KR102412389B1 - Thermoelectric device moudule and device using the same - Google Patents

Abstract

An embodiment of the present invention relates to a structure capable of increasing the mounting range of a thermoelectric module efficiently. In particular, in an embodiment of the present invention, a first substrate having a plurality of first electrodes; a second substrate facing the first substrate and having a plurality of second electrodes; and a plurality of thermoelectric elements disposed between the first substrate and the second substrate and electrically connected to the first electrode and the second electrode, wherein the thermoelectric element passes through the first substrate or the second substrate To provide a thermoelectric module further comprising a wiring connection hole.

Description

Thermoelectric module and thermal conversion device including same

An embodiment of the present invention relates to a structure capable of increasing the mounting range of a thermoelectric module efficiently.

In general, a thermoelectric element including a thermoelectric conversion element has a structure in which a P-type thermoelectric material and an N-type thermoelectric material are bonded between metal electrodes to form a PN junction pair. When a temperature difference is applied between these PN junction pairs, power is generated by the Seeback effect, so that the thermoelectric element can function as a power generating device. In addition, due to the Peltier effect in which one side of a PN junction pair is cooled and the other is heated, thermoelectric elements can also be used as temperature control devices.

Such a thermoelectric element is applied to a device for cooling or heating, or equipment for power generation, so that various thermal conversion effects can be realized. A thermoelectric element applied to a cooling and warming device may be used as a temperature control device due to the Peltier effect in which one side of a PN junction pair is cooled and the other side is heated. Accordingly, interest is focused on a method capable of increasing the efficiency of the thermoelectric element.

In particular, due to the characteristics of the thermoelectric module applied to various equipment, there is a need to expand the application range by improving the convenience of mounting.

An embodiment of the present invention has been devised to solve the above-described problem, and in particular, a through-hole for exposing an electrode on a substrate facing each other is implemented, and a connecting member having a conductive pin structure that can be connected to an external terminal here It is possible to provide a thermoelectric module that can be directly mounted on the equipment that needs to be applied without a separate lead wire.

As a means for solving the above problems, in an embodiment of the present invention, a first substrate having a plurality of first electrodes; a second substrate facing the first substrate and having a plurality of second electrodes; and a plurality of thermoelectric elements disposed between the first substrate and the second substrate and electrically connected to the first electrode and the second electrode, wherein the thermoelectric element passes through the first substrate or the second substrate To provide a thermoelectric module further comprising a wiring connection hole.

According to an embodiment of the present invention, a through hole for exposing an electrode is implemented in a substrate facing each other, and a connection member having a conductive pin structure that can be connected to an external terminal is provided, so that application is required without a separate conducting wire. This has the effect of providing a thermoelectric module that can be directly mounted on the equipment.

In particular, since separate wiring can be combined with a connecting structure rather than soldering or bonding, it is easy to remove and maintain, and excellent applicability is guaranteed.

According to another embodiment of the present invention, by forming different areas of the first substrate and the second substrate to increase heat dissipation efficiency, the thermoelectric module can be made thinner. In particular, when the area of the first substrate and the second substrate are formed differently, the heat transfer rate is increased by forming a large area of the substrate on the heat dissipation side, thereby eliminating the heat sink to realize the miniaturization and thinness of the cooling device. do.

In addition, according to another embodiment of the present invention, by stacking unit members including a semiconductor layer on a sheet substrate to implement a thermoelectric element, the thermal conductivity is lowered and the electrical conductivity is increased, so that the cooling capacity (Qc) and the temperature change rate ( It is possible to provide a thermoelectric element and a thermoelectric module in which ΔT) is remarkably improved. In addition, it is possible to maximize electrical conductivity by including a conductive pattern layer between the unit members of the stacked structure, and there is an effect that the thickness is significantly reduced compared to the overall bulk-type thermoelectric element.

Furthermore, according to another embodiment of the present invention, the thermoelectric element itself has a structure in which the width of the upper and lower portions is wider than the width of the center, thereby maximizing the thermoelectric efficiency, so that the power generation efficiency can be increased with the same amount of material. do. In particular, this has the effect of reducing the material cost of the thermoelectric element for equivalent power generation performance.

