KR20170109901A - Light emitting device and lighting apparatus - Google Patents

Abstract

Embodiments relate to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting device.
A light emitting device according to an embodiment includes a substrate, a first AlN-based layer on the substrate, a second AlN-based layer on the first AlN-based layer, and a first conductive semiconductor layer disposed in contact with the second AlN- An active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a light emitting device,

Embodiments relate to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting device.

A light emitting diode (LED) is one of light emitting devices that emit light when a current is applied, and can emit light with high efficiency at a low voltage, thus saving energy. In recent years, the problem of luminance of a light emitting diode has been greatly improved, and it has been applied to various devices such as a backlight unit of a liquid crystal display device, a display board, a display device, and a home appliance.

For example, nitride semiconductors have received great interest in the development of optical devices and high power electronic devices due to their high thermal stability and wide bandgap energy. Particularly, a blue light emitting element, a green light emitting element, an ultraviolet (UV) light emitting element, and a red (RED) light emitting element using a nitride semiconductor are commercially available and widely used.

The light emitting device according to the prior art has a lateral type light emitting device in which an electrode layer is disposed in one direction of the epi layer and a vertical type light emitting device in which an electrode layer is disposed on a bottom surface and an upper surface of the epi layer.

In the conventional light emitting device, electrons injected from the n-type semiconductor layer and holes injected from the p-type semiconductor layer are recombined in a quantum well of the active layer, and light corresponding to the band gap energy of the quantum well is recombined Since it emits light, quantum wells are an important factor that determines the characteristics of LEDs.

1 is a photograph of a LED epitaxial layer grown on a wafer carrier in a conventional method of manufacturing a light emitting device.

According to the related art, when the LED epitaxial layer is grown on the wafer, abnormal growth (I) occurs in the wafer carrier, and the crystallinity of the LED epitaxial layer is deteriorated, thereby lowering the light output.

Further, according to the related art, abnormal growth (I) occurs in the wafer carrier, and bowing phenomenon of the LED epitaxial layer is intensified, resulting in a problem that the light emission wavelength is uneven and the light output is lowered.

Embodiments provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting device having improved light output by improving crystallinity of an LED epitaxial layer by preventing occurrence of abnormal growth in a wafer carrier.

In addition, the embodiments are directed to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting device having improved uniformity of light emission wavelength and improved light output by preventing occurrence of abnormal growth in a wafer carrier to improve a bowing phenomenon of an LED epilayer .

A light emitting device according to an embodiment includes a substrate, a first AlN-based layer on the substrate, a second AlN-based layer on the first AlN-based layer, and a first conductive semiconductor layer disposed in contact with the second AlN- An active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer.

The method of manufacturing a light emitting device according to an embodiment of the present invention includes the steps of forming a first AlN layer on a substrate by ex-situ method, forming a second AlN layer on the first AlN layer, In-situ, forming a first conductive type semiconductor layer on the second AlN series layer, forming an active layer on the first conductive type semiconductor layer, and forming a second conductive layer on the active layer, Type semiconductor layer.

The lighting apparatus according to the embodiment may include a light emitting unit having the light emitting element.

Embodiments can provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting device by improving the crystallinity of an LED epitaxial layer by preventing abnormal growth in a wafer carrier.

In addition, the embodiments are directed to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting device having improved uniformity of light emission wavelength and improved light output by preventing occurrence of abnormal growth in a wafer carrier to improve a bowing phenomenon of an LED epilayer .

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a photograph of an LED epitaxial layer grown on a wafer carrier in a conventional method of manufacturing a light emitting device. FIG.
2 is a cross-sectional view of a light emitting device according to an embodiment.
3 is a photograph of a wafer carrier in a method of manufacturing a light emitting device according to an embodiment.
4 is a characteristic data of the light emitting device according to the embodiment.
5 to 8 are cross-sectional views illustrating a method of manufacturing a light emitting device according to an embodiment.
9 is a sectional view of a light emitting device package according to an embodiment.
10 is a perspective view of a lighting apparatus according to an embodiment.

In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under" the substrate, each layer Quot; on "and" under "are intended to include both" directly "or" indirectly " do. Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

(Example)

2 is a cross-sectional view of a light emitting device 100 according to an embodiment, which is illustrated with reference to a horizontal light emitting device. However, the present invention is not limited to this embodiment, and may be applied to a vertical light emitting device.

