KR20150124110A - Liquid flow rate control system and apparatus for supplying etching solution having the same - Google Patents

Liquid flow rate control system and apparatus for supplying etching solution having the same Download PDF

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Publication number
KR20150124110A
KR20150124110A KR1020140050474A KR20140050474A KR20150124110A KR 20150124110 A KR20150124110 A KR 20150124110A KR 1020140050474 A KR1020140050474 A KR 1020140050474A KR 20140050474 A KR20140050474 A KR 20140050474A KR 20150124110 A KR20150124110 A KR 20150124110A
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KR
South Korea
Prior art keywords
flow rate
control
valve
control system
control unit
Prior art date
Application number
KR1020140050474A
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Korean (ko)
Inventor
배일진
어용
고재유
Original Assignee
주식회사 에스앤씨
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Application filed by 주식회사 에스앤씨 filed Critical 주식회사 에스앤씨
Priority to KR1020140050474A priority Critical patent/KR20150124110A/en
Publication of KR20150124110A publication Critical patent/KR20150124110A/en

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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00—Control of flow
    • G05D7/06—Control of flow characterised by the use of electric means

Abstract

Disclosed are a flow rate control system in which a flow rate at particular time may be synchronically controlled when a flow rate changed according to time is controlled, and a semiconductor etching solution supplying device having the same. According to one aspect of the present disclosure, the flow rate control system comprises: a valve unit including an opening valve for adjusting the opening selectively; a flowmeter for measuring a flow rate passing through the valve unit; a valve control unit for adjusting the opening of the valve unit by receiving the flow rate measured from the flowmeter, and comparing the flow rate with a control flow rate (Qa) changed as much as a changing flow rate (Qs) determined for a set time interval (Ta); and an upper level control unit for receiving a first set flow rate (Q1), a second set flow rate (Q2) other than the first flow rate, and a time interval (T) changed from the first set flow rate (Q1) to the second set flow rate (Q2), which are inputted from the outside, to be transferred to the valve control unit.

Description

TECHNICAL FIELD [0001] The present invention relates to a flow rate control system and a semiconductor etching liquid supply apparatus having the flow rate control system.

Disclosure of the Invention The present disclosure relates to a flow control system and a semiconductor etchant supply apparatus having the flow control system and, more particularly, to a flow control system capable of synchronously controlling a flow rate at a specific time in controlling a flow rate varying with time, Supply device.

Herein, the background art relating to the present disclosure is provided, and these are not necessarily meant to be known arts.

Generally, in order to manufacture a semiconductor device, it is necessary to perform a process such as a coating or deposition process for forming a film on a wafer, an exposure process for transferring a pattern of a photomask to a photoresist film applied on the wafer, an etching process for removing a film formed on the wafer, Various processes are performed.

In the etching process of the unit processes, the etchant must be uniformly formed on the wafer, and if the etchant is partially excessively or insufficient, a desired etching rate can not be obtained at this portion.

Thus, an etching apparatus is used to uniformly supply the etchant onto the wafer. The etch apparatus is configured to include a support having the wafer mounted thereon and rotating at a constant speed, and a nozzle installed to spray the etchant onto the wafer placed on the support .

When the etchant is injected from the nozzle, the etchant is spread on the surface of the rotating wafer, and the extent to which the etchant spreads on the surface of the wafer due to the centrifugal force due to the rotation of the wafer is controlled.

Since the rotational speed and the centrifugal force at the center and the periphery of the wafer are different at the time of supplying the etchant, it is important to spray the etchant appropriately accordingly.

That is, the degree of spreading of the etchant is determined by suitably determining the centrifugal force, the injection flow rate of the etchant, and the like depending on the peripheral position of the wafer.

However, when the etching liquid is supplied to the rotating wafer as described above, the centrifugal force due to the rotation of the wafer is different between the central portion and the outer periphery, and thus a part of the wafer is over-etched or under-etched.

Therefore, it is required to develop a flow control system capable of accurately controlling the flow rate that varies with time, and a semiconductor etching liquid supply apparatus to which the flow control system is applied.

Particularly, it is required to develop a flow control system capable of minimizing the transmission of commands and data between the control structures, which cause time delay of the control operation, in order to accurately control the flow rate that varies with time.

