KR20170105799A - Gas dissociation system - Google Patents

Gas dissociation system Download PDF

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KR20170105799A
KR20170105799A KR1020160028906A KR20160028906A KR20170105799A KR 20170105799 A KR20170105799 A KR 20170105799A KR 1020160028906 A KR1020160028906 A KR 1020160028906A KR 20160028906 A KR20160028906 A KR 20160028906A KR 20170105799 A KR20170105799 A KR 20170105799A
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gas
plasma
module
exhaust line
dissociation
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KR1020160028906A
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Korean (ko)
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KR101895329B1 (en
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임경철
김성열
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주식회사 에프에스티
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
    • H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
    • H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
    • H01L2021/60172—Applying energy, e.g. for the soldering or alloying process using static pressure
    • H01L2021/60187—Isostatic pressure, e.g. degassing using vacuum or pressurised liquid

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Disclosed is a gas dissociation system capable of dissociating and cleaning unreacted gas by using a plasma device on the upstream side of a pump. The gas dissociation system comprises: a chamber in which a process is conducted through reaction gas; the pump connected to the chamber through an exhaust line, and exhausting gas; a scrubber provided in the downstream side of the pump; and a gas dissociation module provided in the exhaust line, and generating plasma to the gas flowing the exhaust line.

Description

Gas Disassociation System [0002]

The present invention relates to a gas dissociation system, and more particularly, to a gas dissociation system that analyzes an exhaust gas generated in a semiconductor process or the like and dissociates exhaust gas to prevent contamination of the pump, To a gas dissociation system for dissociating the exhaust gas.

Generally, a POU (Point Of Unit) scrubber for treating gas is installed and operated at the rear end of a manufacturing facility of a semiconductor or the like. The scrubber may be configured in various forms such as a heat type, a burn type, and a resin type. Process gases used in semiconductor manufacturing facilities are exhausted to the exhaust line by pumps, and toxic, strong explosive and pyrophoric gases must be removed to remove harmful components when venting.

During the process of producing semiconductor devices, there are many processes for discharging the polymer which reduces the toxic gas and pump life, and the by-products which generate the particles. For example, SiH 4 , SiH 2 , NO, AsH 3 , PH 3 , NH 3 , N 2 O, and the like can be used for the chemical vapor deposition (CVD), the ion implantation process, the etching process, , CF, CF 4 , CHF 3 and many other precursor gases are used, and the gases emitted through the process contain various kinds of toxic substances and polymeric by-products. These toxic gases are not only harmful to the human body, but they also cause flammability and corrosiveness, resulting in accidents such as fire, and toxic gases are released into the atmosphere, causing serious environmental pollution. Also, excessive generation of the polymer shortens the life of the pump.

1 schematically shows a configuration of a conventional semiconductor processing equipment. 1, a pump 3 is connected to a reaction chamber 1 through which a reaction process takes place via an exhaust line 2. A scrubber 3 for removing toxic substances contained in the exhaust gas is connected to a rear end of the pump 3, (4). The reaction chamber 1 maintains a vacuum, and a valve is provided between the reaction chamber 1 and the pump 3.

Conventionally, there has been a problem that the life of the pump is reduced due to dust, corrosive substances, and the like contained in the exhaust gas, and the operation of the reaction chamber is stopped during the replacement or maintenance of the pump, thereby deteriorating productivity. That is, the dust of the exhaust gas is fixed to the inside of the pump to increase the load of the rotating body, which causes wear of the bearings and clogging of the exhaust port, resulting in a decrease in maintenance cycle and a deterioration in the service life of the pump. Conventionally, a cold trap or a hot trap has been applied to the front end of the pump to filter out dust from the reaction chamber and periodically replace the dust. In the harsh state, It affected the pressure and caused instability in the process equipment. In addition, there is a limit to the capability of removing pollutants by removing pollutants contained in the exhaust gas in dependence on the scrubber only. In addition, since exhaust gas analysis can not be performed, there is a difficulty in cleaning the chamber, failing the chamber components and judging the process abnormality.

Patent Document 1: Korean Utility Model Publication No. 1998-016134 (Jun. 25, 1998) Patent Document 2: Korean Published Patent Application No. 2003-0080447 (Oct. 17, 2003)

In order to solve such conventional problems, the present invention provides a gas dissociation system capable of analyzing and decomposing and cleaning byproducts and unreacted gas using a plasma apparatus on the upstream side of a pump.

