that the abnormality of the conveyance of the substrate can be detected with high accuracy.

1 is a plan view of a coating and developing apparatus to which the present invention is applied.
2 is a longitudinal side view of the coating and developing apparatus.
3 is a plan view of a transfer arm according to the present invention installed in the coating and developing apparatus.
4 is a longitudinal side view of the carrying arm.
5 is a plan view of another transfer arm installed in the coating and developing apparatus.
6 is a schematic configuration view of a foreign substance removing unit installed in the coating and developing apparatus.
7 is a schematic configuration view of the foreign substance removing unit.
8 is a schematic configuration view of the foreign substance removing unit.
9 is a chart showing data on the exhaust pressure obtained at the time of normal transportation;
Fig. 10 is an explanatory view showing the operation of the carrier arm during normal transportation; Fig.
11 is a configuration diagram of a control unit installed in the coating and developing apparatus.
FIG. 12 is an explanatory view showing the operation of the transfer arm at the time of an abnormal transfer; FIG.
Fig. 13 is an explanatory view showing the operation of the transfer arm at the time of an abnormal transfer. Fig.
Fig. 14 is an explanatory view showing the operation of the above-described transfer arm at the time of abnormal transfer; Fig.
Fig. 15 is an explanatory view showing the operation of the above-mentioned transfer arm at the time of the abnormal transfer. Fig.
Fig. 16 is a chart showing data on the exhaust pressure of the exhaust pipe at the time of carrying over. Fig.
Fig. 17 is an explanatory view showing the operation of the carrying arm at the time of an abnormal transfer. Fig.
Fig. 18 is an explanatory view showing the operation of the carrier arm in the abnormal transfer. Fig.
Fig. 19 is an explanatory view showing the operation of the carrying arm at the time of carrying over.
FIG. 20 is an explanatory view showing the operation of the transfer arm at the time of an abnormal transfer. FIG.
Fig. 21 is a chart showing data on the exhaust pressure of the exhaust pipe at the time of an abnormal conveyance; Fig.
Fig. 22 is an explanatory view showing the operation of the carrier arm in the case of abnormal transport; Fig.
Fig. 23 is an explanatory view showing the operation of the carrying arm at the time of an abnormal transfer. Fig.
Fig. 24 is an explanatory view showing the operation of the carrier arm in the case of abnormal transport; Fig.
Fig. 25 is an explanatory view showing the operation of the transfer arm in the abnormal transfer. Fig.
Fig. 26 is an explanatory view showing the operation of the carrier arm in the abnormal transfer. Fig.
Fig. 27 is a chart showing data on the exhaust pressure of the exhaust pipe at the time of conveyance equal to or more than the above. Fig.
Fig. 28 is an explanatory view showing the operation of the transfer arm at the time of an abnormal transfer; Fig.
Fig. 29 is an explanatory view showing the operation of the transfer arm at the time of an abnormal transfer. Fig.
FIG. 30 is an explanatory view showing the operation of the above-mentioned transfer arm at the time of an abnormal transfer; FIG.
Fig. 31 is a chart showing data on the exhaust pressure of the exhaust pipe at the time of carrying over. Fig.
Fig. 32 is an explanatory view showing the operation of the carrying arm at the time of an abnormal transfer. Fig.
Fig. 33 is a chart showing data on the exhaust pressure of the exhaust pipe at the time of the abnormal conveyance; Fig.
34 is a chart showing a procedure for estimating the above types and performing a coping action.
Fig. 35 is an explanatory view showing the operation of the carrying arm at the time of an abnormal transfer. Fig.
Fig. 36 is an explanatory view showing the operation of the carrying arm at the time of an abnormal transfer; Fig.
Fig. 37 is an explanatory diagram showing data acquired based on the exhaust pressure during normal transportation; Fig.
Fig. 38 is an explanatory diagram showing data acquired based on the exhaust pressure at the time of abnormal conveyance; Fig.
39 is a schematic structural view of another foreign material removing unit;
40 is a schematic structural view of another foreign substance removing unit;
41 is a perspective view of a carrying arm provided with a wafer position detecting mechanism;
Fig. 42 is an explanatory view showing the operation of the carrying arm in the abnormal transfer. Fig.
FIG. 43 is an explanatory view showing the operation of the above-described transfer arm at the time of an abnormal transfer; FIG.
44 is a graph showing the operation of the transfer arm;
45 is a graph showing the operation of the transfer arm;

(Configuration of coating and developing apparatus)

The coating and developing apparatus 1 to which the substrate transfer apparatus of the present invention is applied will be described with reference to a plan view of FIG. 1 and a schematic longitudinal side view of FIG. The coating and developing apparatus 1 is constituted by connecting a carrier block D1, a processing block D2 and an interface block D3 in a straight line. An exposure unit D4 is connected to the interface block D3. Hereinafter, each block D will be described with the carrier block D1 side on the front side and the interface block D3 side on the rear side.

A carrier C for storing the wafer W is conveyed from the outside of the coating and developing apparatus 1 to the carrier block D1. The carrier block D1 includes a carrier 11 for carrying a carrier C, an opening / closing part 12, and a carrier arm 2 for transporting the wafer W to / from the carrier C via the opening / closing part 12.

The processing block D2 is constituted by laminating the first to sixth unit blocks E1 to E6 for performing the liquid processing on the wafer W in order from the bottom. E1 and E2 are the same unit block, E3 and E4 are the same unit block, and E5 and E6 are the same unit block. Of the two identical unit blocks, the wafer W is transferred to one unit block.

Here, the unit block E1 shown in Fig. 1 will be described as a representative unit block. An antireflection film forming module 14 is provided on one side of the carrying region 13 on the right and left sides of the carrying region 13 for supplying a chemical solution to the wafer W to form an antireflection film have. On the other side of the carrying region 13, a plurality of heating modules 15 including a heating plate for heating the stacked wafers W are provided forward and backward along the carrying region 13. In the transfer region 13, a transfer arm F1 for transferring the wafer W in the unit block E1 is provided.

The unit blocks E3 to E6 are different from the unit blocks E1 and E2. The unit blocks E3 and E4 are provided with a resist film forming module instead of the anti-reflection film forming module 14. The resist film forming module supplies a resist as a chemical liquid to form a resist film on the wafer W. The unit blocks E5 and E6 are provided with a developing module instead of the anti-reflection film forming module 14. [ The developing module supplies the developing solution to the wafer W as a chemical liquid. The unit blocks E1 to E6 are configured similarly to each other, except that the type of the chemical solution of the module for supplying the chemical liquid is different. In Fig. 2, the transfer arms of the unit blocks E2 to E6 corresponding to the transfer arm F1 are shown as F2 to F6, and F1 to F6 are configured similarly to each other.

On the side of the carrier block D1 in the processing block D2, there are provided a tower T1 composed of a plurality of modules stacked vertically and extending vertically from one unit block E1 to E6, and a module The transfer arm 3 is provided. In the tower T1, for example, a transmission module TRS is installed at each height at which the unit blocks E1 to E6 are installed.

In the tower T1, a hydrophobization processing module 16 and a plurality of temperature regulation modules SCPL are provided. Like the heating module 15, the hydrophobization processing module 16 includes a heating plate for heating and heating the wafer W, and supplies the processing gas to the surface of the wafer W placed on the heating plate 15 for hydrophobic treatment. The temperature regulation module SCPL is provided with a loading section for adjusting the temperature of the loaded wafer W to, for example, 23 占 폚. Further, a foreign matter removing unit 4 is provided in the tower T1. The foreign matter removing unit 4 will be described later in detail.

The interface block D3 includes towers T2, T3, and T4 extending up and down over the unit blocks E1 to E6, and includes a transfer arm 17 for transferring the wafer W to the towers T2 and T3, A transfer arm 18 for transferring the wafer W to the T2 and the tower T4, and a transfer arm 19 for transferring the wafer W between the tower T2 and the exposure device D4. In the tower T2, a transfer module TRS for transferring the wafer W to each unit block is stacked. Although the modules are also installed in the towers T3 and T4, the description of these modules is omitted.

