KR20160069546A - Apparatus for processing substrate - Google Patents

Abstract

The present invention discloses an apparatus for treating a substrate. The apparatus for treating a substrate includes: a chamber forming a space which a substrate is inserted into and is treated in; a first electrode plate having a plurality of electrode rods projecting toward the substrate; and a second electrode plate having a plurality of through holes through which the electrode rods penetrate the second substrate. According to the apparatus for treating a substrate of the present invention, the distance between an outer circumferential surface of the electrode and an outer circumferential surface of the though hole of the second electrode plate, through which the electrode rods penetrate, is 1.5 to 20 mm. Therefore, decomposition efficiency of gas is improved and accordingly, a deposition ratio of a film deposited on the substrate is improved, so the quality of the film deposited on the substrate can be improved.

Description

[0001] APPARATUS FOR PROCESSING SUBSTRATE [0002]

The present invention relates to a substrate processing apparatus in which an interval between an outer circumferential surface of an electrode rod of a first electrode plate and an inner circumferential surface of a through hole of a second electrode plate through which an electrode rod penetrates is set to an optimum value.

In order to manufacture a semiconductor device, a flat panel display, or a thin-film solar cell, a deposition process of depositing a specific material on a surface of a substrate to form a thin film, a process of exposing a selected region of the thin film formed using a photosensitive material, A photolithography process for removing the selected thin film, and an etching process for forming a pattern.

The semiconductor manufacturing processes are performed in a substrate processing apparatus optimally designed for each process, and in recent years, a substrate processing apparatus for performing a deposition process or an etching process using plasma is widely used.

A general substrate processing apparatus for performing PECVD (Plasma Enhanced Chemical Vapor Deposition) on a substrate using plasma is provided with a chamber for forming a space through which a substrate is introduced and processed.

A supporting unit for supporting the substrate is installed on the lower surface side of the chamber and a gas supply unit for supplying gas according to the characteristics of the thin film to be formed on the substrate is provided on the outer surface.

A first electrode plate for uniformly supplying gas supplied from the gas supply unit to the substrate side is provided on the inner upper surface side of the chamber and a plurality of electrode rods are protruded from the lower surface of the first electrode plate. A second electrode plate is provided on the lower side of the first electrode plate, and a through hole is formed on the second electrode plate so that a lower side portion of the electrode is inserted.

Thus, when the RF power is applied to the electrode through the first electrode plate while the gas of the gas supply unit is injected to the lower side of the first electrode plate, the gap between the electrode rod and the through- Plasma discharges are generated and molecules of the gas ionized by the plasma discharge are deposited on the substrate to form a thin film. That is, the space between the outer peripheral surface of the electrode and the inner peripheral surface of the through hole is the plasma discharge space.

At this time, if the distance between the outer circumferential surface of the electrode and the inner circumferential surface of the through hole is narrow, the decomposition rate of the gas due to plasma becomes low. If the distance between the outer circumferential surface of the electrode and the inner circumferential surface of the through hole is wide, There is a problem that the discharge state of the discharge cell becomes unstable. Then, the deposition rate is lowered and the film quality is lowered.

Therefore, it is necessary to set an optimum set value for the interval between the outer circumferential surface of the electrode of the first electrode plate which is the plasma discharge space and the inner circumferential surface of the through hole of the second electrode plate.

It is an object of the present invention to provide a substrate processing apparatus capable of solving all the problems of the prior art as described above.

It is another object of the present invention to provide a plasma processing method and a plasma processing method in which the distance between the outer circumferential surface of the electrode plate of the first electrode plate forming the plasma discharge space and the inner circumferential surface of the through hole of the second electrode plate is optimized, The substrate processing apparatus according to the present invention can be provided.

According to an aspect of the present invention, there is provided a substrate processing apparatus including: a chamber forming a space through which a substrate is introduced and processed; A first electrode plate disposed inside the chamber and having a plurality of electrode rods facing the substrate and protruding toward the substrate; And a second electrode plate disposed inside the chamber and having a plurality of through holes through which the electrode rod passes, wherein the distance between the outer circumferential surface of the first electrode rod and the inner circumferential surface of the through hole is 1.5 mm to 20 mm .

