KR20160126805A - Thermoelectric device moudule and device using the same - Google Patents

Abstract

An embodiment of the present invention relates to a thermoelectric module which can improve reliability by preventing a short circuit. In an embodiment of the present invention, the thermoelectric module includes a first substrate having a plurality of first electrodes; a second substrate facing the first substrate and having a plurality of second electrodes; a plurality of thermoelectric elements disposed between the first substrate and the second substrate and electrically connected to the first electrode and the second electrode; a solder pattern layer disposed among the first electrode and the second electrode and the thermoelectric element; and a receiving groove for receiving the thermoelectric element and the solder pattern layer on the first substrate and the second substrate. So, a short circuit with an electrode pattern can be prevented.

Description

TECHNICAL FIELD [0001] The present invention relates to a thermoelectric module,

An embodiment of the present invention relates to a thermoelectric module that can prevent short-circuiting and enhance reliability.

Generally, a thermoelectric element including a thermoelectric conversion element is a structure that forms a PN junction pair by bonding a P-type thermoelectric material and an N-type thermoelectric material between metal electrodes. When a temperature difference is given between the PN junction pairs, the power is generated by the Seeback effect, so that the thermoelectric device can function as a power generation device. Further, the thermoelectric element may be used as a temperature control device by a Peltier effect in which one of the PN junction pair is cooled and the other is heated.

Such a thermoelectric element can be applied to a device for cooling or heating or a device for power generation to realize various thermal conversion effects. A thermoelectric device applied to a cooling and heating device can be used as a temperature control device by a Peltier effect in which one of the PN junction pairs is cooled and the other is heated. Accordingly, attention has been focused on a method of increasing the efficiency of a thermoelectric device.

Furthermore, it is necessary to solve the problem that the thermoelectric efficiency is lowered due to the increase of the contact resistance and the decrease of the mechanical strength due to the bonding using the solder in the bonding method of the thermoelectric element between the upper substrate and the lower substrate, which is the basic structure of the thermoelectric module . Particularly, when the solder is overflowed at the time of solder bonding, there arises a problem that a shortage occurs with neighboring electrodes and the defect rate becomes high.

In order to solve the above problems, an embodiment of the present invention has been devised in order to solve the above-mentioned problems. In particular, a substrate for constituting a thermoelectric module is provided with a groove for receiving a solder, Thereby preventing a short circuit with the pattern.

According to an embodiment of the present invention, there is provided a plasma display panel comprising: a first substrate having a plurality of first electrodes; A second substrate facing the first substrate and having a plurality of second electrodes; And a plurality of thermoelectric elements disposed between the first substrate and the second substrate, the thermoelectric elements being electrically connected to the first electrode and the second electrode; A solder pattern layer disposed between the first electrode and the second electrode and the thermoelectric element; And a receiving groove for receiving the thermoelectric element and the solder pattern layer on the first substrate and the second substrate.

According to the embodiment of the present invention, a solder receiving groove portion is provided in a substrate constituting a thermoelectric module to prevent solder that is overflowed during solder bonding to prevent movement, thereby preventing a short circuit with neighboring electrode patterns .

According to another embodiment of the present invention, the area of the first substrate and the area of the second substrate are different from each other to increase the heat radiation efficiency, so that the thermoelectric module can be thinned. Particularly, when the areas of the first substrate and the second substrate are formed differently, the area of the substrate on the heat-dissipating side is increased to increase the heat transfer rate, thereby realizing the miniaturization and thinning of the cooling device by removing the heat sink do.

According to another embodiment of the present invention, a unit member including a semiconductor layer is laminated on a sheet base material to form a thermoelectric element, thereby lowering the thermal conductivity and increasing the electrical conductivity, thereby increasing the cooling capacity Qc and the rate of temperature change DELTA T) of the thermoelectric element and the thermoelectric module can be remarkably improved. Further, the conductive pattern layer can be included between the unit members of the laminated structure to maximize the electrical conductivity, and the thickness can be remarkably reduced compared with the entire bulk type thermoelectric elements.

