KR20160030656A

KR20160030656A - Light emitting device package, light emitting device package module, lighting device and its manufacturing method

Info

Publication number: KR20160030656A
Application number: KR1020140120052A
Authority: KR
Inventors: 김경민; 유준상
Original assignee: (주)웨이브닉스이에스피
Priority date: 2014-09-11
Filing date: 2014-09-11
Publication date: 2016-03-21

Abstract

The present invention relates to a light emitting device package used for display or lighting to obtain uniform brightness, a light emitting device package module, a lighting device and a manufacturing method thereof. The light emitting device package includes a substrate; a first wiring layer formed on the substrate; a first light emitting device which is placed on the first wiring layer to be electrically connected to the first wiring layer and to emit light; a second wiring layer which is formed on the substrate and is formed to be controlled independently of the first wiring layer; a second light emitting device which is placed on the second wiring layer to be electrically connected to the second wiring layer and to emit light; and a light conversion material which touches the first light emitting device and the second light emitting device to surround at least part of the first light emitting device and the second light emitting device.

Description

TECHNICAL FIELD [0001] The present invention relates to a light emitting device package, a light emitting device package module, a lighting device,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device package, a light emitting device package module, an illuminating device and a method of manufacturing the same, and more particularly to a light emitting device package, a light emitting device package module, .

A light emitting diode (LED) is a kind of semiconductor device that can emit light of various colors by forming a light emitting source through the formation of a PN diode of a compound semiconductor. Such a light emitting device has a long lifetime, can be reduced in size and weight, and can be driven at a low voltage. In addition, these LEDs are resistant to shock and vibration, do not require preheating time and complicated driving, can be packaged after being mounted on a substrate or lead frame in various forms, so that they can be modularized for various purposes and used as a backlight unit A lighting device, and the like.

The conventional lighting apparatus using the light emitting device package has controlled the number of light emitting device packages which are very simply emitted when the dimming control is performed to darken or brighten the light gradually by adjusting the light amount.

However, in the method of controlling the number of light emitting devices, the light emitting device package is bright only in the vicinity of the light emitting device package, and the vicinity of the light emitting device package that is not emitting light is dark, causing shading, unnatural lighting, .

Disclosure of Invention Technical Problem [8] Accordingly, the present invention has been made keeping in mind the above problems occurring in the prior art, and an object of the present invention is to provide a light emitting device package having a plurality of light emitting devices, A light emitting device package capable of dimming control capable of simultaneously brightening or darkening all the light emitting device packages, thereby preventing occurrence of shading, enabling natural lighting, and achieving high-quality lighting with uniform brightness even in a large area , A light emitting device package module, an illumination device, and a method of manufacturing the same. However, these problems are exemplary and do not limit the scope of the present invention.

According to an aspect of the present invention, there is provided a light emitting device package including: a substrate; A first wiring layer formed on the substrate; A first light emitting device that is mounted on the first wiring layer so as to be electrically connected to the first wiring layer and emit light; A second wiring layer formed on the substrate and configured to be controlled independently of the first wiring layer; A second light emitting device that is mounted on the second wiring layer so as to be electrically connected to the second wiring layer and emit light; And a light conversion material contacting the first light emitting device and the second light emitting device to surround at least a part of the first light emitting device and the second light emitting device.

The light emitting device package according to the present invention may further include: a third wiring layer formed on the substrate and configured to be controlled independently of the second wiring layer; And a third light emitting device that is mounted on the third wiring layer so as to be electrically connected to the third wiring layer and emit light, wherein the light conversion material is formed of the first light emitting device, the second light emitting device, The first light emitting element, the second light emitting element, and the third light emitting element so as to surround at least a part of the third light emitting element.

According to another aspect of the present invention, there is provided a light emitting device package including: a fourth wiring layer formed on a substrate and configured to be controlled independently of the third wiring layer; And a fourth light emitting device that is mounted on the fourth wiring layer so as to be electrically connected to the fourth wiring layer and emit light, wherein the light conversion material is disposed between the first light emitting device, , The third light emitting device, and the fourth light emitting device so as to surround at least a part of the third light emitting device and the fourth light emitting device.

In addition, the light emitting device package according to the present invention may include a fifth light emitting device that is mounted on the first wiring layer so as to be electrically connected to the first wiring layer and emit light; And a sixth light emitting device that is mounted on the second wiring layer so as to be electrically connected to the second wiring layer and emit light.

In addition, the light emitting device package according to the present invention may include a fifth light emitting device that is mounted on the first wiring layer so as to be electrically connected to the first wiring layer and emit light; A sixth light emitting device that is mounted on the second wiring layer so as to be electrically connected to the second wiring layer and emit light; A seventh light emitting element mounted on the third wiring layer so as to be electrically connected to the third wiring layer and emit light; And an eighth light emitting device that is mounted on the fourth wiring layer so as to be electrically connected to the fourth wiring layer and emit light.

According to an aspect of the present invention, the substrate is an insulating substrate made of an insulating mixed material in which a binder and a heat dissipating powder are mixed, the first wiring layer and the second wiring layer are formed on an upper surface of the substrate, The material is a phosphor or a quantum dot, and a bottom electrode layer formed on the bottom surface of the substrate; And a penetrating electrode formed through the substrate and electrically connecting the first wiring layer or the second wiring layer to the lower electrode layer.

According to an aspect of the present invention, the penetrating electrode includes a first plating layer which is plated along the inner wall of the through-hole formed in a shape penetrating from the lower surface of the substrate to the lower surface of the first wiring layer or the second wiring layer .

According to an aspect of the present invention, the binder includes an epoxy-based resin, and the heat-dissipating powder is selected from at least one of a ceramic powder, a metal powder, a metal powder coated with an insulator, under,

And a second plating layer formed on the upper surface of the first wiring layer or the second wiring layer at the same time when the first plating layer is plated.