(Construction of transfer arm)

Each of the above-mentioned transfer arms is a substrate transfer device incorporated in the developing apparatus 1 which is coated as a substrate transfer mechanism. 3 and the longitudinal side view of Fig. 4, the carrying arm 2 of the carrier block D1 includes a base 21 and a fork (not shown) provided on the base 21. [ 22). The base 21 can move the fork 22 between the retracted position (the position shown in Figs. 3 and 4) and the advanced position. The base 21 is connected to a driving mechanism (not shown) so as to be capable of moving left and right, moving up and down, and rotating around a vertical axis. The driving mechanism and the base 21 constitute a moving mechanism for moving the fork 22 which is the substrate holding portion.

The fork 22 is formed in a horizontal plate shape in which the advancing direction side extends in two fork. Three flat circular pads 23 are provided on the surface of the fork 22 and a suction hole 24 is formed in the surface of each pad 23. The wafers W loaded on the pads 23 to close these suction holes 24 are sucked and horizontally adsorbed and held on the forks 22 as indicated by chain lines in the figure. An exhaust passage 25 is provided in the fork 22. The downstream side of the exhaust passage 25 communicates with the exhaust pipe 26 connected to the fork 22. The exhaust pipe 25 is connected to the exhaust pipe 26, The downstream side of the exhaust pipe 26 constituting the suction path (exhaust path) is connected to an exhaust mechanism 27 including, for example, a valve, an exhaust blower, and the like. 24 can be switched between a state where suction is performed from the suction hole 24 and a state where suction from the suction hole 24 is not performed.

An exhaust pressure sensor (pressure sensor) 28 is provided upstream of the exhaust mechanism 27 in the exhaust pipe 26 and outputs an analog signal corresponding to the pressure (exhaust pressure) in the exhaust pipe 26 . The control unit 5 shown in Fig. 3 is a computer installed to control the operation of each part of the coating and developing apparatus 1, and converts the output signal from the exhaust pressure sensor 28, which is the pressure detecting unit, into a digital signal For example, 2.5 milliseconds, through a converter (not shown). The acquisition interval of this signal is not limited to this example, but it is preferable that the interval is 10 milliseconds or less, for example, in order to detect an abnormality with high accuracy as described later. The detailed configuration of the control unit 5 will be described later.

Next, with respect to the carrying arm F1, the difference from the carrying arm 2 will be described with reference to a plan view of Fig. The fork 22 of the transfer arm F1 is configured to extend in the forward direction side so as to surround the periphery of the side surface of the wafer W and four claw portions 29 on which the peripheral edge portion of the wafer W thus enclosed is mounted Is installed. In the carrying arm F1, a pad 23 provided with a suction hole 24 is provided on the surface (upper surface) of the pawl portion 29.

Further, two forks 22 are provided on the base 21 of the transfer arms F (F1 to F6) in the vertical direction, and these forks 22 are moved forward and backward independently of each other. Fig. 5 shows a state in which one fork 22 is positioned at the advancing position and the other fork is positioned at the retracted position. Except for these differences, the transfer arms F (F1 to F6) are configured similarly to the transfer arm 2. The transfer arm 3 is configured similarly to the transfer arms F (F1 to F6) except that only one fork 22 is provided.

(For modules and carriers)

The module indicates a unit in the coating and developing apparatus 1 having a loading section on which the wafer W is loaded by each of the transfer arms. The loading section constituting each module is configured so as not to interfere with the fork 22 so that the transfer of the wafer W can be performed by the lifting operation of the fork 22 of the transfer arm that accesses the loading section . The carrier C is also provided with a loading section for transferring the wafer W by the elevating operation of the fork 22, and this loading section is indicated as C1 in Fig.

(Structure and operation of the foreign object removing unit)

Next, the foreign matter removing unit 4, which is a foreign matter removing unit installed in the tower T1, will be described with reference to FIG. The foreign matter removing unit 4 has a role of removing foreign matter P adhered to the pad 23 of the transfer arm 2 when an abnormality of the transfer arm 2 is estimated as will be described later. The foreign matter removing unit 4 includes three vertical pins 41, a support portion 42 for supporting the lower ends of the pins 41, a rotation mechanism 43 for rotating the support portion 42 around the vertical axis, And a disk 44 supported at the distal end of each pin 41. The disk 44 is detachable from the pin 41 and is transferred to the pad 23 of the transfer arm 2. For example, an adhesive material is formed on the back surface of the disk 44 so that foreign matter P adhering to the pad 23 can be absorbed and removed. Concretely, for example, a plurality of films made of a resin constituted by the adhesive material are stacked and formed on the back surface of the disk 44, and the film on the surface layer in the laminated film constitutes an adhesive surface for adsorbing foreign matters P. do. When the disc 44 is used to deteriorate the adhesion of the film on the surface layer, the film can be peeled off and the lower layer film can be exposed as a new adhesive surface.

7 and 8, the base 21 is lifted and lowered in a state in which the fork 22 is located at the forward position, so that the pad 23 of the fork 22 and the pin 23 of the foreign material removing unit 4 41, the transfer of the disk 44 is performed, for example, a plurality of times. Further, as shown in Fig. 8, the pin 41 is rotated by the rotating mechanism 43 every time the disk 44 is received by the pin 41 in the plural times of delivery. Thereby, the fork 22 receives the disk 44 in the other direction every time. That is, at the time of delivery, the pad 23 contacts the other position of the disk 44, so that the foreign matter P adhered to the pad 23 is attracted to and removed from the disk 44 more reliably.

(Description of conveying path in coating and developing apparatus)

The wafer W is conveyed from the carrier C to the transfer module TRS0 of the tower T1 by the transfer arm 2 and transferred to the transfer arm 3 To the hydrophobization processing module 16 of the tower T1 and subjected to hydrophobic processing. Thereafter, the wafer W is conveyed to the temperature regulation module SCPL and cooled, and is distributed to the unit blocks E1 and E2 for transportation. For example, when transferring the wafer W to the unit block E1, the transfer module TRS1 (transfer module capable of transferring the wafer W by the transfer arm F1) corresponding to the unit block E1 among the transfer modules TRS of the tower T1, W is transmitted. When transferring the wafer W to the unit block E2, the wafer W is transferred to the transfer module TRS2 corresponding to the unit block E2 among the transfer modules TRS of the tower T1. The transfer of the wafer W is carried out by the transfer arm 3.

The wafer W thus distributed is transported in the order of TRS1 (TRS2) - > antireflection film forming module 14 - > heating module 15 - TRS1 (TRS2) by the transport arm F1 (F2) To the transfer module TRS3 corresponding to the unit block E3 and to the transfer module TRS4 corresponding to the unit block E4. The wafer W distributed to TRS3 and TRS4 is transported in the order of TRS3 (TRS4) -> resist film forming module -> heating module 15 -> transfer module TRS31 (TRS41) of the tower T2 by the transport arm F3 (F4) . Thereafter, the wafer W is transferred to the exposure apparatus D4 by the transfer arms 17 and 19, and the resist film formed on the surface of the wafer W is exposed in accordance with a predetermined pattern.

The exposed wafer W is transported between the towers T2 and T4 by the transport arms 18 and 19 and transported to the transport modules TRS51 and TRS61 of the tower T2 corresponding to the unit blocks E5 and E6, respectively. Thereafter, the wafer W is transferred in the order of the heating module 15 → developing module, and the resist film is dissolved in accordance with the pattern exposed by the exposure device D4, and a resist pattern is formed on the wafer W. Thereafter, the wafer W is transferred to the transfer module TRS5 (TRS6) of the tower T1, and then returned to the carrier C through the transfer arm 2.

(Description of normal transfer operation of the transfer arm)

The operation of each part of the transfer arm 2 when the wafer W is transferred from the loading section C1 of the carrier C to the transfer module TRS0 in the transfer path and the operation of each part of the transfer arm 2 when the output signal An example of the time series data of the exhaust pressure acquired by the control unit 5 on the basis of the time series data is described with reference to Figs. 9 and 10. Fig. In the transport in the description of Figs. 9 and 10, it is assumed that the abnormality as described later does not occur, and the wafer W is normally transported.

