KR20190037512A - Apparatus for treating waste gas in semiconductor fabricating process - Google Patents

Abstract

The present invention relates to an apparatus for treating waste gas in a semiconductor manufacturing process, which utilizes a plasma torch to safely decompose explosive gas hydrogen, ammonia, and silane and dichlorosilane used for precursor, which are generated in workplaces of a semiconductor and a display. Unlike a conventional method of cooling by plasma after the plasma torch, the present invention cools through a heat exchanging manner with exhaust gas after exhausting the plasma torch and adds a heat storage material to a processing apparatus to increase a waste heat recovery rate of the exhaust gas in order to improve overall system efficiency, thereby improving energy efficiency and explosive gas decomposition efficiency.

Description

TECHNICAL FIELD [0001] The present invention relates to an explosive waste gas treating apparatus for a semiconductor manufacturing process,

The invention of that, more specifically, the thermal treatment of waste gas, H _2, NH _3, CF _4, DCS gas and the like generated in the semiconductor and display fabrication process relates to explosive waste gas treatment system of a semiconductor manufacturing process, the plasma And simultaneously recovering the waste heat contained in the exhaust gas by using a dry type heat exchanger to increase the energy efficiency.

Generally, a manufacturing process for manufacturing a semiconductor device is performed at a high temperature using various process gases in a process chamber in which a specific process is performed. During the process, various reactive materials and unreacted materials Etc. are produced as a by-product of the manufacturing process.

Process by-products often contain large quantities of toxic substances harmful to the environment. (SiH ₄ ), ammonia (NH ₃ ), nitrous oxide (N ₂ O), nitrogen monoxide (NO ₃ ), and nitric acid (NO ₃ ) used in the unit processes of the semiconductor manufacturing process such as chemical vapor deposition process, ion implantation process, ), Phosphoric acid (PH ₃ ), and ascorbic acid (AsH) cause environmental pollution due to toxicity to human body, corrosiveness to metal, and flammability. Accordingly, reaction by-products are discharged from the process chamber by a vacuum pump, filtered by a purifying system such as a scrubber, and discharged into the atmosphere.

The process waste gas generated in the semiconductor manufacturing process, particularly the PFC gas of the freon gas series, has an explosive reaction characteristic when it comes into contact with air and a characteristic of being burned by heating. Such PFC gas characteristic combustion device or wet process However, since the purifying efficiency of the process waste gas discharged is low, a complete purifying process can not be expected. In addition, there is a problem in that the configuration of the purifying device is very complicated and the equipment cost is high.

In addition, semiconductor and display manufacturing processes frequently cause explosion during the fluorine-containing gas treatment process, thereby threatening the safety of workers and safety of factories. In addition, in order to decompose various gases containing fluorine gas, (Combustion method using methane-based fuel), hybrid method (catalyst + burner), but most of the gas after combustion is cooled using water So that it is difficult to recover the energy.

Conventionally, there is a problem that the technology of treating the fluorine-containing gas is very high in energy consumption due to absorption by resin at room temperature, technology by electric heater in high temperature region, and wet treatment after combustion, and energy recovery is not considered. In addition, since the wet process is applied to the waste gas treatment, the waste water is generated and the waste water is disadvantageously treated. In addition, when the wet process is applied, the hydrofluoric acid is formed due to the reaction between water and fluorine, have.

Korean Patent Registration No. 10-1519507 Korean Patent Registration No. 10-0766749

Disclosure of the Invention The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a plasma torch which can safely decompose silane, dichlorosilane gas, etc. used as explosive gases, In the present invention, the exhaust gas is cooled by the heat exchange with the exhaust gas after burning the plasma torch, and the decomposition gas decomposition efficiency can be increased by adding a heat storage material to the processing apparatus to increase the overall system efficiency It is, of course, an object of the present invention to provide an explosive waste gas treatment apparatus for a semiconductor manufacturing process capable of raising the waste heat recovery rate of the exhaust gas to enhance the energy efficiency.

