KR20160139691A - Organic Light Emitting Display Device and Method for the Same - Google Patents

Abstract

The present invention relates to an organic light emitting display device particularly securing a high aperture ratio by changing a structure. The organic light emitting display device according to the present invention comprises: a gate line and a data line which intersect; a driving current line which is parallel with the data line; a driving transistor which includes a driving gate electrode separated from the gate line and provided in the same layer, a first active layer overlapped with the driving gate electrode and extending to both sides, a driving source electrode at the overlapped portion of one end of the first active layer and the driving current wiring; and a switching transistor which includes a second active layer overlapped with the switching gate electrode and extending to both sides, a switching source electrode which is positioned at the overlapped portion of one end of the second active layer and the data line, and a switching drain electrode overlapped with the driving gate electrode, and connected to the other end of the second active layer together with the second active layer and the driving gate electrode.

Description

[0001] The present invention relates to an organic light emitting display device and a method of manufacturing the same,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a backplane substrate, and more particularly, to an organic light emitting display device having a high aperture ratio by changing a structure and a method of manufacturing the same.

As portable electronic devices such as mobile communication terminals and notebook computers are developed, there is an increasing demand for flat panel display devices applicable thereto.

Examples of the flat panel display include a liquid crystal display device, a plasma display panel device, a field emission display device, an organic or inorganic light emitting diode display Device) have been studied. Among such flat panel display devices, the organic light emitting display devices are being applied to various fields with the advantages of development of mass production technology, ease of driving means, low power consumption, high image quality, large-screen realization and softening.

In addition, such a flat panel display device has a plurality of pixels in a matrix, and at least one TFT (Thin Film Transistor) capable of controlling each pixel is provided in the pixel.

The thin film transistor is divided into a top gate structure and a bottom gate structure according to the position of the gate electrode.

In a general top gate TFT (Thin Film Transistor), an amorphous layer is first formed on a substrate, and crystallized using an eximer laser to form a polycrystalline silicon. Next, a photosensitive film (not shown) is coated on the crystallized polycrystalline silicon, the photosensitive film is exposed and developed to form a photosensitive film pattern, and the polycrystalline silicon is etched using the photosensitive film pattern as a mask, Leaving an active layer. A gate insulating film is formed to cover the active layer, and a gate electrode is formed on the gate electrode to correspond to the upper portion of the active layer.

The TFT of the bottom gate structure reverses the above-described top gate structure, the order of forming the active layer and the gate electrode.

However, the crystallization process for polycrystallizing amorphous silicon proceeds at a temperature of 400 ° C or higher. In this process, in the bottom gate structure, a mass flow phenomenon occurs due to the mass flow phenomenon. Particularly, This phenomenon was severe in the tapered portion, and there was a problem in the active layer disconnection at the boundary between the flat portion on the gate electrode and the inclined portion on the taper side of the gate electrode.

Therefore, in recent display devices, a TFT of a top gate structure in which a gate electrode is formed after crystallization is completed is preferred so as to prevent such an active layer disconnection problem.

Hereinafter, a pixel structure of a general organic light emitting display will be described with reference to the drawings.

FIG. 1 is a circuit diagram showing one pixel of a general organic light emitting display device, and FIG. 2 is a cross-sectional view of a driving transistor and a switching transistor of FIG.

1, a general organic light emitting display includes a switching thin film transistor ST, a driving thin film transistor DT connected to the switching thin film transistor ST, and an organic light emitting diode OLED connected to the driving thin film transistor DT. . The switching thin film transistor ST is formed in a region where the gate line GL and the data line DL cross each other and functions to select pixels. 2, the switching thin film transistor ST includes a switching gate electrode SG connected to the gate line GL, a switching source electrode SS branched from the data line DL, Electrode SD and a first active layer 13 in which a switching channel region SA is defined.

In the first active layer 13, a switching channel region is defined in a portion overlapped with the switching gate electrode SG, and the periphery of the switching channel region is doped with an impurity to form a source region 13b and a drain region 13c Function.