9 is a timing chart showing the above-described time series data. The abscissa of the chart indicates elapsed time (unit: millisecond) in which the time when the base 21 is located at the predetermined setting position for receiving the wafer W is set to 0 seconds. The vertical axis of the chart indicates the exhaust pressure (unit: 인), which is the pressure detection value of the suction passage detected based on the detection signal from the exhaust pressure sensor 28. [ Arrows A1 to A7 in the chart indicate respective operations of the arms indicated by A1 to A7 in Fig. 10 and the respective figures described later, when the transfer of the wafer W between the loading section C1 of the carrier C and the transfer arm 2 is indicated, for the sake of convenience, the loading section C1 is viewed from the front And the transfer arm 2 is shown in the state of being viewed along the lateral direction of the apparatus, respectively.

First, when the fork 22 is positioned at the retracted position and the suction from the suction hole 24 is stopped, the fork 22 is moved to the forward position on the base 21 located at the set position And is located below the wafer W to be loaded on the loading section C1 (operation A1). Subsequently, exhaust from the suction hole 24 is started (at time t1 in the chart), and the detected exhaust pressure is substantially constant after being abruptly lowered. Thereafter, when the fork 22 is lifted and the wafer W is loaded on the pad 23 of the fork 22 and the suction hole 24 is closed, the evacuation pressure drops sharply (time t2). After the fork 22 continues to rise (action A2), the fork 22 moves to the retracted position (act A3). With respect to the exhaust pressure, the descending gradually becomes gentle, and thereafter changes approximately constantly.

Thereafter, when the base 21 also moves up and down in the lateral direction (operation A4) and stops at a predetermined delivery position for delivering the wafer W to the transfer module TRS0, which is the transfer destination of the wafer W, And is located above the transfer module TRS0 (operation A5). Subsequently, the exhaust in the suction hole 24 is stopped, and the exhaust pressure rises (time t3). Then, the base 21 is lowered, and the wafer W is loaded (transferred) to the transfer module TRS0. The lowering of the fork 22 is continued (operation A6) after the wafer W is delivered to the transfer module TRS0. Thereafter, the downward movement is stopped and the fork 22 is moved to the retreat position (operation A7).

The transfer of the wafer W between the modules and the transfer of the wafer W from the module to the carrier C are also performed by performing the operations described in A1 to A7 in the respective transfer arms All. Further, when each conveyance is normally performed, the time series data of the exhaust pressure similar to that described with reference to Fig. 9 is obtained.

(Explanation of the control unit 5)

By the way, the control unit 5 performs arithmetic processing on the acquired time series data of the exhaust pressure, and acquires the time series data of the differential value. The time series data of this differential value will be described. In the time series data of the exhaust pressure, the exhaust pressure acquired 2.5 milliseconds before one elapsed time is subtracted from the exhaust pressure acquired in one elapsed time, And becomes a differential value in time. That is, (exhaust pressure acquired at an arbitrary time) - (exhaust pressure acquired immediately before an arbitrary time) is calculated and acquired as a differential value. This differential value is obtained for each elapsed time obtained from the exhaust pressure. That is, the differential value of the exhaust gas pressure is obtained every 2.5 milliseconds, and these differential values become time series data of differential values.

9 shows an example of the time series data of the exhaust pressure at which the change of the exhaust pressure in the exhaust pipe 26 can be easily grasped for the sake of explanation. However, for example, when the exhaust gas is exhausted from the exhaust mechanism 27 are unstable, the exhaust pressure in the exhaust pipe 26 fluctuates. As a result, noise may be included in the waveform of the time series data of the exhaust pressure. Even in such a case, by obtaining the time series data of the differential value, the noise is canceled, and the change in the pressure in the exhaust pipe 26 at each time can be grasped with high accuracy. That is, the time-series data of the differential value reflects the change in the exhaust pressure in the exhaust pipe 26 with high accuracy.

When an abnormality occurs during the transportation of the wafer W, the time series data of the exhaust pressure acquired by the control unit 5 is a waveform different from the example shown in FIG. 9, and the time series data of the exhaust pressure acquired from the time series data The time series data of the derivative values correspond to the above-described types. Based on the time series data of the differential value, the control unit 5 can detect the abnormality of the conveyance and estimate the type of the generated or abnormal. In addition, the control unit 5 controls the operation of each transport arm so that a coping operation corresponding to the estimated type or more is performed. The acquisition of the time series data of the exhaust pressure and the acquisition of the time series data of the differential values are carried out at all times during the operation of the coating and developing apparatus 1, for example.

Fig. 11 shows the configuration of the control unit 5. In Fig. The control unit 5 is provided with a program 51. [ The program 51 is a program for carrying the wafer W along the conveyance path, processing the wafer W in each module, acquiring the output signal from the exhaust pressure sensor 28, time series data of the exhaust pressure based on the output signal, (Group of steps) so as to be able to execute generation of time-series data of the value, estimation of the type of the conveyance or the like based on the time-series data of the differential value, and coping action according to the estimated or abnormal type. Then, by the program 51, a control signal is transmitted to each section of the coating and developing apparatus 1, whereby the operation of each section of the coating and developing apparatus 1 is controlled. The program is stored in a program storage unit (not shown) provided in the control unit 5 and is stored in a storage medium such as a hard disk, a compact disk, a magneto-optical disk, or a memory card.

The control unit 5 is also provided with a memory 52. When the abnormality of the wafer W to be described later is estimated as the above-mentioned type, the memory 52 stores information such as the number of the lot to which the wafer W for specifying the estimated wafer W belongs and the number in the lot . An alarm output unit 53 is connected to the control unit 5. The alarm output unit 53 is constituted by a monitor, a speaker, and the like, receives a control signal, and performs predetermined image display and audio output as an alarm.

Hereinafter, the state of the wafer W at the time of occurrence of an abnormality, the time series data of the exhaust pressure at the time of occurrence of an abnormality, the time series data of the differential value, and the coping operation will be described in detail for each type of abnormality.

(Above type 1: attachment of wafer)

When the transfer arm receives the wafer W from the loading portion of the carrier C or the module, the wafer W is attached to the loading portion by adhering substances such as a chemical solution adhered to the back surface of the wafer W or a film formed so as to go back to the back surface . In other words, this attachment is an abnormality in loading in the carrying section of the transfer source of the wafer W.

The operation of the transfer arm 2 when receiving the wafer W thus adhered from the loading section C1 of the carrier C and the state of the received wafer W will be described with reference to the schematic diagrams of Figs. 12 to 15. Fig.

The operations A1 and A2 described in Fig. 10 are performed so that the pad 23 of the fork 22 picks up the wafer W and the suction hole 24 of the pad 23 is closed by the wafer W, The wafer W attached to C1 is separated from the loading portion C1. Due to the separated momentum, the wafer W jumps out from the pad 23, and is brought into a vibrating state. When the wafer W is brought into the state as described above, the suction holes 24 of the pads 23 are opened (Figs. 12 and 13).

The graph on the upper side of Fig. 16 shows the time series data of the exhaust pressure obtained in this case by the waveform of the solid line. The abscissa and ordinate axes of this graph show the elapsed time since the base 21 is set at the predetermined setting position and the detected exhaust pressure in the same manner as the graph of Fig. 9, respectively. As described above, since the wafer W is attracted to the pad 23 and then separated from the pad 23, the evacuation pressure rises after descending. For comparison, in the graph on the upper side of Fig. 16, the waveform of the time series data of the exhaust pressure obtained at the time of normal conveyance shown in Fig. 9 is indicated by a dotted line, and the time- In the graph, the waveform of the time series data of the normal exhaust pressure is indicated by a dotted line similarly to the graph on the upper side in Fig.

In the graph on the lower side of Fig. 16, the time series data of differential values obtained from the time series data of the exhaust pressure indicated by the solid line in the upper graph is shown by the solid line waveform. 16, the horizontal axis represents the elapsed time in the same manner as the horizontal axis of the graph on the upper side, and the vertical axis represents the above-described differential value (unit:.). Describing this waveform, the wafer W is attracted to the pad 23 and the exhaust pressure falls, so that the differential value decreases. Thereafter, the exhaust pressure is stabilized by the stabilization of the exhaust pressure, and becomes almost zero as before the decrease due to adsorption. Thereafter, the pressure in the exhaust pipe 26 rises suddenly by the slit of the wafer W, so that the differential value rises and a relatively large peak appears in the waveform.

