KR20170000214A - Light Emitting Device and Method for the same - Google Patents

Abstract

According to an embodiment, disclosed are a light emitting device and a manufacturing method thereof. The light emitting device comprises: a conductive base layer; an insulation film arranged on the base layer wherein the insulation film includes a plurality of first holes; a plurality of light emitting structures including a first semiconductor core, an active layer, and a second semiconductor layer wherein the first semiconductor core is electrically connected to the base layer through the first holes and the active layer is arranged on the first semiconductor core; an insulation particle layer including insulation particles filling the gap between the plurality of light emitting structures; and a first conductive layer arranged on the insulation particle layer. Diameters of the insulation particles are smaller than widths of the first holes.

Description

Technical Field [0001] The present invention relates to a light emitting device,

The embodiments relate to a light emitting device and a manufacturing method thereof.

A light emitting device (LED) is a compound semiconductor device that converts electric energy into light energy. By controlling the composition ratio of the compound semiconductor, various colors can be realized.

The nitride semiconductor light emitting device has advantages of low power consumption, semi-permanent lifetime, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps. Accordingly, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, a white light emitting diode lighting device capable of replacing a fluorescent lamp or an incandescent lamp, And traffic lights.

Recently, a light emitting device using vertically grown nanostructures has been developed. Such a nanostructure can emit light from the front surface, thereby widening the light emitting area.

However, there is a problem that a current is concentrated at the lower end portion of the nanostructure and a leakage current is generated. Also, there is a problem that leakage current is generated in an un-grown region of a nano structure or a broken region of a nano structure, thereby deteriorating electrical characteristics.

The embodiment provides a light emitting device capable of reducing a leakage current.

The problems to be solved in the embodiments are not limited to these, and the objects and effects that can be grasped from the solution means and the embodiments of the problems described below are also included.

A light emitting device according to an embodiment includes a conductive base layer; An insulating layer disposed on the base layer and including a plurality of first holes; A plurality of light emitting structures including a first semiconductor core electrically connected to the base layer through the first hole, an active layer disposed on the first semiconductor core, and a second semiconductor layer; An insulating particle layer including insulating particles filled between the plurality of light emitting structures; And a first conductive layer disposed on the insulating particle layer, wherein a diameter of the insulating particle is smaller than a width of the first hole.

At least one of the plurality of first holes may be filled with the insulating particles.

The width of the first hole may be 0.5 탆 or more and 3 탆 or less.

The diameter of the insulating particles may be 150 nm or more and 500 nm or less.

The thickness of the insulating particle layer may be 400 nm or more and 1000 nm or less.

The material of the insulating film and the material of the insulating particles may be different.

The insulating particles may include first insulating particles having a first diameter and second insulating particles having a second diameter, and the second diameter may be larger than the first diameter.

The insulating particle layer may include a lower insulating particle layer including first insulating particles, and an upper insulating particle layer including the second insulating particles.

The first insulating particles may be filled in at least one of the plurality of first holes.

The first insulating particles and the second insulating particles may be randomly dispersed in the insulating particle layer.

And a surface treatment layer formed on the second semiconductor layer.

The surface treatment layer may include a silane-based material.

According to an embodiment of the present invention, a method of manufacturing a light emitting device includes: forming an insulating layer having a plurality of first holes on a conductive base layer; Growing a light emitting structure including a first semiconductor core, an active layer, and a second semiconductor layer on the first hole; Forming an insulating particle layer between the light emitting structures; And forming a conductive layer on the insulating particle layer and the light emitting structure.

In the step of forming the insulating particle layer, insulating particles having a diameter smaller than the width of the first hole may be formed between the light emitting structures.

The material of the insulating film and the material of the insulating particles may be different.

The insulating particles may include first insulating particles having a first diameter and second insulating particles having a second diameter, and the second diameter may be larger than the first diameter.

According to the embodiment, the leakage current is reduced and a light emitting device having excellent electrical characteristics can be manufactured.

