KR20170068779A - Plasma process apparatus - Google Patents
Plasma process apparatus Download PDFInfo
- Publication number
- KR20170068779A KR20170068779A KR1020150175675A KR20150175675A KR20170068779A KR 20170068779 A KR20170068779 A KR 20170068779A KR 1020150175675 A KR1020150175675 A KR 1020150175675A KR 20150175675 A KR20150175675 A KR 20150175675A KR 20170068779 A KR20170068779 A KR 20170068779A
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- South Korea
- Prior art keywords
- capacitive coupling
- chamber
- plasma
- electrode body
- roll
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
Abstract
The present invention relates to a plasma processing apparatus, and more particularly, to a plasma processing apparatus, and more particularly, to a plasma processing apparatus having a plurality of capacitive coupling electrodes for discharging a capacitively coupled plasma linearly arranged in two rows in a horizontal direction on an upper portion of a chamber, the present invention relates to a plasma processing apparatus capable of expanding more than a scale and capable of high-density thin film deposition with excellent process stability.
Description
The present invention relates to a plasma processing apparatus, and more particularly, to a plasma processing apparatus, and more particularly, to a plasma processing apparatus, a plasma processing apparatus, and a plasma processing apparatus. More particularly, by arranging a plurality of capacitively coupled electrodes for discharging capacitively coupled plasma linearly in two rows in the horizontal direction, the present invention relates to a plasma processing apparatus capable of expanding more than a scale and capable of high-density thin film deposition with excellent process stability.
A plasma is a highly ionized gas containing the same number of positive ions and electrons. Plasma discharges are used in gas excitation to generate active gases including ions, free radicals, atoms, and molecules. The active gas is widely used in various fields and is typically used in a variety of semiconductor manufacturing processes such as etching, deposition, cleaning, and ashing.
Plasma sources for generating plasma are various, and examples thereof include capacitive coupled plasma and inductive coupled plasma using a radio frequency.
Inductively coupled plasma sources can easily increase the ion density with increasing radio frequency power supply, and thus ion impact is relatively low, which is known to be suitable for obtaining high density plasma. Thus, inductively coupled plasma sources are commonly used to obtain high density plasma. Inductively coupled plasma sources are typically developed using a RF antenna or a transformer coupled plasma (also referred to as a transformer coupled plasma). Techniques are being developed to improve the characteristics of plasma by adding electromagnets or permanent magnets thereto or adding capacitive coupling electrodes, and to improve reproducibility and controllability.
Capacitively coupled plasma sources have the advantage that they have higher capacity for process control than other plasma sources because of their accurate capacitive coupling and ion control capability. On the other hand, because the energy of the radio frequency power source is almost exclusively coupled to the plasma through capacitive coupling, the plasma ion density can only be increased or decreased by increasing or decreasing the capacitively coupled radio frequency power.
However, an increase in radio frequency power increases the ion impact energy. As a result, in order to prevent damage due to the ion bombardment, the radio frequency power supplied is limited. Also, since the radio frequency power supplied to the electrode is not uniform, uniform plasma generation becomes difficult.
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and it is an object of the present invention to provide a plasma processing apparatus and a plasma processing method thereof, in which a plurality of capacitively coupled electrodes for discharging a capacitively coupled plasma are linearly arranged in two rows in a horizontal direction, The present invention provides a plasma processing apparatus capable of expanding more than a 5G scale without occurrence of the plasma processing apparatus, and having excellent process stability and layer uniformity.
Another object of the present invention is to provide a plasma processing apparatus capable of significantly increasing the number of gas injection holes formed on the bottom surface of the electrode body in the form of a square plate, thereby improving uniformity of gas distribution
It is a further object of the present invention to provide a plasma processing apparatus capable of increasing the power density while preventing the generation of plasma by removing the plasma from the outside of the source space by providing a sealed portion of the vacuum portion along the periphery of the upper side of the electrode body in the shape of the square plate, .
It is still another object of the present invention to provide a plasma processing apparatus capable of maximizing the surface area of the square shower head and the edge portion thereof contacting the rear surface within a range not blocking the gas injection hole to maximize the thermal conductivity of the electrode.
According to an aspect of the present invention, there is provided a plasma processing apparatus comprising: a capacitive coupling electrode assembly having a plurality of capacitive coupling electrodes arranged in a linear direction in one direction to discharge capacitively coupled plasma; A power splitter for receiving power from a power source and distributing power to each of the plurality of capacitive coupling electrodes; A substrate transfer section having a support roller for transferring in an in-line mode or a roll-to-roll mode into the plasma region; And a chamber for processing the substrate in the internal discharge space, the chamber being provided with the capacitive coupling electrode and the substrate transfer unit.