On the other hand, the driving thin film transistor DT functions to drive the organic light emitting diode OLED of the pixel selected by the switching thin film transistor ST. The driving thin film transistor DT includes a driving gate electrode DG connected to the switching drain electrode SD of the switching thin film transistor ST, a driving source electrode DS branched from the driving current line VDL, (DD), and a second active layer 12 in which a driving channel region is defined. The driving drain electrode DD of the driving thin film transistor DT is connected to the first electrode of the organic light emitting diode OLED.

The storage capacitor Cst is located between the connection portion of the switching thin film transistor ST and the driving thin film transistor DT and the organic light emitting diode OLED.

2, gate electrodes SG and DG are formed after the first and second active layers 13 and 12 are formed and the gate electrodes SG and DG are used as masks And the channel region is highly dependent on the shape of the gate electrodes SG and DG. Therefore, it is difficult to arbitrarily change or omit the shape of the gate electrodes SG and DG.

1, the connection between the switching thin film transistor ST and the driving thin film transistor DT is established by connecting the switching drain electrode SD and the driving gate electrode DG. In this case, A connection electrode 18 having a long extension of the switching drain electrode SD connected to the drain region 13c of the first active layer 13 is formed and overlapped with the driving gate electrode DG to form the first contact hole 17a. That is, since the connection electrode 18 must have a contact portion with the switching thin film transistor ST and the driving thin film transistor DT, respectively, the area of the connection electrode 18 can not be reduced. The shape of the connecting electrode 18 is a major factor for lowering the aperture ratio of the display device.

SUMMARY OF THE INVENTION It is an object of the present invention to provide an organic light emitting display having a high aperture ratio and a method of manufacturing the same by changing the structure.

According to an aspect of the present invention, there is provided an organic light emitting diode display comprising: a gate line and a data line crossing each other; a driving current line parallel to the data line; A driving transistor having a driving source electrode overlapping the driving gate electrode and extending to both sides and a driving source electrode overlapping one end of the first active layer and the driving current wiring; A second active layer overlapped with the switching gate electrode and extending to both sides of the first active layer; a switching source electrode located at a portion overlapping one end of the second active layer and the data line; Overlaps with the gate electrode and overlaps with the second active layer, the driving gate electrode A switching transistor having a switching drain electrode.

Preferably, the switching drain electrode is connected to the upper portion of the second active layer through the other end of the second active layer, and is connected to a portion of the lower portion of the second active layer.

The plurality of switching gate electrodes may be provided on the gate lines. In this case, on the gate line, the second active layer defines a channel at a position corresponding to the plurality of switching gate electrodes, and may have a doping region around the channel. The second active layer may include a horizontal portion on the gate line, a first vertical portion extending from one side of the horizontal portion and located along the data line, and a second vertical portion extending from the other side of the horizontal portion, And a second vertical portion.

The switching gate electrode may protrude from the gate line and may have a single channel.

In addition to the structure described above, the OLED display of the present invention further includes a driving electrode connected to the other end of the first active layer, a first electrode connected to the drain electrode, an organic light emitting layer on the first electrode, And a second electrode on the organic light emitting layer.

A gate insulating film is provided between the gate line and the drive gate electrode and between the first and second active layers, and an interlayer insulating film is further provided between the first and second active layers and between the data line and the drive current line At this time, the switching drain electrode may vertically penetrate the upper interlayer insulating film and the lower gate insulating film, including the other end of the second active layer, above the interlayer insulating film.

According to another aspect of the present invention, there is provided a method of manufacturing an organic light emitting diode display, including: forming a gate line on a substrate, the gate line including a switching gate electrode and a driving gate electrode spaced apart from the gate line; Forming a gate insulating film on the substrate including the gate line and the driving gate electrode; forming a first active layer overlapping the driving gate electrode and extending to both sides on the gate insulating film; Forming an interlayer insulating film on the gate insulating film including the first and second active layers, forming an interlayer insulating film, a first active layer, , The second active layer, and the gate insulating film are selectively removed so that the first active layer Forming first and second driving contact holes and first and second switching contact holes at both ends of the second active layer and forming first and second switching contact holes at both ends of the first active contact layer through the first driving contact hole and the second driving contact hole, A driving source electrode and a driving drain electrode which are respectively connected to both sides at both ends, a switching source electrode for connecting the second active layer through the first switching contact hole to one side and a second switching layer, And forming a switching drain electrode connected to the driving gate electrode.