The various and advantageous advantages and effects of the present invention are not limited to the above description, and can be more easily understood in the course of describing a specific embodiment of the present invention.

1 is a conceptual diagram of a light emitting device according to an embodiment of the present invention,
2 is a view for explaining a path in which a leakage current is generated,
3 is a photograph showing a first leakage path occurring at the lower end of the light emitting structure,
4 is a photograph showing a second leakage path occurring in a region where a light emitting structure is partially formed,
5 is a photograph showing a third leakage path generated by the pinhole of the insulating film,
FIG. 6 is a view showing a state where an insulating particle layer is disposed between the light emitting structures of FIG. 1, and FIG.
FIG. 7 is a photograph showing a state where an insulating particle layer is disposed between the light emitting structures of FIG. 1, and FIG.
8 is a view showing a state in which an insulating particle layer is disposed between light emitting structures of various shapes,
9 is a photograph showing a state in which an insulating particle layer is disposed between light emitting structures of various shapes,
FIG. 10 is a view showing a state where insulating particles having different sizes are arranged between the light emitting structures of FIG. 1, and FIG.
FIG. 11 is a photograph showing a state where insulating particles having different sizes are arranged between the light emitting structures of FIG. 1,
FIG. 12 is a view showing a state where insulating particles having different sizes are randomly arranged between the light emitting structures of FIG. 1, and FIG.
FIG. 13 is a view showing a state where insulating particles having different materials are randomly arranged between the light emitting structures of FIG. 1, and FIG.
FIG. 14 is a view showing a state where insulating particles having different shapes are randomly arranged between the light emitting structures of FIG. 1, and FIG.
15 is a view showing a state where a surface layer is formed on the light emitting structure of FIG. 1,
FIG. 16 is a view showing a state where an insulating particle layer is formed between the surface-treated light emitting structures of FIG. 15, and FIG.
17A to 17F are views for explaining a method of manufacturing a light emitting device according to an embodiment of the present invention.

While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that the embodiments of the present invention are not intended to be limited to the specific embodiments but include all modifications, equivalents, and alternatives falling within the spirit and scope of the embodiments.

Terms including ordinals, such as first, second, etc., may be used to describe various elements, but the elements are not limited to these terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the embodiments, the second component may be referred to as a first component, and similarly, the first component may also be referred to as a second component. And / or < / RTI > includes any combination of a plurality of related listed items or any of a plurality of related listed items.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the embodiments of the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprises" or "having" and the like are used to specify that there is a feature, a number, a step, an operation, an element, a component or a combination thereof described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

In the description of the embodiments, in the case where one element is described as being formed "on or under" another element, the upper (upper) or lower (lower) or under are all such that two elements are in direct contact with each other or one or more other elements are indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings, wherein like or corresponding elements are denoted by the same reference numerals, and redundant description thereof will be omitted.

1 is a conceptual diagram of a light emitting device according to an embodiment of the present invention.

1, a light emitting device according to an embodiment of the present invention includes a conductive base layer 131 on a substrate 110, an insulating layer 120 including a plurality of first holes W, A light emitting structure 130, an insulating particle layer 140 disposed between the plurality of light emitting structures 130, and a first conductive layer 150 disposed on the insulating particle layer 140.

The substrate 110 may comprise a conductive substrate or an insulating substrate. The substrate 110 may be a material suitable for semiconductor material growth or a carrier wafer. The substrate 110 may be formed of a material selected from the group consisting of sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge.

The conductive base layer 131 may be formed on the substrate 110 and provide a growth surface of the light emitting structure 130. In addition, the base layer 131 may be electrically conductive to electrically connect the first electrode 171 and the light emitting structure 130. The base layer 131 may have the same composition as the first semiconductor core 132, but is not limited thereto. The base layer 131 may be doped with an n-type dopant such as Si, Ge, Sn, Se or Te, but is not limited thereto.

