KR20160117944A - Thermoelectric device moudule and device using the same - Google Patents

Thermoelectric device moudule and device using the same Download PDF

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Publication number
KR20160117944A
KR20160117944A KR1020150046045A KR20150046045A KR20160117944A KR 20160117944 A KR20160117944 A KR 20160117944A KR 1020150046045 A KR1020150046045 A KR 1020150046045A KR 20150046045 A KR20150046045 A KR 20150046045A KR 20160117944 A KR20160117944 A KR 20160117944A
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South Korea
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substrate
thermoelectric
electrode
present
thickness
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KR1020150046045A
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Korean (ko)
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김종현
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엘지이노텍 주식회사
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Publication of KR20160117944A publication Critical patent/KR20160117944A/en

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    • H01L35/02—

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Abstract

An embodiment of the present invention relates to a structure of a thermoelectric module capable of enhancing a thermoelectric efficiency, and an embodiment of the present invention includes a first substrate having a first electrode; A second substrate facing the first substrate and having a second electrode; And a plurality of thermoelectric elements disposed between the first substrate and the second substrate, the thermoelectric elements being electrically connected to the first electrode and the second electrode; The first electrode and the second electrode can provide a thermoelectric module in which a contact region with the thermoelectric element is thicker than a non-contact region.

Description

TECHNICAL FIELD [0001] The present invention relates to a thermoelectric module,

An embodiment of the present invention relates to a structure of a thermoelectric module capable of increasing thermoelectric efficiency.

Generally, a thermoelectric element including a thermoelectric conversion element is a structure that forms a PN junction pair by bonding a P-type thermoelectric material and an N-type thermoelectric material between metal electrodes. When a temperature difference is given between the PN junction pairs, a power is generated by the Seeback effect, so that the thermoelectric device can function as a power generation device. Further, the thermoelectric element may be used as a temperature control device by a Peltier effect in which one of the PN junction pair is cooled and the other is heated.

Such a thermoelectric element can be applied to a device for cooling or heating or a device for power generation to realize various thermal conversion effects.

A thermoelectric device applied to a cooling and heating device can be used as a temperature control device by a Peltier effect in which one of the PN junction pairs is cooled and the other is heated.

Accordingly, attention has been focused on a method of increasing the efficiency of a thermoelectric device.

In order to increase the efficiency of the conventional thermoelectric element, the structure of the electrode contacting the thermoelectric element is realized by protruding the thickness of the contact portion so that the thermal equilibrium of the upper and lower substrates of the thermoelectric module So that the thermoelectric efficiency can be increased.

As a means for solving the above-mentioned problems, an embodiment of the present invention provides a liquid crystal display comprising: a first substrate having a first electrode; A second substrate facing the first substrate and having a second electrode; And a plurality of thermoelectric elements disposed between the first substrate and the second substrate, the thermoelectric elements being electrically connected to the first electrode and the second electrode; The first electrode and the second electrode can provide a thermoelectric module in which a contact region with the thermoelectric element is thicker than a non-contact region.

According to the embodiment of the present invention, the structure of the electrode contacting the thermoelectric body can be realized so as to protrude the thickness of the contact portion, thereby suppressing the thermal equilibrium of the upper and lower substrates of the thermoelectric module, thereby increasing the thermoelectric efficiency.

According to another embodiment of the present invention, the area of the first substrate and the area of the second substrate are different from each other to increase the heat radiation efficiency, so that the thermoelectric module can be thinned. Particularly, when the areas of the first substrate and the second substrate are formed differently, the area of the substrate on the heat-dissipating side is increased to increase the heat transfer rate, thereby realizing the miniaturization and thinning of the cooling device by removing the heat sink do.

According to another embodiment of the present invention, a unit member including a semiconductor layer is laminated on a sheet base material to form a thermoelectric element, thereby lowering the thermal conductivity and increasing the electrical conductivity, thereby increasing the cooling capacity Qc and the rate of temperature change 0T) is remarkably improved can be provided. Further, the conductive pattern layer can be included between the unit members of the laminated structure to maximize the electrical conductivity, and the thickness can be remarkably reduced compared with the entire bulk type thermoelectric elements.

