KR20170031885A - Ingot grower - Google Patents
Ingot grower Download PDFInfo
- Publication number
- KR20170031885A KR20170031885A KR1020150129405A KR20150129405A KR20170031885A KR 20170031885 A KR20170031885 A KR 20170031885A KR 1020150129405 A KR1020150129405 A KR 1020150129405A KR 20150129405 A KR20150129405 A KR 20150129405A KR 20170031885 A KR20170031885 A KR 20170031885A
- Authority
- KR
- South Korea
- Prior art keywords
- crucible
- measuring rod
- silicon melt
- heat
- sensing circuit
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 40
- 239000010703 silicon Substances 0.000 claims abstract description 40
- 239000004020 conductor Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 10
- 230000003028 elevating effect Effects 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims 1
- 239000000155 melt Substances 0.000 description 8
- 239000007770 graphite material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to an ingot growing apparatus capable of precisely measuring a moment when a measuring rod and a silicon melt contact with each other.
The present invention relates to a crucible comprising an electric conductor containing a silicon melt; A measuring rod provided on the upper side of the crucible so as to be able to move up and down and made of an electric conductor in contact with the silicon melt surface; And a sensing circuit connected to the measuring rod and sensing an instantaneous current as the measuring rod comes into contact with the silicon melt surface.
Description
The present invention relates to an ingot growing apparatus capable of precisely measuring a moment when a measuring rod and a silicon melt contact with each other.
In general, in order to manufacture a silicon wafer, monocrystalline silicon must be grown in an ingot form, and a czochralski (CZ) method can be applied.
Such a silicon single crystal growth apparatus includes a surface of a silicon melt and a heat shield member so that heat radiated from the heater can not be transmitted to the silicon single crystal ingot.
In the case of installing a heat shield member, a gap is maintained between the lower end of the heat shield member and the surface of the silicon melt. This gap is called a melt gap, and the quality and productivity of the silicon single crystal ingot are increased The melt gap must be kept constant for the purpose of
Accordingly, when the melting process of the silicon melt is completed, the lower end (e.g., the measuring rod) of the heat shield member and the surface of the silicon melt are brought into contact with each other to set the melt gap or measure the melt gap, Can be measured.
Korean Patent Laid-Open Publication No. 2014-0035625 discloses scale loading in a reflector of an ingot growing apparatus which is filled with a colored filler on the inside of a quartz tube in order to improve the accuracy of melt-gap measurement.
Korean Patent Laid-Open Publication No. 2014-0097834 discloses a measuring rod for a single crystal ingot growing apparatus including a negative or embossed indication portion on the lower surface.
However, when the operator directly contacts the above-mentioned measuring rod with the silicon melt surface at the initial stage of the process, the initial melt gap is set by adjusting the height of the crucible containing the silicon melt, Measure the melt gap.
According to the conventional technology, the depth at which the measuring rod and the silicon melt surface are in contact with each other can be varied, thereby causing an error of 1 to 2 mm in the initial gap set for each worker. Further, have.
It is an object of the present invention to provide an ingot growing apparatus capable of precisely measuring a moment when a measuring rod and a silicon melt are in contact with each other.
The present invention relates to a crucible comprising an electric conductor containing a silicon melt; A measuring rod provided on the upper side of the crucible so as to be able to move up and down and made of an electric conductor in contact with the silicon melt surface; And a sensing circuit connected to the measuring rod and sensing an instantaneous current as the measuring rod comes into contact with the silicon melt surface.
The ingot growing apparatus according to the present invention can precisely measure the moment when the measuring rod and the silicon melt contact with each other by applying a sensing circuit for sensing the instantaneous current as the measuring rod comes into contact with the silicon melt surface.
Therefore, the position of the measuring rod and the silicon melt can be precisely measured at the moment of contact, thereby adjusting the height of the crucible to accurately set the initial gap and also improving the quality of the ingot.
BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing an example of an ingot growing apparatus of the present invention. Fig.
Fig. 2 shows an example of a sensing circuit applied to Fig. 1; Fig.
Hereinafter, the present embodiment will be described in detail with reference to the accompanying drawings. It should be understood, however, that the scope of the inventive concept of the present embodiment can be determined from the matters disclosed in the present embodiment, and the spirit of the present invention possessed by the present embodiment is not limited to the embodiments in which addition, Variations.
FIG. 1 is a view showing an example of an ingot growing apparatus of the present invention, and FIG. 2 is a diagram showing an example of a sensing circuit applied to FIG.
1 and 2, the ingot growing apparatus of the present invention includes a
The
Further, a camera such as a CCD or the like will measure the melt gap, which is the distance between the measuring rod and the silicon melt, which will be described later, through the view port.
The
The
The
The
The
The elevating
The
At this time, the
The
The
The
The
The
Of course, the
Accordingly, when the
However, when the
Accordingly, the
110: chamber 120: crucible
130: crucible supporting part 140: heater
150: Insulation 170: Lift member
180: heat shield member 190: measuring stick
200: sensing circuit
Claims (6)
A measuring rod provided on the upper side of the crucible so as to be able to move up and down and made of an electric conductor in contact with the silicon melt surface; And
And a sensing circuit connected to the measuring rod and sensing an instantaneous current as the measuring rod comes into contact with the silicon melt surface.
A heat shield member made of an electric conductor provided to hang above the crucible and cooling a single crystal ingot grown from the silicon melt;
An elevating member connected to the upper side of the heat shielding member and composed of an electric conductor for elevating and lowering the heat shielding member; And
And a crucible supporting member provided below the crucible and supporting the crucible so that the crucible can be raised and lowered,
The measuring rod is fixed to the lower end of the heat shield member,
Wherein the sensing circuit is configured to connect the elevation member and the crucible supporting member.
A heat insulating member provided between the chamber and the heater, the heat insulating member being capable of receiving the upper end of the heat shielding member; And
And an insulating member for cutting off electrical connection between the heat shield member and the heat insulating member.
And an insulating member for disconnecting an electrical connection between the elevating member and the chamber.
The heat shielding member, the elevating member and the crucible supporting member are made of graphite,
Wherein the measuring rod is made of quartz (SiO 2 ) material.
Wherein the sensing circuit comprises:
And an operation switch for turning on / off the instantaneous current.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020150129405A KR101723740B1 (en) | 2015-09-14 | 2015-09-14 | Ingot grower |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020150129405A KR101723740B1 (en) | 2015-09-14 | 2015-09-14 | Ingot grower |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20170031885A true KR20170031885A (en) | 2017-03-22 |
KR101723740B1 KR101723740B1 (en) | 2017-04-18 |
Family
ID=58497227
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020150129405A KR101723740B1 (en) | 2015-09-14 | 2015-09-14 | Ingot grower |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR101723740B1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115652409A (en) * | 2022-10-25 | 2023-01-31 | 浙江晶盛机电股份有限公司 | Power-off protection method for crystal growth furnace and crystal growth furnace |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001261483A (en) * | 2000-03-22 | 2001-09-26 | Mitsubishi Materials Silicon Corp | Method for detecting gap in single crystal pulling machine and device for controlling the gap |
-
2015
- 2015-09-14 KR KR1020150129405A patent/KR101723740B1/en active IP Right Grant
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115652409A (en) * | 2022-10-25 | 2023-01-31 | 浙江晶盛机电股份有限公司 | Power-off protection method for crystal growth furnace and crystal growth furnace |
CN115652409B (en) * | 2022-10-25 | 2023-09-05 | 浙江晶盛机电股份有限公司 | Crystal growth furnace power-off protection method and crystal growth furnace |
Also Published As
Publication number | Publication date |
---|---|
KR101723740B1 (en) | 2017-04-18 |
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