JPH0936096A - Reaction chamber cleaning method of semiconductor processing equipment and reaction chamber exhaustion method - Google Patents
Reaction chamber cleaning method of semiconductor processing equipment and reaction chamber exhaustion methodInfo
- Publication number
- JPH0936096A JPH0936096A JP20153795A JP20153795A JPH0936096A JP H0936096 A JPH0936096 A JP H0936096A JP 20153795 A JP20153795 A JP 20153795A JP 20153795 A JP20153795 A JP 20153795A JP H0936096 A JPH0936096 A JP H0936096A
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- Prior art keywords
- reaction chamber
- gas
- deposit
- cleaning
- manufacturing apparatus
- Prior art date
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- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体製造装置の
反応室クリーニング方法及び反応室排気方法に関し、特
にハロゲンガスを使用してドライエッチングを行う半導
体製造装置の反応室クリーニング方法及び反応室排気方
法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reaction chamber cleaning method and a reaction chamber exhaust method for a semiconductor manufacturing apparatus, and more particularly to a reaction chamber cleaning method and a reaction chamber exhaust method for a semiconductor manufacturing apparatus in which dry etching is performed using a halogen gas. It is about.
【０００２】[0002]
【従来の技術】半導体デバイスの高密度化に伴って配線
技術は、益々微細化の方向に進んでおり、半導体集積回
路の製造プロセスにおける配線加工技術の占める比重も
益々大きくなりつつある。2. Description of the Related Art As the density of semiconductor devices has increased, wiring technology has become more and more miniaturized, and the weight of wiring processing technology in the manufacturing process of semiconductor integrated circuits is also increasing.
【０００３】半導体デバイスの製造装置においては、配
線の微細化を達成するために、様々な工夫が試みられて
おり、最近は配線の側壁に保護膜を堆積させながら、加
工を行う技術が主流になっている。この側壁保護膜に
は、加工すべき膜との反応性を利用したものや、レジス
トからの分解物、プラズマ中で分解したイオンやラジカ
ル再結合を利用したものなどがある。In a semiconductor device manufacturing apparatus, various measures have been attempted in order to achieve miniaturization of wiring, and recently, a technique for processing while depositing a protective film on the side wall of the wiring has become mainstream. Has become. The side wall protective film includes a film utilizing reactivity with a film to be processed, a decomposed product from a resist, and a film utilizing recombination of ions and radicals decomposed in plasma.
【０００４】しかし、側壁保護膜、特にハロゲン化物を
含んだ側壁保護膜は、加工すべき半導体装置ばかりでは
なく、製造装置の反応室内にも堆積するから、側壁保護
膜を利用することによって反応室内に堆積物が発生する
と云う問題がある。反応室内に堆積物の発生が発生する
と、加工の終点検出が安定して行われなくことがなり、
また定期的なクリーニングの頻度を増加しなければなら
なくなる。例えば、ハロゲンを使用してドライエッチン
グを行う半導体製造装置では、反応室内にハロゲンを含
んだ堆積物が発生する。この堆積物は主に配線材料とハ
ロゲンが反応した物質であり、Ｓｉx Ｃｌy Ｂｒz （x,
y,z は任意の整数）やＡｌx Ｃｌy Ｂｒz （x,y,z は任
意の整数数）のように記述することができる。However, the side wall protective film, particularly the side wall protective film containing a halide, is deposited not only in the semiconductor device to be processed but also in the reaction chamber of the manufacturing apparatus. There is a problem that deposits occur in the area. If deposits occur in the reaction chamber, the end point of processing will not be detected stably,
In addition, the frequency of regular cleaning will have to be increased. For example, in a semiconductor manufacturing apparatus that uses halogen for dry etching, a deposit containing halogen is generated in the reaction chamber. This deposit is mainly a substance in which the wiring material and halogen have reacted, and Six Cly Brz (x,
y, z can be any integer) or Alx Cly Brz (x, y, z is any integer).
