KR20170077607A - Apparatus and method for treating substrate - Google Patents
Apparatus and method for treating substrate Download PDFInfo
- Publication number
- KR20170077607A KR20170077607A KR1020150187655A KR20150187655A KR20170077607A KR 20170077607 A KR20170077607 A KR 20170077607A KR 1020150187655 A KR1020150187655 A KR 1020150187655A KR 20150187655 A KR20150187655 A KR 20150187655A KR 20170077607 A KR20170077607 A KR 20170077607A
- Authority
- KR
- South Korea
- Prior art keywords
- gas
- nozzle
- substrate
- suction pipe
- liquid supply
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention relates to a substrate processing apparatus. A substrate processing apparatus according to an embodiment of the present invention includes a housing for providing a processing space in which a substrate processing process is performed, a support unit in which the substrate is placed in the housing, And a sucking member having a gas injection member having a gas injection nozzle for injecting gas onto the substrate, and a suction pipe for sucking a gas above the substrate, the nozzle unit comprising: .
Description
The present invention relates to an apparatus and a method for processing a substrate.
Contaminants such as particles, organic contaminants, and metallic contaminants on the surface of the substrate greatly affect the characteristics of semiconductor devices and the yield of production. Therefore, a cleaning process for removing various contaminants adhering to the surface of the substrate is very important in the semiconductor manufacturing process, and a process for cleaning the substrate is performed before and after each unit process for manufacturing a semiconductor. In general, cleaning of a substrate is performed by a chemical treatment process for removing metal foreign substances, organic substances, or particles remaining on the substrate by using a chemical, a rinsing process for removing chemicals remaining on the substrate by using pure water, , A supercritical fluid, a nitrogen gas, or the like.
1 is a schematic view of a
An object of the present invention is to provide an apparatus and a method for increasing the drying efficiency of a substrate.
The present invention also provides an apparatus and a method for increasing the drying speed of a residual liquid remaining between patterns.
In addition, the present invention is intended to provide a device-ming method capable of preventing a lining phenomenon.
The problems to be solved by the present invention are not limited to the above-mentioned problems, and the problems not mentioned can be clearly understood by those skilled in the art from the description and the accompanying drawings will be.
The present invention provides a substrate processing apparatus. A substrate processing apparatus according to an embodiment of the present invention includes a housing for providing a processing space in which a substrate processing process is performed, a support unit in which the substrate is placed in the housing, A nozzle unit including a sucking member having a liquid supply member having a liquid supply nozzle for supplying a gas, a gas injection member having a gas injection nozzle for injecting gas onto the substrate, and a suction pipe for sucking gas above the substrate; .
Wherein the gas injection nozzle comprises: a first gas nozzle for injecting a first gas; And a second gas nozzle for injecting a second gas, wherein the second gas is injected at a temperature higher than the first gas.
Wherein the liquid supply nozzle, the first gas nozzle, the second gas nozzle, and the suction pipe are fixed to one nozzle support, and when the treatment liquid is supplied to the substrate placed on the support unit, Wherein the second gas nozzle is provided between the suction pipe and the first gas nozzle and the liquid supply nozzle is provided at an edge portion of the substrate with respect to the first gas nozzle, And is opposed to an adjacent position.
Wherein the liquid supply nozzle, the first gas nozzle, the second gas nozzle, and the suction pipe are fixed to a single nozzle support, and when the processing liquid is supplied to the substrate placed on the support unit, Wherein the first gas nozzle and the second gas nozzle are opposed to each other at a position closer to the center of the substrate than the first gas nozzle and the suction pipe is provided between the second gas nozzle and the first gas nozzle, And is opposed to a position adjacent to the edge portion.
Wherein the liquid supply nozzle, the gas injection nozzle and the suction pipe are fixed to one nozzle support, and when the processing liquid is supplied to the substrate placed on the support unit, the suction pipe is positioned closer to the center of the substrate than the liquid supply nozzle And the gas injection nozzle is provided between the suction pipe and the liquid supply nozzle.
The gas injection member includes a heating portion for heating the gas.