According to another aspect of the present invention, there is provided a light emitting device package including: a reflective layer formed on the second plating layer; And a strength reinforcing layer which is provided on a lower surface of the substrate and is provided below the space between the first wiring layer and the second wiring layer so as to reinforce the package strength.

According to an aspect of the present invention, there is provided a light emitting device package module including: a substrate; A first wiring layer formed on the substrate; A first light emitting device that is mounted on the first wiring layer so as to be electrically connected to the first wiring layer and emit light; A second wiring layer formed on the substrate and configured to be controlled independently of the first wiring layer; A second light emitting device that is mounted on the second wiring layer so as to be electrically connected to the second wiring layer and emit light; And a light conversion element contacting the first light emitting element and the second light emitting element to surround at least a part of the first light emitting element and the second light emitting element. A module substrate supporting the light emitting device packages so that the plurality of light emitting device packages can be seated; A first channel line provided on the module substrate and connected to the first wiring layer; And a second channel line provided on the module substrate, the second channel line being independently controllable from the first channel line.

In addition, the light emitting device package module according to the present invention may include a controller capable of applying independent emission control signals to the 1-channel line and the 2-channel line, respectively, so as to control the dimming of the light emitting device package .

According to another aspect of the present invention, there is provided a method of manufacturing a light emitting device package, comprising: preparing an original plate made of an insulating mixed material in which a binder and a heat dissipating powder are mixed; Attaching a wiring layer sheet to an upper surface of the original plate, and attaching a lower surface electrode layer sheet to a lower surface of the original plate; Piercing the through hole from the bottom to the original plate having the wiring layer sheet and the bottom electrode layer sheet attached thereto; Plating a first plating layer to form a penetrating electrode on an inner wall of the through-hole; A second wiring layer and an electrode separation space which can be controlled independently of the first wiring layer and the first wiring layer are formed on the wiring layer sheet and a photosensitive mask film is formed on the wiring layer sheet or the lower electrode layer sheet so that a pattern is formed on the lower surface electrode layer. Etching and etching with an etching solution; Forming a bonding medium on the first wiring layer and the second wiring layer; Placing a first light emitting device on a bonding medium of the first wiring layer and placing a second light emitting device on a bonding medium of the second wiring layer; Installing the photo-conversion material in the first light-emitting device and the second light-emitting device so that the photo-conversion material can be in contact with the first light-emitting device and the second light-emitting device; And cutting the original plate provided with the photo-conversion material into a unit package.

According to some embodiments of the present invention as described above, it is possible to control dimming of all the light emitting device packages simultaneously or dimly by controlling independent dimming for each individual light emitting device packages, thereby preventing shading, It is possible to realize natural lighting and uniformity of light intensity even in a large area, and it is possible to produce a high-quality lighting and produce a high-value-added product. Of course, the scope of the present invention is not limited by these effects.

1 is a conceptual view conceptually showing a light emitting device package and a light emitting device package module according to some embodiments of the present invention.
2 is a plan view illustrating a light emitting device package and a light emitting device package module according to some embodiments of the present invention.
3 is a partially cutaway perspective view showing a top surface of the light emitting device package of FIG.
4 is a perspective view showing a bottom surface of the light emitting device package of Fig.
5 is a plan view showing light emitting elements of the light emitting device package of FIG.
6 is a bottom view showing a first plating layer and a filling layer of the light emitting device package of FIG.
Fig. 7 is a cross-sectional view taken along line VII-VII in Fig. 3. Fig.
FIGS. 8 to 14 are cross-sectional views illustrating steps of manufacturing a light emitting device package according to some embodiments of the present invention.
15 is a flowchart showing a method of manufacturing a light emitting device package according to some embodiments of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified in various other forms, The present invention is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the thickness and size of each layer are exaggerated for convenience and clarity of explanation.

It is to be understood that throughout the specification, when an element such as a film, region or substrate is referred to as being "on", "connected to", "laminated" or "coupled to" another element, It will be appreciated that elements may be directly "on", "connected", "laminated" or "coupled" to another element, or there may be other elements intervening therebetween. On the other hand, when one element is referred to as being "directly on", "directly connected", or "directly coupled" to another element, it is interpreted that there are no other components intervening therebetween do. Like numbers refer to like elements. As used herein, the term "and / or" includes any and all combinations of one or more of the listed items.

Although the terms first, second, etc. are used herein to describe various elements, components, regions, layers and / or portions, these members, components, regions, layers and / It is obvious that no. These terms are only used to distinguish one member, component, region, layer or section from another region, layer or section. Thus, a first member, component, region, layer or section described below may refer to a second member, component, region, layer or section without departing from the teachings of the present invention.

Also, relative terms such as "top" or "above" and "under" or "below" can be used herein to describe the relationship of certain elements to other elements as illustrated in the Figures. Relative terms are intended to include different orientations of the device in addition to those depicted in the Figures. For example, if the element is inverted in the figures, the elements depicted as being on the upper surface of the other elements will have a direction on the lower surface of the other elements. Thus, the example "top" may include both "under" and "top" directions depending on the particular orientation of the figure. If the elements are oriented in different directions (rotated 90 degrees with respect to the other direction), the relative descriptions used herein can be interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a," "an," and "the" include singular forms unless the context clearly dictates otherwise. Also, " comprise "and / or" comprising "when used herein should be interpreted as specifying the presence of stated shapes, numbers, steps, operations, elements, elements, and / And does not preclude the presence or addition of one or more other features, integers, operations, elements, elements, and / or groups.

Hereinafter, embodiments of the present invention will be described with reference to the drawings schematically showing ideal embodiments of the present invention. In the figures, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention should not be construed as limited to the particular shapes of the regions illustrated herein, but should include, for example, changes in shape resulting from manufacturing.

1 is a conceptual diagram conceptually illustrating a light emitting device package 100 and a light emitting device package module 1000 according to some embodiments of the present invention.

First, as shown in FIG. 1, each of the light emitting device packages 100 according to some embodiments of the present invention may include a plurality of (four in FIG. 1) light emitting devices.