【０００５】図２はプラズマによるドライエッチング装
置の従来例を示している。ドライエッチング装置は、反
応室１内に上部電極２と下部電極３とを有し、上部電極
２と下部電極３との間には、ＲＦ電源４からブロッキン
グコンデンサ５を介して高圧の高周波電圧が印加され
る。反応室１には真空排気通路６と複数個のガスライン
７とが接続されており、真空排気通路６に接続された図
示されていない真空装置が反応室１内の真空引きを行
い、ガスライン７が各々図示されていない各種のガス供
給現から各種の反応ガスを反応室１へ供給する。ガスラ
イン７の各々には流量制御弁８が接続されており、流量
制御弁８は反応室１に供給する反応ガスの流量を定量的
に制御する。FIG. 2 shows a conventional dry etching apparatus using plasma. The dry etching apparatus has an upper electrode 2 and a lower electrode 3 in a reaction chamber 1, and a high-frequency high-frequency voltage is applied between an upper electrode 2 and a lower electrode 3 from an RF power source 4 via a blocking capacitor 5. Is applied. A vacuum exhaust passage 6 and a plurality of gas lines 7 are connected to the reaction chamber 1, and a vacuum device (not shown) connected to the vacuum exhaust passage 6 evacuates the reaction chamber 1 to generate a gas line. 7 supplies various reaction gases to the reaction chamber 1 from various gas supply sources (not shown). A flow rate control valve 8 is connected to each of the gas lines 7, and the flow rate control valve 8 quantitatively controls the flow rate of the reaction gas supplied to the reaction chamber 1.
【０００６】このドライエッチング装置では、下部電極
３上にウェハをセットした後、反応室１内を真空排気
し、各ガスライン７より反応ガスを供給しながら、圧力
を一定に保持する。この状態で、下部電極３と上部電極
２の間に高周波電圧を印加して電極間で放電させ、ガス
を励起させることによって、エッチングを行う。In this dry etching apparatus, after the wafer is set on the lower electrode 3, the inside of the reaction chamber 1 is evacuated and the pressure is kept constant while supplying the reaction gas from each gas line 7. In this state, a high frequency voltage is applied between the lower electrode 3 and the upper electrode 2 to cause a discharge between the electrodes to excite a gas, thereby performing etching.
【０００７】従来、上述のようなドライエッチング装置
の反応室のクリーニング、即ち堆積物の除去は、一般
に、ドライエッチング加工に使用するガスと同じハロゲ
ンを含んだＣｌ2 やＳＦ6 などガスを使用してプロセス
条件を最適化し、スパッタリングによって堆積物を物理
的に分解、除去するプラズマクリーニングにより行われ
ている。Conventionally, the cleaning of the reaction chamber of the dry etching apparatus as described above, that is, the removal of deposits, generally uses a gas such as Cl 2 or SF 6 containing the same halogen as the gas used for the dry etching process. The process conditions are optimized by plasma cleaning, and the deposit is physically decomposed and removed by sputtering.
【０００８】[0008]
【発明が解決しようとする課題】スパッタリングによる
プラズマクリーニングは、そのプロセス条件の最適化が
難しく、また堆積物を完全に除去することが非常に難
い。特にハロゲンを含んだガスを用いている場合は、反
応室を開放する場合に塩化水素や臭化水素が発生し、周
囲に悪影響を及ぼすという問題がある。In plasma cleaning by sputtering, it is difficult to optimize the process conditions, and it is very difficult to completely remove deposits. In particular, when a gas containing halogen is used, there is a problem that hydrogen chloride or hydrogen bromide is generated when the reaction chamber is opened, which adversely affects the surroundings.