In order to accomplish the above object, the present invention is an explosive gas processing apparatus for decomposing waste gas generated in a manufacturing process, recovering waste heat from an exhaust gas and discharging the waste heat to the outside, A heat exchange unit having a supply portion, an oxidant supply portion into which the oxidant flows, a first heat exchange portion to heat the waste gas flowing through the waste gas supply portion, and a second heat exchange portion to heat the oxidant flowing in the oxidant supply portion; A combustion chamber in which a waste gas supplied from the waste gas supply unit and an oxidant supplied from the oxidant supply unit are mixed to burn and decompose the waste gas; A plasma torch for generating a plasma by an electric arc generated between a negative electrode and a positive electrode to burn waste gas in the combustion chamber; A reaction chamber in which a heat storage material is installed to decompose the exhaust gas which has been burned in the combustion chamber and decomposed first; And an exhaust gas discharge pipe connecting the reaction chamber and the heat exchange unit to discharge the exhaust gas through the reaction chamber; The first heat exchanger recovers waste heat from the exhaust gas discharged through the exhaust gas discharge pipe to heat the waste gas in the waste gas supply unit. The second heat exchange unit discharges the exhaust gas through the exhaust gas discharge pipe And recover the waste heat from the exhaust gas to heat the oxidizing agent in the oxidizing agent supply portion.

According to another aspect of the present invention, there is provided an explosive gas processing apparatus for a semiconductor manufacturing process for decomposing waste gas generated in a semiconductor manufacturing process, recovering waste heat from the exhaust gas and discharging the waste heat to the outside, A heat exchanging unit including an oxidant chamber to be introduced, a first heat exchange unit installed in the waste gas chamber, and a second heat exchange unit installed in the oxidant chamber; A combustion chamber in which a waste gas supplied from the waste gas chamber and an oxidant supplied from the oxidant chamber are mixed to combust and decompose the waste gas; A plasma torch for generating a plasma by an electric arc generated between a negative electrode and a positive electrode to burn waste gas in the combustion chamber; A reaction chamber in which a heat storage material is installed to decompose the exhaust gas which has been burned in the combustion chamber and decomposed first; And an exhaust gas discharge pipe connecting the reaction chamber and the heat exchange unit to discharge the exhaust gas through the reaction chamber; Wherein the first heat exchanger recovers waste heat from the exhaust gas discharged through the exhaust gas discharge pipe to heat the waste gas in the waste gas chamber and the second heat exchange unit discharges the exhaust gas through the exhaust gas discharge pipe And recover the waste heat from the exhaust gas to heat the oxidant in the oxidant chamber.

The heat storage material may use a ceramic ball, and it is preferable that the exhaust gas residence time is at least 0.5 seconds at 700 ° C or more.

As described above, energy efficiency can be improved by utilizing the waste heat of the waste gas exhausted from the existing process. By removing the second unreacted gas again using the heat storage material, the explosive gas removal rate can be increased, .

Further, since there is no wet cooling process after the plasma torch combustion, no secondary environmental pollution to the wastewater occurs.

In addition, since it is a dry heat exchanger cooling method, no hydrofluoric acid is formed, and corrosion problems of the system against hydrofluoric acid do not occur.

1 is a view showing an explosive waste gas treating apparatus in a semiconductor manufacturing process according to a first embodiment of the present invention;
2 is a view showing an explosive waste gas treating apparatus in a semiconductor manufacturing process according to a second embodiment of the present invention
3 is a view for explaining the waste heat recovery rate
4 to 7 are graphs showing experimental results of the waste heat recovery rate
8 is a diagram showing the injection conditions for the removal rate of hydrogen and ammonia which are explosive gases using a plasma heat source and a heat storage material
9 is a graph showing the removal rates of hydrogen and ammonia under the conditions of FIG. 8

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an explosive waste gas treatment apparatus in a semiconductor manufacturing process according to the present invention will be described in detail with reference to the accompanying drawings.

