KR20170098053A - Transition metal dichalcogenide thin film transistor and method of manufacturing the same - Google Patents
Transition metal dichalcogenide thin film transistor and method of manufacturing the same Download PDFInfo
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- KR20170098053A KR20170098053A KR1020160019946A KR20160019946A KR20170098053A KR 20170098053 A KR20170098053 A KR 20170098053A KR 1020160019946 A KR1020160019946 A KR 1020160019946A KR 20160019946 A KR20160019946 A KR 20160019946A KR 20170098053 A KR20170098053 A KR 20170098053A
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- Prior art keywords
- transition metal
- active layer
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- plasma
- thin film
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- 229910052723 transition metal Inorganic materials 0.000 title claims abstract description 192
- 150000003624 transition metals Chemical class 0.000 title claims abstract description 188
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- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 70
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 68
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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Abstract
Description
The present invention relates to a transition metal decalcogenide thin film transistor and a method of manufacturing the same, and more particularly, to a transition metal decalcogenide active layer surface-treated with a plasma using oxygen or an oxygen compound, To a transition metal decalcogenide thin film transistor having improved electrical characteristics including a passivation layer formed and a method of manufacturing the same.
The characteristics of the thin film transistor may vary depending on the material of the active layer (channel layer or semiconductor layer). That is, the material of the active layer may be an important factor in determining the characteristics of the thin film transistor. For example, the carrier mobility and the on / off current ratio of the thin film transistor depend on the characteristics of the active layer.
The two-dimensional material has a very strong bonding force between the atoms in one layer as a covalent bond, and the layers are weakly bonded to each other and exist in a stacked layer form. Two-dimensional materials are characterized in that they are easily peeled mechanically into a single layer or an ultra-thin layer of several layers.
Among the two-dimensional materials, graphene has excellent thermal, electrical conductivity and charge mobility, and has remarkable molecular barrier properties and mechanical strength. However, graphene is not suitable for use as a semiconductor due to the characteristic of a zero band gap, and when attempting doping or microstructure modification in order to increase the band gap, mobility drops sharply, .
Accordingly, while studying new two-dimensional semiconductor materials, a molybdenum disulfide (MoS 2 ) thin film transistor reported by a research group of Swiss EPFL 2011 has an electron mobility of 200 cm 2 / V · s or more, an on / off current ratio of 10 8 , and many research groups at home and abroad have been concentrating on research on transition metal dicalconeide semiconductors such as MoS 2 and WSe 2 .
Transition metal dichalcogenides (TMD) are represented by the formula of MX 2 , where M is a transition metal element (commonly referred to as an element in which electrons exist in the d-orbital, groups 3 to 12 of the periodic table), X is a chalcogen element (Group 16 of the periodic table). Transition metal dicalcogenide materials exhibit metal, superconductivity, or semiconductor properties, depending on the constituent elements, among which materials exhibiting semiconductor properties are sulfides, selenides, and tellurium.
On the other hand, when the transition metal dicalcogenide is used as an active layer of a semiconductor device, unlike graphene, the on / off current ratio characteristics are excellent and the carrier mobility is relatively high. However, the transition between the forward bias and the reverse bias Hysteresis greatly reduces the reliability of semiconductor devices.
This hysteresis is an effect of trapping and releasing electrons in the forward and reverse biases on the surface of the semiconductor material, which are mainly atmospheric gases (mainly H 2 O and O 2 ) So that the threshold voltage is easily changed.
Transition metal dicalconeide semiconductors show very high electrical characteristics compared to silicon semiconductors, but there are hysteresis phenomena that make them difficult to commercialize. Therefore, there is a demand for a technique capable of improving device performance deterioration due to hysteresis, which has a certain electrical characteristic.
An embodiment of the present invention is a method of manufacturing a semiconductor device including a transition metal dicarcene active layer having a surface treated by plasma using oxygen or an oxygen compound and a passivation layer uniformly formed on the transition metal dicarcone active layer, And a method of manufacturing the same.