【０００９】本発明は、上述の問題点に鑑みてなされた
ものであり、半導体製造の性能を損なうことなく、加工
の終点検出や定期的なクリーニングを効率よく確実に行
うことができる半導体製造装置の反応室クリーニング方
法及び反応室の排気方法を提供することを目的としてい
る。The present invention has been made in view of the above-described problems, and a semiconductor manufacturing apparatus capable of efficiently and reliably detecting the end point of processing and periodic cleaning without impairing the performance of semiconductor manufacturing. It is an object of the present invention to provide a reaction chamber cleaning method and a reaction chamber exhaust method.
【００１０】[0010]
【課題を解決するための手段】上記目的を達成するため
に、本発明による半導体製造装置の反応室クリーニング
方法は、前記反応室のクリーニング時に該反応室を真空
排気するとともに該反応室内に水分を含んだガスを供給
し、前記ガスが含む水分と反応室内の堆積物とを化学反
応させて堆積物を除去することを特徴としている。In order to achieve the above object, a method for cleaning a reaction chamber of a semiconductor manufacturing apparatus according to the present invention is configured such that the reaction chamber is evacuated and moisture is removed during the cleaning of the reaction chamber. It is characterized in that the contained gas is supplied, and the moisture contained in the gas is chemically reacted with the deposit in the reaction chamber to remove the deposit.
【００１１】また、本発明による半導体製造装置の反応
室クリーニング方法は、前記反応室のクリーニング時に
該反応室を真空排気するとともに前記反応室内の堆積物
をスパッタリングにより所定時間分解除去し、しかる
後、前記反応室内に水分を含んだガスを供給し、このガ
スが含む水分と反応室内の残留堆積物とを化学反応させ
て堆積物を除去することを特徴としている。Further, in the reaction chamber cleaning method for a semiconductor manufacturing apparatus according to the present invention, the reaction chamber is evacuated at the time of cleaning the reaction chamber, and the deposits in the reaction chamber are decomposed and removed by sputtering for a predetermined time. A gas containing water is supplied into the reaction chamber, and the water contained in the gas is chemically reacted with the residual deposit in the reaction chamber to remove the deposit.
【００１２】また、本発明による半導体製造装置の反応
室排気方法は、前記反応室を開放する時に、前記反応室
内に水分を含んだガスを供給するとともに該反応室を真
空排気することを特徴としている。The method for exhausting the reaction chamber of the semiconductor manufacturing apparatus according to the present invention is characterized in that, when the reaction chamber is opened, a gas containing water is supplied into the reaction chamber and the reaction chamber is evacuated. There is.
【００１３】本発明による半導体製造装置の反応室クリ
ーニング方法では、半導体製造装置の反応室に水分を含
んだガスを供給することによって、そのガスが含んでい
る水分と反応室内に堆積している堆積物とを化学反応さ
せ、この化学反応をもって堆積物を分解、除去するか
ら、加工の終点検出や定期的なクリーニングを効率よく
行うことができる。In the method for cleaning the reaction chamber of the semiconductor manufacturing apparatus according to the present invention, by supplying a gas containing water to the reaction chamber of the semiconductor manufacturing apparatus, the water contained in the gas and the deposition accumulated in the reaction chamber are deposited. Since a chemical reaction is caused with a substance and the deposit is decomposed and removed by this chemical reaction, the end point of processing and periodical cleaning can be efficiently performed.
【００１４】また、本発明による半導体製造装置の反応
室クリーニング方法では、スパッタリングにより反応室
の堆積物を所定時間分解除去した後、反応室内に水分を
含んだガスを供給し、この水分と反応室内の残留堆積物
との化学反応により、堆積物を分解、除去するから、反
応室のクリーニング時間が短縮され、より効率のよいク
リーニングを確実になし得る。Further, in the method for cleaning a reaction chamber of a semiconductor manufacturing apparatus according to the present invention, after deposits in the reaction chamber are decomposed and removed by sputtering for a predetermined time, a gas containing water is supplied into the reaction chamber, and this water and the reaction chamber are supplied. The chemical reaction with the remaining deposit decomposes and removes the deposit, so that the cleaning time of the reaction chamber is shortened and more efficient cleaning can be ensured.