As will be known, gases used in semiconductor and display manufacturing processes are classified into silicon oxide, silicon nitride, and polycrystalline silicon in an etching process. Fluorine gases such as CF ₄ , SF ₆ , CHF ₃ , C ₂ F ₆ , SiF ₄ , F ₂ , HF and NF ₃ used for etching the aluminum and silicon _{2, HCl, BCl 3, SiCL} 4, CCl 4, CHCl 3 , etc. of the chlorine gas (chlorine gas) and the trench etching HBr, Br ₂ is used in the etching process of the aluminum with (trench-etch) or Cl ₂ Bromine gas is used.

Semiconductor pre-process materials are divided into gas, chemical, and wafer. Process classification includes CVD, dry etching gas, PR (photoresist), cleaning / CMP, wet etching Chemical).

In the explosive waste gas treatment apparatus of the semiconductor manufacturing process of the present invention, the plasma torch is used to burn and decompose the process gas generated in the semiconductor manufacturing process, that is, the above-mentioned waste gas, It is a device for recovering waste heat of exhaust gas by a heat exchange method which is a dry method. No secondary environmental pollution occurs, and hydrofluoric acid is not generated, so corrosion problem caused by hydrofluoric acid can be solved. Furthermore, by removing the second unreacted gas utilizing the heat storage material in the reaction chamber, the explosive gas removal rate can be increased.

Hereinafter, the first embodiment and the second embodiment of the present invention will be described.

FIG. 1 is a view showing an explosive waste gas treating apparatus of a semiconductor manufacturing process according to a first embodiment of the present invention, and FIG. 2 is a view showing an explosive waste gas treating apparatus of a semiconductor manufacturing process according to a second embodiment of the present invention. Fig.

The difference in construction between the first embodiment of the present invention and the second embodiment of the present invention lies in the heat exchange unit.

1, in the heat exchanging unit 100 of the first embodiment, the waste gas supply unit 110 into which the waste gas flows and the oxidant supply unit 120 into which the oxidant flows are elongated by a bent tube, . The first heat exchanging unit 130 and the second heat exchanging unit 140 are configured to recover exhaust gas heat to heat the waste gas flowing through the waste gas supplying unit 110 and the oxidant flowing through the oxidizing agent supplying unit 120 .

2, the heat exchanging unit 200 of the second embodiment comprises a waste gas chamber 210 into which waste gas flows and an oxidant chamber 220 into which an oxidant flows. The first heat exchanging unit 230 and the second heat exchanging unit 240 are configured to recover heat of the exhaust gas to heat the waste gas in the waste gas chamber 210 and the oxidizing agent in the oxidizing agent chamber 220.

First, the configuration of the explosive waste gas treating apparatus in the semiconductor manufacturing process according to the first embodiment of the present invention will be described in more detail.

The explosive waste gas treatment apparatus of the semiconductor manufacturing process according to the present embodiment includes a heat exchange unit 100, a combustion chamber 20, a plasma torch 30, a reaction chamber 40, and an exhaust gas discharge pipe 50 .

A heat exchange unit 100 is installed on one side of the upper portion of the base frame 10 and a reaction chamber 40 is provided on the other side of the upper side of the base frame 10. A combustion chamber 20 is provided above the reaction chamber 40 and a plasma torch 30 is provided above the combustion chamber 20. An exhaust gas discharge pipe (50) is installed at a lower portion of the base frame (10).

The heat exchanging unit 100 of the present embodiment includes a waste gas supply unit 110 through which waste gas flows, an oxidant supply unit 120 through which the oxidant flows, and a waste gas supply unit 110 for heating the waste gas flowing through the waste gas supply unit 110 A first heat exchanger 130 and a second heat exchanger 140 for heating an oxidant flowing through the oxidizer supply unit 120.

The first heat exchanging unit 130 and the second heat exchanging unit 140 are configured to recover exhaust gas heat to heat the waste gas flowing through the waste gas supplying unit 110 and the oxidant flowing through the oxidizing agent supplying unit 120 .

As the oxidizing agent, at least one of air and oxygen may be used. For example, only air or oxygen may be used, and oxygen and air may be mixed at a certain ratio.