The organic light emitting display device according to the present invention has a structure in which the active layer is vertically penetrated and the upper and lower electrodes are connected to each other at a portion where the gate electrode of the driving thin film transistor is connected to one electrode of the other thin film transistor, It is possible to reduce the area occupied by the circuit part and to improve the aperture ratio.

1 is a circuit diagram showing one pixel of a general organic light emitting display device
FIG. 2 is a cross-sectional view of the driving transistor and the switching transistor of FIG.
3 is a plan view showing one pixel of the OLED display according to the first embodiment of the present invention.
4 is a cross-sectional view taken along lines I to I '
5 is a schematic plan view showing a comparison between the organic light emitting display of the present invention and the light emitting portion of a general organic light emitting display
6 is a plan view showing one pixel of the OLED display according to the second embodiment of the present invention.
7 is a cross-sectional view taken along line II-II '
8 is a cross-sectional view showing the light emitting portion of the organic light emitting diode display according to the present invention
9A to 9H are cross-sectional views showing the steps of the method of manufacturing the organic light emitting diode display of the present invention

The reason why the top gate structure is used in a conventional OLED display device is that, in the case of the structure of the bottom gate electrode, an active layer is formed as the taper of the gate electrode is maintained. In the crystallization process, And that disconnection occurs at the gate electrode taper portion to prevent this point.

The applicant of the present invention has filed an application filed with Application No. 10-2015-0067321 for solving the problem of disconnection of the active layer by changing the shape of the gate electrode even when such bottom gate structure is used.

The present invention proposes a structure in which such a bottom gate structure is used and a planar structure is changed to improve the aperture ratio. That is, the gate electrode constituting the side portion is applied to the lower side of the active layer so that the angle formed between the substrate surface and the side of the gate electrode is 50 degrees or less, and the upper structure is changed to improve the aperture ratio I will.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Like reference numerals throughout the specification denote substantially identical components. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In the following description, a detailed description of known technologies or configurations related to the present invention will be omitted when it is determined that the gist of the present invention may be unnecessarily obscured. The component names used in the following description are selected in consideration of easiness of specification, and may be different from the parts names of actual products.

FIG. 3 is a plan view showing one pixel of the OLED display according to the first embodiment of the present invention. FIG. 4 is a cross-sectional view taken along line I-I 'of FIG.

The organic light emitting display according to the first embodiment of the present invention includes a substrate 100 having a plurality of gate lines 110 and data lines 120 intersecting each other in a matrix, 100) for driving the pixels. 3 is a plan view showing a basic structure of a circuit unit according to the first embodiment of the present invention. The structure of the organic light emitting diode connected to the drain electrode of the driving transistor is omitted. The light emitting portion of the organic light emitting diode may be provided on the upper side of the drawing. In some cases, a separate thin film transistor may be further provided in a region between the gate line and the driving gate electrode 115.

The circuit unit may include two thin film transistors of the basic structure of FIG. 1 and one storage capacitor, or may include a storage capacitor or three or more thin film transistors. In either case, when the gate electrode of the driving thin film transistor and one electrode of the other thin film transistor are connected, the following method can be followed.

The organic light emitting diode display according to the first embodiment of the present invention may further include a plurality of driving current lines 130 parallel to the data lines 120 and a plurality of intersections of the gate lines 110 and the data lines 120 A switching thin film transistor ST connected to the driving thin film transistor ST and a driving thin film transistor DT located between the driving current line 130 and the driving thin film transistor ST, DT, and a storage capacitor Cst connected thereto.

Specifically, the driving thin film transistor DT is separated from the gate line and includes a driving gate electrode 115 of the same layer, and a first active layer (second active layer) 112 overlapping the driving gate electrode 115, A driving source electrode DS and a first active layer 150 at the other end of the first active layer 150 and the driving current wiring 130, And a driving drain electrode DD connected to the electrode.

