KR20160058552A - Solar cells and manufacturing method for the same - Google Patents
Solar cells and manufacturing method for the same Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims abstract description 38
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 150000001875 compounds Chemical class 0.000 claims abstract description 3
- 230000010287 polarization Effects 0.000 claims description 63
- 239000004020 conductor Substances 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 10
- 230000031700 light absorption Effects 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 238000005118 spray pyrolysis Methods 0.000 claims description 3
- 229910021480 group 4 element Inorganic materials 0.000 claims description 2
- 229910021476 group 6 element Inorganic materials 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 238000001771 vacuum deposition Methods 0.000 claims description 2
- 239000010703 silicon Substances 0.000 abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 17
- 230000005641 tunneling Effects 0.000 abstract description 5
- 239000002131 composite material Substances 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 description 13
- 150000002500 ions Chemical class 0.000 description 10
- 238000005215 recombination Methods 0.000 description 9
- 230000006798 recombination Effects 0.000 description 9
- 230000005684 electric field Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- -1 ITO Substances 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011263 electroactive material Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
Description
본 발명은 태양전지 및 그 제조방법에 관한 것으로, 더욱 상세하게는 상호 대향되게 배치되는 두 전극 사이에 광흡수층을 포함하고, 상기 전극과 광흡수층에 인접하여 설치된 전기분극물질을 포함하여 이루어지는 분극성 터널 접합을 형성하여 태양전지의 광전 변환 효율을 향상시킨 태양전지의 구조 및 그 제조방법에 관한 것이다.The present invention relates to a solar cell and a method of manufacturing the same. More particularly, the present invention relates to a solar cell and a method of manufacturing the same. More particularly, the present invention relates to a solar cell and a method of manufacturing the same, To a structure of a solar cell in which a photoelectric conversion efficiency of a solar cell is improved by forming a tunnel junction, and a manufacturing method thereof.
실리콘 태양전지는 현재 가장 큰 시장점유율을 보이고 있는 단결정 및 다결정을 포함하는 결정질 태양전지 기술로서, 고효율과 저가로 제조할 수 있는 기술 개발이 이루어지고 있다.Silicon solar cell is a crystalline solar cell technology including monocrystalline and polycrystalline which shows the largest market share at present, and technology which can manufacture with high efficiency and low price is being developed.
지난 20년 동안 가장 전세계에서 효율이 우수한 실리콘 태양전지는 호주의 뉴사우스웨일즈대학(University of New South Wales)에서 개발한 PERL(Passivated Emitter Rear Locally Diffused) 구조를 이용하는 셀로서 효율이 25%이었으나, 2014년 4월 IEEE Photovoltaic Specialists Conference에서 파나소닉(Panasonic)사는 새로운 구조를 채택하여 25.6%를 실현하였다. The most efficient silicon solar cell in the world over the last 20 years was a 25% efficiency cell using a Passive Emitter Rear Locally Diffused (PERL) structure developed by the University of New South Wales, Australia, At the IEEE Photovoltaic Specialists Conference in April, Panasonic adopted a new structure, achieving 25.6%.
이 태양전지는 유입되는 태양광의 일부를 막는 전면의 접합부(Front Contact)를 변경하여, 양극 접합부 및 음극 접합부 모두 후면에 위치한다. 그밖에, 결정 실리콘 웨이퍼에 고품질의 비정질 실리콘막을 형성하여 웨이퍼 표면에의 손상을 억제함으로써 전, 후면에서 캐리어의 재결합 발생을 최소화하여 25%의 효율 벽을 넘는 25.6%의 효율을 달성하였다.This solar cell changes the front contact that blocks a part of the incoming solar light, and is located on the rear surface of both the anode junction and the cathode junction. In addition, a high-quality amorphous silicon film was formed on the crystalline silicon wafer to suppress damage to the wafer surface, thereby minimizing the occurrence of carrier recombination on both the front and rear sides, achieving an efficiency of 25.6% over an efficiency wall of 25%.
그러나, 이러한 효율 기록 갱신과 관련한 모든 태양전지의 설계는 고품질 실리콘 결정을 사용해야 한다는 단점을 갖고 있으며, 지상용 단일 접합 태양전지의 이론 효율인 약 30%에 미치지 못하는 있는 상황이다.However, all the solar cell designs related to such efficiency record updating have a disadvantage of using high-quality silicon crystals, which is less than about 30% of the theoretical efficiency of a single-junction solar cell for ground use.
한편, 박막 태양전지 기술은 현재 가장 큰 시장점유율을 보이고 있는 결정질 Si 태양전지와 비교되는 차세대 태양전지 기술로서, 박막 태양전지는 결정질 Si 태양전지보다 효율을 높일 수 있으면서도 저가로 제조할 수 있어 주목받고 있는 태양전지이며, 대표적으로 CIGS(Cu(In, Ga)Se2) 태양전지가 있다.Thin film solar cell technology is next generation solar cell technology compared to crystalline Si solar cell, which has the biggest market share at present. Thin film solar cell can be manufactured at a lower cost than the crystalline Si solar cell, but can be manufactured at a low cost (Cu (In, Ga) Se 2 ) solar cell.