The insulating film 120 is disposed on the conductive base layer 131. The insulating layer 120 includes a plurality of first holes W to which the base layer 131 and the light emitting structure 130 are electrically connected. The plurality of first holes W may be formed by a mask pattern. Insulating film 120 may include an insulating material such as SiO ₂ or SiNx, but not limited thereto.

The plurality of light emitting structures 130 includes a first semiconductor core 132 electrically connected to the base layer 131 through a first hole W, an active layer 134 formed on the first semiconductor core 132, And a second semiconductor layer 133 formed on the active layer 134. The light emitting structure 130 grows in a direction substantially perpendicular to the substrate 110, and may have a nano-sized size. Light emitted from the light emitting structure 130 may be emitted in the substrate direction and / or in the opposite direction.

The first semiconductor core 132 may grow on the surface of the base layer 131 exposed by the first hole W. [ The first semiconductor core 132 may be a nano-rod, but is not limited thereto. The first semiconductor core 132 may be a compound semiconductor such as a III-V group or a II-VI group, and the first semiconductor core 132 may be doped with a first dopant. The first semiconductor core 132 is a semiconductor material having a composition formula of In _{x 1} Al _{y 1} Ga ₁ -x ₁ -y1 N (0? _{X1? 1} , 0 _{? Y1? 1} , 0? X1 + _{y1? 1} ) GaN, AlGaN, InGaN, InAlGaN, and the like. The first dopant may be an n-type dopant such as Si, Ge, Sn, Se, or Te. When the first dopant is an n-type dopant, the first semiconductor core 132 doped with the first dopant may be an n-type semiconductor.

The active layer 134 is grown on the insulating film 120 and disposed on the first semiconductor core 132. The active layer 134 is a layer where electrons (or holes) injected through the first semiconductor core 132 and holes (or electrons) injected through the second semiconductor layer 133 meet. As the electrons and the holes are recombined, the active layer 134 transits to a low energy level and can generate light having a wavelength corresponding thereto. There is no limitation on the emission wavelength in this embodiment.

The active layer 134 may have any one of a single well structure, a multiple well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, Is not limited thereto.

The active layer 134 may have a structure in which a plurality of well layers and barrier layers are alternately arranged. The well layer and the barrier layer may have a composition formula of InxAlyGa1-x-yN (0? X? 1, 0? Y? 1, 0? X + y? 1), and the energy band gap of the barrier layer Band gap.

The second semiconductor layer 133 is grown on the insulating film 120 and disposed on the active layer 134. The second semiconductor layer 133 may be formed of a compound semiconductor such as group III-V or II-VI, and the second semiconductor layer 133 may be doped with a second dopant. A second semiconductor layer 133 is a semiconductor material having a compositional formula of _{In x5 Al y2 Ga 1 -x5- y2} N (0≤x5≤1, 0≤y2≤1, 0≤x5 + y2≤1) or AlInN, AlGaAs , GaP, GaAs, GaAsP, and AlGaInP. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second semiconductor layer 133 doped with the second dopant may be a p-type semiconductor.

An electron blocking layer (EBL) may be disposed between the active layer (134) and the second semiconductor layer (133). The electron blocking layer may be formed of a semiconductor material having a composition formula of In _{x 1} Al _{y 1} Ga _{1 -x 1 -y 1} N (0? _{X 1 ? 1} , 0? _{Y 1 ? 1} , 0? _{X 1 + y 1 ? 1} ), for example, AlGaN, InGaN, InAlGaN, and the like, but is not limited thereto.

The conductive layer 150 is disposed on the insulating particle layer 140 and the light emitting structure 130. The conductive layer 150 may electrically connect the second electrode 172 and the second semiconductor layer 133. The first electrode 171 may be disposed on the exposed base layer 131 to be electrically connected to the first semiconductor core 132.

