CN206858652U - For the equipment in depositing materials on substrates - Google Patents

For the equipment in depositing materials on substrates Download PDF

Info

Publication number
CN206858652U
CN206858652U CN201490001446.XU CN201490001446U CN206858652U CN 206858652 U CN206858652 U CN 206858652U CN 201490001446 U CN201490001446 U CN 201490001446U CN 206858652 U CN206858652 U CN 206858652U
Authority
CN
China
Prior art keywords
processing chamber
sedimentary origin
layer
deposition
depositing device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201490001446.XU
Other languages
Chinese (zh)
Inventor
T·W·齐尔鲍尔
A·赫尔米希
R·欣特舒斯特
U·慕尔菲德
B·斯托克
H·G·沃尔夫
M·班德尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of CN206858652U publication Critical patent/CN206858652U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A kind of depositing device (300) being used in depositing materials on substrates is provided.Depositing device (300) includes：Two or more processing chamber housings, including the first processing chamber housing (310) and second processing chamber (320)；Substrate support (330), extend at least through the first processing chamber housing (310) and second processing chamber (320)；And the second deposition source component (360) in the first deposition source component (350) and second processing chamber (320) in two or more deposition source components, including the first processing chamber housing (310).Each of two or more deposition source components includes being configured to support an at least sedimentary origin support member (351,361) at least one first sedimentary origin and at least one process unit.At least one sedimentary origin support member (351,361) is configured at least be moveable between the first location and the second location.In first position, at least one first sedimentary origin orientation is towards substrate support (330), and in the second position, at least one process unit is orientated towards substrate support (330).

