KR101927579B1 - Transition metal dichalcogenide thin film transistor and method of manufacturing the same - Google Patents

Transition metal dichalcogenide thin film transistor and method of manufacturing the same Download PDF

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KR101927579B1
KR101927579B1 KR1020160019946A KR20160019946A KR101927579B1 KR 101927579 B1 KR101927579 B1 KR 101927579B1 KR 1020160019946 A KR1020160019946 A KR 1020160019946A KR 20160019946 A KR20160019946 A KR 20160019946A KR 101927579 B1 KR101927579 B1 KR 101927579B1
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transition metal
active layer
layer
thin film
film transistor
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KR20170098053A (en
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김선국
백종열
홍영기
정철승
문현성
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경희대학교 산학협력단
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Abstract

The present invention discloses a transition metal dicalcone thin film transistor and a method of manufacturing the same. A transition metal dicalcone thin film transistor according to an embodiment of the present invention includes: a substrate; A transition metal dicarcogenide active layer formed on the substrate; A source electrode and a drain electrode spaced apart from each other on the active layer; A passivation layer formed on the active layer to protect the active layer; And a gate electrode formed on the passivation layer. The active layer is surface-treated with plasma using oxygen (O 2 ) or an oxygen compound, and the passivation layer is formed by atomic layer deposition (ALD), plasma enhanced chemical vapor deposition (PECVD), or sputtering do.

Description

TECHNICAL FIELD [0001] The present invention relates to a thin film transistor of a transition metal diccogenide and a method of manufacturing the thin film transistor. BACKGROUND ART < RTI ID = 0.0 >

The present invention relates to a transition metal decalcogenide thin film transistor and a method of manufacturing the same, and more particularly, to a transition metal decalcogenide active layer surface-treated with a plasma using oxygen or an oxygen compound, To a transition metal decalcogenide thin film transistor having improved electrical characteristics including a passivation layer formed and a method of manufacturing the same.

The characteristics of the thin film transistor may vary depending on the material of the active layer (channel layer or semiconductor layer). That is, the material of the active layer may be an important factor in determining the characteristics of the thin film transistor. For example, the carrier mobility and the on / off current ratio of the thin film transistor depend on the characteristics of the active layer.

The two-dimensional material has a very strong bonding force between the atoms in one layer as a covalent bond, and the layers are weakly bonded to each other and exist in a stacked layer form. Two-dimensional materials are characterized in that they are easily peeled mechanically into a single layer or an ultra-thin layer of several layers.

Among the two-dimensional materials, graphene has excellent thermal, electrical conductivity and charge mobility, and has remarkable molecular barrier properties and mechanical strength. However, graphene is not suitable for use as a semiconductor due to the characteristic of a zero band gap, and when attempting doping or microstructure modification in order to increase the band gap, mobility drops sharply, .

Accordingly, while studying new two-dimensional semiconductor materials, a molybdenum disulfide (MoS 2 ) thin film transistor reported by a research group of Swiss EPFL in 2011 has an electron mobility of 200 cm 2 / Vs or more, an on / off current ratio of 10 8 , and many research groups at home and abroad have been concentrating on research on transition metal dicalconeide semiconductors such as MoS 2 and WSe 2 .

Transition metal dichalcogenides (TMD) are represented by the formula of MX 2 , where M is a transition metal element (commonly referred to as an element in which electrons exist in the d-orbital, groups 3 to 12 of the periodic table), X is a chalcogen element (Group 16 of the periodic table). Transition metal dicalcogenide materials exhibit metal, superconductivity, or semiconductor properties, depending on the constituent elements, among which materials exhibiting semiconductor properties are sulfides, selenides, and tellurium.

On the other hand, when the transition metal dicalcogenide is used as an active layer of a semiconductor device, unlike graphene, the on / off current ratio characteristics are excellent and the carrier mobility is relatively high. However, the transition between the forward bias and the reverse bias Hysteresis greatly reduces the reliability of semiconductor devices.

This hysteresis is an effect of trapping and releasing electrons in the forward and reverse biases on the surface of the semiconductor material, which are mainly atmospheric gases (mainly H 2 O and O 2 ) So that the threshold voltage is easily changed.

Transition metal dicalconeide semiconductors show very high electrical characteristics compared to silicon semiconductors, but there are hysteresis phenomena that make them difficult to commercialize. Therefore, there is a demand for a technique capable of improving device performance deterioration due to hysteresis, which has a certain electrical characteristic.

Korean Patent Laid-Open Publication No. 10-2014-0072789 (2014. 06. 13, a field-effect transistor having a transition metal decalcogenide channel and a manufacturing method thereof)

An embodiment of the present invention is a method of manufacturing a semiconductor device including a transition metal dicarcene active layer having a surface treated by plasma using oxygen or an oxygen compound and a passivation layer uniformly formed on the transition metal dicarcone active layer, And a method of manufacturing the same.

A transition metal dicalcone thin film transistor according to an embodiment of the present invention includes a substrate; A transition metal dicarcogenide active layer formed on the substrate; A source electrode and a drain electrode spaced apart from each other on the active layer; A passivation layer formed on the active layer to protect the active layer; And a gate electrode formed on the passivation layer, wherein the active layer is surface-treated with a plasma using oxygen (O 2 ) or an oxygen compound, and the passivation layer is formed by atomic layer deposition (ALD), plasma enhanced chemical vapor deposition ) Or a sputtering method.

