KR100924654B1 - Substrate processing apparatus and method of cleaning for the same - Google Patents

Abstract

The substrate processing apparatus includes a chamber where a substrate is processed and a steam supply unit for providing steam to the chamber. Water vapor provided to the chamber from the water vapor supply cleans the interior of the chamber. Accordingly, the substrate processing apparatus can prevent the chamber from being damaged during the cleaning of the chamber, extend the replacement cycle of the chamber, improve the cleaning efficiency, and prevent the defect of the substrate.

Description

SUBSTRATE PROCESSING APPARATUS AND METHOD OF CLEANING FOR THE SAME

The present invention relates to an apparatus for processing a semiconductor element, and more particularly, to a substrate processing apparatus for processing a semiconductor substrate using plasma.

In general, plasma refers to an ionized gas state composed of ions, electrons, radicals, and the like, and is generated by a very high temperature, a strong electric field, or high frequency electromagnetic fields (RF Electromagnetic Fields).

Particularly, plasma generation by glow discharge is performed by free electrons excited by direct current or high frequency electromagnetic field, and the excited free electrons collide with gas molecules to generate active species such as ions, radicals and electrons. ). These active species physically or chemically act on the surface of the material to change the surface properties. As such, treating the surface of a substance with active species is referred to as plasma treatment.

Such plasma processing is variously used in a process of processing a semiconductor device, and a process of removing an oxide film formed on a substrate using a remote plasma is one of processes of processing a semiconductor device using plasma.

In the oxide film removing process using a remote plasma, first, a substrate is loaded into a chamber, and then plasma is generated in a remote plasma apparatus using nitrogen and hydrogen gas or ammonia gas. The resulting plasma is provided to the chamber through an inlet tube connected to the chamber. At this time, the inlet pipe is supplied with a fluorine-based gas in the middle of the inlet pipe to lower the density of the radicals of the plasma.

The plasma is filtered by a baffle so that mainly radicals are provided to the substrate. These radicals react with the oxide film formed on the substrate to form an oxidative polymer film composed of nitrogen, hydrogen, and fluorine components. Thereafter, the polymer film is removed through the heat treatment process, and the oxide film on the substrate is removed.

However, in this process, particles of the oxidative polymer component are attached to the chamber inner wall or baffle, and particles remaining inside the chamber absorb radicals in the process and cause processing failure of the substrate.

To prevent this, a process of periodically cleaning the chamber inner wall and the baffle is required. The process of cleaning the chamber inner wall and the baffle forms a plasma using a fluorine-based gas in a remote plasma apparatus and then provides it inside the chamber to remove particles of the oxidative polymer component. However, plasma using fluorine-based gas has very high radical activity, causing damage to the chamber and baffle. As a result, the replacement cycle of the chamber and the baffle is shortened, and foreign substances due to the damage of the chamber and the baffle are attached to the substrate, causing the substrate to be defective.

An object of the present invention is to provide a substrate processing apparatus capable of improving the cleaning efficiency.

It is also an object of the present invention to provide a method for cleaning the substrate processing apparatus described above.

A substrate processing apparatus according to one feature for realizing the object of the present invention described above includes a chamber, a support member, and a water vapor supply unit.

The chamber provides a process space in which the processing of the substrate takes place. A support member is provided in the process space and the substrate is seated. The steam supply includes a steam supply for supplying steam to the chamber to clean the interior of the chamber.

Specifically, the steam supply unit includes a steam generator and a steam supply pipe. The steam generator generates the steam, and a steam supply pipe is connected to the chamber to provide the steam from the steam generator to the chamber.

The steam generator may include a first container and a heating member. The first vessel stores ultrapure water and is connected with the steam supply pipe. The heating member heats the first container.

The steam generator may include a second vessel, an ignition coil, an oxygen supply pipe, and a hydrogen supply pipe. The second container has the steam formed therein, and is connected to the steam supply pipe. An ignition coil is installed in the second container to generate a spark. An oxygen supply pipe is connected to the second vessel to provide oxygen gas to the second vessel. A hydrogen supply line is connected to the second vessel to provide hydrogen gas to the second vessel.

