KR20170047062A - Thinner composition - Google Patents

Abstract

The present invention relates to a thinner composition and, more specifically, to a thinner composition comprising: propylene glycol C1-C10 alkyl ether; methyl methoxypropionate; and methyl 2-hydroxy isobutyrate. Accordingly, the thinner composition improves spreadability of photoresist and bottom anti-reflective coating (BARC), can significantly reduce usage, and has excellent solubility and EBR properties with respect to various photoresists, BARCs and underlayers.

Description

Thinner composition {THINNER COMPOSITION}

The present invention relates to a thinner composition.

A photolithography process during the manufacturing process of a semiconductor device is a process of applying a photosensitive resin composition on a wafer, transferring a previously designed pattern, and then constructing an electronic circuit through an etching process appropriately according to the transferred pattern It is one of the most important tasks.

Such a photolithography process includes (1) a coating process for uniformly applying a photosensitive resin composition to the surface of a wafer, (2) a soft baking process for evaporating a solvent from the applied photoresist to attach the photoresist to the surface of the wafer (3) an exposure step of exposing a photoresist film while transferring a circuit pattern on the mask repeatedly and sequentially while projecting the photoresist film on a photoresist film by using a light source such as ultraviolet light, and (4) (5) a hard baking process for more closely adhering the photoresist film remaining on the wafer to the wafer after the development process, and (5) a step of selectively removing the portions having different physical properties such as solubility, (6) an etching process for etching a certain portion according to a pattern of the developed photoresist, and (7) a process for removing unnecessary portions It goes to a separation step such as removing a film.

In the spin coating process in which the photosensitive film is supplied onto the wafer in the photolithography process and the substrate is rotated to uniformly spread the surface by the centrifugal force, the photosensitive film is molten due to the centrifugal force to form a small spherical material. The spherical material may be peeled off during transfer of the substrate after the baking process, which may cause particles in the device and cause defocusing during exposure. Since the unnecessary photosensitive material causes contamination of the equipment, the yield of the semiconductor device is lowered. Therefore, an injection nozzle is disposed above and below the edge portion and the rear portion of the substrate, and an organic solvent And the thinner composition composed of the components is sprayed to remove the thinner composition.

Factors that determine the performance of the thinner composition include dissolution rate and volatility. The dissolution rate of the thinner composition is very important because it determines how effectively and rapidly the photosensitive resin can be dissolved and removed. Specifically, in the rinsing of the edge portion, a proper processing speed can be obtained with an appropriate dissolution rate, and if the dissolution rate is too high, a photoresist attack may appear in the rinsing of the photoresist applied to the substrate. On the other hand, if the dissolution rate is too low, a partially dissolved photoresist tail flow phenomenon called tailing may appear in the rinse of the photoresist layer applied to the substrate. Especially in recent years, due to the high integration and high density of semiconductor integrated circuits and the increase in density of the substrate, the rpm of the rotation speed is inevitable in the case of the rinsing process using the rotational deformation. In the process of rinsing, when the substrate is shaken due to the low rotation and when the thinning speed of the thinner composition to be sprayed does not have a proper dissolution rate, a bounding phenomenon appears and the use of unnecessary thinner composition is increased. In such a low rotation rinse process due to the large-scale curing of the substrate, a strong dissolution rate of the thinner is required more than the conventional high rinse rinse process.

Further, it is required that the thinner composition does not easily volatilize and remain on the surface of the substrate after removing the photosensitive resin. If the thinner composition is not volatilized and remains volatile, the remaining thinner itself may act as a contamination source in various processes, particularly in a subsequent etching process, thereby lowering the yield of semiconductor devices. On the other hand, if the volatility is too high, the substrate may rapidly cool and the thickness variation of the coated photoresist may become worse, and it may be easily volatilized into the atmosphere during use, which may cause deterioration of cleanliness.

The i-line photoresist, KrF, ArF, EUV, KrF antireflective film, and ArF antireflective film, which are currently used as photoresists in the semiconductor lithography process, are different from each other in their main components. Therefore, it is necessary to control the compositional content of the organic solvent for improving solubility and applicability of all of them.