In the transition metal diccogenide thin film transistor according to an embodiment of the present invention, the active layer is formed of molybdenum disulfide (MoS 2 ), molybdenum molybdenum (MoSe 2 ), molybdenum molybdenum (MoTe 2 ), tungsten disulfide 2 ), tungsten selenide (WSe 2 ), and tungsten telluride (WTe 2 ).

In one embodiment of the present invention, the passivation layer is made of a material selected from the group consisting of aluminum oxide (Al 2 O 3 ), hafnium oxide (HfO 2 ), silicon oxide (SiO 2 ), magnesium oxide (MgO) And may include at least one selected from the group consisting of yttrium oxide (Y 2 O 3 ), titanium oxide (TiO 2 ), nitrogen oxide (SiN x ), and an organic film.

According to another aspect of the present invention, there is provided a method of fabricating a transition metal dicalcone thin film transistor including: forming a transition metal dicalcogenide active layer on a substrate; Surface-treating the active layer using an oxygen (O 2 ) plasma or an oxygen compound plasma; Forming a source electrode and a drain electrode on the active layer so as to be spaced apart from each other; Forming a passivation layer for protecting the active layer on the active layer using atomic layer deposition (ALD), plasma enhanced chemical vapor deposition (PECVD), or sputtering; And forming a gate electrode on the passivation layer.

In the method of manufacturing a transition metal diccogenide thin film transistor according to another embodiment of the present invention, the surface treatment time of the active layer using the oxygen plasma may be 30 seconds to 60 seconds.

In another embodiment of the present invention, in the method of manufacturing a transition metal dicalcone nitride thin film transistor, the power of the oxygen plasma may be 50 W to 180 W.

In another embodiment of the present invention, there is provided a method of manufacturing a transition metal dicalcone nitride thin film transistor, wherein the active layer is formed of molybdenum disulfide (MoS 2 ), molybdenum molybdenum (MoSe 2 ), molybdenum disodium (MoTe 2 ), tungsten disulfide WS 2 ), tungsten selenide (WSe 2 ), and tungsten telluride (WTe 2 ).

In another embodiment of the present invention, there is provided a method of manufacturing a transition metal disalcone thin film transistor, wherein the passivation layer is formed of a material selected from the group consisting of aluminum oxide (Al 2 O 3 ), hafnium oxide (HfO 2 ), silicon oxide (SiO 2 ) ), Yttrium oxide (Y 2 O 3 ), titanium oxide (TiO 2 ), nitrogen oxide (SiN x ), and an organic film.

In the transition metal decalcogenide thin film transistor according to an embodiment of the present invention, the transition metal dicalcogenide active layer is surface-treated with an oxygen (O 2 ) plasma or an oxygen compound plasma to form a transition metal dicalcogenide The surface of the active layer is changed to be hydrophilic so that the passivation layer formed on the transition metal decalcogenide active layer by atomic layer deposition (ALD), plasma enhanced chemical vapor deposition (PECVD), or sputtering is more uniformly grown .

In addition, the transition metal decalcogenide thin film transistor including the transition metal dicalcogenide active layer surface-treated with an oxygen (O 2 ) plasma or an oxygen compound plasma according to an embodiment of the present invention includes a turn on current region And the turn-off current region are constantly varied, and the on / off current characteristics due to the transition metal decalcogenide are maintained, and the carrier mobility can be improved.

In the transition metal diccoconjunctive thin film transistor according to an embodiment of the present invention, a passivation layer is formed on the transition metal dicarcogenide active layer so that the transition metal dicarconeide active layer is prevented from being affected by external factors such as moisture and hydrogen. Whereby the inherent electrical properties of the transition metal dicalcogenide active layer can be prevented from deteriorating.

Further, in the transition metal decalcane thin film transistor including the passivation layer according to an embodiment of the present invention, the hysteresis in which the transition metal decalcone thin film transistor is deformed can be reduced.

In addition, since the passivation layer according to an embodiment of the present invention can simultaneously perform the role of the gate insulating layer, it is unnecessary to further form a gate insulating layer, thereby reducing the size of the semiconductor device, Time can be shortened.

Also, the passivation layer according to an embodiment of the present invention may be formed by atomic layer deposition on the transition metal dicarcogenide active layer, and may be formed with a large area and a uniform thickness, and in particular, may be formed by plasma atomic layer deposition , It can be manufactured by a low-temperature process.

Further, the passivation layer according to one aspect of the present invention can be formed of a transparent oxide such as aluminum oxide, so that the light stability of the transition metal decalcogenide thin film transistor can be improved.

FIGS. 1 to 5 are views illustrating a method of manufacturing a transition metal dicalcone thin film transistor according to an embodiment of the present invention.
6 is a cross-sectional view schematically showing a transition metal dicalcone thin film transistor according to an embodiment of the present invention.
FIG. 7 is a flowchart illustrating a method of manufacturing a transition metal dicalcone thin film transistor according to an embodiment of the present invention. Referring to FIG.
FIGS. 8 to 11 are graphs showing electrical characteristics of the transition metal decalcogenide thin film transistor according to the oxygen plasma surface treatment time of the transition metal dicalcogenide active layer according to one aspect of the present invention. FIG.
12 to 14 are graphs showing electrical characteristics of a transition metal decalcogenide thin film transistor according to the power of an oxygen plasma for surface-treating a transition metal dicarcogenide active layer according to one aspect of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings and accompanying drawings, but the present invention is not limited to or limited by the embodiments.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. It is noted that the terms "comprises" and / or "comprising" used in the specification are intended to be inclusive in a manner similar to the components, steps, operations, and / Or additions.

