KR20170044370A - method of temporary bonding by using temporary bonding film - Google Patents

method of temporary bonding by using temporary bonding film Download PDF

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KR20170044370A
KR20170044370A KR1020150143972A KR20150143972A KR20170044370A KR 20170044370 A KR20170044370 A KR 20170044370A KR 1020150143972 A KR1020150143972 A KR 1020150143972A KR 20150143972 A KR20150143972 A KR 20150143972A KR 20170044370 A KR20170044370 A KR 20170044370A
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South Korea
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temporary bonding
bonding
temporary
film
wafer
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KR1020150143972A
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Korean (ko)
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KR101736335B1 (en
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배준호
허성무
김용섭
강현구
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코스텍시스템(주)
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

An embodiment of the present invention provides a temporarily bonding method using a temporary bonding film, temporarily bonding a device wafer with a carrier wafer by using a temporary bonding film such that a process of temporarily bonding the device wafer with the carrier wafer, which can be necessary during a thinning and post-treatment process, can be simplified and time required for the temporarily bonding process can be reduced, thereby improving productivity. According to an embodiment of the present invention, the temporarily bonding method using a temporary bonding film comprises: a cutting step of cutting a temporary bonding film to have a predetermined size by using a cut part; a transfer step of transferring the temporarily bonded film, which has been cut, and a bonded wafer to an interior of a chamber for temporary bonding through a transfer part, respectively; a first loading step of loading the bonded wafer transferred into the chamber for temporary bonding on a first loading part of the chamber for temporary bonding; a second loading step of loading the temporary bonding film to be bonded to the bonded wafer loaded on the first loading part on a second loading part of the chamber for temporary bonding; an aligning step of aligning the bonded wafer loaded on the first loading part and the temporary bonding film loaded on the second loading part to be at temporarily bonded positions, respectively; and a temporary bonding body forming step of temporarily bonding the temporary bonding film and the bonded wafer, which are aligned at the temporary bonding positions in the aligning step, according to a predetermined order to form a temporary bonding body.

Description

[0001] The present invention relates to a temporary bonding method using a temporary bonding film,

The present invention relates to a temporary bonding method using a temporary bonding film.

As smart devices become thinner and capacities and performance become higher, thinned chips are required in semiconductor wafer production technology through microfabrication of semiconductor cells. For this reason, the backside of the wafer is back-grinded to a thin chip by leaving a thickness of about 30 μm on the wafer having a diameter of 300 mm. However, it is difficult to carry out the post-grinding process safely because the 300 mm wafer is bent to a thickness of 30 μm. Accordingly, a temporary bonding agent is coated on the front surface of the device wafer to bond the dummy wafer, and then the post-processing is performed. The dummy wafer used here serves to support and carry the device wafer and is also referred to as a carrier wafer. After the device wafer is temporarily bonded to the carrier wafer, the semiconductor wafer is subjected to a debonding process for separating the carrier wafer from the device wafer.

Conventionally, a method of applying a temporary bonding agent composition to a device wafer or a carrier wafer when temporarily bonding a carrier wafer to a device wafer, and temporarily cementing and then curing is mainly used. If a temporary adhesive composition is used, it must be evenly applied over a certain thickness in consideration of the bump height on the device wafer. If the temporary bonding agent composition is not evenly applied, a clearance is generated between the device wafer and the carrier wafer, and the post-processing of the device wafer can not be performed. Further, the process of bonding the device wafer and the carrier wafer is complicated, and the bonding process takes a long time.

One embodiment of the present invention is to temporarily bond a device wafer and a carrier wafer using a temporary bonding film, thereby simplifying a temporary bonding process between a device wafer and a carrier wafer that may occur during a thinning and post-processing process, and shortening a time required for a temporary bonding process And to provide a temporary bonding method using a temporary bonding film capable of improving productivity.