이러한 박막 태양전지의 경우, 효율을 보다 향상시키기 위하여, 압전소자(piezoelectric device)와 같은 타소자와의 융합을 통한 방법이 제안되고 있다.In the case of such a thin film solar cell, in order to further improve the efficiency, a method through fusion with other devices such as a piezoelectric device has been proposed.
예를 들어, Wang 등에 의한 특허문헌 1에는 하이브리드 태양광 발전기(hybrid solar nanogenerator)에 있어서, 염료태양전지(dye-sensitized solar cell)의 전극에 직렬 또는 병렬로 ZnO 나노선(nanowire)을 이용한 압전 나노발전소자(piezoelectric nanogenerator)를 설치하여 기계적 진동에 의해 생성된 전하를 수집하여 광전류와 함께 발전량에 기여하도록 함으로써 효율을 개선하도록 하는 방법이 제시되어 있다. 그런데, 하기 특허문헌 1에 개시된 기술은 기계적 진동을 발생시키기 위한 에너지와 장치가 부수적으로 필요하므로 경제성이 떨어지는 단점이 있다.For example, Patent Document 1 by Wang et al. Discloses a hybrid solar nanogenerator that uses a ZnO nanowire in series or in parallel with an electrode of a dye-sensitized solar cell, A method is proposed in which a piezoelectric nanogenerator is installed to collect electric charges generated by mechanical vibration and contribute to the amount of generated electricity together with the photocurrent, thereby improving the efficiency. However, the technique disclosed in Patent Document 1 has a disadvantage in that it is economically disadvantageous because energy and apparatus for generating mechanical vibration are incidentally required.
또한, 특허문헌 2에는, 전기장 향상 효과에 의하여 개선된 광전환 효율을 나타낼 수 있는 태양전지 기술이 개시되어 있는데, 이 기술은 박막 태양전지의 전극에 전계 방출 효과를 갖는 나노막대, 나노선 또는 나노튜브 등의 형태를 갖는 나노구조물을 포함하는 전계방출층을 설치하여 빛에 의하여 광활성층으로부터 발생된 전자와 정공을 각 전극으로 효과적으로 전달시킴으로써 태양전지의 광전변환효율을 향상시키기 위한 것이나, 실제 다양한 박막 태양전지에 적용한 결과, 효율 개선 효과는 미미한 반면, 나노구조물의 제작에 소요되는 공정비용이 증가하여, 특허문헌 1에 개시된 기술과 마찬가지로 경제성이 떨어지는 문제점이 있다.Patent Document 2 discloses a solar cell technology capable of exhibiting light conversion efficiency improved by an electric field enhancement effect. This technology is applied to a thin film solar cell having a nanorod, a nanowire or a nano- A field emission layer including a nanostructure having a shape of a tube or the like is provided for effectively transferring electrons and holes generated from the photoactive layer to each electrode by light to improve the photoelectric conversion efficiency of the solar cell, As a result of the application to the solar cell, the efficiency improvement effect is insignificant, but the process cost required for fabricating the nanostructure increases, and the economical efficiency is inferior to the technology disclosed in Patent Document 1.
본 발명의 목적은 전극이나 광흡수층에 인접하여 전기분극물질을 포함하는 분극성 터널접합(PTJ: Polarized Tunneling Junction) 구조를 통해 내장전계(built-in electric field)를 형성함으로써, 광흡수에 의해 반도체 내에서 생성된 전자와 정공의 재결합(recombination)을 감소시키는 동시에 전극에의 수집(collection) 효율을 개선하여, 효율을 증대시킬 수 있는 태양전지의 구조와 제조방법을 제공하는 것이다.SUMMARY OF THE INVENTION An object of the present invention is to provide a method of forming a built-in electric field through a Polarized Tunneling Junction (PTJ) structure including an electro-polarizing material adjacent to an electrode or a light absorbing layer, The present invention provides a structure and a manufacturing method of a solar cell capable of reducing the recombination of electrons and holes generated in the anode and improving the efficiency of collection to the electrode, thereby increasing the efficiency.
또한, 본 발명의 다른 목적은 기존의 재결합 방지층을 분극성 터널 접합으로 대체한 태양전지 및 이의 제조방법을 제공하는 것이다.Another object of the present invention is to provide a solar cell in which a conventional recombination preventing layer is replaced by a polarized tunnel junction, and a manufacturing method thereof.
상기 목적을 달성하기 위한 본 발명의 제1측면은, 분극성 터널 접합을 포함하여 이루어진 태양전지로, 상호 대향되게 배치되는 두 전극 사이에 광흡수층을 포함하고, 상기 전극과 광흡수층 사이에 전기분극물질을 형성하여 이루어진 분극성 터널 접합을 포함하여 이루어진 태양전지를 제공하는 것이다.According to a first aspect of the present invention, there is provided a solar cell comprising a polarized tunnel junction, including a light absorbing layer between two electrodes disposed opposite to each other, The present invention provides a solar cell comprising a polarized tunnel junction formed by forming a material.