The insulating particle layer 140 may be filled between the plurality of light emitting structures 130 to support the light emitting structures 130 and electrically insulate the same.

FIG. 3 is a photograph showing a first leakage path occurring at the lower end of the light emitting structure, FIG. 4 is a cross-sectional view illustrating a second leakage path occurring in a region where a light emitting structure is partially formed, And FIG. 5 is a photograph showing a third leakage path caused by the pinhole of the insulating film.

Referring to FIGS. 2 to 5, three types of leakage paths can be largely formed in the light emitting device including the nano-light emitting structure 130. The first leakage path D1 may occur at the lower end of the light emitting structure 130. A current densification phenomenon occurs at the lower end of the light emitting structure 130. Therefore, a current leakage path occurs in the current density region. The size of the current density region may be 300 to 500 nm.

The second leakage path D2 may occur in a region where the light emitting structure 130 is not formed and the light emitting structure 130 is broken. The light emitting structure 130 may be controlled to be formed in each of the plurality of first holes W. However, the light emitting structure 130 may not be grown in some of the first holes W for various reasons. Also, due to the large aspect ratio, the light emitting structure 130 may break during growth.

The third leakage path D3 may be caused by a defect formed on the insulating film 120. [ If the film quality of the insulating layer 120 for growing the light emitting structure 130 is lowered, the pinhole d4 may be generated in the high temperature / high pressure nano structure growth environment and the current may leak. The width of the pinhole d4 may be 50 to 100 nm.

FIG. 6 is a view showing a state where an insulating particle layer is disposed between the light emitting structures of FIG. 1, and FIG. 7 is a photograph showing a state where an insulating particle layer is disposed between the light emitting structures of FIG.

Referring to FIGS. 6 and 7, the insulating particle layer 140 may isolate the plurality of light emitting structures 130 to block the first leakage path and the third leakage path. The thickness of the insulating particle layer 140 may be 400 nm or more and 1000 nm or less. If the thickness is less than 400 nm, a dislocation formed during the regeneration of the light emitting structure 130 may contact with the conductive layer 150 or the base layer 131, and a leakage current may be generated. If the thickness exceeds 1000 nm, the light emitting area of the side surface (m-plane) of the light emitting structure 130 may be excessively reduced, and the light emitting efficiency may be reduced.

In addition, the insulating particle layer 140 may fill the first hole W in which the light emitting structure 130 is not formed, thereby blocking the leakage path. For this, the insulating particle layer 140 may be applied after the light emitting structure 130 is formed, and the size of the insulating particle layer 140 may be smaller than the width of the first hole W. [ Since the width of the first hole W can be controlled to be 0.5 mu m or more and 3 mu m or less, the diameter of the insulating particles P is preferably at least 0.5 mu m or less.

At this time, the diameter of the insulating particles (P) may be 150 nm or more and less than 500 nm. If the diameter is less than 150 nm, the insulating particles P may adhere to the upper end of the light emitting structure 130, resulting in a decrease in luminous efficiency. That is, when the diameter is less than 150 nm, the attracting force of the light emitting structure 130 and the insulating particles P is stronger than the attractive force between the insulating particles P, and uniform application to the lower end of the light emitting structure 130 may be difficult.

If the diameter exceeds 500 nm, there is a problem that the gap between the insulating particles P becomes large and the conductive layer 150 penetrates to the lower end of the light emitting structure 130 when the conductive layer 150 is formed. When the diameter of the insulating particles P is 200 nm to 400 nm, the problems listed can be solved more effectively.

Since the insulating particle layer 140 has voids between the insulating particles P, the insulating layer 120 can have a light extracting effect. That is, light generated from the side surface of the light emitting structure 130 covering the insulating particle layer 140 may be scattered in the insulating particle layer 140 and may be emitted to the outside. Therefore, the luminous efficiency can be improved. The porosity may be from about 0.2 to about 0.3, but is not limited thereto.

