KR20030080447A - Gas scrubber - Google Patents

Abstract

PURPOSE: A gas scrubber for eliminating noxious gases generated from semiconductor manufacturing process using plasma is provided. CONSTITUTION: The gas scrubber(10) comprises a plasma generation means(1) for generating plasma of at least 1,000 deg.C by injecting plasma forming gas into DC arc discharge generated by applying voltage between anode member and cathode member; a noxious gas treatment means(2) separately connected to the plasma generation means to treat plasma introduced from the plasma generation means and noxious gases; an adsorption means(3) connected to the noxious gas treatment means to adsorb the treated gas or powder by spraying water to treated gas or powder introduced from the noxious gas treatment means; and a wastewater storage means(4) connected to the adsorption means to store the introduced wastewater by flowing in wastewater formed by the adsorption means, wherein the plasma generation means comprises cathode member, and anode member comprising at least one plasma forming gas inflow passageway and at least one cooling water passageway and at least one reactive gas inflow passageway, wherein the noxious gas treatment means comprises reaction chamber, at least one noxious gas inflow passageway and noxious gas guiding chamber, wherein the adsorption means comprises at least one water sprayer and collection chamber, and wherein the wastewater storage means comprises at least one pump and at least one sensor.

Description

Gas scrubber

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas scrubber, and more particularly, to a gas scrubber for decomposing harmful gas generated in a semiconductor manufacturing process or the like.

In the manufacture of various semiconductor devices or in the manufacture of liquid crystals, which have been rapidly developed in recent years, the gases emitted after use are toxic or flammable and have a great effect on the human body and greatly affect global warming. I need to.

Recently, the gas used in the manufacturing process of a semiconductor device is described by the process as follows. First, in the etching process, CF4, SF6, CHF3, C2F6, SiF4, which are mainly used to etch silicon oxide, silicon nitride, and poly crystalline silicon, Fluorine gases such as F2, HF and NF3, chlorine gases such as Cl2, HCl, BCl3, SiCL4, CCl4 and CHCl3 used to etch aluminum and silicon, and trench etching (trench-etch) or bromine gases such as HBr and Br2 used for etching aluminum together with Cl2, and in the next chemical vapor deposition (CVD) process, Silane, N2 and NH3 are commonly used. Used in the chamber. Particularly in the PECVD process, PFC or ClF3 is used to clean the chamber, which can generate SiF4. These gases are toxic, corrosive, and oxidative, and when released as they are, there is a risk of causing a lot of problems for the human body, the global environment, and the production facilities themselves.

Such gases are injected into a semiconductor manufacturing apparatus and used after etching, CVD, and the like, and are discharged. The exhaust gas contains a very small amount of unreacted gas.

Conventionally, the exhaust gas containing the unreacted gas has been discharged to the atmosphere as it is. However, due to the above-mentioned problem, the effects on the human body by treating the gas discharged from the semiconductor manufacturing process using a gas scrubber, There is a tendency to minimize the impact on global warming.

A gas scrubber generally refers to a device for processing a gas discharged from a semiconductor or liquid crystal manufacturing process. The gas scrubber is largely a primary gas scrubber directly attached to the rear end of each device and a secondary gas scrubber installed next to the primary gas scrubber. It is divided into gas scrubbers. Furthermore, primary gas scrubbers are largely classified into dry gas scrubbers, combustion gas scrubbers, and wet gas scrubbers, but recently, modified products such as combustion and wet or a mixture of combustion and dry are also produced.

BACKGROUND ART A gas scrubber generally widely used is a wet gas scrubber that purifies and cools by spraying water on a gas passing through a chamber. Wet gas scrubber has the advantage of being easy to manufacture and large capacity in a simple process and simple structure, but insoluble gas is impossible to process and inadequate for the treatment of ignitable gas containing a hydrogen group. In addition, since a large amount of wastewater is generated and a separate wastewater treatment facility is required, the operation and maintenance costs are increased, which is not economical.