It is an object of the present disclosure to provide a flow control system capable of synchronously controlling a flow rate at a specific time in controlling a flow rate that varies with time, and a semiconductor etching liquid supply apparatus having the flow control system.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, a valve unit having an opening selectively controlled; A flow meter for measuring a flow rate passing through the valve unit; A valve control unit for controlling an opening degree of the valve unit by comparing the flow rate measured by the flow meter with a control flow rate Qa which is varied by a variable flow rate Qs set for a predetermined time interval Ta; And a second set flow rate Q2 that is different from the first set flow rate Q2 and a time interval T that changes from the first set flow rate Q1 to the second set flow rate Q2, And an upper control unit for receiving the control signal from the valve control unit and transmitting the control signal to the valve control unit.

According to this, if the upper control section initially provides information on the first and second set flow rates Q1 and Q2 and the time interval T, the valve control section uses the variable flow rate Qs set per the set time interval Ta It is possible to minimize the transmission and reception of commands and data between the upper control unit and the valve control unit, thereby preventing the control time delay. As a result, accurate control of the flow rate that varies with time becomes possible.

In one aspect of the present disclosure, the valve control unit determines the control flow rate Qa from the first set flow rate Q1, the second set flow rate Q2, and the time interval T, The control flow rate Qa is changed from the second set flow rate Q2 to the second set flow rate Q2 after the lapse of the time interval T by the fluctuation flow rate Qs set at the set time interval Ta with the flow rate Q1 as the initial value, To be equal to each other.

In one aspect of the present disclosure, the set variable flow rate Qs is calculated by: calculating a flow rate variation amount (Qc = Q2-Q1) and a control flow rate change number (Tc = T / Ta; And calculating the set variable flow rate (Qs) by dividing the flow rate variation amount by the control flow rate variation time (Qc / Tc).

This makes it possible to accurately control the control flow rate Qa to increase or decrease linearly from the first set flow rate Q1 to the second set flow rate Q2 during the time interval T without any time delay.

In one aspect of the present disclosure, the valve control unit synchronously controls the time and the flow rate when the set flow rate increases or decreases with time.

In one aspect of the present disclosure, the flow meter is characterized by being provided with an ultrasonic flow meter.

This makes it possible to eliminate the possibility of the flow rate change by the flowmeter.

In one aspect of the present disclosure, the control fluctuation period Ta is 200 ms.

According to this, it is possible to prevent the control time delay due to an increase in the amount of data to be transmitted / received when the control fluctuation period Ta becomes short, while minimizing the flow error caused by the long control fluctuation period Ta.

According to another aspect of the present disclosure, there is provided a semiconductor etchant supply apparatus having a flow control system, comprising: a cylindrical process chamber having an open top; A spin head positioned within the process chamber and configured to seat and rotate the wafer; A nozzle positioned on an upper surface of the spin head and spraying an etchant while moving from a central portion of the wafer to a peripheral portion; And the flow rate control system controlling the flow rate of the etchant injected from the nozzle in proportion to the time the nozzle moves from the central portion of the wafer toward the peripheral portion.

According to this, when the etching liquid is supplied to the rotating wafer by the nozzle, the centrifugal force due to the rotation of the wafer is different between the center portion and the outer periphery, thereby overcoming the problem of overexcitation or inadequate etching of a part of the wafer.

According to the flow rate control system according to an aspect of the present disclosure, if the upper control section initially provides information on the first and second set flow rates Q1 and Q2 and the time interval T, The control flow rate Qa is changed and controlled by using the set variable flow rate Qs per unit time so that the transmission and reception of commands and data between the upper control unit and the valve control unit can be minimized and the control time delay can be prevented. As a result, it becomes possible to accurately control the flow rate that varies with time without delay.

According to another aspect of the present invention, there is provided a semiconductor etchant supply apparatus having a flow control system, wherein when the etchant is supplied to a rotating wafer by a nozzle, centrifugal force due to rotation of the wafer is different between a center portion and an outer periphery, It is possible to improve the problem of angular or inferior etching.

1 is a conceptual illustration of a flow control system in accordance with an embodiment of the present disclosure;
FIG. 2 is a view showing a result of flow control by the flow control system of FIG. 1;
3 is a schematic view showing an example of a semiconductor etchant supply apparatus having a flow control system according to the present disclosure.