Description

For the equipment in depositing materials on substrates
Technical field
Embodiment of the disclosure is related to a kind of depositing device being used in depositing materials on substrates.Embodiment of the disclosure has Body is related to a kind of sputtering equipment for being used for the sedimentary stacking on substrate.
Background technology
Contact panel (such as, touch-screen panel) is a kind of electronic visual display of special category, and it can be detected And the touching in locating and displaying region.Contact panel includes producing the layer stacking or saturating of feature screen (as touch-screen panel) Bright main body.However, readable, the coloured outward appearance (reflectivity) and color under the sunlight of contact panel are with lower section display institute Caused picture and change, and generally yield structuring sandwich layer (such as the electrically conducting transparent oxygen of patterning from feature screen Compound (TCO)) more or less visible pattern.
The concept that different layers stack uses in the manufacture of contact panel.These layers, which stack concept, to be included for example with anti-reflective Penetrate the layer stacking of coating, the stacks of metal layers of (such as Summoning bridge or Summoning net (mesh)) is stacked followed by such as Summoning It is folded.Layer, which stacks concept, also to be included for example with transparent insulating layer and patterning TCO layers (such as patterning indium tin oxide (ITO) Layer) layer stack so that patterning tco layer be invisible (" invisible TCO " or " invisible for user (i-)ITO”)。
The manufacturer of contact panel has extensively and continually changing product mix, along with rapidly adapting to allegro skill The demand of art evolution.Manufacturing equipment will can be directed to different product (such as the different layers of above-mentioned example stack) easy to quickly Adaptation is on one side.For example, in the manufacture of contact panel, it is stacked to from the layer with invisible TCO such as black The quick instrument conversion of the metal layer stack of metal layer stack is beneficial.However, many processing steps (such as in-line arrangement (in-line) in the tool of production) there is the gas separation unit of space-consuming, and the deposition separated between adjacent process unit The metal layer stack that the layer that equipment is often used to manufacture for example with invisible TCO stacks and such as Summoning layer stacks.
It is in view of above-mentioned, it is necessary to which a kind of depositing device being used in depositing materials on substrates, is which overcomed in this area extremely Few some problems.
The content of the invention
It is in view of above-mentioned, there is provided a kind of depositing device being used in depositing materials on substrates.Other aspect, advantages of the disclosure And feature is clearly visible from claims, specification and appended accompanying drawing.
According to the one side of the disclosure, there is provided a kind of depositing device being used in depositing materials on substrates.The depositing device Including two or more processing chamber housings, substrate support and two or more deposition source components, this is two or more Processing chamber housing includes the first processing chamber housing and second processing chamber, and substrate support extends at least through the first processing chamber housing and the Two processing chamber housings, this it is two or more deposition source components be included in the first processing chamber housing first deposition source component and The second deposition source component in second processing chamber.It is at least one heavy that each of two or more deposition source components includes Product source support member, at least one sedimentary origin support member are configured to support at least one first sedimentary origin to fill with least one technique Put.At least one sedimentary origin support member is configured at least be moveable between the first location and the second location.First In position, towards substrate support, and in the second position, at least one technique fills at least one first sedimentary origin orientation Orientation is put towards substrate support.
According to the another aspect of the disclosure, there is provided one kind, which is used to depositing first layer on the first substrate, to be stacked and the The depositing device that the second layer stacks is deposited on two substrates, wherein the second layer, which stacks, is different from first layer stacking.The depositing device bag Include two or more processing chamber housings, substrate support and two or more deposition source components, two or more places Reason chamber includes the first processing chamber housing and second processing chamber, and substrate support extends at least through the first processing chamber housing and second Processing chamber housing, two or more deposition source components are included in the first deposition source component in the first processing chamber housing and the The second deposition source component in two processing chamber housings.Each of two or more deposition source components includes at least one deposition Source support member and separates walls, at least one sedimentary origin support member are configured to support at least one first sedimentary origin and at least one Individual process unit, wherein at least one process unit include at least one second sedimentary origin, heater and sedimentary origin regulation At least one of device, separates walls are configured to separate at least one first sedimentary origin and at least one process unit. At least one sedimentary origin support member is configured at least be moveable between the first location and the second location.In first position In, at least one first sedimentary origin orientation is towards substrate support, and in the second position, at least one process unit takes To towards substrate support.
Brief description of the drawings
Therefore, in order to which the mode of the features described above of the disclosure can be understood in detail, refer to embodiment and draw brief excerpt In the more specific description of the upper disclosure.Appended accompanying drawing is related to embodiment of the disclosure and is described as follows：
Fig. 1 illustrates the schematic diagram for the depositing device in depositing materials on substrates；
Fig. 2 illustrates the schematic diagram for another depositing device in depositing materials on substrates；
Fig. 3 illustrates the schematic diagram for the depositing device in depositing materials on substrates according to embodiment described herein；
Fig. 4 illustrates the signal for another depositing device in depositing materials on substrates according to embodiment described herein Figure；And
Fig. 5 illustrates the signal for the another depositing device in depositing materials on substrates according to embodiment described herein Figure.
Embodiment
It will be described in detail now for various embodiments of the present invention, one or more example is shown in the accompanying drawings Go out.In the narration below for accompanying drawing, identical reference number means identical component.In general, only can be for independent Not existing together for embodiment is described.Each example only provides as the explanation to the disclosure, and is not meant as to this public affairs The limitation opened.In addition, the feature for being shown or describing as the part of one embodiment can be used for or with reference to other Embodiment, to produce further embodiment.This specification is intended to comprising such modification and change.
The manufacturer of contact panel has extensively and continually changing product mix, along with rapidly adapting to allegro skill The demand of art evolution.Manufacturing equipment be able to easy to quickly will adapt to be a side for different product (such as different layers stacking) Face.For example, it is necessary to be stacked to such as Summoning bridge or dark fund from invisible ITO in the manufacture of contact panel The quick instrument conversion for the metal stack that the Summoning layer of category net stacks.
The disclosure proposes a kind of depositing device being used in depositing materials on substrates.The depositing device includes two or more Processing chamber housing, substrate support and two or more deposition source components, two or more processing chamber housings include first Processing chamber housing and second processing chamber, substrate support extend at least through the first processing chamber housing and second processing chamber, and this two Individual or more deposition source component includes the in the first deposition source component and second processing chamber in the first processing chamber housing Two deposition source components.Each of two or more deposition source components include at least one sedimentary origin support member, and this is extremely A few sedimentary origin support member is configured to support at least one first sedimentary origin and at least one process unit.This is at least one heavy Product source support member is configured at least be moveable between the first location and the second location.When in first position, this is at least One the first sedimentary origin orientation towards substrate support, and in the second position when, at least one process unit orientation direction Substrate support.
According to some embodiments, the disclosure proposes that one kind is configured to the upset source class with sedimentary origin (such as sedimentation unit) The depositing device of type equipment (flip source type equipment) configuration, it can be in the original location at (in-situ) change Manage sedimentary origin/deposition materials (such as negative electrode/cathode material) in chamber (such as sedimentation unit) so that an in-line arrangement (in-line) system can have in the ventilation (venting) or even provided in the case where that need not divulge information of relatively low demand Two or more layers of different materials stack (stacking concept).In some embodiments, should such as contact panel System can be turned into offer from 3 stacked in multi-layers are provided to produce the invisible ITO of pattern (" invisible ITO ") configuration Another configuration of electrically conductive anti-reflective coating, the metal stack stacked followed by such as " Summoning ".Such metal stack can use (it is used for the monolithic glass solution of external hanging type (out-cell) touch-screen panel (TSP) in low reflection, invisible " Summoning bridge " Certainly scheme (One Glass Solution, OGS)/touch-control lens (Touch On Lens, TOL) concept), and can contact and be used for The outer plain conductor of touch-screen panel scheme based on integrated (on-cell) TSP wire nettings.
Deposition source component (such as roll-over unit) can provide at least one first deposition source component (such as negative electrode on side Source unit), and process unit is provided on another side, process unit such as at least one second deposition source component (such as it is another Negative electrode source unit) or other functional units, such as gas separation unit, heating unit, adjustment unit or its combination.
Term " substrate " used herein should include the substrate available for display manufacturing, e.g. glass or plastics base Plate.For example, substrate as described herein should be included available for liquid crystal display (LCD), plasm display panel Etc. (PDP) substrate.Unless clearly there is other different explanations in the description, otherwise term " substrate " is interpreted as herein Signified " large-area substrates ".
According to some embodiments, large-area substrates or corresponding carrier can have at least 0.67 square metre of size, wherein Carrier has one or more substrates.Typically, the size can be about 0.67 square metre (0.73 meter of x0.92 rice, the 4.5th Generation) to about 8 square metres, more typically about 2 square metres to about 9 square metres or even as high as 12 square metres.Typically, according to this The structure of the text embodiment is large-area substrates as described herein for the substrate or carrier of its offer.For example, large area base Plate or carrier can correspond to the 4.5th generation of about 0.67 square metre of substrate (0.73 meter × 0.92 meter), corresponding to about 1.4 squares Rice substrate (1.1 meters × 1.3 meters) the 5th generation, corresponding to about 4.29 square metres of substrates (1.95 meters × 2.2 meters) the 7.5th generation, The 8.5th generation corresponding to about 5.7 square metres of substrates (2.2 meters × 2.5 meters) or the substrate even corresponding to about 8.7 square metres 10th generation of (2.85 meters × 3.05 meters).The even more big generation, such as the 11st generation and the 12nd generation and corresponding substrate area could Implement in a similar way.
Term " substrate " used herein should also include flexible base board, such as web (web) or paper tinsel (foil).
Term used herein it is " transparent " should particularly including structure along with relatively low scattering transmit light Ability, such as the light for alloing to pass therethrough are seen in a manner of substantially clear.