Combustion gas scrubbers are classified into a direct combustion method through which exhaust gas passes through a burner of a hydrogen burner and an indirect combustion method through which exhaust gas passes through a high temperature chamber formed by a heat source. However, these combustible gas scrubbers are excellent in the treatment efficiency of flammable gases, but are not suitable for the treatment of non-degradable harmful gases due to insufficient temperature to decompose stable substances such as PFC, and by-products as secondary harmful substances. There is also a need for an additional cleaning process for the treatment of.

Recently, a gas scrubber using a combination of a combustion type and a wet type has been used for reasons of economy, stability, and efficiency. However, the conventional mixed gas scrubber has a problem that the inner diameter of the burning chamber is small and the length is long enough to obtain a sufficient combustion temperature, so that it takes up a lot of installation area and the hot gas stays in the burning chamber for a long time and is very vulnerable to corrosion. In addition, there is a problem in that powder is accumulated due to structural defects in a part where the gas and water contact with the high temperature burning chamber are in contact with each other.

The present invention is to solve the above problems, it is an object of the present invention to provide a gas scrubber that can improve the treatment efficiency of harmful gases by treating the harmful gas using a high temperature plasma.

Another object of the present invention is to provide a gas scrubber capable of suppressing the generation of secondary pollutants generated from the treated gas.

Still another object of the present invention is to provide a gas scrubber capable of improving the treatment speed by treating harmful gases using high temperature plasma.

Still another object of the present invention is to provide a large-capacity gas scrubber capable of treating a large amount of noxious gas using high temperature plasma.

It is another object of the present invention to provide a gas scrubber that solves the problem of lamination of powder in a mixed gas scrubber.

1 is a front view showing a gas scrubber according to an embodiment of the present invention.

FIG. 2 is a sectional view showing the plasma generating means and the noxious gas treating means of FIG.

3 is a cross-sectional view showing a section 3-3 of FIG.

4 is a cross-sectional view showing the adsorption means and waste water storage means of FIG.

<Brief description of symbols for the main parts of the drawings>

1 plasma generating means 2 harmful gas treatment means

3a: internal adsorption means 3b: external adsorption means

3: adsorption means 4: waste water storage means

5: case 10: gas scrubber

11: level sensor 17: process gas exhaust

18: pipe 20, 21: pressure gauge

22, 23, 24, 25, 26: flowmeter 27: wheels

30: cathode member 31: anode member

35: insulating layer 38: harmful gas inlet passage

39: reaction chamber 42, 46: water cooling chamber

44, 45, 83: Flange 47: Plasma forming gas inflow passage

48: reactive gas inflow passage 81: polling

82: Demister 85: solenoid valve

90: temperature sensor 92: monitoring window

93a: internal collection room 93b: external collection room

96: processing gas inlet 100: water injection device

In order to achieve the above object, a gas scrubber according to an aspect of the present invention is a gas scrubber for decomposing noxious gas generated in a semiconductor manufacturing process using plasma, and is generated by applying a voltage between an anode member and a cathode member. Plasma generating means for generating a plasma of at least 1000 ° C. by injecting a gas to form a plasma into a direct current arc discharge, and detachably coupled to the plasma generating means to process the plasma and the harmful gas introduced from the plasma generating means. The toxic gas treatment means and the toxic gas treatment means are connected to the adsorption means and the adsorption means for adsorbing the process gas or powder by spraying water on the process gas or powder introduced from the toxic gas treatment means. Inflow of wastewater formed by the adsorption means Characterized in that the waste water storage means for storing.

The plasma generating means includes a cathode member to which a negative voltage is applied to form a plasma, a cathode member to which a constant voltage is applied to form a plasma, having a plasma generating chamber in which a reaction to form a plasma occurs, and the anode The member is formed with at least one plasma forming gas inflow passage so that the gas to form a plasma flows into the plasma generating chamber, and at least one cooling water flow passage so that the coolant for cooling the anode member can flow. desirable.

It is preferable that at least one reactive gas inlet passage is formed in the anode member, through which a reactive gas for promoting a reaction for treating the noxious gas is introduced.

It is preferable that the said reactive gas is oxygen or water vapor.

The noxious gas treatment means has a reaction chamber in which the plasma introduced from the plasma generating means reacts with the noxious gas introduced from the outside, and at least one noxious gas inflow passage through which the noxious gas flows is formed in the sidewall thereof. It is preferable that it is done.

