KR20160119411A - Semiconductor package module - Google Patents

Semiconductor package module Download PDF

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Publication number
KR20160119411A
KR20160119411A KR1020150047755A KR20150047755A KR20160119411A KR 20160119411 A KR20160119411 A KR 20160119411A KR 1020150047755 A KR1020150047755 A KR 1020150047755A KR 20150047755 A KR20150047755 A KR 20150047755A KR 20160119411 A KR20160119411 A KR 20160119411A
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KR
South Korea
Prior art keywords
circuit board
package substrate
magnetic material
material layer
substrate
Prior art date
Application number
KR1020150047755A
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Korean (ko)
Inventor
민복규
정요셉
Original Assignee
에스케이하이닉스 주식회사
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Priority to KR1020150047755A priority Critical patent/KR20160119411A/en
Publication of KR20160119411A publication Critical patent/KR20160119411A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15158—Shape the die mounting substrate being other than a cuboid
    • H01L2924/15159—Side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

A semiconductor package includes: a circuit board having a first surface and a second surface opposite to the first surface, the first substrate including a first layer of magnetic material; A package substrate disposed on the circuit board and having a second magnetic material layer having a polarity opposite to that of the first magnetic material layer with a face curved at a predetermined curvature, A semiconductor chip disposed on a package substrate; And a molding member covering an exposed region of the semiconductor chip and the package substrate.

Description

Semiconductor package module

The present application relates to package technology, and more particularly, to a semiconductor package module incorporating a magnetic material layer.

As electronic products become smaller and higher performance, portable electronic products increase, space for mounting semiconductor devices is further reduced, while functions required for electronic products are becoming more diverse. As a result, there is an increasing demand for a semiconductor memory having a small size and a large capacity. In addition, as interest in wearable electronics requiring mobility has increased, there has been a demand for a flexible characteristic capable of being bent in an electronic product, such as a function of warping or folding.

Semiconductor chips can be realized to have a thin thickness at a level that can be bent, but it is difficult to obtain flexible characteristics of package substrates on which semiconductor chips are arranged. Such a package substrate is mounted on a circuit board for connection to the outside. When the circuit board is warped or warped, tensile stress or compressive stress may be applied to the package substrate. Such stress causes the connection between the package substrate and the circuit board It will be cut off. If the electrical connection between the package substrate and the circuit board is lost, a problem may occur in the operation of the package, and further, reliability may be lost. Accordingly, there is a demand for a package structure capable of maintaining electrical connection with the package substrate even when the circuit board is bent or warped.

SUMMARY OF THE INVENTION The present invention provides a semiconductor package module structure capable of stably maintaining electrical connection between a package substrate and a circuit substrate.

According to an aspect of the present invention, there is provided a circuit board comprising: a circuit board including a first surface and a second surface opposite to the first surface, the first magnetic material layer embedded therein; A package substrate disposed on the circuit board and including a second magnetic material layer having a polarity opposite to that of the first magnetic material layer, the surface facing the circuit board being bent at a predetermined curvature; A semiconductor chip disposed on the package substrate; And a molding member covering an exposed region of the semiconductor chip and the package substrate.

In the present application, the first surface or the second surface of the circuit board is formed as a flat surface, and the circuit board may be formed of a flexible printed circuit board (PCB), an organic substrate, or an insulating substrate have.

The package substrate may have a flat surface on which the semiconductor chip is disposed, and the package substrate may include a rigid type printed circuit board.

The circuit board further includes a first substrate pad part on a first surface, and the package substrate further includes a contact metal film that contacts the first substrate pad part on a surface facing the circuit board.

The first substrate pad portion may include a plurality of dot patterns that are line-shaped or spaced apart from each other.

The first substrate pad portion or the contact metal film may include aluminum (Al) or copper.

The first magnetic material layer or the second magnetic material layer includes a permanent magnet or an electromagnet.

The permanent magnet may include a ceramic magnet which does not decrease the magnetic force even at a temperature of 300 to 460 degrees.

The ceramic magnet may be formed by mixing a single material of nickel (Ni), manganese (Mn), and cobalt (Co) or an oxide of nickel (Ni), manganese (Mn), and cobalt (Co) with iron.

The first magnetic material layer may be disposed in the form of a plate in a plane structure in the circuit board body portion.

The second magnetic material layer may be disposed in the form of a plate having a surface structure in the body portion of the package substrate.

