KR20170000328U - Deposition apparatus for deposition of a material on a substrate and method for depositing a material on a substrate - Google Patents

Abstract

A deposition apparatus (300) for depositing a material on a substrate is provided. The deposition apparatus 300 includes two or more processing chambers including a first processing chamber 310 and a second processing chamber 320; A substrate support 330 extending through at least the first processing chamber 310 and the second processing chamber 320; And two or more deposition source assemblies including a first deposition source assembly 350 in a first processing chamber 310 and a second deposition source assembly 360 in a second processing chamber 320. Each of the two or more deposition source assemblies includes at least one deposition source support (351, 361) configured to support at least one first deposition source and at least one process device. The at least one deposition source supporter (351, 361) is configured to be movable between at least a first position and a second position. In a first position, at least one first deposition source is oriented toward the substrate support 330, and in a second position, at least one process device is oriented toward the substrate support 330.

Description

FIELD OF THE INVENTION [0001] The present invention relates to a deposition apparatus for depositing a material on a substrate, and a method for depositing a material on a substrate. BACKGROUND OF THE INVENTION [0002]

[0001] Embodiments of the present disclosure relate to a deposition apparatus for depositing material on a substrate and a method for depositing material on the substrate. Embodiments of the present disclosure particularly relate to a sputtering apparatus for depositing layer stacks on a substrate and a method for depositing layer stacks on a substrate.

[0002] Touch panels, such as touch screen panels, are a particular class of electronic visual displays that can detect and locate touches within a display area. The touch panels include layer stacks or transparent bodies and, consequently, generate a functional screen (such as a touch screen panel). However, poor sunlight readability, a colored appearance of the touch panel (reflectance), a color change to a picture resulting from the underlying display, and a structured core layer of a functional screen For example, a patterned transparent conductive oxide (TCO), is often obtained.

[0003] Different layer stack concepts are used in the fabrication of touch panels. These layer stack concepts include, for example, a layer stack having an antireflective coating and then a metal layer stack, such as (e.g., Black Metal Bridges or black metal meshes Black Metal Meshes). ≪ / RTI > The layer stack concept also includes a layer stack having, for example, transparent insulating layers and a patterned TCO layer, for example, a patterned indium tin oxide (ITO) layer, whereby the patterned TCO layer is provided to the user ("Invisible TCO" or "invisible (i-) ITO").

[0004] Manufacturers of touch panels have a wide and changing portfolio of products with the need to adapt quickly to fast paced technical developments. The easy and rapid adaptation of the manufacturing equipment to different products, such as the exemplary different layer stacks above, is one aspect. As an example, for touch panel fabrication, rapid tool translation from a layer stack with an invisible TCO to a metal layer stack, such as a black metal layer stack, is beneficial. However, many process steps in, for example, the in-line manufacturing tool have space consuming gas separation units between adjacent process units, and, for example, a layer stack with invisible TCO , And metal layer stacks, such as black metal layer stacks, individual deposition devices are often used.

[0005] In view of the above, there is a need for a deposition apparatus for depositing material on a substrate, and a method for depositing material on the substrate, which overcomes at least some of the problems of the prior art.

[0006] In view of the above, there is provided a deposition apparatus for depositing a material on a substrate, and a method for depositing a material on the substrate. Further aspects, advantages and features of the present disclosure are apparent from the claims, the description and the accompanying drawings.

[0007] According to one aspect of the disclosure, there is provided a deposition apparatus for depositing a material on a substrate. The deposition apparatus includes two or more processing chambers including a first processing chamber and a second processing chamber; A substrate support extending through at least the first processing chamber and the second processing chamber; And two or more deposition source assemblies including a first deposition source assembly in a first processing chamber and a second deposition source assembly in a second processing chamber. Each of the two or more deposition source assemblies includes at least one first deposition source and at least one deposition source support configured to support at least one process device. The at least one deposition source supporter is configured to be movable between at least a first position and a second position. In a first position, at least one first deposition source is oriented toward the substrate support, and in a second position, at least one process device is oriented toward the substrate support.

[0008] According to another aspect of the present disclosure, a method for depositing a material on a substrate is provided. The method includes: depositing a first layer stack on a first substrate by a first deposition source assembly and a second deposition source assembly; Moving at least one of a first deposition source assembly and a second deposition source assembly from a first position to a second position; And depositing a second layer stack on a second substrate.

[0009] According to yet another aspect of the present disclosure, there is provided a deposition apparatus for depositing a first layer stack on a first substrate and a second layer stack on a second substrate, wherein the second layer stack is different from the first layer stack. The deposition apparatus includes two or more processing chambers including a first processing chamber and a second processing chamber; A substrate support extending through at least the first processing chamber and the second processing chamber; And two or more deposition source assemblies including a first deposition source assembly in a first processing chamber and a second deposition source assembly in a second processing chamber. Wherein each of the two or more deposition source assemblies comprises at least one first deposition source and at least one deposition source support configured to support at least one process device, wherein the at least one process device comprises at least one second deposition A source, a heating device, and a deposition source conditioning device; And a separation wall configured to separate the at least one first deposition source from the at least one process device. The at least one deposition source supporter is configured to be movable between at least a first position and a second position. In a first position, at least one first deposition source is oriented toward the substrate support, and in a second position, at least one process device is oriented toward the substrate support.

[0010] Embodiments also relate to devices for performing the disclosed methods, and include device portions for performing each of the described method steps. These method steps may be performed by hardware components, by a computer programmed by appropriate software, by any combination of the two, or in any other manner. In addition, embodiments in accordance with the present disclosure also relate to methods of operating the described apparatus. The method includes method steps for performing all of the respective functions of the apparatus.

[0011] In the manner in which the recited features of the present disclosure can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments. BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings relate to embodiments of the present disclosure and are described below.
Figure 1 shows a schematic view of a deposition apparatus for depositing a material on a substrate.
Figure 2 shows a schematic view of another deposition apparatus for depositing material on a substrate.
Figure 3 shows a schematic view of a deposition apparatus for depositing material on a substrate, according to embodiments described herein.
Figure 4 shows a schematic view of another deposition apparatus for depositing material on a substrate, in accordance with the embodiments described herein.
Figure 5 shows a schematic view of another deposition apparatus for depositing material on a substrate, according to embodiments described herein.
Figure 6 shows a flow diagram of a method for depositing material on a substrate, in accordance with embodiments described herein.

[0012] Reference will now be made in detail to the various embodiments of the present disclosure, and examples of one or more of the various embodiments are illustrated in the drawings. In the following description of the drawings, like reference numerals refer to like components. In general, only differences for the individual embodiments are described. Each example is provided as an illustration of the present disclosure and is not intended as a limitation of the present disclosure. Additionally, features that are illustrated or described as part of one embodiment may be used with other embodiments or with other embodiments to produce yet another embodiment. The description is intended to include such variations and modifications.

[0013] Manufacturers of touch panels have broad and changing product portfolios with the need to adapt quickly to rapid technological advancement. The easy and rapid adaptation of the manufacturing equipment to different products, such as different layer stacks, is one aspect. As an example, for touch panel fabrication, rapid tool translation from invisible TCO stacks to metal stacks, such as black metal bridges or black metal stacks for black metal meshes, is required.