【００１５】また、本発明による半導体製造装置の反応
室排気方法では、反応室を開放するに際し、反応室内に
水分を含んだガスを供給することにより、そのガス中の
水分が反応室内の堆積物と化学反応して堆積物に含まれ
るハロゲン等の有害物質を揮発させるから、反応室の開
放を短時間で行うことができる。Further, in the method for exhausting the reaction chamber of the semiconductor manufacturing apparatus according to the present invention, when the reaction chamber is opened, a gas containing water is supplied into the reaction chamber, so that the water in the gas causes deposits in the reaction chamber. Since a harmful substance such as halogen contained in the deposit is volatilized by a chemical reaction with, the reaction chamber can be opened in a short time.
【００１６】[0016]
【発明の実施の形態】以下に添付の図を参照して本発明
を実施例について詳細に説明する。なお、本発明の実施
例において上述の従来例と同一構成の部分は、上述の従
来例に付した符号と同一の符号を付してその説明を省略
する。図１は、本発明による半導体製造装置の一実施例
を示している。半導体製造装置はガスラインと一つとし
て、パージライン１０を有しており、パージライン１０
には流量制御弁１１と含水ガス供給装置１２とが接続さ
れている。含水ガス供給装置１２は、空気、あるいは窒
素ガス、アルゴンガスなどの不活性ガスに、例えば１％
程度の水分を添加した含水ガスを生成、供給するもので
あり、この含水ガスは、流量制御弁１１により流量制御
されて反応室１内に供給される。BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described in detail below with reference to the accompanying drawings. In the embodiments of the present invention, the same components as those in the above-described conventional example are designated by the same reference numerals as those in the above-described conventional example, and the description thereof is omitted. FIG. 1 shows an embodiment of a semiconductor manufacturing apparatus according to the present invention. The semiconductor manufacturing apparatus has a purge line 10 as one with the gas line.
A flow control valve 11 and a water-containing gas supply device 12 are connected to the. The water-containing gas supply device 12 uses, for example, 1% of air or an inert gas such as nitrogen gas or argon gas.
A water-containing gas to which a certain amount of water is added is generated and supplied, and the water-containing gas is supplied into the reaction chamber 1 with its flow rate controlled by the flow control valve 11.
【００１７】なお、含水ガス供給装置１２は、大気を直
接供給するものであってもよく、特に水分を添加する機
能を有していないものであってもよい。反応室１に水分
を含んだガスが供給されることにより、そのガスが含ん
でいる水分と反応室１の内壁面や電極表面に堆積してい
る堆積物とが化学反応し、この化学反応により堆積物が
分解除去される。反応室１がハロゲンガスを使用してド
ライエッチングを行う反応室である場合には、堆積物は
主に配線材料とハロゲンが反応した物質、例えばＳｉx
Ｃｌy Ｂｒz であり、この場合には、堆積物と水を反応
させることにより、Ｓｉx ＣｌyＢｒz ＋Ｈ2 Ｏ→Ｓｉ
Ｏ2 ＋ＨＢｒ＋ＨＣｌと云うような化学反応が生じ、堆
積物に含まれているハロゲンが揮発する。The water-containing gas supply device 12 may directly supply the atmosphere, or may not have a function of adding water. By supplying a gas containing water to the reaction chamber 1, the water contained in the gas chemically reacts with the deposits deposited on the inner wall surface of the reaction chamber 1 and the electrode surface, and this chemical reaction causes The deposit is decomposed and removed. When the reaction chamber 1 is a reaction chamber in which a halogen gas is used for dry etching, the deposit is mainly a substance obtained by reacting the wiring material with the halogen, for example, Six.
Cly Brz, and in this case, by reacting the deposit with water, Six Cly Brz + H 2 O → Si
A chemical reaction such as O 2 + HBr + HCl occurs, and the halogen contained in the deposit is volatilized.
