KR200184162Y1 - Discharging device for semiconductor dry etcher - Google Patents

Discharging device for semiconductor dry etcher Download PDF

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Publication number
KR200184162Y1
KR200184162Y1 KR2019970039472U KR19970039472U KR200184162Y1 KR 200184162 Y1 KR200184162 Y1 KR 200184162Y1 KR 2019970039472 U KR2019970039472 U KR 2019970039472U KR 19970039472 U KR19970039472 U KR 19970039472U KR 200184162 Y1 KR200184162 Y1 KR 200184162Y1
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exhaust
exhaust pipe
wing
process chamber
dry etching
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KR2019970039472U
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KR19990026918U (en
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김한수
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김영환
현대반도체주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

본 고안에 의한 반도체 건식각장비의 배기장치는 웨이퍼를 식각하는 공정챔버의 일측에 설치하여 공정압력조절 및 공정완료후 배기를 하도록 한 배기관과, 상기 배기관이 일측단부에 설치한 펌프로 구성된 반도체 건식각장비의 배기장치에 있어서, 상기 배기관내에 유동되는 공기가 역류하지 않도록 한 역류방지날개를 상기 배기관의 네 면에 공간상에서 서로 교차하도록 고정 설치하므로, 공정챔버에서 배기된 불순물들이 다시 공정챔버쪽을 일부가 역류되어 발생하는 공정챔버 및 웨이퍼의 오염문제를 해결하고, 펌프의 배기능력을 향상시키도록 하였다.The exhaust device of the semiconductor dry etching apparatus according to the present invention is a semiconductor gun including an exhaust pipe installed at one side of a process chamber for etching a wafer to exhaust the process pressure and exhaust after completion of the process, and a pump installed at one end of the exhaust pipe. In the exhaust device of the etching equipment, the non-return wing which prevents the air flowing in the exhaust pipe from flowing back is fixedly installed on the four sides of the exhaust pipe so as to cross each other in space, so that impurities exhausted from the process chamber are returned to the process chamber. This solves the problem of contamination of the process chamber and wafer caused by the partial backflow and improves the pump exhaust capacity.

Description

반도체 건식각장비의 배기장치Exhaust System of Semiconductor Dry Etching Equipment

본 고안은 반도체 건식각장비의 배기장치에 관한 것으로, 특히 공정챔버에서 배기된 불순물들이 다시 공정챔버쪽을 일부가 역류되어 발생하는 공정챔버 및 웨이퍼의 오염문제를 해결하고, 펌프의 배기능력을 향상시키도록 한 반도체 건식각장비의 배기장치에 관한 것이다.The present invention relates to an exhaust device of a semiconductor dry etching equipment, and in particular, to solve the problem of contamination of the process chamber and wafer caused by the partial backflow of impurities discharged from the process chamber, and to improve the exhaust capacity of the pump. The present invention relates to an exhaust device for a semiconductor dry etching device.

일반적으로 건식각장비의 예로는 플라즈마 식각을 들수 있다. 플라즈마 가스는 전기적 파괴에 의해 생성되며, 가스의 종류에 따라 강한 화학반응을 일으킬 수 있다. 식각될 웨이퍼는 석영보트에 넣어져 반응챔버 안으로 들어간 다음 진공상태로 된다. 반응챔버는 특수기체로 채워지며 적은 양의 산소도 첨가된다. 식각은 알에프(RF)에너지를 기체 혼합물에 가함으로써 시작되는데, 이것은 매우 반응력이 강한 불소화물이 분리되어 나오게 한다. 불소는 거의 대부분의 실리콘 화합물과 반응한다. 높은 알에프 전력의 경우, 식각율은 반응실 안의 반응 압력의 함수이다. 또한 식각율은 한번에 식각되는 웨이퍼의 수 및 웨이퍼와 웨이퍼의 간격에 따라 변한다.In general, an example of dry etching equipment is plasma etching. Plasma gas is generated by electrical breakdown and may cause a strong chemical reaction depending on the type of gas. The wafer to be etched is placed in a quartz boat into the reaction chamber and then evacuated. The reaction chamber is filled with a special gas and a small amount of oxygen is added. Etching begins by adding RF (RF) energy to the gas mixture, which allows very reactive fluoride to separate out. Fluorine reacts with almost all silicon compounds. For high RF power, the etch rate is a function of the reaction pressure in the reaction chamber. The etching rate also varies with the number of wafers etched at one time and the gap between the wafers and the wafers.