These light emitting devices are installed in one light emitting device package 100 and are connected to the first channel line 1, the second channel line 2, the third channel line 3, And can be independently emitted by the fourth channel line (Channel 4).

For example, when electricity is supplied to the first channel line (Channel 1), one light emitting device included in each of the light emitting device packages 100 emits light, thereby achieving a one-stage brightness as a whole, When electricity is supplied also to the 2-channel line (Channel 2), two light emitting elements included in each of the light emitting device packages 100 emit light to realize a two-stage brightness as a whole, and then the third channel line , Three light emitting devices included in each of the light emitting device packages 100 emit light, thereby realizing three-stage brightness as a whole, and then electricity is also supplied to the fourth channel line (Channel 4) , The four light emitting devices included in the respective light emitting device packages 100 are all lighted to realize the four-stage brightness as a whole.

Therefore, each of the light emitting device packages 100 can emit light at the same brightness at the same brightness at the same time, thereby enabling a lighting function having uniform dimming luminance without shading as a whole.

2 is a plan view illustrating a light emitting device package 100 and a light emitting device package module 1000 according to some other embodiments of the present invention. 3 is a partially cutaway perspective view showing a top surface of the light emitting device package 100 of FIG. 2, FIG. 4 is a perspective view showing a bottom surface of the light emitting device package 100 of FIG. 2, 6 is a plan view showing the light emitting elements LED1, LED2, LED3, LED4, LED5, LED6, LED7, and LED8 of the package 100. FIG. 1 plating layer 41 and the filling layer 43, and Fig. 7 is a cross-sectional view taken along line VII-VII in Fig.

2 to 7, a light emitting device package 100 according to some embodiments of the present invention includes a substrate 10, a first wiring layer R1, a first light emitting device LED1 The third wiring layer R3, the third light emitting element LED3, the fourth wiring layer R4 and the fourth light emitting element (second light emitting element LED2), the second wiring layer R2, the second light emitting element LED2, The fourth light emitting device LED4, the fifth light emitting device LED5, the sixth light emitting device LED6, the seventh light emitting device LED7, the eighth light emitting device LED8, and the light conversion material 20 .

The eight light emitting elements LED1, LED2, LED4, LED5, LED6, LED7, and LED8 that are in contact with the light conversion material 20 are exemplified. However, The number of the cells is not necessarily limited to eight, but may be applied in a very wide variety of numbers such as two, three, four, six, eight.

2 and 7, the substrate 10 is made of an insulating mixed material in which the binder 11 and the heat dissipating powder 12 are mixed, and the binder 11, Wherein the heat dissipation powder 12 comprises at least a ceramic powder 12-1, a metal powder 12-2, a metal powder 12-4 coated with an insulator 12-3, And a combination of these may be selected.

The substrate 10 is formed of the light conversion elements 20 and the various components to be described later, as well as the light emitting elements LED1, LED2, LED3, LED4, LED5, LED6, And can be made of a mixed material having appropriate mechanical strength for this purpose.

More specifically, for example, the substrate 10 may be formed of a resin, a glass, a silicone resin composition, a modified epoxy resin composition, a modified silicone resin composition, a polyimide resin composition, a modified polyimide resin composition, (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenol resin, acrylic resin, PBT resin, Epoxy Mold Compound, white silicone, photoimageable solder resist Copper, zinc, tin, lead, gold, or the like, which is excellent in thermal conductivity and is coated with various insulators 12-3 such as an oxide layer, that is, Or a mixture of metal powders such as silver.

Here, the insulator 12-3 coated on the metal powder 12-4 is an insulating material that entirely surrounds the metal powder 12-4. For example, the insulator 12-3 may be formed by oxidizing the metal powder 12-4 . When the metal powder 12-4 includes aluminum in the metal, the insulator 12-3 may include alumina, which is aluminum oxide. Although various methods are available for such an oxidation method, an aluminum component may be oxidized on the surface of the metal powder 12-4 by using an anodizing method to form the insulator 12-3.

That is, the metal powder 12-4 may include an aluminum component, and the insulator 12-3 may be an aluminum oxide layer. In addition, the insulator 12-3 may be formed of silicon oxide, silicon nitride, or the like.

The substrate 10 may be an insulating substrate of a flexible printed material such as a printed circuit board (PCB), which is a mixture of the binder 11 and the heat dissipating powder 12, And may be an insulating substrate of a flexible printed circuit board (FPCB).

The binder 11 of the substrate 10 may be a mixture of thermoplastic, thermosetting or volatile materials that can be partially or wholly cured after being mixed with the heat dissipation powder 12.

Therefore, by using the substrate 10 using the mixed material of the binder 11 and the heat-dissipating powder 12, which is excellent in heat dissipation and relatively tighter than metal, by using the heat-dissipating powder 12, The processes such as trimming, cutting, punching, sheet bonding, pattern formation and molding are similar to the conventional PCB manufacturing process, and the existing PCB equipment can be modified and used very economically and the productivity can be greatly improved.

1 and 7, the first wiring layer R1 is formed on the substrate 10 and is electrically connected to the first light emitting device LED1 and the fifth light emitting device LED5 Which may be copper, aluminum, silver, or the like.

1 and 7, the second wiring layer R2 may be formed on the substrate 10 so as to be independently controllable from the first wiring layer R1, And may be a wiring pattern of a conductive material such as copper, aluminum, or silver, which can be electrically connected to the element LED2 and the sixth light emitting element LED6.

1 and 7, the third wiring layer R3 may be formed on the substrate 10 so as to be independently controllable from the second wiring layer R2, And may be a wiring pattern of a conductive material such as copper, aluminum, silver, or the like, which can be electrically connected to the device LED3 and the seventh light emitting device LED7.

1 and 7, the fourth wiring layer R4 may be formed on the substrate 10 so as to be independently controllable from the third wiring layer R3, And may be a wiring pattern of a conductive material such as copper, aluminum, or silver that can be electrically connected to the device LED4 and the eighth light emitting device LED8.