The second magnetic material layer may be arranged in a line-shaped rim surrounding the outer frame portion of the body portion of the package substrate.

An EMI shielding film formed on an upper surface of the semiconductor chip; And a metal wire connecting the EMI shielding film and the circuit board.

The EMI shielding film may be formed of a metal film containing at least one of copper (Cu), silver (Ah), chrome (Cr), nickel (Ni), and gold (Au).

According to the embodiments of the present application, there is an advantage that a shape curved at a predetermined curvature is introduced into one surface of the package substrate to maintain electrical connection with another circuit substrate. As a result, the semiconductor chip can be prevented from being damaged by the force applied while the package substrate is bent.

In addition, the influence of the electromagnetic field can be controlled by introducing an EMI shielding film.

1 is a cross-sectional view illustrating a semiconductor package structure according to an embodiment of the present invention.
FIG. 2 is a perspective view showing the package substrate of FIG. 1; FIG.
3 is a view for explaining a stress relieving operation of the semiconductor package module according to an embodiment.
4 is a cross-sectional view illustrating a semiconductor package structure according to another embodiment.

The embodiments of the present application are illustrated and described in the drawings, which are intended to illustrate what is being suggested by the present application and are not intended to limit what is presented in the present application in a detailed form.

Like reference numerals refer to like elements throughout the specification. Accordingly, although the same reference numerals or similar reference numerals are not mentioned or described in the drawings, they may be described with reference to other drawings. Further, even if the reference numerals are not shown, they can be described with reference to other drawings.

 1 is a cross-sectional view illustrating a semiconductor package structure according to an embodiment of the present invention. FIG. 2 is a perspective view showing the package substrate of FIG. 1; FIG. FIGS. 3 and 4 are diagrams for explaining the stress relieving action of the semiconductor package module according to one embodiment.

1, a semiconductor package module 1000 according to an embodiment of the present invention includes a circuit board 100 in which a first magnetic material layer 115 is embedded and a circuit board 100 in which a second magnetic material layer 215 is embedded A package substrate 200, a semiconductor chip 220 disposed on the package substrate 200, and a molding member 235 covering the semiconductor chip 220.

The circuit board 100 includes a body 105 and is provided with a first surface 105a and a plate member including a second surface 105b opposite the first surface 105a . Each surface of the first surface 105a or the second surface 105b of the circuit board 300 may be formed to have a flat surface before stress from the outside. The circuit board 100 may include a printed circuit board (PCB), an organic substrate, or an insulating substrate. When the circuit board 100 is formed as a printed circuit board (PCB), a flexible type printed circuit board can be used. In the case where the circuit board 100 is formed of an organic substrate, it may include an organic material that can be bent. In one example, the organic material has an elastic modulus of 2.93 MPa to 3.73 MPa at room temperature, And at least one material selected from the group consisting of polymer resins, epoxy resins, or plastics having a modulus of elasticity of 0.82 MPa to 3.27 MPa at a temperature. The body portion 105 of the circuit board 100 may have a structure in which thin film layers including the above-described organic materials are stacked. When the circuit board 100 is formed of an insulating substrate, it may include an insulating material that can be bent. In one example, the insulating material has an elastic modulus of 19835.2 to 25244.8 Mpa at room temperature, and 200 Lt; RTI ID = 0.0 > mPa < / RTI > to 1254.4 Mpa.

The first substrate pad portion 110 may be disposed on the first surface 105a of the circuit board 100. [ The first substrate pad unit 110 electrically connects the circuit board 100 and the package substrate 200. The first substrate pad unit 110 may include aluminum (Al) or copper (Cu). The first substrate pad part 110 may be arranged in a line shape or a plurality of dot shaped patterns may be arranged on the center axis C1 of the semiconductor package module 1000 And may be spaced apart from each other up to the edge of the circuit board 100.

The first magnetic material layer 115 may be disposed inside the body 105 of the circuit board 100. The first magnetic material layer 115 may be composed of a material having magnetism. The first magnetic material layer 115 may comprise a permanent magnet. The permanent magnet may include a ceramic magnet that does not decrease its magnetic force even at a temperature of 300 to 460 degrees. In one example, the ceramic magnet is formed by mixing a single material of nickel (Ni), manganese (Mn), cobalt (Co) or an oxide of iron (Ni), manganese (Mn) . In addition, the first magnetic material layer 115 may include an electromagnet that is magnetized when an electric current flows and returns to an original state that is not magnetized when an electric current is interrupted. In the case where the first magnetic material layer 115 is formed of electromagnets, a power source for magnetizing the first magnetic material layer 115 by applying current to the first magnetic material layer 115 includes a first magnetic material layer 115, Can be connected. The first magnetic material layer 115 may be disposed in the form of a sheet within the body 105 of the circuit board 100, but is not limited thereto. In one example, the first magnetic material layer 115 may be formed to have at least the same area as the area on the horizontal plane of the package substrate 200 disposed on the top.