FIG. 8 is a view showing a state where an insulating particle layer is disposed between light emitting structures having various shapes, and FIG. 9 is a photograph showing a state where an insulating particle layer is disposed between light emitting structures having various shapes.

Referring to FIGS. 8 and 9, the light emitting structure 130 may have various shapes. Depending on the growth conditions, it may include both a pyramid shape, a nanorod shape, and a flat top shape. At this time, the insulating particle layer 140 may be formed as an insulating film. There is no limitation on the method of forming the insulating film. Exemplary methods include PVD techniques such as sputtering, E-beam evaporation, thermal evaporation, pulsed laser deposition, and laser molecular beam epitaxy And CVD processes such as MOCVD, HVPE, ALD, PECVD, LPCVD, and APCVD can all be applied.

FIG. 10 is a view showing a state where insulating particles having different sizes are arranged between the light emitting structures of FIG. 1, FIG. 11 is a photograph showing a state where insulating particles having different sizes are arranged between the light emitting structures of FIG. 1, Is a view showing a state where insulating particles having different sizes are randomly arranged between the light emitting structures of FIG.

10 and 11, the insulating particle layer 140 may include a first insulating particle P1 having a first diameter and a second insulating particle P2 having a second diameter. At this time, the second diameter may be larger than the first diameter. The first insulating particles P1 may constitute a lower insulating particle layer, and the second insulating particles P2 may constitute an upper insulating particle layer.

According to such a configuration, the first insulating particles P1 having a small diameter are densely packed in the first holes W to effectively block the second leakage path. In addition, the second insulating particles P2 having a relatively large diameter can emit light emitted from the side surface of the light emitting structure 130 to the outside.

Referring to FIG. 12, the first insulating particles P1 and the second insulating particles P2 may be randomly dispersed. In this case, the two types of insulating particles P1 and P2 having different sizes are dispersed to reduce porosity. Therefore, the first to third leakage paths can be effectively blocked.

FIG. 13 is a view showing a state where insulating particles having different materials are randomly arranged between the light emitting structures of FIG. 1, FIG. 14 is a view showing a state where insulating particles having different shapes are randomly arranged between the light emitting structures of FIG. to be.

Referring to Figure 13, the material is a plurality of insulating particles (P3, P4) different from the _{SiO 2, Si 3 N 4,} Al 2 O 3, ZrSiO 4, HfSiO 4, ZrO 2, HfO 2, La 2 O 3, Ta ₂ O ₅ , and TiO ₂ . Accordingly, insulating materials having different effects can be mixed. For example, SiO ₂ excellent in electrical insulation and Al ₂ O ₃ having excellent reflectivity can be used to improve electrical insulation and light extractability at the same time.

Referring to FIG. 14, the shapes of the insulating particles P3, P4, and P5 may be different from each other. The shapes of the insulating particles P3, P4, and P5 are not particularly limited. The shape of the insulating particles P3, P4 and P5 may be a spherical shape, a rod-like shape, a polygonal shape, a polyhedral shape, a branched shape, a complex shape, A polygonal shape, and the like can be applied in various ways.

FIG. 15 is a view showing a state where a surface layer is formed on the light emitting structure of FIG. 1, and FIG. 16 is a view showing a state where an insulating particle layer is formed between the surface treated light emitting structures of FIG.

Referring to FIGS. 15 and 16, a surface layer 135 may be further formed on the light emitting structure 130. The GaN semiconductor is exposed to air and has a Ga ₂ O ₃ layer with a thickness of several tens nm. Since the Ga ₂ O ₃ layer is hydrophilic, the attractive force with the insulating particles becomes stronger. Therefore, when the insulating particle layer is formed, most of the insulating particles adhere to the light emitting structure 130, which makes uniform coating difficult.