As used herein, the terms "embodiment," "example," "side," "example," and the like should be construed as advantageous or advantageous over any other aspect or design It does not.

Also, the term 'or' implies an inclusive or 'inclusive' rather than an exclusive or 'exclusive'. That is, unless expressly stated otherwise or clear from the context, the expression 'x uses a or b' means any of the natural inclusive permutations.

Also, the phrase "a" or "an ", as used in the specification and claims, unless the context clearly dictates otherwise, or to the singular form, .

It will also be understood that when an element such as a film, layer, region, configuration request, etc. is referred to as being "on" or "on" another element, And the like are included.

A transition metal dicalcone thin film transistor according to an embodiment of the present invention includes: a substrate; A transition metal dicarcogenide active layer formed on the substrate; A source electrode and a drain electrode spaced apart from each other on the active layer; A passivation layer formed on the active layer to protect the active layer; And a gate electrode formed on the passivation layer.

In the transition metal diccogenide thin film transistor according to an embodiment of the present invention, the transition metal decalcogenide active layer is surface-treated with plasma using oxygen (O 2 ) or an oxygen compound, and the passivation layer is subjected to atomic layer deposition , And is formed on the transition metal decalcogenide to protect the transition metal decalcogenide active layer by ALD, plasma enhanced chemical vapor deposition (PECVD), or sputtering.

Hereinafter, a transition metal dicalcone thin film transistor and a method of manufacturing the same according to an embodiment of the present invention will be described with reference to FIGS. 1 to 6. FIG.

6 is a cross-sectional view schematically showing a transition metal dicalcone thin film transistor according to an embodiment of the present invention.

6, a transition metal dicalcone thin film transistor according to an embodiment of the present invention is a top gate thin film transistor including the following components: a substrate 110; a substrate 110; A source electrode 130a and a drain electrode 130b formed on the transition metal dicarconeide active layer 120 so as to be spaced apart from each other, a transition metal dicarconeide active layer 120 formed on the transition metal dicarconeide active layer 120, And a gate electrode 150 formed on the passivation layer 140 and the passivation layer 140 formed to protect the transition metal dicalcogenide active layer 120. [

In the transition metal diccogenide thin film transistor according to an embodiment of the present invention, the transition metal dicarconeide active layer 120 may be formed using a plasma using oxygen (O 2 ) or an oxygen compound, that is, an oxygen (O 2 ) And the passivation layer 140 is formed by atomic layer deposition (ALD), plasma chemical vapor deposition (PECVD), or sputtering.

First, the substrate 100 may be a substrate used for manufacturing a general semiconductor device. For example, the substrate 110 may be any one of a glass substrate, a plastic substrate, and a silicon substrate.

In particular, a silicon substrate may be used as the substrate 110, and a silicon oxide (SiO 2 ) layer may be further formed on the silicon substrate 110 in order to insulate the transition metal dicarconeide active layer 120. That is, a silicon oxide layer may be further formed between the silicon substrate 110 and the transition metal dicarconeide active layer 120.

The transition metal dicalcogenide active layer 120 is formed of a transition metal dichalcogenide (TMD), and the transition metal dicalcogenide has the following characteristics.

Transition metal dicalcogenide is a compound consisting of transition metal and chalcogen. It is composed of strong interlayer covalent bonds in the inplane, and interlayer of multiple layers of transition metal dicalcogenide It has a layered structure connected by a weak van der Waals force. Such a transition metal dicalcogenide exhibits a semiconductor characteristic with a band gap.

The transition metal dicalcogenide active layer 120 may have a single-layer structure or a multi-layer structure. When the transition metal dicalcogenide active layer 120 is formed of a plurality of layers, the movement path of the carriers may be increased and the carrier mobility may be improved.

The transition metal dicalcogenide active layer 120 has a two-dimensional plate-like structure in which two chalcogen elements are bonded to any one of transition metals, for example, Mo, W and Nb. As the chalcogen, S, Se and Te and the like can be used.

Transition metal radical chalcogenides active layer 120 are molybdenum disulfide (MoS 2), a selenide, molybdenum (MoSe 2), the telru ryumhwa molybdenum (MoTe 2), tungsten disulfide (WS 2), a selenide, tungsten (WSe 2) And tungsten telluride (WTe 2 ).

The transition metal dicalcogenide active layer 120 may be formed variously by a transfer method or a deposition method.

The transition metal dicalcogenide active layer 120 according to an embodiment of the present invention is characterized in that it is surface-treated with a plasma using oxygen (O 2 ) or an oxygen compound, that is, an oxygen plasma or an oxygen compound plasma.

The oxygen (O 2 ) or oxygen compound is collectively referred to as an oxygen element or an oxygen element. Specifically, the oxygen (O 2 ) or the oxygen compound may be O x (O 2 , O 3 ) or NO x (NO, NO 2 ).

When the transition metal dicalcogenide active layer 120 is surface-treated with plasma using oxygen (O 2 ) or an oxygen compound, the surface of the transition metal dicalcogenide active layer 120 having hydrophobicity is changed to exhibit hydrophilicity.