According to some embodiments, it is to form (such as by way of deposition) on another layer or top by one layer that layer, which stacks, If if dried layer or dry film formed.Especially, the embodiments herein includes depositing a kind of layer stacking, and the layer, which stacks, may include At least one of metal level, transparent insulating layer and/or including transparent conducting oxide layer (such as ITO layers).When refer to term " on Side ", i.e., one layer it is square on another layer when, it should be understood that since substrate, first layer is deposited on surface, and in first layer The further layer deposited afterwards is therefore deposited on above first layer and surface.In other words, term " top " be for Definition layer, layer stack and/or the order of film, and wherein starting point is substrate.
According to the embodiment that some can be combined with other embodiment described herein, depositing device is configured to deposition at least first Layer stacking stacks with the second layer, and especially wherein second layer stacking is different from first layer stacking.First layer stacks to be stacked with the second layer It may include different materials or material layer.In the exemplary embodiment, depositing device, which is configured to deposit first layer, stacks, and this One layer of stacking includes indium tin oxide (ITO) and NbyOx、 Nb2O5、SiO2、TiO2And/or in metal (especially Al, Mo and Cu) At least one, and/or depositing device be configured to deposit the second layer stack, the second layer stack include MoNbOxNy, aluminium, AlNd And at least one of MoNb or other of molybdenum and aluminium alloy.The disclosure proposes depositing device, and the depositing device is for example configured to One inline system, it is provided to two or more stacking concepts with different materials.
Fig. 1 illustrates the schematic diagram for the depositing device 100 in depositing materials on substrates.Depositing device 100 can be configured to The deposition stacked for first layer, the first layer are stacked for example including metal layer stack, and such as Summoning layer is (such as black Metal bridge or Summoning net), and optionally include indium tin oxide (ITO) layer.
Exemplarily, the depositing device 100 in Fig. 1 includes Part I 110 and Part II 120, and Part I 110 is used In the deposition of the metal level of one or more layers, Part II 120 is used for the deposition of at least one ITO layers.Part I 110 It can be separated with Part II 120 by separates walls 170.Part I 110 includes several first vacuum chambers, such as first entrance Load lock chamber 111, the first processing chamber housing 112 and first outlet load lock chamber 113.Similarly, Part II 120 Including several second vacuum chambers, such as second entrance load lock chamber 121, second processing chamber 122 and second outlet are born Carry locking cavity 123.First vacuum chamber and the second vacuum chamber can be respectively by separators 160 and the first adjacent vacuum Chamber and the separation of the second vacuum chamber.
Air in one or more the first vacuum chambers and/or the second vacuum chamber can pass through generation technology vacuum Come individually control, such as using at least some of vavuum pump 150 being connected in the first vacuum chamber and the second vacuum chamber come Generation technology vacuum.As an example, air can be by generation technology vacuum and/or by the way that process gas is inserted into the first processing chamber Deposition region in room 112 and/or second processing chamber 122 individually controls.
First substrate support member 130 (such as be disposed for transmitting or transport substrate or have what substrate was arranged on First carrier) extend through Part I 110, and second substrate support member 140 (such as be disposed for transmitting or transporting substrate Or the second carrier being arranged on substrate) extend through Part II 120.Substrate (not shown) passes through Part I 110 are represented with the transmission direction of Part II 120 with arrow 131.
At least one first sedimentary origin 116, at least one second sedimentary origin 117, at least one 3rd sedimentary origin 118 and extremely Few 4th sedimentary origin 119 may be provided in the first processing chamber housing 112.At least one first sedimentary origin 116, at least one Individual second sedimentary origin 117, at least one 3rd sedimentary origin 118 and at least one 4th sedimentary origin 119 are configurable to metal level Stack the deposition of (such as including Summoning bridge or Summoning net).As an example, at least one first sedimentary origin 116 can wrap The double MoNb rotating cathodes of intermediate frequency (MF) are included, at least one second sedimentary origin 117 may include direct current (DC) MoNb rotating cathodes, At least one 3rd sedimentary origin 118 may include direct current aluminium rotating cathode, and at least one 4th sedimentary origin 119 may include directly Flow MoNb rotating cathodes.
Gas separation shielding 114 may be provided at for example, at least first sedimentary origin 116 and at least one second sedimentary origin Between 117.Gas separation shielding 114 can have at least one opening 115, to allow to pump by it.
At least one 5th sedimentary origin 124 and at least one 6th sedimentary origin 125 are arranged in second processing chamber 122. At least one 5th sedimentary origin 124 is configurable to the deposition of at least one ITO layer with least one 6th sedimentary origin 125. At least one of at least one 5th sedimentary origin 124 and at least one 6th sedimentary origin 125 may include that direct current ITO rotations are cloudy Pole.
Depositing device 100 is configurable to metal layer stack (including such as MoNbOxNyAnd aluminium) deposition, and be configurable to The deposition of at least one ITO layer.In order to which deposited metal layer stacks, pending substrate can be via first entrance load lock chamber 111 are inserted into the first processing chamber housing 112.Including such as MoNbOxNyAnd the deposition of metal of aluminium is on substrate, and substrate passes through One outlet load lock chamber 113 leaves depositing device 100.Then, in order to deposit at least one ITO layer, there is processing thereon That crosses includes such as MoNbOxNyAnd the substrate of the metal level of aluminium is inserted into second processing via second entrance load lock chamber 121 In chamber 122.At least one ITO layer is deposited on surface, and has what is treated to include such as MoNbO thereonxNyAnd aluminium Metal level and the substrate of at least one ITO layer depositing device 100 is left by second outlet load lock chamber 123.
Fig. 2 illustrates the schematic diagram of the depositing device 200 of the deposition stacked for the second layer, and the second layer is stacked for example including one Individual or more transparent insulating layer and at least one (patterning) tco layer, such as indium tin oxide (ITO) layer so that (pattern Change) tco layer is invisible (" invisible TCO " or " invisible (i-) ITO ") for the user.
Exemplarily, the depositing device 200 in Fig. 2 includes Part I 210 and Part II 220, and Part I 210 is used In the deposition of the transparent insulating layer of one or more layers, Part II 220 is used for the deposition of at least one ITO layer.Part I 210 and Part II 220 can be separated by separates walls 270.Part I 210 includes several first vacuum chambers, and such as entrance is born Carry the processing chamber housing 212 of locking cavity 211 and first.Part II 220 includes several second vacuum chambers, such as second processing Chamber 222 and outlet load lock chamber 221.First vacuum chamber and the second vacuum chamber can by separator 260 respectively with The first adjacent vacuum chamber and the separation of the second vacuum chamber.
Depositing device 200 may include one or more further vacuum chambers, such as transfer chamber 240.Transfer chamber Room 240 can connect Part I 210 and Part II 220.Transfer chamber 240 may include board transport instrument, be disposed for Substrate is transmitted or transmitted to Part II 220 (especially the from Part I 210 (especially from the first processing chamber housing 212) Two processing chamber housings 222) in.
In the first vacuum chamber, the second vacuum chamber and further vacuum chamber (such as transferring chamber 240) at least Air in one can individually be controlled by generation technology vacuum, such as using being connected to the first one or more vacuum chambers The vavuum pump 250 of room, the second vacuum chamber and further vacuum chamber (such as transferring chamber 240) carrys out generation technology vacuum. As an example, air can be by generation technology vacuum and/or by the way that process gas is inserted into the first processing chamber housing 212 and/or the Deposition region in two processing chamber housings 222 individually controls.
First substrate support member 230 (such as be disposed for transmitting or transport substrate or have what substrate was arranged on First carrier) extend through Part I 210.Second substrate support member 280 (such as be disposed for transmitting or transport substrate or The second carrier being arranged on substrate) extend through Part II 220.The transmission side that substrate passes through Part I 210 Represent to arrow 231, substrate is represented by the transmission direction of Part II 220 with arrow 232.In transfer chamber 240 In, substrate can be sent to second substrate support member 280 from first substrate support member 230.
At least one first sedimentary origin 216, at least one second sedimentary origin 217 and at least one 3rd sedimentary origin 218 can It is arranged in the first processing chamber housing 212.At least one first sedimentary origin 216, at least one second sedimentary origin 217 and at least One the 3rd sedimentary origin 218 is configurable to the deposition of the transparent insulating layer of one or more layers.As an example, this is at least one First sedimentary origin 216 may include intermediate frequency (MF) Nb2O5Rotating cathode pair, at least one second sedimentary origin 217 may include intermediate frequency SiO2Rotating cathode pair, at least one 3rd sedimentary origin 218 may also comprise intermediate frequency SiO2Rotating cathode pair.
Gas separation shielding 214 may be provided at for example, at least first sedimentary origin 216 and at least one second sedimentary origin Between 217.Gas separation shielding 214 can have at least one opening 215, to allow to pump by it.
At least one 4th sedimentary origin 224 and at least one 5th sedimentary origin 225 are arranged in second processing chamber 222. At least one 4th sedimentary origin 224 is configurable to the deposition of at least one ITO layer with least one 5th sedimentary origin 225. At least one of at least one 4th sedimentary origin 224 and at least one 5th sedimentary origin 225 are configurable to ITO deposition, And can be for example including direct current ITO rotating cathodes.
Depositing device 200 is configurable to the deposition of second layer stacking, and the second layer, which stacks, includes such as Nb2O5Layer and SiO2Layer Transparent insulating layer and at least one ITO layer.Stacked to deposit the second layer, pending substrate can be locked via ingress load Determine chamber 211 to be inserted into the first processing chamber housing 212.Such as Nb2O5Layer and SiO2The transparent insulating layer of layer is deposited on substrate, and Substrate enters transfer chamber 240, and substrate is transferred to second substrate support in chamber 240 is transferred from first substrate support member 230 Part 280.Then, in order to deposit at least one ITO layer, there is treated such as Nb thereon2O5Layer and SiO2The transparent insulation of layer The substrate of layer is inserted into second processing chamber 222 from transfer chamber 240.At least one ITO layer is deposited on surface, and Have what is treated to include such as Nb thereon2O5Layer and SiO2The transparent insulating layer of layer and the substrate of at least one ITO layer are by going out Mouth load lock chamber 223 leaves depositing device 200.
Fig. 3 shows to be shown according to the depositing device 300 of deposition materials on substrate 340 that is used for of embodiment described herein It is intended to.According to some embodiments, depositing device 300 is configured to deposit two or more different layers stackings, such as with not First layer with material stacks and second layer stacking.
Depositing device 300 includes two or more processing chamber housings, substrate support 330 and two or more sedimentary origins Component, two or more processing chamber housings include the first processing chamber housing 310 and second processing chamber 320, substrate support 330 The first processing chamber housing 310 and second processing chamber 320 are extended at least through, two or more deposition source components include first The second deposition source component 360 in the first deposition source component 350 and second processing chamber 320 in processing chamber housing 310.This two Each of individual or more deposition source component includes at least one sedimentary origin support member, at least one sedimentary origin support member It is configured to support at least one first sedimentary origin and at least one process unit.At least one sedimentary origin support member be configured to Few is moveable between the first location and the second location.In first position, at least one first sedimentary origin orientation court To substrate support 330, and in the second position, at least one process unit is orientated towards substrate support 330.This two Or more processing chamber housing can be application of vacuum chamber.
