KR20160096997A - Organic Light Emitting Diode Display Device And Method Of Fabricating The Same - Google Patents

Abstract

An organic light emitting diode display device according to the present invention comprises: a first substrate; a gate line, a data line and a power line which are formed on an upper portion of the first substrate, and define a pixel area by crossing each other; at least one thin film transistor formed in the pixel area; a passivation layer formed on an upper portion of the thin film transistor; a first auxiliary electrode formed on a boundary of the pixel area at an upper portion of the passivation layer; a light emitting diode formed in the pixel area at the upper portion of the passivation layer, and connected to the first auxiliary electrode; and a second substrate bonded to the first substrate.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting diode (OLED) display device,

BACKGROUND OF THE INVENTION 1. Field of the Invention [0002] The present invention relates to an organic light emitting diode (OLED) display device, and more particularly to a top emission organic light emitting diode display device having a large area and a high resolution, and a method of manufacturing the same.

An organic light emitting diode (OLED) display device, which is one of a flat panel display (FPD), has a viewing angle and a contrast ratio compared with a liquid crystal display (LCD) Since it is excellent and it does not need a backlight, it can be lightweight and thin, and is also advantageous in terms of power consumption.

Also, because it can be driven by DC low voltage, has a fast response speed, and is solid, it is resistant to external impact, has a wide temperature range, and is especially advantageous in terms of manufacturing cost.

In addition, since the manufacturing process of the organic light emitting diode display device is all of deposition and encapsulation, the manufacturing process is very simple.

Such an organic light emitting diode display device can be divided into a top emission type and a bottom emission type according to a transmission direction of light emitted from the light emitting diode. Recently, the top emission type is mainly used.

In the organic light emitting diode (OLED) display device of the top emission type, the light emitted from the light emitting layer is emitted to the top. Therefore, there is an advantage that a plurality of thin film transistors and a plurality of capacitors can be freely arranged below the light emitting layer without decreasing the aperture ratio.

FIG. 1 is a cross-sectional view illustrating a conventional top emission organic light emitting diode display.

1, a conventional top emission type organic light emitting diode display 10 includes a first substrate 20, a thin film transistor T formed on the first substrate 20, and a light emitting diode And a second substrate 60 bonded to the first substrate 20 above the thin film transistor T and the light emitting diode ED. The thin film transistor T includes a gate electrode 22, The light emitting diode ED includes a first electrode 38, a light emitting layer 42, and a second electrode 44. The first electrode 38, the light emitting layer 42,

A gate electrode 22 is formed on the first substrate 20 and a gate insulating layer 24 is formed on the gate electrode 22. A gate electrode 22 on the gate insulating layer 24 is formed on the first substrate 20, The semiconductor layer 26 is formed.

An etch stopper 28 is formed on the semiconductor layer 26 and a source electrode 30 and a drain electrode 30 which are spaced apart from each other and contact the both ends of the semiconductor layer 26, 32 are formed.

A protection layer 34 is formed on the source electrode 30 and the drain electrode 32. The protection layer 34 includes a source contact hole 36 exposing the source electrode 30.

The first electrode 38 is connected to the source electrode 30 through the source contact hole 36 of the passivation layer 34. The first electrode 38 is formed in the pixel region above the passivation layer 34. [

A bank layer 40 covering the edge of the first electrode 38 is formed on the first electrode 38. The bank layer 40 includes an opening exposing the center of the first electrode 38. [

A light emitting layer 42 is formed on the bank layer 40. The light emitting layer 42 contacts the central portion of the first electrode 38 through the opening of the bank layer 40. [

A second electrode 44 is formed on the entire surface of the first substrate 20 above the light emitting layer 42.

The second substrate 60 is bonded to the first substrate 20 on the second electrode 44 using a seal pattern or the like to protect the light emitting diode ED.