The light emitting device according to the embodiment includes a substrate 105, a first AlN series layer 113a, a second AlN series layer 113b, a light emitting structure layer 110, an electron blocking layer 118, a light transmitting electrode layer 140, And may include at least one of the current diffusion layer 130, the first electrode 151, and the second electrode 152. The substrate 105 may have a concave-convex structure P formed thereon. The light emitting structure layer 110 may include a first conductive semiconductor layer 112, an active layer 114, and a second conductive semiconductor layer 116.

Embodiments provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting device having improved light output by improving crystallinity of an LED epitaxial layer by preventing occurrence of abnormal growth in a wafer carrier.

In addition, the embodiments are directed to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting device having improved uniformity of light emission wavelength and improved light output by preventing occurrence of abnormal growth in a wafer carrier to improve a bowing phenomenon of an LED epilayer .

In order to solve such a technical problem, a light emitting device according to an embodiment includes a first AlN-based layer 113a on a substrate 105, a second AlN-based layer 113b on the first AlN-based layer 113a, A first conductive semiconductor layer 112 disposed on and in contact with the second AlN layer 113b; a second conductive semiconductor layer 112 formed on the active layer 114 and the active layer 114 on the first conductive semiconductor layer 112; The second conductivity type semiconductor layer 116 may include a second conductivity type semiconductor layer 116.

The first AlN layer 113a is ex-situ formed on the substrate 105 and the second AlN layer 113b is formed on the first AlN layer 113a, Or may be formed in-situ on the substrate.

The first AlN-based layer 113a formed in the ex situ manner and the second AlN-based layer 113b formed in-situ can be distinguished through analysis.

For example, the second AlN layer 113b formed in-situ may be formed at a temperature higher than that of the exo-situ first AlN layer 113a, The crystal size of the first layer 113b may be larger than that of the first AlN layer 113a.

In addition, the first AlN-based layer 113a formed in an ex-situ manner and the second AlN-based layer 113b formed in-situ can be divided by various other methods.

In the prior art, when a GaN nitride layer is grown on an AlTiN layer formed by exiting, the GaN nitride layer is not wetted due to poor interface characteristics, There was a problem that the material was abnormally grown on the wafer carrier.

3 is a photograph of a substrate on which a light emitting structure layer is grown on a wafer carrier in a method of manufacturing a light emitting device according to an embodiment.

According to the embodiment, the light emitting structure layer 110 may be formed in contact with the second AlN series layer 113b formed in-situ. For example, the first conductive semiconductor layer 112 is formed on the second AlN layer 113b formed in-situ, thereby causing abnormal growth in the wafer carrier as shown in FIG. 3 The method of manufacturing the light emitting device, the light emitting device package, and the lighting device can be provided, in which the crystallinity of the light emitting structure layer 110 can be improved by preventing the light emitting layer 110 from being formed.

In an embodiment, the second AlN-based layer 113b may be disposed on the first AlN-based layer 113a. For example, the second AlN-based layer 113b may be disposed on the first AlN-based layer 113a without interposing another buffer layer, but the present invention is not limited thereto.

4 is characteristic data of the light emitting device according to the embodiment.

In the embodiment, since the light emitting structure layer 110 is formed in contact with the second AlN layer 113b formed in-situ, the degree of bowing of the light emitting structure layer 110 is improved It is possible to provide a light emitting device, a method of manufacturing the light emitting device, a light emitting device package, and a lighting device having uniform light emission wavelengths and improved light output.

In FIG. 4, the X axis is the thickness of the second AlN system layer 113b, the left side of the Y axis is the scattering data of the emission wavelength, and the right side of the Y axis is the brightness (Po) data.

As shown in Fig. 4, the emission wavelength distribution E1 of the light emitting device according to the embodiment is remarkably improved as compared with the scattering R1 of the prior art. Further, according to the embodiment, the luminous intensity Po data E2 shows a high level.

In an embodiment, the second AlN series layer 113b may be thinner than the first AlN series layer 113a. For example, the thickness of the second AlN family layer 113b may be between about 2 nm and about 7 nm, and if the thickness of the second AlN family layer 113b is less than 2 nm, abnormal growth may occur in the wafer carrier If the thickness of the second AlN system layer 113b is more than 7 nm, the crystallinity is deteriorated and the light output can be lowered simultaneously. For example, the thickness of the second AlN-based layer 113b may be from about 4 nm to about 7 nm, but is not limited thereto.

In an embodiment, the first AlN family layer 113a may be from about 15 nm to about 25 nm, and crystallinity may be degraded if the range is exceeded or exceeded.

Embodiments can provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting device by improving the crystallinity of an LED epitaxial layer by preventing abnormal growth in a wafer carrier.