For comparison, the graph on the lower side of Fig. 16 shows the waveform of the time-series data of the derivative value obtained from the time-series data of the exhaust pressure obtained at the time of normal transportation of the graph on the upper side of Fig. 16 as a dotted line. In the time-series data of the differential value acquired at the time of this normal transportation, the peak of the waveform due to the abrupt rise of the differential value after the adsorption of the wafer W is not seen. In addition, also in the graphs of the respective figures, which will be described later with respect to the time series data of the differential values, waveforms of the time series data of the differential values obtained from the time series data of the normal exhaust pressure are shown by dotted lines similarly to the graph on the lower side of FIG. 16 .

Since a peak appears in the waveform when an abnormality occurs as described above, the range of the peak of the waveform in which the pulse is expected to occur in the time period in which the above-mentioned pulse is expected to occur is set in advance, The abnormality of the wafer W can be detected from the time-series data of the time series data of the wafer W, and it can be estimated that the abnormality is attributable to the adhesion. In addition, since the sticking of the wafer W occurs due to the sticking, the sticking abnormality can be said to be the abnormal state of the holding state of the wafer W by the fork 22. In the graph, this time zone is denoted by TM1, and the maximum value range of the peak is denoted by R1.

When it is estimated that the attachment has occurred in this manner, as the action to cope with, the fork 22 and the base 21 are kept stationary for a predetermined time before the operation A3 (withdrawal of the fork 22) The suction of the suction port 23 from the suction hole 24 is stopped. Whereby the vibration of the wafer W on the fork 22 is gradually absorbed (Fig. 14) and the wafer W is supported horizontally on the pad 23 (Fig. 15). After that, the suction by the suction hole 24 resumes and the wafer W is sucked. Thereafter, the above-described operations A3 to A7 are executed in the same manner as in the normal operation, and the wafer W is transferred to the transfer module TRS0. By performing such a coping operation as described above, it is possible to prevent the fork 22 from falling back from the fork 22 in a state in which the wafer W is unstable. As a countermeasure, the time for which the fork 22 and the base 21 are brought into a stopped state after the operation A2 is executed and before the operation A3 is started is the same as the time before the operation A3 is started after the operation A2 is executed Is longer than the time when the fork 22 and the base 21 are brought into a stopped state. The time when the carriage is normally stopped is 0 second.

(Above type 2: adhesion of wafer)

The adhesion of the wafer W is the same as that described above for the type 1 adhesion, but it is assumed that adhesion to the loading portion of the wafer W is higher than adhesion. That is, this adhesion is an abnormality in loading in the loading section of the transfer source of the wafer W. The operation of the transfer arm 2 when receiving the wafer W adhered in this manner from the loading portion C1 of the carrier C and the state of the received wafer W are shown in FIGS. This paper focuses on the difference from the case.

The operations A1 and A2 described in Fig. 10 are performed to raise the base 21, and the pad 23 of the fork 22 adsorbs the wafer W. Fig. The base 21 rises while the wafer W is held in contact with the loading portion C1 by the adhesion to the loading portion C1, and the fork 22 is warped (Fig. 17). Thereafter, the restoring force of the fork 22 is increased with the increase of the amount of deflection of the fork 22, so that the wafer W is separated from the loading portion C1. By the moment of separation as described above, the wafer W jumps out of the pad 23 more abruptly than in the case where sticking occurs, and vibrates on the fork 22 (Fig. 18).

In the upper graph of Fig. 21, the time series data of the exhaust pressure obtained in this case is shown by a solid line waveform like the graph of Fig. The wafer W is attracted to the pad 23 and then separated from the pad 23, so that the evacuation pressure rises after descending. However, in the case where the adhesion has occurred, since the wafer W is separated from the pad 23 when the base 21 is located at a higher position with respect to the loading portion C1 than when the above adhesion occurs, the exhaust pressure increases The timing to start is slow.

In the graph on the lower side of Fig. 21, the time series data of the differential values calculated from the time series data of the exhaust pressure thus acquired is shown by a solid line waveform. Since the pressure in the exhaust pipe 26 rises very abruptly due to the above-described wobbling of the wafer W, a peak of a very large waveform appears at the time of such occurrence, as shown in this graph. Therefore, the time zone in which the peaks are expected to occur and the maximum value of the peaks in the waveforms are different when adhesion of the wafer W occurs and when adhesion occurs. Therefore, by setting in advance the time zone in which the peeling due to the sticking is expected and the maximum value range of the peaks of the waveforms in which the peaks are expected to occur in the time period, It can be estimated that adhesion occurred at the time of receiving. In the graph, this time zone is denoted by TM2 and the range of the peak maximum value is denoted by R2.

If it is assumed that adhesion has occurred in this way, the base 21 is lowered as a coping action and the exhaust of the pad 23 is stopped. By the descent of the base 21, after the wafer W is transferred to the loading portion C1 again, the descent of the base 21 is stopped and the wafer W is stopped (Fig. 19). After that, operations after A2 are performed. That is, the suction by the pad 23 is resumed, the base 21 is lifted, the wafer W is received on the fork 22, and the wafer W is transferred to the transfer module TRS0 (FIG. 20).

The reloading and reloading of the wafer W onto the loading section C1 is performed in addition to preventing the fork 22 from retracting in the unstable state of the wafer W and dropping the wafer W from the fork 22 , And it is intended to weaken the adhesive force of the adherend which causes adhesion in the loading section C1. That is, by carrying out an operation of loading and unloading the wafer W on the deposit of the loading section C1, which is the cause of the adhesion, the adhesive force of the deposit is weakened and the wafer W So that adhesion does not occur when it is transported to the loading section C1 again.

(Above type 3: adhesion of foreign matter)

The adhesion of the foreign object includes a case having a foreign object adhered to the back surface of the wafer W and a case having a foreign object attached to the pad 23. As will be described later, in the case where the adhesion of the foreign object is estimated, it is assumed that foreign objects are adhered to the back surface of the wafer W among these cases, and a coping operation is performed. Depending on the time-series data of the derivative value obtained when the coping operation is carried out, the assumption is modified to be the attachment of the foreign matter on the pad 23. 22 to 26 show the operation of the transfer arm 2 when the foreign matter P is attached to the back surface of the wafer W and the wafer W is received from the loading unit C1.

The operations A1 and A2 are performed to raise the base 21 and the pad 23 of the fork 22 picks up the wafer W and lifts the wafer W (Figs. 22 and 23). At this time, the foreign object P is interposed between the pad 23 and the back surface of the wafer W, so that the suction hole 24 of the pad 23 is not closed by the wafer W and remains open. An end face side of the pad 23 in this state is enlarged and shown in the frame at the end of the dotted line arrow in Fig. 23, and shows airflow flowing into the suction hole 24 opened by the solid line arrow.

In the graph on the upper side of Fig. 27, the time series data of the exhaust pressure obtained in such a case is shown by a solid line waveform. Since the suction hole 24 is opened as described above, even if the wafer W is received by the fork 22, the amount of decrease in the exhaust pressure is small, and no abrupt change occurs. In the graph on the lower side of Fig. 27, the time-series data of the differential values obtained from the time-series data of the exhaust pressure is shown by a solid line waveform. The differential value changes to a relatively large value during the time when the base 21 is lifted and the fork 22 receives the wafer W because a rapid change in the exhaust pressure does not occur as described above. That is, the minimum value of the differential value in the time period is relatively large. Therefore, it is possible to estimate that the adhesion of the foreign object has occurred from the time series data of the differential value by previously setting a time range and a range for the minimum value of the differential value estimated to be abnormal. In the graph, this time zone is denoted by TM3, and the range of the minimum value of the differential values is denoted by R3. The adhesion of foreign matter estimated here is adhesion of foreign matter to the wafer W as described above.

If the adhesion of foreign matter to the wafer W is estimated, the base 21 is lowered and the wafer W is loaded again on the loading portion C1 as a coping operation. Then, the lowering of the base 21 is stopped (Fig. 24), the fork 22 is slightly retreated (Fig. 25), and the operation of A2 (rising of the base 21) is performed again. Thus, the wafer W is received on the back surface of the wafer W by contacting the pad 23 at a position different from the position in contact with the wafer W at the time of receiving the wafer W. It is judged whether or not the minimum value of the differential value in the time zone TM3 is within the range R3 in the time series data of the obtained differential value as in the case of the reception attempt of this reacquisition and the preceding reception. When it is determined that the wafer W is not in the range R3, it is determined that the pad 23 has sucked the wafer W by avoiding the foreign object P as shown in Fig. 26. The operation after A3 shown in Fig. 10 is performed, . By performing such a coping operation, it is possible to prevent the carrying operation from being performed in a state in which the wafer W is not sufficiently attracted. Therefore, it is possible to prevent the wafer W from falling off from the fork 22 during transportation, and to prevent the wafer W from splashing on the fork 22.