The switching thin film transistor ST includes a switching gate electrode SG and a second active layer 155 overlapping the switching gate electrode SG and extending to both sides of the gate line 110, The switching source electrode SS located at the overlapping portion of one end of the second active layer 155 and the data line 120 and the driving gate electrode 115 DG are overlapped with the other end of the second active layer 155 And a switching drain electrode 160 (SD) connected together with the second active layer 155 and the driving gate electrode 115 at the overlapped portion).

The connection relationship between the driving gate electrode 115 of the first embodiment and the second active layer 155 and the switching drain electrode 160 in the first embodiment is the same as that of the one of the drain electrodes And the other gate electrode may be applied to the connection region from the lower gate electrode at the connection region.

The switching drain electrode 160 is connected to the second active layer 155 through the other end of the second active layer 155 and is connected to the driving gate electrode (115).

In the organic light emitting diode display according to the first embodiment of the present invention, the switching gate electrode (SG) is included in the long gate line in one direction, and the gate electrode is not separately formed. SG), and the switching gate electrode SG is an area superimposed on the intrinsic region 155a of the second active layer 155. In other words, the switching gate electrode SG is integrated with the gate line 110.

A plurality of the switching gate electrodes SG may be provided on the gate lines. In the illustrated example, the second active layer 155 has two intrinsic regions 155a between the doped regions 155b, and an overlapping region is formed in the intrinsic regions 155a of the second active layer 155, And functions as an electrode SG. The second active layer 155 at the switching gate electrode SG region functions as a channel to the intrinsic region 155a.

The second active layer 155 may extend from the horizontal portion on the gate line 110 and from one side of the horizontal portion to form the data line 120, And a second vertical portion extending from the other side of the horizontal portion and overlapped with the driving gate electrode (DG) The first and second vertical portions may be doped regions 155b.

In the OLED display according to the first embodiment of the present invention, the first and second active layers 150 and 155 are formed after the formation of the gate line 110 / the driving gate electrode 115 The doped region 155b of the first and second active layers 150 and 155 may be defined as a mask independent of the shapes of the gate line 110 and the driving gate electrode 115. [ Can be freely defined.

In this case, the first active layer 150 has a doped region defined at both ends excluding the channel region, which may be a portion deviated from the driving gate electrode 115, They may be partially overlapping or spaced apart.

On the other hand, the portion corresponding to the portion where the second active layer 155 overlaps with the driving gate electrode 115 is doped so that the resistance at the connection portion is not large.

In the organic light emitting display device of the first embodiment of the present invention, since each thin film transistor has a bottom gate structure, an active layer is defined on the gate line / gate electrode layer, In defining the region, it is free. That is, the active layer is crystallized and then patterned, and a doped region is defined by implanting impurities into the selected region by using a mask.

A gate insulating layer 112 is formed between the gate line 110 and the driving gate electrode 115 and between the first and second active layers 150 and 155 and between the first and second active layers 150 and 155. [ The switching drain electrode SD may further include an interlayer insulating layer 131 disposed between the data line 120 and the driving current line 130. The interlayer insulating layer 131 may be formed between the data line 120 and the driving current line 130, The second active layer 155 is formed through the first contact hole 131a vertically penetrating the upper interlayer insulating layer 131 and the lower gate insulating layer 112 including the other end of the second active layer 155, 155), and the surface of the driving gate electrode (115).

One end of the second active layer 155, which is not illustrated, is in side contact through the data line 120 and the second contact hole 131b. One end and the other end of the first active layer 150 are connected to the driving current Side contact with the line 130 and the driving drain electrode DD and the third and fourth contact holes 131c and 131d. The second to third contact holes 131b, 131c and 131d are formed through the interlayer insulating layer 131 and the second and first active layers 155 and 150, respectively. In this case, the thickness of the upper part of the gate insulating film 112 in the corresponding portions of the second to fourth contact holes 131b, 131c and 131d may also be removed.