When the surface treatment material is applied to the light emitting structure 130, the surface layer 135 has a hydrophobic property. Therefore, the attracting force with the insulating particles P having a hydrophilic surface becomes weak, and a uniform insulating particle layer 140 can be formed. That is, the attractive force between the insulating particles P is greater than the attractive force between the insulating particles P and the light emitting structure 130, and uniform coating can be made. In addition, the cover layer S having the same composition as that of the surface layer 135 may be formed in the first hole W to enable uniform coating of the insulating particles.

The surface treatment material may be selected from various materials capable of imparting hydrophobicity. As an example, it may include a silane-based material or an organic silane compound. The surface treatment material may include at least one selected from heptadecafluorodecyltrimethoxysilane (PFAS), octadecyldimethylchlorosilane, octadecyltrichlorosilane (OTS), tris (trimethylsiloxy silylethyl-dimethylchlorosilane, octyl dimethylchlorosilane, dimethyldichlorosilane, butyl dimethyl chlorosilane and trimethylchlorosilane.

17A to 17F are views for explaining a method of manufacturing a light emitting device according to an embodiment of the present invention.

Referring to FIG. 17A, a conductive base layer 131 is formed on a substrate 110. The substrate 110 may be formed of a material selected from the group consisting of sapphire (Al 2 O 3), SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge.

The base layer 131 may have the same composition as the first semiconductor core, but is not limited thereto. The base layer 131 may be doped with an n-type dopant such as Si, Ge, Sn, Se or Te, but is not limited thereto.

Referring to FIG. 17B, an insulating layer 120 having a plurality of first holes W is formed on a base layer 131. The insulating film 120 may be selected from a variety of insulating materials such as SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , ZrSiO ₄ , HfSiO ₄ , ZrO ₂ , HfO ₂ , La ₂ O ₃ , Ta ₂ O ₅ and TiO ₂ And the first hole W can be formed with a width of 0.5 m or more and 3 m or less.

Referring to FIG. 17C, a plurality of light emitting structures 130 are grown on the insulating layer 120. As a method of growing the light emitting structure 130, all the conventional semiconductor growth methods can be applied. The first semiconductor core 132 may be grown on the surface of the base layer 131 and the active layer 134 and the second semiconductor layer 133 may be formed thereon. The active layer 134 and the second semiconductor layer 133 may grow on the insulating film 120. [ A mask pattern may be used to grow the light emitting structure 130 as needed.

17D and 17E, a solvent in which insulating particles P are dispersed can be coated on the plurality of light emitting structures 130. [ The solution is not particularly limited.

The dispersion method may be selected from the group consisting of drop-coating, dip coating, spin coating, electrophoretic deposition, self-assembly at the gas / liquid interface, (transfer from the gas / liquid to the gas / solid interface), and spray coating. If a solution is used, the solution may volatilize after coating.

The diameter of the insulating particles (P) may be 150 nm or more and less than 500 nm. Therefore, the diameter of the insulating particles may be smaller than the diameter of the first hole (W). The material of the insulating particles (P) may be different from the material of the insulating film (120), and the size of the insulating particles (P) may also be different. In addition, the insulating particle layer 140 may be formed so that all the features of the insulating particles described above can be applied.

At this time, the light emitting structure 130 may be subjected to surface treatment in advance. As described above, the surface of the light emitting structure becomes hydrophobic by the surface treatment, and uniform coating of the insulating particles (P) can be made possible. A silane-based material or an organic silane compound may be coated on the light-emitting structure 130.

Referring to FIG. 17F, a conductive layer 150 may be formed on the insulating particle layer 140, and a filling layer 160 may be further formed thereon. The filling layer 160 may be an optically transparent layer or an insulating layer. In one example, the fill layer 160 may comprise a spin on glass. The height of the filling layer 160 may be lower than the height of the light emitting structure 130.

The second electrode 172 may be formed on the light emitting structure 130 exposed to the outside of the filling layer 160 and the first electrode 171 may be formed on the partially exposed base layer 131.