According to some embodiments, substrate support 330 may include roller, so as to substrate 340 or set with substrate 340 Carrier thereon is transmitted into the first processing chamber housing 310 and/or second processing chamber 320, by the first processing chamber housing 310 And/or second processing chamber 320 and leave the first processing chamber housing 310 and/or second processing chamber 320.As an example, the One processing chamber housing 310 and second processing chamber 320 can be separated by separator 370.Separator 370 may include valve 371, example There is valve chest and valve cell in this way.Separator 370 and particularly valve 371 can be configured to the first processing chamber housing 310 and Load lock apparatus between two processing chamber housings 320.Substrate support 330 is configurable to make substrate 340 from the first processing chamber Room 310 is transmitted into second processing chamber 320 by separator 370, and/or makes substrate 340 logical from second processing chamber 320 Separator 370 is crossed to transmit into the first processing chamber housing 310.
In some embodiments, at least one process unit includes at least one second sedimentary origin, heater and sunk At least one of product source adjusting means.In figure 3, the first deposition source component 350 includes sedimentary origin support member (such as first is heavy Product source support member 351), at least one first sedimentary origin (such as the first sedimentary origin is to 352) and at least one process unit (example If the second sedimentary origin is to 353).Second deposition source component 360 includes sedimentary origin support member (such as the second sedimentary origin support member 361), at least one first sedimentary origin (such as first single sedimentary origin 362) and at least one process unit (the such as the 3rd deposition Source is to 363).
According to the embodiment that some can be combined with other embodiment described herein, at least one sedimentary origin support member is configured to Support at least one first sedimentary origin with the first deposition materials and including at least one the with the second deposition materials At least one process unit of two sedimentary origins, wherein the first deposition materials are different from the second deposition materials.
First in Fig. 3 deposits the first sedimentary origin support member 351 of source component 350 in the second position, and the second deposition Source is orientated towards substrate 340 or substrate support 330 to 353.Second sedimentary origin support member 361 of the second deposition source component 360 In the second position, and the 3rd sedimentary origin is orientated towards substrate support 330 to 363.By the second of the first deposition source component 350 The second deposition materials that sedimentary origin is provided 353 can be deposited on substrate 340, and provided by the first sedimentary origin 352 First deposition materials are not deposited on substrate 340.The provided by the 3rd sedimentary origin of the second deposition source component 360 363 Four deposition materials can be deposited on substrate 340, and the 3rd deposition materials provided by first single sedimentary origin 362 are not deposited on base On plate 340.
According to the embodiment that some can be combined with other embodiment described herein, at least one sedimentary origin support member is configured to Rotary shaft around at least one sedimentary origin support member is rotatable, and especially the wherein rotary shaft is substantially perpendicular to substrate Transmission direction.The transmission direction of substrate (such as substrate 340) is represented with label 341.The position of at least one sedimentary origin support member Changing from first position to the second place or changing from the second place to first position may include to rotate at least one sedimentary origin Support member about 180 degree.
As an example, the first sedimentary origin support member 351 of the first deposition source component 350 is configured to around the first rotary shaft 355 be rotatable.The position of first sedimentary origin support member 351 changes to the second place from first position or from the second place Changing to first position may include to rotate about 180 degree of the first sedimentary origin support member 351.The second of second deposition source component 360 is heavy Product source support member 361 is configured to around the second rotary shaft 365 be rotatable.The position of second sedimentary origin support member 361 is from One position, which changes to the second place or changed from the second place to first position, may include to rotate the second sedimentary origin support member 361 About 180 degree.
According to the embodiment that some can be combined with other embodiment described herein, depositing device provides two or more heavy The orientation of two or more configuration of the corresponding sedimentary origin support member of product source component.The heavy of two or more configurations is provided Product equipment can in the original location (in-situ) change in processing chamber housing (such as sedimentation unit) sedimentary origin/deposition materials (such as Negative electrode/cathode material) so that an inline system can the ventilation in relatively low demand or the situation even without ventilation Lower two or more layers provided with different materials stack (stacking concept).The disclosure is not limited to two kinds of offer and matched somebody with somebody Put.It can provide for depositing one or more extra layers stackings or layer stack the further configuration of concept.
According to the embodiment that some can be combined with other embodiment described herein, depositing device is configured to deposit at least one First layer stacks to be stacked with the second layer, and especially, wherein the second layer stacks stacks different from first layer.Depositing device is configurable to First layer is deposited in the first configuration of two or more deposition source components to stack, and is configurable to two or more heavy The second layer is deposited in second configuration of product source component to stack.First configuration may include the corresponding of two or more deposition source components Sedimentary origin support member first orientation.Second configuration may include the corresponding sedimentary origin branch of two or more deposition source components The second orientation of support member.In herein below, it is described for the example of the first configuration and the second configuration.As the first example, At least one sedimentary origin support member of one deposition source component can be in first position, and the second deposition source component is at least one heavy Product source support member can be in first position.As the second example, at least one sedimentary origin support member of the first deposition source component can In the second position, and the second at least one sedimentary origin support member for depositing source component can be in the second position.Show as the 3rd Example, at least one sedimentary origin support member of the first deposition source component can be in first position, and the second deposition source component is at least One sedimentary origin support member can be in the second position.As the 4th example, at least one sedimentary origin branch of the first deposition source component Support member can in the second position, and at least one sedimentary origin support member of the second deposition source component can be in first position.
According to the embodiment that some can be combined with other embodiment described herein, two or more deposition source components are extremely Few deposition source component includes separates walls.In some embodiments, at least one of two or more deposition source components Including two or more separates walls.Separates walls may include the first separates walls 354 and second of the first deposition source component 350 Deposit the second separates walls 364 of source component 360.
In some embodiments, separates walls are configured at least one first deposition for making at least one deposition source component Source separates with least one process unit.According to embodiment, separates walls are arranged at least one of at least one deposition source component Between first sedimentary origin and at least one process unit.As an example, the first separates walls 354 of the first deposition source component 350 can Be arranged on the first sedimentary origin to 352 and second sedimentary origin between 353.Second separates walls 364 may be provided at first single sedimentary origin 362 and the 3rd sedimentary origin between 363.
According to the embodiment that some can be combined with other embodiment described herein, separates walls are configured to make two or more At least one processing chamber housing of processing chamber housing is separated into first chamber part and second chamber part, wherein at least one sedimentary origin Component is arranged at least one processing chamber housing of two or more processing chamber housings.As an example, the first separates walls 354 are matched somebody with somebody It is set to the processing chamber housing 310 of first chamber part 311 and first for making the first processing chamber housing 310 be separated into the first processing chamber housing 310 Second chamber part 312.Second separates walls 364 are configured to make second processing chamber 320 be separated into second processing chamber 320 First chamber part 321 and second processing chamber 320 second chamber part 322.
In some embodiments, first chamber part (such as the first chamber part 311 of the first processing chamber housing 310 with The first chamber part 321 of second processing chamber 320) and second chamber part (such as the second chamber of the first processing chamber housing 310 The second chamber part 322 of part 312 and second processing chamber 320) it is that there are different gas (such as process gas) partial pressures And/or kind sector of breakdown.According to some embodiments, first chamber part includes substrate support, and second chamber part is storage Portion, such as when at least one first sedimentary origin or at least one process unit are not orientated towards substrate support, storage part To store at least one first sedimentary origin or at least one process unit.As an example, in first position, it is at least one First sedimentary origin is positioned in first chamber part, and at least one process unit is in second chamber part, and second In position, at least one process unit is in first chamber part, and at least one first sedimentary origin is positioned at second chamber portion In point.Second chamber part can be storage part.
According to the embodiment that some can be combined with other embodiment described herein, second chamber part can have vacuum lock or Door.Vacuum lock OR gate can be opened, such as at least one first sedimentary origin or at least one for being positioned in second processing chamber Maintenance, maintenance or the exchange of individual process unit.In some embodiments, due to be positioned in second chamber part at least one Individual first sedimentary origin or at least one process unit be inactive or not in use, can be completed during depositing operation opening Vacuum lock OR gate, while can in order to maintenance, maintenance or the exchange of at least one first sedimentary origin or at least one process unit At least one process unit or at least one first sedimentary origin being operatively positioned in first chamber part.Which reduce deposition to set It is standby for the downtime for being, for example, maintenance, maintenance or the exchange of at least one first sedimentary origin or at least one process unit.
In some embodiments, two or more sedimentary origin component Configurations be used for overturn sedimentary origin (such as negative electrode) and It is easily installed (such as installed in track for door to be removed and repositioned at depositing device).Exemplarily, this two Or more sedimentary origin component Configuration to overturn the sedimentary origin (such as negative electrode) in specified processing chamber housing, while can be heavy The ventilation for maintaining relatively low demand or the processing chamber housing even without ventilation depositing device or depositing device are provided in product equipment (sedimentary origin or process unit (such as outside/extra negative electrode) in second chamber part and the deposition in first chamber part Extra vacuum lock between source or process unit (such as inner cathode)) remove currently without using sedimentary origin ability.
According to the embodiment that some can be combined with other embodiment described herein, separates walls are configured to gas-tight seal first chamber Room part completely cuts off with second chamber part.In certain embodiments, separates walls are configured to gas separation shielding.First chamber part Can be that there is different gas (such as process gas) partial pressure and/or kind sector of breakdown with second chamber part.Process gas can Including inert gas and/or reacting gas, inert gas such as argon gas, reacting gas such as oxygen, nitrogen, hydrogen (H2) and ammonia (NH3), ozone (O3), active gases etc..
Term used herein " airtightly " refers to substantially airtight sealing.The sealing is to gas (such as process gas Body) can be impermeable.As an example, the first separates walls 354 are configured to the first of gas-tight seal first processing chamber housing 310 Chamber portion 311 and the second chamber part 312 of the first processing chamber housing 310 completely cut off.Second separates walls 364 are configured to airtight The first chamber part 321 and the second chamber part 322 of second processing chamber 320 of sealing second processing chamber 320 completely cut off.