Preferably, the side wall of the noxious gas treatment means is further provided with a noxious gas inducing chamber communicating with the noxious gas inflow passage and allowing the noxious gas introduced from the outside to pass into the reaction chamber.

Preferably, the plasma generating means and the noxious gas treatment means are detachably coupled by a flange.

The adsorption means has at least one water jet unit for injecting water so that the processing gas or powder introduced from the noxious gas treatment means can be adsorbed, and the water spraying device is installed to supply the adsorbed process gas or powder. It is preferable to have a collecting chamber inside to collect.

It is preferable that the said water spray value is a spray.

The collection chamber may be provided with a plurality of polling to collect the processing gas or powder adsorbed by the water injected from the water spray device.

The collection chamber is equipped with the water spraying device and at least one internal collection chamber which adsorbs the processing gas or powder by the water injected therefrom, and communicates with the internal collection chamber and surrounds the outer surface at a predetermined distance from the outer surface thereof. Preferably consists of an external collection chamber.

Communication between the inner and outer collection chamber is preferably made by a through hole formed in the lower portion of the inner collection chamber.

The interior of the inner collection chamber is preferably provided with a plurality of polling to collect the processing gas or powder adsorbed by the water injected from the water spray device.

It is preferable that the inside of the outer collection chamber is provided with water removal means.

The water removal means is preferably a demister consisting of several layers of meshes.

The collection chamber is preferably connected to a processing gas exhaust portion through which the processing gas which is not adsorbed in the collection chamber is exhausted.

The wastewater storage means is preferably provided with at least one pump for discharging the stored wastewater to the outside when it reaches a predetermined level.

At least one sensor for sensing the level of the stored wastewater is preferably provided inside the wastewater storage means.

The wastewater storage means is operated by receiving a signal from at least one sensor for detecting the level of the stored wastewater, and having at least one pump configured to automatically operate when the stored wastewater reaches a predetermined level. desirable.

The above gas scrubber may treat harmful gas generated in the liquid crystal manufacturing process.

In addition, the gas scrubber may be treated with at least one harmful gas selected from the group consisting of CF4, C2F6, C3F8, CHF3, SF6, NF3.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a front view showing a gas scrubber according to an embodiment of the present invention, Figure 2 is a cross-sectional view showing the plasma generating means and the harmful gas processing means of Figure 1, Figure 3 is the harmful gas processing means of Figure 1 Figure 4 is a cross-sectional view of Figure 4 is a cross-sectional view showing the adsorption means and waste water storage means of FIG.

Referring to FIG. 1, a gas scrubber 10 according to a preferred embodiment of the present invention is a gas scrubber 10 for decomposing noxious gas generated in a semiconductor manufacturing process using plasma, and includes a plasma generating means 1, A noxious gas treatment means (2), an adsorption means (3) and a wastewater storage means (4) are provided.

The plasma generating means 1, as shown in Figure 2, to form a plasma such as nitrogen or argon in the DC arc discharge generated by applying a voltage between the anode member 31 and the cathode member 30 It is configured to generate a plasma of at least 1000 ° C by injecting a gas.

It is preferable that the water cooling chamber 33 is formed in the cathode member 30 so that the cooling water for cooling the cathode member 30 flows.

One end of the cathode member 30 is located in the plasma generation chamber 49, and the other end thereof is located outside the plasma generation chamber 49.

The cathode member 30 is insulated by the anode member 31 and the insulator 35.

A negative voltage for forming a high temperature plasma is applied to the cathode member 30, and a constant voltage for forming the high temperature plasma is applied to the anode member 31.

At this time, a DC arc discharge is formed between the anode member 31 and the cathode member 30, and plasma such as nitrogen or argon introduced into the DC arc discharge region through the plasma forming gas inflow passage 47 is formed. The hot plasma is formed by injecting a gas to be formed. In order to form a high temperature plasma of at least 1000 ° C., a high voltage of at least about 100 volts V must be applied to the anode and cathode members 31 and 30.

As shown in FIG. 2, the anode member 31 has a plasma generating chamber 49 in which a reaction in which plasma is formed occurs, and the side wall 43 has noxious gas in the plasma generating chamber 49. At least one plasma-forming gas inflow passage 47 through which noxious gas passes is formed so that the gas flows in, and the cooling chamber for cooling the anode member 31 flows inside the side wall 43. (42) is formed.