[0014] The present disclosure provides a deposition apparatus for depositing material on a substrate. The deposition apparatus includes two or more processing chambers including a first processing chamber and a second processing chamber; A substrate support extending through at least the first processing chamber and the second processing chamber; And two or more deposition source assemblies including a first deposition source assembly in a first processing chamber and a second deposition source assembly in a second processing chamber. Each of the two or more deposition source assemblies includes at least one first deposition source and at least one deposition source support configured to support at least one process device. The at least one deposition source supporter is configured to be movable between at least a first position and a second position. In a first position, at least one first deposition source is oriented toward the substrate support, and in a second position, at least one process device is oriented toward the substrate support.

[0015] According to some embodiments, the present disclosure provides a deposition apparatus configured as a flip source type equipment configuration having deposition sources (e.g., deposition units), which includes a processing chamber (S)) / deposition material (s) (e.g., cathode (s) / cathode material (s)) in the deposition source (s) One in-line system can provide two or more layer stacks (i.e., stack concepts) with different materials, with or without the need for venting, with or without reduced venting. In some implementations, for example, in the case of touch panels, the system may be fabricated from one configuration that provides a three-layer stack for fabricating ITO with pattern invisibility ("invisible ITO"), May be flipped to another configuration that provides a subsequent metal stack, such as a "black metal" -stack. These metal stacks include low-reflectivity, invisible "black metal bridges" (out-of-cell touch screen panels (OGS) ) ≪ / RTI > concepts) and contact-out metal leads for on-cell type TSP metal mesh based touchscreen panel approaches.

[0016] The deposition source assembly (e.g., a flip unit) may provide at least one first deposition source assembly (e.g., a cathode (s) source unit) on one side, , A process device, such as at least one second deposition source assembly (e.g., another cathode (s) source unit) or other functional units such as gas separation, heating, conditioning or combinations thereof.

[0017] The term "substrate " as used herein will encompass substrates that can be used in the manufacture of displays, such as glass or plastic substrates. For example, the substrates as used herein will encompass substrates that can be used for a liquid crystal display (LCD), a plasma display panel (PDP), and the like. Unless expressly specified otherwise in the description, the term "substrate" should be understood as a "large area substrate" as specified herein.

[0018] According to some embodiments, large area substrates or respective carriers (carriers having one or more substrates) may have a size of at least 0.67 m ² . Typically, the size is about 0.67 m ² (0.73 x 0.92 m - Gen 4.5) to about 8 m ² , more typically about 2 m ² To about 9 m ² Or even up to 12 m ² . Typically, the substrates or carriers on which structures and methods according to embodiments described herein are provided are large area substrates as described herein. For example, a large area substrate or carrier may have GEN 4.5 corresponding to about 0.67 m ² substrates (0.73 x 0.92 m), GEN 5 corresponding to about 1.4 m ² substrates (1.1 m x 1.3 m), about 4.29 m GEN 8.5 corresponding to ² substrates (1.95 m x 2.2 m), GEN 8.5 corresponding to about 5.7 m ² substrates (2.2 m x 2.5 m), or even about 8.7 m ² substrates (2.85 m x 3.05 m ). ≪ / RTI > Much larger generations, such as GEN 11 and GEN 12, and corresponding substrate areas can similarly be implemented.

[0019] The term "substrate" as used herein will also encompass flexible substrates, such as a web or foil.

[0020] As used herein, the term "transparent" will in particular include the ability of the structure to transmit light with relatively low scattering, and thus, for example, The resulting light can be viewed in a substantially clear manner.

[0021] According to some embodiments, the layer stack is constituted by a plurality of layers or films that are formed on top of each other (e.g., by deposition) or on top of each other (one atop or over). In particular, embodiments herein include depositing a layer stack that may include at least one of a metal layer, a transparent insulating layer, and / or a transparent conductive oxide layer, such as an ITO layer. When referring to the term "over ", that is to say that one layer is on another layer, starting from the substrate, a first layer is deposited on the substrate and an additional layer deposited after the first layer is deposited thereon Is understood to be on the first layer and on the substrate. In other words, the term "over" is used to define the order of layers, layer stacks, and / or films, and the starting point is the substrate.

[0022] According to some embodiments that may be combined with other embodiments described herein, a deposition apparatus is configured to deposit at least a first layer stack and a second layer stack, And is different from the first layer stack. The first layer stack and the second layer stack may comprise different materials or layers of material. In the exemplary embodiments, the deposition apparatus is made of indium tin oxide (ITO) and Nb _y O _x , Nb ₂ O ₅ , SiO ₂ , TiO ₂ And / or a first layer stack comprising a metal, in particular at least one of Al, Mo and Cu, and / or the deposition apparatus is configured to deposit MoNbO _x N _y , Al, AlNd and MoNb, And a second layer stack comprising at least one of the alloys. The present disclosure provides a deposition apparatus configured as, for example, one in-line system that can provide two or more stack concepts with different materials.

[0023] Figure 1 shows a schematic view of a deposition apparatus 100 for depositing material on a substrate. Deposition apparatus 100 may include a first metal layer stack, such as a metal layer stack, such as a first metal layer (for example, for black metal bridges or black metal meshes), a black metal stack, and optionally a first layer of indium tin oxide Layer stack. ≪ RTI ID = 0.0 >

[0024] Illustratively, in Figure 1, the deposition apparatus 100 includes a first portion 110 for deposition of one or more metal layers and a second portion 120 for deposition of at least one ITO layer do. The first portion 110 and the second portion 120 may be separated by a separation wall 170. The first portion 110 includes a plurality of first vacuum chambers such as a first entry load lock chamber 111, a first processing chamber 112 and a first exit load lock chamber 113 . Similarly, the second portion 120 includes a plurality of second vacuum chambers, such as a second inlet load lock chamber 121, a second processing chamber 122, and a second outlet load lock chamber 123. The first vacuum chambers and the second vacuum chambers can be separated from the adjacent first vacuum chambers and the second vacuum chambers, respectively, by the separation devices 160. [

[0025] The atmosphere in one or more vacuum chambers of the first vacuum chambers and / or the second vacuum chambers may be, for example, at least a part of the first vacuum chambers and the second vacuum chambers And can be controlled individually by generating a technical vacuum by the connected vacuum pumps 150. As an example, the atmosphere can be controlled individually by inserting process gases into the deposition zones in the first processing chamber 112 and / or the second processing chamber 122 and / or by generating a technological vacuum.

[0026] For example, a first substrate support 130 configured to carry or carry a first carrier on which a substrate or substrate is disposed extends through the first portion 110, and a substrate or substrate, for example, A second substrate support 140 configured to carry or carry a second carrier disposed thereon extends through the second portion 120. The direction of transport of the substrate (not shown) through the first portion 110 and the second portion 120 is indicated by arrows 131.

[0027] At least one first deposition source 116, at least one second deposition source 117, at least one third deposition source 118 and at least one fourth deposition source 119 are disposed in the first processing chamber 112 ). ≪ / RTI > At least one first deposition source 116, at least one second deposition source 117, at least one third deposition source 118 and at least one fourth deposition source 119 may be, for example, black A metal bridge or a black metal mesh. As an example, at least one first deposition source 116 may include an MF twin MoNb rotary cathode and at least one second deposition source 117 may comprise a DC MoNb rotary cathode. And at least one third deposition source 118 may comprise a DC Al rotational cathode and at least one fourth deposition source 119 may comprise a DC MoNb rotating cathode.