The present disclosure will now be described in detail with reference to the accompanying drawings.

However, the present invention is not limited to these embodiments. For example, the present invention is not limited to the above-described embodiments, and various modifications may be made without departing from the spirit and scope of the present invention. It should be understood that the embodiments described herein are to be understood as the embodiments disclosed herein.

The terms used in this specification and claims are to be understood by the inventor as a concept selected for the convenience of explanation and should not be construed in a linguistic sense in understanding the meaning thereof but should be appropriately interpreted in accordance with the technical idea of the present disclosure will be.

FIG. 1 is a conceptual view of a flow control system according to an embodiment of the present disclosure, and FIG. 2 is a diagram showing a flow control result by the flow control system of FIG.

Referring to FIG. 1, a flow control system 100 according to an embodiment of the present disclosure includes a valve unit 110, a flow meter 120, a valve control unit 130, and an upper control unit 140.

The valve unit 110 is provided with a valve having an opening degree selectively controlled by the valve control unit 130.

The valve unit 110 may be any as long as the opening degree can be adjusted.

The flow meter 120 is for measuring a flow rate Qr passing through the valve unit 110 and measures the flow rate with a specific period and transmits the measured flow rate information to the valve control unit 130.

In the present embodiment, the flow meter 120 is preferably provided as an ultrasonic flow meter. This is because it is possible to exclude the possibility of the flow rate change by the flow meter.

The valve control unit 130 receives the flow rate measured from the flow meter 120 and compares the flow rate with the control flow rate Qa to adjust the opening degree of the valve unit 110. The flow rate of the flow passing through the valve unit 110 Control is made so as to coincide with the control flow rate (Qa) within an error range.

Further, the valve control unit 130 feedback-controls the flow rate passing through the valve unit 110 while changing the control flow rate Qa by the variable flow rate Qs set per the set time interval Ta.

The upper control unit 140 receives various data for the entire system including the flow control system (e.g., the etching system) from the outside (e.g., the system operator) and delivers the data to each control configuration (e.g., the lower control system) The second set flow rate Q2 is set at a first set flow rate Q1 different from the first set flow rate Q1 and a second set flow rate Q2 different from the first set flow rate. To the valve control unit 130. In this case,

In the conventional flow rate control system, the upper control unit provides the valve control unit with information of a constant set flow rate with time. In order to control the varying flow rate with time, information of the set flow rate changed at regular time intervals is supplied to the valve control unit In particular, a development cost for changing the system program of the upper control unit is required. In particular, repeated commands and data transmission / reception between the upper control unit and the valve control unit cause a delay in the control time.

According to an embodiment of the present disclosure, it is sufficient for the upper control section to initially provide information on the first and second set flow rates Q1 and Q2 and the time interval T. When the valve control section is set at the set time interval Ta, The control flow rate Qa is changed and controlled by using the set variable flow rate Qs per unit time so that the transmission and reception of commands and data between the upper control unit and the valve control unit can be minimized and the control time delay can be prevented. As a result, accurate control of the flow rate that varies with time becomes possible.

As a result, in this embodiment, the valve control unit 130 calculates the control flow rate (Q1) from the first set flow rate Q1, the second set flow rate Q2, and the time interval T received from the upper control unit 140 The control flow rate Qa after the elapse of the time interval T is changed to the second set flow rate Qa after the elapse of the time interval T by the variable flow rate Qs set at the set time interval Ta with the first set flow rate Q1 as the initial value, Q2).

Specifically, the set variable flow rate Qs is set to "

1) calculating the flow rate variation amount (Qc = Q2-Q1) and the control flow rate variation time (Tc = T / Ta; Ta is the control variation period)

2) The step of calculating the fluctuation flow rate Qs set by (Qc / Tc) by dividing the flow rate variation amount Qc by the control flow rate variation time Tc is calculated.

Here, it is preferable that the control fluctuation period Ta is 200 ms.

According to this, it is possible to prevent the control time delay due to an increase in the amount of data to be transmitted / received when the control fluctuation period Ta becomes short, while minimizing the flow error caused by the long control fluctuation period Ta.

Since the flow rate variation Qc can have a value (when the flow rate increases with time) or a negative value (when the flow rate decreases with time), the flow rate control by the valve control unit 130 can be time- It is possible to precisely control the control flow rate to be linearly increased or decreased without delay.