A transition metal dicalcone thin film transistor according to an embodiment of the present invention includes a substrate; A transition metal dicarcogenide active layer formed on the substrate; A source electrode and a drain electrode spaced apart from each other on the active layer; A passivation layer formed on the active layer to protect the active layer; And a gate electrode formed on the passivation layer, wherein the active layer is surface-treated with a plasma using oxygen (O 2 ) or an oxygen compound, and the passivation layer is formed by atomic layer deposition (ALD), plasma enhanced chemical vapor deposition ) Or a sputtering method.
In the transition metal diccogenide thin film transistor according to an embodiment of the present invention, the active layer is formed of molybdenum disulfide (MoS 2 ), molybdenum molybdenum (MoSe 2 ), molybdenum molybdenum (MoTe 2 ), tungsten disulfide 2 ), tungsten selenide (WSe 2 ), and tungsten telluride (WTe 2 ).
In one embodiment of the present invention, the passivation layer is made of a material selected from the group consisting of aluminum oxide (Al 2 O 3 ), hafnium oxide (HfO 2 ), silicon oxide (SiO 2 ), magnesium oxide (MgO) And may include at least one selected from the group consisting of yttrium oxide (Y 2 O 3 ), titanium oxide (TiO 2 ), nitrogen oxide (SiN x ), and an organic film.
According to another aspect of the present invention, there is provided a method of fabricating a transition metal dicalcone thin film transistor including: forming a transition metal dicalcogenide active layer on a substrate; Surface-treating the active layer using an oxygen (O 2 ) plasma or an oxygen compound plasma; Forming a source electrode and a drain electrode on the active layer so as to be spaced apart from each other; Forming a passivation layer for protecting the active layer on the active layer using atomic layer deposition (ALD), plasma enhanced chemical vapor deposition (PECVD), or sputtering; And forming a gate electrode on the passivation layer.
In the method of manufacturing a transition metal diccogenide thin film transistor according to another embodiment of the present invention, the surface treatment time of the active layer using the oxygen plasma may be 30 seconds to 60 seconds.
In another embodiment of the present invention, in the method of manufacturing a transition metal dicalcone nitride thin film transistor, the power of the oxygen plasma may be 50 W to 180 W.
In another embodiment of the present invention, there is provided a method of manufacturing a transition metal dicalcone nitride thin film transistor, wherein the active layer is formed of molybdenum disulfide (MoS 2 ), molybdenum molybdenum (MoSe 2 ), molybdenum disodium (MoTe 2 ), tungsten disulfide WS 2 ), tungsten selenide (WSe 2 ), and tungsten telluride (WTe 2 ).
In another embodiment of the present invention, there is provided a method of manufacturing a transition metal disalcone thin film transistor, wherein the passivation layer is formed of a material selected from the group consisting of aluminum oxide (Al 2 O 3 ), hafnium oxide (HfO 2 ), silicon oxide (SiO 2 ) ), Yttrium oxide (Y 2 O 3 ), titanium oxide (TiO 2 ), nitrogen oxide (SiN x ), and an organic film.
In the transition metal decalcogenide thin film transistor according to an embodiment of the present invention, the transition metal dicalcogenide active layer is surface-treated with an oxygen (O 2 ) plasma or an oxygen compound plasma to form a transition metal dicalcogenide The surface of the active layer is changed to be hydrophilic so that the passivation layer formed on the transition metal decalcogenide active layer by atomic layer deposition (ALD), plasma enhanced chemical vapor deposition (PECVD), or sputtering is more uniformly grown .
In addition, the transition metal decalcogenide thin film transistor including the transition metal dicalcogenide active layer surface-treated with an oxygen (O 2 ) plasma or an oxygen compound plasma according to an embodiment of the present invention includes a turn on current region And the turn-off current region are constantly varied, and the on / off current characteristics due to the transition metal decalcogenide are maintained, and the carrier mobility can be improved.
