KR20160115076A - BaSnO3 thin film transistor with high field-effect mobility and producing method thereof - Google Patents
BaSnO3 thin film transistor with high field-effect mobility and producing method thereof Download PDFInfo
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- KR20160115076A KR20160115076A KR1020150041803A KR20150041803A KR20160115076A KR 20160115076 A KR20160115076 A KR 20160115076A KR 1020150041803 A KR1020150041803 A KR 1020150041803A KR 20150041803 A KR20150041803 A KR 20150041803A KR 20160115076 A KR20160115076 A KR 20160115076A
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- 239000010409 thin film Substances 0.000 title claims abstract description 106
- 238000000034 method Methods 0.000 title claims description 57
- 230000005669 field effect Effects 0.000 title description 13
- 229910002929 BaSnO3 Inorganic materials 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 229910052788 barium Inorganic materials 0.000 claims abstract description 38
- 239000012535 impurity Substances 0.000 claims abstract description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000001301 oxygen Substances 0.000 claims abstract description 13
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 13
- 229940071182 stannate Drugs 0.000 claims abstract description 13
- 239000013078 crystal Substances 0.000 claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims description 51
- 239000010408 film Substances 0.000 claims description 29
- 229910052746 lanthanum Inorganic materials 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 26
- 230000008021 deposition Effects 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 25
- 229910052737 gold Inorganic materials 0.000 claims description 20
- 238000004544 sputter deposition Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 12
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 229910052787 antimony Inorganic materials 0.000 claims description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 7
- 229910002367 SrTiO Inorganic materials 0.000 claims description 7
- 238000000206 photolithography Methods 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 206010021143 Hypoxia Diseases 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 4
- 238000000427 thin-film deposition Methods 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 230000002950 deficient Effects 0.000 abstract description 4
- 239000004020 conductor Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 4
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000003917 TEM image Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/78654—Monocrystalline silicon transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13069—Thin film transistor [TFT]
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Abstract
Description
The present invention relates to a transparent transistor based on barium stannate (BaSnO 3 ) which can be applied as a logic circuit or an electrical switch in an electronic device based on a transparent conducting oxide, and a method of manufacturing the same.
Although the band gap of a large number of oxide semiconductors is larger than that of silicon (Si), if the chemical potential is controlled by injecting a donor impurity to form a field effect transistor structure, By applying a voltage to the gate, the current of the channel made of the oxide semiconductor can be controlled.
ZnO, In 2 O 3 , SnO 2 and In-Zn-Ga-O composite materials have been reported as typical channel materials in the manufacture of transparent oxide semiconductor transistors. In the case of an n- type transistor using these materials, the field-effect mobility is 10 to 80 cm 2 V -1 s -1 and exhibits relatively excellent electrical characteristics. However, ZnO has a disadvantage that its electrical properties can easily be changed by oxygen vacancy or hydrogen, and an oxide based on In needs a substitute material in terms of price due to a shortage of indium (In) element. In the case of SnO 2 , there is a disadvantage that it is difficult to find an appropriate etching material in the etching process. In the case of conventional perovskite (perovskite) oxide-based transistors (representatively, SrTiO 3, CaTiO 3) temperature field-effect mobility is very low at less than 3 cm 2 V -1 s -1.
BaSnO 3, which is transparent in visible light region and exhibits thermal stability with high electron mobility, is emerging as a material capable of solving these problems. A study for forming a transistor by using it as a channel material However, there is no report on an optimized type of transparent transistor in which BaSnO 3 exhibits excellent electrical characteristics as a channel material.
The present invention seeks to provide a barium stannate (BaSnO 3 ) thin film-based transistor that can be applied as a logic circuit or an electrical switch in an electronic device based on a transparent oxide semiconductor, and a method of manufacturing the same. In particular, the present invention seeks to provide epitaxial or homo-epitaxial barium sulphate (BaSnO 3 ) thin film based transistors and methods of making same.
In order to solve the above problems, the present invention provides an n- type (oxygen deficient or impurity implanted) barium stannate oxide thin film having no structured defect due to deposition of a stacking thin film in a c -axis direction on a substrate; Source / drain electrodes on the thin film; A gate insulating film on the electrodes; And a gate electrode on the gate insulating layer, wherein the substrate is a single crystal material having a lattice constant of about 3.8-4.2 A when viewed in a cubic structure.