Further, according to another embodiment of the present invention, the structure of the thermoelectric element itself can be realized in a structure in which the widths of the upper and lower portions are wider than the width of the central portion, thereby maximizing the thermoelectric efficiency, do. Particularly, this has the effect of reducing the material cost of the thermoelectric element to the equivalent power generation performance.

FIG. 1 and FIG. 2 are conceptual diagrams showing the essential parts of a thermoelectric module according to an embodiment of the present invention.
FIG. 3 illustrates an application example of a thermoelectric module according to an embodiment of the present invention.
4 is a conceptual diagram showing another structure of a thermoelectric element according to an embodiment of the present invention.
5 to 7 are views illustrating an example of an embodiment of a thermoelectric device according to another embodiment of the present invention.

Hereinafter, the configuration and operation according to the present invention will be described in detail with reference to the accompanying drawings. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In the following description with reference to the accompanying drawings, the same reference numerals denote the same elements regardless of the reference numerals, and redundant description thereof will be omitted. The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another.

FIG. 1 is a conceptual view for explaining a function of a thermoelectric module according to an embodiment of the present invention, and FIG. 2 is a conceptual diagram showing a main part of a thermoelectric module according to an embodiment of the present invention.

1 and 2, a thermoelectric module according to an exemplary embodiment of the present invention includes a first substrate 140 having a plurality of first electrodes 160a, a first substrate 140 disposed to face the first substrate 140, A second substrate (150) having a plurality of second electrodes (160b), and a plurality of thermoelectric elements (150) disposed between the first substrate and the second substrate and electrically connected to the first and second electrodes And a solder pattern layer (162a, 162b) disposed between the first and second electrodes and the thermoelectric element, and in particular, the first substrate (140) and the second substrate 150 may include the receiving grooves 141, 151 for receiving the first and second electrodes and the solder pattern layer.

1, the first substrate 140 and the second substrate 150, which are provided with the electrode pattern, are bonded through the soldering process with the thermoelectric elements 120 and 130 interposed therebetween . In this case, the portions a1 and a2 swelled by heat at the time of soldering are lowered in viscosity and flow over the adjacent portion X between the electrodes. In this case, a short occurs between mutually adjacent first electrodes, In the case of a module in which a plurality of unit structures shown in Fig. 1 are combined (see Fig. 3), short-circuiting occurs at both ends of the second electrode 160b with electrodes of neighboring unit cells.

2, receiving grooves 141 and 151 having grooves having a predetermined depth are formed on the surfaces of the first substrate 140 and the second substrate 150, . The first electrode 160a and the second electrode 160b and the solder pattern layers 162a and 162b can be accommodated in the receiving grooves 141 and 151. [ In the case of the first receiving groove part 141 formed on the first substrate 140, the receiving groove part forms a unit cell in which the first electrode 160a in contact with the pair of thermoelectric elements is disposed, A solder pattern layer 162a for bonding the first electrode 160a to the pair of thermoelectric elements 120 and 130 is disposed and soldered in the first housing recess 141. [ In this case, the residue of the solder pattern layer 162a overflows into a region (X region in FIG. 1) between the first electrodes 160a adjacent to each other, which may cause a short circuit. In order to prevent this, according to the embodiment of the present invention, the first receiving groove 141 may further include a short-circuit prevention dam pattern 142 protruded between adjacent first electrodes 160a . In the case of the short damming dam pattern 142, the shorting preventing dam pattern 142 protrudes from the surface of the first receiving groove 141 to prevent overflow of the adjacent stripe pattern layer, The electrode layer 160a may be formed to protrude beyond the thickness of the solder pattern layer.

Furthermore, the second receiving groove 151 formed on the second substrate 150 may be implemented as a well structure having a structure that accommodates the second electrode 160b and the solder pattern layer 162b. The structure of the 'well structure' is defined as a structure that implements the accommodation space where the concave groove is realized at a certain depth.

In this case, the depth of the second receiving groove can be made to be equal to or greater than the thickness of the solder pattern layer stacked on the second electrode. As shown in FIG. 3, in order to prevent a short circuit between neighboring unit cells in a structure of a thermoelectric module that implements a plurality of unit cells as shown in FIG. 2 including a pair of thermoelectric elements.