The waste gas supply unit 110 of this embodiment includes an inlet 111 into which waste gas flows, a bending pipe 112, and a connection pipe 113. The bending pipe 112 is intended to increase the volume area during heat exchange with the exhaust gas. The connection pipe 113 extends from the bending pipe 112 to the combustion chamber 20.

The oxidant supply unit 120 includes an inlet 121 through which the oxidant flows, a bending pipe 122, and a connection pipe 123. The bending tube 122 is intended to increase the volume area during heat exchange with the exhaust gas. The connection pipe 123 extends from the bending pipe 122 to the combustion chamber 20.

In the combustion chamber 20, the waste gas supplied from the waste gas supply unit 110 and the oxidant supplied from the oxidant supply unit 120 are mixed to burn and decompose the waste gas.

The plasma torch 30 forms a plasma by electric arc generated between the negative electrode and the positive electrode to burn the waste gas in the combustion chamber 20. At this time, the oxidizing agent promotes the combustion of the waste gas.

During normal combustion in the combustion chamber 20, the temperature in the combustion chamber 20 is maintained at a high temperature of about 700 to 800 ° C.

The reaction chamber 40 is a chamber for decomposing the exhaust gas (about 700-800 ° C) which has been primarily decomposed and burned in the combustion chamber 30, and a heat storage material 41 may be installed therein.

The exhaust gas discharge pipe 50 connects the reaction chamber 40 and the heat exchange unit 100 to discharge the exhaust gas through the reaction chamber 40.

The first heat exchanging unit 130 recovers heat from the exhaust gas discharged through the exhaust gas discharge pipe 50 to heat the waste gas of the waste gas supply unit 110. In the second heat exchanging unit 140, And heat the oxidizing agent in the oxidizing agent supply unit 120 by recovering heat from the exhaust gas discharged through the oxidizing agent supply unit 50.

In the present embodiment, the waste gas is burned abruptly in the combustion chamber 20 due to the flame formed at a high temperature by the plasma torch 30. Since the unreacted gas contained in the waste gas is secondarily decomposed by the heat storage material 41 through the reaction chamber 40, the decomposition rate of the waste gas (explosive gas) becomes very high unlike the conventional combustion method.

In the explosive waste gas processing apparatus of the semiconductor manufacturing process according to the first embodiment of the present invention, the process gas generated in the semiconductor manufacturing process, that is, the waste gas is supplied to the combustion chamber 20 through the waste gas supply unit 110, .

An oxidant is supplied through the oxidant supply part 120 to promote the combustion of the waste gas. As the oxidizing agent, at least one of air and oxygen may be used.

For example, only air or coral may be used, and oxygen and air may be mixed at a certain ratio. The mixing ratio can be controlled according to the treatment process of the waste gas.

The waste gas flows into the inlet 111 and then is supplied to the combustion chamber 20 through the bending pipe 112 and the connecting pipe 113. The heat is exchanged by the bending pipe 112, , The heat exchange efficiency is improved.

The oxidant flows into the inlet 121 and then is supplied to the combustion chamber 20 through the bent tube 122 and the coupling tube 123. The heat exchanged with the exhaust gas It is possible to increase the combustion efficiency.

In the combustion chamber 20, the waste gas supplied from the waste gas supply unit 110 and the oxidant supplied from the oxidant supply unit 120 are mixed to burn and decompose the waste gas. The plasma torch 30 is connected to the negative electrode So that a waste gas in the combustion chamber 20 is burned.

During normal combustion in the combustion chamber 20, the temperature in the combustion chamber 20 is maintained at a high temperature of about 700 to 800 ° C. The exhaust gas (about 700-800 ° C) which has been burned and primarily decomposed in the combustion chamber 30 is introduced into the reaction chamber 40 and decomposed again through the heat storage material 41.

That is, since the exhaust gas is secondarily decomposed by the heat storage material 41, the decomposition rate of the waste gas (explosive gas) becomes very high unlike the conventional combustion method.

Particularly, in the case of the heat storage material 41, a material which is durable at high temperature, for example, a ceramic ball can be used, and a differential pressure within a range not affecting the entire processing process, for example, 20 mmH ₂ O or less Do.

