KR20150094939A - The structure of heat path for thermal dissipation - Google Patents

The structure of heat path for thermal dissipation Download PDF

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Publication number
KR20150094939A
KR20150094939A KR1020140015865A KR20140015865A KR20150094939A KR 20150094939 A KR20150094939 A KR 20150094939A KR 1020140015865 A KR1020140015865 A KR 1020140015865A KR 20140015865 A KR20140015865 A KR 20140015865A KR 20150094939 A KR20150094939 A KR 20150094939A
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KR
South Korea
Prior art keywords
heat
semiconductor
thermal dissipation
heat path
heat pipe
Prior art date
Application number
KR1020140015865A
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Korean (ko)
Inventor
이재훈
Original Assignee
유정시스템(주)
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Publication date
Application filed by 유정시스템(주) filed Critical 유정시스템(주)
Priority to KR1020140015865A priority Critical patent/KR20150094939A/en
Publication of KR20150094939A publication Critical patent/KR20150094939A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The present invention discloses a method of effectively dispersing heat generated in a semiconductor IC by designing a pattern and size of a heat conduction path. According to the present invention, a heat conduction path between a heat source of a semiconductor IC and a heat- By effectively dispersing heat using a heat pipe filled with a high-temperature material, the heat problem affecting the life of the product can be improved.

Figure pat00001

Description

      BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat path structure for effective heat dissipation,

The present invention relates to a method for effectively dissipating heat generated in a semiconductor IC arising from a high-integration issue as a heat-related issue.

1. Heat exhaust technology through heat conduit

2. Thermal Barrel Fabrication Technology (Semiconductor Etching Technology)

3. Thermally conductive material filling technology

As semiconductor ICs become increasingly more sophisticated and highly integrated, heat problems affecting product life have become a big issue, so effective heat dissipation is needed. In order to achieve effective heat dissipation in highly integrated IC chips, an optimized thermal path design is required.

1. Design of heat conduction pattern with maximum heat dissipation effect with minimum area

2. A heat path structure that forms a conductor pattern in a horizontal direction by filling the material with a high thermal conductivity material, and distributing the heat directly to a low temperature region. On the back side of the active chip.

The active device's heat source and heat emitter are connected by the longest straight line distance, and have the minimum heat dissipation effect.

In Drawings 1, 2, and 3, yellow indicates a heat pipe pattern, gray indicates a substrate, and red indicates a heat source.
In Figure 1, the maximum distance between the heat source and the heat emitter is designed to maximize the heat dissipation effect.
Figures 2 and 3 show various design patterns of heat conduction

It is formed directly on the back side of the chip surface where the active device is formed and connects the heat source and the heat radiator to the longest straight line distance to design a heat conduction pattern having the minimum heat dissipation effect with minimum area.

Since heat conduction helps the heat transfer in the horizontal direction, the heat dissipation is more effective as the distance between the heat source and the heat emitter is longer, because the temperature difference between the two points where the heat flows is required for heat transfer.

The materials that form the thermal path can be metals or carbon-based materials with thermal conductivity, etc. The most common and compatible copper in semiconductor processes can be an example.

As for the method of manufacturing the heat conduction path, first, it forms a bone in the form of a heat conduction path, and wet etching or dry etching method can be used depending on the size of the heat conduction path, and dry etching is more advantageous in forming a fine pattern. There are methods such as plating, CVD and sputtering to fill the bone with thermally conductive material. The method can be different depending on the thermally conductive material. The higher the fill factor, the better.

1 ... Substrate
2 ... heat pipe
3 ... heat source

Claims (3)

An active device is formed directly on the back side of the formed chip surface to connect the heat source and the heat radiator with the longest straight line distance to form a heat conduction pattern having the minimum heat dissipation effect
A heat pipe as claimed in claim 1, wherein the heat pipe is made of a material having a high thermal conductivity,
The light emitting device according to claim 1, wherein the heat pipe

KR1020140015865A 2014-02-12 2014-02-12 The structure of heat path for thermal dissipation KR20150094939A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020140015865A KR20150094939A (en) 2014-02-12 2014-02-12 The structure of heat path for thermal dissipation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020140015865A KR20150094939A (en) 2014-02-12 2014-02-12 The structure of heat path for thermal dissipation

Publications (1)

Publication Number Publication Date
KR20150094939A true KR20150094939A (en) 2015-08-20

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140015865A KR20150094939A (en) 2014-02-12 2014-02-12 The structure of heat path for thermal dissipation

Country Status (1)

Country Link
KR (1) KR20150094939A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220344233A1 (en) * 2021-04-22 2022-10-27 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked semiconductor device including a cooling structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220344233A1 (en) * 2021-04-22 2022-10-27 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked semiconductor device including a cooling structure
US11984376B2 (en) * 2021-04-22 2024-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked semiconductor device including a cooling structure

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E902 Notification of reason for refusal
E601 Decision to refuse application