The temporary bonding method using a temporary bonding film according to an embodiment of the present invention includes a cutting step of cutting a temporary bonding film to a predetermined size using a cutting portion, a temporarily bonding film and a bonded wafer cut using the transfer portion, A transferring step of transferring the bonded wafer into the chamber, a first loading step of loading the bonded wafer transferred into the temporary bonding chamber into the first loading section of the temporary bonding chamber, a temporary bonding step of bonding the bonded wafer loaded in the first loading section, A second loading step of loading the film into the second loading section of the temporary bonding chamber, a position of the temporary bonding film loaded on the bonded wafer loaded in the first loading section and the temporary loading film loaded on the second loading section using the alignment section, And the temporary bonding film and the bonded wafers aligned in the temporary bonding position in the alignment step are temporarily bonded in accordance with a predetermined order so as to form a temporary bonding body Forming a temporary bonding body forming step.

The temporary bonding film may include a core layer serving as a support for the temporary bonding film, a first bonding layer formed on one surface of the core layer and bonded to one surface of the bonded wafer, and a bonding layer formed on the other surface of the core layer, And a second bonding layer. The bonded wafer may include a device wafer bonded to the first bonding layer of the temporary bonding film and a carrier wafer bonded to the second bonding layer of the temporary bonding film. Here, the device wafer includes a bonding region to which the temporary bonding film is bonded and a non-bonding region of a predetermined size, and a trimming groove having a predetermined size is formed in the non-bonding region at a predetermined width and depth To the first loading portion of the temporary bonding chamber. The first bonding layer and the second bonding layer may have different bonding forces. The first bonding layer and the second bonding layer may have different thicknesses of the bonding layer.

The cutting step may include a step of cutting the temporary adhering film into a circular shape using a cutter, and a step of supporting the cutter and adsorbing the cut temporary adhering film using a porous plate-shaped adsorption plate. And, in the cutting step, the temporary bonding film can be cut smaller than or equal to the size of the bonding area.

The temporary bonding body forming step may include loading the carrier wafer onto the first loading portion, loading the temporary bonding film on the second loading portion, loading the second bonding layer of the temporary bonding film so that the carrier wafer faces the carrier bonding portion, Aligning the position of the second bonding layer and the position of the carrier wafer at the temporary bonding positions, and if the second bonding layer and the carrier wafer are aligned at the temporary bonding positions, the second protective film bonded to the second bonding layer is removed Loading the carrier wafer onto the second loading portion while temporarily bonding the carrier wafer to the second bonding layer, loading the carrier wafer onto the first loading portion, loading the carrier wafer on the second loading portion, loading the carrier wafer on the first loading portion, A step of loading the first bonding layer of the temporary bonding film and the device wafer such that the first bonding layer and the device wafer face each other; Removing the first protective film bonded to the first bonding layer when the first bonding layer and the device wafer are aligned at the temporary bonding positions, And a temporary bonding step. At this time, the temporary bonding body forming step may form a temporary bonding body in a state where the internal pressure of the temporary bonding chamber is vacuum-reduced.

The transferring step can transfer the temporary bonding film adsorbed on the adsorption plate to the inside of the temporary bonding chamber by the hand part of the transfer robot disposed between the cutting part and the temporary bonding chamber.

The aligning step may include a photographing step of photographing the positions of the bonded wafer loaded on the first loading part and the temporary bonding film loaded on the second loading part by using the photographing part provided inside the temporary bonding chamber, A temporary bonding position detecting step of detecting a temporary bonding position by analyzing positions of the temporary bonding film and the bonded wafer photographed from the photographing unit using the temporary bonding position detecting unit provided at one side, And a temporary bonding position aligning step of aligning a temporary bonding position between the temporary bonding film and the bonded wafer by comparing the bonding position with a preset temporary bonding position.

Compared to a composition type bonding agent, it is possible to prevent clearance or peeling between a device wafer and a carrier wafer that may occur during the thinning and post-processing of a device wafer.

Further, the temporary bonding process between the device wafer and the carrier wafer can be simplified, the time required for the temporary bonding process can be shortened, and productivity can be improved.

Further, since the thickness and the bonding force of the bonding layer are made different from each other, the influence transferred to the device wafer upon the removal of the carrier wafer can be reduced and more easily separated, so that the reliability of the thinned device wafer can be improved.

1 is a flowchart of a temporary bonding method using a temporary bonding film according to an embodiment of the present invention.
FIG. 2 is a flowchart showing a step of cutting a temporary bonding film according to an embodiment of the present invention and transferring the temporary bonding film into a temporary bonding chamber.
3 is a view showing a relationship between a trimming groove formed in a device wafer and a temporary temporary bonding film laminated in a temporary bonding body formed according to an embodiment of the present invention.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the invention. The singular forms as used herein include plural forms as long as the phrases do not expressly express the opposite meaning thereto. Means that a particular feature, region, integer, step, operation, element and / or component is specified, and that other specific features, regions, integers, steps, operations, elements, components, and / And the like.

