KR20150118026A - heating apparatus for substrate - Google Patents
heating apparatus for substrate Download PDFInfo
- Publication number
- KR20150118026A KR20150118026A KR1020150041659A KR20150041659A KR20150118026A KR 20150118026 A KR20150118026 A KR 20150118026A KR 1020150041659 A KR1020150041659 A KR 1020150041659A KR 20150041659 A KR20150041659 A KR 20150041659A KR 20150118026 A KR20150118026 A KR 20150118026A
- Authority
- KR
- South Korea
- Prior art keywords
- hot plate
- slider
- guide channel
- heating apparatus
- thermal expansion
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
Abstract
An apparatus for heating a substrate will be described. Substrate heating apparatus: a hot plate; A table for supporting a hot plate; And a plurality of supporters mounted on the periphery of the center of the hot plate to guide radial thermal expansion of the hot plate by supporting the hot plate on the table.
Description
BACKGROUND OF THE
In a conventional substrate heating apparatus, the hot plate includes a plate-shaped heat source and upper and lower plates. The plate member is made of metal such as aluminum, and the upper and lower plates are joined together by a bolt or the like with a heat source interposed therebetween. The hot plate is fixed with respect to the fixed table, and a wafer lifting finger is located at the center thereof, and is fixed by the fixing structure at its periphery.
In this way, in the heating apparatus, if the hot plate is heated to a high temperature by an internal heat source in a state where the edge is fixed to the fixing table, thermal expansion occurs. At this time, since the edge of the hot plate is fixed firmly by the fixing structure, the thermal expansion occurs not in the plane direction with respect to the heating surface of the hot plate but in the vertical direction perpendicular thereto, and at this time, Deformation occurs. According to this, the upper surface of the hot plate, especially the heating surface, rises most at the central portion, and the heating surface is distorted in the form of a Gaussian curve.
As a result, during the wafer process, the wafer in a high temperature state lying on the distorted heating surface (upper surface) of the hot plate is distorted and deformed, and is thus defective. If the wafer is placed on a distorted hot plate, the temperature imbalance is intensified and causes a process failure. Even in this case, it was not possible to find out the cause, and therefore it was impossible to prepare an alternative.
The present invention provides a substrate heating apparatus capable of effectively suppressing distortion of a heating surface due to thermal expansion of a hot plate.
A substrate heating apparatus according to the present invention comprises:
A hot plate;
A table for supporting a hot plate;
And a plurality of supporters mounted on the periphery of the center of the hot plate for guiding or allowing thermal expansion of the hot plate by supporting the hot plate on the table.
According to one embodiment of the invention, the radial thermal expansion by the supports is in the radial direction passing through the center of the hot plate.
According to an embodiment of the present invention, at least three support portions are provided, one end of which is fixed to a hot plate, and the other end of which is movably coupled along a guide channel formed on the table.
According to an embodiment of the present invention, a slider is provided at a lower end portion of each support portion, and the slider is coupled to the guide channel so as to reciprocate in one direction.
According to an embodiment of the present invention, the support portions are disposed at regular angular intervals around the bottom surface of the hot plate, and the support portions guide or guide the thermal expansion and contraction of the hot plate in a radial direction passing through the center of the hot plate. Allow.
According to an embodiment of the present invention, at least three support portions are provided, one end of which is fixed to a hot plate, and the other end of which is movably coupled along a guide channel formed on the table. A slider is movably coupled to the guide channel at the other end of the support.
The hot plate can freely thermally expand and contract in the radial plane direction. Therefore, as in the conventional structure in which the edge is completely fixed to the table, the prevention of the thermal expansion in the planar direction and thus the curvature of the heating surface are fundamentally prevented. Therefore, during the wafer process, the wafer is prevented from being defective due to the abnormal heating surface distortion of the hot plate.
1 is a schematic perspective view of a substrate heating apparatus according to an embodiment of the present invention.
2 is a side view of the substrate heating apparatus shown in Fig.
3 is a plan view of the substrate heating apparatus shown in Fig.
4 is an enlarged view of a portion A in Fig.
5 is an enlarged view of a portion B in Fig.
FIG. 6 shows the entire structure of the support portion applied to the substrate heating apparatus according to the embodiment of the present invention, and the state of connection between the upper and lower hot plates and the table.