In the substrate processing apparatus according to the embodiments of the present invention, the distance between the outer circumferential surface of the electrode rod and the outer circumferential surface of the through hole of the second electrode plate through which the electrode rod penetrates is set to 1.5 mm to 20 mm. Then, the decomposition rate of the gas is improved, and the deposition rate of the film deposited on the substrate is improved, so that the quality of the film deposited on the substrate may be improved.

1 is a sectional view showing a configuration of a substrate processing apparatus according to an embodiment of the present invention;
FIG. 2 is an exploded perspective view of the first electrode plate and the second electrode plate shown in FIG. 1; FIG.
3 is a bottom view of the coupling of Fig.
4 is an enlarged view of a portion "A" in FIG.
FIG. 5 is a view showing a deposition rate according to an interval between an electrode of a first electrode plate and a through hole of a second electrode plate of a substrate processing apparatus according to an embodiment of the present invention. FIG.
6 and 7 are combined bottom views showing through holes of the electrode plate and the second electrode plate of the first electrode plate according to another embodiment of the present invention.
8 is a cross-sectional view showing a configuration of a substrate processing apparatus according to another embodiment of the present invention.

It should be noted that, in the specification of the present invention, the same reference numerals as in the drawings denote the same elements, but they are numbered as much as possible even if they are shown in different drawings.

Meanwhile, the meaning of the terms described in the present specification should be understood as follows.

The word " first, "" second," and the like, used to distinguish one element from another, are to be understood to include plural representations unless the context clearly dictates otherwise. The scope of the right should not be limited by these terms.

It should be understood that the terms "comprises" or "having" does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

It should be understood that the term "at least one" includes all possible combinations from one or more related items. For example, the meaning of "at least one of the first item, the second item and the third item" means not only the first item, the second item or the third item, but also the second item and the second item among the first item, Means any combination of items that can be presented from more than one.

The term "above" means not only when a configuration is formed directly on top of another configuration, but also when a third configuration is interposed between these configurations.

Hereinafter, a substrate processing apparatus according to embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a cross-sectional view illustrating the structure of a substrate processing apparatus according to an embodiment of the present invention, and FIG. 2 is an exploded perspective view of the first electrode plate and the second electrode plate shown in FIG.

As shown, the substrate processing apparatus according to an embodiment of the present invention may include a chamber 110, which is a space in which the substrate 50 is processed. The chamber 110 has a main body 111 with an upper surface opened and a lower surface with a lower surface coupled to the opened upper surface of the main body 111, 115).

Hereinafter, referring to the face and direction of other components including the chamber 110, the face and direction of the chamber 110 facing upward are referred to as " upper and upper sides " The lower surface and the direction "lower and lower sides ".

It is a matter of course that the upper and lower surfaces of the chamber 110 are the lower surface of the main body 111 and the upper surface of the lead 115, respectively, because the mutually coupled main body 111 and the lid 115 form the chamber 110.

A supporting unit 120 supporting the substrate 50 may be installed on the lower surface side of the chamber 110 to be movable up and down. The support unit 120 is connected to the lower surface of the seat unit 121 and the support shaft 123 exposed to the outside of the chamber 110. The support unit 120 includes a support member 121 such as a susceptor, A driving part 125 for lifting or rotating the supporting shaft 123 and a bellows 127 enclosing the supporting shaft 123 and sealing the space between the supporting shaft 123 and the chamber 110 can do. The position of the substrate 50 can be adjusted according to the characteristics of the thin film to be formed on the substrate 50 because the positioning unit 121 on which the substrate 50 is placed is moved up and down by the driving unit 125.

A gas supply part 130 for supplying a gas according to the characteristics of a thin film to be formed on the substrate 50 may be provided on an outer upper surface of the lead 115. The gas supply part 130 may include a first gas supply part 131, 2 gas supply unit 135, as shown in FIG.

The first gas supply unit 131 can supply the gas to the space 142 formed between the lead 115 and the first electrode plate 141 forming the upper side of the gas injection unit 140 to be described later, The second gas supply unit 135 can supply gas to the flow path 141c formed in the first electrode plate 141. [

At this time, the first gas supply unit 131 may supply the first gas containing the reactive gas, and the second gas supply unit 135 may supply the second gas different in composition from the first gas, . It is natural that the first gas supply part 131 supplies the second gas and the second gas supply part 135 can supply the first gas.