Unless otherwise defined, all terms including technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Commonly used predefined terms are further interpreted as having a meaning consistent with the relevant technical literature and the present disclosure, and are not to be construed as ideal or very formal meanings unless defined otherwise.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

FIG. 1 is a flowchart of a temporary bonding method using a temporary bonding film according to an embodiment of the present invention. FIG. 2 is a cross-sectional view illustrating a process of cutting a temporary bonding film according to an embodiment of the present invention and transferring the temporary bonding film into the temporary bonding chamber 200 Fig. 3 is a view showing the relationship between the trimming grooves 112 formed in the device wafer 110 in the temporary bonding body formed according to the embodiment of the present invention and the temporary bonding film laminated. Referring to FIG. 3, the temporary bonding film 100 according to the embodiment of the present invention includes a core layer 104, a first bonding layer 102, and a second bonding layer 106. The bonded wafer has a device wafer 110 bonded to the first bonding layer 102 of the temporary bonding film 100 and a carrier wafer 120 bonded to the second bonding layer 106 of the temporary bonding film 100 .

1 to 3, a temporary bonding method using a temporary bonding film according to an embodiment of the present invention will be described.

The temporary bonding method using the temporary bonding film according to the embodiment of the present invention includes a cutting step S10, a feeding step S12, a loading step S14, an aligning step S16, and a temporary bonding material forming step S18 The temporary bonding film 100 is used to temporarily bond the device wafer 110 and the carrier wafer 120 to each other. The embodiment of the present invention can shorten the manufacturing time and simplify the temporary bonding process by temporarily bonding the device wafer 110 and the carrier wafer 120 using the temporary bonding film 100. [

First, the cutting step S10 is a step of cutting the temporary bonding film 10 to be fed according to the driving of the feeding roller 20 by using the cutouts 30 and 32 to a predetermined size. In the cutting step S10, the temporary bonding film 10 is cut smaller than the diameter of the device wafer 110. [ That is, the temporary bonding film 10 can be cut to a size smaller than or equal to the size of the bonding region formed on the device wafer 110. Here, the bonding region refers to a region where the device wafer 110 and the temporarily bonded adhesive film 100 are bonded. The temporary bonding film 100 forms the first bonding layer 102 and the second bonding layer 106 on both sides of the core layer 104, respectively. The temporary bonding film 100 protects the device wafer 110 from thermal and mechanical stresses applied to the device wafer 110 in the thinning process and the post-process of the device wafer 110, And is used to temporarily attach the carrier wafer 120 to the device wafer 110 for smoothness.

The transfer step S12 is a step of transferring the temporarily bonded film 100 and the bonded wafer, which have been cut using the transfer unit, into the temporary bonding chamber 200, respectively.

The loading step S14 includes a first loading step and a second loading step. First, the first loading step is a step of loading the bonded wafer transferred into the temporary bonding chamber 200 into the first loading part 210 of the temporary bonding chamber 200. The second loading step is a step of loading the temporary bonding film 100 to be bonded to the bonded wafer loaded in the first loading part 210 into the second loading part 220 of the temporary bonding chamber 200. The loading order of the first loading step and the second loading step is not limited, and can be loaded first. Also, the first loading step and the second loading step may be performed at the same time.

The aligning step S16 includes aligning the positions of the bonded wafer loaded in the first loading part 210 and the temporary bonding film 100 loaded in the second loading part 220 to the temporarily bonded positions, to be. In order to laminate the temporary bonding film 100 having a size smaller than that of the device wafer 110, a process of aligning to an accurate temporary bonding position is required. The temporary bonding film 100 is laminated between the device wafer 110 and the carrier wafer 120 after cutting. The temporary bonding film 100 is cut to a predetermined size and then laminated between the device wafer 110 and the carrier wafer 120. The temporary bonding film 100 can be cut smaller than the size of the device wafer 110. [ A high throughput and a uniform cutting size can be obtained by preliminarily bonding the device wafer 110 and the carrier wafer 120 by cutting the temporary bonding film 100 in advance. However, vibration may occur when the temporary bonding film 100 is cut. And a lamination align function may be required to precisely adhere the device wafer 110 of the temporary bonding film 100 and the carrier wafer 120 precisely. In the alignment process, an alignment method using vision is suitable.