Here, the first wiring layer R1, the second wiring layer R2, the third wiring layer R3, and the fourth wiring layer R4 are applied in the form of a wiring layer sheet to be described later, which is adhered to an original plate by an adhesive layer .

2 to 7, the first light emitting device LED1 and the fifth light emitting device LED5 may be electrically connected to the first wiring layer R1, 1 < / RTI > wiring layer < RTI ID = 0.0 &

The second light emitting device LED2 and the sixth light emitting device LED6 may be mounted on the second wiring layer R2 so as to be electrically connected to the second wiring layer R2 and emit light.

The third light emitting device LED3 and the seventh light emitting device LED7 may be mounted on the third wiring layer R3 so as to be electrically connected to the third wiring layer R3 and emit light.

The fourth light emitting device LED4 and the eighth light emitting device LED8 may be seated on the fourth wiring layer R4 so as to be electrically connected to the fourth wiring layer R4 and emit light.

The light emitting devices LED1, LED2, LED4, LED5, LED6, LED7, and LED8 are placed above the wiring layers R1, R2, R3, and R4 And may be a horizontal LED (Light Emitting Diode) to which a bonding wire W is applied, as shown in FIG. 2 to FIG. A flip chip type LED or a vertical type LED having a first pad and a second pad.

The light emitting devices may be formed of a semiconductor. For example, LEDs of blue, green, red, and yellow light emission, LEDs of ultraviolet light emission, and LEDs of infrared light emission, which are made of a nitride semiconductor, can be applied.

The light emitting devices are formed by epitaxially growing nitride semiconductors such as InN, AlN, InGaN, AlGaN, and InGaAlN on a sapphire substrate for growth or a silicon carbide substrate by a vapor growth method such as MOCVD . In addition, the light emitting devices can be formed using semiconductors such as ZnO, ZnS, ZnSe, SiC, GaP, GaAlAs, and AlInGaP in addition to the nitride semiconductor. These semiconductors can be stacked in the order of an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer. The light emitting layer (active layer) may be a laminated semiconductor having a multiple quantum well structure or a single quantum well structure or a laminated semiconductor having a double hetero structure. In addition, the light emitting device 20 can be selected to have an arbitrary wavelength depending on the application such as display use and illumination use.

Here, as the growth substrate, an insulating, conductive or semiconductor substrate may be used if necessary. For example, the growth substrate may be sapphire, SiC, Si, MgAl ₂ O ₄ , MgO, LiAlO ₂ , LiGaO ₂ , GaN. A GaN substrate, which is a homogeneous substrate, is preferable for epitaxial growth of a GaN material, but a GaN substrate has a problem of high production cost due to its difficulty in manufacturing.

Sapphire and silicon carbide (SiC) substrates are mainly used as the different substrates. Sapphire substrates are more utilized than expensive silicon carbide substrates. When using a heterogeneous substrate, defects such as dislocation are increased due to the difference in lattice constant between the substrate material and the thin film material. Also, due to the difference in the thermal expansion coefficient between the substrate material and the thin film material, warping occurs at a temperature change, and warping causes a crack in the thin film. This problem may be reduced by using a buffer layer between the substrate and the GaN-based light emitting laminate.

In addition, the substrate for growth may be completely or partially removed or patterned in order to improve the optical or electrical characteristics of the LED chip before or after the growth of the LED structure.

For example, in the case of a sapphire substrate, the substrate can be separated by irradiating the laser to the interface with the semiconductor layer through the substrate, and the silicon or silicon carbide substrate can be removed by a method such as polishing / etching.

Another supporting substrate may be used for removing the growth substrate. In order to improve the light efficiency of the LED chip on the opposite side of the growth substrate, the supporting substrate may be bonded using a reflective metal, As shown in FIG.

In addition, patterning of the growth substrate improves the light extraction efficiency by forming irregularities or slopes before or after the LED structure growth on the main surface (front surface or both sides) or side surfaces of the substrate. The size of the pattern can be selected from the range of 5 nm to 500 μm and it is possible to make a structure for improving the light extraction efficiency with a rule or an irregular pattern. Various shapes such as a shape, a column, a mountain, a hemisphere, and a polygon can be adopted.

In the case of the sapphire substrate, the crystals having a hexagonal-rhombo-cubic (Hexa-Rhombo R3c) symmetry have lattice constants of 13.001 and 4.758 in the c-axis direction and the a-axis direction, respectively, and have C plane, A plane and R plane. In this case, the C-plane is relatively easy to grow the nitride film, and is stable at high temperature, and thus is mainly used as a substrate for nitride growth.

Another material of the growth substrate is a Si substrate, which is more suitable for large-scale curing and relatively low in cost, so that mass productivity can be improved.

In addition, since the silicon (Si) substrate absorbs light generated from the GaN-based semiconductor and the external quantum efficiency of the light emitting device is lowered, the substrate may be removed as necessary, and Si, Ge, SiAl, A support substrate such as a metal substrate is further formed and used.

When a GaN thin film is grown on a different substrate such as the Si substrate, the dislocation density increases due to the lattice constant mismatch between the substrate material and the thin film material, and cracks and warpage Lt; / RTI > The buffer layer may be disposed between the growth substrate and the light emitting stack for the purpose of preventing dislocation and cracking of the light emitting stack. The buffer layer also functions to reduce the scattering of the wavelength of the wafer by adjusting the degree of warping of the substrate during the growth of the active layer.

The buffer layer may be made of GaN, AlN, AlGaN, InGaN, or InGaNAlN. If necessary, a material such as ZrB ₂ , HfB ₂ , ZrN, HfN, or TiN may be used. Further, a plurality of layers may be combined, or the composition may be gradually changed.