1 and 2 are conceptual views illustrating main parts of a thermoelectric module according to an embodiment of the present invention.
3 to 5 are conceptual diagrams illustrating a modified example of a thermoelectric module according to an embodiment of the present invention.
6 is a conceptual diagram illustrating another structure of a thermoelectric element according to an embodiment of the present invention.
7 to 9 are exemplary views of a thermoelectric element according to another embodiment of the present invention.

Hereinafter, the configuration and operation according to the present invention will be described in detail with reference to the accompanying drawings. In the description with reference to the accompanying drawings, the same components are given the same reference, regardless of the reference numerals, and a redundant description thereof will be omitted. Terms such as first, second, etc. may be used to describe various elements, but the elements should not be limited by the terms. The above terms are used only for the purpose of distinguishing one component from another.

1 is a conceptual diagram for explaining the structure of a thermoelectric module according to an embodiment of the present invention, and FIG. 2 is a conceptual diagram illustrating an example of operation of the thermoelectric module according to an embodiment of the present invention.

1 and 2 , a thermoelectric module 100 according to an embodiment of the present invention includes a first substrate 140 having a plurality of first electrodes 160a, and a second substrate 150 having a plurality of second electrodes 160b and disposed between the first substrate and the second substrate, and electrically connected to the first electrode and the second electrode It includes a plurality of thermoelectric elements (120, 130). In particular, the thermoelectric module 100 may be configured to further include a wiring connection hole S penetrating the first substrate or the second substrate.

As shown in FIG. 1 , the wiring connection hole S is a conductive member having a structure electrically connected to the first electrode or the second electrode disposed on the inner surface of the first substrate or the second substrate. It may be configured to further include (161). The conductive member 161 is coupled in a structure to be inserted into the connection terminal G implemented on the mounting object T of the thermoelectric module 100 later so that it can be electrically connected to the thermoelectric module. Through this, the thermoelectric module according to the embodiment of the present invention does not require bonding or soldering using a separate wire or conducting wire, and has a simple structure because the electrode and the target device can be directly coupled in a connecting structure. This can be done so that the convenience of installation and maintenance can be secured.

The wiring connection hole S may be disposed on the first substrate 140 or the second substrate 150 as shown in FIG. 1 , and basically the first electrode 160a or the second electrode In a structure in which the surface of 160b is exposed, it can be disposed on the first substrate or the second substrate. Of course, in the illustrated structure, the hole structure of the wiring connection hole is implemented in a straight shape, but as a modification, it may be implemented in a structure in which the wiring connection hole is bent, a conductive material is filled in the wiring connection hole, and the surface of the wiring connection hole It is also possible to implement a structure in which a conductive member of a fin structure coupled to a conductive material exposed to the fin is coupled. This modified example has an advantage in that the degree of freedom that can be implemented in a structure that can be easily designed for design change is guaranteed when deformation is required from the basic structure to implement the coupling site in various equipment.

As another example of such a structure, as in the case of FIGS. 3 and 4 , even in a thermoelectric module having a structure including a plurality of unit cells (a structure in which a pair of thermoelectric elements are disposed between a substrate), adjacent ones disposed in the outer shell A structure in which each electrode part (for example, a first electrode part) of the unit cell Tx is connected with a conductive pattern 163, and a pattern is implemented on an inner wall of a wiring connection hole and an upper part of the first substrate (FIG. 4) It is also possible to implement That is, the structure of the first electrode disposed on each of the other thermoelectric elements 130 adjacent to the thermoelectric element 120 is implemented as a bent structure as shown in FIG. 4 , so that the inner wall of the wiring connection hole and the first substrate 140 are formed. ), when implemented as a structure of the conductive pattern 163 implemented by extending to the outside, it is also possible to implement a structure in which power can be applied through one wiring connection hole.