Specifically, when the transition metal dicalcogenide active layer 120 made of, for example, MoS 2 is surface-treated with oxygen (O 2 ) plasma, oxygen is bonded to the sulfur vacancy of the sulfur element do. As a result, the surface of the transition metal dicalcogenide active layer 120 has oxygen, and the surface of the transition metal dicalcogenide active layer 120 is relatively hydrophilic due to the presence of oxygen.

When the surface of the transition metal dicalcogenide active layer 120 exhibits hydrophilicity, the passivation layer 140 to be formed by the ALD or the like is more uniformly grown on the transition metal dicalcogenide active layer 120 .

Specifically, when an oxide layer is formed on a hydrophobic transition metal decalcogenide layer by atomic layer deposition, an oxide layer is aggregated like an island structure. This phenomenon can be explained by the atomic layer deposition method, which is a self-limiting reaction in which one reactant is chemically adsorbed on a substrate on which a thin film is deposited, and a second or third gas is chemically adsorbed on the substrate, (self-limiting reaction).

Thus, the interaction between the reactants and the surface of the deposited material has a significant effect. Hydrophilic materials such as aluminum oxide used as a passivation layer are uniformly deposited on a hydrophilic surface while limited deposition occurs on a hydrophobic surface.

The passivation layer 140 is formed on the transition metal decalcogenide active layer 120 having a hydrophilic surface when plasma treatment is performed using oxygen or an oxygen compound so that the surface of the transition metal dicalcogenide active layer 120 is hydrophilic. Is more uniformly formed.

A method of fabricating a transition metal dicalconeide thin film transistor according to an embodiment of the present invention includes forming a transition metal dicalcogenide active layer by using an oxygen plasma to uniformly deposit an oxide layer used as a passivation layer on the transition metal dicalcogenide active layer, And the surface of the active layer is treated.

 When a passivation layer is deposited without plasma treatment using an oxygen or an oxygen compound on the transition metal dicalcogenide active layer, deterioration of characteristics of the device in which the off current abruptly increases may be caused. As described above, when the oxide film is formed on the transition metal dicarcogenide active layer whose surface is hydrophobic without pretreatment, the oxide film is not uniformly formed on the surface of the transition metal dicarcogenide active layer.

When the surface of the transition metal dicalcogenide active layer is treated with a plasma using oxygen or an oxygen compound, the surface of the transition metal dicalcogenide active layer is converted into hydrophilic by filling vacancies of a part of the chalcogen on the surface, n-type doping is effected to suppress the rise of the off current, thereby reducing the hysteresis while maintaining the electrical characteristics of the semiconductor device constant.

Therefore, the transition metal dicalconeide thin film transistor including the transition metal dicalcogenide active layer 120 surface-treated with the oxygen (O 2 ) plasma or the oxygen compound plasma according to an embodiment of the present invention turns on, The change width of the current region and the turn off current region is constant and the carrier mobility can also be improved while maintaining the high on / off current characteristics due to the transition metal decalcogenide .

The source electrode 130a and the drain electrode 130b are formed on the transition metal dicarconeide active layer 120 to be spaced apart from each other.

The source electrode 130a and the drain electrode 130b may be formed of a metal such as Al, Cr, Au, Ti, or Ag and a transparent material such as indium tin oxide (ITO), indium zinc oxide (IZO), or indium tin zinc oxide Oxide, and may be formed as a single layer or multiple layers, or a double layer in which the metal and the transparent oxide are respectively deposited.

The source electrode 130a and the drain electrode 130b are formed by forming an ITO layer having a thickness of 100 nm to 200 nm on the entire surface of the transition metal dicarconeide active layer 120 by RF (Radio Frequency) magnetron sputtering, And may be formed by patterning the ITO layer.

The passivation layer 140 is formed on the transition metal dicalcogenide active layer 120 to protect the transition metal dicalcogenide active layer 120.

Specifically, the passivation layer 140 is formed on the transition metal dicarcogenide active layer 120 to prevent external influences such as moisture and hydrogen acting on the surface of the transition metal dicarconeide active layer 120, It is possible to prevent the intrinsic electrical characteristics of the transition metal dicalcogenide active layer 120 from deteriorating. Thereby reducing the hysteresis in which the transition metal dicalcone thin film transistor is deformed.

The passivation layer 140 is entirely formed to cover the entire substrate 110 on which the transition metal dicarconeide active layer 120, the source electrode 130a and the drain electrode 130b are formed. The passivation layer 140 is formed on the active layer 120, The gate electrode 130a and the drain electrode 130b and the gate electrode 150 to be formed later can be insulated from each other. Thereby, it is not necessary to further form a gate insulating layer, the size of the semiconductor element can be reduced, and the processing time can be shortened.

The passivation layer 140 according to an exemplary embodiment of the present invention is formed by ALD, plasma enhanced chemical vapor deposition (PECVD), or sputtering.

The passivation layer 140 is not limited to atomic layer deposition methods such as thermal ALD or plasma enhanced ALD (PEALD), and may be formed by various atomic layer deposition methods.

A passivation layer 140 according to one aspect of the present invention may be formed by plasma atomic layer deposition (PEALD). When the passivation layer 140 is formed by the plasma atomic layer deposition method, the process temperature can be relatively lowered by the application of the plasma, so that the passivation layer 140 can be manufactured by a low-temperature process and the reactivity between the precursor and the reaction gas is high, It can be formed thin, and can be formed with a large area and a uniform thickness.