The light emitting device of the embodiment further includes optical members such as a light guide plate, a prism sheet, and a diffusion sheet, and can function as a backlight unit. Further, the light emitting element of the embodiment can be further applied to a display device, a lighting device, and a pointing device.

At this time, the display device may include a bottom cover, a reflector, a light emitting module, a light guide plate, an optical sheet, a display panel, an image signal output circuit, and a color filter. The bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit.

The reflector is disposed on the bottom cover, and the light emitting module emits light. The light guide plate is disposed in front of the reflection plate to guide light emitted from the light emitting module forward, and the optical sheet includes a prism sheet or the like and is disposed in front of the light guide plate. The display panel is disposed in front of the optical sheet, and the image signal output circuit supplies an image signal to the display panel, and the color filter is disposed in front of the display panel.

The lighting device may include a light source module including a substrate and a light emitting device of the embodiment, a heat dissipation unit that dissipates heat of the light source module, and a power supply unit that processes or converts an electric signal provided from the outside and provides the light source module . Further, the lighting device may include a lamp, a head lamp, or a street lamp or the like.

It will be apparent to those skilled in the art that various changes, substitutions, and alterations can be made hereto without departing from the spirit and scope of the invention as defined in the appended claims. Will be apparent to those of ordinary skill in the art.

110: substrate
120: insulating film
130: Light emitting structure
131: Base layer
132: first semiconductor core
133: second semiconductor layer
134: active layer
140: insulating particle layer
150: conductive layer
160: filling layer
171: first electrode
172: second electrode

Claims (16)

A conductive base layer;
An insulating layer disposed on the base layer and including a plurality of first holes;
A plurality of light emitting structures including a first semiconductor core electrically connected to the base layer through the first hole, an active layer disposed on the first semiconductor core, and a second semiconductor layer;
An insulating particle layer including insulating particles filled between the plurality of light emitting structures; And
And a first conductive layer disposed on the insulating particle layer,
Wherein a diameter of the insulating particle is smaller than a width of the first hole.
The method according to claim 1,
Wherein at least one of the plurality of first holes is filled with the insulating particles.
The method according to claim 1,
And the width of the first hole is 0.5 占 퐉 or more and 3 占 퐉 or less.
The method of claim 3,
Wherein the diameter of the insulating particles is 150 nm or more and 500 nm or less.
The method according to claim 1,
Wherein the thickness of the insulating particle layer is 400 nm or more and 1000 nm or less.
The method according to claim 1,
Wherein a material of the insulating film and a material of the insulating particle are different.
The method according to claim 1,
Wherein the insulating particles include first insulating particles having a first diameter and second insulating particles having a second diameter, and the second diameter is larger than the first diameter.
8. The method of claim 7,
Wherein the insulating particle layer includes a lower insulating particle layer including first insulating particles, and an upper insulating particle layer including the second insulating particles.
9. The method of claim 8,
Wherein the first insulating particles are filled in at least one of the plurality of first holes.
8. The method of claim 7,
Wherein the first insulating particles and the second insulating particles are randomly dispersed in the insulating particle layer.
The method according to claim 1,
And a surface treatment layer formed on the second semiconductor layer.
12. The method of claim 11,
Wherein the surface treatment layer comprises a silane-based material.
Forming an insulating film having a plurality of first holes on the conductive base layer;
Growing a light emitting structure including a first semiconductor core, an active layer, and a second semiconductor layer on the first hole;
Forming an insulating particle layer between the light emitting structures;
And forming a conductive layer on the insulating particle layer and the light emitting structure.
14. The method of claim 13,
Wherein forming the insulating particle layer comprises:
Wherein an insulating particle having a diameter smaller than the width of the first hole is formed between the light emitting structures.
14. The method of claim 13,
Wherein a material of the insulating film is different from a material of the insulating particles.
14. The method of claim 13,
Wherein the insulating particles include first insulating particles having a first diameter and second insulating particles having a second diameter, and the second diameter is larger than the first diameter.

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