Alternatively, as shown in FIG. 4 , in a thermoelectric module having a structure including a plurality of unit cells between opposing substrates, two wiring connection holes are implemented in a substrate, respectively, and a conductive member S is implemented respectively. It is also possible to implement it by transforming it into

Accordingly, in the structure of the thermoelectric module according to the embodiment of the present invention described above, it is possible to implement one or two or more wiring connection holes, and due to the conductive member or conductive pattern structure provided in these wiring connection holes, external It becomes possible to simplify the power supply structure of the device or to simplify the mounting structure.

Hereinafter, another configuration of the thermoelectric module according to an embodiment of the present invention will be described.

Referring to FIG. 5 , the first substrate 140 and the second substrate 150 disposed to face each other applied to the thermoelectric module according to the embodiment of the present invention are usually an insulating substrate, such as an alumina substrate, or having flexibility. A polymer resin may be used, or in the case of an embodiment of the present invention, heat dissipation efficiency and thinning may be realized by using a metal substrate. Of course, when a metal substrate is used, a separate dielectric layer (not shown) is formed on the contact surface between the first and second electrodes 160a and 160b embedded in the first and second substrates 140 and 150 . It is preferable to further include. Furthermore, even in the case of a wiring connection hole, it can be implemented so that it can be insulated through an insulating film. In the case of a metal substrate, Cu or Cu alloy, Cu-Al alloy, etc. can be applied. Furthermore, a substrate having flexibility may be applied to the substrate according to the embodiment of the present invention. These are polyimide (PI), polystyrene (PS), polymethyl methacrylate (PMMA), cyclic olefin copoly (COC), polyethylene terephthalate (PET), high permeability plastics such as resin (resin), such as various insulating properties A resin material can be used.

In addition, in another embodiment according to the present invention, the area of the second substrate 150 may be formed in a range of 1.2 to 5 times the area of the first substrate 140 to form different volumes. That is, even in the drawing shown in FIG. 3 , the width of the first substrate 140 is formed to be narrower than the width of the second substrate 150 , and in this case, the areas of the substrates of the same thickness are formed to be different from each other, so that the volume is different. do.

In this case, when the area of the second substrate 150 is formed to be less than 1.2 times that of the first substrate 140, there is no significant difference from the existing heat conduction efficiency, so there is no meaning of thinning, and when it exceeds 5 times, the thermoelectric module It is difficult to maintain the shape (eg, opposing structures facing each other), and the heat transfer efficiency is significantly reduced.

In addition, in the case of the second substrate 150, a heat dissipation pattern (not shown), such as an uneven pattern, is formed on the surface of the second substrate to maximize the heat dissipation characteristics of the second substrate, and through this, the existing heat sink It is possible to secure more efficient heat dissipation characteristics even by deleting the configuration of In this case, the heat dissipation pattern may be formed on one or both of the surfaces of the second substrate. In particular, when the heat dissipation pattern is formed on a surface in contact with the first and second semiconductor devices, heat dissipation characteristics and bonding characteristics between the thermoelectric device and the substrate may be improved. In addition, by forming the thickness of the first substrate 140 thinner than the thickness of the second substrate 150 , it is possible to facilitate the inflow of heat from the cold sied and to increase the heat transfer rate.

The first and second electrodes 160a and 160b electrically connect the first semiconductor element 120 and the second semiconductor element 130, which are thermoelectric elements, by using an electrode material such as Cu, Ag, or Ni. The thickness of the electrode layer may be formed in the range of 0.01mm ~ 0.3mm. More preferably, it can be implemented in a range of 10 μm to 20 μm.

In this case, as for the thermoelectric elements 120 and 130 , the first semiconductor element 120 and the second semiconductor element 130 may be provided on one electrode, and a plurality of these structures may be modularized as in the structure of FIG. 3 . be able to In particular, in this case, the first semiconductor device 120 and the second semiconductor device 130 according to the present invention may be a semiconductor device formed in a bulk type by applying a P-type semiconductor or an N-type semiconductor material. The bulk type refers to a structure formed by pulverizing an ingot, which is a semiconductor material, followed by a miniaturization ball-mill process, and then cutting a sintered structure. Such a bulk-type device may be formed as one integrated structure.