2 to 7, the photo-conversion material 20 includes the first light emitting device LED1, the second light emitting device LED2, the third light emitting device LED3, And the third light emitting device LED3 and the fourth light emitting device LED4 to surround at least a part of the fourth light emitting device LED4, and the first light emitting device LED1, the second light emitting device LED2, LED4). More specifically, for example, the photo-conversion material 20 may reflect light generated from the light emitting elements LED1, LED2, LED4, LED5, LED6, LED7, Or a quantum dot that can be converted into the light of the second wavelength.

On the other hand, the phosphor may have the following composition formula and color.

Oxide system: yellow and green Y ₃ Al ₅ O ₁₂ : Ce, Tb ₃ Al ₅ O ₁₂ : Ce, Lu ₃ Al ₅ O ₁₂ : Ce

(Ba, Sr) ₂ SiO ₄ : Eu, yellow and orange (Ba, Sr) ₃ SiO ₅ : Ce

The nitride-based: the green β-SiAlON: Eu, yellow _{L 3 Si 6 O 11: Ce} , orange-colored α-SiAlON: Eu, red _{CaAlSiN 3: Eu, Sr 2 Si} 5 N 8: Eu, SrSiAl 4 N 7: Eu

The composition of the phosphor should basically correspond to stoichiometry, and each element may be substituted with another element in each group on the periodic table. For example, Sr can be substituted with Ba, Ca, Mg, etc. of the alkaline earth (II) group, and Y can be replaced with lanthanum series of Tb, Lu, Sc, Gd and the like. Ce, Tb, Pr, Er, Yb and the like, and the active agent may be used alone or as a negative active agent for the characteristic modification.

In addition, the phosphor may include materials such as a quantum dot. The above-mentioned oxides, nitrides, silicates, and QD materials may be used alone or as a mixture of these phosphors.

QD can be composed of a core (3 to 10 nm) such as CdSe and InP, a shell (0.5 to 2 nm) such as ZnS and ZnSe, and a ligand for stabilizing the core and the shell. Can be implemented.

In addition, the application method of the phosphor may be at least one of a method of being applied to an LED chip or a light emitting device, a method of covering the LED chip, a method of covering the LED chip, a method of attaching a sheet form such as a film or a ceramic phosphor.

Dispensing and spray coating are common methods of spraying, and dispensing includes mechanical methods such as pneumatic method and screw, linear type. It is also possible to control the amount of dyeing through a small amount of jetting by means of a jetting method and control the color coordinates thereof. The method of collectively applying the phosphor on the wafer level or the light emitting device substrate by the spray method can easily control productivity and thickness.

The method of directly covering the light emitting device or the LED chip in a film form can be applied by a method of electrophoresis, screen printing or phosphor molding, and the method can be different according to necessity of application of the side of the LED chip.

In order to control the efficiency of the long-wavelength light-emitting phosphor that reabsers light emitted from a short wavelength among two or more kinds of phosphors having different emission wavelengths, two or more kinds of phosphor layers having different emission wavelengths can be distinguished. A DBR (ODR) layer may be included between each layer to minimize absorption and interference.

In order to form a uniform coating film, the phosphor may be formed into a film or ceramic form and then attached onto the LED chip or the light emitting device.

In order to make a difference in light efficiency and light distribution characteristics, a photoelectric conversion material may be located in a remote format. In this case, the photoelectric conversion material is located together with a transparent polymer, glass, or the like depending on its durability and heat resistance.

Since the phosphor coating technique plays a major role in determining the optical characteristics in the light emitting device, control techniques such as the thickness of the phosphor coating layer and the uniform dispersion of the phosphor have been studied variously. QD can also be placed in the LED chip or the light emitting element in the same manner as the phosphor, and can be positioned between the glass or translucent polymer material for light conversion.

2 to 7, a light emitting device package 100 according to some embodiments of the present invention includes a lower electrode layer 30 formed on a lower surface of the substrate 10, And a through electrode 40 electrically connecting the first wiring layer R1 or the second wiring layer R2 to the lower electrode layer 30. The through electrode 40 may be formed of a conductive material.

More specifically, for example, the lower surface electrode layer 30 may be an electrode layer of a conductive material formed on the lower surface of the substrate 10. Although not shown, the bottom electrode layer 30 may be formed to correspond to a shape of an external power connection terminal or a module substrate so as to be electrically connected to an external power connection terminal or a module substrate.

Here, the wiring layers R1, R2, R3, and R4 and the bottom electrode layer 30 may be formed of copper (Cu), gold (Au), silver (Ag), platinum (Pt) , A solder or the like is adhered to the upper and lower surfaces of the substrate 10, and the sheet is adhered to the substrate 10 at a high temperature and a high pressure using a hot press, that is, .

Therefore, the manufacturing process is very easy, such as using a hot press, which is a PCB device, similar to the conventional PCB manufacturing process, and a comparatively low-cost mixed material is used as the substrate 10 to reduce the package price, .

In addition, the wiring layers R1, R2, R3, and R4 and the bottom electrode layer 30 may be formed by a variety of deposition processes, plating processes such as pulse plating and direct-current plating, soldering processes, Process. &Lt; / RTI >

The penetrating electrode 40 has an inner wall of a through hole H formed in a shape penetrating from the lower surface of the substrate 10 to the lower surface of the first wiring layer R1 or the second wiring layer R2 And a filling layer 43 filled in the inside of the first plating layer 41. The first plating layer 41 may be formed by plating the first plating layer 41,

That is, the through-holes H may be formed to penetrate from the lower surface of the substrate 10 to the lower surfaces of the wiring layers R1, R2, R3, and R4. However, it does not penetrate all the way to the upper surfaces of the wiring layers R1, R2, R3, and R4.

This is because if the wiring layers R1, R2, R3, and R4 are all penetrated to the upper surface, various foreign substances may penetrate through the through hole H in a subsequent process.

In addition, the forming method of the through-holes H may be applied to all types of perforations such as etching, mechanical perforation, and laser perforation.

The plating method described above can be applied to an electroless plating method or an electrolytic plating method only on the inner wall of the through hole H as shown in FIG. 2 to FIG. 7, The upper surface and the lower surface of the substrate may be partially or wholly electrolessly or electrolytically plated.