On the other hand, the substrate processing apparatus includes a cover and a plasma generating unit. The cover is provided at the upper portion of the chamber to engage with the upper end of the chamber and seal the inside of the chamber. The plasma generating unit is coupled to an upper surface of the cover, and generates a plasma for processing the substrate and provides the plasma to the process space.

In addition, a substrate processing apparatus cleaning method according to one feature for realizing the above object of the present invention is as follows.

First, the substrate is taken out from the chamber in which the substrate is processed. Water vapor is generated and the water vapor is used to remove particles remaining inside the chamber.

Specifically, the process of removing the particles is as follows. First, the water vapor is provided inside the chamber. Then, purge gas is provided inside the chamber to discharge the particles.

The removing of the particles may further include providing a plasma generated using a fluorine-based gas into the chamber.

According to the present invention described above, the substrate processing apparatus cleans the inside of the chamber using water vapor. Accordingly, the chamber inner wall can be cleaned without damaging the chamber, thereby prolonging the replacement cycle of the chamber, improving the cleaning efficiency, and preventing the defect of the substrate.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

Hereinafter, a plasma etching apparatus will be described as an example, but the present invention can be applied to various semiconductor processing apparatuses including a deposition apparatus.

1 illustrates a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1, the substrate processing apparatus 501 of the present invention includes a processing unit 100, a plasma generating unit 200, first and second exhaust pipes 310 and 320, and a steam generating unit 400.

The processing unit 100 is a substrate processing step using a plasma, the plasma generating unit 200 generates a plasma required for the processing step of the substrate and provides it to the processing unit 100. The first and second exhaust pipes 310 and 320 discharge the gas and the reaction by-products inside the processing unit 100 to the outside and adjust the internal pressure of the processing unit 100.

In detail, the processing unit 100 includes a chamber 110, a chuck 120, a baffle 130, and a cover 140.

The chamber 110 provides a process space PS in which a process of processing the substrate is performed, and first and second exhausts communicating with the first and second exhaust pipes 310 and 320 on the bottom surface 111, respectively. Holes 111a and 111b are formed. During the processing of the substrate, the chamber 110 is grounded.

The chuck 120 is installed in the process space PS and supports the substrate during the substrate processing.

The baffle 130 and the cover 140 are provided on the chuck 120. The baffle 130 is coupled to an upper end of the chamber 110 and faces the chuck 120. The baffle 130 is grounded to filter the plasma generated from the plasma generation unit 200, and mainly passes through the radicals of the plasma to provide the process space PS.

The cover 140 is provided on the chamber 110 and the baffle 130, and is coupled to the chamber 110 to seal the process space PS. In addition, the cover 140 is coupled to the plasma generating unit 200, the inlet 141 is introduced to the plasma from the plasma generating unit 200 is formed. An induction space GS is formed in the cover 140 to provide the baffle 130 with the plasma introduced through the inlet 141. In one example of the invention, the induction space GS is formed in an inverted funnel shape.

The plasma generating unit 200 is installed above the cover 140. The plasma generating unit 200 includes a magnetron 210, a waveguide 220, first and second gas supply pipes 231 and 233, a plasma source unit 240, and an inlet pipe 250.

In detail, the magnetron 210 generates microwaves for plasma generation, and the waveguide 220 guides the microwaves generated by the magnetron 210 to the plasma source unit 240. The first gas supply pipe 231 is connected to the plasma source unit 240 and supplies a first processing gas to the plasma source unit 240. Here, the first processing gas includes at least one of nitrogen, hydrogen, and ammonia.

In the plasma source unit 240, the plasma is generated by the first processing gas from the first gas supply pipe 231 and the microwaves from the magnetron 210.

The plasma source unit 240 is connected to the input end of the inlet pipe 250, the output end of the inlet pipe 250 is coupled to the upper surface of the cover 140 is in communication with the inlet 141. The plasma generated by the plasma source unit 240 is provided to the induction space GS through the inlet pipe 250, and is provided to the process space PS through the baffle 130.