The structure of the first receiving groove part 141 is realized by a structure including the short damming dam pattern 142 between the electrodes and the structure of the second receiving groove part 151 is basically the same as the depth direction of the substrate And the second electrode and the second solder pattern layer are entirely accommodated, as shown in FIG. This structure allows the solder material to be easily inwardly in the interior of the receiving groove, thereby making it possible to easily prevent a short between the electrode patterns from occurring.

Therefore, in the structure of the thermoelectric module according to the above-described embodiment of the present invention, when the thermoelectric element and the substrate facing each other are coupled, the receiving groove portion is provided on the substrate to temporarily accommodate the solder in the soldering process, It is possible to realize an advantage of being able to prevent a short circuit with neighboring electrode patterns, so that the reliability of the thermoelectric module can be secured.

In addition, the first substrate 140 and the second substrate 150, which are disposed to face each other in the thermoelectric module according to the embodiment of the present invention , are usually made of an insulating substrate such as an alumina substrate or a flexible polymeric resin Or in the case of the embodiment of the present invention, a thermal efficiency and thinning can be realized by using a metal substrate. Of course, when a metal substrate is formed, a separate dielectric layer (not shown) is formed on the contact surfaces between the first and second electrodes 160a and 160b embedded in the first and second substrates 140 and 150 It is preferable to further include the above. In the case of a metal substrate, Cu or Cu alloy, Cu - Al alloy, or the like can be applied. Furthermore, the substrate according to the embodiment of the present invention can be applied to a flexible substrate. This is, the polyimide (PI), polystyrene (PS), polymethyl methacrylate (PMMA), cyclic olefin co-poly (COC), polyethylene terephthalate (PET), resins different insulation such as high permeability plastic, such as a (resin) A resin material can be used.

In addition, In the embodiment  The area of the second substrate 150 may be 1.2 to 5 times the area of the first substrate 140 so that the volume of the second substrate 150 may be different. 3, the width of the first substrate 140 is narrower than the width of the second substrate 150. In this case, the areas of the substrates having the same thickness are different from each other, Be different .

If the area of the second substrate 150 is less than 1.2 times as large as that of the first substrate 140, there is no significant difference from the conventional thermal conductivity efficiency and there is no meaning of thinning. If the area is larger than 5 times, Shape (for example, Opposing structure ), And the heat transfer efficiency is significantly lowered.

In addition, in the case of the second substrate 150, the heat radiation pattern ( Mido City ), For example, to form an uneven pattern to maximize the heat dissipation characteristics of the second substrate, Heat sink  It is possible to ensure more efficient heat dissipation characteristics even if the configuration is deleted. In this case, the heat radiation pattern may be formed on one or both surfaces of the second substrate. Particularly, when the heat dissipation pattern is formed on a surface in contact with the first and second semiconductor elements, it is possible to improve the heat dissipation characteristics and the bonding property between the thermoelectric element and the substrate.

Also, the thickness of the first substrate 140 (the thickness of the second substrate 150) Thickness  And the cooling side ( Cold sied ) To facilitate the flow of heat Heat transfer rate  It can be increased.

The first and second electrodes 160a and 160b electrically connect the first semiconductor element 120 and the second semiconductor element 130, which are thermoelectric elements, with an electrode material such as Cu, Ag, or Ni. The thickness of the electrode layer may be in the range of 0.01 mm to 0.3 mm. And more preferably in the range of 10 mu m to 20 mu m.

In this case, the thermoelectric elements 120 and 130 may include the first semiconductor element 120 and the second semiconductor element 130 in one electrode, and a plurality of such structures may be modularized as in the structure of FIG. 3 . Particularly, in this case, the first semiconductor element 120 and the second semiconductor element 130 according to the present invention can be applied to a semiconductor device formed of a bulk type by applying a P-type semiconductor or an N-type semiconductor material. Bulk type refers to a structure obtained by grinding an ingot, which is a semiconductor material, followed by finishing a ball-mill process, and then cutting the sintered structure. Such a bulk type device can be formed in one integrated structure.