The method of forming the penetrating electrode 40 is not limited to the plating method. Alternatively, the penetrating electrode 40 may be formed by disposing a material such as a conductive paste or a hole plug such as a copper paste or a solder paste on the side surface of the substrate 10 And can be formed by various printing methods such as an inkjet printing method, a stencil printing method, a squeeze printing method, and the like. .

As described above, the wiring layers R1, R2, R3 and R4, the bottom electrode layer 30 and the penetrating electrode 40 are formed of copper (Cu), gold (Au), silver (Ag ), Platinum (Pt), aluminum (Al), solder, nickel, and the like, and may be formed by various plating methods such as deposition, deposition, pulse plating or direct current plating, soldering, And may be formed using various processes.

2 to 7, the light emitting device package 100 according to some embodiments of the present invention may be fabricated by forming the first wiring layer R1 or the first wiring layer R1, A second plating layer 42 which is simultaneously plated on the upper surface of the second wiring layer R2; a reflective layer 50 of silver formed on the second plating layer 42; (60) provided below the space between the first wiring layer (R1) and the second wiring layer (R2) so as to reinforce the package strength, and between the wiring layers or the lower electrode layer And may further include a solder resist (SR).

Here, the second plating layer 42 may also be electroless plated, and may be more firmly and densely plated on the top surface of the substrate 10, partially or wholly, in an electroless or electrolytic manner.

The reflective layer 50 may be a reflective layer formed on the wiring layers. For example, the reflective layer 50 may be formed of a reflective coating layer of silver (Ag), platinum (Pt), aluminum (Al), nickel, or the like having high reflectivity. Therefore, the physical and electrical characteristics of the package can be improved by using the reflective layer 50, and the light efficiency of the package can be improved.

Therefore, a total of eight light emitting elements (light emitting elements) are formed in each of the four wiring layers R1, R2, R3, and R4 that can be individually controlled in the phosphor, for example, the light conversion material 20 of one light emitting device package 100 (LED2) (LED4) (LED4) (LED5) (LED6) (LED7) (LED8) and the total of four channel lines Ch1, Ch2, Ch3, The dimming control can be performed so that all the light emitting device packages 100 can be brightened or dimmed at the same time, thereby preventing the generation of shading, enabling natural lighting, uniformity of brightness even in a large area, Can be implemented.

FIGS. 8 to 14 are cross-sectional views illustrating steps of manufacturing the light emitting device package 100 according to some embodiments of the present invention.

As shown in FIGS. 1 to 14, the manufacturing process of the light emitting device package 100 according to some embodiments of the present invention will be described step by step. First, as shown in FIG. 8, And a heat dissipation powder 12 are mixed with a lower electrode layer sheet 1 and a wiring layer sheet 2 is attached to the upper surface of the original plate 1, (3) can be attached.

In this case, the binder 11 may be an epoxy-based insulating resin, and the heat-dissipating powder 12 may be a ceramic powder or an insulated metal powder combined with the binder 11, The disk 1 may have a thickness of 50 to 500 micrometers (μm). For example, the size of the disk 1 may be 510 to 610 mm ² to 1020 to 1200 mm ² have.

In addition, generally, a hot press, which is widely used as a PCB manufacturing equipment, is used to heat and bond the wiring layer sheet 2 to the upper surface of the original plate 1 at a high temperature and a high pressure, The lower surface electrode layer sheet 3 can be pressurized at a high temperature and a high pressure so as to be thermally adhered and laminated.

At this time, copper or aluminum sheets of 10 to 100 micrometers (μm) can be applied to the wiring layer sheet 2 and the lower electrode sheet 3, for example.

Next, as shown in FIG. 9, the wiring layer sheet 2 and the lower surface electrode sheet 3 (see FIG. 9) are formed by using general trim equipment, a mold, a drill, a router, an etching equipment, a cutting equipment, a punching equipment, The through hole (H) can be drilled from the bottom of the original plate (1) to which the plate (1) is attached.

The shape of the through-hole H may be a cylindrical groove that penetrates upward from the lower surface of the original plate 1 to the lower surface of the wiring layer sheet 2.

In addition, the shape of the through-hole H may be variously formed, such as a cylindrical groove, a square groove, a polygonal groove, an elliptical groove, a long hole, various geometric grooves, or a hole.

Next, as shown in FIG. 10, the first plating layer 41 may be plated so that the penetrating electrode 40 is formed on the inner wall of the through hole H by electroless plating.

At this time, the second plating layer 42 can be plated on the wiring layer sheet 2 as necessary.

Here, the electroless plating method is also referred to as chemical plating or autocatalytic plating, in which a reducing agent such as formaldehyde or hydrazine in an aqueous solution supplies electrons such that metal ions are reduced to metal molecules, and this reaction can occur at the catalyst surface.

As the plating agent, copper, nickel-phosphorus, nickel-boron alloy, gold, silver, or the like can be used, and the plating layer is dense compared to electroplating and can have a uniform thickness of about 25 탆.

In the electroless plating method, not only a conductor but also a graphite powder or the like may be painted on various objects to be processed such as a plastic or an organic material to partially apply the desired portion.

Further, after the electroless plating, the thickness of the plating layer can be further increased by using electrolytic plating again with electricity.

11, a first wiring layer R1, a second wiring layer R2 which can be controlled independently of the first wiring layer R1, and an electrode separation space are formed in the wiring layer sheet 2 And the photosensitive mask film M may be attached to the wiring layer sheet 2 or the lower electrode layer sheet 3 so that a pattern is formed on the lower surface electrode layer 30. [

Here, as the photosensitive mask film M, a dry film photoresist (DFR) used when a printed circuit board or a TFT-LCD is manufactured can be applied.

When the photosensitive mask film M is attached to the wiring layer sheet 2 and the lower electrode layer sheet 3, the electrode separation space of the wiring layer sheet 2 is exposed to the etching liquid, The through hole H can be sealed from the etchant so that the penetrating groove H formed on the inner wall of the penetrating groove H can be preserved so that the penetrating groove H can be protected from the etchant.