A package substrate 200 in which a second magnetic material layer is embedded may be disposed on the circuit board 100. The package substrate 200 may be provided with a plate member including a body portion 205 and including a first surface 205a and a second surface 205b opposite to the first surface 205a . The first surface 205a of the package substrate 200 may be formed to have a flat surface and the second surface 205b may be formed to be curved with a predetermined curvature. The package substrate 200 may include a printed circuit board (PCB). When a package substrate 200 is introduced into a printed circuit board, a rigid type substrate can be introduced. Referring to FIG. 1 again, the package substrate 200 may be bent in the Y-axis direction that is the vertical direction of the package substrate 200 toward the edge with respect to the center axis C1 of the semiconductor package module 1000. Accordingly, the package substrate 200 and the circuit board 100 can be disposed with a predetermined gap G1 and G2 between them. As the curvature of the package substrate 200 gradually increases toward the edge portion, the first gap G1 disposed at the edge portion is longer than the second gap G2, which is relatively closer to the central axis C1. As shown in FIG.

A second substrate pad portion 217 may be disposed on the first surface 205a of the package substrate 200. [ The second substrate pad portion 217 electrically connects the semiconductor chip 220 disposed on the package substrate 200 to the package substrate 200. The second substrate pad portion 217 may include aluminum (Al) or copper (Cu).

A contact metal layer 210 may be disposed on the second surface 205b of the package substrate 200. [ The contact metal layer 210 is in contact with the first substrate pad portion 110 of the circuit board 100 and electrically connects the first and second substrate pad portions 110 and 110. The contact metal layer 210 may be composed of aluminum (Al) or copper (Cu). The contact metal layer 210 may be formed on the second surface 205b of the package substrate 200 in a sheet form. The second surface 205b of the package substrate 200 is formed to be bent at a predetermined curvature so that the contact metal layer 210 may be formed to be bent along the shape of the second surface 205b of the package substrate 200 .

The second magnetic material layer 215 may be disposed inside the body portion 205 of the package substrate 200. The second magnetic material layer 215 may be disposed between the contact metal layer 210 formed on the second surface 205b of the package substrate 200 and the first surface 205a of the package substrate 200. [ The second magnetic material layer 215 may comprise a material having magnetism. The second magnetic material layer 215 may comprise a permanent magnet or an electromagnet. When the second magnetic material layer 215 is formed of a permanent magnet, it may include a ceramic magnet that does not decrease its magnetic force even at a temperature of 300 to 460 degrees. In one example, the ceramic magnet is formed by mixing a single material of nickel (Ni), manganese (Mn), cobalt (Co) or an oxide of iron (Ni), manganese (Mn) . When the second magnetic material layer 215 is formed of electromagnets, a power source for magnetizing the second magnetic material layer 215 by applying current to the second magnetic material layer 215 is formed of a second magnetic material layer 215, Can be connected. Here, the second magnetic material layer 215 may have a polarity opposite to that of the first magnetic material layer 115.

The second magnetic material layer 215 may be disposed in a sheet shape inside the body portion 205 of the package substrate 200. In one example, the second magnetic material layer 215 may be formed in a plate shape having an area at least equal to the area on the horizontal plane of the package substrate 200. The second magnetic material layer 215 is also bent along the shape of the second surface 205b of the package substrate 200 because the second surface 205b of the package substrate 200 is curved at a predetermined curvature, .