The gas dissociation system according to the present invention includes a chamber in which a process is performed through a reaction gas, a pump connected to the chamber through an exhaust line to exhaust gas, and a scrubber disposed on a downstream side of the pump; And a gas dissociation module provided in the exhaust line and generating plasma in the gas flowing in the exhaust line.

First, the gas dissociation system according to the present invention can analyze the exhaust gas to determine whether there is a process abnormality, the life of the process chamber components, the cleaning period and the stability of the process reaction. Second, , And powder generation can be minimized. In addition, the durability and stability of the apparatus are maximized at the time of operation, and the powder is prevented from sticking to the pump, so that the life of the pump is prolonged, the productivity of the process is improved, and maintenance is considerable. In addition, the gas dissociation module can be compactly integrated to provide excellent efficiency in installation, separation, and maintenance, and the gas dissociation module can be downsized, thereby increasing the degree of freedom in design layout without being restricted by space in the field.

1 schematically shows the configuration of a conventional semiconductor process equipment,
2 schematically shows a configuration of a gas dissociation system according to an embodiment of the present invention,
3 is a cross-sectional view illustrating the inside of a gas dissociation module according to an embodiment of the present invention,
Fig. 4 is a plan view of Fig. 3,
FIG. 5 is a diagram showing a control unit of a gas dissociation system according to an embodiment of the present invention,
FIG. 6 is a cross-sectional view showing the inside of the gas dissociation module according to the modification of FIG. 3,
Fig. 7 is a plan view of Fig. 6,
8 schematically shows a configuration of a gas dissociation system according to another embodiment of the present invention,
9 schematically shows a configuration of a gas dissociation system according to another embodiment of the present invention,
10 schematically shows the configuration of the gas dissociation system according to the modification of Fig. 9,
11 is a configuration diagram showing a control unit of the gas dissociation system according to the modification of FIG.

Hereinafter, the technical configuration of the gas dissociation system will be described in detail with reference to the accompanying drawings.

3 is a cross-sectional view illustrating the inside of a gas dissociation module according to an embodiment of the present invention, and Fig. 4 is a cross-sectional view of the gas dissociation module shown in Fig. 3 And FIG. 5 is a configuration diagram showing a control unit of the gas dissociation system according to an embodiment of the present invention.

2 to 5, a gas dissociation system according to an embodiment of the present invention includes a chamber 10 in which a process is performed through a reactive gas, a chamber 10 connected to the chamber 10 through an exhaust line 20 A pump 30 for exhausting the gas, and a scrubber 40 provided on the downstream side of the pump 30.

The gas dissociation system has a gas dissociation module (100). The gas dissociation module 100 is provided in the exhaust line 20 and generates plasma in the gas flowing in the exhaust line 20. [ The gas dissociation module 100 includes a body 150, an RF coil 130, a conductive material 140, and an RF power supply unit 171.

One side of the body 150 is connected to the exhaust line 20 on the side of the chamber 10 and the other side is connected to the exhaust line 20 on the side of the pump 30. A gas flow path may be formed in the body 150, and the body 150 may be made of stainless steel or aluminum. That is, the body 150 is formed in a substantially pipe shape having a predetermined length, and both sides in the longitudinal direction are connected to the exhaust line 20, respectively. The body 150 is formed in a convex shape at its center in the longitudinal direction, and is provided with a RF coil 130 to be described later to be compact. Flanges 101 and 102 for connecting to the exhaust line 20 may be provided on both sides of the body 150 in the longitudinal direction.

The gas dissociation module 100 may include a cylinder 120. The cylinder 120 may be omitted. The cylinder 120 is made of a cylindrical non-metallic material forming a gas flow path. The cylinder 120 may be made of ceramic or quartz. The cylinder 120 has a cylindrical shape with both sides opened and forms an inner wall of the inner gas flow path of the body 150 in the whole or at least a part of the gas flow direction.

The RF coil 130 is provided in the body 150 and is formed to surround the outside of the gas channel. That is, the RF coil 130 is installed in a spiral shape of the outer circumferential surface of the cylinder 120. The RF power supply unit 171 applies RF power to the RF coil 130. And a temperature sensor 105 for sensing the generation of heat by plasma when RF power is applied. The temperature sensor 105 is installed to safely protect the apparatus when a high temperature is generated. Further, when the plasma by the RF power is not increased, the efficiency of the apparatus is increased by mounting the optical sensor 104 of the interlock concept. In addition, the OES sensor can be installed to measure the composition and intensity of the exhaust gas to determine whether or not the chamber is abnormal.