The p-type semiconductor or the n-type semiconductor material is characterized in that the n-type semiconductor element is at least one selected from the group consisting of Se, Ni, Al, Cu, Ag, Pb, (BiTe-based) including gallium (Ga), tellurium (Te), bismuth (Bi), and indium (In), and a bismuth telluride system (BiTe system) containing 0.001 to 1.0 wt% May be formed using a mixture of Bi or Te. For example, the main raw material may be a Bi-Se-Te material, and Bi or Te may be added to the Bi-Se-Te by adding a weight corresponding to 0.001 to 1.0 wt% When the weight of -Se-Te is 100 g, it is preferable to add Bi or Te to be added in the range of 0.001 g to 1.0 g. As described above, since the weight range of the substance added to the above-described raw material is not in the range of 0.001 wt% to 0.1 wt%, the thermal conductivity is not lowered and the electric conductivity is lowered, so that the improvement of the ZT value can not be expected. I have.

The P-type semiconductor material may be at least one selected from the group consisting of antimony (Sb), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium (BiTe-based) including Bi, Te, Bi, and In, and a mixture of Bi or Te corresponding to 0.001 to 1.0 wt% of the total weight of the main raw material It is preferable to form it by using. For example, the main raw material may be a Bi-Sb-Te material, and Bi or Te may be added to the Bi-Sb-Te by adding a weight corresponding to 0.001 to 1.0 wt% of the total weight of the Bi-Sb-Te. That is, when 100 g of Bi-Sb-Te is added, Bi or Te to be added may be added in the range of 0.001 g to 1 g. The weight range of the substance added to the above-described main raw material is not inferior to the range of 0.001 wt% to 0.1 wt%, and the electrical conductivity is lowered, so that improvement of the ZT value can not be expected.

In addition, further, In the embodiment  The thermoelectric module including the thermoelectric element according to the present invention can realize the structure of the thermoelectric element as shown in the structure of FIG. 1, and the volumes of the first substrate and the second substrate can be formed to be different from each other. The In the example  The term " volume " The outer circumferential surface  Is defined as meaning the internal volume to form.

In this case, in the case of the thermoelectric element, one side is the P-type semiconductor as the first semiconductor element 120, Conductor element Type semiconductor as the first semiconductor 130 and the N-type semiconductor as the first semiconductor, The conductor  And is connected to the metal electrodes 160a and 160b. A plurality of such structures are formed, and current is supplied to the semiconductor elements through the electrodes Circuit lines 181 and 182  due to Peltier  Effect.

Particularly, in the present invention, Peltier  By the effect, Cold side ) Than the area of the first substrate 140, Hot side The second substrate 150 can be formed to have a large area, thereby increasing the thermal conductivity and increasing the heat radiation efficiency. As a result, Heat sink  It can be removed.

In addition, In the embodiment  The structure of the thermoelectric element according to Fig. To  3, and may have the same shape as the structure shown in Fig. 4, in addition to being realized by a structure having the same width as a cubic structure of a rectangular parallelepiped or a cube.

That is, in the structure of Figs. 1 and 2, the thermoelectric elements 120 and 130 are formed on the exposed surfaces of the first electrode and the second electrode, which are received on the first substrate and the second substrate, And can be implemented with a structure in which the width of the joining portion is wide.

This structure will be described in detail with reference to FIG. 4, In the embodiment  The thermoelectric element 120, The first cross-  Branch The first element portion (122), The first element portion (122) and Opposed  In position The second cross-  Branch The second element portion (126) and the The first element portion (122) and the The second element portion (126) The third cross-  The branch may be implemented as a structure including the connection portion 124. [ Particularly, in this case, the cross-sectional area of the connecting portion 124 in an arbitrary region in the horizontal direction is smaller than the cross- Than the second cross-  It can be provided with a structure that is small.

Such a structure has the same material and has a single cube structure The cross-  When applying the same amount of material as the thermoelectric element of the branch structure, The first element portion In the second element portion  The area can be widened, and the length of the connecting portion can be realized in the way, The first element portion The second element portion  It is possible to realize the advantage that the temperature difference DELTA T between the electrodes can be increased. When the temperature difference is increased, Hot side )Wow Cooling side ( Cold side The amount of free electrons moving between the electrodes increases, Increase , And in the case of heat generation or cooling, the efficiency becomes high.