According to a preferred embodiment of the present invention, the substrate is preferably selected from the group consisting of BaSnO 3, LaInO 3, SrTiO 3 ,
According to another preferred embodiment of the present invention, in order to have a high field effect mobility, the substrate is made of BaSnO 3 , and the barium stannate oxide thin film is preferably deposited by homogeneous deposition.
According to another preferred embodiment of the present invention, the barium stannate thin film may be a polycrystalline thin film or an amorphous thin film.
According to another preferred embodiment of the present invention, the impurity in the barium stannate oxide thin film doped with impurities is preferably lanthanum (La) or antimony (Sb).
According to another preferred embodiment of the present invention, the concentration of oxygen deficiency or impurities in the barium stannate oxide thin film doped with oxygen deficiency or impurities is preferably greater than 0 wt% to 10 wt% based on the total weight of barium stannate.
According to another preferred embodiment of the present invention, the source / drain electrode and the gate electrode it is preferably made of Au, Ti + Au, Ni, ITO, or (Ba, La) SnO 3 -δ .
According to another preferred embodiment of the present invention, it is preferable that the gate insulating film is made of Al 2 O 3 , HfO 2 , ZrO 2 , or LaInO 3 .
The present invention also relates to a method of forming a BaSnO 3 thin film on a substrate using c -axis deposition; Forming a source / drain electrode on the BaSnO 3 thin film channel; Forming a gate insulating film on the substrate; And forming a gate electrode on the gate insulating film.
According to a preferred embodiment of the present invention, the substrate is preferably made of a single crystal material having a lattice constant of about 3.8-4.2 A when viewed as a cubic structure.
According to another preferred embodiment of the present invention, the substrate is preferably made of a material selected from the group consisting of BaSnO 3, LaInO 3, SrTiO 3 ,
According to another preferred embodiment of the present invention, the BaSnO 3 channel is formed by depositing an n- type layer formed by using BaSnO 3 -δ , (Ba, La) SnO 3 -δ or Ba (Sn, Sb) SnO 3- It is preferably a BaSnO 3 thin film.
According to another preferred embodiment of the present invention, the deposition of the BaSnO 3 thin film is preferably performed by a pulse laser deposition method, a sputtering method, or a chemical vapor deposition method.
According to another preferred embodiment of the present invention, the BaSnO 3 thin film may be deposited as a pile-up or a uniformly-deposited thin film, and the deposition is preferably performed at a substrate temperature of 700 to 1000 ° C and an oxygen partial pressure of 1 to 200 mTorr .
According to another preferred embodiment of the present invention, the BaSnO 3 thin film can be deposited as a polycrystalline or amorphous thin film, and the deposition conditions are preferably a substrate temperature of 20 to 800 ° C and an oxygen partial pressure of 1 to 200 mTorr.
According to another preferred embodiment of the present invention, BaSnO 3 thin film channel, BaSnO can 3 formed by using a shadow mask at the time of film deposition, or can be formed using a photolithography process and an etching process after BaSnO 3 Thin Film Deposition . According to another preferred embodiment of the present invention, the etching process of the BaSnO 3 thin film is preferably a wet etching process using nitric acid or hydrochloric acid.
According to another preferred embodiment of the invention, the source / drain electrodes may be formed by depositing an Au, Au + Ti, Ni, ITO, or (Ba, La) SnO 3 -δ .
According to another preferred embodiment of the present invention, the gate insulating film may be formed of any one of Al 2 O 3 , HfO 2 , ZrO 2 , or LaInO 3 by atomic layer deposition, sputtering, It is preferable to form it by using.
According to another preferred embodiment of the present invention, the gate electrode is preferably formed by depositing an Au, Au + Ti, Ni, ITO, or (Ba, La) SnO 3 -δ .
According to the present invention, a transparent oxide semiconductor transistor having high reliability and excellent electrical characteristics can be realized by using BaSnO 3 , which is a transparent oxide semiconductor material, as a channel without containing indium (In). In particular, when BaSnO 3 is used as a uniformly deposited thin-film channel, a field-effect mobility of 30 to 50 cm 2 V -1 s -1 is obtained, and a thermally stable transparent transistor having excellent electrical characteristics can be realized.