[0028] A gas separation shielding 114 may be provided, for example, between at least one first deposition source 116 and at least one second deposition source 117. The gas separation shield 114 may have at least one opening 115 to allow pumping therethrough.

[0029] At least one fifth deposition source 124 and at least one sixth deposition source 125 are provided in the second processing chamber 122. At least one fifth deposition source 124 and at least one sixth deposition source 125 may be configured for deposition of at least one ITO layer. At least one of the at least one fifth deposition source 124 and at least one sixth deposition source 125 may comprise a DC ITO rotary cathode.

[0030] The deposition apparatus 100 may be formed of, for example, MoNbO _x N _y And Al, and may be configured for deposition of at least one ITO layer. The substrate to be processed may be inserted into the first processing chamber 112 through the first inlet load lock chamber 111 to deposit a metal layer stack. For example, MoNbO _x N _y And Al are deposited on the substrate and the substrate exits the deposition apparatus 100 through the first outlet load lock chamber 113. [ Thereafter, in order to deposit at least one ITO layer, for example, the processed MoNbO _x N _y And a substrate having metal layers thereon are inserted into the second processing chamber 122 through the second inlet load lock chamber 121. At least one ITO layer is deposited on the substrate, and the processed MoNbO _x N _y And a substrate having at least one ITO layer thereon, exits the deposition apparatus 100 through a second outlet load lock chamber 123. The metal layer stack includes a metal layer stack,

[0031] Figure 2 illustrates a method of depositing a second layer stack including, for example, one or more transparent insulating layers and at least one (patterned) TCO layer, for example an indium tin oxide (ITO) layer, (&Quot; invisible TCO "or" invisible (i-) ITO ") with respect to the user (patterned) TCO layer.

[0032] 2, the deposition apparatus 200 includes a first portion 210 for depositing one or more transparent insulating layers and a second portion 220 for depositing at least one ITO layer . The first portion 210 and the second portion 220 may be separated by a separating wall 270. The first portion 210 includes a plurality of first vacuum chambers, such as an inlet load lock chamber 211 and a first processing chamber 212. The second portion 220 includes a plurality of second vacuum chambers, such as a second processing chamber 222 and an exit load lock chamber 221. The first vacuum chambers and the second vacuum chambers can be separated from the adjacent first vacuum chambers and second vacuum chambers, respectively, by the separation devices 260.

[0033] The deposition apparatus 200 may include one or more additional vacuum chambers, such as a transfer chamber 240. The transfer chamber 240 may connect the first portion 210 and the second portion 220. The transfer chamber 240 is configured to transfer a substrate from a first portion 210, particularly a first processing chamber 212, into a second portion 220, particularly a second processing chamber 222, Means.

[0034] The atmosphere in at least one of the first vacuum chambers, the second vacuum chambers and the further vacuum chambers, such as the transfer chamber 240, may be, for example, the first vacuum chambers, the second vacuum chambers, Can be individually controlled by generating a technical vacuum by vacuum pumps 250 connected to one or more of the vacuum chambers, such as the transfer chamber 240. As an example, the atmosphere can be controlled individually by inserting process gases into the deposition zones in the first processing chamber 212 and / or the second processing chamber 222 and / or by generating a technical vacuum.

[0035] For example, a first substrate support 230, configured to carry or carry a substrate or a first carrier over which the substrate is disposed, extends through the first portion 210. For example, a second substrate support 280 configured to carry or carry a substrate or a second carrier over which the substrate is disposed extends through the second portion 220. The transport direction of the substrate through the first portion 210 is indicated by the arrow 231 and the transport direction of the substrate through the second portion 220 is indicated by the arrow 232. In the transfer chamber 240, the substrate may be transferred from the first substrate support 230 to the second substrate support 280.

[0036] At least one first deposition source 216, at least one second deposition source 217, and at least one third deposition source 218 may be provided in the first processing chamber 212. At least one first deposition source 216, at least one second deposition source 217, and at least one third deposition source 218 may be configured to deposit one or more transparent insulating layers. As an example, at least one first deposition source 216 may comprise a MF Nb ₂ O ₅ rotary cathode pair and at least one second deposition source 217 may comprise a MF SiO ₂ rotary cathode pair It may include, and, and at least one third deposition source 218 is also MF SiO ₂ And may include a rotating cathode pair.

[0037] A gas separation shield 214 may be provided, for example, between at least one first deposition source 216 and at least one second deposition source 217. The gas separation shield 214 may have at least one opening 215 to allow pumping therethrough.

[0038] At least one fourth deposition source 224 and at least one fifth deposition source 225 are provided in the second processing chamber 222. At least one fourth deposition source 224 and at least one fifth deposition source 225 may be configured to deposit at least one ITO layer. At least one of the at least one fourth deposition source 224 and at least one fifth deposition source 225 may be configured for the deposition of ITO and may include, for example, a DC ITO spin-on cathode.

The deposition apparatus 200 includes transparent insulating layers, such as Nb ₂ O ₅ And SiO ₂ Layers, and a second layer stack comprising at least one ITO layer. To deposit the second layer stack, the substrate to be processed may be inserted into the first processing chamber 212 through the inlet load lock chamber 211. [ Transparent insulating layers, such as Nb ₂ O ₅ and SiO ₂ Layers are deposited on the substrate and the substrate enters the transfer chamber 240 and the transfer chamber 240 transfers the substrate from the first substrate support 230 to the second substrate support 280. Thereafter, in order to deposit at least one ITO layer, the processed transparent insulating layers, such as Nb ₂ O ₅ And SiO ₂ A substrate having layers thereon is inserted into the second processing chamber 222 from the transfer chamber 240. At least one ITO layer is deposited over the substrate and the processed, transparent insulating layers, such as Nb ₂ O ₅ And SiO ₂ A substrate having on it a layer stack comprising layers and at least one ITO layer exits the deposition apparatus 200 through an exit load lock chamber 221.

[0040] Figure 3 shows a schematic view of a deposition apparatus 300 for depositing material on a substrate 340, according to embodiments described herein. According to some embodiments, the deposition apparatus 300 is configured to deposit two or more different layer stacks, for example, a first layer stack and a second layer stack with different materials.

[0041] The deposition apparatus 300 includes two or more processing chambers including a first processing chamber 310 and a second processing chamber 320; A substrate support 330 extending through at least the first processing chamber 310 and the second processing chamber 320; And two or more deposition source assemblies including a first deposition source assembly 350 in a first processing chamber 310 and a second deposition source assembly 360 in a second processing chamber 320. Each of the two or more deposition source assemblies includes at least one first deposition source and at least one deposition source support configured to support at least one process device. The at least one deposition source supporter is configured to be movable between at least a first position and a second position. In a first position, at least one first deposition source is oriented toward the substrate support 330, and in a second position, at least one process device is oriented toward the substrate support 330. [ Two or more of the processing chambers may be vacuum processing chambers.