Referring to FIG. 2, it is confirmed that the flow rate variation is linearly reduced from 800 mL / min, which is the first set flow rate Q1, to 500 mL / min, which is the second set flow rate Q2, for the time interval T .

3 is a schematic view showing an example of a semiconductor etchant supply apparatus having a flow control system according to the present disclosure.

Referring to FIG. 3, the semiconductor etchant supply apparatus 200 according to the present embodiment includes a cylindrical process chamber 210, a process chamber 210, A nozzle 230 which is located on the upper surface of the spin head 220 and which is installed and which ejects the etchant while moving from the central portion of the wafer W to the peripheral portion, a flow rate of the etchant sprayed from the nozzle 230 And a flow control system 100 that controls the flow rate of the gas in proportion to the time the nozzle 230 moves from the central portion of the wafer W toward the peripheral portion.

The flow control system 100 includes the valve unit 110, the flow meter 120, the valve control unit 130, and the upper control unit 140 described above.

According to this, when the etching liquid is supplied to the rotating wafer by the nozzle, the centrifugal force due to the rotation of the wafer is different between the center portion and the outer periphery, thereby overcoming the problem of overexcitation or inadequate etching of a part of the wafer.

The time during which the nozzle 230 moves from the central portion to the peripheral portion of the wafer W must be equal to the time interval T between the first set flow rate Q1 and the second set flow rate Q2 However, it is not required that the moving speed of the nozzle 230 be maintained at a constant speed. That is, by controlling the moving speed of the nozzle 230, it becomes possible to control the flow rate that varies non-linearly from the first set flow rate Q1 to the second set flow rate Q2 substantially during the time interval T. [

Claims (7)

A valve unit having an opening degree selectively controlled;
A flow meter for measuring a flow rate passing through the valve unit;
A valve control unit for controlling an opening degree of the valve unit by comparing the flow rate measured by the flow meter with a control flow rate Qa which is varied by a variable flow rate Qs set for a predetermined time interval Ta; And
A second set flow rate Q2 different from the first set flow rate Q2 and a time interval T that changes from the first set flow rate Q1 to the second set flow rate Q2, And an upper control unit for receiving the control signal and transmitting the control signal to the valve control unit. The method according to claim 1,
The valve control unit sets the control flow rate Qa to the initial set flow rate Q1 from the first set flow rate Q1, the second set flow rate Q2 and the time interval T And the control flow rate Qa is controlled to be equal to the second set flow rate Q2 after the elapse of the time interval T by the variable flow rate Qs set for each set time interval Ta Flow control system. The method according to claim 1 or 2,
The set variable flow rate (Qs)
Calculating a flow rate variation amount (Qc = Q2-Q1) and a control flow rate variation number (Tc = T / Ta; Ta is a control variation period); And
(Qc / Tc) and calculating the set variable flow rate (Qs) by dividing the flow rate variation amount by the control flow rate change number. The method according to claim 1,
Wherein the valve control unit synchronously controls the time and the flow rate when the set flow rate increases or decreases with time. The method according to claim 1,
Wherein the flow meter is an ultrasonic flow meter. The method according to claim 1,
Wherein the control fluctuation period (Ta) is 200 ms. A semiconductor etching liquid supply apparatus having a flow control system according to claim 1,
A cylindrical process chamber having an open top;
A spin head positioned within the process chamber and configured to seat and rotate the wafer;
A nozzle positioned on an upper surface of the spin head and spraying an etchant while moving from a central portion of the wafer to a peripheral portion; And
And a flow rate control system including a flow rate control system including a flow rate control system that controls a flow rate of an etchant injected from the nozzle in proportion to a time during which a nozzle moves from a central portion of the wafer toward a peripheral portion thereof.
KR1020140050474A 2014-04-28 2014-04-28 Liquid flow rate control system and apparatus for supplying etching solution having the same KR20150124110A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190068815A (en) 2017-12-11 2019-06-19 임용일 An Integrated Mass Flow Controller Optimizing System for the Enhancement of Controlling Mass Flow Rate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190068815A (en) 2017-12-11 2019-06-19 임용일 An Integrated Mass Flow Controller Optimizing System for the Enhancement of Controlling Mass Flow Rate

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