KR20170036292A - Semiconductor light emitting device and method of manufacturing the same - Google Patents

Semiconductor light emitting device and method of manufacturing the same Download PDF

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KR20170036292A
KR20170036292A KR1020150135273A KR20150135273A KR20170036292A KR 20170036292 A KR20170036292 A KR 20170036292A KR 1020150135273 A KR1020150135273 A KR 1020150135273A KR 20150135273 A KR20150135273 A KR 20150135273A KR 20170036292 A KR20170036292 A KR 20170036292A
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semiconductor
layer
light emitting
growth substrate
emitting device
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KR1020150135273A
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Korean (ko)
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KR101733043B1 (en
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안상정
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안상정
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
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Abstract

The present disclosure relates to a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a non-transmissive growth substrate, and a semiconductor light emitting unit. The semiconductor light emitting unit comprises a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different from the first conductivity, an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light by rebinding of an electron and a hole, a plurality of semiconductor layers growing on a lower side of the non-transmissive growth substrate, a first electrode located under the semiconductor layers, electrically communicating with the first semiconductor layer, and supplying either an electron or a hole, and a second electrode located under the semiconductor layers, electrically communicating with the second semiconductor layer, and supplying either an electron or a hole. The non-transmissive growth substrate comprises a cavity to expose a plurality of the semiconductor layers.

Description

Technical Field [0001] The present invention relates to a semiconductor light emitting device and a method of manufacturing the same,

The present disclosure relates generally to a semiconductor light emitting device, and more particularly, to a semiconductor light emitting device utilizing a non-light emitting growth substrate and a manufacturing method thereof.

Herein, the background art relating to the present disclosure is provided, and these are not necessarily meant to be known arts. Also, in this specification, directional indication such as up / down, up / down, etc. is based on the drawings.

1 is a view showing an example of a conventional semiconductor light emitting device chip.

The semiconductor light emitting device chip includes a buffer layer 20, a first semiconductor layer 30 (e.g., an n-type GaN layer) 30 having a first conductivity, An active layer 40 (e.g., INGaN / (In) GaN MQWs) that generates light through recombination of electrons and holes, a second semiconductor layer 50 (e.g., a p-type GaN layer) having a second conductivity different from the first conductivity, A light transmissive conductive film 60 for current diffusion and an electrode 70 serving as a bonding pad are formed on the first semiconductor layer 30 and a bonding pad is formed on the first semiconductor layer 30 exposed and etched. Electrodes 80 (for example, Cr / Ni / Au laminated metal pads) serving as electrodes are formed. The semiconductor light emitting device of the type shown in FIG. 1 is called a lateral chip in particular. Here, when the substrate 10 side is electrically connected to the outside, it functions as a mounting surface.

2 is a view showing another example of the semiconductor light-emitting device chip disclosed in Korean Patent Laid-Open Publication No. 10-2015-0073521.

The semiconductor light emitting device chip comprises a substrate 10, a first semiconductor layer 30 having a first conductivity, an active layer 40 for generating light through recombination of electrons and holes, A second semiconductor layer 50 having a second conductivity is sequentially deposited on the substrate 10 and three layered electrode films 90, 91 and 92 for reflecting light toward the substrate 10 are formed. The first electrode film 90 may be an Ag reflective film, the second electrode film 91 may be an Ni diffusion prevention film, and the third electrode film 92 may be an Au bonding layer. An electrode 80 functioning as a bonding pad is formed on the first semiconductor layer 30 exposed by etching. Here, when the electrode film 92 side is electrically connected to the outside, it functions as a mounting surface. The semiconductor light emitting device of the type shown in FIG. 2 is called a flip chip. In the case of the flip chip shown in FIG. 2, the electrodes 80 formed on the first semiconductor layer 30 are lower in height than the electrode films 90, 91, and 92 formed on the second semiconductor layer, . Where the height reference may be the height from the substrate 10. Since most of the light generated in the active layer 40 is emitted to the substrate 10 side, the flip chip is required to remove the non-transparent substrate when the substrate 10 uses a light-transmitting substrate or when a non-light-transmitting substrate is used. In addition, since the sapphire substrate, which is one example of the light-transmitting substrate, is higher in price than the silicon substrate, which is one example of the non-light-transmitting substrate,

3 is a view showing an example of a conventional semiconductor light emitting device.