The passivation layer 140 is aluminum oxide (Al 2 O 3), hafnium oxide (HfO 2), silicon oxide (SiO 2), magnesium (MgO), yttrium oxide (Y 2 O 3), titanium oxide (TiO 2) , Nitrogen oxide (SiN x ), and an organic film.

The organic film may be a general general purpose polymer (PMMA, PS), a polymer derivative having a phenol group, an acrylic polymer, an imide polymer, an aryl ether polymer, an amide polymer, a fluorine polymer, a p- Based polymers, blends thereof, and the like.

Further, the passivation layer 140 may also be formed as a composite laminate of an inorganic film and an organic film.

The passivation layer 140 according to one aspect of the present invention can be formed of a transparent oxide (oxide film) such as aluminum oxide, thereby improving the light stability of the transition metal decalcogenide thin film transistor.

The gate electrode 150 may be formed of at least one of a metal such as Al, Cr, Au, Ti, or Ag and a transparent oxide such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), or ITZO (Indium Tin Zinc Oxide) And may be formed as a single layer or multiple layers, or a double layer in which the metal and the transparent oxide are respectively deposited.

For example, the gate electrode 150 may be formed by forming an ITO layer having a thickness of 100 nm to 200 nm on the entire surface of the passivation layer 140 using an RF magnetron sputtering method, and then patterning the ITO layer.

Hereinafter, a method for fabricating a transition metal dicalcone thin film transistor according to an embodiment of the present invention will be described in detail with reference to FIGS. 1 to 7. FIG.

FIGS. 1 to 5 are views for explaining a method of manufacturing a transition metal decalcone thin film transistor according to an embodiment of the present invention, and FIG. 6 is a cross-sectional view of a transition metal decalcone thin film transistor Fig. 7 is a flowchart illustrating a method of manufacturing a transition metal dicalcone thin film transistor according to an embodiment of the present invention.

Referring to FIG. 7, a method of fabricating a transition metal dicalcone thin film transistor according to an embodiment of the present invention includes forming a transition metal dicalcogenide active layer on a substrate (S110); Step using oxygen (O 2) plasma or an oxygen plasma to compound the active layer subjected to surface treatment (S120); Forming a source electrode and a drain electrode on the active layer so as to be spaced apart from each other (S130); (S140) forming a passivation layer for protecting the active layer on the active layer using atomic layer deposition (ALD), plasma enhanced chemical vapor deposition (PECVD), or sputtering; And forming a gate electrode on the passivation layer (S150).

Referring to FIG. 1, a schematic view of a substrate 110 according to an embodiment of the present invention is shown.

The substrate 100 may be a substrate used to fabricate general semiconductor devices. For example, the substrate 110 may be any one of a glass substrate, a plastic substrate, and a silicon substrate.

In particular, a silicon substrate may be used as the substrate 110, and a silicon oxide (SiO 2 ) layer may be further formed on the silicon substrate 110 in order to insulate the transition metal dicarconeide active layer 120. That is, a silicon oxide layer may be further formed between the silicon substrate 110 and the transition metal dicarconeide active layer 120.

Referring to step S110 of FIGS. 2 and 7, a transition metal dicalcogenide active layer 120 is formed on the substrate 110. FIG.

The transition metal dicalcogenide active layer 120 can be formed using a transfer method or a deposition method.

Specifically, the transfer method is a method of mechanically or chemically peeling and transferring a single-layer or multi-layer transition metal decalcogenide from a single crystal mass. In addition, the transfer method can be transferred using a transition metal dicalcogenide layer synthesized in a large area.

Meanwhile, in the case of the deposition method, the transition metal dicalcogenide layer 120 is directly deposited on the substrate 110 by using various deposition methods such as chemical vapor deposition (CVD), sputtering or atomic layer deposition (ALD) .

The transition metal dicalcogenide active layer 120 according to one aspect of the present invention can be mechanically peeled and transferred onto the substrate 110 with a mineral such as a molybdenite laminated with a transition metal dicalcogenide material have. Alternatively, transfer can be performed using a large-area synthesized transition metal decalcogenide material layer. Further, instead of the transfer, the transition metal dicalcogenide active layer 120 may be directly deposited on the substrate 110.

The transition metal dicalcogenide active layer 120 may have a single-layer structure or a multi-layer structure. When the transition metal dicalcogenide active layer 120 is formed of a plurality of layers, the movement path of the carriers may be increased and the carrier mobility may be improved.

The transition metal dicalcogenide active layer 120 has a two-dimensional plate-like structure in which two chalcogen elements are bonded to any one of transition metals, for example, Mo, W and Nb. As the chalcogen, S, Se and Te and the like can be used.

Transition metal radical chalcogenides active layer 120 are molybdenum disulfide (MoS 2), a selenide, molybdenum (MoSe 2), the telru ryumhwa molybdenum (MoTe 2), tungsten disulfide (WS 2), a selenide, tungsten (WSe 2) And tungsten telluride (WTe 2 ).

Referring to step S120 of FIG. 7, the transition metal dicalcogenide active layer 120 formed on the substrate 110 is surface-treated using an oxygen (O 2 ) plasma or an oxygen compound plasma.

The oxygen (O 2 ) or the oxygen compound collectively refers to substances containing an oxygen element or an oxygen element. Specifically, oxygen (O 2 ) or an oxygen compound is O x (O 2 , O 3 ) or NO x , NO 2 ).