[0042] According to some implementations, the substrate support 330 may include a carrier 340 having a substrate 340 or a substrate 340 disposed thereon into the first processing chamber 310 and / or the second processing chamber 320, And rollers for conveying through and through such processing chambers. As an example, the first processing chamber 310 and the second processing chamber 320 may be separated by a separation device 370. The separation device 370 may include, for example, a valve 371 having a valve housing and a valve unit. The separation device 370 and particularly the valve 371 may be configured as a load lock between the first processing chamber 310 and the second processing chamber 320. The substrate support 330 may be configured to transport the substrate 340 from the first processing chamber 310 into the second processing chamber 320 via the separation device 370 and / And into the first processing chamber 310 from the first processing chamber 320.

[0043] In some embodiments, the at least one process device includes at least one of at least one second deposition source, a heating device, and a deposition source conditioning device. In Figure 3, the first deposition source assembly 350 includes a deposition source support, e.g., a first deposition source support 351, at least one first deposition source, such as a first deposition source pair 352, And one process device, such as a second deposition source pair 353. The second deposition source assembly 360 includes a deposition source support, e.g., a second deposition source support 361, at least one first deposition source, such as a first single deposition source 362, , Such as a third deposition source pair 363.

[0044] According to some embodiments that may be combined with other embodiments described herein, the at least one deposition source support may include at least one first deposition source having a first deposition material, and at least one deposition source having a second deposition material, Wherein the first deposition material and the second deposition material are configured to support at least one process device including a second deposition source, wherein the first deposition material and the second deposition material are different.

[0045] 3, the first deposition source supporter 351 of the first deposition source assembly 350 is in the second position and the second deposition source pair 353 is oriented toward the substrate 340 or the substrate support 330. [ do. The second deposition source supporter 361 of the second deposition source assembly 360 is in the second position and the third deposition source pair 363 is oriented toward the substrate support 330. The second deposition material provided by the second deposition source pair 353 of the first deposition source assembly 350 may be deposited on the substrate 340 and the second deposition material provided by the first deposition source pair 352 The first deposition material is not deposited on the substrate 340. The fourth deposition material provided by the third deposition source pair 363 of the second deposition source assembly 360 may be deposited on the substrate 340 and the second deposition source 362 provided by the first deposition source 362 The third deposition material is not deposited on the substrate 340.

[0046] According to some embodiments that may be combined with other embodiments described herein, at least one deposition source support is configured to be rotatable about an axis of rotation of at least one deposition source support, And is substantially perpendicular to the transport direction. The transport direction of the substrate, for example the substrate 340, is indicated by the reference numeral 341. [ Changing the position of the at least one deposition source support from the first position to the second position or from the second position to the first position may comprise rotating the at least one deposition source support about 180 degrees.

[0047] In one example, the first deposition source supporter 351 of the first deposition source assembly 350 is configured to be rotatable about a first axis of rotation 355. Changing the position of the first deposition source supporter 351 from the first position to the second position or from the second position to the first position may include rotating the first deposition source supporter 351 about 180 degrees have. The second deposition source supporter 361 of the second deposition source assembly 360 is configured to be rotatable about the second rotation axis 365. Changing the position of the second deposition source supporter 361 from the first position to the second position or from the second position to the first position may include rotating the second deposition source supporter 361 about 180 degrees have.

[0048] According to some embodiments, which may be combined with other embodiments described herein, a deposition apparatus may include two or more of the orientations of the deposition source supports of each of two or more deposition source assemblies Lt; / RTI > A deposition apparatus that provides two or more configurations may be used to deposit deposition source (s) / deposition material (s) (e.g., cathode (s) / cathode material (s)) in a processing chamber ) To in situ so that a single in-line system can be used with two or more layer stacks with different materials (e.g., without the need for exhaustion, or even without venting) That is, stack concepts). The present disclosure is not limited to providing two configurations. Additional configurations for deposition of one or more additional layer stacks or layer stack concepts may be provided.

[0049] According to some embodiments that may be combined with other embodiments described herein, a deposition apparatus is configured to deposit at least a first layer stack and a second layer stack, It is different from the stack. The deposition apparatus may be configured to deposit a first layer stack in a first configuration of two or more deposition source assemblies and a second layer stack in a second configuration of two or more deposition source assemblies ≪ / RTI > The first configuration may include first orientations of each of the deposition source supports of the two or more deposition source assemblies. The second configuration may include the second orientations of the respective deposition source supports of the two or more deposition source assemblies. In the following, examples of the first configuration and the second configuration will be described. As a first example, at least one of the deposition source supports of the first deposition source assembly may be in the first position, and at least one of the deposition source supports of the second deposition source assembly may be in the first position. As a second example, at least one of the deposition source supports of the first deposition source assembly may be in the second position, and at least one of the deposition source supports of the second deposition source assembly may be in the second position. As a third example, at least one of the deposition source supports of the first deposition source assembly may be in the first position, and at least one of the deposition source supports of the second deposition source assembly may be in the second position. As a fourth example, at least one of the deposition source supports of the first deposition source assembly may be in the second position, and at least one of the deposition source supports of the second deposition source assembly may be in the first position.

[0050] According to some embodiments that may be combined with other embodiments described herein, at least one of the two or more deposition source assemblies includes a separation wall assembly. In some embodiments, at least one of the two or more deposition source assemblies includes two or more separation walls. The separation walls may include a first separation wall 354 of the first deposition source assembly 350 and a second separation wall 364 of the second deposition source assembly 360.

[0051] In some embodiments, the separation wall is configured to separate at least one first deposition source from at least one process device of the at least one deposition source assembly. According to embodiments, a separation wall is provided between at least one process device of at least one deposition source assembly and at least one first deposition source. As an example, a first separation wall 354 of the first deposition source assembly 350 may be provided between the first deposition source pair 352 and the second deposition source pair 353. A second separation wall 364 may be provided between the first single deposition source 362 and the third deposition source pair 363.

[0052] According to some embodiments that may be combined with other embodiments described herein, the separation walls may include at least one processing chamber of two or more processing chambers, where at least one deposition source assembly is provided. The first chamber portion and the second chamber portion. The first processing chamber 310 is connected to the first chamber portion 311 of the first processing chamber 310 and the second chamber portion 311 of the first processing chamber 310 312, respectively. The second separation wall 364 separates the second processing chamber 320 into a first chamber portion 321 of the second processing chamber 320 and a second chamber portion 322 of the second processing chamber 320 . ≪ / RTI >

[0053] In some embodiments, the first chamber portion 311 of the first processing chamber 310 and the first chamber portion 321 of the second processing chamber 320) and the second chamber portion 321 of the second processing chamber 320 (e.g., The chamber portion (e.g., the second chamber portion 312 of the first processing chamber 310 and the second chamber portion 322 of the second processing chamber 320) may be configured to provide different partial pressures and / / RTI > and / or gases (e. G., Process gases). According to some embodiments, the first chamber portion includes a substrate support, and the second chamber portion is configured such that, for example, at least one first deposition source or at least one process device is not oriented toward the substrate support , A storage portion for storing at least one such first deposition source or at least one process device. In one example, in the first position, at least one first deposition source is positioned in the first chamber portion and at least one process device is in the second chamber portion, and in the second position, at least one process device At least one first deposition source is positioned in the first chamber portion and at least one first deposition source is positioned in the second chamber portion. The second chamber portion may be a storage portion.