In addition, by controlling the impurity concentration of the n- type BaSnO 3 thin film, a transistor having a positive threshold voltage and a negative transistor can be fabricated. Therefore, a reliable oxide semiconductor circuit can be realized.
When the transparent electrode is used as a source, a drain, and a gate electrode, it can be applied to transparent electronic devices and transistors of various displays.
1 is a cross-sectional view illustrating a structure of a transistor using an n- type BaSnO 3 thin film as a channel according to an embodiment of the present invention.
2 is a process flow diagram illustrating a cross-sectional view of a transistor structure according to an embodiment of the present invention.
FIG. 3 is a TEM image of a BaSnO 3 thin film formed on a substrate by cobalt deposition in the c -axis direction. FIG. 3 (a) shows a bright field image of TEM for the entire thin film region And FIG. 3 (b) shows a high-resolution TEM image near the boundary between the substrate and the thin film.
Figure 4 is a graph showing a change of a drain current corresponding to the actual implementation, when a gate voltage of a transistor manufactured in accordance with an embodiment of the invention, Fig. 4 (a) is that the threshold voltage is BaSnO 3 -δ thin film formed by the assignee channel transistor FIG. 4 (b) shows a transistor in which a BaSnO 3 -δ 90 nm thin film + (Ba, La)
Hereinafter, the present invention will be described in detail with reference to the drawings and examples. In describing the present invention, a detailed description of related processes or configurations will be omitted so as not to obscure the gist of the present invention.
1 is a cross-sectional view illustrating a transistor structure according to an embodiment of the present invention. 1, a
The BaSnO 3
The n- type BaSnO 3 (BaSnO 3 ) 3 constituting the BaSnO 3
The n- type BaSnO 3 (BaSnO 3 ) 3 constituting the BaSnO 3
BaSnO 3
The source /
The
Next, a method of manufacturing a transistor according to another aspect of the present invention will be described. A method of fabricating a transistor of the present invention includes forming a BaSnO 3 stacked thin film channel on a substrate; And forming source / drain electrodes, a gate insulating film, and a gate electrode on the substrate.
2 is a process flow diagram illustrating a cross-sectional view of a transistor structure according to an embodiment of the present invention. A method of manufacturing a transistor according to the present invention will be described in detail with reference to FIG.
For the c -axis deposition of the BaSnO 3 thin film, the
The BaSnO 3
The BaSnO 3
When the BaSnO 3 thin film is deposited by a sputtering method or a homogenous deposition method, it is preferable to perform the deposition at a substrate temperature of 700 to 1000 ° C. and an oxygen partial pressure of 1 to 200 mTorr. When the BaSnO 3 thin film is deposited as a polycrystalline or amorphous thin film, the deposition conditions are a substrate temperature of 20 to 800 ° C, an oxygen It is preferable that the partial pressure is 1 to 200 mTorr. If this condition is not satisfied, the thin film is not formed well and the electric field mobility suitable for the channel can not be obtained, which is not preferable.
The BaSnO 3
Step 2 is a step of forming the desired thin film BaSnO 3 The source / drain electrode on the (200) (301a, 301b, 302a, 302b) is a channel formed in the form of. It is possible to form the source /
The source / drain electrode may be formed of an electrically conductive material such as Au, Ti + Au, Ni, ITO or (Ba, La) SnO 3 -δ . In step 2, .
For the deposition of the source / drain electrodes, an evaporator or a sputter can be used for a metal, and a pulse laser deposition method or a sputtering method for ITO or (Ba, La) SnO 3 -δ can be used. Transparent electrical conductors such as ITO and (Ba, La) SnO 3 -δ can be used for the implementation of transparent devices.
Step 4 is a step of forming the
The position of the
In order to secure the electrode connection, the dielectric material of the gate insulating film deposited on the source / drain electrode is etched.
Hereinafter, the present invention will be described in more detail by way of examples, but it should be understood that the present invention is not limited thereto and various modifications and changes may be made by those skilled in the art.