 The gas dissociation module 100 preferably includes a cooling water supply unit 172 or an air supply unit for cooling the RF coil 130. When power is applied to the RF coil 130, a plasma is generated in the gas flow path to form the plasma region 110.

The conductive material 140 covers the RF coil 130 and helps spread the heat of the RF coil 130. The RF coil 130 covers the outer circumference of the cylinder 120, (140) covers the outside of the RF coil (130) to prevent deformation of the RF coil and serves as a thermal conductor from the coil and the cylinder.

The gas dissociation module 100 includes an injector ring 160. The injector ring 160 is provided in the body 150 and is disposed on the upstream side of the RF coil 130. The injector ring 160 is formed in a substantially circular ring shape, and a plurality of gas holes 161 are formed along the circumference of the ring inner side in the radial direction. The injector ring 160 supplies an additive gas for activating the plasma reaction to the gas flow path. The additive gas functions as a catalyst for promoting the plasma reaction and can be formed of Ar, O 2 , H 2 O gas, or the like.

Referring to FIG. 4, the injector ring 160 injects the additive gas through the injection port 162 and injects the additive gas into the gas flow path through the plurality of gas holes 161. By adding an additive gas that promotes the removal of unreacted gas through the injector ring 160, it is possible to extend the lifetime and efficiency of the device.

The gas dissociation system also includes a steam supply module 190. The steam supply module 190 is provided on the upstream side of the gas dissociation module 100 to supply purified water to the exhaust line 20. The steam supply module supplies DI water to the gas flow path of the exhaust line, and the gas supplied to the steam flows to the gas dissociation module 100 side. The steam supply module 190 serves to maximize the plasma concentration by increasing the ionization amount of the gas dissociation module 100 and to remove the powder.

FIG. 6 is a cross-sectional view showing the inside of the gas dissociation module according to the modification of FIG. 3, and FIG. 7 is a plan view of FIG.

Referring to FIGS. 6 and 7, the gas dissociation system may include a magnet ring module 180. The magnet ring module 180 is preferably disposed in the middle of the RF coil 130 in the gas flow direction. The magnet ring module 180 is fitted to the outside of the cylinder 120 so as to surround the gas flow path. That is, the cylinder 120 is inserted into the magnet ring module 180. The magnet ring module 180 improves the plasma density of the gas flow path and ensures the uniformity of the plasma. That is, the magnet ring module 180 functions as a kind of confinement ring for concentrating plasma generation. The effect of generating plasma can be maximized through the structure in which the magnet ring module 180 is disposed in the middle of the RF coil 130 in the gas flow direction.

5, the gas dissociation system includes a sensor unit 200 for detecting the gas concentration of the gas flow path, an RF power control unit for adjusting intensity intensity of the RF power according to the gas concentration sensed through the sensor unit 200, And an RF matching unit 600 connected to the RF power control unit 500 to adjust the impedance of the RF power applied to the RF power supply unit 171. Further, the gas dissociation system includes the signal processing device 300 and the feedback device 400.

The unreacted process gas generated from the chamber 10 is subjected to RF power by using an ICP (Inductively Coupled Plasma) source in the gas dissociation module 100 to generate plasma. In this case, the pumping speed of the pump 30 is constant, but the type and amount of gas flowing unreacted from the chamber 10 are different depending on the type of process of the chamber 10, (RF Matcher: 600) is required to adjust the impedance of the RF power. The frequency of the ICP plasma may be about 13.56 MHz to 60 MHz.

In the present invention, a signal detecting device is applied between the sensor unit 200 and the RF power device, and the intensity intensity of the RF power is automatically adjusted according to the dissociation gas concentration. In addition, VFC (Variable Frequency Control) is applied to the signal processing device 300 to input a reaction frequency band required for the unreacted gas into the processing device, and the frequency is automatically changed to decompose the unreacted gas.

11 is a block diagram showing a control unit of the gas dissociation system according to the modification of FIG. 5. Referring to FIG. 11, a process state and an internal environment of the chamber 10 are detected by an OES Spectroscopy analyzes the intensity of the spectrum generated at a specific wavelength by changing the light source generated from the ions and radicals present in the plasma to the absorption spectrum and observes the change of the corresponding species, You can find the cycle. For example, since two kinds of wavelengths are different from each other when a film made of aluminum is applied to the outer wall of the chamber, the efficiency can be varied by operating the apparatus according to the situation of the chamber It is possible to operate it.