The P-type semiconductor or N-type semiconductor material is the N-type semiconductor device, selenium (Se), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B) ), gallium (Ga), tellurium (Te), bismuth (Bi), and a main raw material consisting of a bismuth telluride-based (BiTe-based) containing indium (In), and 0.001 to 1.0 wt% of the total weight of the main raw material It can be formed using a mixture of Bi or Te corresponding to . For example, the main raw material may be a Bi-Se-Te material, and Bi or Te may be formed by adding a weight corresponding to 00.001 to 1.0 wt% of the total weight of Bi-Se-Te. That is, Bi When the weight of -Se-Te is 100 g, it is preferable to add Bi or Te to be added in the range of 0.001 g to 1.0 g. As described above, the weight range of the material added to the above-described main raw material is significant in that, outside the range of 0.001 wt% to 0.1 wt%, the thermal conductivity does not decrease and the electrical conductivity does not decrease, so improvement of the ZT value cannot be expected. have

The P-type semiconductor material is antimony (Sb), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium (Ga), tellurium ( A mixture of a main raw material consisting of bismuth telluride (BiTe) including Te), bismuth (Bi), and indium (In), and Bi or Te corresponding to 0.001 to 1.0 wt% of the total weight of the main raw material It is preferable to form using For example, the main raw material may be a Bi-Sb-Te material, and Bi or Te may be formed by further adding a weight corresponding to 0.001 to 1.0 wt% of the total weight of Bi-Sb-Te. That is, when 100 g of Bi-Sb-Te is added, the additionally mixed Bi or Te may be added in the range of 0.001 g to 1 g. The weight range of the material added to the above-mentioned main raw material is significant in that, outside the range of 0.001 wt% to 0.1 wt%, the thermal conductivity does not decrease and the electrical conductivity decreases, so that the improvement of the ZT value cannot be expected.

In addition, the thermoelectric module including the thermoelectric element according to the embodiment of the present invention implements the structure of the thermoelectric element as shown in FIG. 1 , and the first substrate and the second substrate have different volumes. make it possible In the embodiment of the present invention, the term 'volume' is defined to mean an internal volume formed by the outer circumferential surface of the substrate.

In this case, in the case of the thermoelectric element, one side of the first semiconductor element 120 is a P-type semiconductor and the second semiconductor element 130 is an N-type semiconductor, and the first semiconductor and the second semiconductor are metal electrodes. The Peltier effect is realized by the conductive member S connected to the 160a and 160b, a plurality of such structures are formed, and a current is supplied to the semiconductor device through an electrode.

In particular, in the present invention, by the Peltier effect, the area of the second substrate 150 forming the heat dissipation area (Hot side) can be formed wider than the area of the first substrate 140 forming the cooling area (Cold side). It is possible to remove the heat sink in the conventional thermoelectric module by increasing the thermal conductivity and heat dissipation efficiency.

In addition, the structure of the thermoelectric element according to the embodiment of the present invention is shown in FIG. 6 , in addition to being implemented as a structure having the same width as the three-dimensional structure of a cylindrical, rectangular parallelepiped or cube as shown in FIGS. 1 to 3 . It may have the same shape as the built-in structure.

Specifically, the thermoelectric element to which the present invention is applied to the thermoelectric module according to the embodiment, as shown in FIG. 6 , is formed on the exposed surfaces of the first and second electrodes accommodated on the first and second substrates. It may be implemented in a structure in which the width of the joining portion is wide.

6, the thermoelectric element 120 according to another embodiment of the present invention includes a first element unit 122 having a first cross-sectional area, the first element unit 122 and A structure including a second element portion 126 having a second cross-sectional area at an opposing position and a connecting portion 124 having a third cross-sectional area connecting the first element portion 122 and the second element portion 126 to each other can be implemented as In particular, in this case, the cross-sectional area of the connection part 124 in an arbitrary area in the horizontal direction may be provided to be smaller than the first cross-sectional area and the second cross-sectional area.