Korean Patent Publication No. 2011-21189 discloses a thinner composition containing hydrogen-bondable organic solvents, glycols, esters, and the like, which not only can reduce the application amount of the photoresist, There is an advantage that the application can be achieved and the unnecessary photoresist applied to the edge portion or the rear portion of the substrate can be effectively removed. However, since the viscosity of the thinner increases due to the hydrogen bonding and the volatility decreases, the thinner is not volatilized and remains, inducing a tailing phenomenon at the photoresist removal interface, and also acts as an interfering particle in a subsequent process, Can be generated.

Therefore, it has excellent solubility to various photoresist films, lower antireflection films (BARC) and underlayers, has appropriate volatility, and exhibits excellent coating performance in application of photoresist, thereby reducing the amount of photoresist used A thinner composition is required.

Korea Patent Publication No. 2011-21189

The present invention relates to a thinner composition which can be used in a process of pretreating a wafer surface to improve the coating performance of a photoresist and a bottom anti-reflective coating (BARC), thereby significantly reducing the amount of photoresist and lower antireflection coating (BARC) will be.

The present invention relates to a thinner composition having excellent solubility and EBR characteristics for various photoresists and lower antireflection coatings (BARC) and underlayers, and having excellent properties in the rewiring process of wafers using photoresist .

1. Propylene glycol C1-C10 alkyl ether acetates; Methyl methoxy propionate; And

Methyl 2-hydroxyisobutyrate.

2. The composition of claim 1, wherein the propylene glycol C1-C10 alkyl ether acetate is at least one selected from the group consisting of propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate and propylene glycol butyl ether acetate, Composition.

3. The composition of claim 1 comprising 20 to 80% by weight of propylene glycol C1-C10 alkyl ether acetate, 5 to 35% by weight of methylmethoxypropionate and 10 to 75% by weight of methyl 2-hydroxyisobutyrate. Composition.

4. A composition according to claim 1, comprising 35 to 65% by weight of propylene glycol C1-C10 alkyl ether acetate, 5 to 25% by weight of methylmethoxypropionate and 30 to 50% by weight of methyl 2-hydroxyisobutyrate. Composition.

5. A substrate processing method for processing a substrate with a thinner composition according to any one of claims 1 to 4 before applying the photoresist to the substrate.

6. A method for processing a substrate, comprising applying a photoresist to a substrate and treating the substrate with a thinner composition of any one of claims 1 to 4 before the exposure process.

The thinner composition of the present invention can be pre-treated on the surface of a wafer before application of a photoresist and a bottom anti-reflective coating (BARC) to significantly reduce the amount of photoresist and bottom anti-reflective coating (BARC) used (RRC) And the lower antireflection film (BARC) are improved so that uniform application is possible.

The thinner composition of the present invention has excellent solubility and edge beading (EBR) characteristics for various photoresists, lower antireflective coatings (BARC) and underlayers. Accordingly, the present invention can also be used for a rework process of wafers using a photoresist and a bottom antireflection film (BARC).

Fig. 1 is a photograph of a photoresist coated on a wafer and a photoresist applied on a wafer in an amount of 99% or more, after the thinner composition of Example 1 was applied onto the wafer. Fig.
Fig. 2 is a photograph of the thinner composition of Comparative Example 1 applied on a wafer, followed by applying a photoresist, and the photoresist was applied on the wafer in a ratio of less than 85%.
3 is a photograph of the EBR evaluation performed using the thinner composition of Example 1. Fig.
4 is a photograph of EBR evaluation performed using the thinner composition of Comparative Example 1. Fig.
5 is a view showing points where coating uniformity of a photoresist applied on a wafer is evaluated.

The present invention relates to propylene glycol C1-C10 alkyl ether acetates; Methyl methoxy propionate; (BARC) and an underlayer (BARC) can be remarkably reduced and the use amount can be remarkably reduced by using the photoresist, the lower antireflection film (BARC) and the methyl 2-hydroxyisobutyrate. ) ≪ / RTI > and an EBR characteristic.