8 schematically shows a configuration of a gas dissociation system according to another embodiment of the present invention. The gas dissociation module 100 includes a plasma processing module 100a for generating a plasma in the gas flowing in the exhaust line 20 and a gas processing module 100b disposed on the downstream side of the plasma processing module 100a, And an induction processing module 100b for heating the induction processing module 100b.

The unreacted process gas generated from the chamber 10 is subjected to a plasma process through a plasma processing module 100a at an upper portion by applying RF power using an ICP source in the gas dissociation module 100, (About 400 ° C to 600 ° C) due to induction through the induction processing module 100b, and the unreacted gas, which has not reacted in the chamber, is subjected to multi-reaction and discharged to the pump 30. As a result, powder is fixed to the inside of the pump 30 to prevent wear of bearings or clogging of exhaust due to load increase of the rotating body, thereby extending the maintenance cycle and extending the service life of the pump.

The configuration of the present invention is compared with a configuration in which a cold trap or a hot trap is applied to a front end of a conventional pump inlet to periodically replace the powder from the chamber, In a harsh environment such as this, clogging can adversely affect the exhaust, which affects the process pressure, thereby solving the problem of instability in the process equipment.

FIG. 9 schematically shows a configuration of a gas dissociation system according to another embodiment of the present invention, and FIG. 10 schematically shows a configuration of a gas dissociation system according to a modification of FIG.

Referring to FIG. 9, the gas dissociation module 100 includes a plurality of gas dissociation modules 100A and 100B arranged in parallel in the gas flow direction and applying RF power to generate plasma at the same time. That is, the unreacted process gas generated from the chamber 10 is supplied to the gas dissociation modules 100A and 100B made of a dual module by applying an ICP source and dividing the RF power into two, The plasma is simultaneously generated in the region. In this case, a cylinder 120 composed of a ceramic discharge tube can be formed in the RF coil. In order to increase the gas reaction by concentrating the plasma, the magnet ring module 180 is mounted on the outer wall of the cylinder 120 Can be installed. The magnet mounted on the magnet ring module 180 prevents the powder from being deposited on the inner wall of the cylinder 120. The configuration of the cylinder 120 can be omitted, and the effect of the magnet ring module 180 is improved when the cylinder 120 is omitted.

10, the plurality of gas dissociation modules 100A and 100B includes a primary ICP source region for concentrating plasma at the center of the gas flow path in the radial direction, a second ICP source region for concentrating the plasma at the edge of the gas flow path in the radial direction, Lt; / RTI > source region. The unreacted process gas generated from the chamber 10 is supplied to the gas dissociation modules 100A and 100B made of a dual source by simultaneously applying ICP (Inductively Coupled Plasma) and CCP (Capacitive Coupled Plasma) The plasma is generated simultaneously in the primary and secondary regions in order to obtain the effect of the other two times.

In the primary ICP source region, the unreacted gas flowing from the chamber 10 is firstly dissociated, and the RF coil surrounding the cylinder 120 generates plasma at the center of the inside of the cylinder 120 in the radial direction It is concentrated. In the secondary CCP source region, the primary dissociated gas in the primary ICP source region is secondarily dissociated. In the secondary CCP source region, the electrode is located at the center in the radial direction and is grounded at the outer wall of the cylinder 120 to concentrate the generation of plasma at the radially inner edge of the cylinder. As a result, the plasma uniformity can be improved over the entire region in the center portion and the edge portion, i.e., the radial direction, of the inside of the cylinder 120 by combining the two types of sources.

Describing the operation of the gas dissociation system of the present invention, high-temperature ionized plasma is produced using electric energy supplied in a high frequency (RF) inductively coupled manner. The high frequency inductively coupled plasma induces the high frequency current applied to the induction coil to induce a time varying magnetic field in the coil according to the Faraday's law and to cause the time varying magnetic field to induce the electric field in the direction of rotation in the cylinder again according to Ampere's law Thereby accelerating ions and electrons in the cylinder to continuously generate ionization by collision with the surrounding gases, thereby generating an eddy current.

The joule heat generated by the eddy current causes the gas passing through the cylinder to be continuously supplied with energy and plasma gas so as to become an ionized thermal fluid state. In this case, since the electric energy supplied to the ionized heat fluid passing through the cylinder is transmitted through the time-varying electromagnetic field generated from the induction coil and the eddy current according to the principle of the transformer, To deliver efficiently, the main design parameters of the high frequency power supply and the device should be optimized such as frequency, coil winding number and cylinder radius.