The aligning step S16 is a process of aligning the bonded wafer loaded in the first loading unit 210 and the temporary wafer loaded in the second loading unit 220 by using the photographing unit 300 provided inside the temporary bonding chamber 200. [ The position of the bonding film 100 is photographed. Then, the position of the temporary bonding film 100 photographed from the photographing unit 300 and the position of the bonded wafer are analyzed using the temporary bonding position detecting unit provided at one side of the temporary bonding chamber 200, and the temporary bonding position is detected . The alignment control unit compares the temporary bonding position detected through the temporary bonding position detecting unit with a predetermined temporary bonding position to generate an alignment control signal for aligning the temporary bonding position of the temporary bonding film 100 and the bonding wafer. Then, the alignment driving unit 230 is driven according to the input of the alignment control signal supplied from the alignment control unit to move the second loading unit 220 to the corresponding alignment position. The alignment drive unit 230 may include a UVW stage that aligns the position of the second loading unit 220 such that the position of the second loading unit 220 can be shifted to the x axis, the y axis, and theta axis.

The temporary bonding body forming step S18 is a step of temporarily bonding the temporary bonding film 100 aligned at the temporary bonding position and the bonded wafer in the predetermined order in the aligning step S16 to form the temporary bonding body. First, the second bonding layer 106 included in the temporary bonding film 100 and the carrier wafer 120 are bonded so as to face each other. Then, the first bonding layer 102 of the temporary bonding film 100 bonded to the carrier wafer 120 and the device wafer 110 are bonded so as to face each other. Here, the order in which the device wafer 110 and the carrier wafer 120 are bonded to the temporary bonding film 100 may be different. For example, the first bonding layer 102 and the device wafer 110 included in the temporary bonding film 100 according to the embodiment of the present invention are bonded so as to face each other. The temporary bonding body may be formed by bonding the second bonding layer 106 included in the temporary bonding film 100 and the carrier wafer 120 so as to face each other. As described above, any one of the first bonding layer 102 and the second bonding layer 106 to be bonded to the device wafer 110 and the carrier wafer 120 may be bonded first and the other one may be bonded later have. Further, the device wafer 110 and the carrier wafer 120 may be bonded to the temporary bonding film 100 at the same time. In order to prevent defects of the device wafer 110 due to bubbles in advance, it is preferable that the temporary bonding chamber forming process forms the temporary bonding body in the vacuum reduced-pressure atmosphere with the internal pressure of the temporary bonding chamber 200 beforehand.

Referring to FIG. 2, a process of cutting the temporary bonding film 10 into a preset size, transferring the temporary bonding film 10 into the temporary bonding chamber 200, and loading the temporary bonding film 10 into the second loading unit 220 will be described.

First, the temporary bonding film 10 is transferred to the cutting step (S20). The transferred temporary bonding film 10 is held on the supporting portion 40 in a supported state. Subsequently, the temporary bonding film 10 is cut into a circle having a preset size by using a cutter forming the cutouts 30 and 32 (S22). The cutter 32 may include a cutting knife or a punch having a pointed shape. Then, the temporarily bonded film 100 is adsorbed by using a plate-shaped adsorption plate 30 which is supported by a cutter and is made porous (S24). For example, the temporary bonding film 100 can be cut using the cutter 32 fixed to the suction plate 30. [ The temporary bonding film 100 may be cut using a laser.