【００１８】以下に示す条件でエッチングを５００スラ
イス行い、この後に通常のチャンバクリーニング（スパ
ッタリング）を以下に示す条件で１時間行い、反応室を
開放し、大気−真空を繰り返しながら、水分を含んだガ
スとして大気を２０分導入した。 エッチング条件： 反応ガス；Ｃｌ2 ／ＨＢｒ＝３５／１５ｓｃｃｍ 圧力＝３ｍＴ、ＲＦ出力＝１０Ｗ、温度＝７０℃、時間
＝１分 クリーニング条件： 反応ガス；ＳＦ6 ／Ｏ2 ＝２００／５０ｓｃｃｍ 圧力＝８５ｍＴ、ＲＦ出力＝１１００Ｗ、温度＝７０℃ 結果として、通常のチャンバクリーニング、即ちスパッ
タリングを１時間行った時点では、反応室よりＨＢｒガ
スが５ｐｐｍ検出されたのに対し、その後の水分を含ん
だガスを使用した２０分のサイクルパージでも全くＨＢ
ｒ、ＨＣｌガスの検出はなかった。Etching was performed for 500 slices under the following conditions, and then normal chamber cleaning (sputtering) was performed for 1 hour under the following conditions, the reaction chamber was opened, and moisture was contained while repeating the atmosphere-vacuum. Atmosphere was introduced as gas for 20 minutes. Etching conditions: reaction gas; Cl2 / HBr = 35/15 sccm pressure = 3 mT, RF output = 10 W, temperature = 70 ° C., time = 1 min Cleaning conditions: reaction gas; SF6 / O2 = 200/50 sccm pressure = 85 mT, RF output = 1100 W, temperature = 70 ° C. As a result, 5 ppm of HBr gas was detected from the reaction chamber at the time of carrying out normal chamber cleaning, that is, sputtering for 1 hour, while the gas containing water after that was used. HB even with minute cycle purge
No r or HCl gas was detected.
【００１９】大気中に含まれる水分量でもこのような効
果が得られたことは、大気より更に水分を多量に含むア
ルゴン等の不活性ガスを用いた新たな含水ガスを生成す
れば、更によりよい効果が期待できることを示唆してい
る。上述の実施例は、あくまでも一例であり、本発明に
よる反応室クリーニング方法が適用される半導体製造装
置は、反応室構成、ガス供給方法、高周波電源の個数、
種類、排気方法などついては特に限定されるものではな
い。上記実施例では、水分を含むガスを反応室のクリー
ニングに適用した場合について説明したが、本発明はこ
れに限らず、反応室で加工された半導体を取り出した
り、未加工の半導体を反応室内にセットしたりする時に
反応室を開放する場合は、水分を含んだ大気または所定
量の水分を含ませたアルゴン等のガス反応室に供給しな
がら真空排気し、これによりガス中の水分と反応室の堆
積物とを化学反応させることにより堆積物に含まれるハ
ロゲン等を揮発させ、このハロゲン化物等を効率よく除
去することにより、反応室の開放を短時間に行うことが
できる。This effect was obtained even with the amount of water contained in the atmosphere. The fact that a new water-containing gas using an inert gas such as argon containing a larger amount of water than that of the atmosphere produces even more results It suggests that a good effect can be expected. The above-described embodiments are merely examples, and the semiconductor manufacturing apparatus to which the reaction chamber cleaning method according to the present invention is applied has a reaction chamber configuration, a gas supply method, the number of high frequency power supplies,
The type and exhaust method are not particularly limited. In the above embodiment, the case where the gas containing water is applied to the cleaning of the reaction chamber has been described, but the present invention is not limited to this, and the semiconductor processed in the reaction chamber is taken out or the unprocessed semiconductor is placed in the reaction chamber. When opening the reaction chamber when setting it, evacuation is performed while supplying it to the atmosphere containing water or a gas reaction chamber such as argon containing a predetermined amount of water, which allows the water in the gas and the reaction chamber to be exhausted. The halogen and the like contained in the deposit are volatilized by chemically reacting with the deposit, and the halide and the like are efficiently removed, so that the reaction chamber can be opened in a short time.