Since the light emitted from the light emitting layer 42 is emitted through the second substrate 60 on the upper side in the top emission type organic light emitting diode display device 10, The aperture ratio does not decrease even if the driving elements are arranged, and thus it is particularly easy to apply to a display device with a large area and a high resolution.

The second electrode 44 on the light emitting layer 42 must be formed to be transparent so as to allow the light emitted from the light emitting layer 42 to pass therethrough. Since the light emitting layer 42 under the light emitting layer 42 is not damaged when the second electrode 44 is formed, The second electrode 44 should be formed by an evaporation method instead of the sputtering method.

However, a transparent conductive material such as indium tin oxide (ITO) has a problem that it is difficult to be formed by an evaporation method.

Accordingly, a structure has been developed in which a transparent second electrode 44 is formed by depositing a metal material such as a magnesium: silver (Ag: Ag) alloy through a vaporization method to form a thin film, but the second electrode 44 The resistance of the second electrode 44 increases, and as a result, the second electrode 44 of the metal material is difficult to apply to a large-area display device.

SUMMARY OF THE INVENTION The present invention has been made in order to solve such a problem, and a high resistance of an upper electrode is complemented by forming a contact portion in a light emitting layer using a laser and connecting an upper electrode of the light emitting diode to a lower auxiliary electrode through a contact portion An organic light emitting diode (OLED) display device and a method of manufacturing the same, which can be easily applied to a large-area high-resolution display.

The upper electrode of the light emitting diode is connected to the upper auxiliary electrode by using the conductive material layer and the connection pattern to further improve the high resistance of the upper electrode, Type organic light emitting diode display device and a method of manufacturing the same.

In order to solve the above problems, the present invention provides a liquid crystal display comprising: a first substrate; A gate wiring, a data wiring, and a power wiring formed on the first substrate and defining a pixel region intersecting with each other; At least one thin film transistor formed in the pixel region; A protective layer formed on the at least one thin film transistor; A first auxiliary electrode formed on a boundary portion of the pixel region above the protective layer; A light emitting diode formed in the pixel region above the protective layer and connected to the first auxiliary electrode; And a second substrate bonded to the first substrate.

The light emitting diode may include a reflective plate and a first electrode sequentially formed in a pixel region above the protective layer, a light emitting layer formed on the first electrode, and a second electrode formed on the light emitting layer have.

The organic light emitting diode display device may further include a bank layer covering an edge portion of the first electrode, wherein the bank layer includes: a first opening exposing a center portion of the first electrode; As shown in FIG.

The light emitting layer may include a contact portion corresponding to the second opening and exposing the first auxiliary electrode, and the second electrode may be connected to the first auxiliary electrode through the contact portion and the second opening portion .

The organic light emitting diode display device may further include a conductive material layer formed on the second electrode and corresponding to the second opening and the contact portion; A capping layer formed on the second electrode, the capping layer exposing the conductive material layer; A connection pattern formed under the second substrate and corresponding to the second opening and the contact portion; And a second auxiliary electrode formed under the connection pattern and connected to the conductive material layer.

The first and second auxiliary electrodes may be formed in a mesh shape corresponding to a boundary portion of the pixel region.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a gate wiring, a data wiring, and a power wiring crossing each other on a first substrate to define a pixel region; Forming at least one thin film transistor in the pixel region; Forming a protective layer over the at least one thin film transistor; Forming a reflective plate in the pixel region above the protective layer and forming a first auxiliary electrode in a boundary portion of the pixel region on the protective layer; Forming a first electrode on the reflection plate; Forming a bank layer on the first electrode, the bank layer including a first opening exposing a center portion of the first electrode and a second opening exposing the first auxiliary electrode; Forming a light emitting layer on the bank layer and including a contact portion corresponding to the second opening and exposing the first auxiliary electrode; Forming a second electrode on the light emitting layer, the second electrode being connected to the first auxiliary electrode through the contact portion and the second opening; And attaching the second substrate to the first substrate. The present invention also provides a method of manufacturing an organic light emitting diode display device.