Subsequently, the adsorbed temporary bonding film 100 is transferred. The temporary bonding film 100 adsorbed to the adsorption plate 30 is loaded onto the hand unit 400 of the transfer robot disposed between the cut portions 30 and 32 and the temporary bonding chamber 200, (200). ≪ / RTI > At this time, the hand unit 400 of the transfer robot may be formed with a porous adsorption unit. When the adsorption pressure is continuously maintained on the adsorption plate 30, the temporary adhering film 100 adsorbed on the adsorption plate 30 is kept loaded on the adsorption plate 30. In this state, when the hand unit 400 of the transfer robot is positioned below the suction plate 30, the suction pressure of the suction plate 30 is released. Then, the suction pressure is maintained in the hand unit 400 of the transfer robot. Therefore, the temporary bonding film 100 adsorbed on the adsorption plate 30 is again adsorbed on the hand unit 400 of the transfer robot (S26). Subsequently, the transfer robot transfers the hand unit 400 to which the temporary bonding film 100 is sucked to the inside of the temporary bonding chamber 200 (S28). In this state, when the hand unit 400 of the transfer robot is positioned below the second loading unit 220, the suction pressure of the hand unit 400 is released. The adsorption pressure is maintained in the second loading part 220. Therefore, the temporary bonding film 100 adsorbed on the hand unit 400 of the transfer robot is again attracted to the second loading unit 220 (S30). The temporary bonding film 100 cut through this process is transferred into the temporary bonding chamber 200 and loaded into the second loading unit 220. For reference, the first loading part 210 and the second loading part 220 may include a porous plate-shaped adsorption part formed in a porous form. The porous plate of the adsorption unit may be connected to an adsorption mechanism provided separately to vacuum adsorb the temporary bonding film 100 or the bonded wafer. Therefore, the provisional bonding film 100 or the bonded wafer formed thinly through the porous adsorption portion can be vacuum-adsorbed and can be firmly fixed.

Referring to FIG. 3, the first bonding layer 102 and the second bonding layer 106 are formed on one surface and the other surface of the core layer 104 included in the temporary bonding film 100. The order of forming the first bonding layer 102 and the second bonding layer 106 in the core layer 104 is not limited, and any of them can be formed first. The first bonding layer 102 and the second bonding layer 106 may be simultaneously formed on the core layer 104. [

The core layer 104 serves as a support for the temporary bonding film 100. The thickness of the core layer 104 can be formed to function as a support in the high temperature and chemical environment of the thinning and post-processing processes. The core layer 104 may be formed of a film of a material free from changes in physical properties and shape in various high temperature physical environments or chemical environments during the thinning and post-processing of the device wafer 110. For example, the core layer 104 may use one or more films selected from the group consisting of polyimide (PI), polyethylene naphthalate (PEN), and the like having heat resistance and chemical resistance.

The first bonding layer 102 is formed on one surface of the core layer 104 and bonded to one surface of the bonded wafer. The second bonding layer 106 is formed on the other surface of the core layer 104 and bonded to the other surface of the bonded wafer. The first bonding layer 102 may be attached with a first protective film and the second bonding layer 106 may be attached with a second protective film so that the temporary bonding film 100 is protected from foreign substances. The first protective film and the second protective film may be removed in the temporary bonding material forming step (S18).

For example, in the temporary bonding body forming step S18, first, the carrier wafer 120 is loaded on the first loading unit 210, the temporary bonding film 100 is loaded on the second loading unit 220, So that the second bonding layer 106 included in the film 100 and the carrier wafer 120 face each other. At this time, the positions of the second bonding layer 106 and the carrier wafer 120 of the temporary bonding film 100 are aligned at the temporary bonding positions by using the aligning unit. When the second bonding layer 106 of the temporary bonding film 100 and the carrier wafer 120 are in alignment with each other at the temporary bonding positions while facing each other, . Subsequently, the second bonding layer 106 and the carrier wafer 120 are temporarily bonded. Then, the carrier wafer 120 is loaded on the second loading unit 220 while the second bonding layer 106 and the carrier wafer 120 are temporarily bonded. And loads the device wafer 110 into the first loading unit 210. Then, the first bonding layer 102 of the temporary bonding film 100 and the device wafer 110 face each other. At this time, the positions of the first bonding layer 102 and the device wafer 110 of the temporary bonding film 100 are aligned at the temporary bonding positions by using the alignment unit. When the first bonding layer 102 and the device wafer 110 of the temporary bonding film 100 are aligned with each other at the temporary bonding positions in the state in which they face each other and the first bonding layer 102 is bonded to the first bonding layer 102, . Then, the first bonding layer 102 and the device wafer 110 are temporarily bonded. Then, the temporary bonding film 100 is bonded between the device wafer 110 and the carrier wafer 120.