The buffer layer 105 may be further formed on the substrate 100 before the gate line 110 and the driving gate electrode 115 are formed. For example, the substrate 100 can be a plastic substrate, such as glass or polyimide, and if it is a thin and flexible plastic substrate, the buffer layer 105 on the substrate 100 can then be used to prevent damage to the array process A plurality of layers may be provided.

After forming the driving thin film transistor DT and the switching thin film transistor ST, a protective film 143 may be further formed on the surface of the driving thin film transistor DT and the switching thin film transistor ST, This location can be. Further, a bank 156 defining a light emitting portion may be further formed on the protective film 143. In this case, the bank 156 is formed in a region excluding the light emitting portion, and covers the driving thin film transistor DT and the switching thin film transistor ST which are the in-pixel circuit portions of the first and second embodiments described above.

 5 is a schematic plan view of the organic light emitting display of the present invention and a light emitting portion of a general organic light emitting display.

5, in contrast to the conventional structure in which the switching drain electrode SD is elongated to have a large area by securing a connection region spaced apart from each other by a planar dual connection structure, The organic light emitting diode display according to one embodiment of the present invention has a structure in which the switching drain electrode 160 vertically penetrates from the top to form an impurity region 155b at the other end of the second active layer 155, The area for connection between the switching thin film transistor ST and the driving thin film transistor DT can be significantly reduced in plan view, which is advantageous for securing a high aperture ratio.

FIG. 6 is a plan view of one pixel of an OLED display according to a second embodiment of the present invention, and FIG. 7 is a cross-sectional view taken along line II-II 'of FIG.

Meanwhile, the switching gate electrode SG may protrude from the gate line and may have a single channel.

6 and 7, the OLED display according to the second embodiment of the present invention includes a second active layer 255 having a single channel. The second embodiment of the present invention includes a gate line 210 and a data line 220 intersecting with each other, a driving current line 230 parallel to the data line, A first active layer 250 which overlaps with the driving gate electrode 215 and extends to both sides of the first active layer 250 and one end of the first active layer 250 and the driving current wiring 230 A driving transistor DT having a driving source electrode DS at an overlapping portion of the switching gate electrode 210a and a switching gate electrode 210a branched from the gate line 210; A second active layer 255 and a switching source electrode SS located at an overlapping portion between one end of the second active layer 255 and the data line 220 and the other end of the second active layer 255, Overlaps with the driving gate electrode 210a, A second active layer 255, and a switching transistor ST having a switching drain electrode connected together with the driving gate electrode.

The buffer layer 205, the gate insulating film 212, the interlayer insulating film 231 and the first to fourth contact holes 231a, 231b, 231c, and 231d, which are not illustrated in the drawings, are at the same positions as in the first embodiment .

8 is a cross-sectional view showing a light emitting portion of the organic light emitting diode display according to the present invention.

3 and 6, the first active layer 150 partially overlaps with the driving gate electrodes 115 and DG and extends to both sides, and an extended end of the first active layer 150 overlaps the driving current wiring 130, And the other end thereof is connected to the driving drain electrode DD.

8, the organic light emitting diode OLED includes a first electrode 170 connected to the driving drain electrode DD, a second electrode 170 connected to the first drain electrode DD, An organic light emitting layer 180 on the electrode 170 and a second electrode 190 on the organic light emitting layer 180.

After forming the driving thin film transistor DT and the switching thin film transistor ST, a protective layer 143 may be formed on the surface of the driving thin film transistor DT and the switching thin film transistor ST. can do. Further, a bank 156 defining a light emitting portion may be further formed on the protective film 143. In this case, the bank 156 is formed in a region excluding the light emitting portion, and covers the driving thin film transistor DT and the switching thin film transistor ST which are the in-pixel circuit portions of the first and second embodiments described above.

Meanwhile, after the first electrode 170 of the organic light emitting diode OLED is formed, the bank 156 is formed. The organic light emitting layer 180 may be formed by an evaporation method through a metal mask (not shown) having a predetermined opening corresponding to the light emitting portion. In the deposition process, the organic light emitting material remains in the region divided by the bank 156.