The forming of the light emitting layer may include: a step of bringing a dummy substrate into close contact with an upper portion of the first substrate on which the light emitting layer is formed; And irradiating a laser beam to the light emitting layer through the dummy substrate to partially remove the light emitting layer corresponding to the second opening to form a contact portion exposing the first auxiliary electrode.

According to another aspect of the present invention, there is provided a method of manufacturing an organic light emitting diode display, comprising: forming a conductive layer corresponding to the second opening and the contact portion on the second electrode; Forming a capping layer on the second electrode to expose the conductive material layer; Forming a connection pattern corresponding to the second opening and the contact portion in the lower portion of the second substrate; And forming a second auxiliary electrode under the connection pattern.

The conductive material layer and the capping layer may be formed by an ink jet method.

In the present invention, a contact portion is formed in a light emitting layer using a laser, and an upper electrode of a light emitting diode is connected to a lower auxiliary electrode through a contact portion, thereby enhancing the high resistance of the upper electrode, It has an effect that it can be easily applied to an area high resolution.

In addition, the present invention uses the conductive material layer to connect the upper electrode of the light emitting diode to the upper auxiliary electrode, so that the high resistance of the upper electrode is further complemented and the upper light emitting type organic light emitting diode display device is more easily applied to a large area high resolution .

1 is a cross-sectional view illustrating a conventional top emission type organic light emitting diode display device.
2 is a plan view of a first substrate of an organic light emitting diode display device according to an embodiment of the present invention.
3 is a cross-sectional view of an organic light emitting diode display device according to an embodiment of the present invention.
4A to 4H illustrate a method of manufacturing an organic light emitting diode display device according to an embodiment of the present invention.

Hereinafter, an organic light emitting diode display device and a method of manufacturing the same according to the present invention will be described with reference to the accompanying drawings.

FIG. 2 is a plan view of a first substrate of an OLED display according to an embodiment of the present invention, FIG. 3 is a cross-sectional view of an organic light emitting diode display according to an embodiment of the present invention, Fig.

2 and 3, the organic light emitting diode display device 110 according to the embodiment of the present invention includes a first substrate 120, a switching thin film transistor (TFT) 120 formed on the first substrate 120 A driving thin film transistor Td and a light emitting diode ED and a second substrate 170 bonded to the first substrate 120 above the light emitting diode ED.

Specifically, a gate wiring 122, a data wiring 136, and a power wiring 138 are formed on the first substrate 120 so as to intersect with each other to define the pixel region P, A thin film transistor Ts, a driving thin film transistor Td and a light emitting diode ED are formed.

The switching thin film transistor Ts is connected to the gate wiring 122 and the data wiring 136. The driving thin film transistor Td is connected to the switching thin film transistor Ts and the power wiring 138. The light emitting diode ED, Is connected to the driving thin film transistor Td.

The switching thin film transistor Ts and the driving thin film transistor Td have the same structure. The driving thin film transistor Td includes a gate electrode 124, a semiconductor layer 128, a source electrode 132, and a drain electrode 134 .

That is, a gate electrode 124 is formed on the first substrate 120, a gate insulating layer 126 is formed on the gate electrode 124, and a gate electrode 124 is formed on the gate insulating layer 126 A semiconductor layer 128 is formed at a corresponding position.

An etch stopper 130 is formed on the semiconductor layer 128 and a source electrode 132 and a drain electrode 132 are formed on the etch stop layer 130 and are in contact with both ends of the semiconductor layer 128, 134 are formed.

Here, the gate wiring 122 and the gate electrode 124 are formed on the first substrate 120 with the same layer and the same material, and the data wiring 136 and the power wiring 138 are formed on the source electrode 132 and the drain Is formed on the gate insulating layer 126 in the same layer and the same material as the electrode 134.

