KR19980016134U - Vacuum pump and scrubber integrated semiconductor process equipment - Google Patents
Vacuum pump and scrubber integrated semiconductor process equipment Download PDFInfo
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- KR19980016134U KR19980016134U KR2019960029430U KR19960029430U KR19980016134U KR 19980016134 U KR19980016134 U KR 19980016134U KR 2019960029430 U KR2019960029430 U KR 2019960029430U KR 19960029430 U KR19960029430 U KR 19960029430U KR 19980016134 U KR19980016134 U KR 19980016134U
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- vacuum pump
- scrubber
- vacuum
- process chamber
- process equipment
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- 238000000034 method Methods 0.000 title claims abstract description 47
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 239000006227 byproduct Substances 0.000 claims description 10
- 239000012495 reaction gas Substances 0.000 claims description 5
- 230000010354 integration Effects 0.000 claims description 3
- 238000009825 accumulation Methods 0.000 abstract description 4
- 230000006866 deterioration Effects 0.000 abstract description 3
- 239000000428 dust Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
Abstract
본 고안은 진공 펌프 및 스크러버가 일체화된 반도체 공정용 장비에 관한 것으로 특히, 공정실과 진공 펌프 사이의 진공라인을 두지 않고 일체화 시키어 구성하며 진공 펌프와 스크러버의 사이의 밸브 라인을 두지 않고 일체화 시키어 구성하는 것을 특징으로 하는 진공 펌프 및 스크러버일체형 반도체의 공정 장비를 제공하면, 공정실과 진공 펌프 사이의 누적물로 인한 진공 성능의 저하와 미진의 문제가 발생하지 않는다.The present invention relates to a semiconductor process equipment in which a vacuum pump and a scrubber are integrated. In particular, the vacuum pump and the scrubber are integrated without a vacuum line between the process chamber and the vacuum pump, and the valve line between the vacuum pump and the scrubber is integrated without the vacuum pump and the scrubber. Providing the process equipment of the vacuum pump and the scrubber integrated semiconductor, characterized in that the vacuum performance due to the accumulation between the process chamber and the vacuum pump and the problem of fine dust does not occur.
또한, 진공펌프 및 스크러버 사이의 누적물로 인한 진공성능의 저하의 문제가 발생하지 않는다.In addition, the problem of deterioration of the vacuum performance due to the accumulation between the vacuum pump and the scrubber does not occur.
Description
제1도는 종래 반도체의 공정 장비의 구성 예시도1 is a diagram illustrating a configuration of a process device of a conventional semiconductor
제2도는 본 고안에 따른 진공 펌프 및 스크러버일체형 반도체의 공정 장비의 구성 예시도2 is a view illustrating the configuration of the process equipment of the vacuum pump and the scrubber integrated semiconductor according to the present invention
* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
1 : 공정실2 : 터보펌프1: process room 2: turbo pump
3 : 서브 진공 라인4 : 부스터 펌프3: sub vacuum line 4: booster pump
5 : 오일/건조 펌프6 : 밸브 라인5 oil / dry pump 6 valve line
7 : 스크러버8 : 배출관7: scrubber 8: discharge pipe
9 : 터보/부스터 펌프9: turbo / booster pump
본 고안은 진공 펌프 및 스크러버가 일체화된 반도체 공정용 장비에 관한 것으로 특히, 부산물(Byproduct)이 많이 발생하는 공정에 적당하도록한 반도체 장비 구조에 관한 것이다.The present invention relates to a semiconductor process equipment in which a vacuum pump and a scrubber are integrated, and more particularly, to a semiconductor equipment structure suitable for a process in which many byproducts are generated.
종래에 사용되는 반도체 공정 장비는 첨부한 제1도에 도시되어 있는 바와같이, 반응이 일어나는 공정실(1)의 압력을 낮게 유지시키기 위한 진공 펌프(2, 4, 5)와 그 과정에서 발생하는 부산물의 중간 채집을 위한 스크러버장치(7)로 구성되며, 각각의 연결을 위해 nw-40, 50, 80 등의 서브 진공 라인(3, 6)이 구비되어 있다.Conventionally used semiconductor process equipment includes vacuum pumps 2, 4, and 5 for maintaining the pressure in the process chamber 1 where the reaction takes place, as shown in FIG. It consists of a scrubber device 7 for the intermediate collection of by-products, and is provided with sub-vacuum lines 3 and 6 such as nw-40, 50 and 80 for each connection.