When the transition metal decalcogenide active layer 120 is surface-treated using an oxygen (O 2 ) plasma or an oxygen compound plasma according to an embodiment of the present invention, the surface of the transition metal dicalcogenide active layer 120 having hydrophobicity Is changed to exhibit hydrophilicity.

In addition, when the surface of the transition metal dicalcogenide active layer 120 exhibits hydrophilicity, the passivation layer 140 to be formed by atomic layer deposition (ALD) will grow more uniformly on the transition metal dicalcogenide active layer 120 .

The transition metal dicalconeide thin film transistor including the transition metal dicalcogenide active layer 120 surface-treated with an oxygen (O 2 ) plasma or an oxygen compound plasma according to an embodiment of the present invention may be turned on ) The change width of the current region and the turn off current region is constant and the high on / off current characteristics due to the transition metal decalcogenide remain intact and the carrier mobility can also be improved have.

The surface treatment of the oxygen (O 2 ) plasma or the oxygen compound plasma on the surface of the transition metal dicalcogenide active layer 120 may be performed for 30 seconds to 120 seconds. Preferably 30 seconds to 90 seconds, and more preferably 30 seconds to 60 seconds.

8 to 11 are graphs showing electrical characteristics of the transition metal decalcogenide thin film transistor according to the oxygen (O 2 ) plasma surface treatment time of the transition metal dicarcogenide active layer 120 according to one aspect of the present invention.

Specifically, FIG. 8 is a graph showing changes in source and drain electrode currents (I ds ) according to the gate electrode voltage (V g ) of the transition metal decalcogenide thin film transistor manufactured by oxygen plasma surface treatment of the MoS 2 active layer for 30 seconds to be. Fig. 9 shows the oxygen plasma surface treatment time of 60 seconds, Fig. 10 shows 90 seconds, and Fig. 11 shows 120 seconds. Here, the power of the oxygen plasma is 150 W.

In Figure 8 to 11 pristine is the initial state of an MoS 2 active layer to a plasma surface treatment, passivation is MoS 2 after the oxygen plasma surface treatment the active layer, the aluminum oxide in the MoS the second active layer (Al 2 O 3) passivation layer to The results of measurement of electrical characteristics of the formed samples are shown. Also, forward refers to forward bias and reverse refers to reverse bias.

Referring to FIGS. 8 to 11, it can be confirmed that the surface property of the transition metal decalcane thin film transistor fabricated according to one aspect of the present invention is changed from hydrophobic to hydrophilic by surface treatment under proper conditions.

Further, if pretreatment is carried out under appropriate conditions (oxygen plasma intensity: 150 W, processing time: 30 to 60 seconds) before formation of the passivation layer through atomic layer deposition, as shown in FIGS. 8 and 9, And the reverse bias, the turn-on voltage and the on / off current ratio are kept constant, and the mobility (u) of the carrier increases.

 However, as shown in FIGS. 10 and 11, when the oxygen plasma treatment time is set to 90 to 120 seconds and excessive pretreatment is performed over a proper condition, it is confirmed that the electrical characteristics are deteriorated.

The oxygen plasma power during the surface treatment of the oxygen (O 2 ) plasma with respect to the surface of the transition metal dicalcogenide active layer 120 may be 50 W to 180 W. Preferably from 120 W to 160 W, and more preferably from 130 W to 150 W.

FIGS. 12 to 14 are graphs showing electrical characteristics of a transition metal decalcogenide thin film transistor according to the power of an oxygen plasma for surface-treating the transition metal dicalcogenide active layer 120 according to one aspect of the present invention.

Specifically, FIGS. 12 to 14 show the results obtained by surface-treating the MoS 2 active layer by varying the power of the oxygen plasma to 100 W (see FIG. 12), 125 W (see FIG. 13) and 150 W (I ds ) according to the gate-source electrode voltage (V gs ) of the transition metal dicalcone thin film transistor. Here, the oxygen plasma surface treatment time is 60 seconds.

12 to 14 in pristine is the initial state of MoS 2 active not a plasma surface treatment, passivation after the MoS 2 active oxygen plasma surface treatment, MoS 2 of aluminum oxide on the active layer (Al 2 O 3) passivation layer to And the measurement result of electrical characteristics of the formed sample is shown. Forward refers to a forward bias and reverse refers to a reverse bias.

12 to 14, when the oxygen plasma power is 150 W (see FIG. 14), the hysteresis phenomenon is most effectively reduced, and the transition metal hafnium thin film transistor produced according to one aspect of the present invention exhibits 125 W And 100 W, the hysteresis phenomenon is relatively lessened as the oxygen plasma power is lowered. That is, as the oxygen plasma power is decreased, the reduction efficiency of the hysteresis phenomenon decreases.

3 and the step S130 of Fig. 7 when, the oxygen (O 2) plasma or a functionalized transition metal radical chalcogenides active layer 120, a source electrode (130a) and a drain electrode (130b) on the by plasma oxygen compound And are formed to be spaced apart from each other.

The source electrode 130a and the drain electrode 130b may be formed of a metal such as Al, Cr, Au, Ti, or Ag and a transparent material such as indium tin oxide (ITO), indium zinc oxide (IZO), or indium tin zinc oxide Oxide, and may be formed as a single layer or multiple layers, or a double layer in which the metal and the transparent oxide are respectively deposited.

The source electrode 130a and the drain electrode 130b are formed by forming an ITO layer having a thickness of 100 nm to 200 nm on the entire surface of the transition metal dicarconeide active layer 120 by RF (Radio Frequency) magnetron sputtering, And may be formed by patterning the ITO layer.