In some cases, an organic material including the organic light emitting layer 180 of the organic light emitting diode (OLED) may be formed over a telephone line instead of dividing into pixels. In this case, a separate color filter layer Respectively.

Meanwhile, the second electrode 190 may be formed over all the pixels. In this case, the second electrode 190 may also be located in the circuit portion of each pixel.

Hereinafter, a method of manufacturing the organic light emitting diode display of the present invention will be described with reference to the drawings. The difference between the first and second embodiments lies in the shape of the switching gate electrode and the number of channels, and the same method is used for the process, and the method is as follows.

9A to 9H are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to the present invention.

9A, a buffer layer 105 is formed on a substrate 100, a first metal is deposited on the substrate 100, and then the first metal is selectively removed. And a driving gate electrode 115, DG spaced apart from the gate line 110 are formed. The buffer layer 105 may be a plurality of layers of a silicon oxide film or a silicon nitride film, or may be formed as a single layer.

9B, a gate insulating film 112 is formed on the buffer layer 105 including the gate line 110 and the driving gate electrode 115. Next, as shown in FIG.

A first active layer 150 overlapped with the driving gate electrode 115 and extending to both sides is formed on the gate insulating layer 112. A second active layer 150 overlapped with the switching gate electrode SS, Active layer 155 is formed. The first and second active layers 150 and 155 are formed by forming an amorphous silicon film on the gate insulating film 112 and then forming a polycrystalline silicon by irradiation with a laser to form a polycrystalline silicon film, will be.

As shown in FIG. 9C, impurities are implanted into predetermined portions of the first and second active layers 150 and 155 to define a doped region. 3, a doping region is defined at both ends of the first and second active layers 150 and 155 as well as a plurality of switching gate electrodes SG (not shown) on the gate line 110, And may further include a doped region between the switching gate electrodes SG so as to divide the switching gate electrode SG to have multiple channels.

9D, an interlayer insulating layer 131 is formed on the gate insulating layer 112 including the first and second active layers 150 and 155, and the interlayer insulating layer 131 and the first active layer The third active layer 150, the second active layer 155 and the gate insulating layer 112 are selectively removed to form third and fourth contact holes 131c and 131d located at both ends of the first active layer 150, And the first and second contact holes 131a and 131b are formed at both ends of the second active layer 155. [ The first to fourth contact holes 131a to 131d are formed to penetrate both ends of the first and second active layers 150 and 155 as well as the interlayer insulating layer 131. The first, The gate insulating film 112 on the driving gate electrode 115 is removed to such an extent that the gate insulating film 115 is exposed. Since the buffer layer 105 is provided, damage to the substrate 100 is prevented even if the gate insulating film 112 is removed at a predetermined site.

9E, a driving source electrode (see DS in FIG. 3) connected laterally to both ends of the first active layer 150 through the third contact hole 131c and the fourth contact hole 131d, A switching source electrode SS for connecting the second active layer 155 to the first side via one end of the first contact hole 131a through the second contact hole 131b, And the switching drain electrode 160 connected to the other side of the second active layer 155 and connected to the driving gate electrode 115 is formed. 3, the switching source electrode SS is integrated with the data line 120 in the direction crossing the gate line 110, and the driving source electrode DS is parallel to the data line 120 And is integrated with one drive current line 130.

Thus, the structure of the circuit including the driving thin film transistor and the switching thin film transistor on the substrate 100 is completed.

A protective layer 143 is formed on the entire surface including the thin film transistors and is selectively removed to form a protective film hole 143a for exposing the upper portion of the driving drain electrode DD. ).

Next, as shown in FIG. 9F, a first electrode 170 connected to the driving drain electrode DD is formed through the protective film hole 143a.

Next, as shown in Fig. 9G, the circuit portion is covered and the bank 156 defining the light emitting portion is formed.

9H, the organic light emitting layer 180 and the cathode 190 are formed to cover at least the light emitting portion. In some cases, the organic light emitting layer 180 and the cathode 190 may be formed over all pixels without a mask.