The semiconductor chip 220 is disposed on the first surface 205a of the package substrate 205. [ Active devices such as transistors are formed in the semiconductor chip 220, and passive elements such as capacitors, resistors, and the like may be formed in some cases. The semiconductor chip 220 may include a front side 220a which may be an active layer in which active elements are formed and a back side 220b opposite to the front side 220a. A plurality of connection pad portions 225 are disposed on the front surface portion 220a of the semiconductor chip 220. The connection pad portions 225 are arranged on the front surface portion 220a of the semiconductor chip 220. The connection pad portions 225 adjacent to each other in the respective rows may be spaced apart from each other by a predetermined distance. The connection pad portion 225 of the semiconductor chip 220 may be connected to the second substrate pad portion 217 of the package substrate 205 via the connection terminal 230. [

The exposed region of the first surface 205a of the package substrate 200 including the semiconductor chip 220 may be covered with the molding member 235. [ The molding member 235 includes an insulating material such as an epoxy molding compound (EMC). The space between the connection pad portion 225 of the semiconductor chip 220 and the connection terminal 230 and the second substrate pad portion 217 of the package substrate 200 is separated from the molding member 235 by a separate underfill ).

Referring to FIG. 3, which is a sectional view for explaining the stress relieving action of the semiconductor package according to an embodiment of the present invention, a magnetic field is generated on the first magnetic material layer 115 or the second magnetic material layer 215. Here, when the first or second magnetic material layer 115 or 215 is formed of an electromagnet, a magnetic field may be generated by flowing a current through a power source (not shown). The second magnetic material layer 215 disposed inside the body portion 205 of the package substrate 200 and the first magnetic material layer 115 disposed inside the body portion 105 of the circuit board 100 A magnetic force is generated in the first direction F1 by the interaction. Here, the first direction M1 is the direction in which the semiconductor chip 220 is disposed. When a magnetic force is applied in the first direction F1, a pulling force is generated between the second magnetic material layer 215 and the second magnetic material layer 215 having the opposite polarity to the first magnetic material layer 115, And is deflected in the direction F1. When the circuit board 100 is bent, the first surface 105a of the circuit board 100 can be brought into close contact with the second surface 205b of the package substrate 200 along the curved shape. The circuit board 100 is contacted with the second surface 205b of the package substrate 200 along the curved shape so that not only the first substrate pad portion 110 disposed at the center portion of the circuit board 100 but also the circuit board 100 May be in contact with the contact metal layer 210 of the package substrate 200. In this case, As a result, it is possible to stably maintain the electrical connection with the package substrate 200 while the circuit board 100 can be bent or turned.

4 is a cross-sectional view illustrating a semiconductor package structure according to another embodiment.

4, a semiconductor package module 2000 according to another embodiment includes a circuit board 300 having a first magnetic material layer 315 embedded therein, a package substrate 300 having a second magnetic material layer 415 therein A semiconductor chip 420 disposed on the package substrate 400 and an electromagnetic interference shielding film 440 formed on the molding member 435 and the molding member 435.

The circuit board 300 includes a body portion 305 and may be provided with a plate member including a first surface 305a and a second surface 305b opposite to the first surface 305a . The respective surfaces of the first surface 305a or the second surface 305b of the circuit board 300 may be formed to have a flat surface before stress is applied from the outside. The circuit board 300 may include a printed circuit board (PCB), an organic substrate, or an insulating substrate. When the circuit board 300 is formed as a printed circuit board (PCB), a flexible type printed circuit board can be used. In the case where the circuit board 300 is formed of an organic substrate, it may include an organic material that can be bent. In one example, the organic material has a modulus of elasticity of 2.93 MPa to 3.73 MPa at room temperature, And at least one material selected from the group consisting of polymer resins, epoxy resins, or plastics having a modulus of elasticity of 0.82 MPa to 3.27 MPa at a temperature. The body portion 305 of the circuit board 300 may have a structure in which thin film layers including the above-described organic materials are stacked. In addition, when the circuit board 300 is formed of an insulating substrate, it may include an insulating material that can be bent. In one example, the insulating material has an elastic modulus of 19835.2 to 25244.8 Mpa at room temperature, Lt; RTI ID = 0.0 > mPa < / RTI > to 1254.4 Mpa.

The first substrate pad portion 310 may be disposed on the first surface 305a of the circuit board 300. [ The first substrate pad portion 310 may be arranged such that a plurality of dot-shaped patterns 310a, 310b, 310c, 310d, and 310e are spaced apart from each other by a predetermined distance in the central portion of the circuit board 300. [ Also, the first substrate pad unit 310 may be arranged in a line shape, though not shown in the drawing. The first substrate pad part 310 may include aluminum (Al) or copper (Cu).