FIG. 1 and FIG. 2 are conceptual diagrams showing the essential parts of a thermoelectric module according to an embodiment of the present invention.
FIG. 3 illustrates an application example of a thermoelectric module according to an embodiment of the present invention.
4 is a conceptual diagram showing another structure of a thermoelectric element according to an embodiment of the present invention.
5 to 7 are views illustrating an example of an embodiment of a thermoelectric device according to another embodiment of the present invention.

Hereinafter, the configuration and operation according to the present invention will be described in detail with reference to the accompanying drawings. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In the following description with reference to the accompanying drawings, the same reference numerals denote the same elements regardless of the reference numerals, and redundant description thereof will be omitted. The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another.

1 and 2 are conceptual diagrams showing the essential parts of a thermoelectric module according to an embodiment of the present invention.

1, a thermoelectric module according to an embodiment of the present invention includes a first substrate 140 having a first electrode 160a and a second electrode 160b disposed to face the first substrate 140, , And a plurality of thermoelectric elements (120, 130) disposed between the first substrate and the second substrate and electrically connected to the first and second electrodes . Particularly, in this case, the first electrode 160a and the second electrode 160b can have a structure in which a contact area with the thermoelectric element is thicker than a non-contact area.

That is, the first electrode 160a and the second electrode 160b which are in contact with the thermoelectric elements 120 and 130 protrude from other electrode portions. With such a structure, it is possible to increase the distance between the first substrate and the second substrate with respect to the thermoelectric elements having the same thickness or height, and thereby the gap between the hot side substrate and the cold side substrate It is possible to prevent the thermal equilibrium from easily occurring.

The thickness a of the contact region on the protruding portion of the first electrode 160a and the second electrode 160b described above can be made to be (0.05 to 1.0) times b times the thickness of the noncontact region b . If the thickness is out of the above range, the thickness of the electrode becomes excessively thick and the heat conversion efficiency of the substrate is rather lowered.

The detailed configuration of the thermoelectric module according to the embodiment of the present invention will be described with reference to FIGS. 1 and 2. FIG.

The first substrate 140 and the second substrate 150, which are disposed to face each other, may be generally an insulating substrate such as an alumina substrate. Alternatively, in the case of the embodiment of the present invention, a thermal efficiency and thinning can be realized by using a metal substrate Can be done. Of course, in the case of forming a metal substrate, the dielectric layers 170a and 170b may be formed between the electrode layers 160a and 160b formed on the first and second substrates 140 and 150 as shown in FIG. . In the case of a metal substrate, Cu or a Cu alloy, a Cu-Al alloy, or the like can be applied, and a thickness capable of being thinned can be formed in a range of 0.1 mm to 0.5 mm.

In the exemplary embodiment of the present invention, the area of the second substrate 150 may be 1.2 to 5 times the area of the first substrate 140 so that the volume of the second substrate 150 may be different. 3, the width of the first substrate 140 is narrower than the width of the second substrate 150. In this case, the areas of the substrates having the same thickness are different from each other, and the volume of the substrate is different.

If the area of the second substrate 150 is less than 1.2 times as large as that of the first substrate 140, there is no significant difference from the conventional thermal conductivity efficiency and there is no meaning of thinning. If the area is larger than 5 times, It is difficult to maintain the shape (e.g., facing structure facing each other) of the heat exchanger, and the heat transfer efficiency is remarkably deteriorated.

In addition, in the case of the second substrate 150, a heat dissipation pattern (not shown) may be formed on the surface of the second substrate to maximize heat dissipation characteristics of the second substrate, It is possible to ensure more efficient heat dissipation characteristics even when the configuration of Fig. In this case, the heat radiation pattern may be formed on one or both surfaces of the second substrate. Particularly, when the heat dissipation pattern is formed on a surface in contact with the first and second semiconductor elements, it is possible to improve the heat dissipation characteristics and the bonding property between the thermoelectric element and the substrate.