Hereinafter, the present invention will be described in detail.

The thinner compositions of the present invention include propylene glycol C1-C10 alkyl ether acetates; Methyl methoxy propionate; And methyl 2-hydroxyisobutyrate.

Propylene glycol C1-C10 alkyl ether acetate is a component having excellent solubility in a polymer and excellent in solubility in a photoresist. A commonly used propylene glycol alkyl ether has relatively high volatility, so that when the thinner composition is used in a thinner composition, the substrate may be cooled rapidly, so that the temperature of the same substrate may be different. In this case, uniform application of the photoresist or the bottom anti-reflection film may not be achieved. However, the propylene glycol C1-C10 alkyl ether acetate according to the present invention solves the above problem due to its relatively low volatility.

Propylene glycol C1-C10 alkyl ether acetate is not particularly limited as long as it has an alkyl group having 1 to 10 carbon atoms, and examples thereof include propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, propylene glycol butyl Ether acetate, and the like, preferably propylene glycol methyl ether acetate. These may be used alone or in combination of two or more.

The content of the propylene glycol C1-C10 alkyl ether acetate is not particularly limited and may be, for example, 20 to 80% by weight, preferably 35 to 65% by weight, based on the total weight of the composition. If the content of propylene glycol C1-C10 alkyl ether acetate is less than 20% by weight, the volatility of the composition may be lowered and the thinner composition may remain on the substrate, thereby causing contamination of the substrate, lowering the solubility in the photoresist, And the EBR performance may be degraded. As a result, the rework performance and the coating ability of the photoresist also deteriorate. When the content is more than 80% by weight, the coating property of the photoresist is lowered, the RRC performance is lowered, the photoresist, BARC and the like are not sufficiently diluted, and the EBR performance may be lowered. As a result, the rework performance and the coating ability of the photoresist are similarly lowered.

Methyl methoxypropionate is very excellent in solubility in photoresists and can reduce the unpleasantness of propylene glycol C1-C10 alkyl ether acetates when used with propylene glycol C1-C10 alkyl ether acetates.

The content of methyl methoxypropionate is not particularly limited and may be, for example, 5 to 35% by weight, preferably 5 to 25% by weight based on the total weight of the composition. When the content of methyl methoxypropionate is less than 5% by weight, the solubility improvement effect and the unpleasant odor reduction effect may be insignificant, the volatility of the thinner composition is increased, the substrate is rapidly cooled and the coating property of the photoresist is lowered, BARC, etc. can not be sufficiently diluted and RRC performance may be degraded. As a result, the rework performance and the coating ability of the photoresist also deteriorate. If the content is more than 35% by weight, the volatility of the thinner composition may be lowered, and the thinner composition may remain on the substrate, thereby reducing RRC (reducing resist coating) performance against photoresist, BARC and the like. As a result, the rework performance and the coating ability of the photoresist are similarly lowered.

Methyl 2-hydroxyisobutyrate is a component that improves the solubility of a photoresist in a photosensitive agent.

The content of methyl 2-hydroxyisobutyrate is not particularly limited and may be, for example, 10 to 75% by weight, preferably 30 to 50% by weight, based on the total weight of the composition. When the content of methyl 2-hydroxyisobutyrate is less than 10% by weight, the viscosity of the composition is lowered, and the photoresist and the BARC can not be sufficiently caught, and the RRC performance may be deteriorated and the EBR performance may be deteriorated. As a result, the rework performance and the coating ability of the photoresist also deteriorate. When the content is more than 75% by weight, the volatility and viscosity of the composition are increased, so that it is difficult to smoothly modify (apply) the composition on the substrate, thereby degrading the RRC performance and degrading the EBR performance. As a result, the rework performance and the coating ability of the photoresist are similarly lowered.

As described above, the present invention uses the propylene glycol C1-C10 alkyl ether acetate and methyl methoxypropionate together to improve the performance of RRC and EBR by allowing the composition to have appropriate volatility and good solubility, The problem of unpleasantness can be reduced. Also, by using methyl 2-hydroxyisobutyrate in combination, not only the dissolving power can be further improved, but the viscosity can be adjusted to an appropriate level to remarkably improve RRC performance and EBR performance. Also, the rework performance and the coating ability of the photoresist and the lower antireflection film (BARC) can be remarkably improved.