Fig. 4 shows to be used for another depositing device 400 of deposition materials on substrate 340 according to embodiment described herein Schematic diagram.According to some embodiments, depositing device 400 is configured to deposit two or more different layers and stacked, such as with The first layer of different materials stacks to be stacked with the second layer.
Difference between Fig. 3 depositing device 300 and Fig. 4 depositing device 400 is in the first processing chamber housing The configuration of the second deposition source component in one deposition source component and second processing chamber.With reference to figure 3 in above-described feature Description be also applied for the character pair of embodiment illustrated in fig. 4, repeated no more in this.
In some embodiments, at least one process unit includes at least one second sedimentary origin, heater and sunk At least one of product source adjusting means.In Fig. 4, the first deposition source component 450 includes sedimentary origin support member (such as first is heavy Product source support member 351), at least one first sedimentary origin (such as first single sedimentary origin 452) and at least one process unit it is (all If the first sedimentary origin is to 453).Second deposition source component 460 includes sedimentary origin support member (such as the second sedimentary origin support member 361), at least one first sedimentary origin (such as second single sedimentary origin 462) and (such as heating dress of at least one process unit 463 Put and/or sedimentary origin adjusting means).
Although showing the first processing chamber housing and second processing chamber in Fig. 3 and 4, the right disclosure is not limited to offer two Individual processing chamber housing.According to the embodiment that some can be combined with other embodiment described herein, two or more processing chamber housings Including one or more further processing chamber housings, wherein at least one further deposits source component and provided at this or more In at least one of more further processing chamber housings.As an example, any amount of processing chamber housing can be provided, for example, at least 3, Especially at least 10 processing chamber housings.
According to the embodiment that some can be combined with other embodiment described herein, depositing device further comprises controller, To control movement or rotation of at least one sedimentary origin support member between first position and the second place.When equipment provides two During the orientation of two or more configuration of the corresponding sedimentary origin support member of individual or more deposition source component, the controller can Configure to change between two or more configurations.As an example, controller is configurable to the stacked in deposition first layer Change between the second configuration that one configuration and the deposition second layer stack.The disclosure is not limited to provide two kinds of configurations.Can provide into The configuration of one step is stacked for one or more extra layers or the deposition of layer stacking concept.
There is provided the depositing device of two or more configurations can change in processing chamber housing (such as sedimentation unit) in the original location Sedimentary origin/deposition materials (such as negative electrode/cathode material) so that inline system can relatively low demand ventilation, Or even without ventilation in the case of provide and stack (stacking concept) with two or more layers of different materials.
Fig. 5 shows the showing for the another depositing device 500 in depositing materials on substrates according to embodiment described herein It is intended to.According to some embodiments, depositing device 500 is configured to deposit two or more different layers stackings, such as with not First layer with material stacks and second layer stacking.
In Fig. 5, depositing device 500 is in the first configuration of the deposition stacked for first layer, and first layer, which stacks, is, for example, Stacked with the layer of one or more layers transparent insulating layer and at least one transparent conductive oxide (TCO) layer, electrically conducting transparent oxygen Compound layer is, for example, indium tin oxide (ITO) layer (such as " invisible ITO ").According to some embodiments, at least one TCO Layer can be the tco layer of structuring, and can be for example, by depositing tco layer and patterning the tco layer to provide the tco layer of structuring To provide.Or, it is possible to provide mask and/or photoresist, to deposit the tco layer of structuring.
According to the embodiment that some can be combined with other embodiment described herein, at least one tco layer may include following At least one：Indium tin oxide (ITO) layer, the ITO layer of doping, ZnO, In of impurity doping2O3、SnO2And CdO, ITO (In2O3:Sn)、AZO(ZnO:Al)、IZO(ZnO:In)、GZO (ZnO:Ga) or including or by ZnO, In2O3, SnZnO and SnO2 The multicomponent oxide that is formed of combination or combinations of the above.In herein below, the example using ITO as at least one tco layer Refer to.
Exemplarily, the depositing device 500 in Fig. 5 includes Part I 510 and Part II 540, and Part I 510 is used In the deposition for the one or more layers transparent insulating layer that first layer stacks, Part II 540 is used for the heavy of at least one ITO layer Product.Part I 510 and Part II 540 can be separated by separates walls 520.Part I 510 includes several first vacuum chambers, And Part II 540 includes several second vacuum chambers.According to some embodiments, the first vacuum chamber and the second vacuum chamber It can be separated respectively with adjacent the first vacuum chamber and the second vacuum chamber by separator 590.As an example, separator 590 may include the valve with valve chest and valve cell.Separator 590 can be configured to the first adjacent vacuum chamber with it is adjacent The second vacuum chamber between load lock apparatus.
According to the embodiment that some can be combined with other embodiment described herein, the first vacuum chamber and the second vacuum chamber Can be selected to adjust chamber, deposition chambers, processing chamber housing etc. by buffer chamber, heating chamber, transfer chamber, circulation time The chamber for the group that chamber is formed.According to the embodiment that some can be combined with other embodiment described herein, " processing chamber housing " It can be regarded as wherein arranging the chamber of the processing unit of processing substrate.Processing unit can be regarded as handling any of substrate Device.For example, processing unit may include the sedimentary origin for depositing one layer on substrate.Therefore, including it is, for example, to deposit The vacuum chamber or processing chamber housing of source component are also referred to as deposition chambers.Processing chamber housing can be chemical vapor deposition (CVD) Chamber or physical vapour deposition (PVD) (PVD) chamber.According to the embodiment that some can be combined with other embodiment described herein, two or More processing chamber housings can be application of vacuum chamber.
At least some in first vacuum chamber and the second vacuum chamber can be configured to processing chamber housing.As an example, configuration It can each include at least one sedimentary origin group at least some in the first vacuum chamber and the second vacuum chamber of processing chamber housing Part.At least one deposition source component may include at least one sedimentary origin, such as the first sedimentary origin and/or the second sedimentary origin.Deposition Source can be for example the rotatable cathode with the target to be deposited on the material on substrate.Negative electrode can be with magnetron wherein Rotatable cathode.As an example, magnetron sputtering can be carried out, stacked (such as first layer stacks and the second layer stacks) with sedimentary Layer.As an example, negative electrode is connected to AC power (not shown), negative electrode is set to be applied in bias in an alternating fashion.
" magnetron sputtering " used herein refers to using magnet assemblies (unit that can namely produce magnetic field) institute The sputtering of execution.As an example, such magnet assemblies are made up of permanent magnet.This permanent magnet can be to cause can The mode for catching free electron caused by rotary target lower face in caused magnetic field is arranged in rotatable target or is coupled to Flat target.Such magnet assemblies, which can also be arranged to, is coupled to planar cathode.
Magnetron sputtering can realize by double magnetoelectricity tube cathodes (i.e. sedimentary origin to), such as, but not limited to TwinMagTM negative electrodes Component.Especially, sputtered for the MF for example from silicon target, the target assembly for including twin cathode can be applied.According to some embodiments, Sedimentary origin in processing chamber housing can be tradable.Therefore, sedimentary origin or target are changed after material has exhausted.
According to some embodiments, the layer of such as transparent insulating layer can pass through the sputtering of the rotatable cathode with AC power (such as magnetron sputtering) deposits.As an example, MF can be applied to sputter to deposit transparent insulating layer.According to some embodiments, from The sputtering of silicon target (such as silicon target of injection) is carried out by MF sputterings, that is, mid frequency sputtering.According to the embodiments herein, in Frequency is that scope is frequency in 5kHz to 100kHz, such as 10kHz to 50kHz.
D.c. sputtering can be used as to carry out from the sputtering for transparent conductive oxide film (such as ITO) of target.Accordingly Sedimentary origin is connected to dc source (not shown) together with the anode (not shown) that electronics is collected during sputtering.Can according to some The embodiment combined with other embodiment described herein, including transparent conducting oxide layer (such as ITO layer) can by d.c. sputtering come Sputtering.
According to some embodiments, the first vacuum chamber of Part I 510 may include ingress load locking cavity 511, One processing chamber housing 512, second processing chamber 513, the 3rd processing chamber housing 514, the processing chamber housing of fourth process chamber 515 and the 5th 516.According to some embodiments, the second vacuum chamber of Part II 540 may include the 6th processing chamber housing 541, the 7th processing chamber Room 542, the 8th processing chamber housing 543, the 9th processing chamber housing 544, the tenth processing chamber housing 545 and outlet load lock chamber 546.
Depositing device 500 may include further vacuum chamber, such as transfer chamber 530, transfer chamber 530 connection the A part 510 and Part II 540.Transfer chamber 530 may include board transport instrument, be configured to substrate from Part I 510 (especially from the 5th processing chamber housing 516) transmission are transmitted into Part II 540 (especially the 6th processing chamber housing 541). Board transport instrument may include to turn to or the instrument of rotary plate.
In the first vacuum chamber, the second vacuum chamber and/or further vacuum chamber (such as transferring chamber 530) Air in one or more can individually be controlled by generation technology vacuum, such as using being connected to the first vacuum chamber, second The vavuum pump (not shown) of one or more of vacuum chamber and further vacuum chamber (such as transfer chamber 530) produces Raw technology vacuum.As an example, air can by load lock chamber 511, processing chamber housing 512~516 and 541~545, enter Generation technology is true at least one of the vacuum chamber (such as transferring chamber 530) of one step and outlet load lock chamber 546 Sky individually controls, and/or by introducing process gases at least one in such as processing chamber housing 512~516 and 541~545 Individually controlled in the deposition region of person.Process gas may include inert gas (such as argon gas) and/or reacting gas (such as oxygen Gas, nitrogen, hydrogen (H2) and ammonia (NH3), ozone (O3), active gases etc.).
First substrate support member 560 (such as be disposed for supporting and transmit or transport substrate or be arranged at substrate The first carrier thereon) extend through Part I 510, and second substrate support member 561 (such as be disposed for supporting and pass The second carrier that is defeated or transporting substrate or be arranged on substrate) extend through Part II 540.Substrate passes through first Points 510 (not shown) transmission direction represents with arrow 562, the (not shown) transmission direction that substrate passes through Part II 540 Represented with arrow 563.In chamber 530 is transferred, substrate can be sent to second substrate support member from first substrate support member 560 561.First substrate support member 560 for example can be connected to transfer chamber 530 with second substrate support member 561 by board transport instrument In.
In Part I 510, at least one first deposition source component 570 may be provided in the first processing chamber housing 512. First deposition source component 570 can be configured to above with reference to any one of deposition source components described of Fig. 3 and 4.First sedimentary origin Component 570 may include sedimentary origin support member 587, separates walls 588, NbOxSedimentary origin to 576 and the first MoNb sedimentary origins to 577. NbOxSedimentary origin is orientated to 576 towards first substrate support member 560, for for example depositing Nb in surface2O5Layer, and first MoNb sedimentary origins are inactive or in storage location to 577, such as in the second chamber part of the first processing chamber housing 512 In.