[0054] According to some embodiments that may be combined with other embodiments described herein, the second chamber portion may have a vacuum lock or a door. The vacuum lock or door may be opened, for example, for maintenance, repair or exchange of at least one process device or at least one first deposition source that is positioned in the second processing chamber . In some embodiments, opening a vacuum lock or door for maintenance, repair, or replacement of at least one first deposition source or at least one process device may be accomplished during the deposition process because positioning in the first chamber portion The at least one process device or at least one first deposition source that is positioned in the second chamber portion is inactive or not used while the at least one first deposition source or at least one process device being activated can be operated, Because. This reduces the down time of the deposition apparatus, for example, for maintenance, repair or replacement of at least one first deposition source or at least one process device.

[0055] In some implementations, two or more deposition source assemblies may be used to flip deposition sources, such as the cathode (s), and to remove (e.g., remove and reposition ) On the tracks) to facilitate installation. Illustratively, two or more deposition source assemblies have the ability to remove deposition sources that are not currently in use, with or without the need for reduced evacuation of the processing chamber of the deposition apparatus or deposition apparatus (E.g., the deposition source or process devices in the second chamber portion (e.g., the external / additional cathode (s)) within the designated processing chamber ) And deposition sources or process devices (e.g., internal cathodes (s)) in the first chamber portion may be provided to the deposition apparatus.

[0056] According to some embodiments that may be combined with other embodiments described herein, the separation wall is configured to hermetically seal the first chamber portion from the second chamber portion. In some embodiments, the separation wall is configured as a gas separation shield. The first chamber portion and the second chamber portion may be portions having different partial pressures and / or types of gases (such as process gases). Process gases include inert gases such as argon and / or reactive gases such as oxygen, nitrogen, hydrogen (H ₂ ) and ammonia (NH ₃ ), ozone (O ₃ ), activated gases, can do.

[0057] The term "hermetically " as used herein refers to substantially airtight sealing. The sealing may not pass gases, such as process gases. The first separation wall 354 is configured to seal and seal the first chamber portion 311 of the first processing chamber 310 from the second chamber portion 312 of the first processing chamber 310 do. The second separation wall 364 may be configured to seal and seal the first chamber portion 321 of the second processing chamber 320 from the second chamber portion 322 of the second processing chamber 320. [

[0058] Figure 4 shows a schematic view of another deposition apparatus 400 for depositing material on a substrate 340, in accordance with the embodiments described herein. According to some embodiments, the deposition apparatus 400 is configured to deposit a first layer stack and a second layer stack with two or more different layer stacks, e.g., different materials.

[0059] The difference between the deposition apparatus 300 of FIG. 3 and the deposition apparatus 400 of FIG. 4 is in the configuration of the first deposition source assembly in the first processing chamber and the second deposition source assembly in the second processing chamber. The description of the features described above with respect to FIG. 3 also applies to the corresponding features of the embodiment shown in FIG. 4, and the description is not repeated.

[0060] In some embodiments, the at least one process device includes at least one of at least one second deposition source, a heating device, and a deposition source conditioning device. In Figure 4, the first deposition source assembly 450 includes a deposition source support, e.g., a first deposition source support 351, at least one first deposition source, such as a first single deposition source 452, And one process device, such as a first deposition source pair 453. The second deposition source assembly 460 includes a deposition source support, for example a second deposition source support 361, at least one first deposition source, such as a second single deposition source 462, Such as a heating device and / or a deposition source conditioning device.

[0061] Although the first processing chamber and the second processing chamber are shown in Figures 3 and 4, this disclosure is not limited to providing two processing chambers. According to some embodiments that may be combined with other embodiments described herein, two or more processing chambers may include one or more additional processing chambers, and at least one additional deposition source assembly Is provided in at least one of the one or more additional processing chambers. As an example, any number of processing chambers may be provided, for example at least three, in particular at least ten, processing chambers.

[0062] According to some embodiments that may be combined with other embodiments described herein, a deposition apparatus may include a controller configured to control movement or rotation of at least one deposition source support between a first position and a second position . When the device provides two or more configurations of the orientations of the respective deposition source supports of two or more deposition source assemblies, the controller may be configured to change between two or more configurations . As an example, the controller may be configured to change between a first configuration for depositing a first layer stack and a second configuration for depositing a second layer stack. The present disclosure is not limited to providing two configurations. Additional configurations for depositing one or more additional layer stacks or layer stack concepts may be provided.

[0063] A deposition apparatus that provides two or more configurations may be used to deposit deposition source (s) / deposition material (s) (e.g., cathode (s) / cathode material (s)) in a processing chamber ) To in situ so that a single in-line system can be used with two or more layer stacks with different materials (e.g., without the need for exhaustion, or even without venting) That is, stack concepts).

[0064] Figure 5 shows a schematic view of another deposition apparatus 500 for depositing material on a substrate, according to embodiments described herein. According to some embodiments, the deposition apparatus 500 is configured to deposit a first layer stack and a second layer stack with two or more different layer stacks, e.g., different materials.

[0065] In Figure 5, the deposition apparatus 500 may include, for example, one or more transparent insulating layers and at least one transparent conductive oxide (TCO) layer, for example, an indium tin oxide (ITO) "Invisible ITO"). ≪ / RTI > According to some embodiments, at least one TCO layer may be a structured TCO layer and may be provided by, for example, depositing a TCO layer and patterning the TCO layer to provide a structured TCO layer . Alternatively, a mask and / or photoresist may be provided to deposit the structured TCO layer.

[0066] According to some embodiments that may be combined with other embodiments described herein, the at least one TCO layer may comprise an indium tin oxide (ITO) layer, a doped ITO layer, an impurity-doped ZnO, In ₂ O _3, SnO ₂ and _{CdO, ITO (In 2 O 3} : Sn), AZO (ZnO: Al), IZO (ZnO: In), GZO (ZnO: Ga), or ZnO, In ₂ O _3, SnZnO and SnO ₂ , or multi-component oxides comprising these combinations, or combinations thereof. In the following, reference is made to ITO as an example for at least one TCO layer.

[0067] 5, deposition apparatus 500 includes a first portion 510 for depositing one or more transparent insulating layers of a first layer stack, and a second portion 510 for depositing at least one ITO layer And a second portion 540. The first portion 510 and the second portion 540 may be separated by a separating wall 520. The first portion 510 comprises a plurality of first vacuum chambers and the second portion 540 comprises a plurality of second vacuum chambers. According to some implementations, the first vacuum chambers and the second vacuum chambers may be separated from adjacent first vacuum chambers and second vacuum chambers, respectively, by separation devices 590. [ As an example, the separation device 590 may include a valve having a valve housing and a valve unit. The separation device 590 may be configured as a load lock between adjacent first vacuum chambers and adjacent second vacuum chambers.

[0068] According to some embodiments that may be combined with other embodiments described herein, the first vacuum chambers and the second vacuum chambers may include: a buffer chamber, a heating chamber, a transfer chamber, a cycle- time-adjusting chambers, deposition chambers, processing chambers, and the like. According to embodiments that may be combined with other embodiments described herein, a "processing chamber" may be understood as a chamber in which a processing device for processing a substrate is arranged. The processing device may be understood as any device used to process a substrate. For example, the processing device may include a deposition source for depositing a layer on a substrate. Thus, for example, a processing chamber or vacuum chamber comprising a deposition source assembly may also be referred to as a deposition chamber. The processing chamber may be a chemical vapor deposition (CVD) chamber or a physical vapor deposition (PVD) chamber. According to some embodiments that may be combined with other embodiments described herein, two or more of the processing chambers may be vacuum processing chambers.