The organic light emitting display device of the present invention has a structure in which the active layer is vertically penetrated and the upper and lower electrodes are connected to each other at a portion where the gate electrode of the driving thin film transistor is connected to one electrode of the other thin film transistor, The area occupied by the circuit part can be reduced, and the aperture ratio can be improved.

Particularly, the bottom gate structure is applied, and in particular, the taper of the gate electrode is adjusted to a low gradient to solve the disconnection problem of the cooling process after the crystallization process, which has been a problem in this structure. At the same time, And to improve the aperture ratio.

While the present invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. Will be apparent to those of ordinary skill in the art.

100, 200: substrate 105, 205: buffer layer
110, 210: gate line 112, 212: gate insulating film
120, 220: data line 130, 230: driving current line
131 and 231: interlayer insulating films 143 and 243:
150, 250: first active layer 155, 255: second active layer
156, 256: bank 160, 260: switching drain electrode
170: first electrode 180: organic light emitting layer
190: cathode 131a-131d: contact hole
231a to 231d: a contact hole ST: a switching transistor
SG: switching gate electrode SS: switching source electrode
SD: switching drain electrode DT: driving transistor
DG: driving gate electrode DS: driving source electrode
DD: driving drain electrode

Claims (10)

A gate line and a data line crossing each other;
A driving current line parallel to the data line;
A first active layer which is spaced apart from the gate line and overlapped with the driving gate electrode and extends to both sides of the driving gate electrode, and a driving source electrode which overlaps the driving current wiring with one end of the first active layer, A driving transistor having a gate electrode; And
A second active layer overlapped with the switching gate electrode and extending to both sides of the switching gate electrode; a switching source electrode positioned at an overlapping portion between one end of the second active layer and the data line; And a switching transistor having a switching drain electrode which overlaps with the driving gate electrode and is connected together with the second active layer and the driving gate electrode at an overlapped portion. The method according to claim 1,
Wherein the switching drain electrode is connected to a side of the second active layer through the other end of the second active layer and connected to a part of the driving gate electrode below the second active layer. 3. The method of claim 2,
Wherein the plurality of switching gate electrodes are provided in the gate lines. The method of claim 3,
Wherein the second active layer defines a channel at a position corresponding to the plurality of switching gate electrodes on the gate line and has a doped region around the channel. The method of claim 3,
The second active layer includes a horizontal portion on the gate line and a first vertical portion extending from one side of the horizontal portion and located along the data line and a second vertical portion extending from the other side of the horizontal portion, And an organic light emitting diode (OLED) display. 3. The method of claim 2,
Wherein the switching electrode has a shape protruding from the gate line. 3. The method of claim 2,
A driving drain electrode connected to the other end of the first active layer;
A first electrode connected to the driving drain electrode;
An organic light emitting layer on the first electrode; And
And a second electrode over the organic light emitting layer. 8. The method of claim 7,
A gate insulating film between the first gate electrode and the second gate electrode,
Further comprising an interlayer insulating film between the first and second active layers and between the data line and the driving current line. 9. The method of claim 8,
Wherein the switching drain electrode is vertically penetrating the upper interlayer insulating film and the lower gate insulating film including the other end of the second active layer above the interlayer insulating film. Forming on the substrate a gate line including a switching gate electrode and located in one direction and a driving gate electrode spaced apart from the gate line;
Forming a gate insulating film on the substrate including the gate line and the driving gate electrode;
Forming on the gate insulating layer a first active layer overlapping the driving gate electrode and extending to both sides and a second active layer overlapping the switching gate electrode and extending to both sides;
Forming an interlayer insulating film on the gate insulating film including the first and second active layers;
The first active layer, the second active layer, and the gate insulating film are selectively removed to form first and second drive contact holes located at both ends of the first active layer, Forming first and second switching contact holes at both ends; And
A driving source electrode and a driving drain electrode which are respectively connected to both sides of the first active layer through the first driving contact hole and the second driving contact hole and a second driving contact hole, And forming a switching drain electrode connected to the other end of the second active layer through the second switching contact hole and connected to the driving gate electrode.

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