In the transition metal diccoconjunctive thin film transistor according to an embodiment of the present invention, a passivation layer is formed on the transition metal dicarcogenide active layer so that the transition metal dicarconeide active layer is prevented from being affected by external factors such as moisture and hydrogen. Whereby the inherent electrical properties of the transition metal dicalcogenide active layer can be prevented from deteriorating.
Further, in the transition metal decalcane thin film transistor including the passivation layer according to an embodiment of the present invention, the hysteresis in which the transition metal decalcone thin film transistor is deformed can be reduced.
In addition, since the passivation layer according to an embodiment of the present invention can simultaneously perform the role of the gate insulating layer, it is unnecessary to further form a gate insulating layer, thereby reducing the size of the semiconductor device, Time can be shortened.
Also, the passivation layer according to an embodiment of the present invention may be formed by atomic layer deposition on the transition metal dicarcogenide active layer, and may be formed with a large area and a uniform thickness, and in particular, may be formed by plasma atomic layer deposition , It can be manufactured by a low-temperature process.
Further, the passivation layer according to one aspect of the present invention can be formed of a transparent oxide such as aluminum oxide, so that the light stability of the transition metal decalcogenide thin film transistor can be improved.
FIGS. 1 to 5 are views illustrating a method of manufacturing a transition metal dicalcone thin film transistor according to an embodiment of the present invention.
6 is a cross-sectional view schematically showing a transition metal dicalcone thin film transistor according to an embodiment of the present invention.
FIG. 7 is a flowchart illustrating a method of manufacturing a transition metal dicalcone thin film transistor according to an embodiment of the present invention. Referring to FIG.
FIGS. 8 to 11 are graphs showing electrical characteristics of the transition metal decalcogenide thin film transistor according to the oxygen plasma surface treatment time of the transition metal dicalcogenide active layer according to one aspect of the present invention. FIG.
12 to 14 are graphs showing electrical characteristics of a transition metal decalcogenide thin film transistor according to the power of an oxygen plasma for surface-treating a transition metal dicarcogenide active layer according to one aspect of the present invention.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings and accompanying drawings, but the present invention is not limited to or limited by the embodiments.
The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. It is noted that the terms "comprises" and / or "comprising" used in the specification are intended to be inclusive in a manner similar to the components, steps, operations, and / Or additions.
As used herein, the terms "embodiment," "example," "side," "example," and the like should be construed as advantageous or advantageous over any other aspect or design It does not.
Also, the term 'or' implies an inclusive or 'inclusive' rather than an exclusive or 'exclusive'. That is, unless expressly stated otherwise or clear from the context, the expression 'x uses a or b' means any of the natural inclusive permutations.
Also, the phrase "a" or "an ", as used in the specification and claims, unless the context clearly dictates otherwise, or to the singular form, .
It will also be understood that when an element such as a film, layer, region, configuration request, etc. is referred to as being "on" or "on" another element, And the like are included.
A transition metal dicalcone thin film transistor according to an embodiment of the present invention includes: a substrate; A transition metal dicarcogenide active layer formed on the substrate; A source electrode and a drain electrode spaced apart from each other on the active layer; A passivation layer formed on the active layer to protect the active layer; And a gate electrode formed on the passivation layer.
In the transition metal diccogenide thin film transistor according to an embodiment of the present invention, the transition metal decalcogenide active layer is surface-treated with plasma using oxygen (O 2 ) or an oxygen compound, and the passivation layer is subjected to atomic layer deposition , And is formed on the transition metal decalcogenide to protect the transition metal decalcogenide active layer by ALD, plasma enhanced chemical vapor deposition (PECVD), or sputtering.
Hereinafter, a transition metal dicalcone thin film transistor and a method of manufacturing the same according to an embodiment of the present invention will be described with reference to FIGS. 1 to 6. FIG.