Here, the plurality of capacitive coupling electrodes of the capacitive coupling electrode assembly may be linearly arranged in two rows in one direction on the upper portion of the chamber.
In addition, the capacitive coupling electrode may be a showerhead-shaped electrode body having a rectangular plate shape; A pipe shaped gas supply path formed in the electrode body and connected to the power splitter injecting a process gas and supplying electric power to the electrode body; And a plurality of gas injection holes provided on a lower surface of the electrode body for injecting a process gas into the chamber.
In addition, a water-cooled cooling block is preferably provided on the gas supply path to control the internal overheating.
Further, it is preferable that a vacuum portion is further provided on the electrode body of the rectangular plate.
Further, it is preferable that the gas supply path is formed of a conductive material.
According to the plasma processing apparatus of the present invention described above, a plurality of capacitive coupling electrodes for discharging capacitively coupled plasma are linearly arranged in two rows in the horizontal direction on the upper part of the chamber, scale and high-density thin film deposition as well as low-temperature, high-speed and high-density thin film deposition.
By removing the ferrite on the upper side of the conventional electrode body and forming the vacuum, it is possible to increase the power density while preventing generation of plasma outside the source space without causing deterioration by the magnet.
Also, since the electrode body is formed in a square plate shape, the number of the gas injection holes formed on the lower surface of the electrode body can be greatly increased, and the uniformity of the gas distribution can be improved.
In addition, there is also an effect that the thermal conductivity of the electrode can be maximized by maximally extending the edge portion of the square shower head and the rear surface thereof in a range not blocking the gas injection hole.
In addition, a water-cooled cooling block is further provided at an upper portion of each of the capacitive coupling electrodes to control the internal overheating.
Also, there is an advantage that the capacitive coupling electrode assembly having a plurality of capacitive coupling electrodes linearly arranged in two rows in the transverse direction on the upper part of the chamber can be applied to both the in-line scheme and the roll-to-roll scheme.
1 is a schematic view of a plasma processing apparatus according to an embodiment of the present invention.
FIGS. 2A and 2B are schematic perspective views of chambers showing a state in which the capacitive coupling electrodes of FIG. 1 are arranged in two rows in a transverse direction. FIG.
3 is a view showing a shape of a capacitive coupling electrode of a plasma processing apparatus according to an embodiment of the present invention.
4 is a schematic cross-sectional view of the chamber showing the state in which the capacitive coupling electrodes of Fig. 1 are linearly arranged in the lateral direction.
5 is a view schematically showing a plasma processing apparatus according to another preferred embodiment of the present invention.
The present invention may be embodied in many other forms without departing from its spirit or essential characteristics. Accordingly, the embodiments of the present invention are to be considered in all respects as merely illustrative and not restrictive.
The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms.
The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.
It is to be understood that when an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, .
On the other hand, when an element is referred to as being "directly connected" or "directly connected" to another element, it should be understood that there are no other elements in between.
The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise.
In the present application, the terms "comprises", "having", "having", and the like are intended to specify the presence of stated features, integers, steps, operations, components, Steps, operations, elements, components, or combinations of elements, numbers, steps, operations, components, parts, or combinations thereof.
Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.
Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, in order that the present invention may be easily understood by those skilled in the art. .
FIG. 1 is a view schematically showing a plasma processing apparatus according to an embodiment of the present invention. FIGS. 2A and 2B are a schematic perspective view of a chamber showing a state in which the capacitive coupling electrodes of FIG. 1 are arranged in a two- admit.
As shown, the
The chamber 110 includes a capacitive
Although not shown in the drawing, the chamber 110 is provided with a gas inlet through which a process gas is supplied from the outside of the chamber 110. The chamber 110 is provided with a gas exhaust port connected to the exhaust pump 114 to maintain the inside of the chamber 110 in a vacuum state to perform a plasma process and maintain the inside of the chamber 110 at atmospheric pressure, .
The chamber 110 may be made of a metal material such as aluminum, stainless steel, or copper. Or a coated metal such as anodized aluminum or nickel plated aluminum. Or a refractory metal. Alternatively, the chamber 110 may be wholly or partially fabricated from an electrically insulating material such as quartz, ceramic, or the like. As such, the chamber 110 may be fabricated of any material suitable for the intended plasma process to be performed. The structure of the chamber 110 may have a suitable structure for uniform generation of the plasma, for example, a circular structure or a rectangular structure, and any other type of structure. The
The capacitive
That is, as shown in FIG. 2, the capacitive
The plurality of
The plurality of
Meanwhile, an
The
The substrate transferring part 140 transfers the
Here, the support roller 142 may be provided with a heater as a heating means for applying heat to the
In the illustrated example, one chamber 110 is exemplified, but the chamber may be configured in a plurality of in-line loading chambers, a plurality of chambers, and an unloading chamber.