In addition, the inlet pipe 250 is connected to the second gas supply pipe 233. The output end of the second gas supply pipe 233 is coupled to the side of the inlet pipe 250, and provides a second processing gas to the inlet pipe 250 to generate radicals of the plasma generated in the plasma source part 240. Adjust the rate of production. In one example of the invention, the second processing gas comprises at least one of fluorine, hydrogen chloride, boron chloride, hydrogen bromide, and chlorine trifluoride.

The plasma generating unit 200 may further include a third gas supply pipe 235 which provides a cleaning gas for cleaning the inside of the chamber 110. The third gas supply pipe 235 is connected to the plasma source unit 240, and the cleaning gas removes particles attached to the inner wall of the chamber 110 and the baffle 130 during processing of the substrate. Fluorine-based gas may be used as the cleaning gas.

Meanwhile, the first and second exhaust pipes 310 and 320 are installed below the chamber 110. The first and second exhaust pipes 310 and 320 are coupled to the bottom surface 111 of the chamber 110 to form first and second exhaust holes 111a and 111b formed in the bottom surface 111 of the chamber 110. ) Are respectively communicated with each other, and the gas introduced into the process space PS and the process by-products generated in the process are discharged to the outside. The first and second exhaust pipes 310 and 320 are connected to an external pressure regulator (not shown), and the pressure of the process space is adjusted through the first and second exhaust pipes 310 and 320.

In this embodiment, the substrate processing apparatus 501 includes two exhaust pipes 310 and 320, but the number of the exhaust pipes 310 and 320 may increase or decrease according to the size of the chamber 110. have.

The plasma generating unit 200 is connected to the steam generating unit 401, and the steam generating unit 401 provides water vapor to the process space PS, thereby forming an inner wall of the chamber 110 and the baffle 130. Remove particles attached to it.

Hereinafter, the steam generating unit 401 will be described in detail with reference to the accompanying drawings.

2 is a view showing a steam generating unit shown in FIG.

1 and 2, the steam generating unit 401 includes a steam generating unit 410, a steam supply pipe 420, an adjustment balance 430, and an ultrapure water supply pipe 440.

Specifically, the steam generator 410 includes a first container 411 for storing ultrapure water, and a heater 413 for heating the first container 411. The heater 413 is installed on an outer wall of the first container 411 to heat ultrapure water in the first container 411, whereby the water vapor is formed inside the first container 411.

In this embodiment, the steam generating unit 401 generates steam using ultrapure water, but may use pure water.

The first container 411 is connected to the steam supply pipe 420 and the ultrapure water supply pipe 440. The ultrapure water supply pipe 440 provides the ultrapure water to the first vessel 411, and the water vapor supply pipe 420 is connected to the side of the inlet pipe 250. The water vapor in the first container 411 flows into the induction space GS through the water vapor supply pipe 420 and the inflow pipe 250 and enters the process space PS via the baffle 130. Is provided. In general, the particles attached to the inner wall of the chamber 110 and the baffle 130 are made of a water-soluble oxide. Accordingly, since the bonding with the chamber 110 or the baffle 130 is reduced by melting by the water vapor, the substrate processing apparatus 501 may remove particles inside the chamber 110.

Meanwhile, the control valve 430 is installed in the steam supply pipe 420, and the control valve 430 adjusts the amount of water vapor provided to the chamber 110.

3 is a view showing another example of the steam generating unit shown in FIG.

Referring to FIG. 3, the steam generating unit 402 includes a second container 450, an ignition coil 460, a hydrogen supply pipe 471, an oxygen supply pipe 473, a steam supply pipe 420, and a control valve 430. Include.

In detail, the second container 450 provides a space in which the water vapor is formed, and the ignition coil 460 is installed in the second container 450. The hydrogen supply pipe 471 is combined with the second container 450 to provide the hydrogen gas to the second container 450, and the oxygen supply pipe 473 is combined with the second container 450 to provide the hydrogen gas. The oxygen gas is provided to the second container 450.

When a spark is generated in the ignition coil 460 while the hydrogen gas and the oxygen gas are injected into the second container 450, the hydrogen gas reacts with the oxygen gas to form water vapor. Water vapor generated through the flame reaction is provided to the inlet pipe 250 (see FIG. 1) through the steam supply pipe 420 connected to the second vessel 450. Since the steam supply pipe 420 and the control valve 430 are the same as the steam supply pipe 420 and the control valve 430 shown in FIG. 2, reference numerals will be given together and detailed description thereof will be omitted.