본 발명에 따른 태양전지에 있어서, 상기 전기분극물질은, I족, IV족, 및 VI족 원소를 포함하는 화합물, 또는 II족, IV족, 및 VI족 원소를 포함하는 화합물 중의 하나 이상을 포함할 수 있다.In the solar cell according to the present invention, the electro-polarizing material includes at least one of a compound containing Group I, Group IV, and Group VI elements, or a Group II, IV, and VI group element can do.
본 발명에 따른 태양전지에 있어서, 상기 전기분극물질은, Ti 또는 Si 중 하나 이상을 포함하는 산화물로 이루어질 수 있다.In the solar cell according to the present invention, the electro-polarizing material may be composed of an oxide containing at least one of Ti and Si.
본 발명에 따른 태양전지에 있어서, 상기 전기분극물질은, MgxSiyOz, FexSiyOz, CuxTiyOz, CuxSiyOz (여기서, x, y, z는 임의의 양수) 중에서 선택된 1종 이상을 포함할 수 있다.In the solar cell according to the present invention, the electro-polarizing material may include Mg x Si y O z , Fe x Si y O z , Cu x Ti y O z , Cu x Si y O z (where x, y, z May include at least one member selected from the group consisting of (a) and (b).
본 발명에 따른 태양전지에 있어서, 상기 광흡수층 물질은 Si일 수 있다.In the solar cell according to the present invention, the light absorbing layer material may be Si.
본 발명에 따른 태양전지에 있어서, 상기 광흡수층 물질은, 비정질 Si, 다결정 Si 또는 단결정 Si 중의 하나 이상을 포함할 수 있다.In the solar cell according to the present invention, the light absorbing layer material may include at least one of amorphous Si, polycrystalline Si, or monocrystalline Si.
상기 목적을 달성하기 위한 본 발명의 제2측면은, 광흡수층과 전도성 물질층을 포함하는 태양전지의 제조방법으로, 상기 광흡수층과 전도성 물질층 사이에 전기분극물질층을 형성하는 단계를 포함하고, 상기 광흡수층과 전도성 물질층과 전기분극물질층이 분극성 터널 접합을 형성하는 태양전지의 제조방법을 제공하는 것이다.According to a second aspect of the present invention, there is provided a method of manufacturing a solar cell including a light absorbing layer and a conductive material layer, the method comprising forming an electro-polarizing material layer between the light absorbing layer and the conductive material layer And a method of manufacturing a solar cell in which the light absorbing layer, the conductive material layer, and the electric polarization material layer form a polarized tunnel junction.
본 발명에 따른 태양전지의 제조방법에 있어서, 상기 광흡수층상에 텍스처를 형성하는 단계; 상기 텍스처 상에 전기분극물질층을 형성하는 단계; 상기 전기분극물질층 상에 전도성 물질층을 형성하는 단계;를 포함할 수 있다.In the method of manufacturing a solar cell according to the present invention, a step of forming a texture on the light absorbing layer; Forming an electro-polar material layer on the texture; And forming a layer of conductive material on the layer of electrically polarizing material.
본 발명에 따른 태양전지의 제조방법에 있어서, 상기 전기분극물질층을, 진공증착법, 전기도금법, 잉크 프린팅법, 스프레이 열분해법 중에서 선택된 하나 이상의 방법으로 형성할 수 있다.In the method for manufacturing a solar cell according to the present invention, the electrically polarizing material layer may be formed by one or more methods selected from a vacuum deposition method, an electroplating method, an ink printing method, and a spray pyrolysis method.
본 발명에 따른 태양전지의 제조방법에 있어서, 상기 전기분극층을 형성함과 동시에 형성되는 전기분극층에 잔류분극이 형성되도록 할 수 있다.In the method of manufacturing a solar cell according to the present invention, residual polarization may be formed in the electric polarization layer formed at the same time as forming the electric polarization layer.
본 발명에 따른 태양전지의 제조방법에 있어서, 상기 전기분극층은, 반응성 이온 스퍼터링 방법으로 형성되고, 상기 전기분극층을 형성할 때, 0V ~ -5V의 범위로 음의 전압을 인가하여 잔류분극이 형성되도록 할 수 있다.In the method of manufacturing a solar cell according to the present invention, the electric polarization layer is formed by a reactive ion sputtering method, and when the electric polarization layer is formed, a negative voltage is applied in a range of 0 V to -5 V, Can be formed.
본 발명에 따른 태양전지의 제조방법에 있어서, 상기 반응성 이온 스퍼터링은, 전기분극물질의 성분을 갖는 타겟(target)을 설치하고 진공상태에서 불활성 가스와 반응성 기체를 주입하는 단계와, 플라즈마를 발생하여 Ar 이온이 타겟에 충돌하여 방출되는 전기분극물질이 산소 플라즈마와 반응하여 산화물이 형성하는 단계를 포함할 수 있다.In the method of manufacturing a solar cell according to the present invention, the reactive ion sputtering may include a step of providing a target having a component of an electro-polarizable material, injecting an inert gas and a reactive gas in a vacuum state, And the step of causing the electro-polarizing material, which is emitted by the Ar ions colliding with the target, to react with the oxygen plasma to form an oxide.
