KR20170109081A - 조절된 압력하에서 헬륨을 사용하는 고온 처리 방법 - Google Patents

조절된 압력하에서 헬륨을 사용하는 고온 처리 방법 Download PDF

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KR20170109081A
KR20170109081A KR1020177026254A KR20177026254A KR20170109081A KR 20170109081 A KR20170109081 A KR 20170109081A KR 1020177026254 A KR1020177026254 A KR 1020177026254A KR 20177026254 A KR20177026254 A KR 20177026254A KR 20170109081 A KR20170109081 A KR 20170109081A
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South Korea
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furnace
heating zone
pressure
reaction
reactive gas
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Korean (ko)
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프레더릭 쉬미드
데이비드 비. 조이스
존 브로우일렛
다니엘 피. 베티
리안 필포트
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지티에이티 코포레이션
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/02—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method without using solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020177026254A 2009-09-02 2010-09-01 조절된 압력하에서 헬륨을 사용하는 고온 처리 방법 Ceased KR20170109081A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US23922809P 2009-09-02 2009-09-02
US61/239,228 2009-09-02
PCT/US2010/047506 WO2011028787A1 (en) 2009-09-02 2010-09-01 High-temperature process improvements using helium under regulated pressure
US12/873,388 US9546434B2 (en) 2009-09-02 2010-09-01 High-temperature process improvements using helium under regulated pressure
US12/873,388 2010-09-01

Related Parent Applications (1)

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KR1020127006660A Division KR20120083333A (ko) 2009-09-02 2010-09-01 조절된 압력하에 헬륨을 사용하는 고온 처리 방법

Related Child Applications (1)

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KR1020187029893A Division KR101975735B1 (ko) 2009-09-02 2010-09-01 조절된 압력하에서 헬륨을 사용하는 고온 처리 방법

Publications (1)

Publication Number Publication Date
KR20170109081A true KR20170109081A (ko) 2017-09-27

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KR1020177026254A Ceased KR20170109081A (ko) 2009-09-02 2010-09-01 조절된 압력하에서 헬륨을 사용하는 고온 처리 방법
KR1020127006660A Ceased KR20120083333A (ko) 2009-09-02 2010-09-01 조절된 압력하에 헬륨을 사용하는 고온 처리 방법
KR1020187029893A Active KR101975735B1 (ko) 2009-09-02 2010-09-01 조절된 압력하에서 헬륨을 사용하는 고온 처리 방법

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KR1020127006660A Ceased KR20120083333A (ko) 2009-09-02 2010-09-01 조절된 압력하에 헬륨을 사용하는 고온 처리 방법
KR1020187029893A Active KR101975735B1 (ko) 2009-09-02 2010-09-01 조절된 압력하에서 헬륨을 사용하는 고온 처리 방법

Country Status (6)

Country Link
US (2) US9546434B2 (https=)
JP (3) JP2013503811A (https=)
KR (3) KR20170109081A (https=)
CN (2) CN106948004A (https=)
TW (1) TWI519684B (https=)
WO (1) WO2011028787A1 (https=)

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US20110179992A1 (en) * 2008-10-24 2011-07-28 Schwerdtfeger Jr Carl Richard Crystal growth methods and systems
JP5838727B2 (ja) * 2011-10-28 2016-01-06 株式会社Sumco サファイア単結晶の製造方法及び製造装置
CN102605426B (zh) * 2012-03-14 2015-05-13 苏州先端稀有金属有限公司 一种用于超高温状态下产生温差的热场结构
US9407746B2 (en) * 2012-12-27 2016-08-02 Gtat Corporation Mobile electronic device comprising a sapphire cover plate having a low level of inclusions
CN103173855B (zh) * 2013-03-12 2016-01-06 贵阳嘉瑜光电科技咨询中心 一种惰性气体保护下的hem晶体生长方法
US10633759B2 (en) * 2013-09-30 2020-04-28 Gtat Corporation Technique for controlling temperature uniformity in crystal growth apparatus
CN107130289A (zh) * 2017-06-13 2017-09-05 江苏吉星新材料有限公司 一种改进热交换大尺寸蓝宝石晶体的生长方法
CN108588832B (zh) * 2018-04-28 2021-09-24 内蒙古恒嘉晶体材料有限公司 制备蓝宝石晶体的改进的泡生法及晶体生长炉
CN112501690A (zh) * 2020-12-02 2021-03-16 通辽精工蓝宝石有限公司 一种蓝宝石单晶的生长方法
AT524602B1 (de) * 2020-12-29 2023-05-15 Fametec Gmbh Vorrichtung zur Herstellung eines Einkristalls
TWI811639B (zh) * 2021-02-25 2023-08-11 環球晶圓股份有限公司 長晶純化設備及熱場配件純化方法
CN113880460B (zh) * 2021-11-10 2022-04-08 沃米真玻科技(北京)有限公司 真空玻璃封边抽真空封口一体化加热炉和连续生产线
CN115369489A (zh) * 2022-07-29 2022-11-22 江西兆驰半导体有限公司 一种衬底片无氧退火炉、退火方法以及衬底片
CN117702259A (zh) * 2024-02-06 2024-03-15 宁波合盛新材料有限公司 一种pvt炉快速降温的方法

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Also Published As

Publication number Publication date
TW201129728A (en) 2011-09-01
JP2013503811A (ja) 2013-02-04
JP2017100945A (ja) 2017-06-08
US9546434B2 (en) 2017-01-17
WO2011028787A1 (en) 2011-03-10
JP6423908B2 (ja) 2018-11-14
TWI519684B (zh) 2016-02-01
CN106948004A (zh) 2017-07-14
CN102625864A (zh) 2012-08-01
US20170096746A1 (en) 2017-04-06
KR20120083333A (ko) 2012-07-25
KR101975735B1 (ko) 2019-05-07
JP2015129089A (ja) 2015-07-16
US20110048316A1 (en) 2011-03-03
KR20180115815A (ko) 2018-10-23

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