Even when receiving the above again, when it is determined that the minimum value of the differential value in the time zone TM3 is within the range R3, the base 21 is lowered and the wafer W is loaded again on the loading section C1, 22, the base 21 is lifted and the fork 22 receives the wafer W. The wafer W is lifted by the fork 22, That is, the wafer W is received so that the position at which the pad 23 contacts the wafer W is further shifted. In the time-series data of the differential value acquired at the time of reception, the minimum value of the differential value in the time zone TM3 is within the range R3 Is again determined. That is, it is judged whether or not the adsorption has been performed by avoiding the foreign substance P.

Adjustment of the retention position of the wafer W due to retraction of the fork 22 is repeatedly performed until it is determined that the foreign substance P has been absorbed. However, if it is determined that the foreign object P has not been adsorbed even though the holding position is adjusted a predetermined number of times, it is possible to cancel the estimation that foreign matter adheres to the back surface of the wafer W, Is estimated. After the base 21 is lowered and the wafer W is reloaded to the loading unit C1, the base 21 moves to the foreign object removing unit 4 as a coping action to remove the foreign objects described in Figs. An operation is performed. After the removal operation is completed, the operations A1 to A7 are performed, and the wafer W is carried from the loading section C1 to the transfer module TRS0.

(Above type 4: crack in the wafer)

There is a case where the wafer W loaded on the module is cracked due to factors such as a thermal shock generated when the wafer heated by the module is transferred to another module and cooled, and the deterioration of the wafer W. [ 28 to 30, a description will be given of a state in which the carrier arm 3 receives the wafer W thus cracked from the temperature regulation module SCPL.

The above-described operations A1 and A2 are performed to raise the base 21 (Fig. 28), and the pad 23 of the fork 22 picks up the wafer W and lifts it. The wafer W is cracked, so that the closure of the suction hole 24 is incomplete and the position on the pad 23 is shifted, so that the atmosphere is slightly introduced into the suction hole 24. In the upper graph of Fig. 31, the time series data of the exhaust pressure obtained in this case is shown by a solid line waveform. After the wafer W is received, the atmosphere is introduced into the suction hole 24 as described above, so that the exhaust pressure rises slightly after descending.

In the graph on the lower side of Fig. 31, time series data of differential values obtained from the time series data of this exhaust pressure is shown by a solid line waveform. As the exhaust pressure is changed as described above, the differential value increases after the reception of the wafer W, and a peak is generated. Since the sudden entering of the atmosphere is suppressed more than when the wafer W is splashed by adhesion or adhesion, the peak is smaller than the peak that is detected when adhesion or adhesion occurs. Therefore, by setting the range of the maximum value of the peak in advance, it is possible to estimate whether or not cracks have occurred in the received wafer W from the time series data of the obtained differential values. This range is indicated as R4 in the graph.

If it is estimated that such a crack of the wafer W has occurred, the base 21 descends as a coping action and the wafer W is reloaded in the temperature adjusting module SCPL (Fig. 30). Thereafter, when a subsequent wafer W is carried from the carrier C, a module other than the temperature adjustment module SCPL in which the thus-cracked wafer W is loaded is used among a plurality of temperature regulation modules SCPL. It is possible to prevent the fragments of the wafer W from falling off the fork 22 and scattering in the apparatus, and to continue the conveyance of the subsequent wafer W by the transfer arm 3 It is not necessary to stop the application and the operation of the developing apparatus 1.

(Above type 5: peeling of the wafer film)

The surface of the wafer W spattering from the fork 22 may come into contact with the components of the transfer arm or other application or developing apparatus 1, and the film on the surface may peel off, that is, the wafer W may be damaged. Here, the peeling of the film at the time of carrying by the carrying arm F1 will be described. For example, the operations A1 to A3 shown in Fig. 10 are performed, the wafer W is received by the fork 22 on the lower side of the carrying arm F1, and then the base 21 is moved to be transferred to the module at the rear end. That is, the operation A4 is performed. While the operation A4 is being performed, for example, the base 21 vibrates due to an abnormality of the driving mechanism for moving the base 21, so that the wafer W is ejected from the pad 23, And collides with the upper fork 22 and rubs to peel off the film.

In the upper graph of Fig. 33, the time series data of the exhaust pressure obtained in this case is shown by a solid line waveform. The wafer W is spaced apart from the pad 23, so that the exhaust pressure that has been stably changed rises sharply. In the graph on the lower side of Fig. 33, time series data of differential values obtained from the time series data of the exhaust pressure is shown by a solid line waveform. As the exhaust pressure is changed as described above, the differential value sharply rises and a relatively large peak is generated. Therefore, by setting in advance a range of the value of the peak at which the abnormality occurs in the time period during which the operation A4 is performed, whether or not peeling has occurred from the time series data of the obtained differential value, that is, whether or not the holding state of the wafer W is Can be estimated. The range of the value of the peak at which this abnormality occurs is indicated as R5 in the graph.

Assuming that peeling has occurred as described above, the control unit 5 causes the wafer W to store the data identifying the wafer W in the memory 52 as a coping action. That is, marking of the wafer W is performed. Further, an alarm indicating that there is an abnormality in the wafer W is outputted from the alarm output section 53.

The above-described various other errors do not occur only in the illustrated transfer arm, but also occur when transfer is performed by another transfer arm. That is, for example, an example in which the attachment of the above-described type 1 occurs at the time of transportation by the transfer arm 2 is shown. However, this attachment is also an anomaly that occurs at the time of transfer of the transfer arm 3. Also, in the case where the transport is performed by another transport arm, the above-described sorting and coping operations are performed in the same manner as in the example shown. Although a detailed description has been omitted, the same kind of abnormality or the like is subjected to the estimation and the coping operation when carrying by the carrying arm provided in the interface block D3. The foreign matter removing unit 4 has been described as an example in which the transfer arm 2 is provided at an accessible position. However, as with the transfer arm 2, The foreign matter removing unit 4 can be mounted at each height position accessible by each of the transport arms of the towers T1 and T2.

Next, an example of the procedure in which the above types 1 to 4 are estimated and each coping action is performed will be described using the flowchart in Fig. First, the operations A1 and A2 shown in Fig. 10 are executed to receive the wafer W on the transfer arm. The time series data of the exhaust pressure is acquired in parallel with the reception, and the time series data of the differential value is acquired (step S1). When it is judged whether or not the maximum value of the differential values in the time series data is within the range R1 shown in Fig. 16 and within the time slot TM1 (step S2) and it is judged that the maximum value is within the time slot TM1 in the range R1, It is estimated that the adhesion of the wafer W described in Fig. Then, as shown in Figs. 14 and 15, the suction of the pad 23 of the transfer arm is stopped and the transfer arm is placed in the stop state (step S3). After that, the transfer of the wafer W is continued (step S4). That is, each operation after the operation A3 shown in Fig. 10 is performed.

If it is determined in step S2 that the maximum value of the differential value is not within the range R1 or within the time slot TM1, then it is determined whether or not the maximum value of the differential value is within the range R2 shown in Fig. 21 and within the time slot TM2 (step S5) . When it is determined that the maximum value of the differential value is within the range R2 and in the time zone TM2, it is estimated that the adhesion of the wafer W described in Figs. 17 and 18 has occurred. As described in Figs. 19 and 20, And is received again by the carrying arm (step S6). After that, step S4 is performed. That is, the wafer W is continuously conveyed.