At least one second deposition source component 571 may be provided in fourth process chamber 515.Second deposition source component 571 It can be configured to above with reference to any one of deposition source components described of Fig. 3 and 4.Second deposition source component 571 may include to deposit Source support member 587, separates walls 588, the first silicon depositing source to 578 and the 2nd MoNb sedimentary origins to 579.First silicon depositing source pair 578 orientations are towards first substrate support member 560, for for example depositing SiO on substrate2Layer, and the 2nd MoNb sedimentary origins are to 579 It is inactive or in storage location, such as in the second chamber part of fourth process chamber 515.
At least one 3rd deposition source component 572 may be provided in the 5th processing chamber housing 516.3rd deposition source component 572 It can be configured to above with reference to any one of deposition source components described of Fig. 3 and 4.3rd deposition source component 572 may include to deposit Source support member 587, the silicon depositing source of separates walls 588 and second are to 580.Second silicon depositing source is orientated towards first substrate branch to 580 Support member 560, for for example depositing SiO on substrate2Layer.
In Part I 510, the processing chamber housing 514 of second processing chamber 513 and the 3rd can each have gas separation screen Cover.Gas separation shielding can have slit opening, to allow substrate to pass through wherein.
In Part II 540, at least one 4th deposition source component 573 may be provided in the 8th processing chamber housing 543. 4th deposition source component 573 can be configured to above with reference to any one of deposition source components described of Fig. 3 and 4.4th sedimentary origin Component 573 may include that (such as heater and/or sedimentary origin are adjusted for sedimentary origin support member 587, separates walls 588, process unit 581 Regulating device) and aluminium list sedimentary origin 582.Process unit 581 is orientated towards second substrate support member 561, such as heating substrate And/or the layer on substrate is deposited on, and aluminium list sedimentary origin 582 is inactive or in storage location, such as in the 8th processing In the second chamber part of chamber 543.
At least one 5th deposition source component 574 may be provided in the 9th processing chamber housing 544.5th deposition source component 574 It can be configured to above with reference to any one of deposition source components described of Fig. 3 and 4.5th deposition source component 574 may include to deposit Source support member 587, separates walls 588, the first ITO sedimentary origins are to 583 and al deposition source to 584.First ITO sedimentary origins take to 583 To towards second substrate support member 561, such as depositing ITO layer in surface, and al deposition source is inactive to 584 Or in storage location, such as in the second chamber part of the 9th processing chamber housing 544.
At least one 6th deposition source component 575 may be provided in the tenth processing chamber housing 545.6th deposition source component 575 It can be configured to above with reference to any one of deposition source components described of Fig. 3 and 4.6th deposition source component 575 may include to deposit Source support member 587, separates walls 588, the 2nd ITO sedimentary origins are to the mono- sedimentary origins of 585 and MoNb or Mo 586.2nd ITO sedimentary origins To 585 orientations towards second substrate support member 561, such as depositing ITO layer, and the mono- depositions of MoNb or Mo in surface Source 586 is inactive or in storage location, such as in the second chamber part of the tenth processing chamber housing 545.
In this example, the 6th processing chamber housing 541 and the 7th processing chamber housing 542 all do not include depositing source component.However, The disclosure is not limited to this, and in order to realize that further or different layer stacks concept, the further source component that deposits can be set In the 6th processing chamber housing 541 and the 7th processing chamber housing 542.
In some embodiments, at least one pressure sensor (not shown) may be provided at processing chamber housing 512~516 And 541~545 at least one in.At least one pressure sensor is configured to measure (partial pressure) pressure of process gas. At least one pressure sensor especially can be oxygen pressure sensor or nitrogen pressure sensor.As described herein Layer can be oxide layer, nitration case or nitrogen oxidation layer, and can be deposited by reaction equation depositing operation, and work is deposited in reaction equation In skill, target reacts with oxygen and/or nitrogen after material disengages from target.By providing pressure sensor, there is appropriate place The air of process gases and/or suitable degree of technology vacuum may be provided in corresponding processing chamber housing, especially locate accordingly In the deposition region for managing chamber.
According to some embodiments, process gas may include inert gas (such as argon gas) and/or reacting gas (such as oxygen Gas, nitrogen, hydrogen (H2) and ammonia (NH3), ozone (O3), the gas such as active gases).
The depositing device 500 of the first configuration shown in Fig. 5 is configurable to the deposition of first layer stacking, and first layer stacks Including transparent insulating layer (such as Nb2O5With SiO2Layer) and at least one ITO layer.Stacked to deposit first layer, pending base Plate is inserted into ingress load locking cavity 511, and can be transmitted by processing chamber housing 512~516 to be deposited in surface Transparent insulating layer, such as Nb2O5Layer and SiO2Layer.Afterwards, substrate enter transfer chamber 530, substrate in chamber 530 is transferred from First substrate support member 560 is transferred to second substrate support member 561.Then, in order to deposit at least one ITO layer, have thereon Treated transparent insulating layer (such as Nb2O5Layer and SiO2Layer) substrate be inserted into Part II 540, at the particularly the 6th Manage in chamber 541.Board transport is by processing chamber housing 541~545, to deposit at least one ITO layer (and optionally at least One metal level).Have what is treated to include transparent insulating layer (such as Nb thereon2O5Layer and SiO2Layer), at least one ITO layer And the substrate that the first layer of optional at least one metal level stacks leaves depositing device by exporting load lock chamber 546 500。
According to some embodiments, the first configuration stacked for depositing above-mentioned first layer, it can for example pass through mobile or rotation Turn one or more sedimentary origin support members of two or more deposition source components, change over deposition second layer stacking second is matched somebody with somebody Put.In the example of hgure 5, in order to which from the first configuration change to the second configuration, first to the 6th deposits each in source component The rotatable about 180 degree of sedimentary origin support member.The depositing device 500 of second configuration is configurable to the deposition of second layer stacking, the Two layers of stacking include such as Summoning and stack the metal levels of (such as Summoning bridge or Summoning net) and optionally include At least one tco layer (such as indium tin oxide (ITO) layer).
Stacked to deposit the second layer, pending substrate is inserted into ingress load locking cavity 511, and can be transmitted It is such as at least one by processing chamber housing 512~516 with least one the first metal layer that deposited metal layer stacks on substrate MoNbOxNyLayer.Afterwards, substrate enters transfer chamber 530, and substrate shifts in chamber 530 is transferred from first substrate support member 560 To second substrate support member 561.Then, the substrate for having treated at least one the first metal layer thereon is inserted into second Divide in 540, in particularly the 6th processing chamber housing 541.Board transport is stacked by processing chamber housing 541~545 with deposited metal layer At least one second metal layer (such as at least one aluminium lamination and/or at least one AlNd layers) and metal layer stack at least one Individual 3rd metal level (such as Mo or MoNb layers).There is the substrate that the treated second layer stacks thereon by exporting load-lock Chamber 546 leaves depositing device 500.
According to disclosure another aspect, propose that a kind of deposition first layer on the first substrate that is used for stacks and in the second base The depositing device that the second layer stacks is deposited on plate, wherein the second layer, which stacks, is different from first layer stacking.The depositing device includes two Individual or more processing chamber housing, substrate support and two or more deposition source components, two or more processing chamber housings Including the first processing chamber housing and second processing chamber, substrate support extends at least through the first processing chamber housing and second processing chamber Room, two or more deposition source components include the first deposition source component and second processing chamber in the first processing chamber housing In second deposition source component.Each of two or more deposition source components include at least one sedimentary origin support member And separates walls, sedimentary origin support member are configured to support at least one first sedimentary origin and at least one process unit, wherein this is extremely A few process unit includes at least one of at least one second sedimentary origin, heater and sedimentary origin adjusting means, point It is configured at least one first sedimentary origin is separated with least one process unit from wall.At least one sedimentary origin support member It is configured at least be moveable between the first location and the second location.In first position, the first sedimentary origin orientation direction Substrate support, and in the second position, at least one process unit is orientated towards substrate support.
According to some embodiments, each of the first deposition source component and the second deposition source component include at least one first Sedimentary origin and at least one process unit, and wherein in first position, the first sedimentary origin is orientated towards substrate, in the second place In, at least one process unit is orientated towards substrate.
According to some embodiments, the disclosure proposes that one kind is configured to the upset source class with sedimentary origin (such as sedimentation unit) The depositing device of type device configuration, it can change sedimentary origin/deposition material in processing chamber housing (such as sedimentation unit) in the original location Expect (such as negative electrode/cathode material) so that an inline system can be in the ventilation of relatively low demand or even without ventilation In the case of provide and stack (stacking concept) with two or more layers of different materials.In some embodiments, example Such as it is directed to contact panel, the system can produce the invisible ITO of pattern (" invisible ITO ") from 3 stacked in multi-layers are supplied to A configuration conversion, conversion or upset to the metal stack for providing electrically conductive anti-reflective layer, being stacked followed by such as " Summoning " Another configuration.Such metal stack can be used for low reflection, invisible " Summoning bridge " (to be used for external hanging touch-control screen face The OGS/TOL concepts of plate (TSP)), and can contact for the outer of the touch-screen panel scheme based on external hanging type TSP wire nettings Plain conductor.Reduce e.g., from about 45% space generally, due to depositing device, for all gases with space-consuming The adjacent process of separation and for the processing chamber housing continuously placed, this concept can be helpful.Also, conversion can be used for Adjustment or the configuration for changing depositing device, and reduce the quantity of power supply, i.e., extra power supply need not be provided again.
According to the disclosure, depositing device is multi-functional, and only provides a depositing device for multiple pileup concept.This is heavy Product equipment is simple, and allows the rapid translating between stacking to be deposited.Depositing device can support from invisible ITO ( Including Summoning bridge) to projecting type capacitor touch-control (Projected Capacitive Touch, PCT) touch screen of Summoning net Curtain panel technology evolution.The embodiment of offer can be applied to provide a series of various different materials (such as different metal and gold Belong to oxide) layer system.Also, it is possible that easily and rapidly conversion in situ is completed between sedimentary origin (such as negative electrode) 's.The embodiment of offer can be applied to/be adjusted to different platform configurations, such as depending on layer stacks concept.The disclosure is for example The simple and processing chamber housing of fast exchange available for sedimentary origin or deposition source material.Customer can be in product development stage by flexibility Instrument supports that the compliant tool can also be used for being changed into a large amount of manufactures (High Volume Manufacturing, HVM).
Although the above is directed to embodiment of the disclosure, can in the case of the base region without departing substantially from the disclosure, Other and further embodiment, the scope of the present disclosure for designing the disclosure are determined by appended claims.