12, the photosensitive mask film M attached to the wiring layer sheet 2 and the bottom electrode sheet 3 may be exposed and then etched with an etching solution.

At this time, a pattern may be formed on the lower electrode layer sheet 3 so that the above-described strength reinforcing layer 60 may be etched so as to be electrically insulated from the lower electrode layer 30.

Next, as shown in FIG. 13, the solder resist SR is filled between the wiring layers and the electrode layers so as to prevent a short circuit between the terminals, and the first light emitting device LED1 is formed in the first wiring layer R1 The second light emitting device LED2 may be mounted on the second wiring layer R2, and the second light emitting device LED2 may be wire-bonded with the bonding wire W.

14, the first light emitting device LED1 and the second light emitting device LED2 may be connected to the first light emitting device LED1 and the second light emitting device LED2, The light conversion material 20 may be provided on the light emitting diode LED2 and the original plate 1 provided with the light conversion material 20 may be cut in a unit package along the cutting line CL.

Since the substrate 10 is made of the binder 11 and the heat-dissipating powder 12, which are relatively easy to cut, the cutting process can be performed by using a general trim device, a mold, a drill, a router, It is very easy to cut by using equipment, cutting equipment, punching equipment, laser drilling equipment and so on.

Therefore, it is possible to form the high heat dissipation package by using the heat dissipation powder 12, and at the same time, by using the mixed material of the binder 11 and the heat dissipation powder 12, which are relatively soft material, The process of punching, sheet bonding, pattern formation, molding, and the like are similar to the conventional PCB manufacturing process, so that it is very easy to use PCB equipment, and the package 10 is used as a relatively low cost material, Can be greatly improved, and the process is very easy, so that the moldability such as multi-flip chip bonding, complicated pattern formation, and additional process can be greatly improved.

2, the light emitting device package module 1000 according to some embodiments of the present invention includes the light emitting device package 100, the module substrate 1100, the first channel line The second channel line C2, the third channel line C3, the fourth channel line C4, and the control unit 1200, as shown in FIG.

Here, the light emitting device package 100 may have the same function and configuration as those of the light emitting device package 100 according to some embodiments of the present invention described above. Therefore, detailed description is omitted.

In addition, the module substrate 1100 may be a substrate for supporting the light emitting device packages 100 so that the plurality of light emitting device packages 100 can be seated.

The first channel line C1 may be a power supply line provided on the module substrate 10 and connected to the first wiring layer R1.

The second channel line C2 may be a power supply line that is provided on the module substrate 10 and can be controlled independently of the first channel line C1.

The third channel line C3 may be a power supply line that is installed on the module substrate 10 and can be controlled independently of the second channel line C2.

The fourth channel line C4 may be a power supply line that is provided on the module substrate 10 and can be controlled independently of the third channel line C3.

2, the controller 1200 controls the first channel line C1, the second channel line C2, and the second channel line C2 so that the dimming control of each of the light emitting device packages 100 can be performed. Direct-type direct ICs capable of applying independent emission control signals to the third channel line C3 and the fourth channel line C4, respectively.

In addition, the number of the channel lines and the form of the control unit may be variously varied.

Although not shown, the present invention may include a lighting device or a display device including at least one of the light emitting device package or the light emitting device package module according to the technical idea of the present invention described above. Here, the components of the illumination device or the display device according to some embodiments of the present invention may have the same configuration and function as those of the above-described light emitting device package of the present invention. Therefore, detailed description is omitted.

15 is a flowchart showing a method of manufacturing a light emitting device package 100 according to some embodiments of the present invention.

15, a method of manufacturing a light emitting device package 100 according to some embodiments of the present invention includes a step of forming a circular plate 1 made of an insulating mixed material obtained by mixing a binder 11 and a heat dissipating powder 12, (S2) of attaching the lower electrode sheet (3) to the lower surface of the original plate (1) by attaching a wiring layer sheet (2) to the upper surface of the original plate (S3) of perforating the through hole (H) through the bottom plate (1) from the bottom with the interlayer sheet (2) and the bottom electrode sheet (3) (S4) plating the first plating layer (41) so that the first wiring layer (R1) and the first wiring layer (R1) can be independently formed on the wiring layer sheet The wiring layer sheet 2 or the lower electrode sheet 3 is formed so as to form a pattern on the lower electrode layer 30, (S5) of attaching a photosensitive mask film (M) to the first wiring layer (R1), and etching the exposed portion of the first wiring layer A step S6 of placing the light emitting device LED2 and wire bonding the light emitting device LED2 to the bonding wire W, (S7) of installing the light conversion material (20) on the first light emitting device (LED1) and the second light emitting device (LED2) so that the light conversion material And cutting (S8) a unit package along the line CL.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

10: substrate
11: Binder
12: Heat-resisting powder
12-1: Ceramic powder
12-2, 12-4: metal powder
12-3: Insulator
R1: first wiring layer
R2: second wiring layer
R3: third wiring layer
R4: fourth wiring layer
LED1: first light emitting element
LED2: second light emitting element
LED3: Third light emitting element
LED4: fourth light emitting element
LED5: fifth light emitting element
LED6: sixth light emitting element
LED7: the seventh light emitting element
LED8: the eighth light emitting element
20: Photoconductive substance
30: lower electrode layer
40: penetrating electrode
41: First plating layer
42: Second plating layer
43: filling layer
H: Through groove
50: Reflective layer
60: strength reinforcing layer
SR: Solder resist
100: Light emitting device package
1000: Light emitting device package module
1100: module substrate
C1: first channel line
C2: second channel line
C3: third channel line
C4: fourth channel line
1200:
1: Disc
2: wiring layer sheet
3: Lower electrode layer sheet
M: Photosensitive mask film
W: Wire

Claims

Board;
A first wiring layer formed on the substrate;
A first light emitting device that is mounted on the first wiring layer so as to be electrically connected to the first wiring layer and emit light;
A second wiring layer formed on the substrate and configured to be controlled independently of the first wiring layer;
A second light emitting device that is mounted on the second wiring layer so as to be electrically connected to the second wiring layer and emit light; And
A light conversion material contacting the first light emitting device and the second light emitting device to surround at least a part of the first light emitting device and the second light emitting device;
Emitting device package.