Example
Step 1: On the substrate, BaSnO 3 Thin film channel formation
BaSnO 3 By pulsed laser deposition on the single crystal substrate (100), BaSnO 3, (Ba, La) -δ SnO 3, Ba (Sn, Sb) SnO 3-δ Building on the same kind by using the n-type polycrystalline each target BaSnO 3 Thereby forming a
A n- type BaSnO 3 thin film (200) was deposited using a shadow mask at a thickness of 90 nm, or deposited without a shadow mask, and then photolithography was performed to remove a portion to be used as a channel, followed by etching with nitric acid and hydrochloric acid to remove unnecessary portions Respectively.
A TEM image of a thin film deposited in the c -axis direction using a BaSnO 3 target on a substrate is shown in FIG. FIG. 3 (a) shows the TEM bright field over the whole area of the thin film, showing that the thin film was uniformly stacked in the [001] direction and well formed without any other structural defects. FIG. 3 (b) shows a high-resolution TEM image near the boundary between the substrate and the thin film, which shows almost perfectly the same structure at the interface with the thin film deposited in the [001] direction of the substrate.
Step 2: Source / drain electrode formation
Ti was deposited to a thickness of 5 nm on the n- type BaSnO 3
Step 3: Gate insulating film formation
A
Step 4: Gate electrode formation
Au was deposited on the
After the formation of the
Characteristic evaluation of transistor:
Figure 4 is a graph showing a change of a drain current corresponding to the gate voltage in the actual implementation of a transistor made in accordance with the embodiment, FIG. 4 (a) is a channel BaSnO 3 -δ thin film of 90 nm thick n-type thin film BaSnO 3 (Μ FE ) of 30.4 cm 2 V -1 s -1 , and the current ratio I on / I off > 10 4 . FIG. 4 (b) shows a case in which a transistor having a negative threshold voltage is formed by depositing a BaSnO 3 -δ 90 nm thin film + (Ba, La)
An n- type transistor implementation in which the threshold voltage is positive and negative is the basis for building an inverter circuit.
1: transistor
100: substrate
200: BaSnO 3 Thin film layer
301a, 301b, 302a, and 302b: source / drain electrodes
400: gate insulating film
500: gate electrode
Claims (20)
Source / drain electrodes on the thin film;
A gate insulating film on the electrodes; And
And a gate electrode on the gate insulating film,
Wherein the substrate is made of a single crystal material having a structure with a lattice constant of 3.8-4.2 A when viewed in a cubic structure.
The substrate is BaSnO 3, LaInO 3, SrTiO 3 , PrInO 3, KTaO 3, Pb (Zr, Ti) O 3 and a transistor made of a material selected from the group consisting of MgO.
Wherein the substrate is made of BaSnO 3 , and the barium stannate transparent oxide semiconductor thin film is a uniformly deposited thin film.
Wherein the barium stannate thin film is a polycrystalline or amorphous thin film.
Wherein the n- type is implanted with oxygen deficiency, or lanthanum (La) or antimony (Sb) as a core impurity.
Wherein the concentration of the oxygen depletion or host impurity is greater than 0 wt% to 10 wt% based on the total weight of the barium stannate.
Wherein the source / drain electrodes and the gate electrode are made of Au, Ti + Au, Ni, ITO, or (Ba, La) SnO3 -delta .
Wherein the gate insulating film is made of Al 2 O 3 , HfO 2 , ZrO 2 , or LaInO 3 .
Forming a source / drain electrode on the BaSnO 3 thin film channel;
Forming a gate insulating film on the substrate; And
And forming a gate electrode on the gate insulating film.
Wherein the substrate is made of a single crystal material having a lattice constant of 3.8-4.2 A in a cubic structure.
The substrate is BaSnO 3, LaInO 3, SrTiO 3 , PrInO 3, KTaO 3, Pb process for producing a (Zr, Ti) O 3 and MgO transistor made of a material selected from the group consisting of.
Wherein the BaSnO 3 thin film channel is an n- type BaSnO 3 thin film formed by depositing BaSnO 3 -δ , (Ba, La) SnO 3 -δ or Ba (Sn, Sb) SnO 3 -δ . Gt;
Wherein the deposition is performed by a pulse laser deposition method, a sputtering method, or a chemical vapor deposition method.