공정실(1)은 반응용 가스가 유입되고, 반응을 위한 전원이 입력된다.The reaction gas flows into the process chamber 1, and a power source for the reaction is input.
공정실(1)과 진공펌프(2, 4, 5) 사이에는 진공펌프(2, 4, 5)를 온/오프시키는 밸브(도시하지 않았음)가 있다.Between the process chamber 1 and the vacuum pumps 2, 4, 5 is a valve (not shown) for turning on / off the vacuum pumps 2, 4, 5.
상기와 같이 구성되는 종래 반도체 공정 장비의 동작을 살펴보면, 공정실(1)내에 목적하는 반응 공정을 이루기 위하여 가스가 유입되며 RF 혹은 마이크로웨이브가 입력되는데, 이때 목적하는 조건에 맞는 반응을 위해 공정실(1)내의 압력을 저압의 진공 영역에서 일정한 압력 상태로 유지시켜야 한다. 이러한 동작을 위해 터보펌프(2)와 부스터펌프(4) 및 오일/건조 펌프(5)로 이루어지는 진공 펌프를 가동시켜 일정한 진공배기 상태를 만든다.Looking at the operation of the conventional semiconductor process equipment configured as described above, the gas is introduced into the process chamber 1 to achieve the desired reaction process and RF or microwave is input, the process chamber for the reaction to meet the desired conditions The pressure in (1) is to be maintained at a constant pressure in the low pressure vacuum region. For this operation, a vacuum pump consisting of a turbo pump 2, a booster pump 4, and an oil / dry pump 5 is operated to create a constant vacuum exhaust state.
공정실(1)내에서 가스는 프라즈마(PLASMA)상태에서 반도체 제조용 웨이퍼를 가공하게 되는데, 연속적으로 가스가 유입되는 가운데 진공펌프(2, 4, 5)는 연속적인 배기 상태를 유지한다.In the process chamber 1, the gas is processed in a plasma manufacturing wafer in a plasma state, and while the gas is continuously introduced, the vacuum pumps 2, 4, and 5 maintain a continuous exhaust state.
이 사이에 도시되어 있지 않은 밸브(ISOLATION VALVE)가 장비의 동작 상태에 따라 진공을 온/오프 시켜주도록 개폐동작을 한다.The valve (ISOLATION VALVE), not shown in the meantime, opens and closes to turn the vacuum on and off according to the operating state of the equipment.
공정실(1)내에서 프라즈마 상태이던 가스와 웨이퍼상에서 식각 배축되던 성분들이 공정실(1)를 벗어나면서 다시 가스상태로 복구되며 일부는 각종의 반응을 일으키어 부산물을 형성하며 누적되게 된다.In the process chamber 1, the gas in the plasma state and the components etched away on the wafer are restored to the gas state again after leaving the process chamber 1, and some of them cause various reactions to form by-products and accumulate.
여기서, 진공펌프(2, 4, 5)까지 통과된 가스 및 식각 성분들이 다시 진공펌프(2, 4, 5)와 스크러버(7)사이에서도 동일한 현상으로 부산물을 형성하여 누적되게 된다.Here, the gas and the etching components passed up to the vacuum pumps 2, 4 and 5 again accumulate by-products in the same phenomenon even between the vacuum pumps 2, 4 and 5 and the scrubber 7.
진공펌프(2, 4, 5)를 통과한 가스 및 식각 성분들은 스크러버(7)로 보내지는데, 여기서는 웨이퍼와 혼합되는 습식스크러버와 고열 및 촉매 작용으로 화학 변화를 일으키는 건식스크로버 등을 통하여 안정된 화합물로 변화한다.The gas and etching components that have passed through the vacuum pumps (2, 4, 5) are sent to the scrubber (7), where the compound is stabilized through a wet scrubber mixed with the wafer and a dry scrubber that causes chemical changes due to high heat and catalysis. To change.