The treatment liquid is a drying liquid for drying the substrate, and the treatment liquid includes an organic solvent.
The gas may be nitrogen (N 2 ) gas.
Wherein the liquid supply nozzle discharges the treatment liquid while the liquid supply nozzle, the gas discharge nozzle and the suction pipe move in the radial direction of the substrate from a central region of the substrate placed on the support unit, Further comprises a controller for injecting gas and controlling said suction tube to perform suction.
The present invention provides a substrate processing method. A substrate processing method according to an embodiment of the present invention includes a liquid supply nozzle for supplying a process liquid to a substrate placed on a support unit, a gas injection nozzle for injecting gas onto the substrate, and a suction pipe for sucking the gas above the substrate Processing the substrate with a nozzle unit, wherein the liquid supply nozzle feeds the process liquid, and the gas injection nozzle injects gas, and the suction pipe sucks the gas on the top of the substrate.
The gas is heated and then injected.
The gas injection nozzle includes a first gas nozzle for injecting a first gas and a second gas nozzle for injecting a second gas, wherein the second gas is injected at a temperature higher than the first gas.
The suction of the gas is performed while rotating the substrate about the center thereof, while moving the liquid supply nozzle, the gas injection nozzle and the suction pipe in the radial direction of the substrate from the central area of the substrate.
The treatment liquid is a drying liquid for drying the substrate, and the gas may be nitrogen (N 2 ) gas.
The apparatus and method according to one embodiment of the present invention can increase the drying efficiency of the substrate.
Further, the apparatus and method according to an embodiment of the present invention can increase the drying speed of the residual liquid remaining between the patterns.
Further, the apparatus and method according to an embodiment of the present invention can prevent a lining phenomenon.
1 is a schematic view of a nozzle unit of a general substrate processing apparatus.
2 is a view showing a part of a substrate dried by a general substrate processing apparatus.
3 is a plan view schematically illustrating a substrate processing apparatus according to an embodiment of the present invention.
4 is a cross-sectional view showing an embodiment of a substrate processing apparatus provided in the process chamber of FIG.
Fig. 5 is a view showing a part of the nozzle unit of Fig. 4;
6 to 8 are views showing a part of a nozzle unit according to another embodiment of FIG.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.
In the embodiment of the present invention, a substrate processing apparatus for performing a process of cleaning a substrate will be described. However, the present invention is not limited thereto, but can be applied to various kinds of apparatuses for drying a substrate.
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
3 is a plan view schematically showing the
Referring to FIG. 1, the
The carrier 130 in which the substrate W is accommodated is mounted on the
The
The
The
The
In the
In the following, an example of the
The
The support unit is provided in the housing. The substrate W is placed on the supporting unit. The support unit may be provided with a
The
Fig. 5 is a view showing a part of the
The
The
The
The
The
The
Fig. 6 is a view showing a part of the
Referring again to Figs. 4 and 5, the
The
7 and 8 are views showing a part of a nozzle unit according to another embodiment of FIG. Referring to Fig. 7, unlike the case of Figs. 5 and 6, the
8 to 8, no
As described above, the present invention includes, in addition to the configuration of the conventional substrate processing apparatus, the configuration for jetting the heated gas to the substrate W and / or the configuration for sucking the gas staying on the substrate W, . Therefore, the drying speed of the residual liquid remaining between the patterns on the substrate can be increased, and thus the lining phenomenon can be prevented.
1: substrate processing equipment W: substrate
10: Index module 20: Process processing module
260: process chamber 300: substrate processing apparatus
320: housing 340: spin head
380: nozzle unit 382: nozzle support
383: liquid supply member 384: gas injection member
385: Suction member 400: Controller
Claims (16)
A housing for providing a processing space in which a substrate processing process is performed;
A support unit in which the substrate is placed in the housing;
A suction member having a gas injection member having a gas injection nozzle for injecting gas onto the substrate, and a suction pipe for sucking gas above the substrate, And a nozzle unit including a suction member.
Wherein the gas injection nozzle comprises:
A first gas nozzle for injecting a first gas; And
And a second gas nozzle for injecting a second gas,
Wherein the second gas is injected at a higher temperature than the first gas.