An inlet port (not shown) for loading or unloading the substrate 50 may be formed in the chamber 110 and an outlet port 112 for discharging gas or the like may be formed. .

A gas injection unit 140 for diffusing the first gas and the second gas supplied from the gas supply unit 130 and supplying the first gas and the second gas to the substrate 50 can be detachably installed on the inner upper surface side of the lead 115. [ It is preferable that the gas injection unit 140 be opposed to the seating means 121 on which the substrate 50 is placed.

The gas injection unit 140 will be described with reference to Figs. 1 to 5. Fig. FIG. 3 is an exploded bottom view of FIG. 2, FIG. 4 is an enlarged view of the "A" portion of FIG. 1, and FIG. 5 is a cross-sectional view of the electrode plate of the first electrode plate of the substrate processing apparatus according to the embodiment of the present invention, And the deposition rate according to the distance between the through holes of the plate.

As shown, the gas injection unit 140 may include a first electrode plate 141, an electrode rod 143, a second electrode plate 145, and an insulating member 147.

The first electrode plate 141 may be formed of a metal such as aluminum or the like and may have a plate shape having a predetermined thickness and may be coupled to the inner upper surface side of the lead 115. The first electrode plate 141 can function as a ground electrode and can be electrically grounded through the lead 115. [

A bending tab 141a bending upward may be formed on the edge of the first electrode plate 141. A bending tab 141a may be formed between the lead 115 and the first electrode plate 141, A space 142 through which the first gas supplied from the supply unit 131 is diffused may be formed.

A plurality of through holes 141b may be formed in the first electrode plate 141 in the vertical direction and an upper end of the through holes 141b may communicate with the space 142. [ An electrode rod 143 may be integrally formed on the lower end side of the through-hole 141b of the first electrode plate 141. [ The electrode rod 143 may be detachably coupled to the first electrode plate 141 and may be attached to the outer circumferential surface of the electrode rod 143 and the through hole 141b so that the electrode rod 143 can be attached to and detached from the first electrode plate 141. [ A screw thread may be formed on the outer circumferential surface on the lower end side,

An injection path 143a may be formed in the electrode rod 143 along the longitudinal direction of the electrode rod 143 and the injection path 143a may communicate with the space 142 via the through passage 141b . Therefore, the first gas introduced into the space 142 can be supplied to the spray path 143a through the through passage 141b.

The first electrode plate 141 may be provided with a flow path 141c through which the second gas supplied from the second gas supply unit 135 flows and the second gas of the flow path 141c flows through the first electrode plate 141, And can be injected through a plurality of spray holes 141d formed on the lower surface of the electrode plate 141 and communicated with the flow path 141c. At this time, the spray holes 141d may be formed so as to surround each of the electrode rods 143.

A plate-shaped second electrode plate 145 may be coupled to the lower surface of the first electrode plate 143.

The second electrode plate 145 may have a through hole 145a through which the lower end of the electrode 143 is located. At this time, a space serving as a discharge space (PDS) may be formed between the inner circumferential surface of the through hole 145a and the outer circumferential surface of the electrode rod 143. [ Then, it is natural that the second gas injected through the injection hole 141d flows into the plasma discharge space (PDS) and is injected toward the substrate 50 side.

The electrode rod 143 and the through hole 145a of the second electrode plate 145 are preferably concentric.

The second gas supplied to the plasma discharge space PDS is activated by the plasma and is supplied to the substrate 50 through the second electrode plate 145. [ And the first gas is injected downward onto the substrate 50 through the spray path 143a of the electrode rod 143. [ As a result, the thin film layer can be formed on the substrate 50 by reacting the activated second gas with the first gas.

An insulating plate (not shown) formed of ceramic or the like may be provided between the first electrode plate 141 and the second electrode plate 145. The insulating plate serves to insulate the first electrode plate 141 and the second electrode plate 145 or to maintain a potential difference.

When the insulating plate is provided, a through hole (not shown) through which the electrode rod 143 passes may be formed on the insulating plate. It is a matter of course that a gap is formed between the through-hole of the insulating plate and the electrode rod 143 so that the second gas can pass through.

An insulating member 147 formed of ceramic may be detachably coupled to the bottom edge portion and the side surface of the second electrode plate 145. The insulating member 145 can electrically insulate the second electrode plate 145 from the lead 115. [

If the distance D between the outer circumferential surface of the electrode rod 143 and the inner circumferential surface of the through hole 145a of the second electrode plate 145 is not appropriate, the quality of the film deposited on the substrate 50 may be deteriorated. More specifically, if the distance D between the outer circumferential surface of the electrode rod 143 and the inner circumferential surface of the through hole 145a of the second electrode plate 145 is narrow, the decomposition rate of the gas by the plasma becomes low, The discharge state of the plasma becomes unstable when the distance D between the outer peripheral surface of the second electrode plate 143 and the inner peripheral surface of the through hole 145a of the second electrode plate 145 is wide, .

The substrate processing apparatus according to the present embodiment can appropriately form the gap D between the outer circumferential surface of the electrode rod 143 and the inner circumferential surface of the through hole 145a of the second electrode plate 145 to improve the gas decomposition rate .

More specifically, after the through hole 145a of the electrode rod 143 and the second electrode plate 145 is formed in a circular shape, the inner circumferential surface of the through hole 145a of the electrode rod 143 and the second electrode plate 145 Can be formed to have a distance D of 1.5 mm to 20 mm.

5, the deposition rate of the film deposited on the substrate 50 according to the distance D between the outer circumferential surface of the electrode rod 143 and the inner circumferential surface of the through hole 145a of the second electrode plate 145 The film is deposited on the substrate 50 when the distance D between the outer circumferential surface of the electrode rod 143 and the inner circumferential surface of the through hole 145a of the second electrode plate 145 is 1.5 mm to 20 mm The deposition rate (A / Min) was measured to be about 400 to 1650 (A / Min). It can be seen that the deposition rate is very fast and the decomposition rate of the gas is excellent.

Particularly, when the distance D between the outer circumferential surface of the electrode rod 143 and the inner circumferential surface of the through hole 145a of the second electrode plate 145 is 4 mm to 17 mm, the deposition rate (A / Min) The deposition rate (Å / Min) was excellent when the distance D between the outer circumferential surface of the electrode rod 143 and the inner circumferential surface of the through hole 145a of the second electrode plate 145 was 7 mm to 13 mm. / Min) was about 1400 ~ 1650 (Å / Min).

FIGS. 6 and 7 are bottom views showing the through holes of the electrode plate and the second electrode plate of the first electrode plate according to another embodiment of the present invention, and only differences from FIG. 3 will be described.

6, the through holes 245a of the electrode rod 243 and the second electrode plate 245 may be formed in an elliptical shape. As shown in FIG. 7, the electrode rod 343 and the second electrode And the through holes 345a of the plate 345 may be formed by rectangles whose edges are rounded.

Similar results were obtained with the through holes 245a and 345a of the electrode rods 243 and 343 and the second electrode plates 245 and 345 shown in Figs. 6 and 7, similar to the deposition rates described in Fig.

FIG. 8 is a cross-sectional view showing a configuration of a substrate processing apparatus according to another embodiment of the present invention, and only differences from FIG. 1 will be described.

As shown in the figure, the first electrode plate 141 may be connected to the plasma power supply unit to function as a plasma electrode, and the second electrode plate 145 may serve as a ground electrode. The first electrode plate 141 may be insulated by an insulating member 147 and the second electrode plate 145 may be electrically grounded via a lead 115. [

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Will be clear to those who have knowledge of. Therefore, the scope of the present invention is defined by the appended claims, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be interpreted as being included in the scope of the present invention.

111: chamber
115: Lead
140: Gas injection unit
141: first electrode plate
143: Electrode
145: insulating plate
145: second electrode plate

Claims (4)

A chamber forming a space through which the substrate is introduced and processed;
A first electrode plate disposed inside the chamber and having a plurality of electrode rods facing the substrate and protruding toward the substrate;
And a second electrode plate provided inside the chamber and having a plurality of through holes through which the electrode rod passes,
Wherein a distance between an outer peripheral surface of the first electrode rod and an inner peripheral surface of the through hole is 1.5 mm to 20 mm. The method according to claim 1,
Wherein the electrode bar and the through-hole are formed in a circular shape. The method according to claim 1,
Wherein the electrode rod and the through hole are formed in an elliptical shape. The method according to claim 1,
Wherein the electrode rod and the through-hole are each formed with a rounded corners at corners.

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