본 발명에 따른 태양전지는 자발분극과 잔류분극 특성을 갖는 전기분극물질을 이용하여 분극성 터널 접합을 전극과 광흡수층에 인접하게 설치함으로써 내장전계를 형성하여 광흡수에 의해 p-n접합 반도체 내에서 생성된 전자와 정공의 재결합을 감소시키는 동시에 전극에의 수집효율을 개선하여 효율을 증대시킬 수 있다.The solar cell according to the present invention uses an electric polarization material having spontaneous polarization and remanent polarization properties to form a polarized tunnel junction adjacent to the electrode and the light absorption layer to form a built-in electric field and generate in the pn junction semiconductor It is possible to reduce the recombination of the electrons and the holes and to improve the efficiency of collecting the electrons on the electrode, thereby increasing the efficiency.
또한, 본 발명에 따른 태양전지에 구비된 분극성 터널 접합은 기존의 태양전지에 구비된 재결합 방지층을 대체할 수 있어, 공정을 단순화할 수 있다.In addition, the polarized tunnel junction provided in the solar cell according to the present invention can replace the recombination preventing layer provided in the conventional solar cell, thereby simplifying the process.
또한, 본 발명에 따른 태양전지의 제조방법에 의하면, 전기분극물질을 형성하면서 동시에 바이어스 전압을 인가하여 형성된 전기분극층 내에 잔류분극이 형성되도록 함으로써, 전기분극 상태를 보다 안정적으로 유지할 수 있어, 태양전지의 효율을 보다 장시간 유지할 수 있다.According to the method of manufacturing a solar cell according to the present invention, the remnant polarization is formed in the electric polarization layer formed by simultaneously forming the electric polarization material and simultaneously applying the bias voltage, so that the electric polarization state can be more stably maintained, The efficiency of the battery can be maintained for a longer time.
도 1은 본 발명의 실시예에 따른 분극성 터널 접합을 갖는 태양전지의 구조와 광전류가 향상되는 개념을 나타낸 도면이다.
도 2는 본 발명의 실시예에 따른 분극성 터널 접합을 포함하는 실리콘 태양전지의 단면구조의 모식도를 나타낸 도면이다.
도 3은 본 발명의 실시예에 따른 전기분극물질을 포함하는 분극성 터널 접합을 갖는 실리콘 태양전지의 제조과정을 나타낸 도면이다.1 is a view showing a structure of a solar cell having a polarized tunnel junction according to an embodiment of the present invention and a concept of improving the photocurrent.
2 is a schematic view showing a cross-sectional structure of a silicon solar cell including a polarized tunnel junction according to an embodiment of the present invention.
3 is a view illustrating a process of manufacturing a silicon solar cell having a polarized tunnel junction including an electric polarization material according to an embodiment of the present invention.
이하 본 발명의 실시예에 대하여 첨부된 도면을 참고로 그 구성 및 작용을 설명하기로 한다.DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
본 발명을 설명함에 있어, 관련된 공지 기능 또는 구성에 대한 구체적인 설명이 본 발명의 요지를 불필요하게 흐릴 수 있다고 판단되는 경우에는 그 상세한 설명을 생략할 것이다. 또한, 어떤 부분이 어떤 구성요소를 "포함"한다고 할 때, 이는 특별히 반대되는 기재가 없는 한 다른 구성요소를 제외하는 것이 아니라 다른 구성요소를 더 포함할 수 있는 것을 의미한다.In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. Also, when a part is referred to as "including " an element, it does not exclude other elements unless specifically stated otherwise.
도 1은 본 발명의 실시예에 따른 분극성 터널 접합을 갖는 태양전지의 구조와 광전류가 개선되는 개념을 나타낸 도면이다.1 is a view showing a structure of a solar cell having a polarized tunnel junction according to an embodiment of the present invention and a concept of improving a photocurrent.
전기분극 특성을 나타내는 대표적인 재료인 강유전체는 ABO3 구조 혹은 페로브스카이트(perpvskite) 격자구조로 되어 있는데, 이 격자의 중앙에 위치한 원자 B가 인가전압의 극성에 따라 상하로 움직이면서 분극 현상을 나타낸다. 이 원자의 위치에 따라 전압에 따른 전기분극의 크기가 다르게 나타난다. 즉, 격자에 위쪽으로부터 양의 전압(전기장)이 인가되면 중앙에 위치한 원자 B는 아래로 이동하며, 인가 전압의 증가에 따라 이동 거리도 길어지나, 전압이 차단되면 안정된 에너지 위치로 고정된다. 이때, 일정 크기의 분극이 존재하는데, 이를 잔류분극이라고 하며, 외부의 전기장이 없는 상태에서 스스로 분극을 가지는 것을 자발분극이라고 한다.The ferroelectric material, which is a representative material showing the electric polarization characteristic, has an ABO 3 structure or a perovskite lattice structure. At the center of the lattice, the atom B exhibits polarization phenomenon moving up and down according to the polarity of the applied voltage. The size of the electric polarization depends on the position of the atom. That is, when a positive voltage (electric field) is applied to the lattice from the upper side, the atom B positioned at the center moves downward. As the applied voltage increases, the travel distance becomes longer. At this time, there is a certain size of polarization, which is referred to as a remanent polarization, and having self-polarization in the absence of an external electric field is called spontaneous polarization.