As shown in FIG. 2, the toxic gas treatment means 2 is detachably coupled to the plasma generating means 1 by the first and second flanges 44 and 45.

Reactive gas such as oxygen or water vapor, which promotes a reaction between the plasma flowing into the harmful gas treating means 2 and the harmful gas flowing into the harmful gas treating means 2, may be introduced into the first flange 44. At least one reactive gas inlet passage 48 may be formed.

The reactive gas inflow passage 48 may be formed in the anode member 31 itself.

In this way, the introduced reactive gas is introduced into the noxious gas treatment means 2 together with the plasma, thereby promoting the reaction of the plasma and the noxious gas in the noxious gas treatment means 2 to improve the decomposition efficiency of the noxious gas. .

In addition, the first flange 44 may be formed with the inlet 40 of the cooling water in communication with the water cooling chamber 42 of the positive electrode member 31 is introduced therein, the upper portion of the positive electrode member 31 Cooling water outlet 41 in communication with the water cooling chamber 42 may be formed.

Although not shown in the drawing, the coolant inlet 40 of the first flange 44 is connected to the water cooling chamber 33 of the negative electrode member 30 so as to be connected to the water cooling chamber 33 of the negative electrode member 30. It is preferable to allow the cooling water flowing through the first flange 44 to continuously flow through the water cooling chamber 42 of the positive electrode member 31 because the efficiency of the cooling water can be simplified and the structure can be simplified.

The first flange 44 may be integrally coupled to the anode member 31, and the second flange 45 may be separated from the noxious gas treatment means 2 by the plasma generating means 1. Both can be flanged.

As such, the plasma generating means 1 and the noxious gas treatment means 2 are detachably coupled to each other so that only this is separately separated and replaced when the plasma generating means 1 is worn out. If there is no need to replace separately, there is an advantage that only the plasma generating means 1 can be easily separated and replaced separately.

In the central portion of the first and second flanges 44 and 45, a through hole is formed so that the plasma generated by the plasma generating means 1 can flow into the noxious gas treatment means 2, respectively.

As shown in FIG. 2, the noxious gas processing means 2 has a reaction chamber 39 in which the plasma introduced from the plasma generating means 1 reacts with the noxious gas introduced from the outside.

In addition, at least one harmful gas inflow passage 38 through which the harmful gas flows is formed on the side wall 36 of the harmful gas decomposition means 2.

As shown in FIG. 3, the noxious gas inflow passage 38 is disposed such that a passage of about 3 mm in diameter is disposed while maintaining a uniform distance in the radial direction with respect to the reaction chamber 39 and is also disposed up and down. It is desirable to form.

By forming the harmful gas inlet passage 38, the plasma and the harmful gas can be evenly mixed, and the time for which the harmful gas stays in the plasma region can be increased, so that the decomposition rate can be improved and a large amount of treatment can be achieved. It is possible.

In addition, the harmful gas inflow passage 38 is preferably disposed as close to the coupling site with the plasma generating means 1 as possible to improve the decomposition efficiency by injecting harmful gas close to the high temperature plasma region. Do.

Furthermore, as illustrated in FIGS. 2 and 3, the side wall 36 of the noxious gas treatment means 2 communicates with the noxious gas inflow passage 38 and the noxious gas introduced from the outside is reacted with the reaction chamber 39. It is preferable that a harmful gas induction chamber 37 is formed so as to pass before entering the tank.

The noxious gas induction chamber 37 may be formed by processing the noxious gas induction chamber 37 inside the sidewall 36, but is spaced apart from the outer surface of the sidewall 36 at a predetermined interval. It may be formed by adding a separate member disposed to surround 36.

By forming the noxious gas induction chamber 37, the noxious gas can be evenly distributed to the noxious gas inflow passage 38 communicated therewith, and as a result, the reaction chamber 39 is formed through the noxious gas inflow passage 38. Toxic gas can be introduced evenly, which allows the harmful gas to be smoothly mixed with the plasma in the reaction chamber 39 to improve the treatment efficiency of the harmful gas.