Wherein the liquid supply nozzle, the first gas nozzle, the second gas nozzle, and the suction pipe are fixed to one nozzle support,
When supplying the treatment liquid to the substrate placed on the support unit,
Wherein the suction pipe is opposed to the first gas nozzle at a position adjacent to the center of the substrate,
The second gas nozzle being provided between the suction pipe and the first gas nozzle,
Wherein the liquid supply nozzle is opposed to a position adjacent to an edge portion of the substrate than the first gas nozzle.
Wherein the liquid supply nozzle, the first gas nozzle, the second gas nozzle, and the suction pipe are fixed to one nozzle support,
When supplying the treatment liquid to the substrate placed on the support unit,
The second gas nozzle being opposed to the first gas nozzle at a position adjacent to the center of the substrate,
Wherein the suction pipe is provided between the second gas nozzle and the first gas nozzle,
Wherein the liquid supply nozzle is opposed to a position adjacent to an edge portion of the substrate than the first gas nozzle.
Wherein the liquid supply nozzle, the gas injection nozzle, and the suction pipe are fixed to one nozzle support,
When supplying the treatment liquid to the substrate placed on the support unit,
Wherein the suction pipe is opposed to the liquid supply nozzle at a position adjacent to the center of the substrate,
Wherein the gas injection nozzle is provided between the suction pipe and the liquid supply nozzle.
Wherein the gas injection member includes a heating portion for heating the gas.
Wherein the processing liquid is a drying liquid for drying the substrate.
Wherein the treatment liquid comprises an organic solvent.
The gas is nitrogen (N 2) gas in the substrate processing apparatus.
Wherein the liquid supply nozzle discharges the treatment liquid while the liquid supply nozzle, the gas discharge nozzle and the suction pipe move in the radial direction of the substrate from a central region of the substrate placed on the support unit, Further comprising a controller for injecting a gas and controlling said suction pipe to perform suction.
Wherein the liquid supply nozzle supplies a treatment liquid to the substrate, and the gas injection nozzle injects gas, and the suction pipe sucks the gas on the upper portion of the substrate.
Wherein the gas is heated and then injected.
Wherein the gas injection nozzle comprises a first gas nozzle for injecting a first gas and a second gas nozzle for injecting a second gas,
Wherein the second gas is injected at a temperature higher than the first gas.
Wherein the suction of the gas is performed while rotating the substrate about its center and the liquid supply nozzle, the gas injection nozzle, and the suction pipe are moved in the radial direction of the substrate from the central area of the substrate.
Wherein the processing solution is a drying solution for drying the substrate.
The gas in the substrate processing method of a nitrogen (N 2) gas.
Priority Applications (1)
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KR1020150187655A KR101842125B1 (en) | 2015-12-28 | 2015-12-28 | Apparatus and method for treating substrate |
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KR1020150187655A KR101842125B1 (en) | 2015-12-28 | 2015-12-28 | Apparatus and method for treating substrate |
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KR20170077607A true KR20170077607A (en) | 2017-07-06 |
KR101842125B1 KR101842125B1 (en) | 2018-05-14 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200048986A (en) * | 2018-10-31 | 2020-05-08 | 주식회사 뉴파워 프라즈마 | Spray apparatus and method |
KR20200096199A (en) * | 2020-08-04 | 2020-08-11 | 주식회사 뉴파워 프라즈마 | Spray apparatus and method |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3899319B2 (en) * | 2003-01-14 | 2007-03-28 | 東京エレクトロン株式会社 | Liquid processing apparatus and liquid processing method |
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- 2015-12-28 KR KR1020150187655A patent/KR101842125B1/en active IP Right Grant
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200048986A (en) * | 2018-10-31 | 2020-05-08 | 주식회사 뉴파워 프라즈마 | Spray apparatus and method |
KR20200096199A (en) * | 2020-08-04 | 2020-08-11 | 주식회사 뉴파워 프라즈마 | Spray apparatus and method |
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KR101842125B1 (en) | 2018-05-14 |
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