The thinner composition of the present invention exhibits excellent effects in exhibiting uniform coating performance on a silicon wafer with respect to various photoresist films and lower antireflection films (BARC), and exhibits excellent RRC, EBR characteristics, and rework characteristics Lt; / RTI > Particularly, in the case of i-line, KrF, ArF, and ArF immersion photoresist, the basic structure of the photosensitive resin is different. Therefore, it is necessary to control the compositional content of the organic solvent for improving the coating property and the solubility, The thinner compositions of the present invention can exhibit excellent EBR and RRC performance for a variety of resists.

The present invention also provides a method of treating a substrate using the thinner composition according to the present invention.

The substrate processing method of the present invention includes the step of treating the substrate with the thinner composition and applying the photoresist to the substrate.

By applying the photoresist after treating the substrate with the thinner composition, the substrate can be coated with a small amount of photoresist, thereby improving the process cost and productivity.

Further, the substrate processing step of the present invention may further include the step of applying the photoresist after the treatment of the thinner composition, and treating the substrate again with the thinner composition before the exposure step.

By treating the substrate with the thinner composition again in this step, unnecessary photoresist applied to the edge portion or the rear portion of the substrate can be quickly and effectively removed before the exposure step.

The substrate processing method according to the present invention can be applied without any particular limitation as long as it is a product in which a photoresist is used, for example, an electronic device manufacturing method. For example, it can be applied to a semiconductor device or a manufacturing method of a thin film transistor liquid crystal display device.

It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are intended to be illustrative of the invention and are not intended to limit the scope of the claims. It will be apparent to those skilled in the art that such variations and modifications are within the scope of the appended claims.

Example  And Comparative Example

A thinner composition having the composition and content shown in Table 1 below was prepared.

division Propylene glycol alkyl ether acetate
(A) Alkyl alkoxypropionate
(B) Methyl 2-hydroxyisobutyrate
(C) More Ether & Ester
(D) ingredient Weight portion ingredient Weight portion ingredient Weight portion ingredient Weight portion Example 1 A-1 50 B-1 10 C-1 40 - - Example 2 A-1 45 B-1 25 C-1 40 - - Example 3 A-1 65 B-1 5 C-1 30 - - Example 4 A-1 35 B-1 15 C-1 50 - - Example 5 A-1 50 (B-1) +
(B-2) 10 C-1 40 - - Example 6 A-1 25 B-1 30 C-1 45 - - Comparative Example 1 A-1 100 - - - - - - Comparative Example 2 - - B-1 100 - - - - Comparative Example 3 - - - - C-1 100 - - Comparative Example 4 - - B-1 40 C-1 60 - - Comparative Example 5 A-1 50 - - C-1 50 - - Comparative Example 6 A-1 70 B-1 30 - - - - Comparative Example 7 A-1 50 - - C-1 40 D-1 10 Comparative Example 8 A-1 40 - - C-1 40 D-1 20 Comparative Example 9 A-1 50 - - C-1 40 D-2 10 Comparative Example 10 - - B-1 10 C-1 40 D-1 50 Comparative Example 11 A-1 50 B-2 10 C-1 40 - - A-1: Propylene glycol monomethyl ether acetate
Acetate)
B-1: Methyl 3-methoxy propionate
B-2: Ethyl 3-ethoxy propionate
C-1: Methyl 2-hydroxyisobutyrate
D-1: Propylene glycol monomethyl ether
D-2: Ethyl Lactate

Experimental Example  One. Photoresist  Type and At BARC  Evaluation of RRC (reducing resist coating) performance

The RRC performance for the four photoresists and BARC of Table 2 was tested using the thinner compositions of the Examples and Comparative Examples. Each thinner composition was applied to an 8-inch silicon oxide substrate under the conditions shown in Table 3, and the following five types of photoresist and BARC were applied, and the RRC process was performed to measure the coating distribution and the consumption amount thereof. In the case of BARC, RRC process was performed using each thinner composition without heat treatment.