The thickness of the first substrate 140 may be smaller than the thickness of the second substrate 150 to facilitate the introduction of heat at the cold side and increase the heat transfer rate.

In the case of the dielectric layers 170a and 170b, a material having thermal conductivity of 5 to 10 W / K is used as a dielectric material having high heat dissipation performance, considering the thermal conductivity of the thermoelectric module for cooling. mm. < / RTI >

The electrode layers 160a and 160b electrically connect the first semiconductor element and the second semiconductor element using an electrode material such as Cu, Ag, or Ni. The thickness of the electrode layer may be in the range of 0.01 mm to 0.3 mm. Of course, in this case, the thickness of the protruding portion, that is, the contact region contacting with the thermoelectric element may be at least 0.0005 mm to 0.015 mm thicker than this thickness and 0.01 mm to 0.3 mm thicker than this thickness.

According to the structure of the electrode according to the embodiment of the present invention, the interval between the first substrate and the second substrate can be enlarged, and the ratio to the thermal equilibrium can be reduced to improve the thermoelectric efficiency. Further, in the case of the thermoelectric elements 120 and 130, considering the case where protrusions are not formed as shown in FIG. 1, the thickness of the thermoelectric elements 120 and 130 extends from the structure of FIG. 2 to the non- In this case, 5 to 100% of the same structure of the thermoelectric element in the case where the protruding portion is not realized in the electrode may be formed to have a larger width As shown in FIG.

The thermoelectric elements 120 and 130 may include the first semiconductor element 120 and the second semiconductor element 130 in one electrode and a plurality of such structures may be modularized as in the structure of FIG. . Particularly, in this case, the first semiconductor element 120 and the second semiconductor element 130 according to the present invention can be applied to a semiconductor device formed of a bulk type by applying a P-type semiconductor or an N-type semiconductor material. Bulk type refers to a structure obtained by grinding an ingot, which is a semiconductor material, followed by finishing a ball-mill process, and then cutting the sintered structure. Such a bulk type device can be formed in one integrated structure.

The p-type semiconductor or the n-type semiconductor material is characterized in that the n-type semiconductor element is at least one selected from the group consisting of Se, Ni, Al, Cu, Ag, Pb, (BiTe-based) including gallium (Ga), tellurium (Te), bismuth (Bi), and indium (In), and a bismuth telluride system (BiTe system) containing 0.001 to 1.0 wt% May be formed using a mixture of Bi or Te. For example, the main raw material may be a Bi-Se-Te material, and Bi or Te may be added to the Bi-Se-Te by adding a weight corresponding to 0.001 to 1.0 wt% When the weight of -Se-Te is 100 g, it is preferable to add Bi or Te to be added in the range of 0.001 g to 1.0 g. As described above, since the weight range of the substance added to the above-described raw material is not in the range of 0.001 wt% to 0.1 wt%, the thermal conductivity is not lowered and the electric conductivity is lowered, so that the improvement of the ZT value can not be expected. I have.

The P-type semiconductor material may be at least one selected from the group consisting of antimony (Sb), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium (BiTe-based) including Bi, Te, Bi, and In, and a mixture of Bi or Te corresponding to 0.001 to 1.0 wt% of the total weight of the main raw material It is preferable to form it by using. For example, the main raw material may be a Bi-Sb-Te material, and Bi or Te may be added to the Bi-Sb-Te by adding a weight corresponding to 0.001 to 1.0 wt% of the total weight of the Bi-Sb-Te. That is, when 100 g of Bi-Sb-Te is added, Bi or Te to be added may be added in the range of 0.001 g to 1 g. The weight range of the substance added to the above-described main raw material is not inferior to the range of 0.001 wt% to 0.1 wt%, and the electrical conductivity is lowered, so that improvement of the ZT value can not be expected.

