KR20160065612A - Solar cells and manufacturing method for the same - Google Patents
Solar cells and manufacturing method for the same Download PDFInfo
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- KR20160065612A KR20160065612A KR1020140169818A KR20140169818A KR20160065612A KR 20160065612 A KR20160065612 A KR 20160065612A KR 1020140169818 A KR1020140169818 A KR 1020140169818A KR 20140169818 A KR20140169818 A KR 20140169818A KR 20160065612 A KR20160065612 A KR 20160065612A
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- 238000004519 manufacturing process Methods 0.000 title abstract description 18
- 230000010287 polarization Effects 0.000 claims abstract description 56
- 239000004020 conductor Substances 0.000 claims abstract description 16
- 150000001875 compounds Chemical class 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 43
- 238000004544 sputter deposition Methods 0.000 claims description 13
- 230000031700 light absorption Effects 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 5
- 238000005118 spray pyrolysis Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 238000001771 vacuum deposition Methods 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 229910052719 titanium Inorganic materials 0.000 abstract description 2
- 238000010521 absorption reaction Methods 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 abstract 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 abstract 1
- 239000005751 Copper oxide Substances 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 229910000431 copper oxide Inorganic materials 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 description 13
- 230000005684 electric field Effects 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000002269 spontaneous effect Effects 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- -1 besides Al Substances 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000002768 anti-recombination Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
The present invention relates to a solar cell and a method of manufacturing the same, and more particularly, to a solar cell and a method of manufacturing the same. More particularly, the present invention relates to a solar cell and a method of manufacturing the same, To a structure of a solar cell having improved conversion efficiency and a manufacturing method thereof.
Silicon solar cell is a crystalline solar cell technology including monocrystalline and polycrystalline which shows the largest market share at present, and technology which can manufacture with high efficiency and low price is being developed
In the past 20 years, the most efficient silicon solar cell in the world has been using 25% PERL (Passive Emitter Rear Locally Diffused) structure developed by the University of New South Wales, Australia, At the April IEEE Photovoltaic Specialists Conference, Panasonic adopted a new structure to achieve an efficiency of 25.6%. This solar cell changes the front contact which blocks a part of the incoming solar light, and is located on the rear surface of both the anode junction and the cathode junction. In addition, a high-quality amorphous silicon film was formed on the crystalline silicon wafer to suppress damage to the wafer surface, thereby minimizing the occurrence of carrier recombination on both the front and rear sides, achieving an efficiency of 25.6% over an efficiency wall of 25%.
However, all of the above-mentioned efficiency record updating related designs have the disadvantage of using high-quality silicon crystals, which is less than about 30% of the theoretical efficiency of a single-junction solar cell for ground use.
Thin film solar cell technology is next generation solar cell technology compared to crystalline Si solar cell, which has the biggest market share at present. Thin film solar cell can be manufactured at a lower cost than the crystalline Si solar cell, but can be manufactured at a low cost (Cu (In, Ga) Se 2 ) solar cell.
In the case of such a thin film solar cell, in order to further improve the efficiency, a method through fusion with other devices such as a piezoelectric device has been proposed.
For example, Patent Document 1 by Wang et al. Discloses a hybrid solar nanogenerator that uses a ZnO nanowire in series or in parallel with an electrode of a dye-sensitized solar cell, A method is proposed in which a piezoelectric nanogenerator is installed to collect electric charges generated by mechanical vibration and contribute to the amount of generated electricity together with the photocurrent, thereby improving the efficiency. However, the technique disclosed in Patent Document 1 has a disadvantage in that it is economically disadvantageous because energy and apparatus for generating mechanical vibration are incidentally required.
Patent Document 2 discloses a solar cell technology capable of exhibiting light conversion efficiency improved by an electric field enhancement effect. This technology is applied to a thin film solar cell having a nanorod, a nanowire or a nano- A field emission layer including a nanostructure having a shape of a tube or the like is provided for effectively transferring electrons and holes generated from the photoactive layer to each electrode by light to improve the photoelectric conversion efficiency of the solar cell, As a result of the application to the solar cell, the efficiency improvement effect is insignificant, but the process cost required for fabricating the nanostructure increases, and the economical efficiency is inferior to the technology disclosed in Patent Document 1.