상기와 같은 종래의 반도체의 공정 장비에서는 공정실(1)과 진공펌프(2, 4, 5)사이 또는 펌프(2, 4, 5)와 스크러버(7)사이의 거리가 멀기 때문에 이를 연결시키는 진공라인(3, 6)을 사용하게 되는데, 이때 진공라인(3, 6)에 누적되는 부산물들로 인해 진공율이 저하되어 정상적인 동작에 장애를 주게 된다.In the process equipment of the conventional semiconductor as described above, because the distance between the process chamber 1 and the vacuum pumps (2, 4, 5) or between the pumps (2, 4, 5) and the scrubber (7) is too long to connect the vacuum Lines 3 and 6 are used, whereby by-products accumulated in the vacuum lines 3 and 6 lower the vacuum rate, which impedes normal operation.
상기와 같은 문제점을 해소하기 위한 본 고안의 목적은, 공정실과 진공펌프 사이의 진공라인을 두지 않고 일체화 시키어 구성하며 진공펌프와 스크러버의 사이의 밸브라인을 두지 않고 일체화 시키어 구성하는 진공펌프 및 스크러버일체형 반도체의 공정 장비를 제공하는 데 있다.An object of the present invention for solving the above problems, the vacuum pump and the scrubber integral type configured to integrate without the vacuum line between the process chamber and the vacuum pump, without the valve line between the vacuum pump and the scrubber. It is to provide a process equipment of a semiconductor.
상기와 같은 목적을 달성하기 위한 본 고안의 특징은, 반응용 가스를 입력전원을 통해 프라즈마 형태로 변환하여 웨이퍼와 반응시키는 공정실과의 공기압을 낮게 유지시키기 위한 진공펌프 및 공정실에서 발생하는 부산물이 진공펌프를 통해 배출될 때 중간 채집을 위한 스크러버장치를 구비하고 있는 반도체의 공정 장비에 있어서, 공정실과 진공펌프 사이의 진공라인을 두지 않고 일체화 시키어 구성하며, 진공펌프와 스크러버의 사이의 밸브 라인을 두지 않고 일체화 시키어 구성하는 데 있다.A feature of the present invention for achieving the above object is, by-products generated in the vacuum pump and process chamber to maintain a low air pressure with the process chamber reacting the wafer by converting the reaction gas into a plasma form through the input power source In the process equipment of the semiconductor having a scrubber device for the intermediate collection when discharged through the vacuum pump, the vacuum line between the process chamber and the vacuum pump is configured without integration, and the valve line between the vacuum pump and the scrubber It is to put it together without putting it together.
이하, 첨부한 도면을 참조하여 본 고안에 따른 바람직한 실시예를 설명한다.Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.
제2도는 본 고안에 따른 진공펌프 및 스크러버일체형 반도체의 공정 장비의 구성예로서, 반응용 가스를 입력전원을 통해 프라즈마 형태로 변환하여 웨이퍼와 반응시키는 공정실(1)과, 공정실(1)에 인접하게 구비되며 공정실(1)의 공기압을 낮게 유지시키기 위한 진공펌프(9, 5)와, 진공펌프(9, 5)에 인접하게 구비되며 공정실(1)에서 발생하는 부산물이 진공펌프(9, 5)를 통해 배출될 때 중간 채집을 위한 스크러버장치(7) 및 스크러버장치(7)에서 채집된 부산물의 배출을 위한 배출관(8)으로 구성된다.2 is a configuration example of the process equipment of the vacuum pump and the scrubber integrated semiconductor according to the present invention, the process chamber (1) and the process chamber (1) for converting the reaction gas into a plasma form through an input power source and react with the wafer The vacuum pumps 9 and 5 for keeping the air pressure of the process chamber 1 low and the by-products generated in the process chamber 1 are provided near the vacuum pumps 9 and 5. And a discharge pipe 8 for discharging the by-product collected in the scrubber device 7 and the scrubber device 7 for the intermediate collection when discharged through (9, 5).