[0069] The vacuum chambers of at least some of the first vacuum chambers and the second vacuum chambers may be configured as processing chambers. As an example, each of the first vacuum chambers and at least some of the second vacuum chambers, which are configured as processing chambers, may each include at least one deposition source assembly. The at least one deposition source assembly may include at least one deposition source, such as a first deposition source and / or a second deposition source. The deposition sources may, for example, be rotatable cathodes with targets of material to be deposited on the substrate. The cathodes may be rotatable cathodes having a magnetron therein. As an example, magnetron sputtering may be performed to deposit layers of layer stacks, e.g., layers of a first layer stack and a second layer stack. In one example, the cathodes are connected to an AC power supply (not shown), so that the cathodes can be biased in an alternating manner.

[0070] As used herein, "magnetron sputtering " refers to sputtering performed using a magnet assembly, i.e., a unit capable of generating a magnetic field. As an example, such a magnet assembly consists of a permanent magnet. This permanent magnet may be coupled to a planar target or arranged in a rotatable target in such a way that free electrons are trapped within the magnetic field generated below the rotatable target surface. Such a magnet assembly may also be arranged to couple to a planar cathode.

[0071] Magnetron sputtering can be accomplished by a pair of deposition sources such as a double magnetron cathode, i.e., but not limited to, a TwinMag (TM) cathode assembly. In particular, for MF sputtering from, for example, a silicon target, target assemblies including double cathodes can be applied. According to some embodiments, the deposition sources in the processing chamber may be exchangeable. Thus, the deposition sources or targets are changed after the material is consumed.

[0072] According to some embodiments, the layers, such as transparent insulating layers, can be deposited by sputtering of rotatable cathodes with an AC power supply, for example by magnetron sputtering. As an example, in order to deposit transparent insulating layers, MF sputtering may be applied. According to some embodiments, sputtering from a silicon target, such as a sprayed silicon target, is performed by MF sputtering, which is intermediate frequency sputtering. According to the embodiments herein, the intermediate frequency is a frequency in the range of 5 kHz to 100 kHz, for example 10 kHz to 50 kHz.

[0073] Sputtering from a target to a transparent conductive oxide film, such as ITO, can be performed as DC sputtering. Along with the anodes (not shown) collecting electrons during sputtering, each of the deposition sources is connected to a DC power supply (not shown). According to embodiments that may be combined with other embodiments described herein, transparent conductive oxide layers, e.g., ITO layers, may be sputtered by DC sputtering.

[0074] The first processing chamber 513, the third processing chamber 514, the second processing chamber 513, the second processing chamber 513, the third processing chamber 514, and the third processing chamber 514. In some embodiments, the first vacuum chambers of the first portion 510 include an inlet load lock chamber 511, a first processing chamber 512, A fourth processing chamber 515, and a fifth processing chamber 516, as shown in FIG. The second processing chamber 542, the eighth processing chamber 543, the ninth processing chamber 544, the sixth processing chamber 542, the seventh processing chamber 542, the seventh processing chamber 542, A tenth processing chamber 545, and an exit load lock chamber 546. In one embodiment,

[0075] The deposition apparatus 500 may include additional vacuum chambers, such as a transfer chamber 530 connecting the first portion 510 and the second portion 540. The transfer chamber 530 is configured to transfer a substrate from a first portion 510, in particular a fifth processing chamber 516, into a second portion 540, particularly a sixth processing chamber 541, Means. The substrate transport means may comprise means for turning or rotating the substrate.

The atmosphere in one or more of the vacuum chambers, the second vacuum chambers, and / or the additional vacuum chambers, such as the transfer chamber 530, may be, for example, (Not shown) connected to one or more of the vacuum chambers, the second vacuum chambers, and the additional vacuum chambers, such as the transfer chamber 530, as shown in FIG. As an example, the atmosphere may be selected from among the inlet load lock chamber 511, the processing chambers 512-516 and 541-545, additional vacuum chambers such as the transfer chamber 530, and the exit load lock chamber 546 By injecting process gases into the deposition regions of at least one of the processing chambers 512-516 and 541-545, for example, by generating a technological vacuum within at least one of the processing chambers 512-516 and 541-545 and / . The process gas may include inert gases such as argon and / or reactive gases such as oxygen, nitrogen, hydrogen (H ₂ ) and ammonia (NH ₃ ), ozone (O ₃ ), active gases,

[0077] For example, a first substrate support 560 configured to support and carry or carry a first carrier on which a substrate or substrate is disposed may extend through the first portion 510, and may be, for example, Or a second substrate support 561 configured to support and carry or carry a second carrier over which the substrate is disposed extends through the second portion 540. [ The transport direction of the substrate (not shown) through the first portion 510 is indicated by arrow 562 and the transport direction of the substrate (not shown) through the second portion 540 is indicated by arrow 563 Is displayed. In the transfer chamber 530, the substrate may be transferred from the first substrate support 560 to the second substrate support 561. The first substrate support 560 and the second substrate support 561 may be connected in the transfer chamber 530, for example, by a substrate transfer means.

Within the first portion 510, at least one first deposition source assembly 570 may be provided in the first processing chamber 512. The first deposition source assembly 570 may be configured as any of the deposition source assemblies described above with reference to Figures 3 and 4. [ The first deposition source assembly 570 may include a deposition source support 587, a separation wall 588, a pair of NbOx deposition source 576 and a first pair of MoNb deposition sources 577. The NbOx deposition source pair 576 is oriented toward the first substrate support 560, for example, to deposit a Nb ₂ O ₅ layer on the substrate, and the first pair of MoNb deposition sources 577 are aligned For example, in the second chamber portion of the first processing chamber 512, in an inactive or stored position.

[0079] At least one second deposition source assembly 571 may be provided in the fourth processing chamber 515. The second deposition source assembly 571 may be configured as any of the deposition source assemblies described above with respect to Figures 3 and 4. The second deposition source assembly 571 may include a deposition source support 587, a separation wall 588, a first pair of Si deposition sources 578 and a second pair of MoNb deposition sources 579. Claim 1 Si deposition source pairs 578, for example, SiO ₂ on the substrate And the second pair of MoNb deposition sources 579 are oriented in a second chamber portion of the fourth processing chamber 515, for example, to an inactive or < RTI ID = 0.0 > It is in storage position.

[0080] At least one third deposition source assembly 572 may be provided in the fifth processing chamber 516. The third deposition source assembly 572 may be configured as any of the deposition source assemblies described above with reference to Figures 3 and 4. The third deposition source assembly 572 may include a deposition source support 587, a separation wall 588, and a second Si deposition source pair 580. Claim 2 Si deposition source pairs 580, for example, SiO ₂ on the substrate And is oriented toward the first substrate support 560 to deposit the layer.

[0081] Within the first portion 510, each of the second processing chamber 513 and the third processing chamber 514 may have a gas separation shield. The gas separation shield may have a slit opening to allow passage of the substrate therethrough.