In this case, the loading chamber receives the
In this case, a substrate transfer robot (not shown) may be further provided as a transfer unit between the loading chamber, the plurality of chambers, and the unloading chambers. The transfer robot may be a conveying unit for supporting the
Meanwhile, the
The
FIG. 3 is a view showing a shape of a capacitive coupling electrode of a plasma processing apparatus according to an embodiment of the present invention, and FIG. 4 is a schematic sectional view of a chamber showing a state in which capacitive coupling electrodes of FIG. 1 are linearly arranged in a lateral direction.
As shown in the drawing, the
A
Further, a water cooling
In addition, a
The
In this case, the
The
5 is a view schematically showing a plasma processing apparatus according to another preferred embodiment of the present invention.
In the present embodiment, there is a difference in that a transfer method of a substrate processed in a plasma maare region is a roll-to-roll method in which a substrate is transferred in a curved shape instead of an in-line method as shown in FIG.
5, the
A plasma discharge space is formed in the roll-to-
The
Referring to FIG. 5, the capacitive
The
The
The
The
In addition, since current does not flow through the supporting
It is to be understood that the invention is not limited to the form set forth in the foregoing description. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims. It is also to be understood that the invention includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.
100, 200: plasma processing apparatus 110: chamber
120: capacitive coupling electrode assembly
121: capacitive coupling electrode 122: electrode body
123: gas supply path 124: gas injection hole
125: gas inlet 126: water-cooled cooling block
127: Jean's study
130: power splitter
140: substrate transfer unit 141: substrate
144: Support roller
150: controller 152:
162: wire
Claims (8)
A power splitter for receiving power from a power source and distributing power to each of the plurality of capacitive coupling electrodes;
A substrate transfer section having a support roller for transferring in an in-line mode or a roll-to-roll mode into the plasma region; And
And a chamber for processing the substrate in the internal discharge space, the chamber being provided with the capacitive coupling electrode and the substrate transfer unit.
Wherein the plurality of capacitive coupling electrodes of the capacitive coupling electrode assembly are linearly arranged in two rows in one direction at an upper portion of the chamber.
The capacitive coupling electrode is in the form of a showerhead,
An electrode body of a rectangular plate shape;
A pipe shaped gas supply path formed in the electrode body and connected to the power splitter injecting a process gas and supplying electric power to the electrode body; And
And a plurality of gas injection holes provided on a bottom surface of the electrode body to inject a process gas into the chamber.
And a water cooling type cooling block is further provided on the gas supply path to control the internal overheating.
And a vacuum portion is provided on an upper portion of the electrode body of the rectangular plate.
Wherein the electrode body of the rectangular plate increases the surface area of the edge portion within a range that does not block the plurality of gas injection holes.
Wherein the gas supply path is formed of a conductive material.
Wherein the currents distributed in the power splitter provide out-of-phase currents to neighboring capacitive coupling electrodes.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020150175675A KR101775361B1 (en) | 2015-12-10 | 2015-12-10 | Plasma process apparatus |
PCT/KR2015/014392 WO2016108568A1 (en) | 2014-12-31 | 2015-12-29 | Plasma processing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020150175675A KR101775361B1 (en) | 2015-12-10 | 2015-12-10 | Plasma process apparatus |
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KR20170068779A true KR20170068779A (en) | 2017-06-20 |
KR101775361B1 KR101775361B1 (en) | 2017-09-06 |
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KR1020150175675A KR101775361B1 (en) | 2014-12-31 | 2015-12-10 | Plasma process apparatus |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11019548B2 (en) | 2017-11-24 | 2021-05-25 | Samsung Electronics Co., Ltd. | Electronic device and communication method thereof |
KR20220021120A (en) * | 2020-08-13 | 2022-02-22 | 주식회사제4기한국 | Roll-to-Roll Plasma Cleaning Apparatus for Roll Annealed Copper FCCL |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5542488B2 (en) * | 2010-03-18 | 2014-07-09 | 富士フイルム株式会社 | Deposition equipment |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11019548B2 (en) | 2017-11-24 | 2021-05-25 | Samsung Electronics Co., Ltd. | Electronic device and communication method thereof |
US11218938B2 (en) | 2017-11-24 | 2022-01-04 | Samsung Electronics Co., Ltd. | Electronic device and communication method thereof |
KR20220021120A (en) * | 2020-08-13 | 2022-02-22 | 주식회사제4기한국 | Roll-to-Roll Plasma Cleaning Apparatus for Roll Annealed Copper FCCL |
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