Claims (20)

1. a kind of depositing device being used in depositing materials on substrates, including：
Two or more processing chamber housings, including the first processing chamber housing and second processing chamber；
Substrate support, extend at least through first processing chamber housing and the second processing chamber；And
Two or more deposition source components, including the first deposition source component and the second deposition source component, first sedimentary origin For component in first processing chamber housing, described second deposits source component in the second processing chamber,
Each of wherein described two or more deposition source components includes：
At least one sedimentary origin support member, configure to support at least one first sedimentary origin and at least one process unit,
Wherein described at least one sedimentary origin support member be configured at least be between the first location and the second location it is moveable, And
Wherein, in the first position, at least one first sedimentary origin is orientated towards the substrate support, and in institute State in the second place, at least one process unit is orientated towards the substrate support.
2. depositing device as claimed in claim 1, wherein at least one process unit includes at least one second deposition At least one of source, heater and sedimentary origin adjusting means.
3. depositing device as claimed in claim 1, wherein at least one sedimentary origin support member be configured to around it is described extremely The rotary shaft of a few sedimentary origin support member is rotatable.
4. depositing device as claimed in claim 3, wherein the rotary shaft is substantially perpendicular to the transmission direction of the substrate.
5. the depositing device as described in one in Claims 1-4, wherein described two or more deposition source components is extremely Few deposition source component includes separates walls.
6. depositing device as claimed in claim 5, wherein the separates walls are configured to make at least one sedimentary origin group At least one first sedimentary origin of part separates with least one process unit.
7. depositing device as claimed in claim 5, wherein the separates walls are configured to make described two or more processing chambers At least one processing chamber housing of room is separated into first chamber part and second chamber part, wherein at least one sedimentary origin group Part is arranged at least one processing chamber housing of described two or more processing chamber housings.
8. depositing device as claimed in claim 6, wherein the separates walls are configured to make described two or more processing chambers At least one processing chamber housing of room is separated into first chamber part and second chamber part, wherein at least one sedimentary origin group Part is arranged at least one processing chamber housing of described two or more processing chamber housings.
9. depositing device as claimed in claim 7, wherein the separates walls are configured to the gas-tight seal first chamber part To completely cut off with the second chamber part.
10. depositing device as claimed in claim 5, wherein the separates walls are configured to gas separation shielding.
11. the depositing device as described in one in Claims 1-4, wherein at least one sedimentary origin support member configuration Into supporting at least one first sedimentary origin and include at least one technique of at least one second sedimentary origin Device, at least one first sedimentary origin have the first deposition materials, and at least one second sedimentary origin has second to sink Product material, wherein first deposition materials are different from second deposition materials.
12. depositing device as claimed in claim 11, wherein described two or more deposition source components is at least one heavy Product source component includes separates walls, wherein the separates walls are configured to make described at least one to deposit at least one the of source component One sedimentary origin separates with least one process unit, wherein the separates walls are configured to make described two or more processing chamber housings At least one processing chamber housing be separated into first chamber part and second chamber part, wherein at least one deposition source component It is arranged at least one processing chamber housing of described two or more processing chamber housings, wherein the separates walls are configured to gas The first chamber part is sealed to completely cut off with the second chamber part, and wherein described separates walls are configured to gas point Off screen is covered.
13. the depositing device as described in one in Claims 1-4, wherein described two or more processing chamber housings includes One or more further processing chamber housings, wherein at least one further deposit source component be arranged on it is one or more In at least one of further processing chamber housing.
14. depositing device as claimed in claim 13, wherein described two or more deposition source components is at least one heavy Product source component includes separates walls, wherein the separates walls are configured to make described at least one to deposit at least one the of source component One sedimentary origin separates with least one process unit, wherein the separates walls are configured to make described two or more processing chamber housings At least one processing chamber housing be separated into first chamber part and second chamber part, wherein at least one deposition source component It is arranged at least one processing chamber housing of described two or more processing chamber housings, wherein the separates walls are configured to gas The sealing first chamber part with the second chamber part to completely cut off, wherein the separates walls are configured to gas separation screen Cover, and wherein described at least one sedimentary origin support member is configured to support at least one first sedimentary origin and including institute At least one process unit of at least one second sedimentary origin is stated, at least one first sedimentary origin has the first deposition Material, at least one second sedimentary origin have the second deposition materials, wherein first deposition materials are heavy with described second Product material is different.
15. the depositing device as described in one in Claims 1-4, the depositing device is configured to deposition at least first layer Stack and the second layer stacks.
16. depositing device as claimed in claim 15, wherein the second layer, which stacks, is different from first layer stacking.
17. depositing device as claimed in claim 16, wherein described two or more deposition source components is at least one heavy Product source component includes separates walls, wherein the separates walls are configured to make described at least one to deposit at least one the of source component One sedimentary origin separates with least one process unit, wherein the separates walls are configured to make described two or more processing chamber housings At least one processing chamber housing be separated into first chamber part and second chamber part, wherein at least one deposition source component It is arranged at least one processing chamber housing of described two or more processing chamber housings, wherein the separates walls are configured to gas The sealing first chamber part with the second chamber part to completely cut off, wherein the separates walls are configured to gas separation screen Cover, wherein at least one sedimentary origin support member be configured to support at least one first sedimentary origin and including it is described extremely At least one process unit of few second sedimentary origin, at least one first sedimentary origin have the first deposition material Material, at least one second sedimentary origin have the second deposition materials, wherein first deposition materials and the described second deposition Material is different, and wherein described two or more processing chamber housings includes one or more further processing chamber housings, Wherein at least one further deposits at least one that source component is arranged in one or more further processing chamber housing In person.
18. depositing device as claimed in claim 16, the depositing device, which is configured to deposit the first layer, to be stacked, described the One layer of stacking includes indium tin oxide, NbyOx、Nb2O5、SiO2、TiO2And/or at least one of metal, and/or the deposition Device configuration stacks into the second layer is deposited, and the second layer, which stacks, includes at least one of the following：MoNbOxNy、 One or more of Al, AlNd, MoNb and Mo and/or Al alloy.
19. depositing device as claimed in claim 18, wherein the metal is at least one of Al, Mo and Cu.
20. a kind of be used to deposit the deposition that first layer stacks and deposits second layer stacking on second substrate on the first substrate Equipment, wherein the second layer, which stacks, is different from first layer stacking, the depositing device includes：
Two or more processing chamber housings, including the first processing chamber housing and second processing chamber；
Substrate support, extend at least through first processing chamber housing and the second processing chamber；And
Two or more deposition source components, including the first deposition source component and the second deposition source component, first sedimentary origin For component in first processing chamber housing, described second deposits source component in the second processing chamber,
Each of wherein described two or more deposition source components includes：
At least one sedimentary origin support member, configure to support at least one first sedimentary origin and at least one process unit, wherein At least one process unit includes at least one at least one second sedimentary origin, heater and sedimentary origin adjusting means Person；And
Separates walls, it is configured to separate at least one first sedimentary origin and at least one process unit,
Wherein described at least one sedimentary origin support member be configured at least be between the first location and the second location it is moveable, And
Wherein, in the first position, at least one first sedimentary origin is orientated towards the substrate support, and in institute State in the second place, at least one process unit is orientated towards the substrate support.
CN201490001446.XU 2014-05-20 2014-05-20 For the equipment in depositing materials on substrates Expired - Fee Related CN206858652U (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2014/060360 WO2015176751A1 (en) 2014-05-20 2014-05-20 Deposition apparatus for deposition of a material on a substrate and method for depositing a material on a substrate