In order to increase the removal rate of the unreacted gas (explosive gas and precursor gas) after the combustion, it is preferable that the time for which the unreacted gas stays in the ceramic ball having the heat storage material (700 ° C or higher) is 0.5 seconds or more.

In this embodiment, waste heat is recovered from the exhaust gas discharged from the first heat exchanging unit 130 through the exhaust gas discharge pipe 50, and the waste gas is supplied to the waste gas supply unit 110). The waste gas supplied to the combustion chamber 20 is supplied to the combustion chamber 20 in a heated state.

In addition, heat is recovered from the exhaust gas discharged from the second heat exchanging unit 140 through the exhaust gas discharge pipe 50 to heat the oxidizing agent in the oxidizing agent supplying unit 120. The oxidizing agent supplied to the combustion chamber 20 is supplied to the combustion chamber 20 in a heated state.

Thus, the waste heat is recovered from the exhaust gas discharged through the exhaust gas discharge pipe 50, and the waste gas and the oxidant are heated and supplied to the combustion chamber 30, whereby the combustion efficiency in the combustion chamber 20 can be greatly increased .

In this embodiment, the energy efficiency can be increased by utilizing the waste heat of exhaust gas discharged from the existing gas treatment process, and the explosive gas removal rate can be increased by removing the secondary unreacted gas utilizing the heat storage material.

2, the explosive gas processing apparatus of the semiconductor manufacturing process according to the second embodiment of the present invention includes a heat exchange unit 200, a combustion chamber 20, a plasma torch 30, a reaction chamber 40 ), And an exhaust gas discharge pipe (50).

In this embodiment, the structure other than the heat exchanging unit 200 is the same as the above embodiment, and therefore, only the heat exchanging unit 200 will be described.

The heat exchange unit 200 of this embodiment includes a waste gas chamber 210 into which waste gas flows, an oxidizer chamber 220 into which oxidant flows, a first heat exchange unit 230 installed in the waste gas chamber 210, And a second heat exchanger 240 installed in the oxidizer chamber 220.

That is, the waste gas chamber 210 introduces the waste gas into the inlet 211, and the waste gas is supplied to the combustion chamber 20 through the connection pipe 213.

The oxidant chamber 220 introduces the oxidant into the inlet 221 and the oxidant is supplied to the combustion chamber 20 through the connection pipe 223.

Exhaust gas from the exhaust gas discharge pipe 50 passes through the first heat exchanging part 230 and the second heat exchanging part 240, and heat exchange is performed between the exhaust gas and the waste gas and the oxidizing agent. That is, the waste gas and the oxidizing agent are configured to recover heat from the exhaust gas and heat it.

In the explosive waste gas treatment apparatus of the semiconductor manufacturing process according to the second embodiment of the present invention, the waste gas generated in the semiconductor manufacturing process flows through the inlet 211 of the waste gas supply chamber 210, (210) and then supplied to the combustion chamber (20). The oxidant is introduced into the oxidizing chamber 220 through the inlet 221 of the oxidizing agent chamber 220 and then supplied to the combustion chamber 20 in order to promote the combustion of the waste gas.

The plasma torch 30 forms a plasma by an electric arc generated between the negative electrode and the positive electrode to burn and decompose the waste gas in the combustion chamber 20. The exhaust gas (about 700-800 ° C) which has been burned and primarily decomposed in the combustion chamber 30 is introduced into the reaction chamber 40 and decomposed again through the heat storage material 41.

The exhaust gas from the exhaust gas exhaust pipe 50 is exhausted through the first heat exchanger 230 and the second heat exchanger 240. At this time, the waste gas and the oxidizer recover heat from the exhaust gas and are heated, By supplying the gas and the oxidizing agent into the combustion chamber 20, the combustion efficiency can be increased.

3 is a view for explaining the waste heat recovery rate.

Referring to FIG. 3, the waste heat recovery rate in the heat exchange unit of this embodiment will be described below.