Therefore, In the embodiment  Following The thermoelectric element 120  The connection portion 124 may be formed in a plate-like structure or in a different three-dimensional structure The first element portion  And In the second element portion  level The cross-  Wide, and the length of the connection is extended, The cross-  So that it can be narrowed. In particular, In the embodiment , A width (B) of a cross section having the longest width of the horizontal cross section of the connecting portion, The first element portion  And In the second element portion  The width of the larger cross section of the horizontal cross section, A or  C) is in the range of 1: (1.5 to 4). If it is outside this range, On the heat side On the cooling side  Which leads to deterioration of power generation efficiency or lowering heat generation and cooling efficiency.

Of this structure Example  In another aspect, the thermoelectric element 120 is formed of The first element portion  And a thickness in the longitudinal direction of the second element ( a1 , a3 ) Of the connecting portion ( s2)  It can be formed to be small.

Furthermore, In the embodiment , The first element portion Which is a cross-sectional area in the horizontal direction of the light- The first cross- The second element portion The second cross-sectional area, which is the cross-sectional area in the horizontal direction, of the second cross-sectional area 126 may be different. This is to control the thermoelectric efficiency to easily control the desired temperature difference. Further, The first element portion , remind The second element portion  And the connecting portion may be configured to be integrally formed with each other. In this case, the respective components may be realized by the same material.

5 To  7, To  4 of the present invention described in In the embodiment  Describing another way to implement a thermoelectric device This is an embodiment .

In other words, In the embodiment  The structure of the semiconductor device described above Bulk type  Non-structural Laminated type  Structure can be realized so that the thinning and cooling efficiency can be further improved.

More specifically, the structure of the first semiconductor element 120 and the second semiconductor element 130 in FIG. 5 may be formed by stacking a semiconductor material on a sheet- Coated  Numerous structures Laminated As a unit member  It is possible to prevent the loss of the material and to improve the electric conduction characteristic.

Referring to FIG. 5, FIG. 5 is a cross- Unit member  Manufacturing process Conceptual diagram  Respectively. 5, a material including a semiconductor material is formed into a paste, a paste is applied on a substrate 111 such as a sheet or a film, The semiconductor layer 112  Form one The unit member 110  . remind The unit member 110  As shown in FIG. 5, The unit members 100a, 100b, and 100c Laminated  A laminated structure is formed, and then the laminated structure is cut The unit thermoelectric element 120  . That is, The unit thermoelectric element 120  On the substrate 111, The layer 112  Laminated The unit member 110  Many Laminated  Structure.

The process of applying the semiconductor paste on the substrate 111 in the above-described process can be implemented using various methods, For example,  Tape casting Tape casting ), That is, a very fine semiconductor material powder, Non-aqueous system  menstruum( solvent ) And binder ( binder ), A plasticizer ( plastikizer ), Dispersant ( dispersant ), Defoamer ( defoamer ) And a surfactant are mixed to prepare a slurry ( slurry ) And then moving Blade or  Moving carrying Above the substrate  And can be realized by a process of forming a desired thickness with a desired thickness. In this case, the thickness of the substrate is 10 um ~ 100 um A film, a sheet, Applied  The semiconductor material is the Bulk type  Device Reorganize  The P-type material and the N-type material can be applied as they are.

remind The unit member 110  Multilayered By reason Laminated  The process may be performed at a temperature of 50 ° C to 250 ° C to form a laminate structure. In the embodiment  Such The unit member 110  The number of layers can be in the range of 2 to 50. Then, in the desired shape and size The cutting process  Lt; / RTI > The sintering process  Can be added.