The semiconductor light emitting device 100 is provided with lead frames 110 and 120, a mold 130, and a vertical type light emitting chip 150 in a cavity 140. The cavity 140 is formed in the cavity 130, Is filled with an encapsulant 170 containing the wavelength converting material 160. [ The lower surface of the vertical type semiconductor light emitting device chip 150 is electrically connected directly to the lead frame 110 and the upper surface thereof is electrically connected to the lead frame 120 by the wire 180. A part of the light emitted from the vertical type semiconductor light emitting device chip 150 excites the wavelength conversion material 160 to produce light of a different color, and two different lights may be mixed to form white light. For example, the semiconductor light emitting device chip 150 generates blue light, and the light generated by exciting the wavelength conversion material 160 is yellow light, and blue light and yellow light may be mixed to form white light. FIG. 2 shows a semiconductor light emitting device using the vertical semiconductor light emitting device chip 150, but a semiconductor light emitting device having a shape as shown in FIG. 3 may also be manufactured using a lateral chip or a flip chip as the semiconductor light emitting device chip. In recent years, the size of the semiconductor light emitting device tends to be miniaturized. Accordingly, a chip size package (CSP) has been developed more actively than a semiconductor light emitting device having the shape shown in FIG.

This disclosure shows that the semiconductor light emitting device is a semiconductor light emitting device which is small in chip size, and that the semiconductor light emitting device can be used without removing the non-transmitting growth substrate, while using a low-cost non-light transmitting growth substrate.

This will be described later in the Specification for Enforcement of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, in a semiconductor light emitting device, a non-transmissive growth substrate; A first semiconductor layer having a first conductivity; a second semiconductor layer having a second conductivity different from the first conductivity; and a second semiconductor layer interposed between the first semiconductor layer and the second semiconductor layer, A plurality of semiconductor layers which are grown on the underside of the non-light-emitting growth substrate and which are disposed under the plurality of semiconductor layers and which are in electrical communication with the first semiconductor layer and supply one of electrons and holes And a second electrode which is located below the plurality of semiconductor layers and which is in electrical communication with the second semiconductor layer and supplies one of electrons and holes, the non-transmissive growth substrate comprising: And a cavity to expose the plurality of semiconductor layers.

According to another aspect of the present disclosure, there is provided a method of manufacturing a semiconductor light emitting device, comprising the steps of: forming a first conductive layer, a second conductive layer and a first conductive layer on a non- (S1) growing a plurality of semiconductor layers including an active layer interposed between two conductive layers; Forming a first passageway and a groove in the plurality of semiconductor layers connected to the first conductive layer (S2); Forming an insulating layer filling the first passageway and the groove and covering the second conductive layer (S3); Forming a third passageway through the insulating layer and the first passageway through the second passageway and the insulating layer connected to the first conductive layer; (S5) forming a first electrode connected to the second passage and a second electrode connected to the third passage below the insulating layer; And forming a cavity in the non-light-transmitting growth substrate (S6).

This will be described later in the Specification for Enforcement of the Invention.

1 is a view showing an example of a conventional semiconductor light emitting device chip,
2 is a view showing another example of the semiconductor light-emitting device chip disclosed in Korean Patent Laid-Open No. 10-2015-0073521,
3 is a view showing an example of a conventional semiconductor light emitting device,
4 is a view showing an example of a semiconductor light emitting device according to the present disclosure,
5 is a view showing an example of a cavity opening shape of the semiconductor light emitting device according to the present disclosure,
6 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
7 is a view showing an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure,
8 is a view showing an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure,
9 is a view showing an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure;

The present disclosure will now be described in detail with reference to the accompanying drawings.