This structure has the same material and when the same amount of material as a thermoelectric element having a structure having a single cross-sectional area such as a cube structure is applied, the area of the first element part and the second element part is widened, and the length of the connection part can be implemented in the road As a result, the advantage of increasing the temperature difference ΔT between the first element part and the second element part can be realized. If the temperature difference is increased, the amount of free electrons moving between the hot side and the cold side increases, thereby increasing the amount of electricity generated, and the efficiency increases in the case of heat generation or cooling.

Accordingly, the thermoelectric element 120 according to the present embodiment has a wide horizontal cross-sectional area of the first element part and the second element part implemented in a flat structure or other three-dimensional structure on the upper and lower portions of the connection part 124 , and the connection part By extending the length, it is possible to narrow the cross-sectional area of the connection part. In particular, in the embodiment of the present invention, the width (B) of the cross-section having the longest width among the horizontal cross-sections of the connection part, and the width (A or Let the ratio of C) be implemented in a range that satisfies the range of 1: (1.5~4). When it is out of this range, heat conduction is conducted from the heat generating side to the cooling side, and the power generation efficiency is rather reduced, or the heat generation or cooling efficiency is lowered.

In another aspect of the embodiment of this structure, in the thermoelectric element 120 , the lengthwise thicknesses a1 and a3 of the first element portion and the second element are smaller than the lengthwise thickness a2 of the connection portion. It may be formed to be implemented.

Furthermore, in the present embodiment, the first cross-sectional area of the first element unit 122 in the horizontal direction and the second cross-sectional area of the second element unit 126 in the horizontal direction may be different from each other. This is to easily control the desired temperature difference by adjusting the thermoelectric efficiency. Furthermore, the first element part, the second element part, and the connection part may have a structure that is integrally implemented with each other, and in this case, each of the components may be implemented with the same material as each other.

In addition, referring to FIGS. 7 to 9 , this is an embodiment illustrating another method of implementing the thermoelectric element according to the embodiment of the present invention described above with reference to FIGS. 1 to 6 .

That is, in another embodiment of the present invention, the structure of the semiconductor device described above may be implemented as a structure of a stacked structure rather than a bulk type structure, thereby making it possible to further improve the thickness and cooling efficiency.

Specifically, the structure of the first semiconductor device 120 and the second semiconductor device 130 in FIG. 7 is formed as a unit member in which a plurality of structures coated with a semiconductor material are stacked on a sheet-shaped substrate and then cut. It can prevent material loss and improve electrical conductivity.

Referring to FIG. 7 in this regard, FIG. 7 is a conceptual diagram illustrating a process for manufacturing the unit member having the above-described stacked structure. According to FIG. 7 , a material including a semiconductor material is prepared in the form of a paste, and the paste is applied on a substrate 111 such as a sheet or film to form a semiconductor layer 112 to form one unit member 110 . to form The unit member 110 forms a stacked structure by stacking a plurality of unit members 100a, 100b, and 100c as shown in FIG. 7 , and then cutting the stacked structure to form a unit thermoelectric element 120 . That is, the unit thermoelectric element 120 according to the present invention may be formed in a structure in which a plurality of unit members 110 in which a semiconductor layer 112 is laminated on a substrate 111 are laminated.

In the above-described process, the process of applying the semiconductor paste on the substrate 111 may be implemented using various methods, for example, tape casting, that is, a very fine semiconductor material powder in an aqueous or non-aqueous solvent ( solvent) and a binder, a plasticizer, a dispersant, a defoamer, and a surfactant to prepare a slurry, and then use a moving blade or moving carrier. It can be implemented as a process of molding according to the desired purpose with a constant thickness above. In this case, the thickness of the substrate can use materials such as films and sheets in the range of 10 μm to 100 μm, and as the semiconductor material to be applied, the P-type material and N-type material for manufacturing the bulk-type device described above can be applied as it is. Of course.

The process of arranging and stacking the unit members 110 in multiple layers can be formed into a stacked structure by pressing at a temperature of 50° C. to 250° C., and in the embodiment of the present invention, the number of stacking of these unit members 110 is 2 It can be done in the range of ~50. Thereafter, a cutting process may be performed to a desired shape and size, and a sintering process may be added.