6 is a cross-sectional view schematically showing a transition metal dicalcone thin film transistor according to an embodiment of the present invention.
6, a transition metal dicalcone thin film transistor according to an embodiment of the present invention is a top gate thin film transistor including the following components: a
In the transition metal diccogenide thin film transistor according to an embodiment of the present invention, the transition metal dicarconeide
First, the substrate 100 may be a substrate used for manufacturing a general semiconductor device. For example, the
In particular, a silicon substrate may be used as the
The transition metal dicalcogenide
Transition metal dicalcogenide is a compound consisting of transition metal and chalcogen. It is composed of strong interlayer covalent bonds in the inplane, and interlayer of multiple layers of transition metal dicalcogenide It has a layered structure connected by a weak van der Waals force. Such a transition metal dicalcogenide exhibits a semiconductor characteristic with a band gap.
The transition metal dicalcogenide
The transition metal dicalcogenide
Transition metal radical chalcogenides
The transition metal dicalcogenide
The transition metal dicalcogenide
The oxygen (O 2 ) or oxygen compound is collectively referred to as an oxygen element or an oxygen element. Specifically, the oxygen (O 2 ) or the oxygen compound may be O x (O 2 , O 3 ) or NO x (NO, NO 2 ).
When the transition metal dicalcogenide
Specifically, when the transition metal dicalcogenide
When the surface of the transition metal dicalcogenide
Specifically, when an oxide layer is formed on a hydrophobic transition metal decalcogenide layer by atomic layer deposition, an oxide layer is aggregated like an island structure. This phenomenon can be explained by the atomic layer deposition method, which is a self-limiting reaction in which one reactant is chemically adsorbed on a substrate on which a thin film is deposited, and a second or third gas is chemically adsorbed on the substrate, (self-limiting reaction).
Thus, the interaction between the reactants and the surface of the deposited material has a significant effect. Hydrophilic materials such as aluminum oxide used as a passivation layer are uniformly deposited on a hydrophilic surface while limited deposition occurs on a hydrophobic surface.
The
A method of fabricating a transition metal dicalconeide thin film transistor according to an embodiment of the present invention includes forming a transition metal dicalcogenide active layer by using an oxygen plasma to uniformly deposit an oxide layer used as a passivation layer on the transition metal dicalcogenide active layer, And the surface of the active layer is treated.
When a passivation layer is deposited without plasma treatment using an oxygen or an oxygen compound on the transition metal dicalcogenide active layer, deterioration of characteristics of the device in which the off current abruptly increases may be caused. As described above, when the oxide film is formed on the transition metal dicarcogenide active layer whose surface is hydrophobic without pretreatment, the oxide film is not uniformly formed on the surface of the transition metal dicarcogenide active layer.
When the surface of the transition metal dicalcogenide active layer is treated with a plasma using oxygen or an oxygen compound, the surface of the transition metal dicalcogenide active layer is converted into hydrophilic by filling vacancies of a part of the chalcogen on the surface, n-type doping is effected to suppress the rise of the off current, thereby reducing the hysteresis while maintaining the electrical characteristics of the semiconductor device constant.
Therefore, the transition metal dicalconeide thin film transistor including the transition metal dicalcogenide
The
The
The
The
Specifically, the
The
The
The
A
The
The organic film may be a general general purpose polymer (PMMA, PS), a polymer derivative having a phenol group, an acrylic polymer, an imide polymer, an aryl ether polymer, an amide polymer, a fluorine polymer, a p- Based polymers, blends thereof, and the like.
Further, the
The
The
For example, the
Hereinafter, a method for fabricating a transition metal dicalcone thin film transistor according to an embodiment of the present invention will be described in detail with reference to FIGS. 1 to 7. FIG.