이러한 잔류분극과 자발분극의 특성을 갖는 전기분극물질을 일정한 두께 이하로 전극과 광흡수층사이에 인접하여 설치하면 분극성 터널링 접합을 형성할 수 있다.The polarized tunneling junction can be formed by arranging the electric polarization material having the characteristics of remanent polarization and spontaneous polarization to be adjacent to the electrode and the light absorption layer to a certain thickness or less.
본 발명은 일반적인 실리콘 태양전지의 전극과 광흡수층 사이에 전기분극층을 설치하여 분극성 터널 접합을 형성하는데 특징이 있다. 즉, 도 1에 도시된 바와 같이, 전기분극물질은 분극에 의하여 인접한 광흡수층에 대하여 내장전계를 형성함으로써 광흡수에 의해 p-n접합 반도체 내에서 생성된 전하 캐리어(전자와 정공)의 재결합을 감소시킬 수 있다.The present invention is characterized in that an electric polarization layer is provided between an electrode of a general silicon solar cell and a light absorption layer to form a polarized tunnel junction. That is, as shown in FIG. 1, the electric polarization material forms a built-in electric field with respect to the adjacent light absorption layer by polarization, thereby reducing the recombination of the charge carriers (electrons and holes) generated in the pn junction semiconductor by light absorption .
또한 전하 캐리어의 농도가 증가하거나 외부에서 전기장을 역방향(음극에 양의 전압, 양극에는 음의 전압)으로 증가시키면(poling), 이에 대응하여 전기분극물질 내에서는 정방향으로 분극이 발생하므로 캐리어가 각각의 극성에 따라 같은 극성을 가진 전극 방향으로 터널링 현상에 의하여 수집될 수 있으므로 수집 효율이 개선되어 효율을 증대시킬 수 있다.In addition, when the concentration of the charge carrier increases or the electric field is increased in the opposite direction (positive voltage to the negative electrode and negative voltage to the positive electrode) from the outside, polarization occurs in the positive direction in the electric polarization material correspondingly, Can be collected by the tunneling phenomenon in the direction of the electrode having the same polarity according to the polarity of the polarity, so that the efficiency of collection can be improved and the efficiency can be increased.
또한, 일반적으로 전기분극물질로 사용되는 강유전체 물질의 박막에 있어서는 박막을 이루는 단위 입자들의 분극 방향(polarization orientation) 분포에 따라 전류의 전도에 대한 저항이 변화하므로 전기분극의 분포를 전류 방향에 대하여 정방향이 되도록 외부에서 전기장을 인가하면 분극 방향이 전류 방향에 대해 정방향으로 균일하게 배열되므로 도전성을 향상시킬 수 있다.In addition, in a thin film of a ferroelectric substance generally used as an electro-polarizing material, the resistance against the conduction of the current changes according to the polarization orientation distribution of the unit particles forming the thin film, The polarization direction is uniformly arranged in the positive direction with respect to the current direction, so that the conductivity can be improved.
그리고, 전기분극물질 박막의 두께가 얇을수록 터널링이 증가하므로 상기 전기분극물질의 두께는 100nm 이하의 두께로 형성하는 것이 바람직하다.The thickness of the electro-polarizing material is preferably less than 100 nm because tunneling is increased as the thickness of the electro-active material is decreased.
또한, 태양전지가 동작 중일 때는 순방향 전압이 인가되는 효과를 가지므로 이러한 경우에 전기분극층의 전기분극 크기와 방향이 변동하게 되어 전기분극이 태양전지의 동작 이전보다 감소하는 경향이 있으므로, 태양전지에 형성된 전기분극층의 효과를 일정 수준으로 유지하기 위해서는 전기분극층의 전기분극을 확대시킴으로써 동작시의 동작 전압(operating voltage) 범위에 있어서 전기분극 감소율을 최소화할 수 있고 또한 수집효율을 높이기 위한 최소한 전기분극을 고려할 때, 상기 전기분극물질의 두께는 5nm 이상으로 형성하는 것이 바람직하다.In addition, since the forward voltage is applied when the solar cell is in operation, the electric polarization of the electric polarization layer fluctuates in the magnitude and direction of the electric polarization layer, In order to maintain the effect of the electric polarization layer formed on the electrode layer at a certain level, the electric polarization of the electric polarization layer is widened to minimize the electric polarization reduction ratio in the operating voltage range during operation, In consideration of electric polarization, it is preferable that the thickness of the electric polarization material is 5 nm or more.
상기 전기분극층을 형성하는 방법으로는 결정질 박막의 형성이 용이한, 반응성 이온 스퍼터링법, 전자빔 증발법과 같은 물리기상증착(PVD: physical vapor deposition)법을 이용하는 것이 바람직하다.As the method of forming the electric polarization layer, it is preferable to use a physical vapor deposition (PVD) method such as a reactive ion sputtering method or an electron beam evaporation method in which a crystalline thin film can be easily formed.