최근 건식각장비는 진행공정이 초저압에서 진행되는 추세이며, 대부분의 장비에서 티엠피(TMP ; Turbo Motecular Pump, 이하 펌프라고 함)를 채용하고 있다.Recently, the process of the dry etching equipment is progressing at a very low pressure, and most of the equipment adopts TMP (Turbo Motecular Pump).

종래의 기술에 의한 반도체 건식각장비의 배기장치는 제1도에 도시한 바와 같이, 웨이퍼(W)와, 상기 웨이퍼(W)를 식각하기 위한 공정챔버(1)와. 상기 공정챔버(1)의 일측에 형성한 배기관(2)과, 상기 배기관(2)의 일측단부에 설치한 펌프(3)로 구성된다.The exhaust device of a semiconductor dry etching apparatus according to the related art is a wafer (W), a process chamber (1) for etching the wafer (W), as shown in FIG. It consists of an exhaust pipe 2 formed at one side of the process chamber 1 and a pump 3 provided at one end of the exhaust pipe 2.

이와 같이 구성된 종래의 기술에 의한 반도체 건식각장비의 배기장치의 동작은 다음과 같다.The operation of the exhaust device of the semiconductor dry etching apparatus according to the conventional technology configured as described above is as follows.

제1도는 건식각 장치에서 공정압력조절 및 공정완료후 배기를 위한 펌프(3)의 동작시의 챔버(1)내 배기공기의 흐름을 나타낸 것으로 그림에서와 같이, 공정챔버(1)를 지난 배기공기는 배기관(2)을 통해 이동하게 되고, 상기 배기공기는 배기관(2)의 절곡부를 만나면서(2a) 일부는 펌프(3)에 의해 배출되고 다른 일부는 절곡부(2a)의 배기관 벽면에 부딪혀 역류되게 된다.FIG. 1 shows the flow of exhaust air in the chamber 1 during the operation of the pump 3 for controlling the process pressure and exhausting the process after the completion of the process in the dry etching apparatus. The air moves through the exhaust pipe 2, and the exhaust air meets the bent portion of the exhaust pipe 2 (2a) while part of it is discharged by the pump 3 and the other part hits the exhaust pipe wall of the bent portion 2a. Backflow.

종래의 기술에 의한 반도체 건식각장비의 배기장치는 공정압력조절 및 공정완료후 배기를 위해 펌프(3)동작시 역류를 방지하기 위한 장치가 없어, 공정챔버(1)에서 배기된 불순물들이 다시 공정챔버(1)쪽으로 일부기 역류되어 공정챔버(1) 및 웨이퍼(W)를 오염시키게 되는 문제점이 있다.The exhaust device of the semiconductor dry etching apparatus according to the prior art does not have a device for preventing backflow during the operation of the pump 3 to control the process pressure and exhaust the process, and the impurities exhausted from the process chamber 1 are processed again. There is a problem in that part of the back flow toward the chamber 1 to contaminate the process chamber 1 and the wafer (W).

따라서, 본 고안의 목적은 상기와 같은 문제점을 고려하여 안출한 것으로, 공정챔버에서 배기된 불순물들이 다시 공정챔버쪽을 일부가 역류되어 발생하는 공정챔버 및 웨이퍼의 오염문제를 해결하고, 펌프의 배기능력을 향상시키도록 한 반도체 건식각장비를 제공함에 있다.Accordingly, an object of the present invention is to devise in view of the above problems, to solve the problem of contamination of the process chamber and wafer caused by the impurities backed out of the process chamber back to the process chamber side, the exhaust of the pump To provide semiconductor dry etching equipment to improve the capability.

제1도는 종래의 기술에 의한 반도체 건식각장비의 배기장치를 개략적으로 나타낸 공기흐름도.1 is an air flow diagram schematically showing an exhaust device of a semiconductor dry etching apparatus according to the prior art.

제2도는 본 고안에 의한 반도체 건식각장비의 배기장치를 개략적으로 나타낸 공기흐름도.2 is an air flow diagram schematically showing an exhaust device of a semiconductor dry etching apparatus according to the present invention.

제3도는 본 고안에 의한 배기장치의 역류방지날개를 장착한 배기관을 나타내는 사시도.3 is a perspective view showing an exhaust pipe equipped with a non-return wing of the exhaust device according to the present invention.

제4도는 본 고안에 의한 배기장치의 역류방지날개를 나타내는 정면도.Figure 4 is a front view showing a non-return wing of the exhaust device according to the present invention.