A protective layer 140 is formed on the switching thin film transistor Ts and the driving thin film transistor Td. The protective layer 140 includes a source contact hole 142 exposing the source electrode 132.

A reflective plate 144 and a first electrode (lower electrode of a light emitting diode (ED)) 148 are sequentially formed on the pixel region P above the protective layer 140, A first auxiliary electrode (lower auxiliary electrode) 146 is formed at the boundary of the region P and the reflection plate 144 is connected to the source electrode 132 through the source contact hole 142.

The first auxiliary electrode 146 and the first auxiliary electrode 146 are formed of a metal material having a relatively high reflectance and may be formed of the same layer, And may be formed in a mesh form.

The first electrode 148 is made of a transparent conductive material such as indium tin oxide or indium tin oxide and is formed on the anode of the light emitting diode ED having a relatively high work function ).

3, the first auxiliary electrode 146 is formed of the same layer and the same material as that of the reflection plate 144. However, in another embodiment, the first auxiliary electrode 146 is disposed between the reflection plate 144 and the first electrode 148 ), And the same material.

A bank layer 150 covering the edge of the first electrode 148 is formed on the first electrode 148. The bank layer 150 includes a first opening 152 exposing the center of the first electrode 148, And a second opening 154 exposing the first auxiliary electrode 146.

For example, the first opening 152 has a size corresponding to the center of the first electrode 148 and is formed in each pixel region P, the second opening 154 has a corresponding size, (P).

2, the second opening 154 is formed above the intersection of the gate wiring 122, the data wiring 136, and the power wiring 138 at the boundary of the adjacent pixel region P, The second opening 154 may be formed on the gate wiring 122, the data wiring 136 or the power wiring 138 at the boundary of the adjacent pixel region P and the number of the second openings 154 And the size can be variously changed.

A light emitting layer 156 is formed on the bank layer 150. The light emitting layer 156 is connected to the center of the first electrode 148 through the first opening 152 of the bank layer 150. [ The light emitting layer 156 has a contact portion 158 corresponding to the second opening portion 154 and exposing the first auxiliary electrode 146 at the lower portion.

A second electrode 160 is formed on the entire surface of the first substrate 120 on the light emitting layer 156. The second electrode 160 is formed on the contact portion 158 of the light emitting layer 156 And the second opening 154 of the bank layer 150. The first auxiliary electrode 146 is connected to the lower first auxiliary electrode 146 through the second opening 154 of the bank layer 150. [

The second electrode 160 may be formed of a metal material such as a magnesium: silver (Ag: Ag) alloy. The second electrode 160 may be formed to have a thin thickness to allow the light of the light emitting layer 156 to pass therethrough. And may be a cathode of a light emitting diode (ED).

A conductive material layer 162 is formed on the second electrode 160 corresponding to the second opening 154 and the contact portion 158. The conductive material layer 162 is formed of silver paste or conductive organic material Lt; / RTI >

A capping layer 164 is formed on the front surface of the first substrate 120 above the second electrode 160. The capping layer 164 exposes the conductive material layer 162.

A black matrix 172 corresponding to the gate wiring 122, the data wiring 136 and the power wiring 138 of the first substrate 120 is formed under the second substrate 170. The black matrix 172 A protruding connection pattern 174 corresponding to the second opening 154 and the contact portion 158 of the first substrate 120 is formed.

The black matrix 172 may be made of an opaque organic material or a metallic material.

A second auxiliary electrode (upper auxiliary electrode) 176 corresponding to the black matrix 172 is formed under the connection pattern 174 and the black matrix 172. The second auxiliary electrode 176 corresponds to the adjacent pixel region P And the second auxiliary electrode 176 under the connection pattern 174 is connected to the conductive material layer 162 of the first substrate 120. The second auxiliary electrode 176 may be formed in the shape of a mesh corresponding to the boundary portion of the first substrate 120. [

The second auxiliary electrode 176 may be made of a metal material.