4 is a view showing an example of a semiconductor light emitting device according to the present disclosure.

Fig. 4 (a) is a perspective view, Fig. 4 (b) is a sectional view taken along AA ', and Figs. 4 (c) to 4 (e) are bottom views.

The semiconductor light emitting device 200 according to the present disclosure includes a non-light-emitting growth substrate 210 and a semiconductor light emitting unit 220.

The non-transmissive growth substrate 210 may include a cavity 230 such that the upper side 221 of the plurality of semiconductor layers 222 is exposed. Since the non-transmissive growth substrate 210 is non-transmissive, the light emitted from the semiconductor light emitting unit 220 goes upward through the cavity 230. The cavity 230 can be obtained through an etching process. It is preferable that the side surface 231 of the cavity 230 is inclined so as to reflect light emitted from the semiconductor light emitting portion 220 and to move upward. In addition, the side surface 231 of the cavity 230 may include a reflection layer 232 to improve reflection efficiency of light. The material of the reflective layer 232 may be any material with good reflection efficiency. For example, aluminum (Al), silver (Ag), and distributed Bragg reflector (DBR). Further, the shape of the upper side 233 of the cavity 230 is preferably the same as the plan view of the non-transmissive growth substrate in order to increase the light extraction efficiency. The shape of the upper side 233 of the cavity 230 will be described with reference to FIG. In addition, the cavity 230 may be filled with the transparent encapsulant 240. The translucent encapsulant 240 may include a resin 241 and a wavelength converting material 242. [ The wavelength conversion material 242 may be any material as long as it converts light emitted from the semiconductor light emitting unit 220 into light having a different wavelength (for example, pigment, dye, etc.) (Sr, Ba, Ca) 2 SiO 4: Eu is preferred to use, and so on). As the resin 241, an epoxy resin, a silicone resin, or the like can be used. Further, the translucent encapsulant 240 may further contain a light scattering material and the like. As the non-light-transmitting growth substrate 210, a silicon growth substrate is preferable.