Hereinafter, a process of removing particles in the chamber 110 will be described in detail with reference to the accompanying drawings.

4 is a flowchart illustrating a cleaning method of the substrate processing apparatus shown in FIG. 1.

Referring to FIGS. 1 and 4, first, a substrate subjected to plasma treatment by the first and second processing gases is taken out from the chamber 110 (step S110).

The steam generating unit 401 generates steam for cleaning the inside of the chamber 110 (step S120). As shown in FIG. 2, the water vapor may be generated by heating the ultrapure water, and as shown in FIG. 3, may be generated through a flame reaction using oxygen gas and hydrogen gas.

In a state where a substrate is not loaded on the chuck 120, the inside of the chamber 110 is cleaned using the water vapor (S130).

FIG. 5 is a flowchart illustrating a cleaning method inside a chamber using water vapor shown in FIG. 4.

1 and 5, first, the steam generating unit 401 provides the generated steam to the inlet pipe 250 through the steam supply pipe 420, the steam is the inlet pipe 250 Through the cover 140, that is, introduced into the guide space (GS). Water vapor introduced into the induction space GS is provided to the baffle 130 and flows into the process space PS via the baffle 130 (step S131).

The water vapor introduced into the induction space GS and the process space PS melts particles remaining in the induction space GS and the process space PS. Accordingly, particles attached to the inner wall of the chamber 110 and the baffle 130 are separated and removed from the chamber 110 and the baffle 130 or the bonding force between the chamber 110 and the baffle 130. Is reduced.

When the water vapor is provided to the chamber 110 for a predetermined time, the water vapor supply is stopped and the purge gas is supplied to the chamber 130 to discharge particles inside the chamber 110 to the outside (step) S133).

In one example of the present invention, the purge gas is supplied from the first gas supply pipe 231 and is introduced into the induction space GS via the plasma source unit 240 and the inlet pipe 250. Here, the purge gas is supplied for a predetermined time. The purge gas introduced into the induction space GS is provided to the process space PS via the baffle 130 and the first and second exhaust pipes installed in the bottom surface 111 of the chamber 110. 310 and 320 are exhausted. Particles remaining in the induction space GS and the process space PS are separated from the chamber 110 and the baffle 130 by the purge gas, and together with the purge gas, the first and second exhaust pipes. Discharge through 310, 320. As a result, the inside of the chamber 110 is cleaned.

In one example of the present invention, the step of supplying the steam (S131) and the step of supplying the purge gas (S133) are alternately repeated a predetermined number of times. This shortens the washing time and improves the washing efficiency.

As described above, the substrate processing apparatus 501 removes particles remaining therein by using water vapor. Accordingly, the inside of the chamber 110 may be cleaned without damaging the chamber 110 and the baffle 130, extending the replacement cycle of the chamber 110 and the baffle 130, and damaging the substrate. Can be prevented and the yield of the product can be improved.

In addition, the method of cleaning the inside of the chamber 110 may further include the step of removing the particles by supplying a fluorine-based cleaning gas (S135).

Looking at the step (S135) of removing the particles by supplying the cleaning gas in detail, first, the cleaning gas from the third gas supply pipe 235 is supplied to the plasma source unit 240, the magnetron 210 Microwaves are generated. The microwave is guided to the plasma source unit 240 through the waveguide 220, the plasma is generated in the plasma source unit 240 by the microwave and the cleaning gas.

The cleaning plasma generated in this way is introduced into the induction space GS through the induction pipe 250 and is introduced into the process space PS via the baffle 130. The cleaning plasma reacts with particles remaining in the induction space GS and the process space PS to separate and remove particles from the chamber 110 and the baffle 130.

As described above, in the cleaning of the inside of the chamber 110 (S130), the inner wall of the chamber 110 and the baffle 130 are cleaned using steam, purge gas, and fluorine-based cleaning gas. Accordingly, the cleaning efficiency of the substrate processing apparatus 501 is improved, the time for removing particles by using the cleaning gas is shortened, the cleaning efficiency is improved, and the damage of the chamber 110 and the baffle 130 is prevented. prevent.