In the organic light emitting diode display 110 according to the embodiment of the present invention as described above, the second electrode 160 of the light emitting diode ED is electrically connected to the first electrode 154 through the second opening 154 and the contact portion 158, The voltage applied to the second electrode 160 can be uniformly maintained by compensating the high resistance of the second electrode 160 having a small thickness by the first auxiliary electrode 146. [

Since the second electrode 160 of the light emitting diode ED is connected to the second auxiliary electrode 176 through the conductive material layer 162, The voltage applied to the second electrode 160 can be more uniformly compensated by the electrode 176. [

Therefore, it can be more easily applied to a large-area high-resolution display device.

A manufacturing method of such an organic light emitting diode display device will be described with reference to the drawings.

4A to 4H illustrate a method of manufacturing an organic light emitting diode display device according to an embodiment of the present invention, which corresponds to the cutting line IV-IV in FIG. 2, and FIG. 2 and FIG. 3 together Explain.

4A, a gate wiring 122 is formed on the first substrate 120, a gate insulating layer 126 is formed on the gate wiring 122, The power wiring 138 is formed.

A switching thin film transistor Ts and a driving thin film transistor Td are formed in the pixel region P above the first substrate 120.

Then, a protective layer 140 is formed on the switching thin film transistor Ts, the driving thin film transistor Td, the data wiring 136, and the power wiring 138.

A reflective electrode 144 and a first electrode 148 are formed on the pixel region P above the passivation layer 140 and a first auxiliary electrode 140 is formed on the boundary of the pixel region P above the passivation layer 140. [ 146 are formed.

The first auxiliary electrode 146 and the first auxiliary electrode 146 are formed of a metal material having a relatively high reflectance and may be formed of the same layer, And may be formed in a mesh form.

The first electrode 148 is made of a transparent conductive material such as indium tin oxide or indium tin oxide and is formed on the anode of the light emitting diode ED having a relatively high work function ).

The reflective plate 144, the first auxiliary electrode 146 and the first electrode 148 may be formed through two mask processes including deposition of a metal material, exposure and etching, deposition of a transparent conductive material, exposure and etching, The mask can be formed through one mask process using a semitransmissive mask consisting of continuous deposition of a metal material and a transparent conductive material, exposure, etching, ashing, and etching.

A bank layer 150 is formed on the first auxiliary electrode 146 and the first electrode 148. The bank layer 150 includes a first opening 152 exposing the center of the first electrode 148, And a second opening 154 exposing the first auxiliary electrode 146.

For example, the first opening 152 has a size corresponding to the center of the first electrode 148 and is formed in each pixel region P, the second opening 154 has a corresponding size, (P).

The light emitting layer 156 is formed on the bank layer 150 as shown in FIG. The light emitting layer 156 may include at least one of a hole injection layer (HIL), a hole transport layer (HTL), an emission material layer (EML), an electron transport layer (ETL) emitting material layer EML may be formed by selectively applying a red, green, or blue light emitting material layer EML to each pixel region P by using a shadow mask. (HIL), a hole transport layer (HTL), an electron transport layer (ETL), and an electron injection layer (EIL) are formed on the entire surface of the first substrate 120 without using a shadow mask.

Therefore, the common layer of the hole injection layer (HIL), the hole transport layer (HTL), the electron transport layer (ETL), and the electron injection layer (EIL) Not only on the first electrode 148 exposed through the first opening 152 but also on the bank layer 150 at the boundary of the adjacent pixel region P and the bank layer The first auxiliary electrode 146 is exposed through the second opening 154 of the first auxiliary electrode 150.

The dummy substrate 157 is brought into close contact with the first substrate 120 on which the light emitting layer 156 is formed and the light emitting layer 156 corresponding to the second opening 154 is formed on the dummy substrate 157, The light emitting layer 156 corresponding to the second opening 154 is partially evaporated and removed.