On the other hand, the first bonding layer 102 and the second bonding layer 106 may have different bonding forces. The thicknesses of the first bonding layer 102 and the second bonding layer 106 may be different from each other. The temporary bonding film 100 according to the present invention can be formed such that the thickness of the first bonding layer 102 is thicker than the thickness of the second bonding layer 106. [ The bonding force of the first bonding layer 102 can be made stronger than the bonding force of the second bonding layer 106. The first bonding layer 102 is a layer facing the device wafer 110. The thickness and the bonding strength of the first bonding layer 102 must take account of both the adhesive force and adhesion between the device wafer 110 and the temporary bonding film 100 and the separability of the temporary bonding film 100 after the thinning and post-processing. For example, the thickness and the bonding strength of the first bonding layer 102 must take into account the problem of the existence of voids between the device wafer 110 and the temporary bonding film 100 or the deterioration of the bonding strength. When the device wafer 110 is separated from the temporary bonding film 100, it should be easily separated.

The second bonding layer 106 is a layer which is bonded to the carrier wafer 120 facing each other. The second bonding layer 106 may have a thickness and bonding force such that the carrier wafer 120 can be easily separated after the post-processing.

Although it has been described that the temporary bonding film 100 is formed of three layers, the temporary bonding film 100 may be formed to have an appropriate thickness as a whole. For example, the temporary bonding film may be formed with only one bonding layer without the core layer 104. [ The temporary bonding film can also be formed by laminating two bonding layers. The temporary bonding film 100 may be formed by a method such as slit coating. Therefore, when the temporary bonding film 100 is used as in the embodiment of the present invention, it is possible to form a uniform thickness and a thick thickness of 100 m or more than a glue type spin coating. Since the temporary bonding film 100 does not use a solvent removal process, the entire process time associated with temporary bonding can be shortened.

On the other hand, the device wafer 110 includes a bonding region where the temporary bonding film 100 is bonded and a non-bonding region of a predetermined size. In the non-junction region of the device wafer 110, a trimming groove 112 having a predetermined size is formed along the periphery of the junction region with a preset width and depth. For reference, the trimming groove 112 can be machined at a distance w2 that is spaced apart by about 500 m from the outer periphery. The width w1 of the trimming groove 112 can be about 200 μm and the height h can be about 100 μm. The device wafer 110 may be loaded into the first loading portion 210 of the temporary bonding chamber 200 in a state where the trimming grooves 112 are previously formed in the edge portions.

The temporary bonding process is to thin the device wafer 110 through back grinding. Therefore, a trimming groove is formed in the edge portion of the device wafer 110 in order to prevent a chipping phenomenon at the edge portion of the device wafer 110 during the back grinding process. The trimming grooves 112 can be removed during the backgrinding process of the device wafer 110. [

If the temporary bonding film 100 is covered with the edge portion of the device wafer 110 on which the trimming groove 112 is formed, the temporary bonding film 100 protrudes outside the device wafer 110 after the backgrinding process. The protruding temporary bonding film 100 may act as a cause of contamination and detection sensor errors in the backgrinding process. Therefore, the temporary bonding film 100 is cut to a size smaller than or equal to the size of the bonding region of the device wafer 110. It is preferable that the diameter of the temporary bonding film 100 is smaller than the diameter of the device wafer 110. [

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. And it goes without saying that they belong to the scope of the present invention.

30; Adsorption plate 32; cutter
100; Temporary bonding film 102; The first bonding layer
104; A core layer 106; The second bonding layer
110; Device wafer 112; Trimming groove
120; Carrier wafer 200; Temporary bonding chamber
210; A first loading unit 220; The second loading portion
230; An alignment driver 300; Shooting section
400; Hand portion

Claims (12)