Table 4 shows the results of RRC performance evaluation after applying 0.5cc of thinner on 8 inch wafer, 1.0 cc of PR1 ~ 4 and 0.4cc of BARC respectively. The evaluation criteria are as follows.

◎: RRC result When 0.5 cc of thinner was applied to an 8-inch wafer and photoresist was applied on the wafer in a ratio of 99 to 100%

○: RRC result When a photoresist was applied 97 to 98% on the wafer upon application of a 0.5 cc thick thinner on an 8-inch wafer

△: RRC results When a photoresist is applied on a wafer by 85 to 90% after application of a 0.5 cc thick thinner on an 8-inch wafer

X: RRC result When a photoresist is applied on an 8-inch wafer with a thinner of 0.5 cc on top of the photoresist, less than 85% of the photoresist is applied on the wafer

division PR type PR 1 PR for ArF PR 2 PR for ArF-immersion PR 3 PR for i-line PR 4 PR for KrF BARC BARC for ArF

step Time (sec) Speed (rpm) The accelerator (rpm / sec) Dispensing (cc) One 2.5 0 10,000 0.5 (Thinner) 2 1.5 900 10,000 0 3 9.5 1500 10,000 0 4 5.0 600 10,000 0.5 to 1 (PR) 5 5.0 1500 10,000 0 6 10.0 1000 10,000 0

division PR1 (1.0 cc) PR2 (1.0 cc) PR3 (1.0 cc) PR4 (1.0 cc) BARC (0.4 cc) Example 1 ◎ ◎ ◎ ◎ ◎ Example 2 ◎ ◎ ◎ ◎ ◎ Example 3 ◎ ◎ ◎ ◎ ◎ Example 4 ◎ ◎ ◎ ◎ ◎ Example 5 ◎ ◎ ○ ◎ ◎ Example 6 ◎ ◎ ○ ○ ◎ Comparative Example 1 X X X X X Comparative Example 2 X X X X X Comparative Example 3 X X X X X Comparative Example 4 X X X X X Comparative Example 5 X X X X X Comparative Example 6 X X X X X Comparative Example 7 X X △ △ △ Comparative Example 8 X X △ △ △ Comparative Example 9 X X △ △ △ Comparative Example 10 △ X X X △ Comparative Example 11 △ △ X △ △

Referring to Table 4, the thinner compositions of the examples according to the present invention exhibit excellent RRC performance for all photoresist films. In addition, the same results were obtained when the rotational speed (rpm) condition of the RRC was changed.

Referring to FIG. 1, it can be confirmed that the photoresist is applied after coating the thinner composition of Example 1 on the wafer, and the photoresist is applied on the wafer at 99% or more.

On the other hand, the thinner composition of the comparative example had little effect of improving the coating performance of the photoresist and BARC.

Referring to FIG. 2, it can be confirmed that the photoresist is applied after the thinner composition of Comparative Example 1 is applied on the wafer, and the photoresist is applied on the wafer with less than 85%.

Experimental Example  2. For the photosensitive resin composition Thinner  An unnecessary photoresist stripping experiment (EBR: Edge Bead Removing Experiment)

After coating the photosensitive resin composition shown in Table 2 on an 8-inch silicon oxide substrate, the thinner compositions of Examples and Comparative Examples were treated under the conditions shown in Table 5 below to remove an unnecessary photosensitive film on the edge portion of the EBR The experiment was carried out.

The thinner compositions of the examples and comparative examples were supplied (1 kgf) in a pressure vessel equipped with a pressure gauge and the flow rate of the thinner composition exiting the EBR nozzle was 10 to 30 cc / min. The removal performance of the unnecessary photoresist was evaluated using an optical microscope, and the results are shown in Table 6 below. The evaluation criteria are as follows.