In addition, the thermoelectric module including the thermoelectric device according to the embodiment of the present invention may be configured such that the structure of the thermoelectric device is realized as shown in FIG. 1, and that the first substrate and the second substrate have different volumes . In the embodiment of the present invention, 'volume' is defined as meaning the internal volume formed by the outer peripheral surface of the substrate.

In this case, in the case of the thermoelectric element, one of the first semiconductor element 120 and the second semiconductor element 130 may be formed of a P-type semiconductor and an N-type semiconductor as the second semiconductor element 130, The Peltier effect is realized by circuit lines 181 and 182 through which current is supplied to the semiconductor devices through the electrodes.

Particularly, in the present invention, the area of the second substrate 150 forming the hot side is formed to be larger than the area of the first substrate 140 forming the cold side by the Peltier effect, The heat conductivity can be increased and the heat radiation efficiency can be increased, so that the heat sink in the conventional thermoelectric module can be removed.

In addition, the structure of the thermoelectric device according to the embodiment of the present invention is realized by a structure having the same width as a cubic structure of a rectangular parallelepiped or a cuboid like the structure shown in Figs. 1 to 3, And the like.

That is, in the structure of FIGS. 1 and 2, the thermoelectric elements 120 and 130 may be formed in a structure in which the width of the surface is wide when corresponding to the protrusion of the electrode, as shown in FIG.

A thermoelectric element 120 according to an embodiment of the present invention includes a first element part 122 having a first cross-sectional area, a second element part 122 having a second cross-sectional area at a position facing the first element part 122 126, and a connecting portion 124 having a third cross-sectional area connecting the first element portion 122 and the second element portion 126. In this case, the cross-sectional area of the connecting portion 124 in an arbitrary region in the horizontal direction may be smaller than the first cross-sectional area and the second cross-sectional area.

In the case of applying the same material and the same amount of material as the thermoelectric element having a single cross-sectional area such as a cubic structure, it is possible to widen the area of the first element portion and the second element portion, The advantage of being able to increase the temperature difference DELTA T between the first element portion and the second element portion can be realized. When the temperature difference is increased, the amount of free electrons moving between the hot side and the cold side increases, so that the electricity generation amount increases, and in the case of heat generation or cooling, the efficiency increases.

Accordingly, the thermoelectric element 120 according to the present embodiment realizes a wide horizontal cross-sectional area of the first element portion and the second element portion, which are realized in a planar structure or other three-dimensional structure on the upper portion and the lower portion of the connection portion 124, So that the cross-sectional area of the connecting portion can be narrowed. Particularly, in the embodiment of the present invention, the width (B) of the section having the longest width among the horizontal sections of the connecting section and the width (A or or) of the larger section of the horizontal section area of the first element section and the second element section, C) is in the range of 1: (1.5 to 4). If the temperature is outside the range, the heat conduction is conducted from the heat generation side to the cooling side, and the power generation efficiency is lowered, or the heat generation and cooling efficiency are lowered.

In another aspect of this embodiment of the structure, in the thermoelectric element 120, the thickness a1 and a3 in the longitudinal direction of the first element portion and the second element are smaller than the longitudinal thickness s2 of the connecting portion .

Furthermore, in this embodiment, the first cross-sectional area of the first element portion 122 in the horizontal direction may be different from the second cross-sectional area of the second element portion 126 in the horizontal direction. This is to control the thermoelectric efficiency to easily control the desired temperature difference. Furthermore, the first element unit, the second element unit, and the connection unit may be formed integrally with each other. In this case, each of the components may be formed of the same material.

5 to 7, this is an embodiment for explaining another method of implementing the thermoelectric device according to the embodiment of the present invention described above with reference to FIGS. 1 to 4. FIG.

That is, in another embodiment of the present invention, the structure of the semiconductor device described above can be realized as a structure of a laminated structure rather than a bulk structure, thereby further improving the thinning and cooling efficiency.

