KR101206975B1 - Semiconductor Processing Apparatus having Shower Head Generating Plasma - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor processing apparatus, and more particularly, to a semiconductor processing apparatus having a shower head for generating a plasma in order to perform a semiconductor process such as etching or depositing a surface of a substrate such as a wafer.

The present invention provides a chamber, a substrate support for supporting a substrate to be processed in the lower side of the chamber to support the semiconductor processing, an RF electrode installed on the upper side of the chamber, and a predetermined interval at a lower portion of the RF electrode. A first shower head integrally formed with three injection pipes, and a second shower head provided with a plurality of second through holes and a first through hole into which the injection pipes are fitted, respectively, and having a predetermined distance from the first shower head. In addition, the present invention discloses a semiconductor processing apparatus, characterized in that the plasma forming portion is formed on the upper side of the injection pipe formed in the first shower head. The semiconductor processing apparatus according to the present invention has the advantage of simplifying the structure of the RF electrode and the shower head by forming the plasma forming unit integrally with the shower head and forming the plasma only in the plasma forming unit.

Semiconductor Process, Shower Head, Plasma, Deposition

Description

Semiconductor Processing Apparatus With Shower Head Generating Plasma {Semiconductor Processing Apparatus having Shower Head Generating Plasma}

1A is a cross-sectional view illustrating a conventional semiconductor processing apparatus.

FIG. 1B is a partially enlarged cross-sectional view illustrating the portion 'A' in FIG. 1A.

2 is a cross-sectional view illustrating a semiconductor processing apparatus according to a first embodiment of the present invention.

3 is a plan view illustrating a first shower head of the semiconductor processing apparatus of FIG. 2.

4A is a partially enlarged cross-sectional view illustrating an enlarged portion 'C' in FIG. 2.

4B and 4C are partially enlarged cross-sectional views illustrating modified examples of the semiconductor processing apparatus of FIG. 2, respectively.

5 is a cross-sectional view illustrating a semiconductor processing apparatus according to a second exemplary embodiment of the present invention.

FIG. 6A is a partially enlarged cross-sectional view illustrating an enlarged portion 'D' in FIG. 5.

6B is a partially enlarged cross-sectional view illustrating a modification of the semiconductor processing apparatus of FIG. 5.

***** Explanation of symbols for main parts of drawing *****

100: chamber 200: RF electrode

310: first showerhead 320: second showerhead

410: substrate support 420: exhaust pipe

510: reaction gas supply pipe 520: raw material gas supply pipe

600: plasma generating unit 650: injection tube

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor processing apparatus, and more particularly, to a semiconductor processing apparatus having a shower head for generating a plasma for performing a semiconductor process such as etching or deposition on a surface of a substrate such as a wafer.

The semiconductor processing apparatus refers to an apparatus for performing a semiconductor process, such as etching or depositing a substrate using a physical or chemical reaction such as a plasma phenomenon in a vacuum state. In the semiconductor processing apparatus, a reaction gas is generally injected through a shower head installed in a chamber to perform a semiconductor process, and the injected reaction gas forms a plasma in the chamber by applying power, and a plasma state such as radicals formed in the chamber is applied. The surface of the substrate is etched or deposited according to the purpose of the semiconductor process by the material, and the semiconductor process is performed.

In addition, the gas injected into the chamber to perform the semiconductor process is composed of a reaction gas and a source gas for performing a deposition process.

However, the conventional semiconductor processing apparatus causes damage to the substrate and the circuit elements formed on the substrate due to arc generation, collision of ions, ion implantation, etc. in the chamber when plasma is formed to perform the semiconductor process, resulting in process defects. There is a problem that can be done.

On the other hand, in the Republic of Korea Patent Publication No. 10-2005-0087405, 10-2003-0085195, etc., in order to solve the above problems, after forming the plasma in the shower head through the injection hole formed in the shower head to the processing space inside the chamber A semiconductor processing apparatus having a configuration for injecting a substance in a plasma state is proposed.

1A is a cross-sectional view illustrating a conventional semiconductor processing apparatus, and FIG. 1B is a partially enlarged cross-sectional view of an enlarged portion 'A' in FIG. 1A. [0007] A conventional semiconductor processing apparatus is shown in FIGS. 1A and 1B. 10), the RF electrode 20 provided on the upper side of the chamber 10, and the shower head portion 30 provided at regular intervals from the RF electrode (20). The shower head unit 30 includes a first shower head 31 and a second shower head 32 provided at predetermined intervals.

The chamber 10 includes a substrate support 41 for supporting the substrate 1, an exhaust pipe 42 for exhausting pressure in the chamber and gas in the chamber, and a gas supply system 50 for supplying gas into the chamber 10. Is installed. The gas supply system 50 includes a reaction gas supply pipe 51 for supplying a plasma generating gas and a reaction gas decomposed by the plasma, and a source gas supply pipe for supplying a source gas and a carrier gas for semiconductor processing such as a deposition process ( 52). The RF electrode 20 is insulated from the inner wall of the chamber 10 and the first and second shower heads 31 and 32 and at the same time, the power is supplied by the connecting rod 21 to supply the external power 55 of the RF method or the DC method. ) Is electrically connected.

The first shower head 31 is composed of a flat plate having a plurality of through holes 31a formed thereon, and forms a plasma forming unit 60 on which plasma is formed when power is applied to the RF electrode 20. Auxiliary flat plate 33 is installed.

The second shower head 32 includes a plurality of first through holes 32a and second through holes 32b and a flat plate provided at a predetermined distance from the first shower head 31. The first through hole 32a is fitted with an injection tube 65 fitted into the through hole 31a of the first shower head 31 so that the plasma substance formed in the plasma forming unit 60 is injected onto the substrate.

According to the conventional semiconductor processing apparatus having the above configuration, the reaction gas is injected into the first buffer portion B1, which is a space formed by the RF electrode 20 and the first shower head 31.

The plasma forming unit 60 is a plasma forming unit of the first buffer unit B1 formed between the RF electrode 20 and the first shower head 31 when power is applied to the RF electrode 20. It is configured to form a plasma only in the (60), the radical which is a part of the plasma state material formed in the plasma forming unit 60 is injected to the substrate 1 through the injection tube (65).

On the other hand, the source gas for the deposition process, etc. is supplied through the source gas supply pipe 52 connected to the second buffer unit B2, which is a space formed by the first shower head 31 and the second shower head 32, The raw material gas supplied to the second buffer portion B2 is injected to the substrate 1 through the second through hole 32b formed in the second shower head 32.

The semiconductor processing apparatus having the above-described configuration can prevent the substrate 1 from being damaged by arc discharge and ion bombardment and ion implantation at the initial stage of plasma generation, thereby preventing yield decrease.

However, the conventional semiconductor processing apparatus having the above configuration has a problem in that the configuration is complicated and the manufacturing cost increases by additionally providing the auxiliary plate 33 for configuring the plasma forming unit 60.

In addition, the conventional semiconductor processing apparatus has a problem that the radicals constituting a part of the plasma formed between the RF electrode and the shower head is lost to reduce the deposition rate and yield of the semiconductor process.

An object of the present invention is to provide a semiconductor processing apparatus having a shower head for generating a plasma that can simplify the structure by integrally forming a spray pipe in which the radical is injected for the semiconductor process and the shower head to solve the above problems To provide.

It is another object of the present invention to provide a semiconductor processing apparatus having a shower head which generates a plasma which can reduce the loss of radicals for a semiconductor process even if the distance between electrodes is narrowed.

The present invention was created in order to achieve the object of the present invention as described above, the present invention is provided in the chamber, a substrate support for supporting a substrate to be installed in the lower side of the chamber to be semiconductor processing, and is installed on the upper side of the chamber An RF electrode, a first shower head which is installed at a predetermined interval below the RF electrode, and a plurality of spray tubes are integrally formed, and is installed at a predetermined distance from the first shower head, and the spray tubes are inserted The paper discloses a semiconductor processing apparatus comprising a second shower head having a first through hole and a plurality of second through holes, wherein a plasma forming unit is formed on the upper side of the injection tubes formed in the first shower head.

The plasma forming unit may include a plurality of recesses formed in an upper surface of the first shower head to correspond to the injection pipes formed in the first shower head. In addition, the plasma forming unit may further include a plurality of recesses formed in the bottom surface of the RF electrode corresponding to the injection pipes formed in the first shower head.

The present invention also provides a chamber, a substrate support installed in the lower side of the chamber to support a substrate to be processed, a first installed on the upper side of the chamber and connected to an RF power source to which power is applied and a plurality of injection tubes are formed. A shower head and a second shower head which is installed at a lower side of the first shower head at predetermined intervals and has a first through hole into which the injection pipes are fitted and a plurality of second through holes, respectively; The bottom surface of the semiconductor processing apparatus is characterized in that the plasma forming portion is formed corresponding to the second through hole of the second shower head.

The plasma forming unit may include a plurality of recesses formed in a bottom surface of the first shower head to correspond to the second through holes of the second shower head. The plasma forming unit may further include a plurality of recesses formed in an upper surface of the second shower head corresponding to the second through holes of the second shower head.

An insulating member may be interposed or coated by an insulating material to electrically insulate the first through hole into which the injection pipes formed in the first shower head are inserted. In addition, the vertical section of the groove portion may be configured such that its width becomes smaller toward the depth direction from the surface on which the groove portion is formed. In addition, the vertical cross section of the groove may have a tapered shape or a curved shape.

Hereinafter, a semiconductor processing apparatus having a shower head generating plasma according to the present invention will be described in detail with reference to embodiments and the accompanying drawings.

The semiconductor processing apparatus according to the first embodiment of the present invention, as shown in Figures 2 to 4a, is provided in the chamber 100, the processing space (S) formed therein open and closed on the bottom of the chamber 100 A substrate support 410 supporting the substrate 1, an RF electrode 200 provided above the chamber 100, and a first shower head provided at a predetermined distance below the RF electrode 200 ( And a second shower head 320 installed at a predetermined distance from the first shower head 310 and 310.

The chamber 100 is a structure that forms a closed space for semiconductor processing of the substrate 1, and may be configured by various shapes and materials, and the chamber main body 110 and the chamber main body in which the exhaust pipe 420 is installed. A sealing member (not shown) may be disposed on the upper portion of the 110 to form an upper plate 120 which is hermetically coupled to the detachable member. Although not shown, the chamber 100 may have an opening for entering and exiting the substrate 1, and the opening may be opened or closed by a gate valve to seal the processing space. The upper plate 120 and the chamber body 110, as shown, is preferably electrically grounded.

The exhaust system installed in the chamber 100 serves to adjust the pressure in the chamber or to exhaust the gases after the semiconductor process to the outside, and a vacuum pump (not shown) installed outside the chamber 100 and a vacuum It consists of an exhaust pipe 420 connected to the pump.

The substrate support 410 is installed on the bottom of the chamber body 110 to support the substrate 1 for semiconductor processing. The substrate support 410 may be provided with a position alignment unit (not shown) for aligning the position of the substrate 1, a temperature control unit (not shown) for uniformizing the temperature distribution of the substrate (1).

The RF electrode 200 is an electrode to which power is applied to form a plasma, and is formed of a plate-like conductive member and is connected to an external power source 550 installed outside the chamber 100. As shown in the drawing, a chamber It is connected by the connecting rod 210 to be connected to the external power source 550 in a state insulated from the upper plate 120 by the 100 and the insulating member 315.

As shown in FIGS. 2 and 4A, the first shower head 310 has an insulating member 315 interposed therebetween to electrically insulate the RF electrode 200 to form the first buffer unit B1. It is provided at a lower side of the RF electrode 200 at a predetermined interval, and has a conductive material to form a plasma only in the plasma forming unit 600 as a plate member having a circular or polygonal shape.

As shown in FIG. 4A, the first shower head 310 is formed by protruding downwardly so that the plurality of spray pipes 650 arranged in a predetermined pattern penetrate the second shower head 320. The 650 are respectively inserted into the first through hole 321 formed in the second shower head 320.

At this time, the first shower head 310 and the RF electrode 200 are installed so as to form an interval such that the reaction gas cannot form a plasma, and the distance between the first shower head 310 and the RF electrode 200 is In general, the plasma reaction does not occur when the pressure is within 10 mm in the low pressure vacuum atmosphere. However, when the pressure is at atmospheric pressure level, the plasma reaction occurs only within a few millimeters of the gap between the first shower head 310 and the RF electrode 200. Therefore, when the pressure increases, the distance between the RF electrode 200 and the first shower head 310 should be reduced by the increase amount.

The first shower head 310 may further include a plasma forming unit 600 to be described later on an upper surface thereof, that is, a surface facing the RF electrode 200, and the plasma forming unit 600 may be a spray pipe 650. Are formed at positions corresponding to the respective ones.

On the other hand, the injection pipe 650 is preferably integrally formed on the first shower head 310 by various processing methods such as mechanical processing. The first shower head 310 is electrically connected to the chamber 100 and grounded.

The second shower head 320 is installed in the chamber 100 at regular intervals from the first shower head 310 to form the second buffer portion B2, and is formed of a plate member having a circular or polygonal shape.

The second shower head 320 has a plurality of first through holes 321 and second through holes 322 in a predetermined pattern. In this case, the first through hole 321 is fitted with the injection pipe 650 formed in the first shower head 310 so that radicals formed in the plasma forming unit 600 are injected into the substrate 1. In FIG. 2 (FIG. 6), reference numeral 325 denotes a lower plate for installing the first shower head 310 and the second shower head 320 in the chamber 100.

Meanwhile, the first buffer part B1 is connected to a reaction gas supply pipe 510 connected to a reaction gas supply device (not shown) so that the reaction gas is supplied. At this time, the connection position and configuration of the reaction gas supply pipe 510 may be variously modified. In addition, a plurality of flow path tubes may be formed inside the RF electrode 200 so that the reaction gas is uniformly supplied into the first buffer unit B1. Here, the reaction gas may be supplied from the upper side or the side of the chamber 100, and the RF electrode 200 may have various shapes and structures according to the supply method of the reaction gas.

The second buffer part B2 is connected to a source gas supply pipe 520 connected to a source gas supply device (not shown) to supply a source gas for semiconductor processing such as deposition and etching. In this case, the connection position of the source gas supply pipe 520 may be modified in various ways similar to the supply method of the constituent reaction gas, and as an example, the source gas supply pipe 520 penetrates the sidewall of the chamber 100 and has a second buffer. It may be connected to the part B2 or may be supplied from the upper side of the chamber 100 similarly to the reaction gas supply pipe 510.

Meanwhile, the plasma forming unit 600 is configured to form a plasma, and may be variously formed. Of course, the plasma may be formed in the entire first buffer unit B1 in addition to the plasma forming unit 600.

In particular, since the ionization degree and electron affinity vary according to the pressure, the type of the reaction gas, and the RF frequency, in order to form the plasma only in the plasma forming unit 600, the RF electrode 200 and the first shower head ( The spacing between the 310 is narrowed to the size at which the plasma is not formed, while the spacing between the RF electrode 200 and the first showerhead 310 in the plasma forming unit 600 has a size at which the plasma can be formed. It must be adjusted.

As shown in FIG. 4A, the plasma forming unit 600 may be formed at an upper portion of the injection pipe 650 formed in the first shower head 310, and the plasma forming unit 600 may be formed in the first shower. It may be composed of a plurality of grooves 611 formed on the upper side of the head 310. The recesses 611 are formed at positions corresponding to the spray pipe 650 of the first shower head 310 so as to be connected to the spray pipe 650 of the first shower head 310.

The vertical cross section of the recess 611 may be formed to be smaller in width toward the depth from the surface where the recess 611 is formed, and may have various shapes such as a tapered shape, a concave curved shape, and a convex curved shape. Can be achieved.

In addition, the plasma forming unit 600 corresponds to the recesses 611 formed in the first shower head 310 in order to smoothly form the plasma and increase the formation density thereof, as shown in FIG. 4B. A plurality of grooves 612 formed at positions corresponding to the grooves 611 formed on the first shower head 310 of the bottom of the RF electrode 200 may be further included to form the grooves 612.

The vertical cross section of the recess 612 formed in the RF electrode 200 is in the depth direction from the surface on which the recess 612 is formed, like the recesses 611 formed in the first shower head 310. The width thereof may be made smaller, and may have various shapes such as a tapered shape, a concave curved shape, and a convex curved shape.

Meanwhile, as illustrated in FIG. 4C, the plasma forming unit 600 may include only the recesses 612 formed in the RF electrode 200 without forming the recesses 611 in the first shower head. In this case, the recesses 612 are formed at positions corresponding to the injection pipe 650 of the first shower head.

In addition, each of the recesses 612 formed in the RF electrode 200 may be connected to flow channels (not shown) for supplying a reaction gas, wherein the first buffer part B1 is formed of a predetermined insulating material. Can be filled.

Meanwhile, the present invention can also be applied to a semiconductor processing apparatus having a configuration in which an RF electrode is replaced with a first shower head.

Hereinafter, a semiconductor processing apparatus according to a second embodiment of the present invention will be described in detail. Here, only portions different from those in the first embodiment are described, and the same components are denoted by the same reference numerals, and description thereof is omitted for convenience.

In the semiconductor processing apparatus according to the second exemplary embodiment of the present invention, as shown in FIGS. 5 and 6A, the first shower is connected to the first shower head 310 by connecting an external RF power source to the first shower head 310 without separately installing an RF electrode. The head 310 is used as an RF electrode, and the connection positions of the reaction gas supply pipe 510 and the source gas supply pipe 520 are configured to be interchanged with each other. The second shower head 320 is used as an electrode to form a plasma together with the first shower head 310, which is an RF electrode, and is made of a metal material to perform a function as an electrode when a power is applied. It is configured to be electrically insulated from the inner wall of (100).

In addition, an insulating member 315 is interposed between the first shower head 310 and the second shower head 320 so as to electrically insulate.

The source gas supply pipe 520 is connected to the first buffer part B1 to be supplied to the first buffer part B1, and the reaction gas supply pipe 510 is connected to the second buffer part B2. That is, the reaction gas supply pipe in the first embodiment is configured to be a source gas supply pipe, and the source gas supply pipe is replaced with a reaction gas supply pipe.

Meanwhile, the plasma forming part 600 should be formed in the second buffer part B2 to which the reaction gas is supplied, and the plasma forming part 600 may be formed in the second through hole 322 formed in the second shower head 320. It may be formed on the upper portion.

That is, the plasma forming unit 600, as shown in Figure 6a, in order to form a plasma smoothly, the second shower head 320 of the bottom of the first shower head 310, which is an RF electrode to form a plasma It may be composed of a plurality of grooves 622 formed at a position corresponding to the second through hole 322 formed in the.

In addition, as shown in FIG. 6B, the plasma forming unit 600 is connected to the second through hole 322 of the second shower head 320 and the second shower head 320 as shown in FIG. 6B. It may be configured to further include a plurality of grooves 621 formed on the upper side of the.

The vertical cross-sections of the grooves 621 and 622 are formed to have a smaller width from the surface on which the grooves 621 and 622 are formed in the depth direction, and are tapered, concave, and convex. Various shapes can be achieved.

Meanwhile, in the second embodiment of the present invention, since the first shower head 310 is used as the RF electrode, the injection pipe 650 for injecting the raw material gas into the processing space S is formed with the first shower head 310. Since the first shower head 310 and the second shower head is electrically inserted into the first through hole 321, the insulating member 323 is preferably interposed.

The semiconductor processing apparatus according to the present invention has the advantage of simplifying the structure by forming the plasma forming unit integrally with the shower head and forming the plasma only in the plasma forming unit.

The semiconductor processing apparatus according to the present invention has an effect of improving a deposition rate and a yield by minimizing plasma loss by adjusting a distance between an electrode and a shower head to form a dark sheath and forming a plasma in a plasma forming unit. There is.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention.

Claims (10)

A chamber, a substrate support installed at a lower side of the chamber to support a substrate to be processed semiconductor, an RF electrode installed at an upper side of the chamber, and a plurality of injection tubes disposed at predetermined intervals below the RF electrode. A first shower head which is formed integrally with the first shower head, and a second shower head provided with a plurality of second through holes and a first through hole into which the injection pipes are fitted, respectively, and installed at a predetermined distance from the first shower head, Plasma forming portions are formed above the injection tubes formed in the first shower head, The first shower head includes a plate member, The plurality of injection pipes are arranged in a predetermined pattern on the plate member, protrudes to the lower side of the plate member is formed integrally with the plate member, The plurality of injection pipes are inserted into the first through hole formed in the second shower head, And radicals formed in the plasma forming unit are injected to the substrate supported on the substrate support through the injection tube. The method according to claim 1, And the plasma forming unit includes a plurality of first recesses formed on an upper surface of the first shower head to correspond to the injection pipes formed in the first shower head. The method according to claim 2, And the plasma forming unit further comprises a plurality of second recesses formed on a bottom surface of the RF electrode corresponding to the injection tubes formed in the first shower head. The method according to claim 1, And the plasma forming unit includes a plurality of second recesses formed in a bottom surface of the RF electrode corresponding to the injection tubes formed in the first shower head. A chamber, a substrate support installed at a lower side of the chamber to support a substrate to be processed, a first shower head installed at an upper side of the chamber, connected to an RF power, and supplied with power, and having a plurality of injection pipes; A second shower head installed below the first shower head at a predetermined interval and having a first through hole and a plurality of second through holes through which the injection pipes are fitted; A plasma forming part is formed on a bottom of the first shower head to correspond to the second through hole of the second shower head. The plasma forming unit includes a plurality of first recesses formed in a bottom surface of the first shower head corresponding to the second through holes of the second shower head. And the plasma forming unit forms a gap in which a plasma can be formed on an upper surface of the second shower head and an upper portion of the second through hole. delete The method of claim 5, And the plasma forming unit further comprises a plurality of third recesses formed in an upper surface of the second shower head corresponding to the second through holes of the second shower head. The method of claim 5, And an insulating member interposed therebetween or coated with an insulating material to electrically insulate the first through hole into which the injection pipes formed in the first shower head are inserted. The method according to any one of claims 2 to 4, 5 and 7 to 8, And the vertical section of the first recess is smaller in width from the surface on which the first recess is formed toward the depth thereof. The method according to any one of claims 2 to 4, 5 and 7 to 8, And a vertical section of the first recessed portion is tapered or curved.

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