The first magnetic material layer 315 may be disposed inside the body 305 of the circuit board 300. The first magnetic material layer 315 may comprise a material having magnetism. The first magnetic material layer 315 may include permanent magnets and may include ceramic magnets that do not decrease in magnetic force, for example, at temperatures between 300 and 460 degrees. In one example, the ceramic magnet is formed by mixing a single material of nickel (Ni), manganese (Mn), cobalt (Co) or an oxide of iron (Ni), manganese (Mn) . In addition, the first magnetic material layer 315 may comprise electromagnets. In the case where the first magnetic material layer 315 is formed of electromagnets, a power source for magnetizing the first magnetic material layer 315 by applying current to the first magnetic material layer 315 includes a first magnetic material layer 315, Can be connected. The first magnetic material layer 315 may be disposed in the form of a sheet within the body 305 of the circuit board 300, but is not limited thereto. In one example, the first magnetic material layer 315 may be formed to have at least the same area as the area of the package substrate 400 disposed thereon.

A package substrate 400 having a second magnetic material layer 415 embedded therein may be disposed on the circuit board 300. The package substrate 400 may include a body portion 405 and may be a plate member including a first surface 405a and a second surface 405b facing the first surface 405a. The first surface 405a of the package substrate 400 may be formed to have a flat surface and the second surface 405b may be formed to be curved with a predetermined curvature. The package substrate 400 may include a rigid type printed circuit board (PCB).

The package substrate 400 may be bent in the Y axis direction which is the vertical direction of the package substrate 400 toward the edge portion with respect to the central axis C2 of the semiconductor package module 2000. [ Accordingly, the package substrate 400 and the circuit board 300 can be disposed with a predetermined gap G3 and G4 between them. Here, the first gap G3 disposed at the edge portion is longer than the second gap G4, which is relatively closer to the center axis C2, as the degree of bending gradually increases toward the edge portion of the package substrate 400 As shown in FIG. A second substrate pad portion 417 including aluminum (Al) or copper (Cu) may be disposed on the first surface 405a of the package substrate 400. [ The second substrate pad portion 417 serves to electrically connect the semiconductor chip 420 and the package substrate 400.

A contact metal layer 410 may be disposed on the second surface 405b of the package substrate 400. [ The contact metal layer 410 is in contact with the first substrate pad 310 of the circuit board 300 to electrically connect to the first substrate pad 310. The contact metal layer 410 may be composed of aluminum (Al) or copper (Cu). The contact metal layer 410 may be formed on the second surface 405b of the package substrate 400 in a sheet shape. Since the second surface 405b of the package substrate 400 is formed to be bent at a predetermined curvature, the contact metal layer 410 may also be formed to be bent along the shape of the second surface 405b of the package substrate 400 .

The second magnetic material layer 415 may be disposed in the body portion 405 of the package substrate 400. The second magnetic material layer 415 may be disposed within the body portion 405 between the contact metal layer 410 and the first surface 405a of the package substrate 400. [ The second magnetic material layer 415 may comprise a material having magnetic properties. The second magnetic material layer 415 may comprise a permanent magnet or an electromagnet. When the second magnetic material layer 415 is formed of a permanent magnet, it may include a ceramic magnet that does not decrease its magnetic force even at a temperature of 300 to 460 degrees. In one example, the ceramic magnet is formed by mixing a single material of nickel (Ni), manganese (Mn), cobalt (Co) or an oxide of iron (Ni), manganese (Mn) . Here, the second magnetic material layer 415 may have a polarity opposite to that of the first magnetic material layer 315.

The second magnetic material layer 415 may be disposed in a sheet form inside the body portion 405 of the package substrate 400. In one example, the second magnetic material layer 415 may be formed in a plate shape having an area at least equal to the area on the horizontal plane of the package substrate 400. Since the second surface 405b of the package substrate 400 is formed to be bent at a predetermined curvature, the re-magnetic material layer 415 is also bent along the shape of the second surface 405b of the package substrate 400 .

The semiconductor chip 420 is disposed on the first surface 405a of the package substrate 405. [ The semiconductor chip 420 may include a front portion 420a that may be an active layer in which active elements are formed and a rear portion 420b that faces the front portion 420a. A plurality of connection pad portions 425 are disposed on the front surface portion 420a of the semiconductor chip 420. [ The connection pad portions 425 are arranged on the front portion 420a of the semiconductor chip 420 and the adjacent connection pad portions 425 in the respective rows may be spaced apart from each other by a predetermined distance. The connection pad portion 425 of the semiconductor chip 420 may be connected to the second substrate pad portion 417 of the package substrate 400 through the connection terminal 430. [

The exposed area of the semiconductor chip 420 and the first surface 405a of the package substrate 400 may be covered with the molding member 435. [ The molding member 435 comprises an insulating material such as an epoxy molding compound (EMC). The space between the connection pad portion 425 of the semiconductor chip 420 and the connection terminal 430 and the second substrate pad portion 417 of the package substrate 400 is separated from the molding member 435 by a separate underfill ).