An object of the present invention is to provide a structure of a conductor-polarized semiconductor-conductor structure using an electrical polarization material having spontaneous polarization and remanent polarization characteristics as a light absorption layer. Thereby forming a built-in electric field to reduce the recombination of electrons and holes generated in the semiconductor by light absorption and improve the collection efficiency to the electrode to increase the efficiency And a method for manufacturing the solar cell.
According to a first aspect of the present invention, there is provided an electrodisplacive solar cell including a light absorbing layer disposed between two electrodes disposed opposite to each other, wherein the light absorbing layer comprises an electro-polarizing material.
In the solar cell, at least one of the two electrodes is made of a material through which sunlight is transmitted.
In the solar cell, the electro-polarizing material may include an I-IV-VI group or a II-IV-VI group compound, and may preferably include an oxide containing Cu, Si, or Ti, Cu x Si y O z , Cu x Ti y O z (where x, y, and z are any positive numbers).
In the solar cell, the material constituting the light absorbing layer may have an energy band gap in the range of 0.5 to 1.5 eV.
In the solar cell, the electro-polarizing material may include at least one of amorphous, polycrystalline, or single crystal.
According to a second aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a lower electrode with a conductive material on a substrate; forming a light absorbing layer with a material having electric polarization properties on the lower electrode; And forming an upper electrode using a transparent conductive material. The present invention also provides a method of manufacturing an electrodisplaced solar cell.
In the method of manufacturing the solar cell, the light absorbing layer may be formed by a vacuum deposition method, an electroplating method, an ink printing method, or a spray pyrolysis method.
In the method of manufacturing the solar cell, after forming the light absorbing layer, a voltage may be externally applied to form a remnant polarization in the material having the electric polarization characteristic.
In the manufacturing method of the solar cell, residual polarization may be formed in the material having the electric polarization characteristic in the process of forming the light absorbing layer.
In the above-described method of manufacturing a solar cell, the light absorbing layer is formed by a reactive ion sputtering method, and a voltage is applied in a range of 0 V to -5 V at the time of forming the light absorbing layer, .
The reactive ion sputtering may include the steps of providing a target having a component of an electro-polarizing material and injecting an inert gas and a reactive gas in a vacuum state; And the step of causing the electro-polarizing material to collide with the target and react with the oxygen plasma to form an oxide.
The solar cell according to the present invention has a built-in electric field by providing an electric polarization layer having spontaneous polarization and residual polarization properties as a light absorption layer to reduce recombination of electrons and holes generated in the semiconductor by light absorption, It is possible to improve the collection efficiency to increase the efficiency and to simplify the process by replacing the existing anti-recombination layer.
In addition, according to the method for manufacturing a solar cell according to the present invention, a non-invasive method such as a reactive ion sputtering method or an electron beam evaporation method, a vacuum deposition method, an electroplating method, an ink printing method, a spray pyrolysis method, do.
According to the method of manufacturing a solar cell according to the present invention, the remnant polarization is formed in the electric polarization layer formed by forming the electric polarization material and simultaneously applying the bias voltage, so that the electric polarization state can be more stably maintained. It is expected that the efficiency of the battery can be maintained for a longer time.
FIG. 1 is a view showing a structure of a conductor-polarized semiconductor-conductor solar cell including an electro-polarizable material according to the present invention and a concept of improving photocurrent.
FIG. 2 is a schematic view showing a cross-sectional structure of a conductor-polarized semiconductor-conductor solar cell in which the light absorption layer according to the present invention is made of an electro-polarizable material.
FIG. 3 is a view showing a manufacturing process of a conductor-polarized semiconductor-conductor solar cell in which a light absorption layer according to an embodiment of the present invention is made of an electro-polarizing material.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. Also, when a part is referred to as "including " an element, it does not exclude other elements unless specifically stated otherwise.
FIG. 1 is a view showing a structure of a conductor-polarized semiconductor-conductor solar cell including an electro-polarizable material according to the present invention and a concept of improving photocurrent. FIG. 2 is a cross- Sectional view schematically showing a cross-sectional structure of a conductor-polarized semiconductor-conductor solar cell.