Heat Recovery Unit Total Heat Recovery Rate (Y) = A Region Waste Heat Recovery Rate (Ya) + G Region Waste Heat Recovery Rate (Yg)

A region waste heat recovery rate Ya = {(t _{f2 -} t _f3 ) / (t _{f2 -} t _a1 )} 100%

G waste heat recovery area _{(Yg) = {(t f1} - t f2) / (t f1 -t g1)} * 100% ( Equation 3)

[Note that t _f1 : Inlet-side exhaust gas temperature, t _f2:: middle of the exhaust gas temperature, t _f3: the outlet exhaust gas temperature, t _g1: the inlet waste gas temperature, t _g2: the outlet waste gas temperature, t _a1: inlet-side oxidant (Air) temperature, t _a2 (A) region: a region where heat exchange is performed between the oxidant (air) and the exhaust gas, and a G region: a region where heat exchange between the waste gas and the exhaust gas is performed)

1 and 2, the exhaust gas is discharged to the outside through the G region and the A region through the exhaust gas discharge pipe 50. The waste gas generated in the semiconductor manufacturing process flows through the G region into the combustion chamber 20, and the oxidant (air) is supplied to the combustion chamber 20 via the region A, respectively.

At this time, G waste heat recovery area (Yg) is, as shown in equation _{(3) {(t f1 - t} f2) / (t f1 -t g1)} can be calculated from the * 100%, A waste heat recovery zone ( a _{- {t f3) / (t} f2 -t a1) (t f2} * 100%, the total heat recovery rate (Y) is (formula 1) can be calculated as Ya) is, as shown in (equation 2) It can be calculated as the sum of the waste heat recovery rate (Ya) of the A region and the waste heat recovery rate (Yg) of the G region as shown.

4 to 7 are graphs showing experimental results of waste heat recovery.

In Figs. 4 to 7, the abscissa represents time (minute), and the ordinate represents waste heat recovery (%).

First, in FIG. 4, three curves are plotted for H ₂ gas. Each curve was tested for waste heat recovery under conditions of 20, 20 and 30 flow rates (l / min. LPM) and 10, 12, and 10 plasma voltages (kW), respectively. After 20 minutes from operation, the waste heat recovery rate was more than 60% in all three cases.

In FIG. 5, the heat recovery rate was tested by varying the flow rate (LPM) and the plasma voltage (kW) conditions for H ₂ and NH ₃ gases. All of the waste heat recovery rate was found to be more than 60% from 20 minutes after the start of operation.

In FIG. 6, waste heat recovery rate was tested for silane (SiH ₄ ) and DCS gas. All of the waste heat recoveries were found to be more than 60% from 15 minutes after the operation.

In Fig. 7, the recovery rates in the oxidizer (air) chamber (region A) and the waste gas chamber (region G) were summed up, confirming that the total waste heat recovery rate was 60% or more.

In all the experiments of this example, the average waste heat recovery was found to be 60%.

Also, in this embodiment, it was confirmed that the removal rate of hydrogen and ammonia, which are explosive gases, using the plasma heat source and the heat storage material was removed by 99% or more as shown in FIG. 9 under the injection condition shown in FIG.

As described above, the energy efficiency can be improved by utilizing the waste heat of the waste gas exhausted from the existing process. By removing the secondary unreacted gas again by utilizing the heat storage material, the explosive gas removal rate can be increased, Efficiency can be increased.

Further, since there is no wet cooling process after the plasma torch combustion, no secondary environmental pollution to the wastewater occurs.

In addition, since it is a dry heat exchanger cooling method, there is no formation of hydrofluoric acid, so that corrosion of the system against hydrofluoric acid does not occur.