The semiconductor light emitting portion 220 includes a plurality of semiconductor layers 222, a first electrode 226, and a second electrode 227. The plurality of semiconductor layers 222 may include a first semiconductor layer 223 having a first conductivity that grows below the non-light-emitting growth substrate 210, a second semiconductor layer 225 having a second conductivity different from the first conductivity, And an active layer 224 interposed between the first semiconductor layer and the second semiconductor layer and generating light through recombination of electrons and holes. Although not shown, may include additional layers including a buffer layer as required. The upper side 221 of the plurality of semiconductor layers 222 exposed by the cavity 230 may be the first semiconductor layer 223 but the upper side 221 of the plurality of semiconductor layers 222 exposed when the buffer layer is included ) May be a buffer layer. The first electrode 226 is in electrical communication with the first semiconductor layer 223 and supplies either electrons or holes. The first electrode 226 may be directly connected to the first semiconductor layer 223 as illustrated in Figure 2. The first electrode 226 may be a separate electrical passageway for electrical communication with the first semiconductor layer 223 228 < / RTI > To prevent the first electrode 226 from contacting the second semiconductor layer 225 when the first electrode 226 is in electrical communication with the first semiconductor layer 223 through the electrical path 228, The semiconductor light emitting portion 220 may include an insulating layer 250 formed between the second semiconductor layer 225 and the first electrode 226 and on the side surface of the electrical path 228. The second electrode 227 is in electrical communication with the second semiconductor layer 225 and supplies one of electrons and holes. The second electrode 227 electrically connects the second electrode 227 and the second semiconductor layer 225 to each other when the insulating layer 250 is positioned between the second semiconductor layer 225 and the second electrode 227. [ And may include an electrical passage 229 for connecting. The first electrode 226 and the second electrode 227 are located below the plurality of semiconductor layers 222. It is preferable that the first electrode 226 and the second electrode 227 reflect light emitted from the active layer 224 toward the non-transparent growth substrate 210 side. When the first electrode 226 and the second electrode 227 reflect light toward the non-transmissive growth substrate 210, the first electrode 226 and the second electrode 227 are aligned in a direction (d). When the first electrode 226 and the second electrode 227 have a reflection function, they may have an electrode structure as shown in Fig. Also, when the first electrode 226 and the second electrode 227 are formed to be wide, the heat radiation effect is also good. In addition, the insulating layer 250 formed between the first electrode 226 and the second electrode 227 and the plurality of semiconductor layers 222 may be a reflective layer for enhancing the reflection efficiency. When the insulating layer 250 functions as a reflective layer, it is also possible to reflect light exiting the portion where the first electrode 226 and the second electrode 227 are not formed. The insulating layer 250 having a reflecting function can be referred to as a non-conductive reflective film 250, and the non-conductive reflective film is described in detail in Korean Patent Publication No. 10-1368720. In addition, when the semiconductor light emitting portion 220 includes the non-conductive reflective film 250, the widths of the first electrode 226 and the second electrode 227 may be reduced as shown in FIG. 4 (e). The smaller the area of the first electrode 226 and the second electrode 227 formed on the non-conductive reflective film 250, the higher the efficiency of light reflection toward the non-transparent growth substrate 210 side. It is preferable that the first electrode 226 and the second electrode 227 are adjusted to a proper size between the reflection efficiency and the heat radiation function because the first electrode 226 and the second electrode 227 also have a heat radiation function Do. Alternatively, a metal reflection layer may be formed on the plurality of semiconductor layers 222 although not shown. Methods of forming the metal reflective layer are well known to those skilled in the art and are not described separately.

5 is a view showing an example of a cavity shape of the semiconductor light emitting device according to the present disclosure. 5 (a) to 5 (c) are plan views of a non-transmissive growth substrate including a cavity, and FIG. 5 (d) is a cross section taken along AA 'of FIG. 5 (b).

The semiconductor light emitting device according to the present disclosure is characterized in that light emitted from the semiconductor light emitting portion is emitted through a cavity included in the non-light emitting growth substrate. Therefore, the larger the size of the cavity through which the light exits, the better. For example, if the plan view shape of the non-transparent growth substrate 300 is rectangular and the shapes of the upper and lower sides 311 and 312 of the cavity 310 are circular as shown in FIG. 5 (a), the size of the cavity 310 is limited An unnecessary portion 313 is generated. Therefore, the shapes of the upper and lower sides 311 and 312 of the cavity 310 are preferably the same as those of the non-transmissive growth substrate 300 as shown in FIGS. 5 (b) and 5 (c). The upper side 311 and the lower side 312 of the cavity 310 may be the same size but the cavity side 314 is preferably inclined for reflection efficiency. The planar portion of the upper side 311 may be larger than the planar portion of the lower side 312 when the side surface 314 of the lower portion 314 is inclined. However, since the light emitted from the semiconductor light emitting unit 320 passes through the lower side 312 of the cavity 310 to the upper side 311, it is not preferable that the planar side of the lower side 312 is larger than the planar side of the upper side 311.

6 is a view showing another example of the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 400 according to the present disclosure includes a non-light transmitting growth substrate 410 including a cavity 430 and a semiconductor light emitting portion 420. The semiconductor light emitting device 400 includes a blocking wall 440 disposed on a side surface of the semiconductor light emitting unit 420 and blocking light emitted to the side of the semiconductor light emitting unit 420. The features of the semiconductor light emitting device 400 shown in FIG. 6 that are the same as those of the semiconductor light emitting device 200 shown in FIG. 4 are not separately described. 6 is a view corresponding to the sectional view of Fig. 4 (b). The blocking wall 440 is preferably a reflective wall 440 that reflects light. The reflective wall 440 may be formed of a white reflective resin. For example, the white reflecting resin is preferably a white silicone resin. 6 (b), which is a bottom view of FIG. 6 (a), the blocking wall 440 surrounds the sides of the plurality of semiconductor layers 421. FIG. However, the blocking wall 450 may surround not only the entire side surface of the plurality of semiconductor layers 421 but also a part of the side surface, as shown in FIG. 6 (b).