FIGS. 1 to 5 are views for explaining a method of manufacturing a transition metal decalcone thin film transistor according to an embodiment of the present invention, and FIG. 6 is a cross-sectional view of a transition metal decalcone thin film transistor Fig. 7 is a flowchart illustrating a method of manufacturing a transition metal dicalcone thin film transistor according to an embodiment of the present invention.
Referring to FIG. 7, a method of fabricating a transition metal dicalcone thin film transistor according to an embodiment of the present invention includes forming a transition metal dicalcogenide active layer on a substrate (S110); Step using oxygen (O 2) plasma or an oxygen plasma to compound the active layer subjected to surface treatment (S120); Forming a source electrode and a drain electrode on the active layer so as to be spaced apart from each other (S130); (S140) forming a passivation layer for protecting the active layer on the active layer using atomic layer deposition (ALD), plasma enhanced chemical vapor deposition (PECVD), or sputtering; And forming a gate electrode on the passivation layer (S150).
Referring to FIG. 1, a schematic view of a
The substrate 100 may be a substrate used to fabricate general semiconductor devices. For example, the
In particular, a silicon substrate may be used as the
Referring to step S110 of FIGS. 2 and 7, a transition metal dicalcogenide
The transition metal dicalcogenide
Specifically, the transfer method is a method of mechanically or chemically peeling and transferring a single-layer or multi-layer transition metal decalcogenide from a single crystal mass. In addition, the transfer method can be transferred using a transition metal dicalcogenide layer synthesized in a large area.
Meanwhile, in the case of the deposition method, the transition
The transition metal dicalcogenide
The transition metal dicalcogenide
The transition metal dicalcogenide
Transition metal radical chalcogenides
Referring to step S120 of FIG. 7, the transition metal dicalcogenide
The oxygen (O 2 ) or the oxygen compound collectively refers to substances containing an oxygen element or an oxygen element. Specifically, oxygen (O 2 ) or an oxygen compound is O x (O 2 , O 3 ) or NO x , NO 2 ).
When the transition metal decalcogenide
In addition, when the surface of the transition metal dicalcogenide
The transition metal dicalconeide thin film transistor including the transition metal dicalcogenide
The surface treatment of the oxygen (O 2 ) plasma or the oxygen compound plasma on the surface of the transition metal dicalcogenide
8 to 11 are graphs showing electrical characteristics of the transition metal decalcogenide thin film transistor according to the oxygen (O 2 ) plasma surface treatment time of the transition metal dicarcogenide
Specifically, FIG. 8 is a graph showing changes in source and drain electrode currents (I ds ) according to the gate electrode voltage (V g ) of the transition metal decalcogenide thin film transistor manufactured by oxygen plasma surface treatment of the MoS 2 active layer for 30 seconds to be. Fig. 9 shows the oxygen plasma surface treatment time of 60 seconds, Fig. 10 shows 90 seconds, and Fig. 11 shows 120 seconds. Here, the power of the oxygen plasma is 150 W.
In Figure 8 to 11 pristine is the initial state of an MoS 2 active layer to a plasma surface treatment, passivation is MoS 2 after the oxygen plasma surface treatment the active layer, the aluminum oxide in the MoS the second active layer (Al 2 O 3) passivation layer to The results of measurement of electrical characteristics of the formed samples are shown. Also, forward refers to forward bias and reverse refers to reverse bias.
Referring to FIGS. 8 to 11, it can be confirmed that the surface property of the transition metal decalcane thin film transistor fabricated according to one aspect of the present invention is changed from hydrophobic to hydrophilic by surface treatment under proper conditions.
Further, if pretreatment is carried out under appropriate conditions (oxygen plasma intensity: 150 W, processing time: 30 to 60 seconds) before formation of the passivation layer through atomic layer deposition, as shown in FIGS. 8 and 9, And the reverse bias, the turn-on voltage and the on / off current ratio are kept constant, and the mobility (u) of the carrier increases.
However, as shown in FIGS. 10 and 11, when the oxygen plasma treatment time is set to 90 to 120 seconds and excessive pretreatment is performed over a proper condition, it is confirmed that the electrical characteristics are deteriorated.