상기와 같이 구성되는 본 고안에 따른 진공펌프 및 스크러버일체형 반도체의 공정 장비의 동작을 살펴보면 다음과 같다.Looking at the operation of the process equipment of the vacuum pump and the scrubber integrated semiconductor according to the present invention configured as described above are as follows.
소정의 과정이 진행되는 공정실(1)에 반응용 가스가 공급되고 전원이 공급된다. 이때, 공정실(1)에 바로 연결된 진공펌프(9, 5)가 공정중 일정한 압력이 유지되도록 연속적인 배기 상태를 유지하고 여기서 배출되는 배기 가스를 수집처리하는 스크러버(7)는 진공펌프(9, 5)에 배관의 연결없이 바로 인접한 부근에 위치시킨다.The reaction gas is supplied to the process chamber 1 in which a predetermined process is performed, and power is supplied. At this time, the vacuum pumps 9 and 5 directly connected to the process chamber 1 maintain a continuous exhaust state so that a constant pressure is maintained during the process, and the scrubber 7 collecting and collecting the exhaust gas discharged therein is a vacuum pump 9 , 5) in the immediate vicinity without pipe connection.
그러므로, 공정실(1)에서 공정이 일어나면 바로 연결된 진공펌프(9, 5)로 배기되고, 진공펌프(9, 5)를 통과한 배기 가스는 다시 바로 연결된 스크러버(7)에 도달한다.Therefore, when the process takes place in the process chamber 1, it is exhausted to the vacuum pumps 9 and 5 directly connected, and the exhaust gas passing through the vacuum pumps 9 and 5 reaches the scrubber 7 directly connected again.
스크러버(7)에 유입된 배기 가스는 1차적으로 보다 안전된 화합물로 변화한다. 스크러버(7)를 거친 안정된 가스는 배기 배출관(8)을 통해 배출되거나 스크러버(7)내에 부산물로 축적되어 정기적으로 배출된다.The exhaust gas introduced into the scrubber 7 primarily changes to a safer compound. The stable gas which has passed through the scrubber 7 is discharged through the exhaust discharge pipe 8 or accumulated as a by-product in the scrubber 7 and is periodically discharged.
상기와 같이 구성되는 본 고안에 따른 진공 펌프 및 스크러버일체형 반도체의 공정 장비를 제공하면, 공정실과 진공 펌프 사이의 누적물로 인한 진공 성능의 저하와 미진의 문제가 발생하지 않는다.Providing the process equipment of the vacuum pump and the scrubber integrated semiconductor according to the present invention configured as described above, there is no problem of deterioration of the vacuum performance and fine dust due to the accumulation between the process chamber and the vacuum pump.
또한, 진공펌프 및 스크러버 사이의 누적물로 인한 진공성능의 저하의 문제가 발생하지 않는다.In addition, the problem of deterioration of the vacuum performance due to the accumulation between the vacuum pump and the scrubber does not occur.
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019960029430U KR19980016134U (en) | 1996-09-16 | 1996-09-16 | Vacuum pump and scrubber integrated semiconductor process equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019960029430U KR19980016134U (en) | 1996-09-16 | 1996-09-16 | Vacuum pump and scrubber integrated semiconductor process equipment |
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| Publication Number | Publication Date |
|---|---|
| KR19980016134U true KR19980016134U (en) | 1998-06-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019960029430U KR19980016134U (en) | 1996-09-16 | 1996-09-16 | Vacuum pump and scrubber integrated semiconductor process equipment |
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| Country | Link |
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| KR (1) | KR19980016134U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100809852B1 (en) * | 2007-05-17 | 2008-03-04 | (주)엘오티베큠 | Intergrated apparatus for vacuum producing |
| KR20170105799A (en) | 2016-03-10 | 2017-09-20 | 주식회사 에프에스티 | Gas dissociation system |
-
1996
- 1996-09-16 KR KR2019960029430U patent/KR19980016134U/en not_active Application Discontinuation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100809852B1 (en) * | 2007-05-17 | 2008-03-04 | (주)엘오티베큠 | Intergrated apparatus for vacuum producing |
| KR20170105799A (en) | 2016-03-10 | 2017-09-20 | 주식회사 에프에스티 | Gas dissociation system |
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