The ferroelectric material, which is a representative material showing the electric polarization characteristic, has an ABO 3 structure or a perpvskite lattice structure. At the center of the lattice, the atom B exhibits a polarization phenomenon moving up and down according to the polarity of the applied voltage. The size of the electric polarization depends on the position of the atom. That is, when a positive voltage (electric field) is applied to the lattice from the upper side, the atom B positioned at the center moves downward. As the applied voltage increases, the travel distance becomes longer. At this time, there is a certain size of polarization, which is referred to as a remanent polarization, and having self-polarization in the absence of an external electric field is called spontaneous polarization.
Electrically polarized solar cells having the characteristics of remanent polarization and spontaneous polarization may be formed adjacent to the electrodes with a certain thickness or less. That is, the electro-polarizing material can reduce the recombination of the charge carriers (electrons and holes) generated in the semiconductor by light absorption by forming a built-in electric field by polarization.
Further, when the concentration of the charge carrier increases or the electric field is increased from the outside to the opposite direction (positive voltage to the negative electrode and negative voltage to the positive electrode), polarization in the positive direction occurs in the electric polarization material correspondingly, Can be collected by the internal electric field in the direction of the electrode having the same polarity according to the number of the electrodes, so that the collection efficiency can be improved and the photocurrent can be increased.
That is, generally, in a thin film of a ferroelectric material used as an electro-polarizing material, the size of the polarization varies according to the polarization orientation distribution of the unit particles forming the thin film. Therefore, The polarizing direction is uniformly arranged in the positive direction with respect to the current direction, so that the polarization can be increased in size. The thickness of the electro-polarizing material constituting the light absorbing layer is preferably in the range of 100 nm to 2 μm Do. This is because when the thickness of the electro-polarizing material is less than 100 nm, the light absorption amount becomes insufficient, and when the thickness exceeds 2 탆, the electric field decreases in size.
Since the forward voltage is applied when the solar cell is in operation, the electric polarization and the direction of the electric polarization of the electric polarization layer fluctuate in such a case, so that the electric polarization tends to decrease compared to before the operation of the solar cell. In order to maintain the effect of the electric polarization layer at a certain level, the electric polarization of the electric polarization layer is enlarged, thereby minimizing the electric polarization reduction rate in the operating voltage range during operation.
Meanwhile, the electro-polarizing material is preferably a composite oxide having an energy band gap of 0.5 to 1.5 eV in order to be applied as a light absorbing layer. For example, oxides such as CuO, Cu 2 O, CuTiO 3 and CuSiO 3 may have the above-described band gap energy, so that such oxides can be used as a light absorbing layer material, and Cu x Si y O z , Cu x Ti y O z (x, y, and z are any positive numbers) can be preferably used.
As the method of forming the electric polarization layer, it is preferable to use a physical vapor deposition (PVD) method such as a reactive ion sputtering method or an electron beam evaporation method in which a crystalline thin film can be easily formed.
In the case of the reactive ion sputtering method, a target having a component of an electric polarization material to be formed in a vacuum chamber is provided, and an inert gas such as Ar and a reactive gas such as O 2 are injected in a vacuum state to generate a plasma, Ions may collide with the target and the emitted electric polarization material may react with the oxygen plasma to form an oxide and be formed as a crystalline thin film on the substrate.
[Example 1]
FIG. 3 is a view showing a manufacturing process of a conductor-polarized semiconductor-conductor solar cell in which a light absorption layer according to an embodiment of the present invention is made of an electro-polarizing material.
First, as shown in FIG. 3A, an Al thin film is prepared to form a rear electrode. As the back electrode material, besides Al, materials such as Mo and W are also possible. Alternatively, a conductive material such as Al, Mo or W may be deposited thereon by using an insulating substrate such as glass or plastic to form a lower electrode.
At this time, in addition to the vacuum deposition method such as sputtering, the conductive material may also be a low cost non-invasive method such as electroplating, ink printing, spray pyrolysis and the like.
Further, as shown in FIG. 3B, a thin film of Cu x Si y O z (where x, y and z are positive) containing CuSiO 3 is formed by applying a sputtering method with a high deposition rate on the Al thin film To form a light absorbing layer having electric polarization characteristics.