【００２０】[0020]
【発明の効果】以上説明したように本発明による半導体
製造装置の反応室クリーニング方法によれば、半導体製
造装置の反応室に水分を含んだガスを供給することによ
って、そのガスが含んでいる水分と反応室内に堆積して
いる堆積物とを化学反応させ、この化学反応をもって堆
積物を分解、除去するから、加工の終点検出や定期的な
クリーニングを効率よく行うことができ、また、ロット
処理間のクリーニング時間も短縮可能になる。また、本
発明による半導体製造装置の反応室クリーニング方法に
よれば、スパッタリングにより反応室の堆積物を所定時
間分解除去した後、反応室内に水分を含んだガスを供給
し、この水分と反応室内の残留堆積物との化学反応によ
り、堆積物を分解、除去するから、反応室のクリーニン
グ時間が短縮され、より効率のよいクリーニングを確実
になし得る。また、本発明による半導体製造装置の反応
室排気方法によれば、反応室を開放するに際し、反応室
内に水分を含んだガスを供給することにより、そのガス
中の水分が反応室内の堆積物と化学反応して堆積物に含
まれるハロゲン等の有害物質を揮発させるから、反応室
の開放を短時間で行うことができる。As described above, according to the method for cleaning the reaction chamber of the semiconductor manufacturing apparatus according to the present invention, by supplying the gas containing water to the reaction chamber of the semiconductor manufacturing apparatus, the moisture contained in the gas is supplied. Chemically reacts with the deposit accumulated in the reaction chamber and decomposes and removes the deposit by this chemical reaction, so that the end point of processing and periodic cleaning can be performed efficiently, and lot processing The cleaning time between them can also be shortened. According to the method for cleaning a reaction chamber of a semiconductor manufacturing apparatus according to the present invention, after deposits in the reaction chamber are decomposed and removed by sputtering for a predetermined time, a gas containing water is supplied into the reaction chamber, and the moisture and the inside of the reaction chamber are supplied. Since the deposit is decomposed and removed by the chemical reaction with the residual deposit, the cleaning time of the reaction chamber is shortened, and more efficient cleaning can be ensured. Further, according to the reaction chamber exhaust method of the semiconductor manufacturing apparatus according to the present invention, when the reaction chamber is opened, a gas containing water is supplied into the reaction chamber, so that the water in the gas becomes a deposit in the reaction chamber. Since the harmful substances such as halogen contained in the deposit are chemically reacted to volatilize, the reaction chamber can be opened in a short time.
【図１】本発明による半導体製造装置の一実施例を示す
概略構成図である。FIG. 1 is a schematic configuration diagram showing an embodiment of a semiconductor manufacturing apparatus according to the present invention.
【図２】半導体製造装置の従来例を示す概略構成図であ
る。FIG. 2 is a schematic configuration diagram showing a conventional example of a semiconductor manufacturing apparatus.
１ 反応室 ２ 上部電極 ３ 下部電極 ４ ＲＦ電源 ５ ブロッキングコンデンサ ６ 真空排気通路 ７ ガスライン ８ 流量制御弁 １０ パージライン １１ 流量制御弁 １２ 含水ガス供給装置 DESCRIPTION OF SYMBOLS 1 Reaction chamber 2 Upper electrode 3 Lower electrode 4 RF power supply 5 Blocking condenser 6 Vacuum exhaust passage 7 Gas line 8 Flow control valve 10 Purge line 11 Flow control valve 12 Water-containing gas supply device
Claims (5)
する方法であって、 前記反応室のクリーニング時に該反応室を真空排気する
とともに該反応室内に水分を含んだガスを供給し、 前記ガスが含む水分と反応室内の堆積物とを化学反応さ
せて堆積物を除去する、 ことを特徴とする半導体製造装置の反応室クリーニング
方法。1. A method of cleaning a reaction chamber of a semiconductor manufacturing apparatus, wherein the reaction chamber is evacuated and a gas containing water is supplied into the reaction chamber when the reaction chamber is cleaned. A method for cleaning a reaction chamber of a semiconductor manufacturing apparatus, characterized in that moisture is chemically reacted with a deposit in the reaction chamber to remove the deposit.