The noxious gas inducing chamber 37 is connected to the noxious gas inducing chamber 37 by connecting the noxious gas inducing chamber 37 with a semiconductor manufacturing apparatus (not shown). The pipe 18 which flows in into is connected.

It is preferable that the water cooling chamber 46 is formed on the side wall 36 of the noxious gas treatment means 2 so that the coolant for cooling the noxious gas treatment means 2 can flow.

The water cooling chamber 46 of the noxious gas treatment means 2 is preferably arranged such that it is not in communication with the noxious gas inflow passage 38, for example, as shown in FIG.

The base 50 for supporting the harmful gas treatment means 2 is coupled thereto.

As illustrated in FIG. 4, the noxious gas treatment means 2 is coupled with an adsorption means 3 for injecting water into and adsorbing the process gas or powder introduced from the noxious gas treatment means 2. .

Herein, the treatment gas refers to a noxious gas treated by the noxious gas treatment means 2, and the powder is an impurity powder generated in a semiconductor manufacturing apparatus (not shown) through the noxious gas treatment means 2 and the adsorption means 3. ) Is the one that flowed into.

The noxious gas treatment means 2 and the adsorption means 3 are detachably coupled by a third flange 83 in which a treatment gas inlet 96 is formed at the center thereof.

As shown in FIG. 4, the adsorption means 3 includes a water spraying device 100 such as at least one spray for injecting water so that the processing gas or powder introduced from the noxious gas treatment means 1 can be adsorbed. ), The water spraying device (100) is installed and has a collection chamber (93) for collecting the adsorbed process gas or powder therein.

The collection chamber 93 has an internal adsorption means 3a, to which the water spraying device 100 is mounted, which has an internal collection chamber 93a for adsorbing a processing gas or the like by the water injected therefrom, and the internal collection chamber ( It consists of the external adsorption means 3b which has the external collection chamber 93b which communicates with 93a and surrounds the exterior.

Communication between the internal collection chamber 93a and the external collection chamber 93b is preferably performed by a through hole 86 formed in the lower portion of the internal collection chamber 93a.

An upper portion of the internal collection chamber 93a is in communication with a processing gas inlet 96 of the third flange 83, and a lower portion of the inner collection chamber 93a collects a processing gas or powder adsorbed by the water spraying device 100. Are filled with two polls 81.

Thus, by providing the polling 81, the adsorption means 3 can increase the collection efficiency of the by-product by maximizing the contact area and the contact time with the water droplets.

The side wall of the external adsorption means 3b is provided with a process gas exhaust unit 17 through which the process gas discharged to the outside through the internal collection chamber 93a and the external collection chamber 93b passes. The exhaust unit 17 is provided with a sensor 90 for sensing the temperature of the exhaust gas.

The water supply pipe (87) for supplying water to the water spraying device (100) is the temperature sensor (90) installed in the processing gas exhaust unit 17 so that the amount of water sprayed in accordance with the signal sent by the sensed sent to the The solenoid valve 85 which adjusts the quantity of water supplied to the water spraying apparatus 100 is provided.

By configuring the temperature sensor 90 and the solenoid valve 85 as described above, the amount of water injected into the processing gas of the internal collection chamber 93a or the like is appropriately adjusted according to the temperature of the processing gas exhausted. It can improve safety.

The external collection chamber (93b) is preferably provided with water removing means (82), such as a demister made of several layers of mesh.

Thus, by providing the water removal means 82 in the external collection chamber (93b), the gas scrubber (10) by removing the moisture of the exhaust gas passing through the external collection chamber (93b) and discharged to the process gas exhaust (17) Corrosion at the back of the pipe can be minimized.

The lower portion of the external adsorption means (3b) is provided with a chain clamp 84 for coupling the portion 89 and the remaining portion 88 coupled to the wastewater storage means 4 to be described later.

The chain clamp 84 also supports the internal adsorption means 3a, the pollings 81 arranged therein and the water removal means 82 arranged in the external collection chamber 3b, the central portion of which A plurality of through holes 86 are formed so that the inner and outer collection chambers 93a and 93b communicate with each other.

The external suction means 3b may be provided with a monitoring window 92 for observing the state of the collection chamber 93 from the outside.