If it is determined in step S5 that the maximum value of the differential value is not within the range R2 or within the time period TM2, whether or not the maximum value of the differential value is within the range R4 described in Fig. 31 is determined (step S7). When it is determined that the maximum value of the differential value is within the range R4, it is estimated that cracks of the wafer W described in Figs. 28 and 29 have occurred, and the wafer W is reloaded at the place where the wafers W were loaded (Step S8). If it is determined in step S7 that the maximum value of the differential value is not within the range R4, it is determined whether or not the minimum value of the differential values in the time period TM3 shown in Fig. 27 is within the range R3 (step S9). If it is determined in step S9 that the minimum value of the differential value in the time zone TM3 is within the range R3, it is estimated that foreign matter adheres to the wafer W as described with reference to Figs. 22 and 23. As described with reference to Figs. 24 to 26 The transfer arm again receives the wafer W so that the suction position for the wafer W is shifted (step S10).

From the time-series data of the differential values acquired at the time of re-receipt, it is determined whether or not the wafer W has been sucked away from the foreign object. That is, whether or not the minimum value of the differential value in the time zone TM3 is within the range R3 (step S11). When it is judged that the foreign matter has been adsorbed by being avoided, step S4 (continuation of conveyance of the wafer W) is performed. If it is determined in step S11 that the foreign matter is not adsorbed and the determination is continued even if the position at which the transfer arm sucks the wafer W is changed a predetermined number of times as described above, It is presumed that the foreign matter adheres to the pad 23 of the transfer arm.

Then, the carrying arm is reloaded at the place where the wafer W estimated to have been affixed until then is removed, and the foreign object removing operation of Figs. 6 to 8 is performed (step S12). Thereafter, step S4 is performed, and the wafer W, which is estimated to have adhered foreign matter, is transported in the above-described operations A1 to A7. If it is determined in step S9 that the minimum value of the differential value in the time zone TM3 is not within the range R3, it is estimated that no abnormality of transfer has occurred, and the transfer of the wafer W in step S4 is continued.

Subsequently, the procedure for estimating the above-mentioned type 5 and performing the coping operation will be described. The operation A4 described in Fig. 10, that is, the movement of the base 21 of the transfer arm holding the wafer W is performed. The time series data of the exhaust pressure is acquired in parallel with this movement, and the time series data of the differential value is acquired. It is determined whether the value of the peak in the time series data of this differential value is included in the range R5 described in Fig. If the value of the peak is not included in the range R5 during the execution of the operation A4, it is presumed that no abnormality of conveyance occurs. When the value of the peak is included in the range R5, it is presumed that film separation has occurred on the wafer W being transported, and the alarm output and marking of the transported wafer W are performed.

According to the coating and developing apparatus 1, while the transfer arm holding and holding the wafer W by the suction hole 24 carries the wafer W from the first loading section to the second loading section, the suction holes 24 And the pressure sensor 28 for detecting the exhaust pressure in the exhaust pipe 26 connected to the exhaust pipe 26. The time derivative data of the exhaust pressure for each signal acquisition interval is calculated in the time zone in which the detection signal is acquired to generate time series data. The abnormality of the conveyance is detected based on the time series data, so that the above detection can be performed with high accuracy. The differential value is not limited to the differential value of the exhaust pressure continuously obtained as described above. For example, the difference value between the exhaust pressure at a certain acquisition time and the exhaust pressure acquired at the time of acquisition two times from a certain acquisition time may be a differential value.

Next, the temperature adjusting module SCPL shown in Fig. 35 will be described. This SCPL is provided with a loading plate 45 serving as a loading unit for temperature adjustment of the loaded wafer W by supplying cooling water. A suction port 24 is formed on the surface of the loading plate 45, like the carrying arm 2, . The suction hole 24 of the loading plate 45 is also connected to the exhaust mechanism 27 on the downstream side through the exhaust pipe 26 in the same manner as the suction hole 24 of the transfer arm. A pressure sensor 28A configured similarly to the pressure sensor 28 of the transfer arm is provided. When the wafer W is received from the SCPL and cracks in the wafer W are estimated as described above, the base 21 of the transfer arm 2 is moved in the state of being sucked from the suction hole 24 of the redistributor 45 The wafer W is reloaded on the reed plate 45 as shown in Fig. A detection signal of the pressure sensor 28A during the descent of the transfer arm 2 is acquired by the control unit 5. [

Based on the detection signal from the pressure sensor 28A, the control unit 5 creates time series data of the derivative value as in the case where the detection signal is obtained from the pressure sensor 28. [ Based on the time-series data of the differential value, the control unit 5 confirms the crack of the wafer W as a coping operation. More specifically, the integrated value of the differential value for each time when the detection signal of the pressure sensor is acquired is calculated. The graph of Fig. 37 shows the waveform of the integrated value thus acquired. The horizontal axis is time (unit: second), and the vertical axis is integration value (unit: ㎪). The control unit 5 compares the waveform of the acquired integrated value with the waveform of the integrated value acquired in the case where there is no crack of the wafer W shown in Fig. 38, and confirms whether or not the wafer W is cracked.

When there is a crack in the wafer W, the debris is moved on the redistribution plate 45 when the wafer W is placed on the redistribution plate 45, The atmospheric pressure changes. Thereby, unlike the case where there is no crack in the wafer W, a relatively sharp peak appears in the waveform of the integrated value as shown in Fig. Thus, by comparing the waveforms as described above, it is possible to confirm whether or not the wafer W has cracks. Also, in the module other than the SCPL, the suction hole 24 and the pressure sensor 28A may be provided in the same manner as the SCPL so as to confirm the crack of the wafer W.

However, for example, the transfer module TRS may be configured to include the redistribution plate 45 as a stacking unit, such as the temperature adjustment module SCPL in Fig. 35, or may be provided with three vertical fins as a stacking unit, The wafer W may be supported. Assuming that the area where the redistral plate 45 overlaps the back surface of the wafer W is a first area, the area where the three fins overlap the back surface of the wafer W is a second area smaller than the first area. It is assumed that the transfer module TRS having these different structures is installed in the coating and developing apparatus 1. When a crack of the wafer W is estimated when the wafer W is received from the redistribution plate 45 having the first area, the wafer W is reloaded onto the redistribution plate 45 as described above as a coping action. When cracks of the wafer W are estimated when the wafer W is received from the three fins having the second area, the operation of the transfer arm may be stopped without reloading the wafer W as a coping operation. Whereby the scattering of the fragments of the wafer W can be more reliably suppressed.

Further, when performing the coping operation when the adhesion of the foreign object on the wafer W is estimated, a moving mechanism for moving the loading portion of the module may be provided so that the wafer W can be loaded at a different position of the fork 22. That is, when the abnormality is estimated and thereafter, when the re-receipt is performed, the transfer may be performed such that the relative position of the fork 22 and the wafer W is different. In the above example, when adhesion of foreign matters on the wafer W is estimated, the wafer W is loaded (temporarily placed) on the wafer W receiving source and reacquired by the fork 22, The wafer W may be reloaded such that the wafer W is temporarily placed on the loading unit C1 of the different module or carrier C and the relative positions are different. However, in order to prevent the wafer W from falling down from the fork 22 until the wafer W is moved to such a temporary holding place, it is preferable to temporarily hold the wafer W at the receiving end of the wafer W. [

Next, reference will be made to reference numeral 4A, which is another example of the foreign substance removing unit shown in Figs. 39 and 40, with reference to the difference from the foreign substance removing unit 4 described above. The foreign matter removing unit 4A includes a housing 40 and a rotating mechanism 46 provided on a ceiling portion in the housing 40. The foreign matter removing unit 4A includes a rotating mechanism 46 and a housing 40 Is connected to the surface of the disk 44 which is horizontally disposed. The rotating mechanism 46 can rotate the disk 44 about the vertical axis.

The fork 22 of the transfer arm 2 that has moved the base 21 from the retracted position to the advanced position can enter the housing 40 through the opening 48 provided in the housing 40. [ The back surface of the disk 44 is pressed against the pad 23 of the fork 22 by the spring 47 so that the base 21 is lifted and lowered with the fork 22 in the housing 40. [ (The state shown in Fig. 40) and the state where the back surface of the disk 44 is separated from the pad 23 (the state shown in Fig. 39) can be switched. When the back surface of the disk 44 is separated from the pad 23, the direction of the disk 44 is changed by the rotation mechanism 46 . Thereby, every time the base 21 rises, the pad 23 is brought into close contact with the different position of the disk 44, so that the foreign matter attached to the pad 23 can be removed more reliably.