반응성 이온 스퍼터링법의 경우, 진공 챔버 안에 형성하고자 하는 전기분극물질의 성분을 갖는 타겟(target)을 설치하고 진공상태에서 Ar과 같은 불활성 가스와 O2와 같은 반응성 기체를 주입하여 플라즈마를 발생시켜서 Ar 이온이 타겟에 충돌하여 방출되는 전기분극물질이 산소 플라즈마와 반응하여 산화물이 형성되면서 기판 위에 결정성 박막으로 형성되도록 할 수 있다.In the case of the reactive ion sputtering method, a target having a component of an electric polarization material to be formed in a vacuum chamber is provided, and an inert gas such as Ar and a reactive gas such as O 2 are injected in a vacuum state to generate a plasma, Ions may collide with the target and the emitted electric polarization material may react with the oxygen plasma to form an oxide and be formed as a crystalline thin film on the substrate.
도 2는 본 발명의 일 실시형태에 따른 실리콘 태양전지의 구조를 나타낸 것이다.2 shows a structure of a silicon solar cell according to an embodiment of the present invention.
도 2에 도시된 바와 같이, 본 발명의 일 실시형태에 따른 실리콘 태양전지는 Al 박막의 하부에 Ag 그리드가 형성된 p극과, ITO와 같은 투명 전도성 물질로 이루어진 투명전극과 투명전극상에 형성된 Ag 그리드가 형성된 n극과, 상기 p극과 n극의 사이에 형성된 p형 실리콘과 n형 실리콘이 접합된 광흡수층과, 상기 광흡수층과 투명전극 사이에 형성된 전기분극층으로 이루어진다.2, a silicon solar cell according to an embodiment of the present invention includes a p-electrode having an Ag grid formed under an Al thin film, a transparent electrode made of a transparent conductive material such as ITO, and an Ag An n-electrode formed with a grid, a light absorbing layer formed by p-type silicon and n-type silicon formed between the p-electrode and the n-electrode, and an electric polarization layer formed between the light absorbing layer and the transparent electrode.
본 발명의 일 실시형태에 있어서, 전기분극층은 재결합 방지의 기능을 가지므로, 일반적인 결정질 실리콘 태양전지에서 재결합 방지층으로 사용되는 TiO2, Al2O3와 같은 물질로 이루어지는 절연층을 대체하여, 분극층의 형성과 재결합 방지를 동시에 구현할 수 있게 할 수 있다.In an embodiment of the present invention, since the electric polarization layer has a function of preventing recombination, the insulating layer made of a material such as TiO 2 or Al 2 O 3 used as a recombination preventing layer in a general crystalline silicon solar cell can be replaced, It is possible to simultaneously form the polarization layer and prevent recombination.
도 3은 도 2의 태양전지를 제조하는 과정을 개략적으로 나타낸 것이다. 먼저, 붕소(boron)가 도핑된 p형 실리콘 웨이퍼의 표면에 표면 반사를 저감하기 위하여, 습식식각 방법을 사용하여 수 마이크로미터 깊이의 텍스처(texture)를 형성한다(도 3b).3 schematically shows a process of manufacturing the solar cell of FIG. First, to reduce surface reflections on the surface of a boron-doped p-type silicon wafer, a wet etch process is used to form a texture several micrometers deep (FIG. 3B).
텍스처가 형성된 실리콘 웨이퍼 상에 POCl3와 같이 인(phosphorus)을 포함하는 기체를 이용하여 열처리함으로써, 실리콘 웨이퍼 표면에 도핑을 통하여 n형 실리콘층을 형성한다(도 3c).The surface of the silicon wafer is doped to form an n-type silicon layer by heat treatment using a phosphorus-containing gas such as POCl 3 on a textured silicon wafer (FIG. 3C).
상기 n형 실리콘층 상에, 증착속도에서 유리한 반응성 이온 스퍼터링 방법을 적용하여 CuSiO3를 포함하는 CuxSiyOz 박막을 약 50nm의 두께로 형성하여 전기분극층을 형성한다(도 3d). 본 발명의 실시형태에서는 반응성 이온 스퍼터링법을 사용하였으나, 전기도금, 잉크 프린팅, 스프레이 열분해법 등과 같은 저비용의 비진공법과 같이 전기분극층을 형성할 수 있는 방법이라면 특별히 제한없이 사용될 수 있다. 또한, 본 발명의 일 실시형태에서는 전기분극층으로 CuxSiyOz 박막을 형성하였으나, MgxSiyOz, FexSiyOz, CuxTiyOz 등도 바람직한 예로서 사용될 수 있다.A Cu x Si y O z thin film containing CuSiO 3 is formed to a thickness of about 50 nm on the n-type silicon layer by applying a reactive ion sputtering method favorable at a deposition rate to form an electric polarization layer (FIG. Although the reactive ion sputtering method is used in the embodiments of the present invention, it can be used without any particular limitations as long as it can form an electric polarization layer like low cost non-invasive method such as electroplating, ink printing, spray pyrolysis and the like. In addition, in the embodiment of the present invention, the CuxSiyOz thin film is formed as the electric polarization layer, but Mg x Si y O z , Fe x Si y O z , Cu x Ti y O z and the like can also be used as preferred examples.