제5도는 본 고안에 의한 배기장치의 역류방지날개를 나타내는 사시도.5 is a perspective view showing a non-return wing of the exhaust device according to the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 공정챔버 2 : 배기관1: process chamber 2: exhaust pipe

3 : 펌프 20 : 역류방지날개3: pump 20: non-return wing

21 : 상측날개 22 : 하측날개21: upper wing 22: lower wing

23 : 좌측날개 24 : 우측날개23: left wing 24: right wing

이러한 본 고안의 목적은 웨이퍼를 식각하는 공정챔버의 일측에 설치하여 공졍압력조절 및 공정완료후 배기를 하도록 한 배기관과, 상기 배기관이 일측단부에 설치한 펌프로 구성된 반도체 건식각장비의 배기장치에 있어서, 상기 배기관내에 유동되는 공기가 역류하지 않도록 한 역류방지날개를 상기 배기관의 네 면에 공간상에서 서로 교차하도록 고정 설치함으로씨 달성된다.The object of the present invention is to provide an exhaust system for semiconductor dry etching equipment, comprising an exhaust pipe installed at one side of a process chamber for etching wafers for exhaust pressure control and exhaust after completion of the process, and a pump installed at one end of the exhaust pipe. In this case, it is achieved by fixing the non-return wing to prevent the air flowing in the exhaust pipe to flow back on the four sides of the exhaust pipe so as to cross each other in space.

이하, 본 고안에 의한 반도체 건식각장비의 배기장치를 첨부도면에 도시한 실시예에 따라서 설명한다.Hereinafter, the exhaust device of the semiconductor dry etching equipment according to the present invention will be described according to the embodiment shown in the accompanying drawings.

제2도는 본 고안에 의한 반도체 건식각장비의 배기장치를 개략적으로 나타낸 공기흐름도이고, 제3도는 본 고안에 의한 배기장치의 역류방지날개를 장착한 배기관을 나타내는 사시도이며, 제4도는 본 고안에 의한 배기장치의 역류방지날개를 나타내는 정면도이고, 제5도는 본 고안에 의한 배기장치의 역류방지날개를 나타내는 사시도를 각각 보인 것이다.2 is an air flow diagram schematically showing the exhaust device of the semiconductor dry etching equipment according to the present invention, Figure 3 is a perspective view showing an exhaust pipe equipped with a non-return wing of the exhaust device according to the present invention, Figure 4 is a It is a front view which shows the non-return wing of the exhaust apparatus by FIG. 5, and FIG. 5 shows the perspective view which shows the non-return wing of the exhaust apparatus by this invention respectively.

이에 도시한 바와 같이 본 고안에 의한 반도체 건식각장비의 배기장치는 웨이퍼(W)를 식각하는 공정챔버(1)의 일측에 설치하여 공정압력조절 및 공정완료후 배기를 하도록 한 배기관(2)과, 상기 배기관(2)이 일측단부에 설지한 펌프(3)로 구성된 반도체 건식각장비의 배기장치에 있어서, 상기 배기관(2)내에 유동되는 공기가 역류하지 않도록 한 역류방지날개(20)를 상기 배기관(2)의 네 면에 공간상에서 서로 교차하도록 고정 설치한다.As shown in the drawing, the exhaust device of the semiconductor dry etching apparatus according to the present invention is installed on one side of the process chamber 1 for etching the wafer W, and the exhaust pipe 2 for controlling process pressure and exhausting the process is completed. In the exhaust device of the semiconductor dry etching equipment consisting of a pump (3) installed on one side end of the exhaust pipe 2, the backflow prevention wing 20 to prevent the air flowing in the exhaust pipe (2) is not flown back The four sides of the exhaust pipe (2) are fixedly installed so as to cross each other in space.

상기 역류방지날개(20)는 배기관(2)의 상하면에 각긱 공간상에서 교차하도록 위치하는 상측날개(21) 및 하측날개(22)와, 상기 배기관의 좌우면에 각각 공간상에서 교차되도록 위치하는 좌측날개(23) 및 우측날개(24)로 구성된다.The reverse flow prevention wing 20 has an upper wing 21 and a lower wing 22 positioned to intersect on the upper and lower surfaces of the exhaust pipe 2 in the respective gig spaces, and a left wing positioned to intersect in the space on the left and right sides of the exhaust pipe, respectively. It consists of 23 and the right wing 24.

이와 같이 구성된 본 고안에 의한 반도체 건식각장비의 배기장치의 작용효과를 설명한다.The operation and effect of the exhaust device of the semiconductor dry etching equipment according to the present invention configured as described above will be described.