In addition, the embodiments are directed to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting device having improved uniformity of light emission wavelength and improved light output by preventing occurrence of abnormal growth in a wafer carrier to improve a bowing phenomenon of an LED epilayer .

Hereinafter, a method of manufacturing a light emitting device according to an embodiment will be described with reference to FIGS. 5 to 8. FIG.

First, the substrate 105 may be prepared as shown in FIG. The substrate 105 may be formed of a material having excellent thermal conductivity, and may be a conductive substrate or an insulating substrate.

For example, the substrate 105 is GaAs, sapphire (Al ₂ O _3), SiC, Si, GaN, ZnO, GaP, InP, Ge, and Ga ₂ 0 ₃ May be used. The concavo-convex structure P may be formed on the substrate 105 to improve the light extraction efficiency, but the concavo-convex structure P is not essential. The substrate 105 may be wet-cleaned to remove impurities on the surface.

A first AlN-based layer 113a may be ex-situ formed on the substrate 105. The first AlN layer 113a may be formed at a temperature of about 350 ° C to 430 ° C. When the temperature of the first AlN layer 113a is out of the range, crystallinity may be deteriorated, but the temperature is not limited thereto.

In an embodiment, the first AlN family layer 113a may be from about 15 nm to about 25 nm, and crystallinity may be degraded if the range is exceeded or exceeded.

Next, as shown in FIG. 6, a second AlN-based layer 113b may be formed in-situ on the first AlN-based layer 113a.

In an embodiment, the second AlN family layer 113b may be grown at about 900 ° C to 1000 ° C. If the second AlN family layer 113b is out of the range, abnormal growth may occur in the wafer carrier, but the present invention is not limited thereto.

The first AlN-based layer 113a formed in the ex situ manner and the second AlN-based layer 113b formed in-situ can be distinguished through analysis.

For example, the second AlN layer 113b formed in-situ may be formed at a temperature higher than that of the exo-situ first AlN layer 113a, The crystal size of the first layer 113b may be larger than that of the first AlN layer 113a.

In addition, the first AlN-based layer 113a formed in an ex-situ manner and the second AlN-based layer 113b formed in-situ can be divided by various other methods.

In an embodiment, the second AlN-based layer 113b may be disposed on the first AlN-based layer 113a. For example, the second AlN-based layer 113b may be disposed on the first AlN-based layer 113a without interposing another buffer layer, but the present invention is not limited thereto.

In an embodiment, the second AlN series layer 113b may be thinner than the first AlN series layer 113a. For example, the thickness of the second AlN family layer 113b may be between about 2 nm and about 7 nm, and if the thickness of the second AlN family layer 113b is less than 2 nm, abnormal growth may occur in the wafer carrier If the thickness of the second AlN system layer 113b is more than 7 nm, the crystallinity is deteriorated and the light output can be lowered simultaneously.

6, a light emitting structure layer 110 including a first conductive type conductive layer 112, an active layer 114, and a second conductive type semiconductor layer 116 is formed on the second AlN type layer 113b. May be formed.

According to the embodiment, the light emitting structure layer 110 may be formed on the second AlN series layer 113b formed in the in-situ state. For example, the first conductive semiconductor layer 112 is formed on the second AlN layer 113b formed in-situ, thereby causing abnormal growth in the wafer carrier as shown in FIG. 3 A light emitting device package, and a lighting device in which the light output is improved by improving the crystallinity of the light emitting structure layer 110, a method of manufacturing the light emitting device, and a light emitting device package.

Embodiments can provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting device by improving the crystallinity of an LED epitaxial layer by preventing occurrence of abnormal growth in a wafer carrier.

In addition, in the embodiment, the light emitting structure layer 110 is formed in contact with the second AlN layer 113b formed in-situ, so that the light emitting structure layer 110 is bowed ) Can be improved, thereby providing a light emitting device, a method of manufacturing the light emitting device, a light emitting device package, and a lighting device in which the uniformity of the light emitting wavelength and the light output are improved.

Embodiments provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting device having improved uniformity of light emission wavelength and improved light output by preventing occurrence of abnormal growth in a wafer carrier to improve bowing phenomenon of an LED epitaxial layer can do.

Referring again to FIG. 6, the first conductive semiconductor layer 112 may be formed of a compound semiconductor such as a semiconductor compound, for example, a Group III-V, a Group II-VI, Can be doped.

For example, when the first conductive semiconductor layer 112 is an n-type semiconductor layer, the n-type dopant may include Si, Ge, Sn, Se, and Te.

The first conductive semiconductor layer 112 may include a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + .

 For example, the first conductive semiconductor layer 112 may be formed of one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, .

The first conductive semiconductor layer 112 may be formed using a chemical vapor deposition (CVD) method, a molecular beam epitaxy (MBE) method, a sputtering method, or a vapor phase epitaxy (HVPE) method. .

Next, the active layer 114 may be formed on the first conductivity type semiconductor layer 112.

Electrons injected through the first conductive type semiconductor layer 112 and holes injected through the second conductive type semiconductor layer 116 formed after the first and second conductive type semiconductor layers 116 and 116 are mutually combined to form an energy band unique to the active layer Which emits light having an energy determined by < RTI ID = 0.0 >

The active layer 114 may be formed of at least one of a single quantum well structure, a multi quantum well (MQW) structure, a quantum-wire structure, or a quantum dot structure.

The active layer 114 may include a quantum well 114W / a quantum wall 114B structure. For example, the active layer 114 may be formed of any one or more pairs of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs / AlGaAs, InGaP / AlGaP and GaP / AlGaP. It does not.

Next, an electron blocking layer 118 is formed on the active layer 114 to serve as electron blocking and cladding of the active layer 114, thereby improving the luminous efficiency.

For example, the electron blocking layer 118 may be formed of a semiconductor of Al _x In _y Ga _(1-xy) N (0? _{X ? 1, 0? Y ? 1} ) It can have an energy band gap higher than the energy band gap.

In the embodiment, the electron blocking layer 118 can effectively block the electrons that are ion-implanted into the p-type and overflow, and increase the hole injection efficiency.

Next, a second conductive semiconductor layer 116 may be formed on the electron blocking layer 118.

The second conductive semiconductor layer 116 may be formed of a semiconductor compound. For example, the second conductive semiconductor layer 116 may be formed of a compound semiconductor such as a Group III-V, a Group II-VI, or the like, and may be doped with a second conductive dopant.

The second conductive semiconductor layer 116 may be a Group III-V compound semiconductor doped with a second conductive dopant, for example, In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y 1, 0? X + y? 1). When the second conductive semiconductor layer 116 is a p-type semiconductor layer, the second conductive dopant may include Mg, Zn, Ca, Sr, and Ba as p-type dopants.

The second conductive type semiconductor layer 116 is Bisei that the chamber comprises a p-type impurity such as trimethyl gallium gas (TMGa), ammonia gas (NH _3), nitrogen gas (N _2), and magnesium (Mg) butyl bicyclo The p-type GaN layer may be formed by implanting pentadienyl magnesium (EtCp ₂ Mg) {Mg (C ₂ H ₅ C ₅ H ₄ ) ₂ }, but the present invention is not limited thereto.

In an embodiment, the first conductive semiconductor layer 112 may be an n-type semiconductor layer, and the second conductive semiconductor layer 116 may be a p-type semiconductor layer. Also, on the second conductive semiconductor layer 116, a semiconductor (e.g., an n-type semiconductor) (not shown) having a polarity opposite to that of the second conductive type may be formed. Accordingly, the light emitting structure layer 110 may have any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.

Next, as shown in FIG. 7, a part of the upper conductive semiconductor layer 112 may be partially removed so that the first conductive semiconductor layer 112 is partially exposed. Such a process may be performed by wet etching or dry etching, but is not limited thereto.

Thereafter, the current blocking layer 130 may be formed at a position where the second electrode 152 is to be formed.

The current blocking layer 130 may include a non-conductive region, a first conductive type ion-implanted layer, a first conductive type diffusion layer, an insulator, an amorphous region, and the like.

Next, the light-transmitting electrode layer 140 may be formed on the second conductivity type semiconductor layer 116 on which the current blocking layer 130 is formed. The transmissive electrode layer 140 may include an ohmic layer and may be formed by laminating a single metal, a metal alloy, or a metal oxide so as to efficiently inject holes.

For example, the light transmitting electrode layer 140 may be formed of a superior material in electrical contact with a semiconductor. For example, the light transmitting electrode layer 140 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (ZnO), indium gallium tin oxide (AZO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZON nitride, AGZO Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Ni, IrOx / Au, and Ni / IrOx / , Au, and Hf, and is not limited to such a material.

Thereafter, the passivation layer 160 may be formed on the side of the light emitting structure layer 110 and a part of the light transmitting electrode layer 140 with an insulating layer or the like. The passivation layer 160 may expose a region where the first electrode 151 is to be formed.