Here, the laser may have a wavelength that can pass through the dummy substrate 157 and can be absorbed by the light emitting layer 156, and energy that can evaporate the light emitting layer 156.

The dummy substrate 157 can be closely aligned with the first substrate 120 on which the light emitting layer 156 is formed and the organic material of the light emitting layer 156 evaporated by the laser irradiation is adsorbed on the dummy substrate 157 So that contamination by evaporated organic substances can be prevented.

In another embodiment in which the contamination by the evaporated organic material is not a problem, the luminescent layer 156 may be directly irradiated with the laser without the dummy substrate 157.

The contact portion 158 corresponding to the second opening portion 154 of the bank layer 150 is formed in the light emitting layer 156 by laser irradiation as shown in Fig. Is exposed through the second opening 154 of the bank layer 150 and the contact portion 158 of the light emitting layer 156.

A second electrode 160 is formed on the entire surface of the first substrate 120 above the light emitting layer 156. The second electrode 160 is formed on the contact portion 158 of the light emitting layer 156 and the second electrode 160, And is connected to the lower first auxiliary electrode 146 through the second opening 154 of the bank layer 150.

The second electrode 160 may be formed by evaporation using a metal material such as a magnesium: silver (Ag: Ag) alloy. The second electrode 160 may be formed to have a thin thickness And may be a cathode of a light emitting diode (ED) having a relatively low work function.

A conductive material layer 162 is formed on the second electrode 160 corresponding to the second opening 154 and the contact portion 158. The conductive material layer 162 is formed of a silver paste or may be formed by an inkjet method using a silver paste or a conductive organic material.

4G, a capping layer 164 is formed on the entire surface of the first substrate 120 above the second electrode 160 to expose the conductive material layer 162. The capping layer 164 exposes the capping layer 164 ) Can be formed by an inkjet method using an insulating material.

A conductive material layer 162 is formed on the second electrode 160 corresponding to the second opening 154 and the contact portion 158 and then the second electrode 160 corresponding to the pixel region P The capping layer 164 is formed on the second electrode 160 corresponding to the pixel region P and then the capping layer 164 is formed on the second opening portion 154 and the capping layer 164, A conductive material layer 162 may be formed on the second electrode 160 corresponding to the contact portion 158.

A second substrate 170 having a black matrix 172, a connection pattern 174 and a second auxiliary electrode 176 sequentially formed therebelow by using a seal pattern (not shown) Is bonded to the first substrate 120 on which the conductive material layer 162 and the capping layer 164 are formed to complete the organic light emitting diode display device 110.

The black matrix 172 may be made of an opaque organic material or a metal material, and the second auxiliary electrode 176 may be made of a metal material.

The black matrix 172 and the second auxiliary electrode 176 may be formed in the shape of a mesh corresponding to the boundary portion of the adjacent pixel region P and the connection pattern 174 may be formed in the second opening The light emitting layer 154 and the contact portion 158 of the light emitting layer 156 can be formed.

A second auxiliary electrode 176 protruding from the bottom of the connection pattern 174 of the second substrate 170 by the adhesion is connected to the conductive material layer 162 of the first substrate 120, The second electrode 160 of the second electrode ED is connected to the second auxiliary electrode 176 through the conductive material layer 162.

As described above, in the organic light emitting diode display device 110 according to the embodiment of the present invention as described above, the contact portion 158 is formed in the light emitting layer 156 using the laser, and the second portion 158 of the light emitting diode ED The electrode 160 is connected to the first auxiliary electrode 146 through the contact portion 158 so that the high resistance of the second electrode 160 having a small thickness is compensated by the first auxiliary electrode 146, The voltage applied to the first electrode 160 can be uniformly maintained.

A conductive material layer 162 is formed on the second electrode 160 by the ink jet method and the second electrode 160 of the light emitting diode ED is electrically connected to the second auxiliary electrode 176 through the conductive material layer 162. [ The high resistance of the second electrode 160 having a small thickness can be further compensated for by the second auxiliary electrode 176, so that the voltage applied to the second electrode 160 can be more uniformly maintained.