The unit thermoelectric element formed by stacking a plurality of unit members 110 manufactured according to the above-described process can ensure uniformity in thickness and shape size. That is, the conventional bulk-shaped thermoelectric element cuts the sintered bulk structure after ingot pulverization and miniaturization ball-mill processes. It was difficult to cut to one size, and there was a problem in that it was difficult to reduce the thickness due to the thickness of 3 mm to 5 mm. There is almost no material loss, the material has a uniform thickness, and the uniformity of the material can be secured. application becomes possible. The finally implemented structure is like the structure of the thermoelectric element according to the embodiment of the present invention described above in FIGS. 1 to 5, cut into a cylindrical structure, a cube or a rectangular parallelepiped structure, or by implementing the shape of FIG. It can be realized by cutting into the shape of (d).

In particular, in the manufacturing process of the unit thermoelectric element according to the embodiment of the present invention, a process of forming a conductive layer on the surface of each unit member 110 during the process of forming the stacked structure of the unit members 110 is further included. can make it happen

That is, the conductive layer having the structure of FIG. 8 may be formed between the unit members of the stacked structure of FIG. 7C . The conductive layer may be formed on a surface opposite to the surface of the substrate on which the semiconductor layer is formed. This can increase the electrical conductivity compared to the case of full-surface coating, and at the same time improve the bonding force between each unit member, and realize the advantage of lowering the thermal conductivity.

That is, what is shown in FIG. 8 shows various modifications of the conductive layer (C) according to the embodiment of the present invention, and the pattern in which the surface of the unit member is exposed is shown in FIGS. 8(a) and (b) As shown in, a mesh-type structure including a closed opening pattern (c ₁ , c ₂ ) or an open opening pattern (c ₃ , c ₄ ) as shown in (c) and (d) of FIG. 8 ) It can be designed with various modifications to a line type including The above conductive layer not only increases the adhesive force between the unit members inside the unit thermoelectric element formed in a stacked structure of unit members, but also lowers the thermal conductivity between the unit members and improves the electrical conductivity. The cooling capacity (Qc) and ΔT (°C) are improved compared to the bulk type thermoelectric element, and in particular, the power factor is increased by 1.5 times, that is, the electrical conductivity is increased by 1.5 times. The increase in electrical conductivity is directly related to the improvement of thermoelectric efficiency, and thus the cooling efficiency is improved. The conductive layer may be formed of a metal material, and all metal-based electrode materials made of Cu, Ag, Ni, and the like are applicable.

When the unit thermoelectric element of the stacked structure described above in FIG. 7 is applied to the thermoelectric module shown in FIGS. 1 and 6 , that is, between the first substrate 140 and the second substrate 150 in the embodiment of the present invention. In the case of implementing a thermoelectric module with a unit cell having a structure including an electrode layer by disposing a thermoelectric element according to the Compared to that, it is possible to realize a remarkable reduction in thickness.

In addition, as shown in FIG. 9 , the thermoelectric elements 120 and 130 described above in FIG. 7 are horizontally arranged in an upper direction (X) and a lower direction (Y), as shown in (a) of FIG. 8 . The thermoelectric element according to the embodiment of the present invention may be implemented by arranging it so as to be able to, and cutting it as in (c).

In the structure of FIG. 9(c), the thermoelectric module may be formed in a structure in which the first and second substrates and the semiconductor layer and the surfaces of the substrate are adjacent to each other, but as shown in (b), the thermoelectric module A structure in which the device itself is erected vertically so that side portions of the unit thermoelectric device are disposed adjacent to the first and second substrates is also possible. In such a structure, the distal end of the conductive layer is exposed on the side surface than in the horizontal arrangement structure, and the cooling efficiency can be further increased by lowering the heat conduction efficiency in the vertical direction and improving the electric conductivity characteristics at the same time.