(Detecting and coping with abnormalities during forward and backward movement of the fork)

Hereinafter, the operation when the exhaust pressure in the exhaust pipe 26 is lowered during forward and backward movement of the fork 22 for sending or receiving the wafer W will be described. If the exhaust pressure is reduced like this, the wafer W slips on the fork 22, and the position of the wafer W may be displaced. Therefore, after the above detection, the operation for suppressing the positional deviation and the detection of the positional deviation are performed. The wafer position detection unit 6 is provided in each of the substrate transport mechanisms so that the positional deviation can be detected.

The wafer position detection unit 6 provided on the transfer arm 2 will be described with reference to FIG. The wafer position detecting section 6 is provided with four sets of a light projecting sensor 61 and a light receiving sensor 62 which are supported on a base 21 by a not-shown supporting section. The light projecting sensor 61 and the light receiving sensor 62 forming the same group are arranged so that the peripheral portion of the wafer W supported by the fork 22 at the retracted position is fitted in the vertical direction, A part of the light irradiated to the wafer W is blocked by the wafer W and the other part is irradiated to the light receiving sensor 62 without being blocked by the wafer W, That is, the size of the area received by each light-receiving sensor 62 corresponds to the position of the peripheral edge of the wafer W, and the light-receiving sensor 62 outputs a signal corresponding to the size of the light-receiving area to the control unit 5 .

The control unit 5 controls the position of the peripheral edge of the wafer W and the position of the peripheral edge of the wafer W on the basis of the output signal from each of the light receiving sensors 62 So that the center position can be calculated. Hereinafter, the transfer of the wafer W between the transfer arm 2 and the loading portion C1 of the carrier C will be described with reference to Figs. 42 and 43. Fig. In Figs. 42 and 43, the display of the wafer position detecting section 6 is omitted.

(Abnormal when sending out 1)

The fork 22 holding the wafer W starts to move from the retracted position toward the advancing position (time t10) while the base 21 is stopped just before the loading portion C1, and during this movement, Data is obtained, and the differential value in the time-series data is compared with a predetermined reference value. As a result of the comparison, if the differential value exceeds the reference value, it is determined that there is an abnormality and deceleration of the fork 22 is started (time t11, Fig. 42). The moving speed of the fork 22 gradually decreases with time, that is, toward the forward position, and the fork 22 stops at the forward position (time t12, FIG. 43). Thereafter, for example, it is determined whether or not the exhaust gas pressure value (analog value) detected at this stop by the exhaust gas pressure sensor 28 is higher than the reference value. If it is determined that the value is not higher than the reference value, An alarm indicating that the exhaust pressure is abnormal is output, and the conveyance by the conveying arm 2 is stopped. When it is determined that the analog value is higher than the reference value, the wafer W is transferred to the loading section C1 by the lifting operation of the base 21. Marking is performed on the wafer W as a possibility that an abnormality has occurred.

In the graph of Fig. 44, the operation state of the fork 22 at time t10 to time t12 is shown by a solid line. The horizontal axis and the vertical axis of the graph represent the time and the moving speed of the fork 22, respectively. The dotted line in the graph indicates the operation state of the fork 22 in the normal case where no abnormality is determined during the forward movement. The time t13 in the graph indicates the timing at which the fork 22 starts decelerating in the normal case, Time t14 is a timing at which the fork 22 stops at the forward position in a normal case. If it is determined that there is an abnormality as shown in the graph, the fork 22 starts decelerating at a timing earlier than the time t13. The timing at which the fork 22 starts decelerating is faster than the preset time.

(Abnormality at the time of receiving 1)

The fork 22, which has received the wafer W from the loading portion C1, starts moving from the forward position to the retracted position (time t20) while the base 21 is stopped just before the loading portion C1. That is, the fork 22 is retracted from the state shown in Fig. During this movement, the time series data of the differential value is acquired, and the differential value in the time series data is compared with a predetermined reference value. As a result of the comparison, if the differential value exceeds a predetermined reference value, it is determined that there is an abnormality and the deceleration of the fork 22 is started (time t21). Then, as time passes, that is, as it approaches the retracted position, the moving speed of the fork 22 gradually decreases, and the fork 22 stops at the retracted position (time t22). Thereafter, as in the case where the fork 22 is located at the forward position at abnormality 1 at the time of dispensing, a determination is made based on the analog value of the exhaust pressure. In accordance with the determination result, for example, Output of the transfer arm 2, stop of transfer by the transfer arm 2, or marking of the wafer W is performed. It is also determined whether or not the center position of the wafer W is within the permissible range. Even if the carrier is not stopped as a result of the determination based on the analog value, it is determined that the center position of the wafer W is not located within the permissible range , The conveyance by the conveying arm 2 is stopped and an alarm is output.

The graph of Fig. 45 shows the operating state of the fork 22 when the abnormality is determined by the solid line as in the graph of Fig. 44, and the operating state of the fork 22 at the normal time by the chain line. The time t23 in the graph is the timing at which the fork 22 starts decelerating in the normal case, and the timing at which the fork 22 stops at the retreating position when the time t24 is normal. As shown in the graph, if it is determined that the abnormality is present, the fork 22 starts decelerating at timing earlier than time t23. The timing at which the fork 22 starts decelerating is faster than the preset time.

As described above, the control of the speed of the fork 22 at the time of dispensing 1 or the time of dispensing at the time of dispensing 1 causes the wafer W to move forward or backward due to inertia, This is for suppressing the speed difference of the fork 22 and suppressing the positional deviation of the wafer W on the fork 22. [ It is also possible to change the speed of the fork 22 from the time t11 or t21 when the abnormality is detected to the speed at the time t11 or t21 and then decrease the speed. It is possible to suppress the position shift more reliably by reducing the speed difference.

(Abnormal 2)

The operation of the abnormality 2 at the time of dispatch described below is performed in place of the operation of the abnormality 1 at the time of dispatch, and the difference between the dispatch and the operation at the dispatch 1 will be mainly described. When the fork 22 holding the wafer W is moving from the retreat position toward the advancing position, the time series data of the differential value is acquired. If the differential value exceeds the reference value, it is determined that there is an abnormality. (At time t31). Thus, for example, the fork 22 stops before reaching the advancing position shown in Fig. Then, it is determined whether or not the analog value of the exhaust pressure obtained at the time of stopping is higher than the reference value. If the analog value is higher than the reference value, the fork 22 starts to retreat (time t32). The speed at this retreat is lower than the retreat speed of the fork 22 at the normal time.

When the analog value of the exhaust pressure acquired at the time of stopping is higher than the reference value, the detection of the center position of the wafer W and the detection of the center position of the wafer W in the allowable range It is judged whether or not it is in the inside. If it is determined that the center position is within the permissible range, the fork 22 moves toward the advancing position. This forward speed is lower than the normal forward speed.

As shown in Fig. 43, when the fork 22 reaches the forward position and stops (time t34), it is determined whether or not the analog value of the exhaust pressure acquired at the time of stopping is higher than the reference value. , The wafer W is transferred to the loading section C1 by the lifting operation of the base 21 as in the normal case, and the wafer W is marked as having the possibility of occurrence of an abnormality. When it is determined that the analog value acquired at the time t31, t33, and t34 is not higher than the reference value, an alarm indicating that the exhaust pressure is abnormal is output and the operation of the transfer arm 2 is stopped. The carrying operation of the wafer W is not performed. When it is determined that the central position is not within the permissible range in the judgment between the time t33 and the time t34, the operation of the transfer arm 2 is stopped, and the subsequent wafer W is not carried.

(Abnormality 2 at the time of receiving)

The operation of abnormality 2 at the time of reception described below is performed in place of the operation of abnormality 1 at the time of reception described above and the difference between the operation of abnormality 1 and the operation at abnormality 1 at the time of receipt will be mainly described. When the fork 22 holding the wafer W is moving from the forward position toward the retracted position, the time series data of the differential value is acquired. When the differential value exceeds the reference value, it is determined that there is an abnormality. (At time t41). Then, it is determined whether or not the analog value of the exhaust pressure acquired at the time of stopping is higher than the reference value. If the analog value is higher than the reference value, the retraction of the fork 22 is resumed (time t42). The speed at this retreat is lower than the retreat speed of the fork 22 at the normal time.