◎: Excellent EBR line uniformity for photoresist after EBR

○: The EBR line uniformity to the photoresist film after EBR is 75% or more and is in a good linear state

△: The shape of the edge portion after EBR is distorted due to the action of thinner dissolution

X: A tailing phenomenon occurred in the film at the edge portion after the EBR

division Rotational speed (rpm) Time (sec) Dispense condition 300 ~ 2000 7 Spin coating Adjusted according to the thickness of the photosensitive film 15 EBR condition 1 2000 20 EBR condition 2 2000 25 Drying conditions 1300 6

division PR 1 (1.0 cc) PR 2 (1.0 cc) PR 3 (1.0 cc) PR 4 (1.0 cc) BARC (0.4 cc) Example 1 ◎ ◎ ◎ ◎ ◎ Example 2 ◎ ◎ ◎ ◎ ◎ Example 3 ◎ ◎ ◎ ◎ ◎ Example 4 ◎ ◎ ◎ ◎ ◎ Example 5 ◎ ◎ ○ ◎ ◎ Example 6 ◎ ○ ○ ◎ ◎ Comparative Example 1 X X X X X Comparative Example 2 X X X X X Comparative Example 3 X X X X X Comparative Example 4 △ X X X X Comparative Example 5 X X X X X Comparative Example 6 △ △ X X X Comparative Example 7 X X △ △ △ Comparative Example 8 X X △ △ △ Comparative Example 9 X X △ △ △ Comparative Example 10 △ △ X X △ Comparative Example 11 △ X X △ △

Referring to Table 6, the thinner compositions of the examples exhibit excellent EBR performance for all photoresist films. As a result, EBR performance of four types of photoresist and bottom anti-reflective coating (BARC) is satisfied. In addition, the same results were obtained when the rotational speed (rpm) condition of the RRC was changed.

Referring to FIG. 3, when the thinner composition of Example 1 was used, it was confirmed that the EBR line uniformity was excellent.

On the other hand, the thinner compositions of the comparative examples had significantly lower EBR performance.

Referring to FIG. 4, when the thinner composition of Comparative Example 1 is used, it can be confirmed that a tailing phenomenon occurs in a film at an edge portion.

Experimental Example  3. Photoresist  Evaluation of Coating Uniformity by Type (Coating Uniformity)

The coating uniformity of the four photoresists and BARC of Table 2 was tested using the thinner compositions of the Examples and Comparative Examples.

A thinner was applied on an 8-inch silicon oxide substrate according to the conditions shown in Table 7, and a photoresist was applied. Then, 1-inch, 2-inch, 3-inch, and 4-inch distances from the center of the wafer and the center of the wafer were X- (See FIG. 5) were measured to confirm whether the photoresist was evenly applied. The results are shown in Table 8 below.

The evaluation criteria are as follows.

⊚: When the standard deviation of the coating film thickness is 1% or less

?: When the standard deviation of the coating film thickness is 2% or less

?: When the standard deviation of the coating film thickness is 3% or less

X: When the standard deviation of the coating film thickness is more than 3%

step Time (sec) Speed (rpm) The accelerator (rpm / sec) Dispensing (cc) One 5 0 10,000 2.0 (Thinner) 2 5 700 10,000 0 3 3 2,000 10,000 0 4 20 2,000 10,000 0.30 (PR) 5 5 700 10,000 0 6 5 0 10,000 0

division PR 1 (1.0 cc) PR 2 (1.0 cc) PR 3 (1.0 cc) PR 4 (1.0 cc) BARC (0.4 cc) Example 1 ◎ ◎ ◎ ◎ ◎ Example 2 ◎ ◎ ◎ ◎ ◎ Example 3 ◎ ◎ ◎ ◎ ◎ Example 4 ◎ ◎ ◎ ◎ ◎ Example 5 ◎ ◎ ○ ◎ ◎ Example 6 ◎ ◎ ○ ○ ◎ Comparative Example 1 X X X X X Comparative Example 2 X X X X X Comparative Example 3 X X X X X Comparative Example 4 X X X X X Comparative Example 5 X X X X X Comparative Example 6 X X X X X Comparative Example 7 X X △ △ △ Comparative Example 8 X X △ △ △ Comparative Example 9 X X △ △ △ Comparative Example 10 △ X X X △ Comparative Example 11 △ △ X △ △

Referring to Table 8, when the photoresist is applied after the thinner composition of the embodiment is applied, it can be confirmed that the standard deviation of the photoresist film thickness is very small and uniformly applied.