10: Base frame
20: combustion chamber
30: Plasma torch
40: reaction chamber
41: Heat storage material
50: Exhaust gas discharge pipe
100: Explosive gas processing device in semiconductor manufacturing process
110: waste gas supply unit
111: entrance
112: curved tube
113: Connector
120: oxidant supply unit
130: first heat exchanger
140: second heat exchanger
200: Heat exchange unit
210: waste gas chamber
211: entrance
213: Connector
220: oxidizer chamber
221: Entrance
223: Connector
230: first heat exchanger
240: second heat exchanger

Claims (5)

An explosive gas processing apparatus for a semiconductor manufacturing process for decomposing waste gas generated in a semiconductor manufacturing process, recovering waste heat from the exhaust gas,
A first heat exchange unit for heating a waste gas flowing through the waste gas supply unit; and a second heat exchange unit for heating the oxidant flowing through the oxidant supply unit, wherein the waste gas supply unit includes: A heat exchange unit having a heat exchange unit;
A combustion chamber in which a waste gas supplied from the waste gas supply unit and an oxidant supplied from the oxidant supply unit are mixed to burn and decompose the waste gas;
A plasma torch for generating a plasma by an electric arc generated between a negative electrode and a positive electrode to burn waste gas in the combustion chamber;
A reaction chamber in which a heat storage material is installed to decompose the exhaust gas which has been burned in the combustion chamber and decomposed first; And
An exhaust gas discharge pipe connecting the reaction chamber and the heat exchange unit to exhaust the exhaust gas through the reaction chamber; ≪ / RTI >
The first heat exchanger recovers heat from the exhaust gas discharged through the exhaust gas discharge pipe to heat the waste gas of the waste gas supply unit. The second heat exchanger recovers heat from the exhaust gas discharged through the exhaust gas discharge pipe And the oxidizing agent supply unit is configured to heat the oxidizing agent in the oxidizing agent supply unit. An explosive waste gas treating apparatus for a semiconductor manufacturing process for decomposing waste gas generated in a semiconductor manufacturing process, recovering waste heat from an exhaust gas,
A heat exchange unit having a waste gas chamber into which waste gas flows, an oxidizer chamber into which an oxidant flows, a first heat exchange unit installed in the waste gas chamber, and a second heat exchange unit installed in the oxidant chamber;
A combustion chamber in which a waste gas supplied from the waste gas chamber and an oxidant supplied from the oxidant chamber are mixed to combust and decompose the waste gas;
A plasma torch for generating a plasma by an electric arc generated between a negative electrode and a positive electrode to burn waste gas in the combustion chamber;
A reaction chamber in which a heat storage material is installed to decompose the exhaust gas which has been burned in the combustion chamber and decomposed first; And
An exhaust gas discharge pipe connecting the reaction chamber and the heat exchange unit to exhaust the exhaust gas through the reaction chamber; ≪ / RTI >
The first heat exchanger recovers waste heat from the exhaust gas discharged through the exhaust gas discharge pipe to heat the waste gas in the waste gas chamber. The second heat exchange unit removes waste heat from the exhaust gas discharged through the exhaust gas discharge pipe And the oxidizing agent in the oxidizing agent chamber is recovered to heat the oxidizing agent in the oxidizing agent chamber. 3. The method according to claim 1 or 2,
Wherein the oxidizing agent is at least one of air and oxygen. 3. The method according to claim 1 or 2,
Wherein the thermal storage material uses a ceramic ball and has an exhaust gas retention time of at least 0.5 seconds at 700 DEG C or higher. The method according to claim 1,
A waste heat recovery rate (Y) = A waste heat recovery zone (Ya) + G waste heat recovery area (Yg) in the heat exchange unit, A waste heat recovery zone _{(Ya) = {(t f2} - t f3) / (t f2 -t _a1)} * 100%, G waste heat recovery area _{(Yg) = {(t f1} - t f2) / (t f1 -t g1)} * explosive of the semiconductor manufacturing process, characterized in that 100% of waste gas treatment system.
[Note that t _f1 : Inlet-side exhaust gas temperature, t _f2:: middle of the exhaust gas temperature, t _f3: the outlet exhaust gas temperature, t _g1: the inlet waste gas temperature, t _g2: the outlet waste gas temperature, t _a1: inlet-side oxidant (Air) temperature, t _a2 (A) region: a region where heat exchange is performed between the oxidant (air) and the exhaust gas, and a G region: a region where heat exchange between the waste gas and the exhaust gas is performed)

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