Specifically, the structure of the first semiconductor element 120 and the second semiconductor element 130 in FIG. 5 is formed as a unit member in which a plurality of structures coated with a semiconductor material are stacked on a sheet-shaped substrate, It is possible to prevent the loss of the material and to improve the electric conduction characteristic.

Referring to FIG. 5, FIG. 5 is a conceptual diagram of a process for manufacturing the unit member of the above-described laminated structure. 5, the semiconductor layer 112 is formed by applying paste to a substrate 111 such as a sheet or a film to form a unitary member 110, . 5, a plurality of unit members 100a, 100b, and 100c are stacked to form a stacked structure, and then the stacked structure is cut to form the unit thermoelectric elements 120. [ That is, the unit thermoelectric element 120 according to the present invention may be formed of a structure in which a plurality of unit members 110 in which a semiconductor layer 112 is laminated on a substrate 111 are stacked.

The process of applying the semiconductor paste on the substrate 111 in the above-described process can be realized by various methods. For example, tape casting, that is, a very fine semiconductor material powder can be applied to a water- a slurry is prepared by mixing any one selected from a solvent, a binder, a plasticizer, a dispersant, a defoamer and a surfactant to prepare a slurry, And then molding it according to the desired thickness with a predetermined thickness. In this case, materials such as films and sheets having a thickness in the range of 10 to 100 μm can be used as the base material, and the P-type material and the N-type material for recycling the above-mentioned bulk type device can be applied as they are Of course.

In the step of laminating the unit members 110 in a multilayer structure, the laminate structure may be formed by pressing at a temperature of 50 ° C to 250 ° C. In the embodiment of the present invention, To 50 < / RTI > Thereafter, a cutting process can be performed in a desired shape and size, and a sintering process can be added.

The unit thermoelectric elements in which a plurality of unit members 110 manufactured in accordance with the above-described processes are stacked can secure the uniformity of thickness and shape size. That is, the conventional bulk-shaped thermoelectric element cuts the sintered bulk structure after the ingot grinding and fine-finishing ball-mill processes, so that a large amount of material is lost in the cutting process, However, in the unit thermoelectric element of the laminated structure according to the embodiment of the present invention, after the multilayer structure of sheet-like unit members is laminated, the sheet laminate It is possible to achieve uniformity of the bar material having a uniform thickness of the material and thickness of the whole unit thermoelectric device to be as thin as 1.5 mm or less, . The structure finally implemented may be cut into a cube or a rectangular parallelepiped structure as in the structure of the thermoelectric device according to the embodiment of the present invention described above with reference to FIG. 1, or the shape of FIG. 4 may be implemented, As shown in FIG.

Particularly, in the step of manufacturing a unit thermoelectric element according to the embodiment of the present invention, a step of forming a conductive layer on the surface of each unit member 110 in the step of forming a laminated structure of the unit member 110 is further implemented .

That is, the conductive layer as shown in Fig. 6 can be formed between the unit members of the laminated structure of Fig. 5 (c). The conductive layer may be formed on the opposite side of the substrate surface on which the semiconductor layer is formed. In this case, the conductive layer may be formed as a patterned layer such that a region where the surface of the unit member is exposed is formed. As a result, the electrical conductivity can be increased, the bonding force between the unit members can be improved, and the advantage of lowering the thermal conductivity can be realized.

6 shows various modifications of the conductive layer C according to the embodiment of the present invention. The pattern in which the surface of the unit member is exposed includes the patterns shown in FIGS. 6 (a) and 6 (b) the, as shown in, the closed opening pattern (c 1, c 2) mesh-type structure, or, as shown in (c), (d) of Figure 6, the open aperture pattern including (c 3, c 4) And a line type including a line type. The conductive layer is advantageous in that not only the adhesion between the unit members in the unit thermoelectric elements formed by the laminated structure of the unit members but also the thermal conductivity between the unit members is lowered and the electrical conductivity is improved, The cooling capacity (Qc) and? T (占 폚) of the bulk-type thermoelectric element are improved, and particularly the power factor is 1.5 times, that is, the electric conductivity is increased 1.5 times. The increase of the electric conductivity is directly related to the improvement of the thermoelectric efficiency, so that the cooling efficiency is improved. The conductive layer may be formed of a metal material, and metal materials of Cu, Ag, Ni, or the like may be used.