The adsorption means (3) is provided with a wastewater storage means (4) which is connected to the adsorption means (3) for introducing and storing the wastewater formed by the adsorption means (3).

The wastewater storage means 4 is preferably made of a PVC material resistant to corrosion so as to be safe to the corrosive wastewater.

At least one pump 106 which receives a signal from at least one sensor 11 for detecting the level of the stored wastewater in the wastewater storage means 4, and automatically operates when the stored wastewater reaches a predetermined level. ).

The gas scrubber according to the present invention is not limited thereto, and may include only the pump 106 without the water level sensor 11. In this case, the water level of the wastewater stored in the wastewater storage means 4 may be checked with the naked eye and the pump 106 may be operated if necessary.

The gas scrubber according to the present invention may also include only the water level sensor 11 without the pump 106. In this case, the worker may manually discharge the wastewater according to the signal of the water level sensor 11.

In Fig. 1, reference numeral 5 denotes a case, reference numeral 27 denotes a wheel, reference numeral 9 denotes an automatic control unit, reference numerals 14 and 15 denote power, and Reference numerals 20 and 21 denote pressure gauges, and reference numerals 22 to 26 denote flow meters, respectively.

The gas scrubber described above can also decompose harmful gases generated in the liquid crystal manufacturing process.

In addition, the gas scrubber may decompose at least one harmful gas selected from the group consisting of CF4, C2F6, C3F8, CHF3, SF6, NF3.

Hereinafter, the operation of the gas scrubber according to the present invention having the above-described configuration will be described.

DC arc discharge is formed between the negative electrode member 30 and the positive electrode member 31 by a high voltage of at least 100 volts (V) applied between the negative electrode member 30 and the positive electrode member 31. The plasma forming gas, such as argon and nitrogen, introduced into the region through the plasma forming gas inflow passage 47 is ionized to form a plasma of at least 1000 ° C. The high temperature plasma thus formed is introduced into the reaction chamber of the noxious gas treatment means 2 connected to the plasma generating means 1. At this time, the reactive gas, such as oxygen and hydrogen, introduced through the reactive gas inlet passage 48 of the plasma generating means 1 is introduced into the noxious gas treatment means () together with the plasma. As such, the plasma and the reactive gas introduced into the noxious gas treatment means 2 react with the noxious gas introduced into the noxious gas treatment means 2 through the noxious gas inflow passage 38. At this time, the reactive gas, such as oxygen, hydrogen, and the like introduced through the reactive gas inflow passage 48 may improve the treatment efficiency of harmful gases by promoting the reaction between the plasma and the harmful gases. Thus, the harmful gas and the powder generated and introduced into the semiconductor manufacturing apparatus are introduced into the adsorption means (3) combined with the noxious gas treatment means (2) to the water injected from the water spray means (100) installed therein. By quenching the water-soluble, acidic gas and powder by adsorption, the treated gas which is not adsorbed passes through the water removal means 82 such as the demister to remove water and then discharges, and the adsorbed waste water is discharged to the adsorption means 3 and Into the combined wastewater storage means 4 is stored. When the wastewater stored in the wastewater storage means 4 reaches a predetermined level, the sensor 106 detects this and operates the pump 106 to discharge the wastewater to the outside.

The present invention having the configuration as described above has the following effects.

First, by evenly injecting harmful gas into the high temperature plasma, it is possible to smoothly mix the harmful gas and the plasma, thereby improving the decomposition rate, decomposition rate and decomposition amount of the harmful gas.

Second, by using the adsorption means to quench the processing gas or powder to suppress the generation of by-products as much as possible, and also to remove the corrosive gas or acid gas, it is possible to improve the throughput, processing speed and throughput of a large amount of hardly decomposable harmful gas.

Third, the problem of lamination of powder in the mixed gas scrubber can be solved.