The method according to claim 1,
A third wiring layer formed on the substrate and configured to be controlled independently of the second wiring layer; And
A third light emitting device that is mounted on the third wiring layer so as to be electrically connected to the third wiring layer and emit light;
Further comprising:
The photo-
The first light emitting element, the second light emitting element, and the third light emitting element so as to surround at least a part of the first light emitting element, the second light emitting element, and the third light emitting element.

3. The method of claim 2,
A fourth wiring layer formed on the substrate and configured to be controlled independently of the third wiring layer; And
A fourth light emitting device that is mounted on the fourth wiring layer so as to be electrically connected to the fourth wiring layer and emit light;
Further comprising:
The photo-
The first light emitting device, the second light emitting device, the third light emitting device, and the third light emitting device so as to surround at least a part of the first light emitting device, the second light emitting device, And the fourth light emitting element.

The method according to claim 1,
A fifth light emitting device that is mounted on the first wiring layer so as to be electrically connected to the first wiring layer and emit light; And
A sixth light emitting device that is mounted on the second wiring layer so as to be electrically connected to the second wiring layer and emit light;
Emitting device package.

The method of claim 3,
A fifth light emitting device that is mounted on the first wiring layer so as to be electrically connected to the first wiring layer and emit light;
A sixth light emitting device that is mounted on the second wiring layer so as to be electrically connected to the second wiring layer and emit light;
A seventh light emitting element mounted on the third wiring layer so as to be electrically connected to the third wiring layer and emit light; And
An eighth light emitting device that is mounted on the fourth wiring layer so as to be electrically connected to the fourth wiring layer and emit light;
Emitting device package.

The method according to claim 1,
Wherein the substrate is an insulating substrate made of an insulating mixed material in which a binder and a heat dissipating powder are mixed,
Wherein the first wiring layer and the second wiring layer are formed on an upper surface of the substrate,
Wherein the photo-conversion material is a phosphor or a quantum dot,
A lower electrode layer formed on a lower surface of the substrate; And
A penetrating electrode formed to penetrate the substrate and electrically connecting the first wiring layer or the second wiring layer to the lower electrode layer;
Emitting device package.

The method according to claim 6,
Wherein the penetrating electrode includes a first plating layer which is plated along an inner wall of a through-hole formed in a shape penetrating from the lower surface of the substrate to the lower surface of the first wiring layer or the second wiring layer.

8. The method of claim 7,
Wherein the binder includes an epoxy-based resin, and the heat-dissipating powder is selected from at least one of a ceramic powder, a metal powder, a metal powder coated with an insulator, and a combination thereof,
And a second plating layer which is simultaneously plated on an upper surface of the first wiring layer or the second wiring layer at the time of plating the first plating layer.

9. The method of claim 8,
A reflective layer formed on the second plating layer; And
A strength reinforcing layer provided on a lower surface of the substrate and provided below the space between the first wiring layer and the second wiring layer to reinforce the package strength;
Emitting device package.

Board;
A first wiring layer formed on the substrate;
A first light emitting device that is mounted on the first wiring layer so as to be electrically connected to the first wiring layer and emit light;
A second wiring layer formed on the substrate and configured to be controlled independently of the first wiring layer;
A second light emitting device that is mounted on the second wiring layer so as to be electrically connected to the second wiring layer and emit light; And
A light conversion material contacting the first light emitting device and the second light emitting device to surround at least a part of the first light emitting device and the second light emitting device;
.

Board; A first wiring layer formed on the substrate; A first light emitting device that is mounted on the first wiring layer so as to be electrically connected to the first wiring layer and emit light; A second wiring layer formed on the substrate and configured to be controlled independently of the first wiring layer; A second light emitting device that is mounted on the second wiring layer so as to be electrically connected to the second wiring layer and emit light; And a light conversion element contacting the first light emitting element and the second light emitting element to surround at least a part of the first light emitting element and the second light emitting element.
A module substrate supporting the light emitting device packages so that the plurality of light emitting device packages can be seated;
A first channel line provided on the module substrate and connected to the first wiring layer; And
A second channel line disposed on the module substrate, the second channel line being controllable independently of the first channel line;
Emitting device package module.

12. The method of claim 11,
A control unit capable of applying independent emission control signals to the one channel line and the second channel line, respectively, so as to control the dimming of the light emitting device package;
Further comprising a light emitting diode package module.

Preparing an original plate made of an insulating mixed material in which a binder and a heat dissipating powder are mixed;
Attaching a wiring layer sheet to an upper surface of the original plate, and attaching a lower surface electrode layer sheet to a lower surface of the original plate;
Piercing the through hole from the bottom to the original plate having the wiring layer sheet and the bottom electrode layer sheet attached thereto;
Plating a first plating layer to form a penetrating electrode on an inner wall of the through-hole;
A second wiring layer and an electrode separation space which can be controlled independently of the first wiring layer and the first wiring layer are formed on the wiring layer sheet and a photosensitive mask film is formed on the wiring layer sheet or the lower electrode layer sheet so that a pattern is formed on the lower surface electrode layer. Etching and etching with an etching solution;
Forming a bonding medium on the first wiring layer and the second wiring layer;
Placing a first light emitting device on a bonding medium of the first wiring layer and placing a second light emitting device on a bonding medium of the second wiring layer;
Installing the photo-conversion material in the first light-emitting device and the second light-emitting device so that the photo-conversion material can be in contact with the first light-emitting device and the second light-emitting device; And
Cutting the original plate provided with the photo-conversion material into a unit package;
Emitting device package.