However, when the thinner composition of the comparative example was used, the photoresist was not applied to have a uniform thickness.

Experimental Example  4. Photoresist  Depending on the type Rework  Performance evaluation

Using the thinner compositions of the Examples and Comparative Examples, the rework performance for the four photoresists and BARC of Table 2 was tested. Six photoresists were applied to the 8-inch silicon oxide substrate according to the conditions shown in Table 9, and the wafer after the soft-baking process was subjected to the rework process using each thinner composition. In the case of BARC, the reheating process was carried out using each thinner composition without heat treatment after application.

The surface condition of the reworked silicon oxide substrate was evaluated using a TOPCON surface scan equipment (Model: WM-1500). The results are shown in Table 10 below.

The evaluation criteria are as follows.

◎: Surface scan results show that the number of surface particles on reworked silicon oxide substrate is less than 1000

○: Surface scan results showed that the number of surface particles on the silicon oxide substrate reworked was more than 1000 and less than 2000

△: Surface scan results showed that the number of surface particles on the silicon oxide substrate reworked was more than 2000 and less than 3000

X: Surface scan result shows that the number of surface particles on the silicon oxide substrate reworked is more than 3000

step Time (sec) Speed (rpm) The accelerator (rpm / sec) Dispensing (cc) One 2 0 10,000 0 2 2 1000 10,000 0 3 4 1000 10,000 2.0 (Thinner) 4 9.5 4000 10,000 0 5 0 0 10,000 0

division PR 1 (1.0 cc) PR 2 (1.0 cc) PR 3 (1.0 cc) PR 4 (1.0 cc) BARC (0.4 cc) Example 1 ◎ ◎ ◎ ◎ ◎ Example 2 ◎ ◎ ◎ ◎ ◎ Example 3 ◎ ◎ ◎ ◎ ◎ Example 4 ◎ ◎ ◎ ◎ ◎ Example 5 ◎ ◎ ○ ◎ ◎ Example 6 ◎ ○ ○ ◎ ◎ Comparative Example 1 X X X X X Comparative Example 2 X X X X X Comparative Example 3 X X X X X Comparative Example 4 △ X X X X Comparative Example 5 X X X X X Comparative Example 6 △ △ X X X Comparative Example 7 X X △ △ △ Comparative Example 8 X X △ △ △ Comparative Example 9 X X △ △ △ Comparative Example 10 △ △ X X △ Comparative Example 11 △ X X △ △

Referring to Table 10, it can be confirmed that when the thinner composition of the embodiment is used, the number of surface particles is small and the rework performance is excellent.

However, when the thinner composition of the comparative example is used, it can be confirmed that a large number of surface particles remain.

Claims (6)

Propylene glycol C1-C10 alkyl ether acetates;
Methyl methoxy propionate; And
Methyl 2-hydroxyisobutyrate.
The thinner composition of claim 1, wherein the propylene glycol C1-C10 alkyl ether acetate is at least one selected from the group consisting of propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate and propylene glycol butyl ether acetate.
The thinner composition of claim 1, comprising 20 to 80 weight percent propylene glycol C1-C10 alkyl ether acetate, 5 to 35 weight percent methyl methoxypropionate, and 10 to 75 weight percent methyl 2-hydroxyisobutyrate.
The thinner composition of claim 1, comprising 35 to 65 weight percent propylene glycol C1-C10 alkyl ether acetate, 5 to 25 weight percent methyl methoxypropionate, and 30 to 50 weight percent methyl 2-hydroxyisobutyrate.
A substrate processing method for processing a substrate with the thinner composition of any one of claims 1 to 4 before applying the photoresist to the substrate.
A substrate processing method for processing a substrate with a thinner composition according to any one of claims 1 to 4 after the photoresist coating on the substrate and before the exposure process.

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