7 to 9 are views showing an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device according to the present disclosure includes a first conductive layer 511, a second conductive layer 513, and an active layer (not shown) interposed between the first conductive layer and the second conductive layer, 512 are grown (S1). Thereafter, a first passageway 520 connected to the first conductive layer 511 of the plurality of semiconductor layers 510 is formed and a groove 570 for separating the plurality of semiconductor layers 510 is formed (S2). Thereafter, the insulating layer 530 filling the first passageway 520 and the groove 570 and covering the second conductive layer 513 is formed (S3). The insulating layer 530 may be a non-conductive reflective film. A second channel 521 penetrating through the insulating layer 530 and the first passage 520 and connected to the first conductive layer 511 and an insulating layer 530 connected to the second conductive layer 513 through the insulating layer 530 Three passages 522 are formed (S4). At this time, the insulating layer 530 on the side of the first passage 520 is not removed when the second passage 521 is formed. Each passageway 521, 522 may be filled with electrically conductive material. A first electrode 540 connected to the second passage 521 and a second electrode 541 connected to the third passage 522 are formed below the insulating layer 530 (S5). Each of the passages 521 and 522 may be filled with a material that is electrically conductive when the first electrode 540 and the second electrode 541 are formed. As the passages 521 and 522 are filled with electrically conductive material, they can become electrical paths. Thereafter, the cavity 550 is formed on the non-transmissive growth substrate 500 (S6). (If there is any additional information about the etching method for forming the cavity in the non-transmissive growth substrate, for example, Size, etc.). It is preferable that the width 551 of the lower side of the casing 550 is not larger than the width 571 of the groove 570. Then, the cavity 550 is filled with the transparent encapsulant 560 (S7). Thereafter, the semiconductor light emitting device 600 is cut along the cut line 590 to form the semiconductor light emitting device 600 having the respective blocking walls 580 on the side (S8). However, in the method for manufacturing a semiconductor light emitting device according to the present disclosure, the manufacturing procedure (steps S1 to S8) is included in the scope of the present disclosure to the extent that those skilled in the art can easily modify it. For example, the step S6 of forming the cavity 550 may be performed before the step S1, and may be performed between the steps S1 to S8. For example, step S6 may be performed in conjunction with other etching processes S2 and S4. In addition, the blocking wall 580 may be filled with a reflective material in the groove 570 to become a reflecting wall 580 having a reflecting function. For example, a white reflecting resin may be filled in the groove 570 between steps S2 and S3 to form a reflecting wall 580 having a reflecting function. 9, when the passages 521 and 522 are formed in step S4, a passageway 572 in which the insulating layer 530 is partially removed may also be formed in the groove 570 (S4-1). Preferably a passageway 572 connected to the non-transmissive growth substrate 500. In the subsequent step, the passage 572 may be filled with a reflective material to form a blocking wall. When the insulating layer 530 on the side surface of the groove 570 is not removed when forming the passages 572, a metal material (for example, Ag) having good reflection performance may be filled with the reflective material. However, when the insulating layer 530 is a non-conductive reflective film, the reflective material may not be filled in the groove 570 separately. (I would like to add to the manufacturing method, please review the parts that need modification)

Various embodiments of the present disclosure will be described below.