In the case where the unit thermoelectric element having the above-described laminated structure is applied to the thermoelectric module shown in FIGS. 1 and 4, that is, between the first substrate 140 and the second substrate 150, When a thermoelectric module is implemented as a unit cell having a structure including an electrode layer and a dielectric layer, the total thickness Th can be formed within a range of 1. mm to 1.5 mm, It is possible to achieve remarkable thinning compared to the use.

7, the thermoelectric elements 120 and 130 described above in FIG. 5 are arranged horizontally in the upper direction X and the lower direction Y, as shown in FIG. 6 (a) The thermoelectric element according to the embodiment of the present invention can be realized by cutting it as shown in (c).

7 (c) can form a thermoelectric module with a structure in which the surfaces of the first and second substrates and the semiconductor layer and the substrate are arranged to be adjacent to each other. However, as shown in (b) It is also possible to construct the device itself vertically so that the side portions of the unit thermoelectric elements are arranged adjacent to the first and second substrates. In such a structure, the end portion of the conductive layer is exposed to the side surface rather than the horizontal arrangement structure, thereby lowering the heat conduction efficiency in the vertical direction and improving the electric conduction characteristic, thereby further improving the cooling efficiency.

As described above, in the thermoelectric device applied to the thermoelectric module of the present invention, which can be implemented in various embodiments, the shapes and sizes of the first semiconductor element and the second semiconductor element facing each other are the same, Considering the fact that the electrical conductivity of the semiconductor element and the electrical conductivity of the N-type semiconductor element are different from each other and serve as an element that hinders the cooling efficiency, the volume of one of them is formed differently from the volume of other semiconductor elements opposed to each other So that the cooling performance can be improved.

In other words, the formation of the semiconductor elements arranged in mutually opposing directions in different volumes can be achieved by forming the entire shape differently, or by forming the diameter of one of the semiconductor elements having the same height wider, It is possible to implement the method of making the height or the cross-section diameter different. In particular, the diameter of the N-type semiconductor device may be larger than that of the P-type semiconductor device so that the volume of the N-type semiconductor device may be increased to improve the thermoelectric efficiency.

As described above, the thermoelectric elements having various structures according to one embodiment of the present invention and the thermoelectric module including the thermoelectric elements according to the embodiments of the present invention can be applied to the power generation module or the upper and lower substrates, Or the like, to realize cooling, or to transmit heat to a specific medium to be heated. That is, in the thermoelectric module according to various embodiments of the present invention, the configuration of the cooling device for improving the cooling efficiency is described in the embodiment mode. However, in the substrate on the opposite side where cooling is performed, It can be applied to the device used. That is, it can be applied to a device that implements cooling and heating simultaneously in one device.

In the foregoing detailed description of the present invention, specific examples have been described. However, various modifications are possible within the scope of the present invention. The technical spirit of the present invention should not be limited to the above-described embodiments of the present invention, but should be determined by the claims and equivalents thereof.

110: unit member
111: substrate
112: semiconductor layer
120: thermoelectric element
122: first element part
124:
126: Second element part
130: thermoelectric element
132: first element part
134:
136: second element part
140: first substrate
150: second substrate
160a and 160b:
170a and 170b:
181, 182: circuit line

Claims (7)