[0050] The unit member 110  many Stacked  Formed The unit thermoelectric element  Uniformity in thickness and shape size can be ensured. That is, Bulk ) Shaped thermoelectric elements Ingot grinding , Micronized ball-mill ( ball - mill ) After the process, the sintered bulk structure To cut  However, In the cutting process  Not only is there a lot of material to be lost, but it is also difficult to cut to a uniform size, mm ~ 5 mm  So that it is difficult to reduce the thickness. However, the present invention is not limited to the above- Laminated type  Structural The unit thermoelectric element , Sheet-shaped Unit member  Multilayer Laminated  After, the sheet The laminate  It is possible to ensure the uniformity of the bar material having a uniform thickness of the material, and the thickness of the entire unit thermoelectric element is 1.5 mm  Or less, and can be formed into various shapes To be applicable  do. The structure finally implemented is the same as that of the present invention In the embodiment  Like the structure of the thermoelectric element according to the present invention, cut into a cubic or rectangular parallelepiped structure, By implementation  5 (d).

Particularly, according to the embodiment of the present invention Unit thermoelectric element  In the manufacturing process, The unit member 110  During the process of forming the laminated structure, The unit member 110  On the surface Conductive layer  The method of the present invention can be realized.

That is, in the laminated structure of Fig. 5 (c) Unitary member  between Between  6 < / RTI > remind The conductive layer The semiconductor layer  Formed The On the opposite side  And in this case, Unitary member  A patterned layer may be formed such that a surface exposed region is formed. The front Applied  The electric conductivity can be increased as compared with the case Unit member  It is possible to improve the bonding force between the first and second substrates and to lower the thermal conductivity.

That is, what is shown in FIG. 6 is a The thickness of the conductive layer (C)  As shown in various modified examples, Unitary member  As shown in Figs. 6 (a) and 6 (b), a pattern in which the surface is exposed includes a closed-type opening pattern c _One , c ₂ ) Mesh type  6 (c) and 6 (d), the open aperture pattern ( c ₃ , c ₄ ) Line type  And the like. ideal The conductive layer Unitary member  Formed in a laminated structure Unit thermoelectric element  Inside each Between unit members  In addition to increasing the adhesive strength, Between unit members  The advantages of lowering the thermal conductivity and improving the electrical conductivity are realized, Bulk type  Cooling Capacity vs. Thermoelectric Device ( Qc ) And DELTA T (DEG C) are improved, and in particular, the power factor Power factor ) Is 1.5 times, that is, the electrical conductivity is increased 1.5 times. The increase of the electric conductivity is directly related to the improvement of the thermoelectric efficiency, so that the cooling efficiency is improved. remind The conductive layer  And may be formed of a metal material, Cu , Ag , Ni  And the like can be applied to the electrode material of the metal series.

5, Laminated type  Structural Unit thermoelectric element  1 and 4, that is, between the first substrate 140 and the second substrate 150, In the embodiment  The thermoelectric elements are arranged, The electrode layer  Of the containing structure Unit cell  When implementing a thermoelectric module, the total thickness ( Th ) Is 1. mm ~ 1.5 mm In the range of To be able to form  Existing, existing Bulk type  It is possible to achieve remarkable thinning compared to the case of using a device.

As shown in FIG. 7, the thermoelectric elements 120 and 130 described in FIG. 5 are formed in the upper direction X and the lower direction Y, as shown in FIG. 6 (a) Horizontally  So that it can be deployed By reason , (c) and In the embodiment  A thermoelectric device according to the present invention may be implemented.

7 (c), the first substrate and the second substrate, Semiconductor layer  And the surface of the base material are arranged so as to be adjacent to each other. However, as shown in (b), the thermoelectric device itself may be vertically erected, Unit thermoelectric element The side portion  The first substrate and the second substrate may be disposed adjacent to each other. In such a structure, Conductive layer  The end portions are exposed, the thermal conduction efficiency in the vertical direction can be lowered, and the electrical conduction characteristics can be improved, so that the cooling efficiency can be further increased.

As described above, in various embodiments Implementable  In the thermoelectric element applied to the thermoelectric module of the present invention, Opposed  The first semiconductor element and the second semiconductor element are formed in the same shape and size. In this case, the electrical conductivity of the P-type semiconductor element and the electrical conductivity of the N-type semiconductor element are different from each other, Considering the point, the volume of either one Opposed  But it is also possible to improve the cooling performance by forming it differently from the volume of other semiconductor elements.