(1) A semiconductor light emitting device comprising: a non-transmissive growth substrate; A first semiconductor layer having a first conductivity; a second semiconductor layer having a second conductivity different from the first conductivity; and a second semiconductor layer interposed between the first semiconductor layer and the second semiconductor layer, A plurality of semiconductor layers including an active layer that generates light through recombination and growing on the lower side of the non-light-emitting growth substrate; a plurality of semiconductor layers which are located below the plurality of semiconductor layers and are in electrical communication with the first semiconductor layer, And a semiconductor light emitting portion disposed below the first electrode and the plurality of semiconductor layers and electrically connected to the second semiconductor layer and supplying one of electrons and holes, wherein the non-transmissive growth substrate includes a plurality of And a cavity to expose the semiconductor layer.

(2) The semiconductor light emitting device according to (2), wherein the non-transmissive growth substrate is a silicon substrate.

(3) The semiconductor light emitting device according to any one of (1) to (3), wherein the cavity is filled with a translucent encapsulant.

(4) The encapsulating material includes a wavelength converting material.

(5) A semiconductor light emitting device, which is located at a side surface of a semiconductor light emitting portion and has a non-transmitting blocking wall.

(6) The semiconductor light emitting device according to (6), wherein the blocking wall is a reflecting wall.

(7) The semiconductor light emitting device according to (7), wherein the first electrode and the second electrode reflect light emitted from the active layer toward the non-transparent growth substrate.

(8) A semiconductor light emitting device, wherein a reflective layer is formed on a side surface of the cavity.

(9) A semiconductor light emitting device comprising a first electrode, an insulating layer between the second electrode and a plurality of semiconductor layers.

(10) The semiconductor light emitting device according to claim 1, wherein the insulating layer is a non-conductive reflective film that reflects light emitted from the active layer toward the non-transparent growth substrate.

(11) The semiconductor light emitting device according to (11), wherein the cavity includes an upper opening and a lower opening, wherein the plane of the upper opening is larger than the plane of the lower opening.

(12) The semiconductor light emitting device according to (12), wherein the cavity includes an upper opening and a lower opening, and the plan view shape of the upper opening and the lower opening is the same as the plan view of the non-transparent growth substrate.

(13) A non-transmissive growth substrate is a silicon substrate, the cavity is filled with a translucent encapsulant including a wavelength conversion material, the side surface is a sloped surface covered with a reflective layer, the semiconductor light emitting portion includes a non- And the blocking wall is located on a side surface of the semiconductor light emitting portion, and is a reflecting wall.

(14) A method of manufacturing a semiconductor light emitting device, comprising the steps of: forming a plurality of semiconductor layers including a first conductive layer, a second conductive layer, and an active layer interposed between a first conductive layer and a second conductive layer on a non- Growing (S1); Forming a first passageway and a groove in the plurality of semiconductor layers connected to the first conductive layer (S2); Forming an insulating layer filling the first passageway and the groove and covering the second conductive layer (S3); Forming a third passageway through the insulating layer and the first passageway through the second passageway and the insulating layer connected to the first conductive layer; (S5) forming a first electrode connected to the second passage and a second electrode connected to the third passage below the insulating layer; And forming a cavity in the non-light-transmitting growth substrate (S6).

(15) the step (S6) is performed before the step (S5).

(16) a step (S7) of filling the cavity with a light-transmitting encapsulant after step S6.

(17) A method for manufacturing a semiconductor light-emitting device, comprising the steps of: filling a material with electrical conductivity between the second passage and the third passage between steps S4 and S5;

(18) In the step (S4), a channel connected to the non-transparent growth substrate is formed in the groove.

(19) is filled with a reflective material that reflects light.

(20) The method of manufacturing a semiconductor light-emitting device according to claim 1, wherein the insulating layer is a non-conductive reflective film.

According to the present disclosure, it is possible to obtain a semiconductor light emitting device having a chip size that emits light toward the non-transmissive growth substrate without removing the non-transmissive growth substrate, while using an inexpensive non-transmissive growth substrate as the growth substrate.