When the fork 22 reaches the retreat position and stops (at time t43) and the analog value of the exhaust pressure acquired at the time of stopping is higher than the reference value, the wafer W is marked as a possibility that an abnormality has occurred . Then, the center position of the wafer W is detected, and it is determined whether or not the center position is within the allowable range. If it is determined that the center position is within the allowable range, the wafer W is continuously carried by the transfer arm 2. [ If it is determined that the analog value acquired at time t41 or t43 is not higher than the reference value, an alarm indicating that the exhaust pressure is abnormal is output, the operation of the transfer arm 2 is stopped, and the wafer W Is not performed. If it is determined that the central position is not within the permissible range in the determination of the center position after time t43, the operation of the transfer arm 2 is stopped, and the subsequent wafer W is not carried . When the fork 22 is moved from the retracted position to the forward position or from the advanced position to the retracted position and stopped at the abnormalities 1 and 2 at the time of delivery and the abnormalities 1 and 2 at the time of reception, Determination as to whether there is an abnormality based on a value (digital value) corresponding to the exhaust pressure obtained from a sensor (not shown) for outputting a digital signal according to the atmospheric pressure is also performed, but is omitted in the above description.

The resist film forming module is provided with a spin chuck which rotates while holding the wafer W as a loading part of the wafer W. After the resist film is formed, A thinner is supplied from the nozzle, and unnecessary resist film around the periphery of the wafer W is removed in a ring shape. It is required to transfer the wafer W with high accuracy so that the center of rotation of the spin chuck and the center of the wafer W coincide with each other in order to set the width at which the resist film is removed to a set value. For this reason, when the resist film forming module and the heating module 15 compare the permissible range of deviation between the center and the set position of the wafer W when the wafer W is loaded on the loading section, the resist film forming module is smaller .

Therefore, when it is judged that there is an abnormality when the wafer W is sent to the resist film forming module (second transfer destination), the operation described above in the above-described step 2 is performed, and the wafer W A control signal is transmitted from the control unit 5 to the transfer arms F3 and F4 so that the operation described above under the abnormal condition 1 at the time of dispatch is performed. In other words, depending on the type of module to which the wafer W is transferred, the handling operations performed by the carrying arms F3 and F4 are determined. By performing the coping operation in accordance with the destination, it is possible to prevent the removal width of the resist film in the resist film forming module from becoming abnormal, thereby suppressing the yield of the product and suppressing the unnecessary fork It is possible to omit the forward and backward movement of the arm 22 and suppress the decrease in throughput.

As with the transfer arms F3 and F4, it is possible to control the other transfer arms to perform any one of the control described in the above-described one of the above-described control at the time of dispatch and the above-described control at the time of dispatch at the time of dispatch have. The substrate conveyed by the conveying mechanism of the present invention is not limited to the wafer W, and may be a glass substrate for manufacturing a flat panel display. The apparatus to which the present invention is applied is not limited to the coating and developing apparatus, and may be applied to an apparatus for forming an insulating film or the like. As described above, the present invention is not limited to the above-described embodiments, but can be appropriately changed or combined with each embodiment.

C1:
SCPL: Temperature control module
W: Wafer
1: Coating and developing device
2, 3, F1 to F6:
21: Expectations
22: Fork
23: Pad
24: suction hole
27: Exhaust mechanism
28: Emission pressure sensor (pressure sensor)
4: Foreign body removal unit
5:
51: Program

Claims (16)

A substrate holding portion having a suction hole for sucking and holding the substrate;
A moving mechanism for moving the substrate holding portion,
A pressure detecting section for detecting a pressure of the suction passage communicating with the suction hole,
And a control section for detecting an abnormality in conveyance of the substrate based on a differential value of the pressure detection value of the pressure detection section. The method according to claim 1,
And the control section estimates the above-described type based on the differential value. 3. The method according to claim 1 or 2,
The above-
Wherein the substrate holding section is configured to detect an abnormality in the stacking state of the substrate in the first stacking section for receiving the substrate,
An intervening foreign body between the substrate holding portion and the substrate received from the first mounting portion,
Cracks in the substrate received from the first mounting portion, and
Wherein the substrate holding portion is at least one of damage to the substrate that occurs until the substrate holding portion receives the substrate from the first loading portion and then transfers the substrate to the second loading portion that is the substrate transfer destination of the substrate, Device. The method according to claim 2 or 3,
Wherein the control section outputs a control signal for performing a coping operation corresponding to the above-described type. 5. The method of claim 4,
As an action to cope with an abnormality in the stacking state of the substrate with respect to the first stacking portion,
Wherein the time when the substrate holding portion receives the substrate from the first loading portion and thereafter reaches the stop state until the substrate is transported to the second loading portion is the time when the stop Wherein the control unit controls the movement of the moving mechanism so that the movement of the substrate is longer than the time required for the movement of the substrate. 5. The method of claim 4,
As an action to cope with an abnormality in the stacking state of the substrate with respect to the first stacking portion,
The control unit controls the operation of the moving mechanism so that the substrate holding unit returns the substrate to the first stacking unit again until the substrate holding unit receives the substrate and transports the substrate to the second stacking unit Wherein the substrate transfer device is a substrate transfer device. 7. The method according to any one of claims 4 to 6,
As a coping operation when an interposition of foreign matter between the substrate and the substrate holding portion is estimated,
The substrate is loaded on the temporary holding portion for temporarily holding the substrate until the substrate is transferred to the second mounting portion and then the substrate holding portion is mounted on the substrate holding portion so that the relative position of the substrate holding portion with respect to the substrate is different from that when the abnormality is estimated And the operation of the moving mechanism is controlled so as to receive the substrate from the temporary holding portion by the substrate holding portion. 8. The method of claim 7,
Wherein the control unit includes a foreign matter removal unit for removing foreign matter adhering to the substrate holding unit based on a differential value of the pressure detection value acquired when the substrate holding unit receives the substrate from the temporary holding unit, And the movement of the moving mechanism is controlled so that the holding part moves. 9. The method according to any one of claims 4 to 8,
As a coping operation in a case where a crack of the substrate is estimated,
Wherein the control unit controls the operation of the moving mechanism so that the substrate received by the substrate holding unit is reloaded in the first loading unit and the transfer of the substrate to the second loading unit is stopped. 10. The method according to any one of claims 4 to 9,
As a coping action when damage to the substrate is estimated,
And outputs an alarm from the alarm output unit. 11. The method according to any one of claims 1 to 10,
And a base on which the substrate holding portion is provided,
Wherein the moving mechanism moves the substrate holding portion between the advancing position and the retracting position of the base,
Wherein when the substrate holding portion detects an abnormality while moving from one of the forward position and the retract position to the other position while the substrate holding portion holds the substrate, the control portion controls the moving speed of the substrate holding portion And the control means outputs a control signal so that the first advance / retreat control for reducing the moving speed is performed as the substrate holding portion approaches the other of the forward position and the retract position, . 12. The method according to any one of claims 1 to 11,
And a base,
Wherein the moving mechanism moves the substrate holding portion between the advancing position and the retracting position of the base,
Wherein the base includes a substrate position detecting portion for detecting a position of the substrate held by the substrate holding portion at the retracted position,
Wherein the control unit controls the substrate holding unit to hold the substrate in order to perform detection by the substrate position detecting unit when an abnormality is detected while moving the substrate holding unit from the retracted position to the advancing position while holding the substrate, Wherein said control means outputs a control signal to perform a second advance / retreat control for moving said substrate holding portion to said retreat position. 13. The method of claim 12,
Wherein,
When the substrate holding portion detects an abnormality while the substrate holding portion moves from the retracted position to the advancing position for conveying the substrate to the first conveyance destination, a control signal is outputted so that the first advance / retreat control is performed,
When an abnormality is detected while the substrate holding portion is moved from the retracted position to the advancing position to transport the substrate to the second conveyance destination different from the first conveyance destination, And outputs the output signal. A step of sucking the substrate by the suction hole and holding it on the substrate holding portion,
A step of moving the substrate holding portion holding the substrate by a moving mechanism;
A step of detecting the pressure of the suction passage communicating with the suction hole by the pressure detecting section,
And a step of detecting an abnormality in conveyance of the substrate based on a differential value of the pressure detection value of the pressure detection unit. 15. The method of claim 14,
And estimating the above type based on the differential value. 16. The method of claim 15,
And performing a coping operation corresponding to the estimated type or more.

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