[0082] Within the second portion 540, at least one fourth deposition source assembly 573 may be provided in the eighth processing chamber 543. The fourth deposition source assembly 573 may be configured as any of the deposition source assemblies described above with reference to Figures 3 and 4. The fourth deposition source assembly 573 includes a deposition source support 587, a separation wall 588, a process device 581, such as a heating device and / or a deposition source conditioning device, and an Al single deposition source 582 can do. The process device 581 is oriented toward the second substrate support 561, for example, to heat the layers deposited on the substrate and / or substrate, and the Al single deposition source 582 is aligned In the second chamber portion of the eighth processing chamber 543, in the inactive or storage position.

[0083] At least one fifth deposition source assembly 574 may be provided in the ninth processing chamber 544. The fifth deposition source assembly 574 may be configured as any of the deposition source assemblies described above with reference to Figures 3 and 4. [ The fifth deposition source assembly 574 may include a deposition source support 587, a separation wall 588, a first ITO deposition source pair 583, and an Al deposition source pair 584. The first ITO deposition source pair 583 is oriented toward the second substrate support 561 to deposit an ITO layer on the substrate, for example, and the Al deposition source pair 584 is oriented, for example, In the second chamber portion of the ninth processing chamber 544, in the inactive or storage position.

[0084] At least one sixth deposition source assembly 575 may be provided in the tenth processing chamber 545. The sixth deposition source assembly 575 may be configured as any of the deposition source assemblies described above with reference to Figures 3 and 4. [ The sixth deposition source assembly 575 may include a deposition source support 587, a separation wall 588, a second ITO deposition source pair 585, and a MoNb or Mo single deposition source 586. A second ITO deposition source pair 585 is oriented toward the second substrate support 561, for example, to deposit an ITO layer on the substrate, and a MoNb or Mo single deposition source 586 can be formed, for example, In the second chamber portion of the tenth processing chamber 545, in the inactive or storage position.

[0085] In this example, each of the sixth processing chamber 541 and the seventh processing chamber 542 does not include a deposition source assembly. However, the present disclosure is not so limited, and additional deposition source assemblies may be provided in the sixth processing chamber 541 and the seventh processing chamber 542 to achieve additional or different layer stack concepts. have.

[0086] In some embodiments, at least one pressure sensor (not shown) may be provided in at least one of the processing chambers 512-516 and 541-545. At least one pressure sensor may be configured to measure the (partial) pressure of the process gas. The at least one pressure sensor may in particular be an oxygen pressure sensor or a nitrogen pressure sensor. Some of the layers described herein may be oxide-layers, nitride-layers, oxynitride-layers, and may be deposited by a reactive deposition process in which the material is released from the target, The target material reacts with oxygen and / or nitrogen. By providing pressure sensors, an atmosphere with an appropriate processing gas and / or an appropriate degree of technical vacuum can be provided in each of the processing chambers, particularly in the deposition zones of each of the processing chambers.

[0087] According to some embodiments, process gases, inert gases, such as argon and / or reactive gases, such as oxygen, nitrogen, hydrogen (H ₂₎ and ammonia (NH _3), ozone (O _3), Active gases, and the like.

[0088] The deposition apparatus 500 having the first configuration shown in FIG. 5 includes transparent insulating layers, such as Nb ₂ O ₅ And SiO ₂ Layers, and at least one ITO layer. To deposit the first layer stack, the substrate to be processed can be inserted into the inlet load lock chamber 511, and transparent insulating layers, such as Nb ₂ O ₅ And SiO ₂ May be transported through the processing chambers 512-516 to deposit the layers. The substrate then enters the transfer chamber 530 and the transfer chamber 530 transfers the substrate from the first substrate support 560 to the second substrate support 561. Thereafter, in order to deposit at least one ITO layer, the processed transparent insulating layers, such as Nb ₂ O ₅ And SiO ₂ The substrate having the layers thereon is inserted into the second portion 540, particularly the sixth processing chamber 541. To deposit at least one ITO layer (and optionally at least one metal layer), the substrate is transported through the processing chambers 541-545. The processed, transparent insulating layers, such as Nb ₂ O ₅ And SiO ₂ A substrate having on it a first layer stack comprising layers, at least one ITO layer and optionally at least one metal layer exits the deposition apparatus 500 through an exit load lock chamber 546.

[0089] According to some embodiments, a first configuration for depositing a first layer stack as described above may include, for example, moving one or more of the deposition source supports of two or more deposition source assemblies To a second configuration for depositing a second layer stack. In the example of FIG. 5, the deposition source supports of each of the first through sixth deposition source assemblies may be rotated by about 180 degrees to change from the first configuration to the second configuration. A deposition apparatus 500 having a second configuration may be formed by depositing a metal layer stack, such as, for example, a black metal stack (e.g., for black metal bridges or black metal meshes) and optionally at least one TCO layer, Lt; RTI ID = 0.0 > (ITO) < / RTI >

[0090] To deposit a second layer stack, a substrate to be processed may be inserted into the inlet load lock chamber 511, and on the substrate, at least one first metal layer of the metal layer stack, such as at least one MoNbO _x N _y May be transported through the processing chambers 512-516 to deposit a layer. The substrate then enters the transfer chamber 530 and the transfer chamber 530 transfers the substrate from the first substrate support 560 to the second substrate support 561. Thereafter, the substrate having the at least one processed first metal layer thereon is inserted into the second portion 540, particularly the sixth processing chamber 541. In order to deposit at least one second metal layer of a metal layer stack, such as at least one Al layer and / or at least one AlNd layer, and at least one third metal layer of a metal layer stack, such as an Mo or MoNb layer, The substrate is transported through the processing chambers 541-545. The substrate having the processed second layer stack thereon exits the deposition apparatus 500 through the exit load lock chamber 546. [

[0091] According to yet another aspect of the present disclosure, there is provided a deposition apparatus for depositing a first layer stack on a first substrate and a second layer stack on a second substrate, wherein the second layer stack is different from the first layer stack. The deposition apparatus includes two or more processing chambers including a first processing chamber and a second processing chamber; A substrate support extending through at least the first processing chamber and the second processing chamber; And two or more deposition source assemblies including a first deposition source assembly in a first processing chamber and a second deposition source assembly in a second processing chamber. Wherein each of the two or more deposition source assemblies comprises at least one first deposition source and at least one deposition source support configured to support at least one process device, wherein the at least one process device comprises at least one second deposition A source, a heating device, and a deposition source conditioning device; And a separation wall configured to separate at least one first deposition source from the at least one process device. The at least one deposition source supporter is configured to be movable between at least a first position and a second position. In the first position, the first deposition source is oriented toward the substrate support, and in the second position, at least one process device is oriented toward the substrate support.

[0092] Figure 6 shows a flow diagram of a method 600 for depositing material on a substrate, according to embodiments described herein.

[0093] According to some embodiments, the method 600 includes depositing a first layer stack on a first substrate by a first deposition source assembly and a second deposition source assembly (block 610); Moving at least one of the first deposition source assembly and the second deposition source assembly from a first position to a second position (block 620); And depositing a second layer stack on a second substrate (block 630). The first layer stack and the second layer stack may comprise, at least in part, different materials.

[0094] According to some embodiments, each of the first deposition source assembly and the second deposition source assembly includes at least one first deposition source and at least one process device, wherein in the first position, And in the second position, at least one process device is oriented toward the substrate.