In one example of the present invention, the particle removal step (S135) using the cleaning gas is provided after the step (S133) of providing the purge gas, the order may be changed.

In addition, as an example of the present invention, the step of cleaning the inside of the chamber 110 (S130), the step of supplying water vapor (S131) and the step of supplying the purge gas (S133) and the particle removal step using the cleaning gas Step combinations each including at least two or more steps of S135 are configured, and the step combinations are alternately repeated a predetermined number of times. As a result, the cleaning efficiency of the substrate processing apparatus 501 is improved.

In one example of the present invention, the chamber 110 maintains a vacuum while the inside of the chamber 110 is cleaned (S120).

6 illustrates a substrate processing apparatus according to another embodiment of the present invention.

Referring to FIG. 6, the substrate processing apparatus 502 of the present invention includes a processing unit 100, a plasma generating unit 200, and first and second exhaust pipes 310 and 320. The processing unit 100, the plasma generating unit 200, and the exhaust pipes 310 and 320 may include the processing unit 100, the plasma generating unit 200, and the first and second exhaust pipes 310 shown in FIG. 1. And 320, the same reference numerals are used and the detailed description thereof will be omitted.

In detail, the processing unit 100 includes a chamber 110 in which a substrate is processed using plasma, a chuck 120 on which the substrate is seated, a baffle 130 for filtering the plasma, and the chamber 110. It includes a cover 140 for sealing the inside.

The plasma generating unit 200 is installed above the cover 140. The plasma generating unit 200 includes a magnetron 210, a waveguide 220, first and second gas supply pipes 231 and 233, a plasma source unit 240, and an inlet pipe 250, and the plasma Produce it and provide it to the chamber 110.

In addition, the plasma generating unit 200 generates water vapor for cleaning the inside of the chamber 110 and provides it to the chamber. Specifically, the first gas supply pipe 231 supplies oxygen gas and hydrogen gas to the plasma source unit 240. The magnetron 210 generates microwaves, and the microwaves are guided to the plasma source unit 240 through the waveguide 220.

The plasma is generated in the plasma source unit 240 by the oxygen, hydrogen gas, and microwave, and water vapor is generated by the generated plasma. The water vapor generated by the plasma source unit 240 is introduced into the induction space GS of the cover 140 through the induction pipe 250, and the water vapor of the induction space GS opens the baffle 130. The gas flows into the process space PS of the chamber 110. Water vapor introduced into the induction space GS and the process space PS separates and removes particles attached to the inner wall of the chamber 110 and the baffle 130.

The particles separated in this way are discharged to the outside through the first and second exhaust pipes 310 and 320 connected to the bottom surface 111 of the chamber 110.

As such, the substrate processing apparatus 502 forms water vapor using plasma, and removes particles attached to the chamber 110 and the baffle 130 using water vapor. Accordingly, the substrate processing apparatus 502 may clean the inside of the chamber 110 without damaging the chamber 110 and the baffle 130, and extend the replacement cycle of the chamber 110 and the baffle 130. It is possible to prevent the defect of the substrate, to improve the yield of the product, and to improve the cleaning efficiency.

FIG. 7 is a flowchart illustrating a cleaning method of the substrate processing apparatus shown in FIG. 6.

6 and 7, first, the substrate processed by the plasma is taken out from the chamber 110 (step S210).

Oxygen gas and hydrogen gas are provided to the plasma source unit 240 through the first gas supply pipe 231 (step S220).

Plasma is generated in the plasma source unit 240 by oxygen and hydrogen gas, and water vapor is generated by the generated plasma (step S230).

That is, microwaves generated from the magnetron 210 are guided to the plasma source unit 240 through the waveguide 220, and plasma is generated in the plasma source unit 240 by oxygen and hydrogen gas and microwaves. do. By the generated plasma, water vapor is generated in the plasma source unit 240.

The plasma source unit 240 provides the water vapor to the chamber 110 through the induction pipe 250, and the inside of the chamber 110 is cleaned by the water vapor (step S240). Here, the step (S240) of cleaning the inside of the chamber 110 using the water vapor is the same as the step of cleaning the interior of the chamber 110 (S130) shown in FIG. 5, and a detailed description thereof will be omitted.