Semiconductor light emitting devices: 100, 200, 400, 600
Semiconductor light emitting units: 150, 220, 320, 420,
Non-transmissive growth substrate: 210, 300, 410, 500
Cavities: 230, 310, 430, 550

Claims (20)

In the semiconductor light emitting device,
Nonpermeable growth substrate; And,
A semiconductor light emitting device comprising: a first semiconductor layer having a first conductivity; a second semiconductor layer having a second conductivity different from the first conductivity; and a second semiconductor layer interposed between the first semiconductor layer and the second semiconductor layer, A plurality of semiconductor layers which are grown on the underside of the non-transparent growth substrate and which are located below the plurality of semiconductor layers and which are in electrical communication with the first semiconductor layer and supply one of electrons and holes, And a second electrode that is positioned below the plurality of semiconductor layers and electrically communicates with the second semiconductor layer and supplies one of electrons and holes,
Wherein the non-light-transmitting growth substrate includes a cavity to expose a plurality of semiconductor layers. The method according to claim 1,
Wherein the non-light-transmitting growth substrate is a silicon growth substrate. The method according to claim 1,
Wherein the cavity is filled with a light-transmitting encapsulant. The method of claim 3,
Wherein the translucent encapsulant comprises a wavelength converting material. The method according to claim 1,
And a non-transmitting blocking wall which is located on a side surface of the semiconductor light emitting portion. The method of claim 5,
And the blocking wall is a reflecting wall. The method according to claim 1,
Wherein the first electrode and the second electrode reflect light emitted from the active layer toward the non-transparent growth substrate. The method according to claim 1,
Wherein a reflective layer is formed on a side surface of the cavity. The method according to claim 1,
And an insulating layer between the first and second electrodes and the plurality of semiconductor layers. The method of claim 9,
Wherein the insulating layer is a non-conductive reflective film that reflects light emitted from the active layer toward the non-light-transmitting growth substrate. The method according to claim 1,
Wherein the cavity includes an upper opening and a lower opening, and the plane of the upper opening is larger than the plane of the lower opening. The method according to claim 1,
Wherein the cavity includes an upper opening and a lower opening, and the planar shape of the upper opening and the lower opening is the same as the plan view of the non-transparent growth substrate. The method according to claim 1,
The non-transmissive growth substrate
Silicon growth substrate,
The cavity
A side surface is a sloped surface covered with a reflective layer,
The semiconductor light emitting portion
And a non-conductive reflective film,
Blocking wall;
Wherein the semiconductor light emitting portion is a reflective wall located on a side surface of the semiconductor light emitting portion. A method of manufacturing a semiconductor light emitting device,
(S1) growing a plurality of semiconductor layers including a first conductive layer, a second conductive layer, and an active layer interposed between the first conductive layer and the second conductive layer on a non-light-transmitting growth substrate;
Forming a first passageway and a groove in the plurality of semiconductor layers connected to the first conductive layer (S2);
Forming an insulating layer filling the first passageway and the groove and covering the second conductive layer (S3);
Forming a third passageway through the insulating layer and the first passageway through the second passageway and the insulating layer connected to the first conductive layer;
(S5) forming a first electrode connected to the second passage and a second electrode connected to the third passage below the insulating layer; And,
(S6) forming a cavity in the non-light-transmitting growth substrate. 15. The method of claim 14,
And the step S6 is located before the step S5. 15. The method of claim 14,
(S7) of filling a cavity with a light-transmitting encapsulant after step S6. 15. The method of claim 14,
And the second passage and the third passage are filled with a material that allows electricity to flow between the steps S4 and S5 or S5. 15. The method of claim 14,
And a passageway connected to the non-transmissive growth substrate is formed in the groove in step < RTI ID = 0.0 > S4 < / RTI & 19. The method of claim 18,
And filling the channel formed in the groove with a reflective material reflecting light. 15. The method of claim 14,
Wherein the insulating layer is a non-conductive reflective film.
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