[0095] According to embodiments described herein, a method for depositing material on a substrate may be performed by computer programs, software, computer program products and interrelated controllers, , Memory, user interface, and input and output means for communicating with corresponding components of the device for processing large area substrates.

[0096] According to some embodiments, the present disclosure provides a deposition apparatus configured as a flip source type equipment configuration having deposition sources, e.g., deposition units, which are disposed within a processing chamber (e.g., a deposition unit) Allows one in-line system to change the deposition source (s) / deposition material (s) (e.g., cathode (s) / cathode material (s)) to in situ, (I.e., stack concepts) with different materials, with or without the need for venting. In some implementations, for example, in the case of touch panels, the system may be fabricated from one configuration that provides a three-layer stack for fabricating ITO with pattern invisibility ("invisible ITO"), May be shifted, switched, or flipped to another configuration that provides a subsequent metal stack, such as a "black metal" -stack. This metal stack is suitable for low-reflectivity, invisible "black metal bridges" (OGS / TOL concept for out-cell touchscreen panels (TSPs)) and on-cell type TSP metal mesh based touchscreen panel approaches Can be used for contact-out metal leads. Generally, for all subsequently disposed processing chambers having adjacent processes with space-consuming gas separations, this concept may be advantageous because the space for the deposition apparatus is reduced, for example by about 45% Because. Also, the switches may be used to adapt or modify the configuration of the deposition apparatus, and the number of power supplies may be reduced, i.e., no additional power supplies need be provided.

[0097] According to the present disclosure, the deposition apparatus is multi-functional, and only one deposition apparatus is provided for multiple stack concepts. The deposition apparatus is simple and allows fast switching between the stacks to be deposited. Deposition devices can support the development of PCT ("projected capacitive touch") touch screen panel technology from invisible ITO (also including black metal bridge) to block metal mesh. These embodiments can be applied to systems that provide different materials, for example, different metals and sets of various layers of metal oxides. Also, simple and fast in situ switching between deposition sources (such as the cathode (s)) is possible. The embodiments may be adapted / adjusted for different platform configurations, for example, in accordance with layer stack concepts. The present disclosure is applicable to processing chambers, for example, for easy and rapid, deposition source or deposition source material exchange. Customers can be supported at the product development stage by a flexible tool, and flexible tools can also be used for transition to HVM ("high volume manufacturing").

[0098] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof, and the scope of the present disclosure is defined by the following claims Lt; / RTI >

Claims (15)

A deposition apparatus for depositing a material on a substrate,
Two or more processing chambers including a first processing chamber and a second processing chamber;
A substrate support extending through at least the first processing chamber and the second processing chamber; And
Two or more deposition source assemblies including a first deposition source assembly in the first processing chamber and a second deposition source assembly in the second processing chamber,
Wherein each of the two or more deposition source assemblies comprises:
And at least one deposition source support configured to support at least one first deposition source and at least one process device,
Wherein the at least one deposition source support is configured to be movable between at least a first position and a second position,
Wherein the at least one first deposition source is oriented toward the substrate support and in the second position the at least one process device is oriented toward the substrate support,
A deposition apparatus for depositing a material on a substrate. The method according to claim 1,
Wherein the at least one process device comprises at least one of at least one second deposition source, a heating device and a deposition source conditioning device,
A deposition apparatus for depositing a material on a substrate. 3. The method according to claim 1 or 2,
Wherein the at least one deposition source support is configured to be rotatable about an axis of rotation of the at least one deposition source support and wherein the axis of rotation is substantially perpendicular to the transport direction of the substrate,
A deposition apparatus for depositing a material on a substrate. 4. The method according to any one of claims 1 to 3,
Wherein at least one of the two or more deposition source assemblies includes a separation wall,
A deposition apparatus for depositing a material on a substrate. 5. The method of claim 4,
Wherein the separation wall is configured to separate the at least one first deposition source from the at least one process device of the at least one deposition source assembly,
A deposition apparatus for depositing a material on a substrate. The method according to claim 4 or 5,
Wherein the separation wall is configured to separate at least one of the two or more processing chambers into a first chamber portion and a second chamber portion, wherein the at least one deposition source assembly is provided,
A deposition apparatus for depositing a material on a substrate. The method according to claim 6,
Wherein the separation wall is configured to hermetically seal the first chamber portion from the second chamber portion.
A deposition apparatus for depositing a material on a substrate. 8. The method according to any one of claims 4 to 7,
Wherein the separating wall is configured as a gas separation shielding.
A deposition apparatus for depositing a material on a substrate. 9. The method according to any one of claims 1 to 8,
Wherein the at least one deposition source support comprises: at least one first deposition source having a first deposition material, and at least one second deposition source having a second deposition material; Wherein the first deposition material and the second deposition material are different,
A deposition apparatus for depositing a material on a substrate. 10. The method according to any one of claims 1 to 9,
Wherein the two or more processing chambers include one or more additional processing chambers and at least one additional deposition source assembly is provided in at least one of the one or more additional processing chambers.
A deposition apparatus for depositing a material on a substrate. 11. The method according to any one of claims 1 to 10,
The deposition apparatus is configured to deposit at least a first layer stack and a second layer stack, wherein the second layer stack is different from the first layer stack,
A deposition apparatus for depositing a material on a substrate. 12. The method of claim 11,
The deposition apparatus may be formed of indium tin oxide (ITO), Nb _y O _x , Nb ₂ O ₅ , SiO ₂ , TiO ₂ And / or metal, in particular being configured to deposit said first layer stack including at least one of Al, Mo, Cu, and / or the deposition apparatus, MoNbO _x N _y, Al, AlNd, MoNb, and Mo, and / RTI >< RTI ID = 0.0 > Al, < / RTI >
A deposition apparatus for depositing a material on a substrate. A method for depositing a material on a substrate,
Depositing a first layer stack on a first substrate by a first deposition source assembly and a second deposition source assembly;
Moving at least one of the first deposition source assembly and the second deposition source assembly from a first position to a second position; And
Depositing a second layer stack on a second substrate;
A method for depositing a material on a substrate. 14. The method of claim 13,
Wherein each of the first deposition source assembly and the second deposition source assembly includes at least one first deposition source and at least one process device and wherein in the first position the first deposition source is directed toward the substrate And wherein in the second position, the at least one process device is oriented toward the substrate,
A method for depositing a material on a substrate. A deposition apparatus for depositing a first layer stack on a first substrate and a second layer stack on a second substrate, the second layer stack being different from the first layer stack,
Two or more processing chambers including a first processing chamber and a second processing chamber;
A substrate support extending through at least the first processing chamber and the second processing chamber; And
Two or more deposition source assemblies including a first deposition source assembly in the first processing chamber and a second deposition source assembly in the second processing chamber,
Each of the two or more deposition source assemblies comprises:
At least one deposition source support configured to support at least one first deposition source and at least one process device, the at least one process device comprising at least one second deposition source, a heating device and a deposition source conditioning device - < / RTI > And
A separation wall configured to separate the at least one first deposition source from the at least one process device,
Wherein the at least one deposition source support is configured to be movable between at least a first position and a second position,
Wherein the at least one first deposition source is oriented toward the substrate support and in the second position the at least one process device is oriented toward the substrate support,
A deposition apparatus for depositing a first layer stack on a first substrate and a second layer stack on a second substrate.

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