する方法であって、前記反応室のクリーニング時に該反
応室を真空排気するとともに前記反応室内の堆積物をス
パッタリングにより所定時間分解除去し、 しかる後、前記反応室内に水分を含んだガスを供給し、
このガスが含む水分と反応室内の残留堆積物とを化学反
応させて堆積物を除去する、 ことを特徴とする半導体製造装置の反応室クリーニング
方法。2. A method for cleaning a reaction chamber of a semiconductor manufacturing apparatus, wherein the reaction chamber is evacuated during cleaning of the reaction chamber, and deposits in the reaction chamber are decomposed and removed by sputtering for a predetermined time, and thereafter, Supplying a gas containing water into the reaction chamber,
A method for cleaning a reaction chamber of a semiconductor manufacturing apparatus, characterized in that the moisture contained in the gas is chemically reacted with the residual deposit in the reaction chamber to remove the deposit.
活性ガスである請求項１または２記載の半導体製造装置
の反応室クリーニング方法。3. The method for cleaning a reaction chamber of a semiconductor manufacturing apparatus according to claim 1, wherein the gas containing water is atmospheric air or an inert gas.
法であって、 前記反応室を開放する時に、前記反応室内に水分を含ん
だガスを供給するとともに該反応室を真空排気する、 ことを特徴とする半導体製造装置の反応室排気方法。4. A method of evacuating a reaction chamber of a semiconductor manufacturing apparatus when the reaction chamber is opened, wherein when the reaction chamber is opened, a gas containing water is supplied into the reaction chamber and the reaction chamber is evacuated. And a method for evacuating a reaction chamber of a semiconductor manufacturing apparatus.
活性ガスである請求項４記載の半導体製造装置の反応室
排気方法。5. The method for exhausting a reaction chamber of a semiconductor manufacturing apparatus according to claim 4, wherein the gas containing water is air or an inert gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20153795A JPH0936096A (en) | 1995-07-14 | 1995-07-14 | Reaction chamber cleaning method of semiconductor processing equipment and reaction chamber exhaustion method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20153795A JPH0936096A (en) | 1995-07-14 | 1995-07-14 | Reaction chamber cleaning method of semiconductor processing equipment and reaction chamber exhaustion method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0936096A true JPH0936096A (en) | 1997-02-07 |
Family
ID=16442698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20153795A Pending JPH0936096A (en) | 1995-07-14 | 1995-07-14 | Reaction chamber cleaning method of semiconductor processing equipment and reaction chamber exhaustion method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0936096A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100924654B1 (en) * | 2008-02-15 | 2009-11-03 | 피에스케이 주식회사 | Substrate processing apparatus and method of cleaning for the same |
| US10903083B2 (en) | 2016-01-13 | 2021-01-26 | Tokyo Electron Limited | Substrate processing method, substrate processing apparatus and substrate processing system |
-
1995
- 1995-07-14 JP JP20153795A patent/JPH0936096A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100924654B1 (en) * | 2008-02-15 | 2009-11-03 | 피에스케이 주식회사 | Substrate processing apparatus and method of cleaning for the same |
| US10903083B2 (en) | 2016-01-13 | 2021-01-26 | Tokyo Electron Limited | Substrate processing method, substrate processing apparatus and substrate processing system |
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