Publications (1)

Publication Number Publication Date
CN206858652U true CN206858652U (en) 2018-01-09

Family

ID=50842241

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201490001446.XU Expired - Fee Related CN206858652U (en) 2014-05-20 2014-05-20 For the equipment in depositing materials on substrates

Country Status (4)

Country Link
KR (1) KR20170000328U (en)
CN (1) CN206858652U (en)
TW (1) TW201610196A (en)
WO (1) WO2015176751A1 (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003141719A (en) * 2001-10-30 2003-05-16 Anelva Corp Sputtering device and thin film forming method
EP2216831A1 (en) * 2009-02-05 2010-08-11 Applied Materials, Inc. Modular PVD system for flex PV

Also Published As

Publication number Publication date
KR20170000328U (en) 2017-01-24
WO2015176751A1 (en) 2015-11-26
TW201610196A (en) 2016-03-16

Similar Documents

Publication Publication Date Title
CN102881839B (en) Organic light emitting diode, touch display device and manufacture methods thereof
EP2831708B1 (en) Transparent body for use in a touch panel and its manufacturing method and apparatus
CN104205021B (en) Transparent body for use in a touch screen panel manufacturing method and system
CN108026627A (en) Shadow mask for Organic Light Emitting Diode manufacture
Kim et al. Flexible OLED fabrication with ITO thin film on polymer substrate
CN105637452A (en) Transparent body for a touch panel manufacturing method and system for manufacturing a transparent body for a touch screen panel
CN107403883A (en) The method for packing of OLED display panel
CN104752345B (en) Thin-film transistor array base-plate and preparation method thereof
CN103403847A (en) Silicon nitride film deposition method, organic electronic device manufacturing method, and silicon nitride film deposition device
CN107104150A (en) Metal oxide TFT devices and preparation method thereof
CN206624912U (en) For the precipitation equipment in depositing materials on substrates
CN206858652U (en) For the equipment in depositing materials on substrates
CN103839865B (en) Manufacturing method of touch device
CN108365118A (en) Flexible Displays module
CN203021646U (en) Dumbbell-style flexible material magnetron sputtering film-coating device
CN206292757U (en) A kind of organic EL display panel and display device
CN106990864A (en) A kind of OLED contact panels and preparation method thereof, display device
CN104409139B (en) Transparent conducting structures and the capacitive touch screen comprising the transparent conducting structures
CN107632731A (en) The manufacture method and contact panel of contact panel
CN107430466A (en) Layered system for touch panel, for touch panel layered system manufacture method and touch panel
CN101255543A (en) Film formation substrate and film formation device
CN107250965A (en) The manufacture method of the layer stacking, electrooptical device and the layer stacking being suitable for use in electrooptical device that are suitable for use in electrooptical device
CN205099749U (en) Modular successive sedimentation system
CN105278736A (en) Transparent conductive substrate, method for manufacturing transparent conductive substrate and touch panel
CN107863182A (en) A kind of touch-screen double-deck ITO conductive films and preparation method thereof

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20180109

Termination date: 20200520