Referring to step S140 of FIGS. 4 and 7, a passivation layer 140 for protecting the transition metal decalcogenide active layer 120 is formed on the transition metal dicarcogenide active layer 120 by atomic layer deposition (ALD) .

The passivation layer 140 according to an exemplary embodiment of the present invention is formed by ALD, plasma enhanced chemical vapor deposition (PECVD), or sputtering.

Atomic Layer Deposition (ALD) is generally performed by chemically adsorbing a precursor (molecule) onto the surface of a substrate using a chemical bond with the substrate surface, then substituting the next precursor through the surface chemistry for the adsorbed precursor, (cyclic repetition) by alternately performing adsorption and substitution by reaction such as protonation, so that layer-by-layer deposition is possible and the oxide can be deposited as thin as possible.

The atomic layer deposition method can be divided into thermal ALD and plasma enhanced ALD (PEALD).

The thermal atomic layer deposition method is a method in which thermal energy is involved in the reaction of a precursor and an oxidizing agent, and the plasma atomic layer deposition method is a method of generating a reaction by decomposing a reaction gas into a plasma by applying power to a reaction chamber, Can be divided into a remote plasma ALD and a direct plasma ALD according to a plasma generating apparatus.

In the atomic layer deposition, water vapor (H 2 O), oxygen (O 2 ), oxygen plasma (O 2 plasma), ozone (O 3 ), alcohol or the like can be used as the oxygen precursor.

The passivation layer 140 is not limited to atomic layer deposition methods such as thermal ALD or plasma enhanced ALD (PEALD), and may be formed by various atomic layer deposition methods.

The passivation layer 140 may be formed to a thickness of, for example, 5 nm to 100 nm using atomic layer deposition. When the thickness of the passivation layer 140 exceeds 100 nm, the shift of the threshold voltage Vth of the transition metal decalcane thin film transistor can be increased and the patterning with the transition metal dicalcogenide active layer 120 If the thickness of the passivation layer 140 is less than 5 nm, it may be insufficient to protect the transition metal dicarcogenide active layer 120.

The passivation layer 140 may more preferably be formed to a thickness of 5 nm to 20 nm.

A passivation layer 140 according to one aspect of the present invention may be formed by plasma atomic layer deposition (PEALD). When the passivation layer 140 is formed by the plasma atomic layer deposition method, the process temperature can be relatively lowered by the application of the plasma, so that the passivation layer 140 can be manufactured by a low-temperature process and the reactivity between the precursor and the reaction gas is high, It can be formed thin, and can be formed with a large area and a uniform thickness.

In addition, the passivation layer 140 according to one aspect of the present invention may be formed through atomic layer deposition using ozone (O 3 ) as an oxygen precursor.

The passivation layer 140 is formed on the transition metal dicalcogenide active layer 120 to protect the transition metal dicalcogenide active layer 120. Specifically, the passivation layer 140 is formed on the transition metal dicarcogenide active layer 120 to prevent external influences such as moisture and hydrogen acting on the surface of the transition metal dicarconeide active layer 120, It is possible to prevent the intrinsic electrical characteristics of the transition metal dicalcogenide active layer 120 from deteriorating. Thereby reducing the hysteresis in which the transition metal dicalcone thin film transistor is deformed.

The passivation layer 140 is entirely formed to cover the entire substrate 110 on which the transition metal dicarconeide active layer 120, the source electrode 130a and the drain electrode 130b are formed. The passivation layer 140 is formed on the active layer 120, The gate electrode 130a and the drain electrode 130b and the gate electrode 150 to be formed later can be insulated from each other. Thereby, it is not necessary to further form a gate insulating layer, the size of the semiconductor element can be reduced, and the processing time can be shortened.

The passivation layer 140 is aluminum oxide (Al 2 O 3), hafnium oxide (HfO 2), silicon oxide (SiO 2), magnesium (MgO), yttrium oxide (Y 2 O 3), titanium oxide (TiO 2) , Nitrogen oxide (SiN x ), and an organic film. Further, the passivation layer 140 may also be formed as a composite laminate of an inorganic film and an organic film.

The passivation layer 140 may preferably be formed of aluminum oxide.

The passivation layer 140 according to one aspect of the present invention can be formed of a transparent oxide such as aluminum oxide, thereby improving the light stability of the transition metal decalcane thin film transistor.

Referring to step S150 of FIGS. 5 and 7, a gate electrode 150 is formed on the passivation layer 140. FIG.

The gate electrode 150 may be formed of at least one of a metal such as Al, Cr, Au, Ti, or Ag and a transparent oxide such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), or ITZO (Indium Tin Zinc Oxide) And may be formed as a single layer or multiple layers, or a double layer in which the metal and the transparent oxide are respectively deposited.

For example, the gate electrode 150 may be formed by forming an ITO layer having a thickness of 100 nm to 200 nm on the entire surface of the passivation layer 140 using an RF magnetron sputtering method, and then patterning the ITO layer.

Referring to FIG. 6, a contact hole h for contacting the source electrode 130a and the drain electrode 130b is formed in the passivation layer 140. Referring to FIG.