A plasma display panel comprising: a first substrate having a first electrode;
A second substrate facing the first substrate and having a second electrode; And
A plurality of thermoelectric elements disposed between the first substrate and the second substrate and electrically connected to the first electrode and the second electrode;
Wherein the first electrode and the second electrode have a thicker contact region with the thermoelectric element than a non-contact region.
The method according to claim 1,
Wherein the first electrode and the second electrode are made of a metal,
Wherein the thickness a of the contact area is 0.05 to 1.0 times b times the thickness of the non-contact area b.
The method according to claim 1,
The contact region
Wherein the area corresponding to the contact surface of the first electrode and the second electrode protrudes from the non-contact area.
The method according to claim 1,
The thermoelectric element includes:
a first semiconductor element which is a p-type thermoelectric semiconductor and a second semiconductor element which is an n-type thermoelectric semiconductor,
Wherein the volume of the second semiconductor element is larger than the volume of the first semiconductor element.
The method of claim 4,
Wherein the first substrate and the second substrate have different volumes.
The method of claim 5,
Wherein the area of the second substrate is larger than the area of the first substrate.
The method of claim 6,
Wherein the thickness of the first substrate is thinner than the thickness of the second substrate.
KR1020150046045A 2015-04-01 2015-04-01 Thermoelectric device moudule and device using the same KR20160117944A (en)

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WO2018080027A1 (en) * 2016-10-31 2018-05-03 주식회사 테그웨이 Flexible thermoelectric module and thermoelectric apparatus comprising same
US10533780B2 (en) 2017-08-31 2020-01-14 Tegway Co., Ltd. Feedback device and method of providing thermal feedback using the same
US10561374B2 (en) 2016-10-31 2020-02-18 Tegway Co., Ltd. Feedback device and method for providing thermal feedback using the same
KR20200034983A (en) * 2018-04-04 2020-04-01 엘지이노텍 주식회사 Thermoelectric element
US10736576B2 (en) 2016-10-31 2020-08-11 Tegway Co., Ltd. Feedback device and method for providing thermal feedback using the same
US10747323B2 (en) 2016-10-31 2020-08-18 Tegway Co., Ltd. Feedback device and method for providing thermal feedback by means of same
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US11813089B2 (en) 2016-10-31 2023-11-14 Tegway Co., Ltd. Feedback device and method for providing thermal feedback using the same
US10561374B2 (en) 2016-10-31 2020-02-18 Tegway Co., Ltd. Feedback device and method for providing thermal feedback using the same
WO2018080027A1 (en) * 2016-10-31 2018-05-03 주식회사 테그웨이 Flexible thermoelectric module and thermoelectric apparatus comprising same
US10736576B2 (en) 2016-10-31 2020-08-11 Tegway Co., Ltd. Feedback device and method for providing thermal feedback using the same
US10747323B2 (en) 2016-10-31 2020-08-18 Tegway Co., Ltd. Feedback device and method for providing thermal feedback by means of same
US11755116B2 (en) 2016-10-31 2023-09-12 Tegway Co., Ltd. Feedback device and method for providing thermal feedback by means of same
US11118819B2 (en) 2016-10-31 2021-09-14 Tegway Co., Ltd. Feedback device and thermal feedback providing method using same
US11191491B2 (en) 2016-10-31 2021-12-07 Tegway Co., Ltd. Feedback device and method for providing thermal feedback using the same
US11207032B2 (en) 2016-10-31 2021-12-28 Tegway Co., Ltd. Feedback device and method for providing thermal feedback using the same
US11287890B2 (en) 2016-10-31 2022-03-29 Tegway Co., Ltd. Feedback device and method for providing thermal feedback by means of same
US11612358B2 (en) 2016-10-31 2023-03-28 Tegway Co., Ltd. Feedback device and method for providing thermal feedback using the same
US11747056B2 (en) 2016-10-31 2023-09-05 Tegway Co., Ltd. Feedback device and thermal feedback providing method using same
US10533780B2 (en) 2017-08-31 2020-01-14 Tegway Co., Ltd. Feedback device and method of providing thermal feedback using the same
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JP2021520627A (en) * 2018-04-04 2021-08-19 エルジー イノテック カンパニー リミテッド Thermoelectric element

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