The gas dissociation system according to the present invention enables stable high-concentration plasma generation and minimizes powder generation. In addition, the durability and stability of the apparatus are maximized at the time of operation, and the powder is prevented from sticking to the pump, so that the life of the pump is prolonged, the productivity of the process is improved, and maintenance is considerable. In addition, the gas dissociation module can be compactly integrated to provide excellent efficiency in installation, separation, and maintenance, and the gas dissociation module can be downsized, thereby increasing the degree of freedom in design layout without being restricted by space in the field.

Although the gas dissociation system according to the present invention has been described with reference to the embodiments shown in the drawings, it is to be understood that various changes and equivalent embodiments are possible without departing from the scope of the present invention. Accordingly, the scope of the true technical protection should be determined by the technical idea of the appended claims.

10: chamber 20: exhaust line
30: pump 40: scrubber
100: Gas dissociation module
120: cylinder 130: RF coil
140: conductive material 150: body
160: Injector ring 161: Gas hole
171: RF power supply unit 172: Cooling water supply unit
180: Magnet ring module 190: Steam supply module
200: sensor unit 300: signal processing device
400: feedback device 500: RF power controller
600: RF matching section

Claims (11)

A pump 30 that is connected to the chamber 10 through an exhaust line 20 to exhaust gas and a pump 30 that is disposed downstream of the pump 30, A scrubber (40);
And a gas dissociation module (100) provided in the exhaust line (20) for generating plasma in the gas flowing through the exhaust line (20). The method according to claim 1,
The gas dissociation module (100) comprises:
A body 150 having one side connected to the exhaust line 20 on the side of the chamber 10 and the other side connected to the exhaust line 20 on the side of the pump 30 and forming a gas flow path therein;
An RF coil (130) provided in the body (150) and enclosing the outside of the gas channel; And
And an RF power supply unit (171) for applying RF power to the RF coil (130). 3. The method of claim 2,
The gas dissociation module (100)
And a cylinder 120 made of a cylindrical non-metallic material forming a gas flow path. The RF coil 130 surrounds the outer circumference of the cylinder 120 and includes a conductive material 140 covering the RF coil 130 Gas dissociation system. 3. The method of claim 2,
And an injector ring (160) provided in the body (150) and disposed on an upstream side of the RF coil (130) to supply an additive gas for activating a plasma reaction to the gas flow channel. The method according to claim 1,
And a steam supply module (190) provided on the upstream side of the gas dissociation module (100) to supply purified water to the exhaust line (20). 3. The method of claim 2,
And a magnet ring module (180) that surrounds the gas flow path in the middle of the RF coil (130) in a gas flow direction. 3. The method of claim 2,
A sensor unit 200 for detecting a gas concentration of the gas flow channel;
An RF power controller 500 for adjusting the intensity of the RF power according to the gas concentration sensed by the sensor unit 200; And
And an RF matching unit (600) connected to the RF power controller (500) to adjust an impedance of RF power applied to the RF power supplier (171). The method according to claim 1,
The gas dissociation module (100)
A plasma processing module 100a for generating a plasma in the gas flowing through the exhaust line 20 and an induction processing module 100a provided on the downstream side of the plasma processing module 100a for heating gas flowing through the exhaust line 20, (100b). ≪ / RTI > 3. The method of claim 2,
The gas dissociation module (100)
And a plurality of gas dissociation modules (100A, 100B) arranged in parallel in the gas flow direction in parallel and applying RF power to generate plasma at the same time. 10. The method of claim 9,
The plurality of gas dissociation modules (100A, 100B)
A primary ICP source region for concentrating the plasma at the center of the gas flow path in the radial direction and a secondary CCP source region for concentrating the plasma at the edge of the gas flow path in the radial direction. 3. The method of claim 2,
In the chamber 10, an OES (Optical Emission Spectroscopy) as a signal detecting device is provided. The OES changes a light source generated from ions and radicals existing in a plasma into an absorption spectrum, And monitoring the intensity of the chemical species and observing the change of the chemical species.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200009659A (en) * 2018-07-19 2020-01-30 (주) 엔피홀딩스 Processing apparatus of exhaust gas
KR102249085B1 (en) * 2020-10-15 2021-05-07 김형석 Rf plasma exhaust gas treatment device
KR102505668B1 (en) * 2022-03-24 2023-03-03 주식회사 비에이치피 METHOD FOR REMOVING NOx AND DUST FROM HARMFUL GAS EMITTED FROM SEMICONDUCTOR PROCESS

Citations (8)

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