The transition metal dicalconeide thin film transistor fabricated according to an embodiment of the present invention includes a substrate 110, a transition metal dicalcogenide layer formed on the substrate 110 and surface-treated with oxygen (O 2 ) A source electrode 130a and a drain electrode 130b formed on the transition metal dicarconeide active layer 120 and spaced apart from each other on the transition metal dicarconeide active layer 120, a transition metal dicarconeide active layer 120 And a gate electrode 150 formed on the passivation layer 140 and the passivation layer 140 formed by atomic layer deposition (ALD) to protect the passivation layer 140.

Although the transition metal decalcone thin film transistor having the top gate structure has been described above with reference to the embodiment of the present invention, the transition metal decalcone thin film transistor according to another embodiment of the present invention has the bottom gate structure Of course.

A transition metal dicalcone thin film transistor according to an embodiment of the present invention includes a transition metal dicalcogenide active layer surface-treated with oxygen (O 2 ) plasma. The surface of the transition metal dicarcogenide active layer surface-treated with oxygen (O 2 ) plasma exhibits hydrophilicity, so that the passivation layer formed on the transition metal dicarcone active layer can be more uniformly formed.

In addition, the change widths of the turn on current region and the turn off current region are constant and the on / off current characteristics due to the transition metal decalcogenide are maintained, Mobility can be improved.

A transition metal decalcone thin film transistor according to an embodiment of the present invention is characterized in that it includes a passivation layer formed by atomic layer deposition on a transition metal decalcogenide active layer. The passivation layer prevents the transition metal decalcogenide active layer from being affected by external factors such as moisture and hydrogen, thereby preventing the inherent electrical characteristics of the transition metal decalcogenide active layer from deteriorating.

In addition, the passivation layer can simultaneously perform the role of the gate insulating layer, thereby eliminating the need of further forming a gate insulating layer, reducing the size of the semiconductor device, and shortening the processing time.

In addition, the passivation layer can be formed by atomic layer deposition on the transition metal dicarcogenide active layer, and can be formed with a large area and uniform thickness, and can be manufactured by a low temperature process, especially when formed by plasma atomic layer deposition have.

Further, the passivation layer can be formed of a transparent oxide such as aluminum oxide, so that the light stability of the transition metal decalcogenide thin film transistor can be improved.

Further, in the transition metal decalcane thin film transistor including the passivation layer according to an embodiment of the present invention, the hysteresis in which the transition metal decalcone thin film transistor is deformed can be reduced.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, This is possible.

Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined by the equivalents of the claims, as well as the claims.

110: substrate 120: transition metal dicalcogenide active layer
130a: source electrode 130b: drain electrode
140: passivation layer 150: gate electrode

Claims (8)

Board;
A transition metal dicarcogenide active layer formed on the substrate in a plurality of layers;
A source electrode and a drain electrode spaced apart from each other on the active layer;
A passivation layer formed on the active layer to protect the active layer; And
A gate electrode formed on the passivation layer,
/ RTI >
The active layer is surface-treated with an oxygen (O 2 ) plasma or an oxygen compound plasma applied for 30 seconds to 60 seconds at an intensity of 130 W to 150 W, the surface of the active layer exhibits hydrophilicity,
Wherein the passivation layer is formed by atomic layer deposition (ALD), plasma enhanced chemical vapor deposition (PECVD), or sputtering to cover the entire substrate on which the active layer, the source electrode, and the drain electrode are formed. Metal dicalcone thin film transistor.
The method according to claim 1,
The active layer may be at least one of molybdenum disulfide (MoS 2 ), molybdenum selenide (MoSe 2 ), molybdenum disulfide (MoTe 2 ), tungsten disulfide (WS 2 ), tungsten selenide (WSe 2 ) and tungsten 2 ). ≪ RTI ID = 0.0 > 11. < / RTI >
The method according to claim 1,
The passivation layer is aluminum oxide (Al 2 O 3), hafnium (HfO 2), silicon oxide (SiO 2), magnesium oxide (MgO), yttrium oxide (Y 2 O 3), titanium oxide (TiO 2) oxide, Nitrogen (SiN x ), and an organic film. The transition metal dicalcone thin film transistor according to claim 1,
Forming a transition metal dicarcogenide active layer on the substrate in a plurality of layers;
The surface of the active layer is hydrophilic by surface-treating the active layer using an oxygen (O 2 ) plasma or an oxygen compound plasma applied for 30 seconds to 60 seconds at an intensity of 130 W to 150 W;
Forming a source electrode and a drain electrode on the active layer so as to be spaced apart from each other;
Forming a passivation layer on the active layer to protect the entire substrate on which the active layer, the source electrode, and the drain electrode are formed using atomic layer deposition (ALD), plasma enhanced chemical vapor deposition (PECVD), or sputtering; And
Forming a gate electrode on the passivation layer
Wherein the thin film transistor is a thin film transistor.
delete delete 5. The method of claim 4,
The active layer may be at least one of molybdenum disulfide (MoS 2 ), molybdenum selenide (MoSe 2 ), molybdenum disulfide (MoTe 2 ), tungsten disulfide (WS 2 ), tungsten selenide (WSe 2 ) and tungsten 2 ). ≪ Desc / Clms Page number 20 > 5. A method of fabricating a transition metal disalcone thin film transistor, comprising:
5. The method of claim 4,
The passivation layer is aluminum oxide (Al 2 O 3), hafnium (HfO 2), silicon oxide (SiO 2), magnesium oxide (MgO), yttrium oxide (Y 2 O 3), titanium oxide (TiO 2) oxide, Nitrogen (SiN x ), and an organic film. The method of manufacturing a transition metal dicalcone thin film transistor according to claim 1,

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