FIG. 7 is an exploded perspective view showing the arrangement structure of a supporting portion with respect to a table in a substrate heating apparatus according to an embodiment of the present invention. FIG.
8 is a side view of the guide channel portion viewed from the direction C in Fig.
Hereinafter, a substrate heating apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.
Fig. 1 is a schematic perspective view of a
Referring first to FIGS. 1 and 2, a substrate heating apparatus according to the present invention includes a table 30 and a
The
As shown in FIGS. 1 to 3, the
The
2, while the
One end of the
One end (upper end in the drawing) of the
Fig. 4 and Fig. 5 are enlarged views of part A and part B in Fig.
4 and 5, a
The
6 shows the overall structure of the
A
The
7 is an exploded perspective view showing the arrangement structure of the
As shown in FIG. 7, three
In the above substrate heating apparatus of the present invention, the hot plate supporter moves in the plane direction of the hot plate when the hot plate expands thermally. At this time, the guide channel of the table allows the support to move. As described above, since the movement direction is the limited movement in which the movement direction is the center of the hot plate (10d in Fig. 1 and Fig. 2) and can not move in the radially outward direction toward the center, There is no deviation of the supporting portion with respect to the table except for movement or movement. As such, the plane support member is moved in the radial direction in compliance with the expansion of the hot plate, so that the plane distortion of the hot plate is prevented.
In the embodiment described above, the structure of the slider fitted in the guide channel of the table (base plate) can be modified in various forms. That is, in the substrate heating apparatus of the present invention, the technical scope of the structure for supporting the movement of the support portion with respect to the table or the base plate, that is, the specific structure such as the slider and the roller is not limited.
According to a preferred embodiment of the present invention, three supports and corresponding three summary guide channels are applied, so that the hot plate is supported in a three-point support structure by three supports. As described above, the three supports are allowed to move by the slider and the guide channel of the table that supports the slider so as to move in the direction toward the center of the hot plate, that is, in the radial direction.
Such a structure may be slidable individually because the slider is slidably coupled to the guide channel. However, since the three support portions are connected together by the hot plate, a rigid structure that does not generate relative movement between the hot plate and the table due to thermal expansion Bond structure.
In the conventional substrate heating apparatus, since the entire support structure of the hot plate is a completely fixed structure, the thermal expansion of the hot plate in the planar direction is suppressed, thereby distorting the plane of the hot plate and deforming the wafer. However, as described above, the present invention prevents the plane distortion of the hot plate, thereby preventing the wafer located on the hot plate from becoming defective.
While this invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Therefore, the true scope of protection of the present invention should be defined only by the appended claims.
Claims (7)
A table for supporting the hot plate;
And the hot plate is supported on the table,
And a plurality of supports installed at the periphery of the center of the hot plate to guide radial thermal expansion of the hot plate.
Wherein the radial thermal expansion by the supports is in a radial direction passing through the center of the hot plate.
Wherein at least three support portions are provided and one end thereof is fixed to a hot plate and the other end thereof is movably coupled along a guide channel formed on the table.
Wherein a slider is provided at a lower end of each of the support portions, and the guide channel of the table is coupled to allow the slider to reciprocate in one direction.
Wherein the support portions are disposed on the bottom surface of the hot plate at predetermined angular intervals,
Wherein the support portion guides thermal expansion and contraction of the hot plate in a radial direction passing through the center of the hot plate.
Wherein at least three support portions are provided and one end thereof is fixed to a hot plate and the other end thereof is movably coupled along a guide channel formed on the table.
And a slider is movably coupled to the guide channel at the other end of the support portion.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/KR2015/003132 WO2015156530A1 (en) | 2014-04-11 | 2015-03-31 | Substrate heating device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020140043689 | 2014-04-11 | ||
KR20140043689 | 2014-04-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20150118026A true KR20150118026A (en) | 2015-10-21 |
Family
ID=54400319
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020150041659A KR20150118026A (en) | 2014-04-11 | 2015-03-25 | heating apparatus for substrate |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20150118026A (en) |
-
2015
- 2015-03-25 KR KR1020150041659A patent/KR20150118026A/en not_active Application Discontinuation
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |