KR100903306B1 - Vaccum processing apparatus - Google Patents

Abstract

A vacuum processing device is provided to prevent an edge effect in a vertex of a substrate by extending the vertex of a substrate supporting surface to an inner wall of a vacuum chamber. A vacuum processing device includes a vacuum chamber and a rectangular substrate support. An electrostatic chuck is installed in an upper part of the substrate support. A shield member(260) closes an edge of the electrostatic chuck. A vertex of a substrate support surface is formed by the electrostatic chuck and the shield member. The vertex of the substrate support surface is extended to the inner wall of the vacuum chamber by a support surface extending unit(240).

Description

Vacuum processing apparatus

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum processing apparatus, and more particularly, to a vacuum processing apparatus for performing vacuum processing such as etching and deposition on a substrate such as glass for an LCD panel.

The vacuum processing apparatus is a device that performs a vacuum processing process such as depositing and etching a surface of a substrate seated on a substrate support by applying power from a vacuum chamber forming a processing space to form a plasma in the processing space. Say.

Figure 1a is a cross-sectional view showing a conventional vacuum processing apparatus, Figure 1b is a longitudinal sectional view showing the vacuum processing apparatus of Figure 1a.

In the conventional vacuum processing apparatus, in order to process a rectangular substrate 1 such as an LCD panel glass, a horizontal cross-sectional shape of the vacuum chamber 10 and the substrate support 14 is also rectangular in correspondence with the shape of the substrate 1.

Figure 2a is a graph showing the ion density of the vacuum processing apparatus of Figure 1, Figure 2b is a graph showing the etching rate of the vacuum processing apparatus of FIG.

On the other hand, when the frequency and power of the power applied according to the process are high, such as a process of depositing or etching a metal layer on the surface of the substrate (metal process), the plasma density is remarkably increased at the position corresponding to the vertex, which impairs the uniformity of the process. There is a problem that a so-called edge effect occurs.

More specifically, as shown in FIG. 2A, a corner, that is, a vertex, under a condition in which a power source having a frequency of 60 MHz and a power of 265 W is applied to a lower electrode installed in the substrate support 14 and the vacuum chamber 10 is grounded. It is known that ion flux is significantly increased at locations corresponding to (see A. Perret , P. Chabert et al., " Ion flux uniformity in large area high frequency capacitive discharges ").

In addition, Figure 2b showing the simulation results of the etching rate under the similar conditions to Figure 2a also shows that the etch rate is significantly high at the vertex.

However, as described above, when the plasma density is high near the vertex due to the edge effect, especially when a high power is applied in a metal process or a process of processing a large-area substrate, the uniformity of deposition or etching near the vertex of the substrate is inhibited. There is a problem that needs to be improved.

An object of the present invention is to provide a vacuum processing apparatus having a configuration that can recognize the above problems and needs, and can improve the edge effect.

The present invention was created to achieve the object of the present invention as described above, the present invention comprises a vacuum chamber for forming a closed processing space; And a substrate support installed in the vacuum chamber, wherein the substrate support includes a support surface extension for extending a vertex of a rectangular substrate support surface supporting the substrate toward an inner wall of the vacuum chamber. To present.

The support surface extension part is installed on one side or both sides engaged with each other with respect to the vertex of the substrate support surface, or the support surface extension portion is a vertex of the substrate support surface in the diagonal direction of the substrate support surface toward the inner wall of the vacuum chamber The extending surface may be formed, or the support surface extension part may be formed by extending part or all of the sides of the substrate support surface toward the inner wall of the vacuum chamber so that the vertex of the substrate support surface is included.

The invention also provides a vacuum chamber for forming a closed processing space; And a substrate support installed in the vacuum chamber, wherein the substrate support extends toward the inner wall of the vacuum chamber, in which part or all of the sides of the substrate support surface are included so as to include a vertex of a rectangular substrate support surface for supporting the substrate. It presents a vacuum processing apparatus, characterized in that formed.

The support surface extension may be installed on a shield member covering the edge of the electrostatic chuck supporting the substrate, and the upper surface of the shield member may be formed at or below the upper surface of the dam formed at the edge of the electrostatic chuck.

The support surface extension may be installed as one or more members integrally or separated from the shield member.

The support surface extension portion includes a first ground surface extension portion installed on the substrate support, and a second ground surface extension coupled to the first ground surface extension portion to form a top surface including an original vertex of the ground surface of the substrate. It may be configured to include a part.

Each side of the support surface extension may have a concave structure in a portion other than a vertex, and the first and second ground extension portions may have a straight line with the original vertex of the substrate support surface. It may be formed so as not to achieve.

Wherein the first ground extending portion is made up of a plate which is installed to a position passing one end of the original vertex while abutting on one side of the substrate ground, the second ground extending portion is formed so that the overall shape 'L' shape It may be installed to be in contact with the other side of the substrate support surface with the original vertex interposed therebetween and may be configured to be in contact with one end of the first support surface extension at one end.

The other end of the support surface extension portion opposite to the original vertex may be oblique or curved toward at least a portion toward the substrate to mitigate a sudden change in the plasma density as the substrate support surface is extended.

The support surface extension portion may be detachably coupled to the substrate support.

The support surface extension may have a dielectric or metal material.

The support surface extension may form part of the baffle.

The substrate support may be provided with a ground electrode or a lower electrode to which at least one RF power is applied.

The vacuum processing apparatus according to the present invention extends the vertex of the substrate support surface supporting the substrate from the substrate support toward the inner wall of the vacuum chamber, thereby preventing the edge effect from occurring at the vertex of the substrate, thereby improving the uniformity of the etching rate or the deposition rate of the substrate. There is an advantage that can be improved.

In particular, the vacuum processing apparatus according to the present invention is to make the vertex of the substrate support surface supporting the substrate in the substrate support further away from the vertex of the substrate to mitigate the edge effect to make the etching rate or deposition rate of the entire substrate uniform.

In addition, in the vacuum processing apparatus according to the present invention, the edge effect is generated at the vertex of the substrate by a simple configuration of adding a support surface extension extending from the vertex of the substrate support surface toward the inner wall of the vacuum chamber in the conventional vacuum processing apparatus. There is an advantage to improve the uniformity of the etching rate or deposition rate for the substrate.

In addition, the vacuum processing apparatus according to the present invention has the advantage that it can cope with a variety of process conditions by a simple structure change according to the process by detachably installing the substrate support in the configuration of the conventional vacuum processing apparatus.

Hereinafter, a vacuum processing apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

Figure 3a is a cross-sectional view showing a vacuum processing apparatus according to the present invention, Figure 3b is a longitudinal sectional view showing a vacuum processing apparatus of Figure 3a, Figure 4 is a graph showing the etching rate of the vacuum processing apparatus of Figure 3a.

Vacuum processing apparatus according to the present invention, as shown in Figure 3a and 3b, the vacuum chamber 100 to form a closed processing space; It is configured to include a substrate support 140 is installed in the vacuum chamber.

The substrate 1 to be subjected to vacuum treatment may be any object that requires vacuum treatment such as etching or deposition on not only a semiconductor wafer but also a glass substrate for an LCD panel and a surface. In particular, the object of the vacuum processing apparatus according to the present invention is preferably a glass substrate for an LCD panel, particularly a rectangular substrate, but is not limited thereto.

The vacuum processing apparatus according to the present invention performs a predetermined vacuum treatment such as an etching apparatus for etching a thin film formed on the surface of the substrate 1, a deposition apparatus for forming a thin film on the surface of the substrate 1, or performs both etching and deposition. It can be configured to perform.

The vacuum chamber 100 may be manufactured to have a variety of shapes and structures according to the design conditions and designs, the upper housing 110 and the lower housing 120-or upper coupled to each other to form a processing space (S) It may be configured to include a lead. At this time, a gate 150 for entering and exiting the substrate is formed on the side of the vacuum chamber 100.

The vacuum chamber 100 may include a gas supply unit (not shown) for supplying gas into the processing space (S), a pressure control (vacuum pressure), and an exhaust port (not shown) connected to an exhaust system (not shown) for exhausting. This can be installed.

The gas supply part may be configured in various ways according to the gas supply type, and as shown in FIG. 3B, the gas supply part may include a shower head 230 connected to the gas supply device.

In addition, the vacuum chamber 100 may be provided with a power applying unit (not shown) for plasma formation. The power applying unit may be configured in various ways according to a power applying method, and as shown in FIG. 3B, the upper electrode configured by grounding the shower head 230 and the vacuum chamber 100 and the substrate support 140 to be described later. The lower electrode may be installed and applied with RF power.

The substrate support 140 is a configuration for supporting the substrate 1 and may be supported by a plurality of flanges and installed in the vacuum chamber 100. In addition, the substrate support 140 may be provided with an electrostatic chuck 220 for fixing the substrate 1 by the electrostatic force on the upper side thereof.

The substrate support 140 may be variously configured according to the vacuum processing process characteristics and design conditions, and the lower electrode is generally installed.

For example, the substrate support 140 may include a base plate 141 formed on a bottom surface of the vacuum chamber 100 and an insulating member 142 installed on the base plate 141; A heat transfer member 143 installed on the insulation member 142 and provided with a power supply and a flow path through which the heat transfer medium flows; It is installed on the heat transfer member 143 may be configured to include an electrostatic chuck 220 for adsorbing and fixing the substrate by the electrostatic force.

In this case, the power applying unit applies one or more RF power to the upper electrode formed by grounding the vacuum chamber 100 and the shower head 230, and the base material 221 constituting a part of the heat transfer member 143 and the electrostatic chuck 220. It may be composed of a lower electrode. In this case, the upper electrode and the lower electrode are not limited thereto, and may be variously modified according to process conditions and design conditions.

The base plate 141 is installed to block the transfer to the vacuum chamber 100 when the lower electrode is installed on the substrate support 140, and is generally grounded in the same manner as the vacuum chamber 100.

The insulating member 142 is configured to electrically insulate the base plate 141, and an insulating material such as Teflon is used.

The heat transfer member 143 is configured to cool or heat the substrate 1 supported by the process conditions by forming a flow path through which a heat transfer medium flows. A metal material having a flow path formed therein is used.

The electrostatic chuck 220 is configured to suck and fix the substrate 1 by electrostatic force in a vacuum state, a metal base material 221, an insulating layer 222 formed on the base material 221, and The electrode layer 223 formed on the insulating layer 222 and the dielectric layer 224 formed on the electrode layer 223 and supporting the substrate 1 may be formed.

In the electrostatic chuck 220, that is, the dielectric layer 224, a plurality of protrusions 224b may be formed on a surface supporting the substrate 1, and a dam 224a may be formed at an edge thereof.

On the other hand, the edge of the electrostatic chuck 220 is covered by the shield member 260 to protect from the plasma. In this case, the side surface of the substrate support 140 may be covered by the side shield member 250.

The shield member 260 and the side shield member 250 have a ceramic material as a structure for protecting the electrostatic chuck 220 and the members provided below the shield from the plasma.

Meanwhile, the shield member 260 constitutes a part of the substrate support surface of the substrate support 140 supporting the substrate 1, and as shown in FIG. 3B, a dam having an upper surface formed at an edge of the electrostatic chuck 220. It is formed equal to or lower than the upper surface of 224a.

On the other hand, the substrate support 140, in order to eliminate the edge effect of the vacuum processing process, as shown in Figure 3a, the vacuum chamber 100 to the vertex (O ₁ ) of the rectangular substrate support surface supporting the substrate ₁ It characterized in that it comprises a support surface extending portion 240 extending to the inner wall side (O ₂ ).

The support surface extending portion 240 to the plasma density at the apex (O ₁₎ of the substrate holding surface of the substrate support 140 by the edge effect, consider the increases in the vertex of the vertex (O ₁₎ of the substrate (1) It has been conceived that extending to a farther position O ₂ can mitigate the edge effect at the vertex of the substrate 1.

Therefore, the structure of the support surface extension part 240 according to the present invention is any configuration that can extend the vertex (O ₁ ) of the substrate support surface of the substrate support 140 more toward the inner wall of the vacuum chamber 100 than in the prior art It will be possible.

The support surface extension 240 as described above may have various configurations, and may be installed on one side or both sides engaged with each other based on the vertex O ₂ of the substrate support surface.

In addition, the support surface extending portion 240 is more preferably formed to extend toward the inner wall of the substrate support surface apex (O ₂₎ of the substrate in a diagonal direction of the support surface a vacuum chamber 100 as shown in Figure 3a Do.

Meanwhile, the support surface extension part 240 may be formed by extending part or all of each side of the substrate support surface toward the inner wall of the vacuum chamber 100 such that the vertex O _{2 of the} substrate support surface is included. At this time, the support surface extending portion 240, as its purpose is to consider that to mitigate edge effects shown in Figures 3a, rather than extending all gakbyeon of the substrate support surface, the vertex of the substrate support surface (O ₂₎ to As a reference, only a portion of both sides engaged with each other from the vertex O ₂ of the substrate support surface extends toward the inner wall of the vacuum chamber 100, that is, each side of the substrate support surface preferably has a concave structure in a portion excluding the vertex. Do.

Meanwhile, the support surface extension part 240 may be installed integrally with or separately from the shield member 260. At this time, the support surface extension 240 is preferably detachably installed as a separate member to be optimized in each process condition, such as replacement or separation bar design conditions can vary depending on the process conditions.

In this case, when the support surface extension part 240 is configured as a separate member, one or more members may be assembled and combined. For example, the support surface extension portion 240 is coupled to the first ground surface extension portion 241 and the first ground surface extension portion 241 to include an original vertex O ₁ of the substrate ground surface. It may be configured to include a second support surface extension portion 242 to form an upper surface.

On the other hand, the first ground extension 241 and the second ground extension 242 is a straight line and the original vertex (O ₁ ) of the substrate support surface, such as a combination of a straight line having a step, the curve is combined It may be formed so as not to achieve.

For example, as illustrated in FIG. 3A, the first supporting ground extension part 241 is a rectangular plate having one end installed to a position passing through the original vertex O ₁ while contacting one side of the substrate supporting ground. The second support surface extension portion 242 is installed while contacting the other side of the substrate support surface between the original vertex (O ₁ ) so that the overall shape to form an 'L' shape and at _one end It may be configured to abut one end of the first ground extending portion 241.

At this time, the first ground extending portion 241 and the second ground extending portion 242, the other end opposite to the original vertex (O ₁ ) to mitigate a sudden change in the plasma density in accordance with the extension of the substrate support ground It is preferred that at least a portion is oblique or curved towards the substrate.

Meanwhile, the support surface extension part 240 is preferably a dielectric such as a ceramic material in consideration of plasma formation, but is not limited thereto, and may have a metal material such as aluminum or an aluminum alloy. At this time, the aluminum or aluminum alloy may be formed of a coating layer including any one of W, Ni, W-N, Cr and Mo in order to anodize the surface or to improve the resistance to the plasma.

On the other hand, the support surface extension unit 240 as described above has been described as an integral part of the shield member 260 or a separate member, but in order to adjust the displacement in the processing space (S), the substrate support 140 and the vacuum chamber ( Part of the baffle (not shown) provided between the 100 may be configured.

When the support surface extension portion 240 constitutes a part of the baffle, all of the upper surface of the baffle is configured to have the same height as the upper surface of the shield member 260, or a portion of the upper surface of the baffle is a vertex of the shield member 260, That is, it is preferably configured to form an 'L' shape to include the vertex (O ₁ ) of the substrate support surface.

On the other hand, when the vacuum processing apparatus according to the present invention has the above-described support surface extension portion 240, the above-described configuration, in particular in the configuration shown in Figure 3a, as shown in Figure 4, the substrate support 140 It can be seen that the high etch rate near the vertex is reduced.

In particular, as can be seen by comparing the graph of FIG. 4 with the graph of FIG. 2B, as the high etching rate is reduced near the vertex of the substrate support 140, the etching rate becomes more uniform as a whole.

Therefore, it can be seen that the vacuum treatment apparatus according to the present invention, in which the support surface extension 240 is installed as described above, significantly alleviates the edge effect. Here, the support surface extension 240 is preferably treated with diagonal lines or curves at all angles, including corners, where arcing may occur when sharp edges are present.

On the other hand, the vacuum processing apparatus according to the present invention has been described mainly for reducing the edge effect by changing the shape of the substrate support surface in the external shape of the substrate support 140, but installed in the substrate support 140 to mitigate the edge effect It is also conceivable to form the lower electrode to have the same shape as the support surface extension as described above.

Since the above has been described only with respect to some of the preferred embodiments that can be implemented by the present invention, the scope of the present invention, as is well known, should not be construed as limited to the above embodiments, the present invention described above It will be said that both the technical idea and the technical idea which together with the base are included in the scope of the present invention.

Figure 1a is a cross-sectional view showing a conventional vacuum processing apparatus.

FIG. 1B is a longitudinal sectional view showing the vacuum processing apparatus of FIG. 1A.

Figure 2a is a graph showing the ion density of the vacuum processing apparatus of Figure 1, Figure 2b is a graph showing the etching rate of the vacuum processing apparatus of FIG.

Figure 3a is a cross-sectional view showing a vacuum processing apparatus according to the present invention.

3B is a longitudinal sectional view showing the vacuum processing apparatus of FIG. 3A.

4 is a graph showing an etching rate of the vacuum processing apparatus of FIG. 3A.

****** Explanation of symbols for main parts of drawing *****

1 substrate 100 vacuum processing apparatus

140: substrate support

240: support surface extension

241 First Ground Extension 242: Second Ground Extension

260: shield member

Claims (16)

A vacuum chamber forming a closed processing space; A rectangular substrate support installed in the vacuum chamber and supporting the substrate, The substrate support includes an electrostatic chuck installed on an upper surface thereof, and a shield member covering an edge of the electrostatic chuck, The vertex of the substrate support surface formed by the electrostatic chuck and the shield member is further extended to the inner wall of the vacuum chamber by a support surface extension. The method according to claim 1, The support surface extension unit is a vacuum processing apparatus, characterized in that installed on one side or both sides engaged with each other on the basis of the vertex of the substrate support surface. The method according to claim 1, And the support surface extending portion is formed by extending a vertex of the substrate support surface toward an inner wall of the vacuum chamber in a diagonal direction of the substrate support surface. The method according to claim 1, And the support surface extension portion is formed by extending part or all of the sides of the substrate support surface toward an inner wall of the vacuum chamber so that a vertex of the substrate support surface is included. A vacuum chamber forming a closed processing space; A rectangular substrate support installed in the vacuum chamber and supporting the substrate, The substrate support includes an electrostatic chuck installed on an upper surface thereof, and a shield member covering an edge of the electrostatic chuck, Some or all of the sides of the substrate support surface extend further toward the inner wall of the vacuum chamber by the support surface extension so that the vertex of the substrate support surface formed by the electrostatic chuck and the shield member extends toward the inner wall of the vacuum chamber. Vacuum processing apparatus characterized in that. The method according to any one of claims 1 to 5, The support surface extending portion is a vacuum processing apparatus, characterized in that installed on the shield member. The method according to claim 6, The upper surface of the shield member is formed of the same or lower than the upper surface of the dam formed on the edge of the electrostatic chuck vacuum processing apparatus. The method according to claim 6, The support surface extending portion is a vacuum processing apparatus, characterized in that provided with one or more members integrally or separated from the shield member. The method according to claim 5, The support surface extension portion includes a first ground surface extension portion installed on the substrate support, and a second ground surface extension coupled to the first ground surface extension portion to form a top surface including an original vertex of the ground surface of the substrate. Vacuum processing apparatus comprising a portion. The method according to claim 9, Wherein the first ground extending portion is made up of a plate which is installed to a position passing one end of the original vertex while abutting on one side of the substrate ground, the second ground extending portion is formed so that the overall shape 'L' shape Originally installed while contacting the other side of the substrate supporting the ground between the vertex, and at one end of the vacuum processing apparatus, characterized in that configured to abut one end of the first extension portion. The method according to any one of claims 1 to 5 and 9 to 10, Each side of the support surface extending portion has a structure which is recessed in a portion except for the vertex. The method according to any one of claims 1 to 5 and 9 to 10, The support surface extending portion is vacuum processing apparatus, characterized in that the other end opposite to the original vertex is at least partially oblique or curved toward the substrate to mitigate a sudden change in the plasma density as the substrate support surface is extended. The method according to any one of claims 1 to 5 and 9 to 10, The support surface extending portion is a vacuum processing apparatus, characterized in that detachably coupled to the substrate support. The method according to any one of claims 1 to 5 and 9 to 10, The support surface extending portion is a vacuum processing apparatus, characterized in that having a dielectric or metal material. The method according to any one of claims 1 to 5 and 9 to 10, And a lower electrode to which the substrate support is grounded or to which at least one RF power is applied. The method according to any one of claims 1 to 5, And said support surface extending portion constitutes part of a baffle.

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