An EMI shielding film 440 may be disposed on the molding member 435. The EMI shielding film 440 prevents the influence of an electric field from being exerted on the semiconductor chip 420 disposed inside the molding member 435 or prevents the influence of an electromagnetic field generated by the semiconductor chip 420 on the outside . The EMI shielding film 440 may be formed of a metal film. The metal film that can be applied to the EMI shielding film 440 may include at least one of copper (Cu), silver (Ah), chromium (Cr), nickel (Ni), and gold (Au). The EMI shielding film 440 is connected to the circuit board 300 through the metal wire 450 to block the EMI. One end of the metal wire 450 may be connected to the first contact 452 disposed on the EMI shielding film 440 and the other end may be connected to the second contact 313 on the circuit board 300 .

The semiconductor package module 200 according to another embodiment of the present invention generates magnetic force on the first or second magnetic material layers 314 and 415 to stabilize the electrical connection between the circuit board 300 and the package substrate 400 . In addition, it is possible to control the influence of the electromagnetic field by introducing the EMI shielding film 440.

1000, 2000: semiconductor package module
100, 300: circuit board 110, 310: first substrate pad part
115, 315: first magnetic material layer 200, 400: package substrate
215, 415: second magnetic material layer 235, 435: molding member

Claims (16)

A circuit board including a first magnetic material layer including a first surface and a second surface opposite to the first surface;
A package substrate disposed on the circuit board and including a second magnetic material layer having a polarity opposite to that of the first magnetic material layer, the surface of the package substrate facing the circuit board having a predetermined curvature;
A semiconductor chip disposed on the package substrate; And
And a molding member covering an exposed region of the semiconductor chip and the package substrate. The method according to claim 1,
Wherein a first surface or a second surface of the circuit board is formed as a flat surface. The method according to claim 1,
The circuit board is formed of a flexible printed circuit board (PCB), an organic substrate, or an insulating substrate. The method according to claim 1,
Wherein the package substrate has a flat surface on which the semiconductor chip is disposed. The method according to claim 1,
Wherein the package substrate comprises a rigid type printed circuit board. The method according to claim 1,
Wherein the circuit board further comprises a first substrate pad portion on a first side,
Wherein the package substrate further comprises a contact metal film that contacts the first substrate pad portion on a surface facing the circuit board. The method according to claim 6,
Wherein the first substrate pad portion includes a plurality of dots in a line shape or spaced apart from each other. The method according to claim 6,
Wherein the first substrate pad portion or the contact metal film includes aluminum (Al) or copper. The method according to claim 1,
Wherein the first magnetic material layer or the second magnetic material layer comprises a permanent magnet or an electromagnet. 10. The method of claim 9,
Wherein the permanent magnet includes a ceramic magnet which does not decrease its magnetic force even at a temperature of 300 to 460 degrees. 11. The method of claim 10,
The ceramic magnet is formed by mixing a single material of nickel (Ni), manganese (Mn), and cobalt (Co) or an oxide of nickel (Ni), manganese (Mn), and cobalt (Co) with iron. The method according to claim 1,
Wherein the first magnetic material layer is disposed in a plate shape in a plane structure in the circuit board body portion. The method according to claim 1,
And the second magnetic material layer is disposed in a plate shape in a plane structure in a body portion of the package substrate. The method according to claim 1,
And the second magnetic material layer is arranged in a line-shaped rim surrounding the outer portion of the body portion of the package substrate. The method according to claim 1,
An EMI shielding film formed on an upper surface of the semiconductor chip; And
And a metal wire connecting the EMI shielding film and the circuit board. 16. The method of claim 15,
Wherein the EMI shielding film is formed of a metal film containing at least one of copper (Cu), silver (Ah), chromium (Cr), nickel (Ni), and gold (Au).
KR1020150047755A 2015-04-03 2015-04-03 Semiconductor package module KR20160119411A (en)

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CN113380723A (en) * 2021-04-29 2021-09-10 苏州通富超威半导体有限公司 Packaging structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113380723A (en) * 2021-04-29 2021-09-10 苏州通富超威半导体有限公司 Packaging structure

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