Although described with reference to the above embodiments, those skilled in the art will understand that various modifications and changes can be made without departing from the spirit and scope of the invention as set forth in the claims below. Could be.

1 illustrates a substrate processing apparatus according to an embodiment of the present invention.

2 is a view showing a steam generating unit shown in FIG.

3 is a view showing another example of the steam generating unit shown in FIG.

4 is a flowchart illustrating a cleaning method of the substrate processing apparatus shown in FIG. 1.

FIG. 5 is a flowchart illustrating a cleaning method inside a chamber using water vapor shown in FIG. 4.

6 illustrates a substrate processing apparatus according to another embodiment of the present invention.

FIG. 7 is a flowchart illustrating a cleaning method of the substrate processing apparatus shown in FIG. 6.

Explanation of symbols on the main parts of the drawings

100: processing unit 200: plasma generating unit

310, 320: exhaust pipe 401, 402: steam generating unit

501, 502: substrate processing apparatus

Claims (18)

delete delete A chamber providing a process space in which a substrate processing process is performed; A support member provided in the process space and on which the substrate is mounted; And A steam supply for providing steam to the chamber, The steam supply unit, A steam generator for generating the steam; And A steam supply pipe connected to the steam generator and the chamber to supply the steam from the steam generator to the chamber, The steam generator, A first vessel storing ultrapure water and connected to the steam supply pipe; And And a heating member for heating the first container. A chamber providing a process space in which a substrate processing process is performed; A support member provided in the process space and on which the substrate is mounted; And A steam supply for providing steam to the chamber, The steam supply unit, A steam generator for generating the steam; And A steam supply pipe connected to the steam generator and the chamber to supply the steam from the steam generator to the chamber, The steam generator, A second container in which the steam is formed and connected to the steam supply pipe; An ignition coil installed in the second container to generate a flame; An oxygen supply pipe connected to the second container to provide oxygen gas to the second container; And And a hydrogen supply pipe connected to the second vessel for providing hydrogen gas to the second vessel. The method according to claim 3 or 4, A cover provided at an upper portion of the chamber and coupled to an upper end of the chamber to seal the inside of the chamber; And And a plasma generating unit coupled to an upper surface of the cover and generating a plasma for processing the substrate and providing the plasma to the process space. The method of claim 5, The cover is formed with an inlet through which the plasma is introduced, The plasma generating unit includes a plasma source unit for receiving the reaction gas to generate the plasma, and an inlet tube communicating with the plasma source unit and the inlet, And the steam supply pipe is connected to the plasma generation unit. The method of claim 6, wherein the plasma generating unit, And a gas supply pipe for providing a purge gas for discharging the particles inside the chamber. The method of claim 6, The plasma generation unit further includes a cleaning gas supply pipe connected to the plasma source unit and providing a cleaning gas for cleaning the inside of the chamber. And the cleaning gas contains fluorine. The method of claim 6, And a filtration member installed at the upper end of the chamber to face the support member and to filter the plasma provided from the plasma generation unit. Withdrawing the substrate from the chamber in which the substrate is processed; Generating plasma using oxygen gas and hydrogen gas to generate water vapor; And And removing the particles remaining inside the chamber by using the water vapor. The method of claim 10, wherein removing the particles, Providing the steam inside the chamber; And Providing a purge gas into the chamber to discharge the particles. The method of claim 11, wherein the removing of the particles comprises alternately repeating the providing of water vapor and providing the purge gas by a predetermined number of times. The method of claim 10, wherein removing the particles comprises: And providing a plasma generated by using a fluorine-based gas inside the chamber. delete The method of claim 10, The treatment of the substrate is a treatment using plasma, and the plasma for generating the steam is generated through the same apparatus as the plasma for the treatment of the substrate. The method of claim 10, wherein the chamber maintains a vacuum while removing particles. The method of claim 10, wherein the particle is an oxide. The substrate processing apparatus cleaning method according to claim 10, wherein the substrate processing in the chamber is an oxide film etching process using plasma.

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