이때, 스퍼터링 타겟은 Cu와 Si 및 O를 포함하는 화합물 조성을 갖는 99.99% 이상의 순도를 갖는 재료를 사용한다. 반응성 이온 스퍼터링에 의한 전기분극층의 증착 단계는 시간대별로 4개 구간으로 구분하여 진행한다. 먼저, Cu와 Si 및 O를 포함하는 물질로서 예를 들어 CuSiO3 등을 이용하여 스퍼터링 타겟 재료를 설치한 다음, Ar을 캐리어 기체로, O2를 반응 기체로 하여 주입하는 단계와, 플라즈마를 발생시켜서 Ar 이온을 이용하여 타겟 재료로부터 금속원자를 방출시키는 단계와, 산소 이온이 방출된 금속원자와 반응하여 Cu, Si가 포함된 산화물을 형성하는 단계를 통하여 CuxSiyOz를 포함하는 복합 산화물 박막을 형성한다.At this time, the sputtering target uses a material having a composition of Cu, Si and O and having a purity of 99.99% or more. The deposition step of the electric polarization layer by reactive ion sputtering is divided into four sections according to time zones. First, a sputtering target material is provided by using Cu, Si and O as a material, for example, CuSiO 3 , and then a step of injecting Ar as a carrier gas and O 2 as a reaction gas, A step of releasing metal atoms from a target material by using Ar ions and a step of reacting with metal atoms from which oxygen ions have been released to form oxides containing Cu and Si to form a complex containing Cu x Si y O z Thereby forming an oxide thin film.
상기 스퍼터링에 있어서 공정온도는 200℃ 이하, 공정 압력은 5mTorr, Ar 유량은 20 ~ 50sccm, O2 유량은 10 ~ 30sccm, 직류 전압은 300 ~ 500V를 적용하고, 시간은 10분 이내로 진행하여, 약 1nm ~ 100nm 두께의 전기분극층을 형성할 수 있으며, 보다 바람직하게는 200℃에서 4분을 적용하여 약 50nm의 CuSiO3 등의 CuxSiyOz 복합 산화물을 포함하는 전기분극층을 형성한다.In the sputtering, the process temperature was 200 ° C or less, the process pressure was 5 mTorr, the Ar flow rate was 20 to 50 sccm, the O 2 flow rate was 10 to 30 sccm, and the DC voltage was 300 to 500 V, An electric polarization layer having a thickness of 1 nm to 100 nm can be formed and more preferably an electric polarization layer containing Cu x Si y O z composite oxide such as CuSiO 3 of about 50 nm is formed at 200 ° C for 4 minutes .
또한, 이상과 같이 전기분극물질을 형성하는 과정이나 이후 단계에 있어서, 실리콘 웨이퍼 쪽에 역방향 바이어스(bias)를 인가하여 형성되거나 형성된 전기분극층 내에 잔류분극을 형성하는 과정(폴링: poling)을 적용할 수 있다. 이때 역방향 바이어스 전압의 범위는 실리콘 다이오드의 역방향 파괴전합 이내의 범위로서 0 ~ -5V 이내의 음의 전압이 바람직하다.Further, in the process of forming the electric polarization material as described above or a subsequent step, a process of forming a remnant polarization in the electric polarization layer formed or formed by applying a reverse bias to the silicon wafer (poling) is applied . In this case, the range of the reverse bias voltage is within the range of reverse breakdown junction of the silicon diode, and a negative voltage within 0 to -5 V is preferable.
이후, 상기 전기분극층 위에 투명 전도성 물질을 증착하여 투명 전극(TCE: transparent conducting electrode)를 형성하여 분극성 터널 접합의 구조를 완성한다(도 3e). 이때 투명 전극 물질로는 인듐 주석 산화물(ITO), 아연 산화물(ZnO), AZO(Al-doped ZnO), FTO(F-doped SnO2) 등이 사용될 수 있으며, 투명 전극은 예를 들어 스퍼터링과 같은 방법으로 형성할 수 있다.Thereafter, a transparent conductive material is deposited on the electric polarization layer to form a transparent conducting electrode (TCE) to complete the structure of the polarized tunnel junction (FIG. 3E). As the transparent electrode material, indium tin oxide (ITO), zinc oxide (ZnO), AZO (Al-doped ZnO), FTO (F-doped SnO 2 ) and the like can be used. . ≪ / RTI >
그리고, 후면에 Al과 같은 전도성 물질의 박막을 스크린 프린팅(screen printing)과 같은 인쇄 방법으로 형성하고(도 3f), 전면과 후면에 Ag를 메인 및 서브 패턴 형태로 인쇄한 후, 소성 열처리를 함으로써 분극성 터널 접합을 갖는 실리콘 결정질 태양전지 셀이 완성된다(도 3g).
Then, a thin film of a conductive material such as Al is formed on the rear surface by a printing method such as screen printing (Fig. 3F). Ag is printed in the main and sub pattern forms on the front and rear surfaces, A silicon crystalline solar cell having a polarized tunnel junction is completed (Fig. 3G).