Wherein the BaSnO 3 thin-film channel can be deposited as a pile-up or a uniform-pile thin film, and the deposition is performed at a substrate temperature of 700 to 1000 ° C and an oxygen partial pressure of 1 to 200 mTorr.
Wherein the BaSnO 3 thin film channel can be deposited as a polycrystalline or amorphous thin film and the deposition is performed at a substrate temperature of 20 to 800 ° C and an oxygen partial pressure of 1 to 200 mTorr.
Wherein the BaSnO 3 thin film channel is formed by using a shadow mask during the BaSnO 3 thin film deposition or by a photolithography process and an etching process after the BaSnO 3 thin film deposition.
Wherein the etching process is a wet etching process using nitric acid or hydrochloric acid.
The source / drain electrodes are Au, Ti + Au, Ni, ITO, or (Ba, La) method of manufacturing a transistor, characterized in that is formed by depositing a SnO 3 -δ.
Wherein the gate insulating film is formed by using Al 2 O 3 , HfO 2 , ZrO 2 , or LaInO 3 using an atomic layer deposition method, a sputtering method, a chemical vapor deposition method, or a pulse laser deposition method.
The gate electrode production method for the transistor, characterized in that is formed by depositing Au, Ti + Au, Ni, ITO, or (Ba, La) SnO 3 -δ .
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150041803A KR20160115076A (en) | 2015-03-25 | 2015-03-25 | BaSnO3 thin film transistor with high field-effect mobility and producing method thereof |
| PCT/KR2016/001329 WO2016153172A1 (en) | 2015-03-25 | 2016-02-05 | Basno3 thin film transistor having high field-effect mobility, and manufacturing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150041803A KR20160115076A (en) | 2015-03-25 | 2015-03-25 | BaSnO3 thin film transistor with high field-effect mobility and producing method thereof |
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| KR20160115076A true KR20160115076A (en) | 2016-10-06 |
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| WO (1) | WO2016153172A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021049686A1 (en) * | 2019-09-11 | 2021-03-18 | 서울대학교산학협력단 | Two-dimensional electron gas at interface between basno3 and laino3 |
| US11624109B2 (en) | 2017-12-22 | 2023-04-11 | Lg Chem, Ltd. | Method for manufacturing transparent conductive film |
| KR20230076717A (en) * | 2021-11-24 | 2023-05-31 | 순천향대학교 산학협력단 | Organic light emitting device and manufacturing method thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11217700B2 (en) | 2018-12-07 | 2022-01-04 | Cornell University | Micron scale tin oxide-based semiconductor devices |
| US11840772B2 (en) | 2021-01-26 | 2023-12-12 | Clemson University Research Foundation | Hydrothermal method for growth of alkaline earth metal stannate bulk single crystals and crystals formed thereby |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110051799A (en) | 2009-11-11 | 2011-05-18 | 삼성모바일디스플레이주식회사 | Thin film transistor and organic light emitting display device using thereof |
| KR20140076111A (en) | 2012-12-12 | 2014-06-20 | 한국전자통신연구원 | A transistor hanving nano layer structured oxides and method of manufacturing the same |
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| US8308886B2 (en) * | 2006-07-17 | 2012-11-13 | E I Du Pont De Nemours And Company | Donor elements and processes for thermal transfer of nanoparticle layers |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20110051799A (en) | 2009-11-11 | 2011-05-18 | 삼성모바일디스플레이주식회사 | Thin film transistor and organic light emitting display device using thereof |
| KR20140076111A (en) | 2012-12-12 | 2014-06-20 | 한국전자통신연구원 | A transistor hanving nano layer structured oxides and method of manufacturing the same |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11624109B2 (en) | 2017-12-22 | 2023-04-11 | Lg Chem, Ltd. | Method for manufacturing transparent conductive film |
| WO2021049686A1 (en) * | 2019-09-11 | 2021-03-18 | 서울대학교산학협력단 | Two-dimensional electron gas at interface between basno3 and laino3 |
| KR20230076717A (en) * | 2021-11-24 | 2023-05-31 | 순천향대학교 산학협력단 | Organic light emitting device and manufacturing method thereof |
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| WO2016153172A1 (en) | 2016-09-29 |
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