Specifically, the sputtering target uses a material having a composition of Cu, Si, and O and having a purity of 99.99% or more. The deposition step of the electric polarization layer by reactive ion sputtering is divided into four sections according to time zones. First, a sputtering target material is provided by using Cu, Si and O as a material, for example, CuSiO 3 , and then a step of injecting Ar as a carrier gas and O 2 as a reaction gas and a plasma A step of releasing metal atoms from a target material by using Ar ions and a step of reacting with metal atoms from which oxygen ions have been released to form oxides containing Cu and Si to form a composite oxide thin film containing Cu x Si y O z .
In the above sputtering, an electric polarization of about 100 nm to 0.5 占 퐉 thick is formed by applying a process temperature of 200 占 폚 or less, a process pressure of 2 mTorr, an Ar flow rate of 20 to 50 sccm, an O 2 flow rate of 10 to 30 sccm, Layer can be formed. Preferably 200 占 폚 for 30 minutes to form an electric polarization layer containing Cu x Si y O z composite oxide such as CuSiO 3 of about 0.5 탆.
In addition to the vacuum deposition method such as sputtering, the electric polarization layer can also be applied to a low cost non-invasive method such as electroplating, ink printing, spray pyrolysis, and the like.
Next, as shown in FIG. 3C, a transparent conductive material is deposited on the Cu x Si y O z thin film as the light absorbing layer to form a transparent conducting electrode (TCE). As the transparent conductive material, a material such as indium tin oxide (ITO), zinc oxide (ZnO), aluminum-doped ZnO, and fluorine-doped tin oxide (F-doped SnO 2 ) can be formed by a sputtering method have.
Finally, as shown in FIG. 3D, Ag is printed by a screen printing method and baked and heat-treated to form upper and lower electrodes to complete the battery.
Meanwhile, after or during the formation of the electric polarization material, a process of forming a residual polarization in the electric polarization layer by applying a reverse bias to the substrate may be applied (poling). In this case, the range of the reverse bias voltage is within the range of reverse breakdown junction of the silicon diode, and a negative voltage within 0 to -5 V is preferable.
Claims (14)
Wherein the light absorbing layer comprises an electro-polarizing material.
Wherein at least one of the two electrodes is made of a material through which sunlight is transmitted.
Wherein the electro-polarizing material comprises an I-IV-VI group or a II-IV-VI group compound.
Wherein the electro-polarizing material comprises a Cu-containing oxide.
Wherein the electro-polarizing material comprises Si or a Ti-containing oxide.
Wherein the electro-polarizing material comprises at least one of Cu x Si y O z , Cu x Ti y O z (where x, y, and z are any positive numbers).
Wherein the material of the light absorbing layer has an energy band gap in a range of 0.5 to 1.5 eV.
Wherein the electro-polarizing material comprises at least one of amorphous, polycrystalline, or single crystal.
Forming a light absorbing layer on the lower electrode with a material having an electric polarization characteristic;
And forming an upper electrode with a transparent conductive material on the light absorption layer.
Wherein the light absorbing layer is formed by a vacuum deposition method, an electroplating method, an ink printing method, or a spray pyrolysis method.
Wherein after the formation of the light absorption layer, a voltage is externally applied to form a remnant polarization in a material having the electric polarization characteristic.
Wherein a remnant polarization is formed in a material having the electric polarization characteristic in the process of forming the light absorbing layer.
The light absorption layer is formed by a reactive ion sputtering method,
Wherein a voltage is applied in a range of 0 V to -5 V when forming the light absorbing layer so that a remnant polarization is formed simultaneously with the formation of the light absorbing layer.
In the reactive ion sputtering,
Providing a target having a component of an electro-polarizing material and injecting an inert gas and a reactive gas in a vacuum state;
Generating a plasma, and causing the Ar ion to collide with the target, and causing the released electro-polar material to react with the oxygen plasma to form an oxide.
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|---|---|---|---|---|
| KR20110087226A (en) | 2010-01-25 | 2011-08-02 | (주)루미나노 | Solar cells showing improved light conversion efficiency by electric field enhancement effects |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110087226A (en) | 2010-01-25 | 2011-08-02 | (주)루미나노 | Solar cells showing improved light conversion efficiency by electric field enhancement effects |
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| Title |
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| 1. 미국 등록 특허공보 US7,705,523 (2010년4월27일) |
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