A cutting step of cutting the temporary bonding film to a predetermined size by using a cut portion,
A transfer step of transferring the cut temporary bonding film and the bonded wafer into the temporary bonding chamber, respectively,
A first loading step of loading the bonded wafer transferred into the temporary bonding chamber into the first loading part of the temporary bonding chamber,
A second loading step of loading the temporary bonding film to be bonded to the bonded wafer loaded in the first loading section into the second loading section of the temporary bonding chamber,
A aligning step of aligning the positions of the bonded wafer loaded on the first loading part and the temporary bonding film loaded on the second loading part to the temporarily bonded positions, respectively, using an aligning part, and
Forming a temporary bonding body by temporarily bonding the temporary bonding film and the bonded wafer aligned in a temporary bonding position in the predetermined order in the alignment step,
Wherein the temporary bonding film is formed of a thermoplastic resin. The method of claim 1,
The temporary bonding film
A core layer serving as a support for the temporary bonding film,
A first bonding layer formed on one surface of the core layer and bonded to one surface of the bonded wafer, and
A second bonding layer formed on the other surface of the core layer and joined to the other surface of the bonded wafer,
Wherein the temporary bonding film is formed by using the temporary bonding film. 3. The method of claim 2,
The bonded wafer
A device wafer bonded to the first bonding layer of the temporary bonding film, and
And a carrier wafer bonded to the second bonding layer of the temporary bonding film. 4. The method of claim 3,
The device wafer
Wherein the non-bonding region includes a bonding region in which the temporary bonding film is bonded and a non-bonding region of a predetermined size, wherein a trimming groove having a predetermined size is formed in the non- Wherein the temporary bonding film is loaded on the second loading portion of the temporary bonding chamber. 4. The method of claim 3,
Wherein the first bonding layer and the second bonding layer have different bonding strengths. 4. The method of claim 3,
Wherein the first bonding layer and the second bonding layer have different bonding layer thicknesses. The method of claim 1,
The cutting step
Cutting the temporary bonding film into a circular shape using a cutter, and
And a step of adsorbing the cut temporarily adhering film by using a plate-shaped adsorption plate formed into a porous shape to support the cutter. 8. The method of claim 7,
Wherein the temporary bonding film is cut at a size smaller than or equal to the size of the bonding region in the cutting step. 9. The method of claim 8,
The temporary bonding material forming step
Loading the carrier wafer on the first loading portion and loading the temporary bonding film on the second loading portion so that the second bonding layer of the temporary bonding film and the carrier wafer face each other;
Aligning the positions of the second bonding layer and the carrier wafer to the temporary bonding positions using the alignment unit,
Removing the second protective film bonded to the second bonding layer if the second bonding layer and the carrier wafer are aligned at the temporary bonding positions,
Temporarily bonding the second bonding layer and the carrier wafer,
Loading the carrier wafer onto the second loading portion while the second bonding layer and the carrier wafer are temporarily bonded,
Loading the device wafer onto the first loading portion to load the first bonding layer of the temporary bonding film and the device wafer facing each other,
Aligning the positions of the first bonding layer and the device wafer to the temporary bonding positions using the alignment unit,
Removing the first protective film bonded to the first bonding layer when the first bonding layer and the device wafer are aligned at the temporary bonding positions,
Temporarily bonding the first bonding layer and the device wafer
Wherein the temporary bonding film is formed of a thermoplastic resin. The method of claim 9,
Wherein the temporary bonding body forming step forms a temporary bonding body in a state in which the internal pressure of the temporary bonding chamber is vacuum-reduced. 8. The method of claim 7,
Wherein the transferring step comprises using a temporary bonding film for transferring the temporary bonding film adsorbed on the adsorption plate to the inside of the temporary bonding chamber with the hand part of the transfer robot disposed between the cutting part and the temporary bonding chamber Temporary bonding method. The method of claim 1,
The aligning step
A photographing step of photographing the positions of the bonded wafer loaded on the first loading part and the temporary bonding film loaded on the second loading part by using an imaging part provided inside the temporary bonding chamber,
A temporary bonding position detecting step of analyzing positions of the temporary bonding film and the bonded wafer photographed from the photographing unit and detecting a temporary bonding position using a temporary bonding position detecting unit provided at one side of the temporary bonding chamber,
And a temporary bonding position aligning step of aligning the temporary bonding position between the temporary bonding film and the bonding wafer by comparing the temporary bonding position detected through the temporary bonding position detecting unit with a preset temporary bonding position, Bonding method.
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KR20190123833A (en) * 2018-04-24 2019-11-04 한국전자통신연구원 Method and device for fabrication of stretchable electronic device

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KR20190123833A (en) * 2018-04-24 2019-11-04 한국전자통신연구원 Method and device for fabrication of stretchable electronic device

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