As described above, in the thermoelectric element applied to the thermoelectric module of the present invention that can be implemented in various embodiments, the shapes and sizes of the first semiconductor element and the second semiconductor element facing each other are the same, but in this case, the P-type Considering that the electrical conductivity of the semiconductor device and the electrical conductivity characteristics of the N-type semiconductor device are different from each other and act as a factor impeding the cooling efficiency, one volume is formed differently from the volume of the other semiconductor device facing each other It is also possible to improve the cooling performance.

In other words, differently forming the volumes of the semiconductor devices disposed opposite to each other is to form a largely different overall shape, to widen the diameter of one of the cross-sections in a semiconductor device having the same height, or to form a semiconductor device having the same shape. It is possible to implement in a way that the height or the diameter of the cross section is different. In particular, by forming the diameter of the N-type semiconductor device larger than that of the P-type semiconductor device, the volume can be increased to improve the thermoelectric efficiency.

The thermoelectric element of various structures and the thermoelectric module including the same according to the embodiment of the present invention described above are water or liquid depending on the characteristics of the heat generation and heat absorbing parts on the surface of the power generation module or the upper and lower substrates as described above. It can be used for cooling by taking heat from a medium, such as, or for heating by transferring heat to a specific medium. That is, in the thermoelectric module of various embodiments of the present invention, the configuration of a cooling device implemented by improving cooling efficiency is described as an embodiment, but the substrate on the opposite side of which cooling is performed is used for heating a medium using heat generation characteristics. It can be applied to the device being used. That is, it can be applied to equipment that implements cooling and heating functions in one device at the same time.

In the detailed description of the present invention as described above, specific embodiments have been described. However, various modifications are possible without departing from the scope of the present invention. The technical spirit of the present invention should not be limited to the above-described embodiments of the present invention, and should be defined by the claims as well as the claims and equivalents.

110: unit member
111: description
112: semiconductor layer
120: thermoelectric element
122: first element unit
124: connection
126: second element unit
130: thermoelectric element
132: first element unit
134: connection
136: second element unit
140: first substrate
150: second substrate
160a, 160b: electrode layer
161: conductive member
162: challenge pattern
S: wiring connection hole

Claims (12)

a first substrate;
a first electrode unit including a plurality of first electrodes disposed on the first substrate;
a semiconductor device unit including a plurality of semiconductor devices disposed on the first electrode unit;
a second electrode unit including a plurality of second electrodes disposed on the semiconductor element unit; and
a second substrate disposed so that the second electrode part and the first surface face each other;
The second substrate is
and a pair of wiring connection holes formed to each hole between the first surface and a second surface opposite to the first surface on a pair of second electrodes spaced apart from each other among the second electrode parts,
It is disposed in the pair of wiring connection holes, further comprising a pair of first conductive members connected to the pair of second electrodes,
Each of the pair of wiring connection holes overlaps the first substrate in a first direction from the second surface toward the first surface,
The pair of wiring connection holes overlap each other in a second direction perpendicular to the first direction,
Further comprising a pair of second conductive members in contact with the pair of first conductive members,
A thickness of each of the pair of second conductive members in the first direction is greater than a thickness of the second substrate;
A width of each of the pair of second conductive members in the second direction perpendicular to the first direction is smaller than a width of each of the pair of wiring connection holes. delete delete delete According to claim 1,
The pair of first conductive members are in contact with side surfaces of the pair of wiring connection holes. 6. The method of claim 5,
Each of the pair of second electrodes is integrally formed with each of the pair of first conductive members. 6. The method of claim 5,
At least a portion of the pair of first conductive members is in contact with the second surface. 8. The method of claim 7,
An area of the first substrate and an area of the second substrate are different from each other. 9. The method of claim 8,
An area of the second substrate is 1.2 to 5 times that of the first substrate. 8. The method of claim 7,
At least a portion of the surface of the pair of first conductive members is exposed on the second surface. 11. The method of claim 10,
An upper surface of each of the pair of first conductive members extends from a contact portion of the side surface of the thermoelectric module. 6. The method of claim 5,
The thermoelectric module in which the pair of first conductive members is not disposed at the center of each of the pair of wiring connection holes.

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