The oxygen plasma power during the surface treatment of the oxygen (O 2 ) plasma with respect to the surface of the transition metal dicalcogenide
FIGS. 12 to 14 are graphs showing electrical characteristics of a transition metal decalcogenide thin film transistor according to the power of an oxygen plasma for surface-treating the transition metal dicalcogenide
Specifically, FIGS. 12 to 14 show the results obtained by surface-treating the MoS 2 active layer by varying the power of the oxygen plasma to 100 W (see FIG. 12), 125 W (see FIG. 13) and 150 W (I ds ) according to the gate-source electrode voltage (V gs ) of the transition metal dicalcone thin film transistor. Here, the oxygen plasma surface treatment time is 60 seconds.
12 to 14 in pristine is the initial state of MoS 2 active not a plasma surface treatment, passivation after the MoS 2 active oxygen plasma surface treatment, MoS 2 of aluminum oxide on the active layer (Al 2 O 3) passivation layer to And the measurement result of electrical characteristics of the formed sample is shown. Forward refers to a forward bias and reverse refers to a reverse bias.
12 to 14, when the oxygen plasma power is 150 W (see FIG. 14), the hysteresis phenomenon is most effectively reduced, and the transition metal hafnium thin film transistor produced according to one aspect of the present invention exhibits 125 W And 100 W, the hysteresis phenomenon is relatively lessened as the oxygen plasma power is lowered. That is, as the oxygen plasma power is decreased, the reduction efficiency of the hysteresis phenomenon decreases.
3 and the step S130 of Fig. 7 when, the oxygen (O 2) plasma or a functionalized transition metal radical chalcogenides
The
The
Referring to step S140 of FIGS. 4 and 7, a
The
Atomic Layer Deposition (ALD) is generally performed by chemically adsorbing a precursor (molecule) onto the surface of a substrate using a chemical bond with the substrate surface, then substituting the next precursor through the surface chemistry for the adsorbed precursor, (cyclic repetition) by alternately performing adsorption and substitution by reaction such as protonation, so that layer-by-layer deposition is possible and the oxide can be deposited as thin as possible.
The atomic layer deposition method can be divided into thermal ALD and plasma enhanced ALD (PEALD).
The thermal atomic layer deposition method is a method in which thermal energy is involved in the reaction of a precursor and an oxidizing agent. The plasma atomic layer deposition method is a method of generating a reaction by decomposing a reaction gas into a plasma by applying power to a reaction chamber, Can be divided into a remote plasma ALD and a direct plasma ALD according to a plasma generating apparatus.
In the atomic layer deposition, water vapor (H 2 O), oxygen (O 2 ), oxygen plasma (O 2 plasma), ozone (O 3 ), alcohol or the like can be used as the oxygen precursor.
The
The
The
A
In addition, the
The
The
The
The
The
Referring to step S150 of FIGS. 5 and 7, a
The
For example, the
Referring to FIG. 6, a contact hole h for contacting the
The transition metal dicalconeide thin film transistor fabricated according to an embodiment of the present invention includes a
Although the transition metal decalcone thin film transistor having the top gate structure has been described above with reference to the embodiment of the present invention, the transition metal decalcone thin film transistor according to another embodiment of the present invention has the bottom gate structure Of course.
A transition metal dicalcone thin film transistor according to an embodiment of the present invention includes a transition metal dicalcogenide active layer surface-treated with oxygen (O 2 ) plasma. The surface of the transition metal dicarcogenide active layer surface-treated with oxygen (O 2 ) plasma exhibits hydrophilicity, so that the passivation layer formed on the transition metal dicarcone active layer can be more uniformly formed.
In addition, the change widths of the turn on current region and the turn off current region are constant and the on / off current characteristics due to the transition metal decalcogenide are maintained, Mobility can be improved.