Claims (13)
상기 전극과 광흡수층 사이에 전기분극물질을 형성하여 이루어진 분극성 터널 접합을 포함하여 이루어진 태양전지.A light absorbing layer is interposed between two electrodes arranged so as to face each other,
And a polarized tunnel junction formed by forming an electric polarization material between the electrode and the light absorption layer.
상기 전기분극물질은, I족, IV족, 및 VI족 원소를 포함하는 화합물, 또는 II족, IV족, 및 VI족 원소를 포함하는 화합물 중의 하나 이상을 포함하는 태양전지.3. The method according to claim 1 or 2,
Wherein the electro-polarizing material comprises at least one compound selected from the group consisting of Group I, Group IV, and Group VI elements, or Group II, IV, and VI elements.
상기 전기분극물질은, Ti 또는 Si 중 하나 이상을 포함하는 산화물로 이루어진 태양전지.3. The method according to claim 1 or 2,
Wherein the electro-polarizing material is made of an oxide containing at least one of Ti and Si.
상기 전기분극물질은, MgxSiyOz, FexSiyOz, CuxTiyOz, CuxSiyOz (여기서, x, y, z는 임의의 양수) 중에서 선택된 1종 이상을 포함하는 태양전지.5. The method of claim 4,
Wherein the electro-polarizing material is selected from the group consisting of Mg x Si y O z , Fe x Si y O z , Cu x Ti y O z , Cu x Si y O z (where x, y and z are any positive numbers) ≪ / RTI >
상기 광흡수층 물질은 Si인 태양전지.3. The method according to claim 1 or 2,
Wherein the light absorbing layer material is Si.
상기 광흡수층 물질은, 비정질 Si, 다결정 Si 또는 단결정 Si 중의 하나 이상을 포함하는 태양전지.3. The method according to claim 1 or 2,
Wherein the light absorbing layer material comprises at least one of amorphous Si, polycrystalline Si, and monocrystalline Si.
상기 광흡수층과 전도성 물질층 사이에 전기분극물질층을 형성하는 단계를 포함하고,
상기 광흡수층과 전도성 물질층과 전기분극물질층이 분극성 터널 접합을 형성하는 태양전지의 제조방법.A manufacturing method of a solar cell including a light absorbing layer and a conductive material layer,
Forming a layer of an electrically polarizing material between the light absorbing layer and the conductive material layer,
Wherein the light absorbing layer, the conductive material layer, and the electro-polarizing material layer form a polarized tunnel junction.
상기 텍스처 상에 전기분극물질층을 형성하는 단계;
상기 전기분극물질층 상에 전도성 물질층을 형성하는 단계;를 포함하고,
상기 광흡수층, 전도성 물질층 및 전기분극물질층이 분극성 터널 접합을 형성하는 태양전지의 제조방법.Forming a texture on the light absorbing layer;
Forming an electro-polar material layer on the texture;
And forming a layer of conductive material on the layer of electrically polarizing material,
Wherein the light absorbing layer, the conductive material layer and the electro-polarizing material layer form a polarized tunnel junction.
상기 전기분극물질층을, 진공증착법, 전기도금법, 잉크 프린팅법, 스프레이 열분해법 중에서 선택된 하나 이상의 방법으로 형성하는 태양전지의 제조방법.10. The method according to claim 8 or 9,
Wherein the layer of the electric polarization material is formed by at least one method selected from a vacuum deposition method, an electroplating method, an ink printing method, and a spray pyrolysis method.
상기 전기분극층을 형성함과 동시에 형성되는 전기분극층에 잔류분극이 형성되도록 하는 태양전지의 제조방법.10. The method according to claim 8 or 9,
Thereby forming a remnant polarization in the electric polarization layer formed at the same time as forming the electric polarization layer.
상기 전기분극층은, 반응성 이온 스퍼터링 방법으로 형성되고,
상기 전기분극층을 형성할 때, 0V ~ -5V의 범위로 음의 전압을 인가하여 잔류분극이 형성되도록 하는 태양전지의 제조방법.10. The method according to claim 8 or 9,
Wherein the electric polarization layer is formed by a reactive ion sputtering method,
Wherein a negative voltage is applied in a range of 0 V to -5 V to form a remnant polarization when the electric polarization layer is formed.
상기 반응성 이온 스퍼터링은,
전기분극물질의 성분을 갖는 타겟(target)을 설치하고 진공상태에서 불활성 가스와 반응성 기체를 주입하는 단계와,
플라즈마를 발생하여 Ar 이온이 타겟에 충돌하여 방출되는 전기분극물질이 산소 플라즈마와 반응하여 산화물이 형성하는 단계를 포함하는 태양전지의 제조방법.13. The method of claim 12,
In the reactive ion sputtering,
Providing a target having a component of an electro-polarizing material and injecting an inert gas and a reactive gas in a vacuum state;
Generating a plasma, and causing the Ar ion to collide with the target, and causing the released electro-polar material to react with the oxygen plasma to form an oxide.
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| US20120017976A1 (en) * | 2010-06-18 | 2012-01-26 | Institut National De La Recherche Scientifique (Inrs) | Combined pn junction and bulk photovoltaic device |
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