Although the present invention has been described with reference to the embodiments illustrated in the accompanying drawings, it is merely an example, and those skilled in the art may realize various modifications and equivalent other embodiments therefrom. Will understand. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

Claims (21)

As a gas scrubber to decompose harmful gases generated in a semiconductor manufacturing process using plasma: Plasma generating means for generating a plasma of at least 1000 ° C. by injecting a gas to form a plasma into a direct current arc discharge generated by applying a voltage between the anode member and the cathode member; Noxious gas treatment means coupled to the plasma generating means to treat plasma introduced from the plasma generating means and the noxious gas; Adsorption means connected to the noxious gas treatment means and adsorbing the process gas or powder by spraying water on the process gas or powder introduced from the noxious gas treatment means; And And a wastewater storage means connected to said adsorption means for introducing and storing wastewater formed by said adsorption means. The anode member of claim 1, wherein the plasma generating means has a cathode member to which a negative voltage is applied to form a plasma, and a cathode member to which a constant voltage is applied to form a plasma. And The anode member is provided with at least one plasma forming gas inflow passage so that the gas to form a plasma flows into the plasma generating chamber, and at least one cooling water flow passage so that the coolant for cooling the anode member can flow. Gas scrubber, characterized in that. The gas scrubber according to claim 1, wherein the positive electrode member has at least one reactive gas inflow passage through which a reactive gas for promoting a reaction for treating the noxious gas is introduced. 4. The gas scrubber according to claim 3, wherein the reactive gas is oxygen or water vapor. The method of claim 1, wherein the harmful gas treatment means has a reaction chamber in which the plasma introduced from the plasma generating means and the harmful gas introduced from the outside reacts therein, and at least one of the harmful gases introduced into the side wall thereof. Gas scrubber characterized in that the harmful gas inlet passage is formed. The toxic gas induction chamber is further formed on a side wall of the toxic gas treatment means, the toxic gas inflow passage being formed so as to pass through the toxic gas introduced from the outside before entering the reaction chamber. Gas scrubber. The gas scrubber according to claim 1, wherein the plasma generating means and the noxious gas treatment means are detachably coupled by a flange. The method of claim 1, wherein the adsorption means has at least one water jet device for injecting water to adsorb the processing gas or powder introduced from the noxious gas treatment means, the water spray device is installed and the adsorption Gas scrubber characterized in that it has a collection chamber for collecting the processed gas or powder. 9. The gas scrubber according to claim 8, wherein the water spray device is a spray. The gas scrubber according to claim 8, wherein the collection chamber is provided with a plurality of pollings for collecting the processing gas or powder adsorbed by the water injected from the water spraying device. The method of claim 8, wherein the collection chamber is equipped with the water spraying device and at least one inner collection chamber for adsorbing the processing gas or powder by the water injected therefrom, and the communication with the inner collection chamber and a predetermined distance from the outer surface Gas scrubber, characterized in that consisting of the outer collection chamber surrounding the outer surface. 12. The gas scrubber according to claim 11, wherein the communication between the inner and outer collection chambers is made by a through hole formed in the lower portion of the inner collection chamber. 12. The gas scrubber according to claim 11, wherein a plurality of pollings for collecting the processing gas or powder adsorbed by the water injected from the water spraying device are provided in the inner collection chamber. The gas scrubber according to claim 11, wherein water removal means is provided inside the outer collection chamber. 15. The gas scrubber according to claim 14, wherein the water removing means is a demister composed of several layers of meshes. The gas scrubber according to claim 8, wherein the collection chamber is connected to a processing gas exhaust portion through which a processing gas which is not adsorbed in the collection chamber is exhausted. The gas scrubber according to claim 1, wherein the wastewater storage means is provided with at least one pump for discharging the wastewater to the outside when the stored wastewater reaches a predetermined level. 18. The gas scrubber according to claim 17, wherein at least one sensor for detecting the level of the stored wastewater is provided inside the wastewater storage means. 18. The method of claim 17, wherein the wastewater storage means is operated by receiving a signal from at least one sensor for detecting the level of the stored wastewater, at least one of the wastewater to be automatically operated when the predetermined level is reached. A gas scrubber, comprising a pump. 20. The gas scrubber according to any one of claims 1 to 19, wherein the gas scrubber treats harmful gases generated in the liquid crystal manufacturing process. The gas scrubber according to any one of claims 1 to 19, wherein the gas scrubber treats at least one harmful gas selected from the group consisting of CF4, C2F6, C3F8, CHF3, SF6, and NF3.