Next, as shown in FIG. 8, a second electrode 152 is formed on the light-transmitting electrode layer 140 so as to overlap with the current blocking layer 130, and a second electrode 152 is formed on the exposed first conductive semiconductor layer 112 The first electrode 151 may be formed to manufacture the light emitting device according to the embodiment.

The first electrode 151 or the second electrode 152 may be formed of one selected from the group consisting of Ti, Cr, Ni, Al, Pt, Au, Molybdenum (Mo), but the present invention is not limited thereto.

A plurality of light emitting devices according to the embodiments may be arrayed on a substrate in the form of a package, and a light guide plate, a prism sheet, a diffusion sheet, a fluorescent sheet, and the like may be disposed on a path of light emitted from the light emitting device package.

Embodiments can provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting device by improving the crystallinity of an LED epitaxial layer by preventing occurrence of abnormal growth in a wafer carrier.

In addition, the embodiments are directed to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting device having improved uniformity of light emission wavelength and improved light output by preventing occurrence of abnormal growth in a wafer carrier to improve a bowing phenomenon of an LED epilayer .

9 is a view illustrating a light emitting device package 200 provided with a light emitting device according to an embodiment.

The light emitting device package 200 according to the embodiment includes a package body 205, a third electrode layer 213 and a fourth electrode layer 214 provided on the package body 205, a package body 205, A light emitting device 100 disposed on the first electrode layer 213 and electrically connected to the third electrode layer 213 and the fourth electrode layer 214 and a molding member 230 surrounding the light emitting device 100, . ≪ / RTI >

The third electrode layer 213 and the fourth electrode layer 214 are electrically isolated from each other and provide power to the light emitting device 100. The third electrode layer 213 and the fourth electrode layer 214 may function to increase light efficiency by reflecting the light generated from the light emitting device 100, And may serve to discharge heat to the outside.

The light emitting device 100 may be electrically connected to the third electrode layer 213 and / or the fourth electrode layer 214 by a wire, flip chip, or die bonding method.

The light emitting device according to the embodiment may be applied to a backlight unit, a lighting unit, a display device, a pointing device, a lamp, a streetlight, a vehicle lighting device, a vehicle display device, a smart watch, but is not limited thereto.

10 is an exploded perspective view of an illumination system according to an embodiment.

The lighting apparatus according to the embodiment may include a cover 2100, a light source module 2200, a heat discharger 2400, a power supply unit 2600, an inner case 2700, and a socket 2800. Further, the illumination device according to the embodiment may further include at least one of the member 2300 and the holder 2500. The light source module 2200 may include a light emitting device or a light emitting device package according to the embodiment.

The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250. The member 2300 is disposed on the upper surface of the heat discharging body 2400 and has guide grooves 2310 through which the plurality of light source portions 2210 and the connector 2250 are inserted.

The holder 2500 blocks the receiving groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 housed in the insulating portion 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510.

The power supply unit 2600 may include a protrusion 2610, a guide 2630, a base 2650, and an extension 2670. The inner case 2700 may include a molding part together with the power supply part 2600. The molding part is a hardened portion of the molding liquid so that the power supply unit 2600 can be fixed inside the inner case 2700.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

The substrate 105, the first AlN series layer 113a, the second AlN series layer 113b, the light emitting structure layer 110,
The first conductive semiconductor layer 112, the active layer 114, the second conductive semiconductor layer 116,
The electron blocking layer 118, the light transmitting electrode layer 140, the current diffusion layer 130,
The first electrode 151, the second electrode 152,

Claims (7)

Board;
A first AlN series material on the substrate;
A second AlN series material on the first AlN series material;
A first conductive semiconductor material disposed in contact with the second AlN series material;
An active material on the first conductive semiconductor material; And
And a second conductivity type semiconductor material on the active material. The method according to claim 1,
The second AlN system
And arranged in contact with the first AlN series material. The method according to claim 1,
The first AlN series material is ex-situ formed on the substrate,
The second AlN-based material is formed in-situ on the first AlN-based material,
Wherein a crystal size of the second AIN series material is larger than a crystal size of the first AIN series material. The method according to claim 1,
The second AlN system
Wherein the first AlN-based material is thinner than the first AlN-based material. 5. The method of claim 4,
And the second AlN series material has a thickness of 2 nm to 7 nm. Forming an ex-situ first AlN-based material on the substrate;
Forming a second AlN series material in-situ so as to be in contact with the first AlN series material;
Forming a first conductive semiconductor material on the second AlN-based material;
Forming an active material on the first conductive semiconductor material; And
And forming a second conductive semiconductor material on the active material. A lighting device comprising a light-emitting unit comprising the light-emitting element according to any one of claims 1 to 5.

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