A transition metal decalcone thin film transistor according to an embodiment of the present invention is characterized in that it includes a passivation layer formed by atomic layer deposition on a transition metal decalcogenide active layer. The passivation layer prevents the transition metal decalcogenide active layer from being affected by external factors such as moisture and hydrogen, thereby preventing the inherent electrical characteristics of the transition metal decalcogenide active layer from deteriorating.
In addition, the passivation layer can simultaneously perform the role of the gate insulating layer, thereby eliminating the need of further forming a gate insulating layer, reducing the size of the semiconductor device, and shortening the processing time.
Further, the passivation layer can be formed by atomic layer deposition on the transition metal dicarcogenide active layer, and can be formed with a large area and a uniform thickness, and can be manufactured by a low-temperature process, especially when formed by plasma atomic layer deposition have.
Further, the passivation layer can be formed of a transparent oxide such as aluminum oxide, so that the light stability of the transition metal decalcogenide thin film transistor can be improved.
Further, in the transition metal decalcane thin film transistor including the passivation layer according to an embodiment of the present invention, the hysteresis in which the transition metal decalcone thin film transistor is deformed can be reduced.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, This is possible.
Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined by the equivalents of the claims, as well as the claims.
110: substrate 120: transition metal dicalcogenide active layer
130a:
140: passivation layer 150: gate electrode
Claims (8)
A transition metal dicarcogenide active layer formed on the substrate;
A source electrode and a drain electrode spaced apart from each other on the active layer;
A passivation layer formed on the active layer to protect the active layer; And
A gate electrode formed on the passivation layer,
/ RTI >
The active layer is surface-treated with a plasma using oxygen (O 2 ) or an oxygen compound,
Wherein the passivation layer is formed by atomic layer deposition (ALD), plasma enhanced chemical vapor deposition (PECVD), or sputtering.
The active layer may be at least one of molybdenum disulfide (MoS 2 ), molybdenum selenide (MoSe 2 ), molybdenum disulfide (MoTe 2 ), tungsten disulfide (WS 2 ), tungsten selenide (WSe 2 ) and tungsten 2 ). ≪ RTI ID = 0.0 > 11. < / RTI >
The passivation layer is aluminum oxide (Al 2 O 3), hafnium (HfO 2), silicon oxide (SiO 2), magnesium oxide (MgO), yttrium oxide (Y 2 O 3), titanium oxide (TiO 2) oxide, Nitrogen (SiN x ), and an organic film. The transition metal dicalcone thin film transistor according to claim 1,
Surface-treating the active layer using an oxygen (O 2 ) plasma or an oxygen compound plasma;
Forming a source electrode and a drain electrode on the active layer so as to be spaced apart from each other;
Forming a passivation layer for protecting the active layer on the active layer using atomic layer deposition (ALD), plasma enhanced chemical vapor deposition (PECVD), or sputtering; And
Forming a gate electrode on the passivation layer
Wherein the thin film transistor is a thin film transistor.
Wherein the surface treatment time of the active layer using the oxygen plasma is 30 seconds to 60 seconds.
Wherein the power of the oxygen plasma is in the range of 50 W to 180 W. The method of claim 1,
The active layer may be at least one of molybdenum disulfide (MoS 2 ), molybdenum selenide (MoSe 2 ), molybdenum disulfide (MoTe 2 ), tungsten disulfide (WS 2 ), tungsten selenide (WSe 2 ) and tungsten 2 ). ≪ Desc / Clms Page number 20 > 5. A method of fabricating a transition metal disalcone thin film transistor, comprising:
The passivation layer is aluminum oxide (Al 2 O 3), hafnium (HfO 2), silicon oxide (SiO 2), magnesium oxide (MgO), yttrium oxide (Y 2 O 3), titanium oxide (TiO 2) oxide, Nitrogen (SiN x ), and an organic film. The method of manufacturing a transition metal dicalcone thin film transistor according to claim 1,
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