상기 공정챔버(1)내에서 웨이퍼(W)를 식각한 다음 펌프(3)의 동작에 의해 배기관(2)을 통해 불순물들을 배기하게 된다. 이때 배기되는 이동공기는 상기 배기관(2)의 일측에 설치한 역류방지날개(20)와 부딪히면서 역류방지날개의 날개들(21), (22), (23), (24)의 위치에 의해 기류방향이 변경되면서, 회전하게 되고, 상기 역류방지날개의 중간부에서는 이동공기의 방향이 방해를 받지 않으며 벤튜리 효과에 의해 유속이 빨라진 상태로 직진하게 되어 전체적으로 소용돌이를 형성하며 빠른 유속을 갖게된다. 따라서 상기 역류방지날개(20)의 날개위치와, 와류의 형태로 배기되는 것에 의해 역류가 방지됨과 아울러, 동일한 용량의 펌프로도 효과적인 배기를 얻을 수 있다.The wafer W is etched in the process chamber 1 and then impurities are discharged through the exhaust pipe 2 by the operation of the pump 3. At this time, the exhaust air is exhausted by the position of the blades 21, 22, 23, and 24 of the countercurrent prevention wing while colliding with the countercurrent prevention wing 20 installed on one side of the exhaust pipe 2. As the direction is changed, the direction of rotation is changed, and the direction of the moving air is not disturbed in the middle portion of the non-return blade and the flow rate is straightened by the Venturi effect to form a vortex as a whole and have a high flow rate. Therefore, the reverse flow is prevented by being exhausted in the form of the wing of the non-return wing 20 and the vortex flow, and an effective exhaust gas can be obtained even with a pump having the same capacity.

이상에서 설명한 바와 같이, 본 고안에 의한 반도체 건식각장비의 배기장치는 웨이퍼를 식각하는 공정챔버의 일측에 설치하여 공정압력조절 및 공정완료후 배기를 하도록 한 배기관과, 상기 배기관이 일측단부에 설치한 펌프로 구성된 반도체 건식각장비의 배기장치에 있어서, 상기 배기관내에 유동되는 공기가 역류하지 않도록 한 역류방지날개를 상기 배기관의 네 면에 공간상에서 서로 교차하도록 고정 설치하므로, 공정챔버에서 배기된 불순물들이 다시 공정챔버쪽을 일부가 역류되어 발생하는 공정챔버 및 웨이퍼의 오염문제를 해결하고, 펌프의 배기능력을 향상시키도록 한 효과가 있다.As described above, the exhaust device of the semiconductor dry etching equipment according to the present invention is installed on one side of the process chamber for etching the wafer to control the process pressure and exhaust after completion of the process, and the exhaust pipe is installed at one end In the exhaust device of the semiconductor dry etching equipment consisting of a pump, the anti-reflection wing which prevents the flow of air flowing in the exhaust pipe is installed on the four sides of the exhaust pipe so as to intersect with each other in space, the exhaust gas from the process chamber Impurities have an effect to solve the contamination problem of the process chamber and wafer caused by the partial flow back to the process chamber, and to improve the exhaust capacity of the pump.

Claims (2)

웨이퍼를 식각하는 공정챔버의 일측에 설치하여 공정압력조절 및 공정완료후 배기를 하도록 한 배기관과, 상기 배기관이 일측단부에 설치한 펌프로 구싱된 반도체 건식각장비의 배기장치에 있어서, 상기 배기관내에 유동되는 공기기 역류하지 않도록 한 역류방지날개를 상기 배기관의 네 면에 공간상에서 서로 교차하도록 고정 설치한 것을 특징으로 하는 반도체 건식각장비의 배기장치.An exhaust pipe installed at one side of a process chamber for etching a wafer to control process pressure and exhaust after completion of a process, and an exhaust device of a semiconductor dry etching equipment which is driven by a pump installed at one end of the exhaust pipe. An exhaust device of a semiconductor dry etching equipment, characterized in that the non-return wing to prevent flow back to the air flows to the four sides of the exhaust pipe is fixed to cross each other in space. 제 1 항에 있어서, 상기 역류방지날개는 배기관의 상하면에 각각 접하며 공간상에서 교차하도록 위치하는 상측날개 및 하측날개와, 상기 배기관의 좌우면에 각각 접하며 공간상에서 교차되도록 위치하는 좌측날개 및 우측날개로 구성된 것을 특징으로 하는 반도체 건식각장비의 배기장치.According to claim 1, wherein the non-return wing is the upper wing and the lower wing which is in contact with the upper and lower surfaces of the exhaust pipe and intersect in space, respectively, and the left wing and the right wing, which are in contact with the left and right sides of the exhaust pipe and intersect in space. Exhaust device of a semiconductor dry etching equipment, characterized in that configured.
KR2019970039472U 1997-12-22 1997-12-22 Discharging device for semiconductor dry etcher KR200184162Y1 (en)

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