That is, Against  The volume of the semiconductor element to be disposed may be different from the volume of the semiconductor element to be formed may be different from that of the semiconductor element having the same height, Diameter  In the case of a semiconductor device having a wide or uniform shape, Diameter  It is possible to implement them in different ways. In particular, Diameter  The p-type semiconductor device can be formed larger than the p-type semiconductor device, thereby increasing the volume and improving the thermoelectric efficiency.

The thermoelectric elements having various structures according to the embodiment of the present invention and the thermoelectric module including the thermoelectric elements may be formed as described above Power generation module , Or on the surfaces of the upper and lower substrates Endotherm  It can be used for cooling by taking the heat of the medium such as water or liquid according to the characteristic of the site, or for heating by transferring heat to a specific medium. That is, in the thermoelectric module according to the various embodiments of the present invention, the configuration of the cooling device that improves the cooling efficiency is described as an embodiment. However, Opposite  The substrate can be applied to an apparatus used for heating a medium by using a heat generating characteristic. That is, cooling and heating in one device at the same time To function  It can be applied to the equipment to be implemented.

In the detailed description of the present invention as described above, In the embodiment  . However, various modifications are possible within the scope of the present invention. The technical idea of the present invention is not limited to the above- In the embodiment  And should be determined by equivalents to the appended claims, as well as the claims.

110: unit member
111: substrate
112: semiconductor layer
120: thermoelectric element
122: first element part
124:
126: Second element part
130: thermoelectric element
132: first element part
134:
136: second element part
140: first substrate
141: first receiving groove
142: Dam pattern for preventing short circuit
150: second substrate
151: second accommodating groove
160a and 160b:
162a and 162b: solder pattern layer
181, 182: circuit line

Claims (11)

A plasma display panel comprising: a first substrate having a plurality of first electrodes;
A second substrate facing the first substrate and having a plurality of second electrodes; And
A plurality of thermoelectric elements disposed between the first substrate and the second substrate and electrically connected to the first electrode and the second electrode;
A solder pattern layer disposed between the first electrode and the second electrode and the thermoelectric element; And
A receiving groove for receiving the first electrode, the second electrode, and the solder pattern layer on the first substrate and the second substrate;
/ RTI >
The method according to claim 1,
Wherein,
And a first receiving groove portion disposed on the first substrate,
Wherein the first receiving groove portion is protruded between first electrodes adjacent to each other.
The method of claim 2,
In the short-circuit protection dam pattern,
Projecting from the surface of the receiving groove portion,
Wherein the first electrode and the second electrode protrude beyond the thickness of the solder pattern layer on the first electrode and the first electrode.
The method of claim 4,
In the short-circuit protection dam pattern,
Wherein the thermoelectric module is integrated with the surface of the first substrate.
The method of claim 2,
Wherein,
And a second receiving groove portion disposed on the second substrate,
Wherein the second receiving groove portion includes a second electrode that contacts the pair of thermoelectric elements, and a structure that accommodates the entire solder pattern layer.
The method of claim 5,
The depth of the first receiving groove and the depth of the second receiving groove,
Wherein the thickness of the solder pattern layer is greater than the thickness of the solder pattern layer stacked on the first electrode and the second electrode.
The method according to any one of claims 1 to 6,
The thermoelectric element includes:
A thermoelectric module comprising a first semiconductor element which is a p-type thermoelectric semiconductor and a second semiconductor element which is an n-type thermoelectric semiconductor.
The method of claim 7,
Wherein the volume of the second semiconductor element is larger than the volume of the first semiconductor element.
The method of claim 7,
Wherein the thermoelectric element has a horizontal cross-sectional area of a portion contacting the first electrode and the second electrode is larger than a horizontal cross-sectional area of another portion.
The method of claim 7,
The thermoelectric element includes:
A thermoelectric module in which two or more unit members including a semiconductor layer on a substrate are laminated and implemented.
A thermal conversion device comprising the thermoelectric module according to any one of claims 1 to 5.

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