Therefore, it can be more easily applied to a large-area high-resolution display device.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention as defined in the appended claims. It can be understood that

110: organic light emitting diode display device 120: first substrate
170: second substrate 144: reflector
146: first auxiliary electrode 148: first electrode
156: light emitting layer 160: second electrode
176: Second auxiliary electrode

Claims (10)

A first substrate;
A gate wiring, a data wiring, and a power wiring which are formed on the first substrate and define pixel regions intersecting with each other;
At least one thin film transistor formed in the pixel region;
A protective layer formed on the at least one thin film transistor;
A first auxiliary electrode formed on a boundary portion of the pixel region above the protective layer;
A light emitting diode formed in the pixel region above the protective layer and connected to the first auxiliary electrode;
A second substrate bonded to the first substrate,
And an organic light emitting diode (OLED) display device.
The method according to claim 1,
The light emitting diode includes an organic light emitting diode including a reflective plate and a first electrode sequentially formed in a pixel region above the protective layer, a light emitting layer formed on the first electrode, and a second electrode formed on the light emitting layer, Display device.
3. The method of claim 2,
And a bank layer covering an edge portion of the first electrode,
Wherein the bank layer includes a first opening exposing a center portion of the first electrode and a second opening exposing the first auxiliary electrode.
The method of claim 3,
Wherein the light emitting layer includes a contact portion corresponding to the second opening and exposing the first auxiliary electrode,
And the second electrode is connected to the first auxiliary electrode through the contact portion and the second opening.
5. The method of claim 4,
A conductive material layer formed on the second electrode and corresponding to the second opening and the contact portion;
A capping layer formed on the second electrode, the capping layer exposing the conductive material layer;
A connection pattern formed under the second substrate and corresponding to the second opening and the contact portion;
A second auxiliary electrode formed at the lower portion of the connection pattern and connected to the conductive material layer,
And an organic light emitting diode (OLED) display device.
6. The method of claim 5,
Wherein the first and second auxiliary electrodes are formed in a mesh shape corresponding to a boundary portion of the pixel region, respectively.
Forming gate wirings, data wirings, and power wirings crossing each other on the first substrate to define pixel regions;
Forming at least one thin film transistor in the pixel region;
Forming a protective layer over the at least one thin film transistor;
Forming a reflective plate in the pixel region above the protective layer and forming a first auxiliary electrode in a boundary portion of the pixel region on the protective layer;
Forming a first electrode on the reflection plate;
Forming a bank layer on the first electrode, the bank layer including a first opening exposing a center portion of the first electrode and a second opening exposing the first auxiliary electrode;
Forming a light emitting layer on the bank layer and including a contact portion corresponding to the second opening and exposing the first auxiliary electrode;
Forming a second electrode on the light emitting layer, the second electrode being connected to the first auxiliary electrode through the contact portion and the second opening;
Attaching a second substrate to the first substrate
Wherein the organic light emitting diode display device comprises:
8. The method of claim 7,
The forming of the light emitting layer may include:
Bonding a dummy substrate to an upper portion of the first substrate on which the light emitting layer is formed;
Forming a contact portion for exposing the first auxiliary electrode by partially removing the light emitting layer corresponding to the second opening by irradiating a laser beam onto the light emitting layer through the dummy substrate
Wherein the organic light emitting diode display device comprises:
8. The method of claim 7,
Forming a conductive material layer corresponding to the second opening and the contact portion on the second electrode;
Forming a capping layer on the second electrode to expose the conductive material layer;
Forming a connection pattern corresponding to the second opening and the contact portion in the lower portion of the second substrate;
Forming a second auxiliary electrode below the connection pattern;
Wherein the organic light emitting diode display device further comprises:
10. The method of claim 9,
Wherein the conductive material layer and the capping layer are formed by an ink-jet method.

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